Flexible sensor
By using semiconductor materials to form a composite insulating layer and a gradient piezoresistive layer in the flexible sensor, the problem of traditional insulating layer opening design is solved, improving the sensor's sensitivity, mechanical strength and stability, and extending its service life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GUANGZHOU LIUQUAN BRAND MANAGEMENT SERVICE CO LTD
- Filing Date
- 2025-06-27
- Publication Date
- 2026-05-08
AI Technical Summary
The existing flexible sensor's insulation layer opening design has problems such as difficulty in precision control, reduced mechanical strength, poor sealing performance, and susceptibility to impurities, which affect the sensor's service life, stability, and reliability.
A composite insulating layer is formed using semiconductor materials, and a gradient piezoresistive layer is designed. It is filled in sections by graphene/polymer piezoresistive composite material, replacing the traditional open-cell insulating layer. The gradient piezoresistive layer is composed of graphene/polymer piezoresistive composite material, single-crystal silicon composite material, piezoresistive silicon-based material, conductive textiles, and conductive foam material. It is divided into a dense surface region, an intermediate transition region, and a bottom support region, which are filled with materials with different porosities and particle sizes.
It improves the sensor's sensitivity and measurement accuracy, enhances mechanical strength, improves sealing, extends service life, increases stability and reliability, and reduces the risk of impurity intrusion.
Smart Images
Figure CN224216198U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of flexible electronic device technology, specifically a flexible sensor. Background Technology
[0002] In recent years, flexible electronics technology has developed rapidly. With the rise of the Internet of Things and wearable technology, flexible electronic devices have become the mainstream trend in the future development of electronic devices. In the field of flexible electronic devices, flexible sensors are often used to sense changes in the external environment and convert them into electrical signals. They are widely used in technologies such as environmental monitoring, health detection, intelligent interaction, and industrial automation.
[0003] Common flexible sensors typically consist of an upper electrode, a lower electrode, and an insulating layer. The insulating layer is usually made of an elastic material, and holes are made at the locations corresponding to the upper and lower electrodes, utilizing the elasticity of the material. When external pressure is applied to the flexible sensor, the upper electrode is forced to compress the insulating layer, causing it to deform and compressing the space where the holes were originally. As the pressure increases, the distance between the upper and lower electrodes gradually decreases. When the pressure reaches a certain level, the upper and lower electrodes come into contact, making the previously insulated circuit conductive, forming a current, and thus generating an electrical signal. When the external pressure decreases or disappears, the insulating layer returns to its original shape due to its elasticity. The elastic force lifts the upper electrode, separating it from the lower electrode, breaking the circuit, and the electrical signal disappears.
[0004] However, this design of openings in the insulation layer has many drawbacks. In terms of hole size, precision control is difficult; holes that are too large can cause false triggering, while holes that are too small are insensitive. Furthermore, openings reduce the mechanical strength of the insulation layer, worsen its sealing performance, and make it more susceptible to impurities, affecting the sensor's lifespan, stability, and reliability.
[0005] Semiconductor materials are a special class of materials whose properties lie between those of conductors and insulators. Their unique electrical properties make them crucial in the field of modern electronics. Under normal conditions, some semiconductor materials exhibit the characteristics of insulators and cannot conduct current; however, when subjected to pressure, their internal microstructure changes, their resistivity decreases sharply, and they acquire conductivity, exhibiting the properties of conductors.
[0006] Given the numerous drawbacks of existing flexible sensor insulation layer opening designs, and the superior performance of semiconductor materials, modifying flexible sensors with semiconductors could potentially change the existing insulation layer structure, improve performance, reduce costs, and meet the development needs of flexible electronics. Utility Model Content
[0007] To overcome the problems existing in related technologies, this utility model provides a flexible sensor that uses a composite insulating layer formed by semiconductor materials to replace the traditional open-hole insulating layer, optimizes the structural design, and improves the performance and reliability of the flexible sensor.
[0008] The technical solution adopted in this utility model is: a flexible sensor, comprising...
[0009] Flexible panel layer;
[0010] A first flexible conductive layer is disposed on the lower surface of the flexible panel layer, and a flexible substrate layer.
[0011] A second flexible conductive layer is disposed on the upper surface of the flexible substrate layer, and the first flexible conductive layer and the second flexible conductive layer are opposite to each other; and
[0012] A gradient piezoresistive layer is located between the first flexible conductive layer and the second flexible conductive layer. One surface of the gradient piezoresistive layer is attached to the first flexible conductive layer, and the other surface is attached to the second flexible conductive layer. The gradient piezoresistive layer is composed of a semiconductor material.
[0013] The first flexible conductive layer is provided with a first contact potential, and the second flexible conductive layer is provided with a second contact potential. The first contact potential and the second contact potential are used to connect with external components.
[0014] Furthermore, the gradient piezoresistive layer is composed of at least one of graphene / polymer piezoresistive composite material, single-crystal silicon composite material, piezoresistive silicon-based material, conductive textile, and conductive foam material.
[0015] Furthermore, the gradient piezoresistive layer is composed of graphene / polymer piezoresistive composite material, and the gradient piezoresistive layer is divided into several piezoresistive partitions along a specific direction. The several piezoresistive partitions are respectively filled with graphene / polymer piezoresistive composite materials with different porosities and particle sizes.
[0016] Furthermore, the gradient piezoresistive layer is divided into three piezoresistive zones along the direction from the first flexible conductive layer to the second flexible conductive layer, namely a surface dense zone, an intermediate transition zone, and a bottom support zone. The three piezoresistive zones are sequentially filled with graphene / polymer piezoresistive composite materials with increasing porosity and particle size.
[0017] Furthermore, the bottom support area is a biomimetic honeycomb air cavity structure, which includes honeycomb walls, honeycomb beams, and honeycomb cavities defined by the honeycomb walls and honeycomb beams.
[0018] Furthermore, the first flexible conductive layer includes a first silicone soft layer, on the side of the first silicone soft layer facing the gradient piezoresistive layer a first conductive film is formed, and the first conductive film has hemispherical protrusions uniformly distributed on it.
[0019] Furthermore, the second flexible conductive layer includes a second silicone soft layer, on the side of the second silicone soft layer facing the gradient piezoresistive layer a second conductive film is formed, and the second conductive film is provided with a hemispherical concave array adapted to the hemispherical protruding pressure guiding portion.
[0020] Furthermore, the flexible substrate layer is provided with a thermoplastic polyurethane (TPU) substrate layer, an Ecoflex impact absorption layer and an Al2O3 encapsulation layer in sequence in the direction away from the second flexible conductive layer, and one surface of the thermoplastic polyurethane (TPU) substrate layer is attached to the second flexible conductive layer.
[0021] Furthermore, the flexible panel layer is a thick transparent PET film, and pressing areas are distributed on the upper surface of the flexible panel layer.
[0022] The flexible sensor of this utility model has the following technical effects: (1) The gradient piezoresistive layer of this flexible sensor is divided into multiple piezoresistive partitions along a specific direction, and each partition is filled with graphene / polymer piezoresistive composite materials with different properties. Compared with the traditional single structure, this unique gradient structure design can respond more accurately to different degrees of external force. When pressed by external force, the composite materials in different partitions work together through their respective piezoresistive characteristics to make the circuit conduction control more precise, effectively solving the problem of false conduction or insensitivity caused by the difficulty in controlling the size of the insulating layer hole of the existing flexible sensor, significantly optimizing the piezoresistive performance and overall sensitivity of the flexible sensor's insulating layer, and better adapting to the diverse application scenarios of flexible electronic devices.
[0023] (2) Because openings in the insulating layer of existing flexible sensors reduce the mechanical strength of the insulating layer and worsen the sealing performance, affecting the service life, stability, and reliability of the flexible sensor. The gradient piezoresistive layer used in this flexible sensor is composed of graphene / polymer piezoresistive composite material. This material itself has good flexibility and does not require openings, maintaining the integrity of the gradient piezoresistive layer, thereby effectively improving the mechanical strength of the insulating layer (i.e., the gradient piezoresistive layer) and making it less prone to damage. Furthermore, the design without openings also avoids the problem of poor sealing performance, reduces the risk of impurities entering, and thus improves the service life, stability, and reliability of the flexible sensor.
[0024] Other features and advantages disclosed in this utility model will be described in detail in the following detailed description section. Attached Figure Description
[0025] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings:
[0026] Figure 1This is a schematic diagram of the overall structure of a flexible sensor after disassembly, according to an exemplary embodiment.
[0027] Figure 2 This is a schematic diagram of the overall structure of a flexible sensor according to an exemplary embodiment.
[0028] Figure 3 This is a schematic diagram of the bottom support region structure of a gradient piezoresistive layer of a flexible sensor according to an exemplary embodiment.
[0029] Reference numerals: 10, Flexible sensor; 20, Flexible panel layer; 21, Pressing area; 30, First flexible conductive layer; 31, First contact potential; 32, First silicone soft layer; 33, Hemispherical protruding pressure-conducting part; 40, Gradient piezoresistive layer; 41, Surface dense area; 42, Intermediate transition area; 43, Bottom support area; 431, Bionic honeycomb air cavity structure; 432, Honeycomb wall; 433, Honeycomb beam; 434, Honeycomb cavity; 50, Second flexible conductive layer; 51, Second contact potential; 52, Second silicone soft layer; 53, Hemispherical concave array; 60, Flexible substrate layer; 61, Thermoplastic polyurethane (TPU) substrate layer; 62, Ecoflex impact absorption layer; 63, Al2O3 encapsulation layer. Detailed Implementation
[0030] The specific embodiments disclosed herein will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the scope of this disclosure.
[0031] like Figure 1 , Figure 2 The diagram illustrates a disclosed exemplary embodiment of the present invention. The flexible sensor 10 of the present invention includes a flexible panel layer 20, a first flexible conductive layer 30, a flexible substrate layer 60, a second flexible conductive layer 50, and a gradient piezoresistive layer 40. The first flexible conductive layer 30 is disposed on the lower surface of the flexible panel layer 20, and the second flexible conductive layer 50 is disposed on the upper surface of the flexible substrate layer 60, with the first flexible conductive layer 30 and the second flexible conductive layer 50 facing each other. The gradient piezoresistive layer 40 is located between the first flexible conductive layer 30 and the second flexible conductive layer 50, with one surface of the gradient piezoresistive layer 40 in contact with the first flexible conductive layer 30 and the other surface in contact with the second flexible conductive layer 50. The gradient piezoresistive layer 40 is composed of a semiconductor material. The first flexible conductive layer 30 is provided with a first contact potential 31, and the second flexible conductive layer 50 is provided with a second contact potential 51. The first contact potential 31 and the second contact potential 51 are used for connection with external components.
[0032] The gradient piezoresistive layer 40 of the flexible sensor 10 of this invention is composed of semiconductor material and is located between two conductive layers. Semiconductor materials have unique electrical properties; when subjected to external force, their internal electron migration characteristics change, thereby causing a change in resistance. This characteristic enables the sensor to convert external physical quantities such as pressure and strain into electrical signals, achieving accurate sensing of external physical quantities. Simultaneously, the gradient structure design allows the sensor to respond to different levels of external force with varying resistance changes, further improving the sensor's sensitivity and measurement accuracy.
[0033] For example, in an exemplary embodiment disclosed in this utility model, the gradient piezoresistive layer 40 of the flexible sensor 10 of this utility model is composed of at least one of graphene / polymer piezoresistive composite material, single crystal silicon composite material, piezoresistive silicon-based material, conductive textile, and conductive foam material.
[0034] In related research and applications, graphene / polymer piezoresistive composite materials have been widely used in various sensing fields due to their good flexibility and piezoresistive properties; single-crystal silicon composite materials have mature applications in semiconductor sensors due to their stable physicochemical properties and electrical properties; piezoresistive silicon-based materials, as classic piezoresistive sensing materials, play an important role in pressure, strain and other sensing measurements; conductive textiles and conductive foam materials have also been widely used in wearable devices, electronic shielding and other fields due to their unique conductivity and structural characteristics.
[0035] This invention applies these existing materials to the gradient piezoresistive layer 40 of the flexible sensor 10, and in conjunction with other components, improves the performance of the flexible sensor 10 in terms of sensitivity, stability, and adaptability. In this application, the use of these materials aims to leverage their known properties to construct a novel flexible sensor 10 structural system.
[0036] Specifically, in the exemplary embodiments disclosed in this utility model, the gradient piezoresistive layer 40 of the flexible sensor 10 of this utility model is composed of graphene / polymer piezoresistive composite material. The gradient piezoresistive layer 40 is divided into several piezoresistive partitions along a specific direction, and the several piezoresistive partitions are respectively filled with graphene / polymer piezoresistive composite materials with different porosities and particle sizes.
[0037] The gradient piezoresistive layer 40 of this flexible sensor 10 is divided into multiple piezoresistive zones, each filled with a graphene / polymer piezoresistive composite material with different porosities and particle sizes. When the flexible sensor 10 is subjected to external force, the different zones, due to differences in material properties and structure, can generate different degrees of resistance and elasticity changes, thereby collaboratively achieving precise control of the circuit conduction state. This solves the problem of the size of the insulating layer pores affecting the accuracy control of existing flexible sensors 10, making the flexible sensor 10 more sensitive and accurate in responding to various external forces, optimizing piezoresistive performance, and better meeting the stringent accuracy requirements of the flexible sensor 10 in different application scenarios.
[0038] In this design, the gradient piezoresistive layer 40 is directly bonded between the first and second flexible conductive layers 50, eliminating the need for openings in the insulating layer as required by traditional flexible sensors 10. This maximizes the integrity of the gradient piezoresistive layer 40, significantly improving the overall mechanical strength of the sensor and making it less susceptible to damage during daily use or under certain external impacts. Simultaneously, the sealing performance is greatly improved, effectively preventing impurities from entering and avoiding interference that could affect sensor performance, thus significantly enhancing the sensor's lifespan, stability, and reliability.
[0039] For example, such as Figures 1 to 3 As shown in the exemplary embodiment disclosed in this utility model, the gradient piezoresistive layer 40 of the flexible sensor 10 is divided into three piezoresistive zones along the direction from the first flexible conductive layer 30 to the second flexible conductive layer 50: a surface dense zone 41, an intermediate transition zone 42, and a bottom support zone 43. These three piezoresistive zones are sequentially filled with graphene / polymer piezoresistive composite materials with increasing porosity and particle size. The bottom support zone 43 is a biomimetic honeycomb air cavity structure 431, which includes honeycomb walls 432, honeycomb beams 433, and honeycomb cavities 434 defined by the honeycomb walls 432 and the honeycomb beams 433.
[0040] In the flexible sensor 10 of this invention, the gradient piezoresistive layer 40 is divided into a dense surface region 41, an intermediate transition region 42, and a bottom support region 43, with each region filled with a graphene / polymer piezoresistive composite material whose porosity and particle size both increase in a gradient. When the flexible sensor 10 is subjected to an external force, the dense surface region 41, with its smaller porosity and particle size, is the first to respond sensitively to weak external forces, producing a slight change in resistance. As the external force increases, the intermediate transition region 42, due to its material properties, connects with the dense surface region 41 and further adjusts the resistance. When subjected to a larger external force, the bottom support region 43 achieves a significant change in resistance due to its larger porosity and particle size. This coordinated operation of the regions enables precise differentiation and response to different external force intensities, greatly improving the accuracy of the piezoresistive performance.
[0041] The bottom support area 43 adopts a biomimetic honeycomb air cavity structure 431, which consists of honeycomb walls 432, honeycomb beams 433, and honeycomb cavities 434. The honeycomb walls 432 and honeycomb beams 433 form a stable mechanical framework, which can effectively disperse pressure when subjected to external forces, prevent damage due to excessive local stress, and significantly enhance the mechanical support capacity of the gradient piezoresistive layer 40 and even the entire flexible sensor 10. At the same time, the honeycomb cavity structure 434 reduces the overall weight while ensuring a certain strength, and helps to buffer external impacts, maintain the stability of the flexible sensor 10 in complex operating environments, ensure its stable operation, and extend its service life.
[0042] Based on the partitioned structure design of the gradient piezoresistive layer 40, each partition responds collaboratively as the applied external force gradually increases. The dense surface region 41, with its smaller porosity and particle size, undergoes elastic deformation first in the initial stage. As the external force continues to increase, the intermediate transition region 42 and the bottom support region 43 successively participate in the deformation process. The bottom support region 43, in particular, with its larger porosity, particle size, and biomimetic honeycomb air cavity structure 431, can generate sufficiently large deformation under greater external force. During deformation, the relative positions of the graphene particles inside the material change and they come into close contact with each other, thus turning on the circuit. When the external force is removed, based on the elastic recovery characteristics of each partition material and the rebound effect of the biomimetic honeycomb structure, the gradient piezoresistive layer 40 can quickly return to its original state. In this process, the graphene particles inside the material return to their original positions, the circuit returns to its initial state, the resistance increases again, and the flexible sensor 10 returns to the open-circuit state, ensuring that the flexible sensor 10 can stably and efficiently switch between on and off circuits under frequent external forces.
[0043] For example, such as Figure 1 As shown in the exemplary embodiment disclosed in this utility model, the first flexible conductive layer 30 of the flexible sensor 10 of this utility model includes a first silicone soft layer 32. A first conductive film is formed on the side of the first silicone soft layer 32 facing the gradient piezoresistive layer 40. The first conductive film has hemispherical protruding pressure-conducting portions 33 uniformly distributed. The second flexible conductive layer 50 includes a second silicone soft layer 52. A second conductive film is formed on the side of the second silicone soft layer 52 facing the gradient piezoresistive layer 40. The second conductive film has a hemispherical concave surface array 53 adapted to the hemispherical protruding pressure-conducting portions 33.
[0044] The first silicone soft layer 32 of the first flexible conductive layer 30 has good flexibility and can adapt to various complex bending, folding and other deformation scenarios, ensuring the stability of the flexible sensor 10 in different usage environments. The hemispherical raised pressure-conducting parts 33 uniformly distributed on the first conductive film can concentrate and transfer the external force to the gradient piezoresistive layer 40 when the flexible sensor 10 is subjected to external force, enhancing the effect on the piezoresistive layer, so that the piezoresistive layer can produce a significant resistance change under a small external force, greatly improving the sensitivity of the flexible sensor 10.
[0045] The second silicone soft layer 52 of the second flexible conductive layer 50 also provides flexibility, working together with the first silicone soft layer 32 to maintain the overall flexibility of the sensor. The hemispherical concave array 53 on the second conductive film is adapted to the hemispherical protruding pressure-conducting portion 33 of the first conductive film. When the flexible sensor 10 is compressed, the protruding pressure-conducting portion is embedded in the concave array. This concave-convex adaptation structure avoids the situation where the conductive layers are misaligned due to external forces, which would affect the conductivity. On the other hand, it can reduce resistivity, better guide current conduction, reduce signal transmission loss, and improve the sensitivity and reliability of the flexible sensor 10.
[0046] For example, such as Figure 1 , Figure 2 As shown in the exemplary embodiment disclosed in this utility model, the flexible substrate layer 60 of the flexible sensor 10 of this utility model is provided with a thermoplastic polyurethane (TPU) substrate layer 61, an Ecoflex impact absorption layer 62, and an Al2O3 encapsulation layer 63 in sequence in the direction away from the second flexible conductive layer 50. One surface of the thermoplastic polyurethane (TPU) substrate layer 61 is attached to the second flexible conductive layer 50.
[0047] The thermoplastic polyurethane (TPU) base layer 61 possesses excellent flexibility and mechanical properties. It adheres to the second flexible conductive layer 50, providing fundamental support for the entire flexible sensor 10. This ensures the structural stability of the second flexible conductive layer 50 and other components during complex deformation processes such as bending and twisting, maintaining the reliability of circuit connections. The Ecoflex impact-absorbing layer, positioned after the TPU base layer, exhibits excellent elasticity and effectively absorbs external impact energy. When the flexible sensor 10 suffers accidental collisions, compression, or other impacts, the Ecoflex layer converts the impact energy into its own elastic potential energy and disperses it, greatly reducing the impact on the internal structure. The Al2O3 encapsulation layer 63 is located on the outermost layer. Al2O3 possesses excellent insulation and chemical stability, preventing oxidation and corrosion of the flexible sensor 10 due to contact with moisture and corrosive gases in the air. This extends the service life of the flexible sensor 10 and ensures its long-term stable operation in complex environments.
[0048] For example, such as Figure 1 , Figure 2 As shown, in an exemplary embodiment of the present invention, the flexible panel layer 20 of the flexible sensor 10 of the present invention is a thick transparent PET film, and pressing areas 21 are distributed on the upper surface of the flexible panel layer 20.
[0049] The PET thick transparent film serves as the flexible panel layer 20. PET material possesses excellent flexibility, capable of adapting to the bending, twisting, and other deformation requirements of the flexible sensor 10 in various scenarios. This ensures that the entire flexible sensor 10 maintains its structural integrity in various complex operating environments, preventing breakage or disruption of other components due to panel layer rigidity. Pressing areas 21 are distributed on the upper surface of the flexible panel layer 20, allowing users to intuitively identify the pressing positions and preventing malfunctions or incorrect commands caused by accidental operation. This design enhances the user experience with the flexible sensor 10, making its operation more convenient and efficient. Whether in daily use or industrial control, it effectively improves the overall system's operational smoothness and accuracy.
[0050] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.
[0051] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0052] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
Claims
1. A flexible sensor, characterized in that, include Flexible panel layer; A first flexible conductive layer is disposed on the lower surface of the flexible panel layer, and a flexible substrate layer. A second flexible conductive layer is disposed on the upper surface of the flexible substrate layer, and the first flexible conductive layer and the second flexible conductive layer are opposite to each other; as well as A gradient piezoresistive layer is located between the first flexible conductive layer and the second flexible conductive layer. One surface of the gradient piezoresistive layer is attached to the first flexible conductive layer, and the other surface is attached to the second flexible conductive layer. The gradient piezoresistive layer is composed of a semiconductor material. The first flexible conductive layer is provided with a first contact potential, and the second flexible conductive layer is provided with a second contact potential. The first contact potential and the second contact potential are used to connect with external components.
2. The flexible sensor according to claim 1, characterized in that, The gradient piezoresistive layer is composed of at least one of graphene / polymer piezoresistive composite material, single-crystal silicon composite material, piezoresistive silicon-based material, conductive textile, and conductive foam material.
3. The flexible sensor according to claim 2, characterized in that, The gradient piezoresistive layer is composed of graphene / polymer piezoresistive composite material. The gradient piezoresistive layer is divided into several piezoresistive partitions along a specific direction. The several piezoresistive partitions are respectively filled with graphene / polymer piezoresistive composite materials with different porosities and particle sizes.
4. The flexible sensor according to claim 3, characterized in that, The gradient piezoresistive layer is divided into three piezoresistive zones along the direction from the first flexible conductive layer to the second flexible conductive layer, namely the surface dense zone, the intermediate transition zone, and the bottom support zone. The three piezoresistive zones are respectively filled with graphene / polymer piezoresistive composite materials with increasing porosity and particle size.
5. The flexible sensor according to claim 4, characterized in that, The bottom support area is a biomimetic honeycomb air cavity structure, which includes honeycomb walls, honeycomb beams, and honeycomb cavities defined by the honeycomb walls and honeycomb beams.
6. The flexible sensor according to claim 1, characterized in that, The first flexible conductive layer includes a first silicone soft layer, and a first conductive film is formed on the side of the first silicone soft layer facing the gradient piezoresistive layer. The first conductive film has hemispherical protrusions with pressure-conducting portions evenly distributed.
7. The flexible sensor according to claim 6, characterized in that, The second flexible conductive layer includes a second silicone soft layer, and a second conductive film is formed on the side of the second silicone soft layer facing the gradient piezoresistive layer. The second conductive film is provided with a hemispherical concave array adapted to the hemispherical protruding pressure guiding portion.
8. The flexible sensor according to claim 1, characterized in that, The flexible substrate layer is provided with a thermoplastic polyurethane (TPU) substrate layer, an Ecoflex impact absorption layer and an Al2O3 encapsulation layer in sequence in the direction away from the second flexible conductive layer, and one surface of the thermoplastic polyurethane (TPU) substrate layer is attached to the second flexible conductive layer.
9. The flexible sensor according to claim 1, characterized in that, The flexible panel layer is a thick transparent PET film, and pressing areas are distributed on the upper surface of the flexible panel layer.