Magnetron sputtering coating and plasma nitriding integrated device

Abstract

The utility model relates to the technical field of vacuum coating equipment, in particular to a magnetron sputtering coating and plasma nitriding integrated device which comprises a vacuum chamber, a workpiece rotating stand arranged in the vacuum chamber, a magnetron sputtering assembly and a plasma nitriding assembly, the magnetron sputtering assembly is installed on the side wall of the vacuum chamber, and the plasma nitriding assembly is installed on the workpiece rotating stand. The plasma nitriding assembly comprises a lamp filament ionization source and an auxiliary anode which are oppositely arranged in the vertical direction, the lamp filament ionization source is arranged at the top of the vacuum chamber, the auxiliary anode is arranged at the bottom of the vacuum chamber, and the plasma nitriding assembly is arranged in the vacuum chamber. The workpiece rotating stand is located between the filament ionization source and the auxiliary anode, the workpiece rotating stand can be used as a cathode to be matched with the auxiliary anode to form a glow discharge loop, and the magnetron sputtering function and the plasma nitriding function are integrated in the same vacuum chamber, so that the processing efficiency and the film layer binding force are remarkably improved.

Description

Technical Field

[0001] This utility model relates to the field of vacuum coating equipment technology, and in particular to an integrated device for magnetron sputtering coating and plasma nitriding. Background Technology

[0002] In modern industry, the requirements for the surface properties of metal parts are increasingly stringent. Simple nitriding or coating treatments often fall short of meeting the comprehensive demands for high wear resistance, high corrosion resistance, and high bonding strength. Nitriding can form a hardened layer on the workpiece surface, improving the substrate hardness and fatigue strength, but its surface corrosion resistance is relatively limited. Magnetron sputtering, on the other hand, can deposit various functional thin films, significantly improving surface wear resistance, corrosion resistance, and special functional properties. To obtain superior composite performance, a composite process route is often adopted in practice: plasma nitriding followed by coating, or coating followed by plasma nitriding. However, in traditional production models, these two processes must be completed in separate nitriding and coating equipment. After completing the previous process, the workpiece must be removed from one equipment, transferred, and reloaded into another. This process not only leads to low production efficiency and increased labor costs, but more importantly, the exposure of the workpiece to the atmospheric environment causes oxidation or contamination of its surface, severely affecting the quality of subsequent processes and the final bonding strength between the film and the substrate. Especially when switching between nitriding and coating or coating and nitriding, the new process chamber needs to be evacuated again, which is not only time-consuming and energy-intensive, but also increases the uncertainty and quality risk of process connection.

[0003] Therefore, current technology lacks an integrated device capable of continuously performing both plasma nitriding and magnetron sputtering coating processes without disrupting the vacuum or requiring workpiece transfer. This has become a key bottleneck restricting the widespread application of efficient, high-quality composite surface treatment technologies. Developing a compact, easy-to-operate device that enables the continuous integration of these two processes is of significant practical importance for improving processing efficiency, ensuring film adhesion, and reducing production costs. Utility Model Content

[0004] The purpose of this invention is to overcome the shortcomings and deficiencies of the existing technology and to provide an integrated magnetron sputtering coating and plasma nitriding device. By integrating magnetron sputtering and plasma nitriding functions into the same vacuum chamber, this invention significantly improves processing efficiency and film adhesion.

[0005] The technical solution adopted by this utility model is as follows: An integrated device for magnetron sputtering coating and plasma nitriding includes a vacuum chamber, a workpiece rotating frame disposed in the vacuum chamber, a magnetron sputtering assembly, and a plasma nitriding assembly. The magnetron sputtering assembly is installed on the side wall of the vacuum chamber and is positioned facing the workpiece rotating frame. The plasma nitriding assembly includes a filament ionization source and an auxiliary anode disposed opposite each other in the vertical direction. The filament ionization source is disposed at the top of the vacuum chamber, and the auxiliary anode is disposed at the bottom of the vacuum chamber. The workpiece rotating frame is located between the filament ionization source and the auxiliary anode, and the workpiece rotating frame can act as a cathode to cooperate with the auxiliary anode to form a glow discharge circuit.

[0006] The magnetron sputtering assembly includes a target, a target fixing plate, a magnetron layer, and a magnetron sputtering assembly water cooling plate. The target fixing plate is fixed to the side wall of the vacuum chamber. The target is disposed on the side of the target fixing plate facing the interior of the vacuum chamber. The magnetron layer is disposed on the side of the target fixing plate facing away from the target. The magnetron sputtering assembly water cooling plate covers the outer side of the magnetron layer facing away from the target fixing plate.

[0007] The magnetron layer is encapsulated with multiple sets of permanent magnets, and the water cooling plate of the magnetron sputtering assembly is provided with a cooling water circulation interface.

[0008] The filament ionization source includes a ventilation device, a filament ionization source water-cooling plate, and a filament. The filament ionization source water-cooling plate is fixed to the top inner wall of the vacuum chamber. The ventilation device passes through the filament ionization source water-cooling plate and is connected to the filament. The filament is installed on the side of the filament ionization source water-cooling plate facing the inside of the vacuum chamber.

[0009] The auxiliary anode includes an auxiliary anode water-cooling plate, an anode emission source, and an auxiliary anode water-cooling and power supply integrated box. The auxiliary anode water-cooling plate is fixed to the bottom of the vacuum chamber, the anode emission source is disposed on the auxiliary anode water-cooling plate, and the auxiliary anode water-cooling and power supply integrated box is disposed outside the vacuum chamber and passes through the bottom wall of the vacuum chamber and is connected to the auxiliary anode water-cooling plate.

[0010] The vacuum chamber has an opening on at least one side, and the vacuum chamber is also rotatably connected to a vacuum chamber side door via a hinge. The vacuum chamber side door can rotate relative to the vacuum chamber to close or open the opening.

[0011] The magnetron sputtering assembly is fixedly installed on the side wall of the vacuum chamber side door facing the interior of the vacuum chamber, and the filament ionization source and the auxiliary anode are arranged opposite each other at the top and bottom of the inside of the vacuum chamber side door.

[0012] The workpiece rotating frame is vertically positioned at the center of the vacuum chamber. A rotary drive mechanism is connected to the bottom of the workpiece rotating frame, and a conductive interface for connecting a negative bias power supply is provided on the workpiece rotating frame.

[0013] A heating component is also fixedly installed on the inner wall of the vacuum chamber, and the heating component is distributed along the circumference of the vacuum chamber.

[0014] The auxiliary anode water cooling plate is also detachably connected to a protective cover that surrounds the anode emission source. The inner wall of the protective cover has at least one slider protruding from it. The outer wall of the auxiliary anode water cooling plate has at least one groove and an inlet / outlet groove communicating with the groove. The depth of the groove at the end away from the inlet / outlet groove is less than the depth at the end near the inlet / outlet groove. The slider slides into or out of the groove along the inlet / outlet groove. The inner wall of the inlet / outlet groove is also provided with a limiting block. The upper and lower side walls of the limiting block are provided with guide slopes.

[0015] The beneficial effects of this utility model are as follows: By integrating magnetron sputtering and plasma nitriding functions into the same vacuum chamber, this utility model highly integrates two surface treatment processes into the same vacuum chamber, realizing continuous operation without breaking the vacuum throughout the entire process from nitriding to coating or from coating to nitriding. This effectively avoids the workpiece being exposed to the atmosphere midway, significantly improving the bonding strength and quality stability of the final film. At the same time, through structural optimization, the operation process is simplified, reducing equipment space occupation and energy consumption. Ultimately, it improves production efficiency, reduces production costs, and is suitable for industrial application scenarios with complex composite process requirements, significantly improving processing efficiency and film bonding strength. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, obtaining other drawings based on these drawings without creative effort still falls within the scope of this utility model.

[0017] Figure 1 This is a schematic diagram of the structure of this utility model;

[0018] Figure 2 This is a schematic diagram of the structure of the vacuum chamber side door in this utility model;

[0019] Figure 3 for Figure 2 A structural diagram from another perspective;

[0020] Figure 4 This is a schematic diagram of the magnetron sputtering assembly in this utility model;

[0021] Figure 5 This is a schematic diagram of the filament ionization source in this utility model;

[0022] Figure 6 This is a schematic diagram of the auxiliary anode structure in this utility model;

[0023] Figure 7 This is a schematic diagram of the structure of the protective cover in this utility model;

[0024] Figure 8 This is a schematic diagram of the auxiliary anode water-cooling plate in this utility model;

[0025] In the diagram, 1-vacuum chamber, 11-vacuum chamber side door, 12-hinge, 2-magnetron sputtering assembly, 21-target material, 22-target material fixing plate, 23-magnetron sputtering assembly water cooling plate, 24-magnetron layer, 3-filament ionization source, 301-ventilation device, 302-filament ionization source water cooling plate, 303-filament, 304-anode emission source, 305-auxiliary anode water cooling plate, 306-protective cover, 307-slider, 308-slide groove, 309-inlet / outlet groove, 310-limiting block, 311-guide slope, 31-auxiliary anode, 32-auxiliary anode water cooling and power supply integrated box, 4-heating assembly, 5-workpiece rotating frame. Detailed Implementation

[0026] To make the objectives, technical solutions and advantages of this utility model clearer, the utility model will be described in further detail below with reference to the accompanying drawings.

[0027] It should be noted that all uses of "first" and "second" in the embodiments of this utility model are for the purpose of distinguishing two entities or parameters with the same name but different names. It is clear that "first" and "second" are only for the convenience of expression and should not be construed as limiting the embodiments of this utility model. Subsequent embodiments will not explain this in detail.

[0028] The directional and positional terms used in this utility model, such as "up," "down," "front," "back," "left," "right," "inner," "outer," "top," "bottom," and "side," are merely for reference to the accompanying drawings. Therefore, the directional and positional terms used are for the purpose of explaining and understanding this utility model, and not for limiting the scope of protection of this utility model.

[0029] like Figures 1 to 8As shown, this is an embodiment of the present invention: an integrated magnetron sputtering coating and plasma nitriding device, comprising a vacuum chamber 1, a workpiece rotating frame 5 disposed within the vacuum chamber 1, a magnetron sputtering assembly 2, and a plasma nitriding assembly. The magnetron sputtering assembly 2 is mounted on the side wall of the vacuum chamber 1 and faces the workpiece rotating frame 5. The plasma nitriding assembly includes a filament ionization source 3 and an auxiliary anode 31 disposed opposite each other in the vertical direction. The filament ionization source 3 is disposed at the top of the vacuum chamber 1, and the auxiliary anode 31 is disposed at the bottom of the vacuum chamber 1. The workpiece rotating frame 5 is located between the filament ionization source 3 and the auxiliary anode 31, and the workpiece rotating frame 5 can act as a cathode to cooperate with the auxiliary anode 31 to form a glow discharge circuit.

[0030] The magnetron sputtering assembly 2 includes a target 21, a target fixing plate 22, a magnetron layer 24, and a magnetron sputtering assembly water cooling plate 23. The target fixing plate 22 is fixed to the side wall of the vacuum chamber 1. The target 21 is disposed on the side of the target fixing plate 22 facing the inside of the vacuum chamber 1. The magnetron layer 24 is disposed on the side of the target fixing plate 22 facing away from the target 21. The magnetron sputtering assembly water cooling plate 23 covers the outer side of the magnetron layer 24 facing away from the target fixing plate 22.

[0031] The magnetron layer 24 encapsulates multiple sets of permanent magnets, and the water cooling plate 23 of the magnetron sputtering assembly is provided with a cooling water circulation interface.

[0032] The filament ionization source 3 includes a ventilation device 301, a filament ionization source water cooling plate 302, and a filament 303. The filament ionization source water cooling plate 302 is fixed to the top inner wall of the vacuum chamber 1. The ventilation device 301 passes through the filament ionization source water cooling plate 302 and is connected to the filament 303. The filament 303 is installed on the side of the filament ionization source water cooling plate 302 facing the inside of the vacuum chamber 1.

[0033] The auxiliary anode 31 includes an auxiliary anode water-cooling plate 305, an anode emission source 304, and an auxiliary anode water-cooling and power supply integrated box 32. The auxiliary anode water-cooling plate 305 is fixed to the bottom of the vacuum chamber 1, the anode emission source 304 is disposed on the auxiliary anode water-cooling plate 305, and the auxiliary anode water-cooling and power supply integrated box 32 is disposed outside the vacuum chamber 1 and passes through the bottom wall of the vacuum chamber 1 and is connected to the auxiliary anode water-cooling plate 305.

[0034] The vacuum chamber 1 has an opening on at least one side, and the vacuum chamber 1 is also rotatably connected to a vacuum chamber side door 11 via a hinge 12. The vacuum chamber side door 11 can rotate relative to the vacuum chamber 1 to close or open the opening.

[0035] The magnetron sputtering assembly 2 is fixedly installed on the side wall of the vacuum chamber side door 11 facing the interior of the vacuum chamber 1, and the filament ionization source 3 and the auxiliary anode 31 are disposed opposite each other at the top and bottom of the inner side of the vacuum chamber side door 11.

[0036] The workpiece rotating frame 5 is vertically arranged at the center of the vacuum chamber 1. A rotary drive mechanism is connected to the bottom of the workpiece rotating frame 5. The workpiece rotating frame 5 is provided with a conductive interface for connecting a negative bias power supply.

[0037] A heating component 4 is also fixedly installed on the inner wall of the vacuum chamber 1, and the heating component 4 is distributed along the circumference of the vacuum chamber 1.

[0038] The auxiliary anode water cooling plate 305 is also detachably connected to a protective cover 306 that surrounds the anode emission source 304. The inner wall of the protective cover 306 has at least one slider 307 protruding. The outer wall of the auxiliary anode water cooling plate 305 has at least one groove 308 and an inlet / outlet groove 309 communicating with the groove 308. The depth of the groove 308 at the end away from the inlet / outlet groove 309 is less than the depth at the end near the inlet / outlet groove 309. The slider 307 slides into or out of the groove 308 along the inlet / outlet groove 309. The inner wall of the inlet / outlet groove 309 is also provided with a limiting block 310. The upper and lower side walls of the limiting block 310 are provided with guide slopes 311. The protective cover can suppress stray and secondary electrons, preventing electrons from running around randomly. It can also focus and control the electric field, maintain the electric field distribution, and prevent beam spot expansion. The protective cover is detachably connected to the auxiliary anode water cooling plate via a slider and a groove. The inner wall of the groove has a depth reduction structure. When the protective cover is rotated, the slider slides further into the groove from the end of the groove, and the tighter the slider is engaged, thus achieving a fixed connection of the protective cover. Rotating in the opposite direction will loosen it. At the same time, a limit block is also set in the groove to prevent the slider from sliding out by accident, ensuring a stable connection of the protective cover. The guide slope on the limit block is used to guide the slider to slide in or out of the groove.

[0039] The vacuum chamber 1 is the main cavity of this device, and one side of it is connected to an openable vacuum chamber side door 11 via a hinge 12 for loading and unloading workpieces. The internal space of the vacuum chamber 1 is used to accommodate the workpieces to be processed and to perform various technological processes.

[0040] A heating element 4 is installed on the inner wall of the vacuum chamber 1 to heat the vacuum chamber and the workpiece during the process, so as to meet the temperature requirements of different processes. A workpiece rotating frame 5 is set at the center of the vacuum chamber 1, and the workpiece rotating frame 5 is connected to a negative bias power supply. The workpiece rotating frame 5 is designed to be rotatable, so as to support the workpiece and drive the workpiece to rotate during the process to ensure the uniformity of the process.

[0041] The magnetron sputtering assembly 2 is fixedly mounted on one side wall panel of the vacuum chamber side door 11. It mainly consists of an inner target 21, a middle target fixing plate 22, an outer magnetron sputtering assembly water-cooling plate 23, and an integrated magnetron layer 24. The magnetron layer 24 encapsulates multiple sets of permanent magnets to form a magnetic field that confines electrons. The target 21 serves as the source of the material to be deposited, such as an AlCrNbTiV high-entropy alloy target. Cooling water is circulated through the magnetron sputtering assembly water-cooling plate 23 to cool the target during sputtering.

[0042] The plasma nitriding assembly includes a filament ionization source 3 symmetrically arranged at the top of the vacuum chamber side door 11 and an auxiliary anode 31 at the bottom, as well as a workpiece rotating frame 5 serving as the cathode. The filament ionization source 3 comprises a filament 303, a water-cooled plate 302, and a ventilation device 301. The filament 303 emits electrons through heating, ionizing the process gas introduced from the ventilation device 301 to form a high-density plasma. The auxiliary anode 31 includes an anode emission source 304 and a water-cooled plate 305, connected to a water-cooled power supply integrated box 32. It establishes a main discharge electric field with the negatively biased workpiece rotating frame 5, guiding the plasma to bombard the workpiece surface uniformly and stably. The workpiece rotating frame 5, while supporting the workpiece, also acts as a nitriding cathode. After applying a negative bias, it attracts high-energy nitrogen ions to continuously bombard its surface, achieving an integrated process of heating, activation, and nitrogen infiltration.

[0043] The workflow of this utility model is as follows: First, the workpiece is loaded onto the workpiece carrier 5, the side door 11 of the vacuum chamber is closed, and the vacuum chamber 1 is evacuated to a high vacuum. Then, the process mode is selected according to the preset composite process path (coating first, then nitriding, or nitriding first, then coating). All processes are completed continuously in the same vacuum chamber after a single vacuum evacuation, without the need to break the vacuum to transfer the workpiece. To better illustrate how to achieve coating first, then nitriding, or nitriding first, then coating using this device, two schemes are given in this embodiment. Specifically, taking AlCrNbTiV high-entropy alloy target as an example, an AlCrNbTiV high-entropy alloy target is installed on the magnetron sputtering assembly 2. The target substrate is 446mm long, 100mm wide, and 7mm high.

[0044] The first process involves depositing an AlCrNbTiV high-entropy alloy coating followed by plasma nitriding:

[0045] Step 1: Loading and Preparation. Install the workpiece to be processed onto the workpiece rotating frame, close the vacuum chamber, and evacuate to a background vacuum level better than 8.0 × 10⁻³ Pa.

[0046] Step 2: Preheating and Cleaning. Turn on the heating system, heat the workpiece to 350°C and maintain the temperature; introduce argon gas to 1.0 Pa, and apply a negative bias of 600V to the workpiece rotating frame for sputter cleaning for 30 minutes.

[0047] Step 3: Coating deposition. Stop argon flow and restore high vacuum; rotate the workpiece holder to make the workpiece rotate at a uniform speed; set the target material to a negative potential and apply a -60V bias voltage to the workpiece holder; introduce argon gas to 0.7Pa, turn on the radio frequency to 600W, pulse to 4KW, and deposit for 2 hours to form an AlCrNbTiV high-entropy alloy coating with a thickness of about 5μm.

[0048] Step 4: Plasma nitriding. Stop sputtering and rotate the workpiece to the center of the vacuum chamber; turn on the filament ionization source, with an anode current of 80A and a filament current of 125A, and introduce an argon-nitrogen-hydrogen mixed gas to 3.5Pa, with a ratio of 1:2:0.5; set the target material to a negative potential and apply a -150V bias voltage to the workpiece rotating frame; control the workpiece temperature at 350°C and perform nitriding treatment for 3 hours.

[0049] Step 5: Cooling and Removing the Part. After nitriding, the part is vacuum-cooled to below 150°C, then filled with high-purity nitrogen to atmospheric pressure before being removed.

[0050] Step Six: Repeat steps one through five, only changing the ratio of the argon-nitrogen-hydrogen mixture in step four, and complete five sets of experiments with ratios of 1:1.5:1, 1:1.25:1.2, 1:1.25:5, 1:1:1.5, and 1:0.5:1 respectively.

[0051] The second process involves first performing plasma nitriding followed by deposition of an AlCrNbTiV high-entropy alloy coating:

[0052] Step 1: Assembly and Preparation. Same as Step 1 of the first option.

[0053] Step Two: Preheating and Cleaning. Same as Step Two in the first solution.

[0054] Step 3: Plasma nitriding. Same as step 4 of the first scheme.

[0055] Step 4: Coating deposition. Same as step 3 of the first scheme.

[0056] Step 5: Cool and remove the part. Same as step 5 of the first solution.

[0057] Step Six: Repeat steps one through five, only changing the ratio of the argon-nitrogen-hydrogen mixture in step three, and complete five sets of experiments with ratios of 1:1.5:1, 1:1.25:1.2, 1:1.25:5, 1:1:1.5, and 1:0.5:1 respectively.

[0058] Through the two process schemes described above, this invention enables the continuous completion of composite treatment of plasma nitriding and magnetron sputtering coating on the same equipment without disrupting the vacuum. This not only greatly improves production efficiency and avoids pollution and oxidation caused by exposure of the workpiece to the atmosphere, but also makes the subsequent film layer (or nitriding layer) and the pilot layer more dense and firm, fully leveraging the composite surface strengthening effect of "1+1>2".

[0059] The above-disclosed embodiments are merely preferred embodiments of the present utility model and should not be construed as limiting the scope of the present utility model. Therefore, any equivalent variations made in accordance with the claims of the present utility model shall still fall within the scope of the present utility model.

Claims

1. An integrated device for magnetron sputtering coating and plasma nitriding, characterized in that: The system includes a vacuum chamber (1), a workpiece carrier (5) disposed within the vacuum chamber (1), a magnetron sputtering assembly (2), and a plasma nitriding assembly. The magnetron sputtering assembly (2) is mounted on the side wall of the vacuum chamber (1) and is positioned facing the workpiece carrier (5). The plasma nitriding assembly includes a filament ionization source (3) and an auxiliary anode (31) disposed opposite each other in the vertical direction. The filament ionization source (3) is disposed at the top of the vacuum chamber (1), and the auxiliary anode (31) is disposed at the bottom of the vacuum chamber (1). The workpiece carrier (5) is located between the filament ionization source (3) and the auxiliary anode (31), and the workpiece carrier (5) can act as a cathode and cooperate with the auxiliary anode (31) to form a glow discharge circuit.

2. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 1, characterized in that: The magnetron sputtering assembly (2) includes a target (21), a target fixing plate (22), a magnetron layer (24), and a magnetron sputtering assembly water cooling plate (23). The target fixing plate (22) is fixed to the side wall of the vacuum chamber (1). The target (21) is disposed on the side of the target fixing plate (22) facing the inside of the vacuum chamber (1). The magnetron layer (24) is disposed on the side of the target fixing plate (22) facing away from the target (21). The magnetron sputtering assembly water cooling plate (23) covers the outside of the magnetron layer (24) facing away from the target fixing plate (22).

3. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 2, characterized in that: The magnetron layer (24) is encapsulated with multiple sets of permanent magnets, and the water cooling plate (23) of the magnetron sputtering assembly is provided with a cooling water circulation interface.

4. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 1, characterized in that: The filament ionization source (3) includes a ventilation device (301), a filament ionization source water cooling plate (302), and a filament (303). The filament ionization source water cooling plate (302) is fixed to the top inner wall of the vacuum chamber (1). The ventilation device (301) passes through the filament ionization source water cooling plate (302) and is connected to the filament (303). The filament (303) is installed on the side of the filament ionization source water cooling plate (302) facing the inside of the vacuum chamber (1).

5. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 1, characterized in that: The auxiliary anode (31) includes an auxiliary anode water-cooling plate (305), an anode emission source (304), and an auxiliary anode water-cooling and power supply integrated box (32). The auxiliary anode water-cooling plate (305) is fixed to the bottom of the vacuum chamber (1). The anode emission source (304) is disposed on the auxiliary anode water-cooling plate (305). The auxiliary anode water-cooling and power supply integrated box (32) is disposed outside the vacuum chamber (1) and passes through the bottom wall of the vacuum chamber (1) and is connected to the auxiliary anode water-cooling plate (305).

6. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 1, characterized in that: The vacuum chamber (1) has an opening on at least one side, and the vacuum chamber (1) is also rotatably connected to a vacuum chamber side door (11) via a hinge (12). The vacuum chamber side door (11) can rotate relative to the vacuum chamber (1) to close or open the opening.

7. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 6, characterized in that: The magnetron sputtering assembly (2) is fixedly installed on the side wall of the vacuum chamber side door (11) facing the inside of the vacuum chamber (1), and the filament ionization source (3) and the auxiliary anode (31) are arranged opposite to each other at the top and bottom of the inside of the vacuum chamber side door (11).

8. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 1, characterized in that: The workpiece rotating frame (5) is vertically positioned at the center of the vacuum chamber (1). A rotary drive mechanism is connected to the bottom of the workpiece rotating frame (5). A conductive interface for connecting a negative bias power supply is provided on the workpiece rotating frame (5).

9. The integrated magnetron sputtering coating and plasma nitriding apparatus according to any one of claims 1 to 8, characterized in that: A heating component (4) is also fixedly installed on the inner wall of the vacuum chamber (1), and the heating component (4) is distributed along the circumference of the vacuum chamber (1).

10. The integrated magnetron sputtering coating and plasma nitriding apparatus according to claim 5, characterized in that: The auxiliary anode water cooling plate (305) is also detachably connected to a protective cover (306) that covers the anode emission source (304). The inner wall of the protective cover (306) has at least one slider (307) protruding. The outer wall of the auxiliary anode water cooling plate (305) has at least one groove (308) and an inlet / outlet groove (309) communicating with the groove (308). The depth of the groove (308) at the end away from the inlet / outlet groove (309) is less than the depth at the end near the inlet / outlet groove (309). The slider (307) slides into or out of the groove (308) along the inlet / outlet groove (309). The inner wall of the inlet / outlet groove (309) is also provided with a limiting block (310). The upper and lower side walls of the limiting block (310) are provided with guide slopes (311).

Images