Light-emitting semiconductor device
By employing independently controlled carrier units and light-transmitting units within a conductive carrier in semiconductor devices, problems such as spraying and dispensing have been solved, improving yield and light efficiency, enabling independent control of multi-color light, and reducing production costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- FUJIAN TIANDIAN OPTOELECTRONICS CO LTD
- Filing Date
- 2025-04-15
- Publication Date
- 2026-05-12
AI Technical Summary
Existing semiconductor light-emitting elements suffer from problems such as low coating process yield, difficulty in controlling chip shape, uneven light efficiency, and inability to independently control circuits during processing, resulting in low product yield and inconvenience in use.
Design a light-emitting semiconductor device that uses independently controllable carrier units within a conductive carrier, sets up light-transmitting units and baffles, and achieves independent circuit control between chips by filling the chip with silicone sheets and transparent adhesive of different colors, and improves light efficiency through a light-concentrating structure.
It improved the product yield and luminous efficacy, solved the problems of uneven luminous efficacy and yellow ring, reduced production costs, and enabled independent control between chips.
Smart Images
Figure CN224234101U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of light-emitting semiconductor technology, and specifically relates to a light-emitting semiconductor device. Background Technology
[0002] Semiconductor light-emitting elements have advantages such as energy saving, environmental protection, small size, long lifespan, and high luminous efficiency. Moreover, their emission wavelength range covers the ultraviolet to infrared range, which has a wide range of applications. For example, the ultraviolet band is used in disinfection, sterilization, curing, and medical applications; the infrared band is used in security monitoring, optocouplers, and plant lighting; and the visible light band is used in displays, backlights, streetlights, and vehicle lights.
[0003] Currently, the main processing technologies for semiconductor light-emitting elements include spraying, dispensing, and phosphor layer application. However, spraying requires proper application to unsprayed areas, and the chip's position, shape, thickness, and diffusion position are difficult to control, resulting in a low first-pass yield. Dispensing not only has the aforementioned drawbacks but also suffers from inconsistent chip shape, poor color concentration, and light emission with a white center and a blue-yellow ring around the edges. In phosphor layer application, the light around the chip and the phosphor layer are in direct contact with the air, which can damage the light source in SMD device mounting, causing a yellow ring around the chip. Furthermore, the circuits between existing semiconductor light-emitting element chips cannot be independently controlled, leading to inconvenience in use.
[0004] Therefore, in order to address the above-mentioned technical problems, it is necessary to design light-emitting semiconductor devices to achieve the mounting of LED chips of any size, solve the problems caused by product filling relying on spraying, dispensing, and attaching phosphor layers, improve product yield, improve luminous efficiency while ensuring the emission of multiple colors of light, and enable independent control of circuits between chips. These are the technical problems that need to be solved by those skilled in the art. Utility Model Content
[0005] To address the aforementioned issues, this invention provides a light-emitting semiconductor device that enables the mounting of LED chips of any size, solving problems associated with product filling methods such as spraying, dispensing, and applying fluorescent layers, thereby improving product yield. While ensuring the emission of multiple colors of light, it also enhances luminous efficiency and allows for independent control of the circuitry between chips.
[0006] To achieve the above objectives, this utility model provides the following solution:
[0007] A light-emitting semiconductor device includes a conductive carrier, wherein at least two sets of independently controllable carrier units with positive and negative electrodes are disposed inside the conductive carrier, and a chip connected to the positive and negative electrodes of the carrier unit is disposed on any set of carrier units, and at least one of the chips is disposed on a light-transmitting unit, wherein the circumference of the light-transmitting unit is filled with a barrier wall for blocking the light around the chip and the light-transmitting unit.
[0008] Preferably, the light-transmitting unit is a first silicone sheet disposed on the chip.
[0009] Preferably, the first silicone sheet is a silicone sheet internally filled with a light-emitting body that emits a light color different from that of the chip itself when excited by the chip.
[0010] Preferably, the overall color of the light-emitting element filled with the first silicone sheet on different carrier units is different.
[0011] Preferably, the top of the first silicone sheet is further provided with a protective layer for covering the top of the conductive carrier.
[0012] Preferably, at least two of the chips are provided with the light-transmitting unit, and the chips include a first chipset and a second chipset, wherein,
[0013] The light-transmitting unit includes a second silicone sheet disposed on the first chipset and a transparent adhesive disposed on the second chipset. The second silicone sheet contains a light-emitting element that emits a color different from the light emitted by the chip itself when excited by the chip. The transparent adhesive does not contain any light-emitting element. The top of the barrier, the second silicone sheet, and the transparent adhesive is covered with an excitation layer. The excitation layer can be excited by the chip it covers and emit light of a color different from the light emitted by the chip itself.
[0014] Preferably, the conduction circuit between the chip and the carrier unit is further provided with a Zener diode to prevent the chip from being damaged.
[0015] Preferably, a light-concentrating structure to enhance light intensity is further provided above the protective layer.
[0016] Preferably, the light-concentrating structure is a light-concentrating structure with a medium inside that enhances light efficiency and improves light spot.
[0017] The present invention achieves the following technical advantages over the prior art:
[0018] By setting light-transmitting units on the chip, chips of any size can be mounted, ensuring the thickness and shape of the light-transmitting units. This solves the problems caused by product filling relying on spraying, dispensing, and applying phosphor layers, improving product yield. Moreover, the light-transmitting units can produce different colors. By filling the periphery of the light-transmitting units with baffles, the baffles can block the light around the chip and the light-transmitting units, so that the light from the chip can only be emitted from above the chip and the light-transmitting units. This effectively solves the yellow ring problem and ensures the quality of light emission. While ensuring the emission of multiple colors of light, it improves the light efficiency and effectively saves production costs. Furthermore, the multiple sets of carrier units inside the conductive carrier can be controlled independently, ensuring that the opening and closing of chips set on different carrier units can be controlled individually. If one circuit is broken, it will not affect the opening of other chips. Attached Figure Description
[0019] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0020] Appendix Figure 1 This is a flowchart illustrating the front view of the first embodiment of the light-emitting semiconductor device disclosed in this utility model.
[0021] Appendix Figure 2 A flowchart illustrating a top view of an embodiment of the light-emitting semiconductor device disclosed in this utility model.
[0022] Appendix Figure 3 This is a flowchart illustrating the front view of the second embodiment of the light-emitting semiconductor device disclosed in this utility model.
[0023] Appendix Figure 4 This is a flowchart illustrating a top view of Embodiment 2 of the light-emitting semiconductor device disclosed in this utility model embodiment;
[0024] Among them, S100 is a conductive carrier; S10A is a first fixing material; S102 is a chip; S10E is a first conductive line; S101 is a second conductive line; S10D is a Zener tube; S10B is a second fixing material; S103 is a first silicone sheet; S105 is a barrier; S106 is a protective layer; S107 is a light-concentrating structure; S108 is a dielectric; S201 is a transparent adhesive; S104 is a second silicone sheet; and S10C is an excited layer. Detailed Implementation
[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0026] The purpose of this invention is to provide a light-emitting semiconductor device that enables the mounting of LED chips of any size, solves the problems caused by product filling relying on spraying, dispensing, and attaching fluorescent layers, improves product yield, enhances luminous efficiency while ensuring the emission of multiple colors of light, and enables independent control of circuits between chips.
[0027] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0028] refer to Figures 1-4 The light-emitting semiconductor device disclosed in this embodiment includes a conductive carrier S100. The conductive carrier S100 contains at least two sets of independently controllable carrier units with positive and negative electrodes. Each set of carrier units has a chip S102 that is electrically connected to the positive and negative electrodes of that carrier unit. At least one chip S102 has a light-transmitting unit that is excited by the chip S102 to produce a light-emitting color different from the chip itself. The circumference of the light-transmitting unit is filled with a barrier wall S105 to block light from the chip S102 and the surrounding light-transmitting unit. By setting the light-transmitting unit on the chip S102, not only can chips S102 of any size be attached, ensuring the thickness and shape of the light-transmitting unit, but also the problems caused by relying on spraying, dispensing, and applying fluorescent layers for product filling are solved, improving efficiency. The product yield is high, and the light-transmitting unit can produce different colors under the excitation of the chip. The light-transmitting unit is filled with a baffle S105 around its periphery. The baffle S105 can block the light around the chip S102 and the light-transmitting unit, so that the light of the chip S102 can only be emitted from the top of the chip S102 and the light-transmitting unit. This can effectively solve the yellow ring problem, improve the light output quality, and increase the intensity of single light. While ensuring that multi-color emission can be achieved, the light efficiency is improved, which effectively saves production costs. Moreover, the multiple sets of carrier units inside the conductive carrier S100 can be controlled independently, which can ensure that the opening and closing of the chips S102 set on different carrier units can be controlled individually. If one circuit is broken, it will not affect the opening of other chips S102.
[0029] It should be noted that the conductive carrier S100 can be one of the following: silicone resin, ceramic, resin, PPA (polyphthalamide), PCT (polycyclohexanedimethyl terephthalate), copper, iron, and aluminum. The chip S102 on one conductive carrier S100 can be set as one, or as two or more. The chip S102 can be a light-emitting chip made of materials such as gallium nitride, gallium arsenide, sapphire, and silicon substrate, and can be a vertical chip, a flip chip, or a horizontal chip. The carrier unit can be independently controlled, which means that there is a separate circuit to control each carrier unit, so that the opening and closing of the chips S102 on different carrier units can be controlled individually.
[0030] The barrier S105 can be silicone, a mixture of titanium dioxide and silicone, or other mixtures of barrier S105. Alternatively, it can be made by plating silicon dioxide and titanium dioxide layers around the chip S102 as a barrier S105. All of these are within the scope of protection of this patent. In addition to blocking light around the chip S102, the barrier S105 can also block the surface layer where the conductive carrier S100 and the chip S102 are bonded, thus playing a protective role and protecting the material of this layer from environmental influences during use.
[0031] It should be noted that the conductive carrier S100 has a groove structure, and the retaining wall S105 is filled inside the groove structure.
[0032] refer to Figures 1-2 In one implementation, the light-transmitting unit is a first silicone sheet S103 disposed on the chip S102. Multiple carrier units can be disposed on the same conductive carrier S100, and a chip S102 can be disposed on each carrier unit, and a first silicone sheet S103 can be disposed on the chip S102 (i.e., multiple first silicone sheets S103 are disposed). By disposing of multiple first silicone sheets S103, the semiconductor device can emit light of the same or different colors. Alternatively, a carrier unit can be disposed on a conductive carrier S100, a chip S102 can be disposed on a carrier unit, and a first silicone sheet S103 can be disposed on the chip S102.
[0033] refer to Figures 1-2 In one implementation, the first silicone sheet S103 is a silicone sheet internally provided with a light-emitting body that, when excited by the chip S102, produces a light-emitting color different from that of the chip S102 itself. The light-emitting body is a phosphor. After being excited by the chip S102, the light-emitting body produces different colors of light with the following wavelengths: red phosphor wavelength: 600-650nm, green phosphor wavelength: 510-530nm, yellow phosphor wavelength: 540-560nm, and blue phosphor wavelength: 410-480nm. That is, after filling the first silicone sheet S103 with light-emitting bodies that can produce different colors, when the chip S102 is turned on, the light-emitting body inside the first silicone sheet S103 will be excited by the chip S102 to produce different colors of light.
[0034] refer to Figures 1-2 In one implementation, two chips S102 and two first silicone sheets S103 are provided. The same light-emitting element or different light-emitting elements can be provided in the two first silicone sheets S103, so that the semiconductor device emits light of the same or different colors.
[0035] It should be noted that the thickness of the first silicone sheet S103 is 5um to 1cm, and its length and width are in the range of 100um*100um to 1cm*1cm.
[0036] refer to Figures 1-2 In one implementation, the top of the first silicone sheet S103 is also covered with a protective layer S106 for covering the top of the conductive carrier S100. This layer not only protects the barrier wall S105, but also increases the light conduction of the barrier wall S105 (because the barrier wall can adjust the light propagation path through reflection or refraction to optimize the light directionality), so that the light does not pass through the air and increases the heat dissipation of the device itself.
[0037] It should be noted that the protective layer S106 is made of silicone, silicone resin, silicon dioxide, with titanium dioxide and melanin added to the silicone.
[0038] refer to Figures 3-4 In one implementation, at least two chips S102 are provided with light-transmitting units, and each chip S102 includes a first chipset and a second chipset.
[0039] The light-transmitting unit includes a second silicone sheet S104 disposed on a first chipset and a transparent adhesive S201 disposed on the second chipset. The second silicone sheet S104 contains a light-emitting element that, when excited by the chip S102, produces a light color different from that of the chip S102 itself. The transparent adhesive S201 contains no light-emitting element. An excited layer S10C is laid on the top of the barrier S105, the second silicone sheet S104, and the transparent adhesive S201. The excited layer S10C can be excited by the chip S102 it covers, producing light of a color different from that of the chip S102 itself. When the chip S102 at the bottom of the second silicone sheet S104 is energized, the second silicone sheet... Because a light-emitting element is provided inside the sheet S104, it can be excited by the chip S102 at its bottom to produce a corresponding color. When the chip S102 at the bottom of the transparent adhesive S201 is energized, since the transparent adhesive S201 does not contain any light-emitting element, the color produced is that of the chip S102. At this time, the excited layer S10C located on top of the transparent adhesive S201 and the second silicone sheet S104 will produce a corresponding color under the excitation of the chip S102 at the bottom of the transparent adhesive S201. Under the excitation of the chip S102 at the bottom of the second silicone sheet S104, the color produced by the second silicone sheet S104 will be superimposed with the color produced by the excited layer S10C, producing different colors.
[0040] It should be noted that a light emitter is also provided in the excited layer S10C so that the excited layer S10C produces different colors after being excited, and the excited layer is a fluorescent adhesive layer.
[0041] refer to Figures 1-4 In one implementation, when chip S102 is a horizontal chip, the horizontal chip is connected to the carrier unit through the first conductive line S10E and the second conductive line S101. When chip S102 is a vertical chip, the vertical chip only needs one conductive line to be connected to the carrier unit. When chip S102 is a flip chip, the flip chip does not need to be provided with conductive lines, and the flip chip itself is bonded and connected to the carrier unit.
[0042] refer to Figures 1-4 As one implementation, the conduction circuit between chip S102 and carrier unit is also provided with a Zener diode S10D to prevent chip S102 from being damaged. By providing Zener diode S10D, when the forward and reverse voltage or current exceeds the voltage or current of chip S102, chip S102 will not be impacted or damaged.
[0043] refer to Figures 1-2 As one implementation, a light-concentrating structure S107 for enhancing light intensity is provided above the protective layer S106. By providing the light-concentrating structure S107, the emitted light can be focused to one position, thereby enhancing the light intensity. The light-concentrating structure S107 can also protect the light-emitting semiconductor, thus serving as a protective layer.
[0044] It should be noted that a light-concentrating structure S107 is also provided above the light-concentrating layer. The light-concentrating structure S107 is a convex lens structure.
[0045] refer to Figures 1-4 As one implementation method, the light-concentrating structure S107 is a light-concentrating structure with a medium S108 inside that improves light efficiency and improves light spot. The medium S108 can be silica particles, nanoparticles, melanin, or titanium dioxide materials.
[0046] refer to Figures 1-4 In one embodiment, a carrier unit is provided on the conductive carrier S100, and a first fixing material S10A for connecting the carrier unit and the chip S102 is provided between the carrier unit and the chip S102. When the chip S102 is a flip chip, the first fixing material S10A is flux or solder paste. When the chip S102 is a horizontal chip, the first fixing material S10A is a silicone resin mixture. When the chip S102 is a vertical chip, the first fixing material S10A is a silver paste mixture.
[0047] refer to Figures 1-4 In one embodiment, a second fixing material S10B is provided between the chip S102 and the first silicone sheet S103, the second silicone sheet S104, or the transparent adhesive S201. The second fixing material S10B is uniformly silicon material, specifically methyl or phenyl.
[0048] It should be noted that the dimensions of the first silicone sheet S103 and the second silicone sheet S104 are larger than the dimensions of the chip S102. When the first silicone sheet S103 and the second silicone sheet S104 cover the chip S102, the circumferential extension length of the second fixing material S10B is 1µm to 2cm, which allows the silicon material of the second fixing material S10B to overflow from the chip S102. In this way, when the chip S102 is bonded to the first silicone sheet S103 and the second silicone sheet S104, the barrier S105 will not enter the bonding layer between the chip S102 and the first silicone sheet S103 and the second silicone sheet S104, thus avoiding the problem that the barrier S105 would hinder the light emission of the chip S102. At the same time, the overflowing second fixing material S10B will form an inverted triangle with the first silicone sheet S103 and the second silicone sheet S104. The inverted triangle structure can change the propagation path of light at the material interface and guide more light to the chip surface by utilizing the principle of total internal reflection, thereby effectively improving the light emission function of the chip S102.
[0049] The processing steps of Embodiment 1 of this utility model are as follows:
[0050] A carrier unit is disposed on the conductive carrier S100;
[0051] The carrier unit fixes the chip S102 using the first fixing material S10A;
[0052] The first silicone sheet S103 is fixed on the chip S102 by the second fixing material S10B;
[0053] A retaining wall S105 is laid in the circumferential direction of the first silicone sheet S103 within the conductive carrier S100;
[0054] Above the retaining wall S105, a protective layer S106 is laid and covers the top of the conductive carrier S100.
[0055] A light-concentrating structure S107 is provided on top of the protective layer S106.
[0056] The processing steps of Embodiment 2 of this utility model are as follows:
[0057] A carrier unit is disposed on the conductive carrier S100;
[0058] The carrier unit fixes the chip S102 using the first fixing material S10A;
[0059] A second silicone sheet S104 and a transparent adhesive S201 are fixed on the chip S102 by a second fixing material S10B;
[0060] A retaining wall S105 is laid in the circumferential direction within the conductive carrier S100, located between the second silicone sheet S104 and the transparent adhesive S201.
[0061] An excited layer S10C is laid above the retaining wall S105;
[0062] Above the excited layer S10C, a protective layer S106 is laid and covers the top of the conductive carrier S100.
[0063] A light-concentrating structure S107 is provided on top of the protective layer S106.
[0064] Any adaptive changes made according to actual needs are within the protection scope of this utility model.
[0065] It should be noted that, for those skilled in the art, it is obvious that this utility model is not limited to the details of the above exemplary embodiments, and that this utility model can be implemented in other specific forms without departing from the spirit or essential characteristics of this utility model. Therefore, the embodiments should be considered as exemplary and non-limiting in all respects, and the scope of this utility model is defined by the appended claims rather than the foregoing description. Therefore, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within the utility model. No reference numerals in the claims should be construed as limiting the scope of the claims.
Claims
1. A light-emitting semiconductor device, characterized in that, The device includes a conductive carrier, which contains at least two sets of independently controllable carrier units with positive and negative electrodes. Each set of carrier units has a chip that is connected to the positive and negative electrodes of the carrier unit. At least one chip has a light-transmitting unit, and the circumference of the light-transmitting unit is filled with a barrier to block light from the chip and the area around the light-transmitting unit.
2. The light-emitting semiconductor device according to claim 1, characterized in that, The light-transmitting unit is a first silicone sheet disposed on the chip.
3. The light-emitting semiconductor device according to claim 2, characterized in that, The first silicone sheet is a silicone sheet internally filled with a light-emitting body that emits a different color of light than the chip itself when excited by the chip.
4. The light-emitting semiconductor device according to claim 3, characterized in that, The overall color of the light-emitting body filled with the first silicone sheet on different carrier units is different.
5. The light-emitting semiconductor device according to claim 3, characterized in that, The top of the first silicone sheet is also covered with a protective layer for covering the top of the conductive carrier.
6. The light-emitting semiconductor device according to claim 1, characterized in that, At least two of the chips are provided with the light-transmitting unit, and the chips include a first chipset and a second chipset, wherein, The light-transmitting unit includes a second silicone sheet disposed on the first chipset and a transparent adhesive disposed on the second chipset. The second silicone sheet contains a light-emitting element that emits a color different from the light emitted by the chip itself when excited by the chip. The transparent adhesive does not contain any light-emitting element. The top of the barrier, the second silicone sheet, and the transparent adhesive is covered with an excitation layer. The excitation layer can be excited by the chip it covers and emit light of a color different from the light emitted by the chip itself.
7. The light-emitting semiconductor device according to claim 1, characterized in that, The conduction circuit between the chip and the carrier unit is also equipped with a Zener diode to prevent the chip from breaking down.
8. The light-emitting semiconductor device according to claim 5, characterized in that, A light-concentrating structure to enhance light intensity is also provided above the protective layer.
9. The light-emitting semiconductor device according to claim 8, characterized in that, The light-concentrating structure is a light-concentrating structure with a medium inside that enhances light efficiency and improves light spot.