Seed crystal chuck, crystal pulling equipment and single crystal furnace

Abstract

The utility model provides a seed crystal chuck, crystal pulling equipment and a single crystal furnace. The seed crystal chuck comprises a first fixing part, a second fixing part and a fixing hole; the first fixing part and the second fixing part are fixedly connected in sequence in the first direction. The first fixing part is of a gradually-expanding structure in the first direction, and the second fixing part is hemispherical, so that the first fixing part and the second fixing part form a water-drop-like shape. In the crystal pulling process, argon is continuously blown in, and the purpose of blowing in argon is to remove volatile matters in the single crystal furnace and cool seed crystals and single crystals being pulled at the same time, so that the temperature gradient is increased, and the growth rate and stability of the single crystals are further improved. Therefore, the argon can be effectively increased to take away volatile matters generated in a thermal field, and in addition, the flowing speed of the argon is increased, so that the temperature gradient in the furnace is increased, the growth rate of seed crystals is increased, the crystal forming rate of single crystals is improved, and the single crystals grow more stably.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to seed crystal chucks, crystal pulling equipment, and single crystal furnaces. Background Technology

[0002] Combination Figure 1 As shown, the current structure of the seed crystal chuck is a cylinder 1' at the top and a semi-circular body 2' at the bottom. During the single crystal pulling process, argon gas is continuously blown into the top of the auxiliary chamber of the single crystal furnace. The purpose of blowing in argon gas is to remove volatiles in the single crystal furnace and to cool the seed crystal and the single crystal being pulled, thereby increasing the temperature gradient and improving the growth rate and stability of the single crystal.

[0003] However, since the upper part of the current seed crystal chuck is cylindrical, the following disadvantages exist: (1) The upper part of the seed crystal chuck with a cylindrical structure has a large cross-sectional area, which will hinder the smooth blowing of argon gas, that is, hinder the flow of argon gas and reduce the argon gas flow rate. (2) The combined effect of the unsmooth argon gas flow and the limited flow rate makes the gas flow in the single crystal furnace unstable, which in turn affects the crystallization efficiency of the single crystal.

[0004] Therefore, there is an urgent need for seed crystal chucks, crystal pulling equipment, and single crystal furnaces to solve the technical problems existing in the current technology to a certain extent. Utility Model Content

[0005] The purpose of this application is to provide a seed crystal chuck, crystal pulling equipment, and single crystal furnace, which can improve argon gas flow efficiency, enhance volatile matter removal ability, and improve single crystal growth quality and stability to a certain extent.

[0006] This application provides a seed crystal chuck, including a first fixing part, a second fixing part, and a fixing hole;

[0007] The first fixing part and the second fixing part are sequentially fixedly connected along the first direction; the first fixing part has a gradually expanding structure along the first direction, and the second fixing part is hemispherical, so that the first fixing part and the second fixing part form a teardrop-like shape;

[0008] The fixing hole is used to fix the seed crystal, and the fixing hole passes through the first fixing part and the second fixing part in sequence along the first direction.

[0009] In the above technical solution, the fixing hole further includes a first fixing segment, a second fixing segment, and a third fixing segment that are sequentially connected along the first direction;

[0010] The first fixing segment is formed in the first fixing part, and the second fixing segment and the third fixing segment are formed in the second fixing part;

[0011] The diameter of the first fixed segment is larger than the diameter of the third fixed segment, and the second fixed segment has a tapered structure along the first direction.

[0012] In the above technical solution, the second fixed segment is further defined as a frustum.

[0013] In the above technical solution, the fixing hole further includes a first fixing segment, a second fixing segment, a third fixing segment and a fourth fixing segment that are sequentially connected along the first direction;

[0014] The first fixing segment is formed in the first fixing part, and the second fixing segment, the third fixing segment, and the fourth fixing segment are formed in the second fixing part;

[0015] The diameter of the first fixed segment is equal to the diameter of the second fixed segment and is greater than the diameter of the fourth fixed segment, and the third fixed segment has a tapered structure along the first direction.

[0016] In the above technical solution, the third fixed segment is further defined as a frustum.

[0017] In the above technical solution, the seed crystal chuck further includes an exhaust hole;

[0018] The vent is provided in the first fixing part and / or the second fixing part; and the vent communicates with the fixing hole to conduct the gas inside the first fixing part and / or the second fixing part to the outside through the vent.

[0019] In the above technical solution, the number of exhaust holes is multiple, and the multiple exhaust holes are arranged at equal intervals along the first direction.

[0020] This application also provides a crystal pulling device, including a weight and the above-mentioned seed crystal chuck; the weight is threadedly connected to one end of the first fixing part away from the second fixing part.

[0021] In the above technical solution, the hammer has a gradually expanding structure along the first direction, so that the hammer, the first fixing part and the second fixing part are teardrop-shaped.

[0022] This application also provides a single crystal furnace, including the above-described seed crystal chuck.

[0023] Compared with the prior art, this application has the following advantages:

[0024] This application provides a seed crystal chuck, including a first fixing part, a second fixing part, and a fixing hole;

[0025] The first fixing part and the second fixing part are sequentially fixedly connected along the first direction; the first fixing part has a gradually expanding structure along the first direction, and the second fixing part is hemispherical, so that the first fixing part and the second fixing part form a teardrop-like shape;

[0026] The fixing hole is used to fix the seed crystal, and the fixing hole passes through the first fixing part and the second fixing part in sequence along the first direction.

[0027] In summary, during the actual crystal pulling process, argon gas is continuously blown in. The purpose of blowing in argon gas is to remove volatiles within the single crystal furnace and to cool the seed crystal and the single crystal being pulled, thereby increasing the temperature gradient and improving the growth rate and stability of the single crystal. Compared to existing cylindrical seed crystal chucks, the seed crystal chuck of this application has a streamlined, teardrop-shaped design, which significantly reduces the cross-sectional area near the argon gas inlet, reducing argon gas resistance and increasing the argon gas flow rate and volume. This effectively increases the amount of volatiles carried away by the argon gas within the thermal field. Furthermore, the increased argon gas flow rate further increases the temperature gradient within the furnace, accelerating the seed crystal growth rate, improving the single crystal formation rate, and making the single crystal growth more stable.

[0028] This application also provides a crystal pulling device, including a weight and the aforementioned seed crystal chuck; the weight is threadedly connected to one end of the first fixing part away from the second fixing part. All the beneficial effects of the aforementioned seed crystal chuck are not specifically described here.

[0029] This application also provides a single crystal furnace, including the aforementioned seed crystal chuck. All the beneficial effects of the aforementioned seed crystal chuck will not be specifically elaborated here. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure of a seed crystal chuck in the prior art;

[0032] Figure 2 This is a schematic diagram of the structure of the seed crystal chuck provided in this application;

[0033] Figure 3 A cross-sectional view of the seed crystal chuck provided in this application;

[0034] Figure 4Cross-sectional views of the first and second fixing parts in the seed crystal chuck provided in this application;

[0035] Figure 5 A cross-sectional view of the cover portion in the seed crystal chuck provided in this application;

[0036] Figure 6 A simulation diagram of argon gas flow is provided, using a seed crystal chuck from existing technology and introducing argon gas.

[0037] Figure 7 The diagram shows the simulated flow of argon gas, using the seed crystal chuck from this application and introducing argon gas.

[0038] Reference numerals: 1'-cylinder; 2'-semi-circular body; 1-first fixing part; 2-second fixing part; 3-fixing hole; 301-first fixing section; 302-second fixing section; 303-third fixing section; 4-first direction; 5-vent hole; 6-counterweight; 601-through hole. Detailed Implementation

[0039] The following detailed embodiments are provided to help the reader gain a comprehensive understanding of the methods, apparatus, and / or systems described herein. However, various changes, modifications, and equivalents of the methods, apparatus, and / or systems described herein will be apparent after understanding the disclosure of this application. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein; changes that will be apparent after understanding the disclosure of this application are possible, except for operations that must occur in a specific order. Furthermore, for clarity and brevity, descriptions of features known in the art may be omitted.

[0040] The features described herein may be implemented in different forms and should not be construed as being limited to the examples described herein. Rather, the examples described herein have been provided merely to illustrate some of the many feasible ways of implementing the methods, apparatus, and / or systems described herein that will be apparent upon understanding the disclosure of this application.

[0041] Throughout the specification, when an element (such as a layer, region, or substrate) is described as being "on" another element, "connected to" another element, "bonded to" another element, "on" another element, or "covering" another element, it may be directly "on" another element, "connected to" another element, "bonded to" another element, "on" another element, or "covering" another element, or there may be one or more other elements in between. In contrast, when an element is described as being "directly on" another element, "directly connected to" another element, "directly bonded to" another element, "directly on" another element, or "directly covering" another element, there may be no other elements in between.

[0042] As used herein, the term “and / or” includes any one of the relevant items listed and any combination of any two or more items.

[0043] Although terms such as “first,” “second,” and “third” may be used herein to describe individual components, assemblies, regions, layers, or parts, these components, assemblies, regions, layers, or parts are not limited by these terms. Rather, these terms are used only to distinguish one component, assembly, region, layer, or part from another. Therefore, without departing from the teachings of the examples described herein, the first component, assembly, region, layer, or part referred to as the second component, assembly, region, layer, or part may also be referred to as the second component, assembly, region, layer, or part.

[0044] For ease of description, spatial relation terms such as “above,” “upper,” “below,” and “lower” are used herein to describe the relationship between one element and another, as shown in the accompanying drawings. Such spatial relation terms are intended to include not only the orientation depicted in the drawings but also different orientations of the device during use or operation. For example, if the device in the drawings is flipped, an element described as being “above” or “upper” relative to another element will subsequently be “below” or “lower” relative to that other element. Therefore, the term “above” includes both “above” and “below” orientations depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relation terms used herein will be interpreted accordingly.

[0045] The terminology used herein is for the purpose of describing various examples only and is not intended to limit this disclosure. Unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. The terms “comprising,” “including,” and “having” enumerate the stated features, quantities, operations, components, elements, and / or combinations thereof, but do not exclude the presence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.

[0046] Variations in the shapes shown in the accompanying drawings may occur due to manufacturing techniques and / or tolerances. Therefore, the examples described herein are not limited to the specific shapes shown in the accompanying drawings, but include changes in shape that may occur during manufacturing.

[0047] The features of the examples described herein can be combined in various ways that will be apparent upon understanding the disclosure of this application. Furthermore, although the examples described herein have a wide variety of constructions, other constructions are possible, as will be apparent upon understanding the disclosure of this application.

[0048] Example 1

[0049] The following is combined with Figures 1-7 This application provides a seed crystal chuck, which includes a first fixing part 1, a second fixing part 2, and a fixing hole 3.

[0050] Specifically, in combination Figure 4 As shown, the first fixing part 1 and the second fixing part 2 are sequentially fixedly connected along the first direction 4; combined with Figure 3 As shown, the first direction 4 refers to a vertically downward square, meaning the first fixing part 1 is positioned above the second fixing part 2. Furthermore, the first fixing part 1 and the second fixing part 2 are integrally formed.

[0051] Specifically, the first fixing part 1 has a gradually expanding structure along the first direction 4, and the second fixing part 2 is hemispherical, so that the first fixing part 1 and the second fixing part 2 form a teardrop-like shape. Preferably, the cross-section of the first fixing part 1 is circular, and the diameter of the cross-section of the first fixing part 1 along the first direction 4 increases sequentially. Another preferred embodiment is that the cross-section of the first fixing part 1 is square, and the size of the cross-section of the first fixing part 1 along the first direction 4 increases sequentially, that is, the first fixing part 1 is a frustum structure. It is worth noting that the above are just two examples, and other shapes are also possible, as long as the first fixing part 1 has a gradually expanding structure along the first direction 4.

[0052] Specifically, the fixing hole 3 is used to fix the seed crystal, and the fixing hole 3 passes through the first fixing part 1 and the second fixing part 2 sequentially along the first direction 4. Further, the seed crystal mentioned here refers to a seed crystal with a specific crystal orientation. In actual use, the seed crystal is passed through the top of the first fixing part 1 until a portion of the seed crystal protrudes from the second fixing part 2. The protruding portion of the seed crystal fuses with the molten silicon in the crucible, and the crystal pulling stage begins.

[0053] In the actual crystal pulling process, argon gas is continuously blown in. The purpose of blowing in argon gas is to remove volatiles in the single crystal furnace and to cool the seed crystal and the single crystal being pulled, thereby increasing the temperature gradient and improving the growth rate and stability of the single crystal. Compared with the existing cylindrical seed crystal chuck, the seed crystal chuck of this application has a teardrop-shaped streamline, which reduces the cross-sectional area near the argon gas inlet, reduces the resistance of argon gas, and increases the flow rate and volume of argon gas. This effectively increases the amount of volatiles generated in the thermal field that can be carried away by argon gas. In addition, the increased flow rate of argon gas further increases the temperature gradient in the furnace, accelerates the seed crystal growth rate, improves the single crystal formation rate, and makes the single crystal growth more stable.

[0054] In this embodiment, combined with Figure 3 As shown, the fixing hole 3 includes a first fixing segment 301, a second fixing segment 302, and a third fixing segment 303 that are sequentially connected along the first direction 4; wherein, the first fixing segment 301 is formed in the first fixing part 1, and the second fixing segment 302 and the third fixing segment 303 are formed in the second fixing part 2; wherein, the diameter of the first fixing segment 301 is larger than the diameter of the third fixing segment 303, and the second fixing segment 302 has a tapered structure along the first direction 4.

[0055] Furthermore, the first fixed segment 301 and the third fixed segment are both cylindrical, while the second segment is a frustum.

[0056] Furthermore, the seed crystal gas fixed by the fixing hole 3 has three segments, which are sequentially the first segment, the second segment, and the third segment along the first direction 4; the first segment is adapted to the first fixing segment 301, which means that the first segment and the first fixing segment 301 have the same diameter; the second segment is adapted to the second fixing segment 302, which means that the second segment is also a frustum and has the same size as the second fixing segment 302; the third segment and the third fixing segment 303 are both cylinders with the same diameter, but the length of the third segment is greater than the length of the third fixing segment 303.

[0057] In the actual installation process, the seed crystal is inserted into the fixing hole 3 from above, that is, the third segment extends into the fixing hole 3 from above. The third segment will pass through the first fixing segment 301, the second fixing segment 302 and the third fixing segment 303 in sequence, and finally part of it will pass through the third fixing segment 303. The second segment is located in the second fixing segment 302 and the first segment is located in the first fixing segment 301. Since the second fixing segment 302 and the second segment have a tapered structure along the first direction 4, the second segment will be stuck on the second fixing segment 302, and part of the third segment will pass through the third fixing segment 303. In this way, the risk of the seed crystal falling off can be prevented.

[0058] In this embodiment, a different structural form of the fixing hole 3 from the above-described form is provided, which is described in detail below. The fixing hole 3 includes a first fixing segment 301, a second fixing segment 302, a third fixing segment 303, and a fourth fixing segment that are sequentially connected along the first direction 4; wherein the first fixing segment 301 is formed in the first fixing part 1, and the second fixing segment 302, the third fixing segment 303, and the fourth fixing segment are formed in the second fixing part 2; the diameter of the first fixing segment 301 is equal to the diameter of the second fixing segment 302 and larger than the diameter of the fourth fixing segment, and the third fixing segment 303 has a tapered structure along the first direction 4.

[0059] Furthermore, the third fixed segment 303 is a frustum.

[0060] It is worth noting that in this embodiment, the fixing hole 3 is divided into four fixing segments, with the first fixing segment 301 formed in the first fixing part 1 and the remaining three segments formed in the second fixing part 2. In the previous embodiment, the fixing hole 3 was divided into three fixing segments, with the first fixing segment 301 formed in the first fixing part 1 and the remaining two fixing segments formed in the second fixing part 2. The principles and functions of the two are the same, and will not be elaborated here. In this embodiment, considering the size of the first fixing part 1 and the second fixing part 2, the fixing hole 3 is divided into four fixing segments.

[0061] In this embodiment, combination and Figure 2 As shown, the seed crystal chuck also includes an exhaust hole 5; the exhaust hole 5 is opened in the first fixing part 1 and / or the second fixing part 2; and the exhaust hole 5 is connected to the fixing hole 3 so as to conduct the gas inside the first fixing part 1 and / or the second fixing part 2 to the outside through the exhaust hole 5.

[0062] Preferably, there are multiple exhaust holes 5, and the multiple exhaust holes 5 are arranged at equal intervals along the first direction 4.

[0063] Example 2

[0064] This application also provides a crystal pulling device, including a weight 6 and a seed crystal chuck; the weight 6 is threadedly connected to one end of the first fixing part 1 that is away from the second fixing part 2.

[0065] Specifically, the first fixing part 1 has an internal thread at the end opposite to the second fixing part 2, and the counterweight 6 has an external threaded connecting post at the end facing the seed crystal chuck. The connecting post is inserted into the first fixing part 1 and connected by the thread.

[0066] Furthermore, a through hole 601 is provided along the axis of the counterweight to facilitate the insertion of the tungsten wire rope.

[0067] Furthermore, to further reduce the resistance of argon gas and increase its flow rate and volume, the counterweight 6 is configured with a gradually expanding structure along the first direction 4, making the counterweight 6, the first fixing part 1, and the second fixing part 2 teardrop-shaped. This streamlined teardrop shape significantly reduces the cross-sectional area near the argon gas inlet, thereby reducing the resistance of argon gas and increasing its flow rate and volume. This effectively increases the amount of volatiles carried away by the argon gas within the thermal field. In addition, the increased argon gas flow rate further increases the temperature gradient within the furnace, accelerating the seed crystal growth rate, increasing the single crystal formation rate, and making single crystal growth more stable.

[0068] The following sections simulate the airflow of both the existing seed crystal chuck and the seed crystal chuck provided in this application using Flow Simulation, setting the argon blowing speed to 50 / s, and combining... Figure 6 and Figure 7 As shown, when using an existing seed crystal chuck, the argon gas flow rate below the seed crystal chuck is significantly reduced, while when using the seed crystal chuck of this application, the argon gas flow rate below the seed crystal chuck is significantly increased.

[0069] Example 3

[0070] This application also provides a single crystal furnace, including the aforementioned seed crystal chuck. All the beneficial effects of the aforementioned seed crystal chuck will not be specifically elaborated here.

[0071] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A seed crystal chuck; characterized in that, It includes a first fixing part, a second fixing part, and a fixing hole; The first fixing part and the second fixing part are sequentially fixedly connected along the first direction; the first fixing part has a gradually expanding structure along the first direction, and the second fixing part is hemispherical, so that the first fixing part and the second fixing part form a teardrop-like shape; The fixing hole is used to fix the seed crystal, and the fixing hole passes through the first fixing part and the second fixing part in sequence along the first direction.

2. The seed crystal chuck according to claim 1, characterized in that, The fixing hole includes a first fixing segment, a second fixing segment, and a third fixing segment that are sequentially connected along the first direction; The first fixing segment is formed in the first fixing part, and the second fixing segment and the third fixing segment are formed in the second fixing part; The diameter of the first fixed segment is larger than the diameter of the third fixed segment, and the second fixed segment has a tapered structure along the first direction.

3. The seed crystal chuck according to claim 2, characterized in that, The second fixed segment is a frustum.

4. The seed crystal chuck according to claim 1, characterized in that, The fixing hole includes a first fixing segment, a second fixing segment, a third fixing segment, and a fourth fixing segment that are sequentially connected along the first direction; The first fixing segment is formed in the first fixing part, and the second fixing segment, the third fixing segment, and the fourth fixing segment are formed in the second fixing part; The diameter of the first fixed segment is equal to the diameter of the second fixed segment and is greater than the diameter of the fourth fixed segment, and the third fixed segment has a tapered structure along the first direction.

5. The seed crystal chuck according to claim 4, characterized in that, The third fixed section is a frustum.

6. The seed crystal chuck according to claim 1, characterized in that, The seed crystal chuck also includes an exhaust hole; The vent is located in the first fixing part and / or the second fixing part; and the vent communicates with the fixing hole to allow the gas inside the first fixing part and / or the second fixing part to be conducted to the outside through the vent.

7. The seed crystal chuck according to claim 6, characterized in that, The number of exhaust holes is multiple, and the multiple exhaust holes are arranged at equal intervals along the first direction.

8. A crystal pulling device, characterized in that, Includes a weight and a seed crystal chuck as described in any one of claims 1-7; The weight is threadedly connected to the end of the first fixing part that is opposite to the second fixing part.

9. The crystal pulling equipment according to claim 8, characterized in that, The weight has a gradually expanding structure along the first direction, making the weight, the first fixing part, and the second fixing part teardrop-shaped.

10. A single crystal furnace, characterized in that, Includes the seed crystal chuck as described in any one of claims 1-7.

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