Crosstalk suppression driving circuit
By combining push-pull and negative peak suppression modules, positive and negative voltage spikes in the SiC MOSFET drive circuit are suppressed, solving the problem of signal bridge arm crosstalk in SiC MOSFET bridge topology, reducing design costs and improving circuit safety and reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHONGQING CLOUDCHILD TECH CO LTD
- Filing Date
- 2025-05-07
- Publication Date
- 2026-05-19
AI Technical Summary
Existing SiC MOSFET drive circuits are prone to signal bridge arm crosstalk in bridge topologies, especially positive and negative voltage spikes, which can lead to circuit failure or device breakdown. Furthermore, existing solutions increase circuit costs.
A crosstalk suppression drive circuit combining a push-pull module and a negative peak suppression module is used to suppress positive and negative voltage spikes in the bridge circuit by combining the positive power supply of the push-pull module and the negative peak suppression module, thereby reducing design costs.
It effectively suppresses positive and negative voltage spikes in bridge circuits, reduces design costs, and improves circuit safety and reliability.
Smart Images
Figure CN224264960U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power electronic drive circuit technology, and in particular to a crosstalk suppression drive circuit. Background Technology
[0002] In recent years, silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) have received widespread attention from academia and industry due to their advantages of high voltage withstand and high switching frequency. Although SiC MOSFETs have excellent device characteristics, the design of their driving circuits is very difficult. Specifically, due to the relatively small parasitic capacitance of SiC MOSFETs and their high operating frequency, crosstalk between signal bridge arms is likely to occur when SiC MOSFETs are used in bridge topologies.
[0003] Patent CN106385165A discloses "a SiC MOSFET driving circuit with crosstalk suppression capability". In its main technical solution, negative voltage turn-off is achieved by adding two independent power supplies to the driving circuit, which further reduces the negative voltage spike. However, the technical solution does not mention how to deal with the case where the positive voltage spike is too high, and the use of two independent power supplies increases the circuit cost.
[0004] Patent CN118399725A discloses "a SiC MOSFET crosstalk suppression driving circuit". This solution uses a half-bridge driver chip to output complementary PWM signals and adds a crosstalk suppression circuit to the gate of the SiC MOSFET. While the half-bridge driver chip drives the SiC MOSFET, it also drives the corresponding crosstalk suppression circuit to achieve crosstalk suppression. However, this technical solution can achieve crosstalk suppression for normal complementary upper and lower bridge circuits, but in other cases, such as when the driver circuit is not working or when there is surge current flowing through other areas, the crosstalk suppression circuit will not work, and the crosstalk signal may cause the device to break down. At the same time, this solution not only uses two power supplies, but also uses a half-bridge driver chip, which increases the overall circuit cost.
[0005] In summary, the two existing solutions are as follows: the traditional solution to SiC MOSFET crosstalk problem is to use an active Miller clamp circuit. The working principle of this circuit is to add a Miller clamp circuit between the gate and source of the SiC MOSFET. When the voltage interference detected on the device gate is greater than a set threshold, the switch in the clamp circuit is turned on, and the displacement current is introduced into the discharge circuit to eliminate crosstalk. This method is currently widely used, but the design of active clamp circuits is often very complex, which increases the design cost. Utility Model Content
[0006] In view of this, the purpose of this application is to provide at least one crosstalk suppression driving circuit, which, through the combination of a push-pull module and a negative peak suppression module, suppresses positive voltage spikes and negative voltage spikes in the crosstalk phenomenon generated by the bridge circuit, thereby reducing design costs.
[0007] This application mainly includes the following aspects:
[0008] In a first aspect, embodiments of this application provide a crosstalk suppression driving circuit, which includes a push-pull module and a negative peak suppression module. The positive power input terminal of the push-pull module is connected to a positive input power supply, the negative power input terminal of the push-pull module is connected to both the negative input power supply and the first connection terminal of the negative peak suppression module, the control signal input terminal of the push-pull module is connected to a corresponding pulse width modulation signal, the output terminal of the push-pull module is connected to the gate of a corresponding silicon carbide driving switch and the second connection terminal of the negative peak suppression module, the silicon carbide driving switch is either an upper bridge driving switch or a lower bridge driving switch in a bridge driving structure, and the third connection terminal of the negative peak suppression module is connected to the source of the silicon carbide driving switch.
[0009] In one possible implementation, the push-pull module includes a first control switch, a second control switch, and a first current-limiting resistor. The first connection terminal of the first control switch is connected to a first positive input power supply. The second connection terminal of the first control switch is connected to the second connection terminal of the second control switch, the gate of the silicon carbide drive switch, and the second connection terminal of the negative peak suppression module. After the control terminal of the first control switch is connected to the control terminal of the second control switch, the pulse width modulation signal corresponding to the silicon carbide drive switch is connected through the first current-limiting resistor. The first connection terminal of the second control switch is connected to the first negative input power supply.
[0010] In one possible implementation, the negative peak suppression module includes a diode, a transistor, and a second current-limiting resistor. The base of the transistor is connected to the negative input power supply through the second current-limiting resistor, the collector of the transistor is connected to the anode of the diode, the cathode of the diode is connected to the output terminal of the push-pull module and the gate of the silicon carbide drive switch, and the emitter of the transistor is connected to the source of the silicon carbide drive switch.
[0011] In one possible implementation, the crosstalk suppression driving circuit further includes a power supply module, wherein the input terminal of the power supply module is connected to a second given power supply, the ground terminal of the power supply module is connected to the power supply ground, the positive voltage output terminal of the power supply module outputs a positive input power supply, and the negative voltage output terminal of the power supply module outputs a negative input power supply.
[0012] In one possible implementation, the crosstalk suppression drive circuit further includes a filter and voltage regulator module, wherein the filter and voltage regulator module is connected in parallel between the input terminal and the ground terminal of the power supply module.
[0013] In one possible implementation, the crosstalk suppression driving circuit further includes a driving resistor module, wherein the first connection terminal of the driving resistor module is connected to the output terminal of the push-pull module, and the second connection terminal of the driving resistor module is connected to the gate of the silicon carbide driving switch and the second connection terminal of the negative peak suppression module, respectively.
[0014] In one possible implementation, the crosstalk suppression drive circuit further includes an overvoltage protection module, wherein the overvoltage protection module is connected in parallel between the gate and source of the silicon carbide drive switch.
[0015] In one possible implementation, the crosstalk suppression drive circuit further includes a high-frequency noise filtering capacitor, wherein the high-frequency noise filtering capacitor is connected in parallel between the gate and source of the silicon carbide drive switch.
[0016] In one possible implementation, the crosstalk suppression drive circuit further includes a bleed resistor connected in parallel between the gate and source of the silicon carbide drive switch.
[0017] In one possible implementation, the crosstalk suppression drive circuit further includes an anti-oscillation resistor, wherein one end of the anti-oscillation resistor is connected to the power supply ground, and the other end of the anti-oscillation resistor is connected to the source of the lower bridge drive switch.
[0018] This application provides a crosstalk suppression driving circuit, which includes a push-pull module and a negative peak suppression module. The positive power input terminal of the push-pull module is connected to a positive input power supply. The negative power input terminal of the push-pull module is connected to both the negative input power supply and the first connection terminal of the negative peak suppression module. The control signal input terminal of the push-pull module is connected to a corresponding pulse width modulation signal. The output terminal of the push-pull module is connected to the gate of a corresponding silicon carbide (SiC) drive switch and the second connection terminal of the negative peak suppression module. The SiC drive switch is either the upper or lower bridge drive switch in a bridge drive structure. The third connection terminal of the negative peak suppression module is connected to the source of the SiC drive switch. By combining the push-pull module and the negative peak suppression module, the positive and negative voltage spikes in the crosstalk phenomenon generated by the bridge circuit are suppressed, reducing design costs.
[0019] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description
[0020] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0021] Figure 1 This illustration shows one of the structural schematic diagrams of a crosstalk suppression driving circuit provided in an embodiment of this application;
[0022] Figure 2 This is a second schematic diagram of a crosstalk suppression driving circuit provided in an embodiment of this application;
[0023] Figure 3 A schematic diagram of a crosstalk suppression driving circuit corresponding to a bridge driving structure provided in an embodiment of this application is shown. Detailed Implementation
[0024] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the drawings in this application are for illustrative and descriptive purposes only and are not intended to limit the scope of protection of this application. Furthermore, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this application illustrate operations implemented according to some embodiments of this application. It should be understood that the operations in the flowcharts may not be implemented in sequence, and steps without logical contextual relationships may be reversed or implemented simultaneously. In addition, those skilled in the art, guided by the content of this application, may add one or more other operations to the flowcharts, or remove one or more operations from the flowcharts.
[0025] Furthermore, the described embodiments are merely some, not all, of the embodiments of this application. The components of the embodiments of this application described and illustrated herein can typically be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0026] Due to the rapid development of silicon carbide (SiC) devices, which have advantages such as high operating temperature, high blocking voltage, high operating frequency, and low conduction loss, they are widely used in high-voltage, high-temperature, high-efficiency, and high-power-density applications. Among them, silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) have attracted widespread attention from academia and industry due to their high withstand voltage and high switching frequency. Although SiC MOSFETs have excellent device characteristics, the design of their drive circuits is very difficult. Specifically, because SiC MOSFETs have relatively small parasitic capacitance and high operating frequency, crosstalk between signal bridge arms is prone to occur when SiC MOSFETs are used in bridge topologies.
[0027] Specifically, bridge arm crosstalk can be divided into two cases: First, when the upper transistor is turned on, a positive voltage spike will be generated at the gate and source ends of the lower transistor, which may cause the lower transistor to be mis-turned on, leading to circuit failure. Second, when the upper transistor is turned off, a negative voltage spike will be generated at the gate and source ends of the lower transistor, which may exceed the safety threshold and cause the lower transistor to break down.
[0028] Based on this, this application provides a crosstalk suppression driving circuit. This circuit suppresses both positive and negative voltage spikes in the crosstalk phenomenon generated by the bridge circuit, reducing design costs. Specifically, as follows:
[0029] Please see Figure 1 , Figure 1 This illustration shows one of the structural schematic diagrams of a crosstalk suppression driving circuit provided in an embodiment of this application. For example... Figure 1 As shown, the crosstalk suppression driving circuit provided in this application embodiment includes a push-pull module 1 and a negative peak suppression module 2.
[0030] In this module, the positive power input terminal of the push-pull module 1 is connected to the positive input power supply VCC1, the negative power input terminal of the push-pull module 1 is connected to the negative input power supply VCC2 and the first connection terminal of the negative peak suppression module 2, the control signal input terminal of the push-pull module 1 is connected to the corresponding pulse width modulation signal PWM, the output terminal of the push-pull module 1 is connected to the gate of the silicon carbide drive switch Q and the second connection terminal of the negative peak suppression module 2, the silicon carbide drive switch Q is the upper bridge drive switch or the lower bridge drive switch in the bridge drive structure, and the third connection terminal of the negative peak suppression module 2 is connected to the source of the silicon carbide drive switch Q.
[0031] In one specific embodiment, if the silicon carbide drive switch Q is the upper bridge drive switch in the bridge drive structure, then the drain of the silicon carbide drive switch Q is connected to the first given power supply VCC3; if the silicon carbide drive switch Q is the lower bridge drive switch in the bridge drive structure, then the drain of the silicon carbide drive switch Q is connected to the source of the upper bridge drive switch in its bridge arm.
[0032] In a preferred embodiment, please refer to Figure 2 , Figure 2 This is a second schematic diagram of a crosstalk suppression driving circuit provided in an embodiment of this application. (See attached diagram.) Figure 2As shown, the push-pull module 1 includes a first control switch K1, a second control switch K2, and a first current-limiting resistor R1. The first connection terminal of the first control switch K1 is connected to the first positive input power supply VCC1. The second connection terminal of the first control switch K1 is connected to the second connection terminal of the second control switch K2, the gate of the silicon carbide drive switch Q, and the second connection terminal of the negative peak suppression module 2. After the control terminal of the first control switch K1 is connected to the control terminal of the second control switch K2, the pulse width modulation signal PWM corresponding to the silicon carbide drive switch is connected through the first current-limiting resistor R1. The first connection terminal of the second control switch K2 is connected to the first negative input power supply VCC2.
[0033] In a preferred embodiment, such as Figure 2 As shown, the negative peak suppression module 2 includes a diode D1, a transistor J, and a second current-limiting resistor R2. The crosstalk suppression driving circuit also includes a driving resistor module 3.
[0034] In this configuration, the base of transistor J is connected to the negative input power supply VCC2 through the second current-limiting resistor R2, the collector of transistor J is connected to the anode of diode D1, the cathode of diode D1 is connected to the gate of silicon carbide drive switch Q and the emitter of the first control switch K1 and the emitter of the second control switch K2 through the drive resistor module 3, and the emitter of transistor J is connected to the source of silicon carbide drive switch Q.
[0035] The negative peak suppression module 2 eliminates the negative voltage at the gate of the silicon carbide driven switch Q.
[0036] In a preferred embodiment, such as Figure 2 As shown, the crosstalk suppression driving circuit also includes a power supply module 4, wherein the input terminal +VIN of the power supply module 4 is connected to the second given power supply VCC4, the ground terminal GND of the power supply module 4 is connected to the power supply ground, the positive voltage output terminal +Vout of the power supply module 4 outputs the positive input power supply VCC1, and the negative voltage output terminal -Vout of the power supply module 4 outputs the negative input power supply VCC2.
[0037] Preferably, the power module 4 serves as a voltage regulator while supplying power to the push-pull module 1. The positive input power supply VCC1 output from the positive voltage output terminal +Vout of the power module 4 has a corresponding range of 10V to 18V. Specifically, the positive input power supply VCC1 can be selected as +15V. The negative input power supply VCC2 output from the negative voltage output terminal -Vout of the power module 4 has a corresponding range of 0V to -5V. In this application, the negative input power supply VCC2 = -5V, and the second given power supply VCC4 is +18V.
[0038] In another preferred embodiment, the crosstalk suppression driving circuit further includes a filter and voltage regulation module, wherein the filter and voltage regulation module is connected in parallel between the input terminal +VIN and the ground terminal GND of the power supply module 4. In this application, the filter and voltage regulation module is selected from the first capacitor C1.
[0039] In one specific embodiment, the first connection terminal of the driving resistor module 3 is connected to the emitter of the first control switch K1 in the push-pull module 1, and the second connection terminal of the driving resistor module 3 is connected to the gate of the silicon carbide driving switch Q and the second connection terminal of the negative peak suppression module 2 (i.e., the cathode of the diode D1).
[0040] In a preferred embodiment, the driving resistor module 3 includes a first driving resistor RG1, a second driving resistor RG2, and a diode D2. One end of the first driving resistor RG1 is connected to one end of the second driving resistor RG2 and the emitter of the first control switch K1. The other end of the second driving resistor RG2 is connected to the cathode of the diode D2. The anode of the diode D2 is connected to the other end of the first driving resistor RG1, the cathode of the diode D1, and the gate of the silicon carbide driving switch Q.
[0041] Specifically, the first driving resistor RG1 is the turn-on resistor corresponding to the silicon carbide driving switch Q, the turn-off resistor of the silicon carbide driving switch Q is the resistance value of the first driving resistor RG1 and the second driving resistor RG2 connected in parallel, and the diode D2 is used to realize the fast turn-off of the silicon carbide driving switch Q.
[0042] In a preferred embodiment, the crosstalk suppression driving circuit further includes an overvoltage protection module, wherein the overvoltage protection module is connected in parallel between the gate and source of the silicon carbide driving switch, such as... Figure 2 In the illustrated embodiment, the overvoltage protection module is implemented by a first Zener diode TVS1 and a second Zener diode TVS2 connected in reverse polarity. The cathode of the first Zener diode TVS1 is connected to the gate of the silicon carbide drive switch, the anode of the first Zener diode TVS1 is connected to the anode of the second Zener diode TVS2, and the cathode of the second Zener diode TVS2 is connected to the source of the silicon carbide drive switch.
[0043] Specifically, the gate oxide layer of the silicon carbide drive switch Q is relatively fragile, and its withstand voltage is generally lower than that of the silicon drive switch. Therefore, overvoltage protection is very important. The Zener diode TVS conducts when the voltage exceeds the drive voltage of the silicon carbide drive switch Q, clamping the voltage and protecting the gate of the silicon carbide drive switch Q.
[0044] In a preferred embodiment, the crosstalk suppression driving circuit further includes a high-frequency noise filtering capacitor C2 and a bleeder resistor R3, which are connected in parallel between the gate and source of the silicon carbide driving switch Q.
[0045] Specifically, the high-frequency noise filtering capacitor C2 is used to filter out high-frequency noise and prevent false triggering of the silicon carbide drive switch Q. At the same time, it forms an RC low-pass filter with the first drive resistor RG1 to reduce the impact of oscillation and suppress the risk of parasitic conduction of the silicon carbide drive switch Q.
[0046] The bleeder resistor R3 is typically used to provide a discharge path to prevent charge accumulation from causing the gate voltage of the silicon carbide drive switch Q to drift, especially in high-temperature environments, or to ensure that the silicon carbide drive switch Q is reliably turned off when the drive of the silicon carbide drive switch Q is disconnected.
[0047] In this application, the crosstalk suppression driving circuit corresponding to the lower bridge drive switch also includes an anti-oscillation resistor. One end of the anti-oscillation resistor is connected to the power supply ground, and the other end of the anti-oscillation resistor is connected to the source of the lower bridge drive switch.
[0048] The anti-oscillation resistor is 0Ω to prevent crosstalk suppression and mutual oscillation between the drive circuit and the silicon carbide drive switch.
[0049] The crosstalk suppression drive circuit provided in this application is applied to a single SiC MOSFET (silicon carbide drive switch) in a bridge structure.
[0050] like Figure 2 As shown, power module 4 supplies power to push-pull module 1. When the pulse width modulation signal PWM is high, the first control switch K1 is turned on and the second control switch K2 is turned off. At this time, the positive input power supply VCC2 output by the power module supplies power to the gate of the silicon carbide drive switch Q, realizing the successful driving of the silicon carbide drive switch Q. When the pulse width modulation signal PWM is low, the first control switch K1 is turned off and the second control switch K2 is turned on. Since the gate voltage of the silicon carbide drive switch Q has not been discharged at this time, the voltage that the silicon carbide drive switch Q has not had time to discharge is discharged through the discharge resistor R3. And the conduction of the second control switch K2 enables the gate of the silicon carbide drive switch Q to quickly achieve negative voltage turn-off under the action of the negative input power supply VCC3.
[0051] Please see Figure 3 , Figure 3 This illustration shows a schematic diagram of a crosstalk suppression driving circuit corresponding to a bridge-type driving structure provided in an embodiment of this application. Figure 3 As shown, the bridge drive structure is a bridge arm, including an upper bridge drive switch Q1 and a lower bridge drive switch Q2 connected in series. The drain of the upper bridge drive switch Q1 is connected to the first given power supply VCC1 through a third diode D3. Specifically, the anode of the third diode D3 is connected to the first given power supply VCC1, and the cathode of the third diode D3 is connected to the drain of the upper bridge drive switch Q1. The source of the upper bridge drive switch Q1 is connected to the drain of the lower bridge drive switch Q2 through a load inductor L, and the source of the lower bridge drive switch Q2 is connected to the power supply ground.
[0052] In one specific embodiment, the crosstalk suppression driving circuit corresponding to the upper bridge drive switch Q1 includes a first capacitor C1. H The following components are included: power module 4H, first control switch K1H, second control switch K2H, first current limiting resistor R1H, first pulse width modulation signal PWMH, diode D1H, transistor JH, second current limiting resistor R2H, first drive resistor RG1H, second drive resistor RG2H, diode D2H, first Zener diode TVS1H, second Zener diode TVS2H, high-frequency noise filtering capacitor C2H, and bleeder resistor R3H.
[0053] In another specific embodiment, the crosstalk suppression driving circuit corresponding to the lower bridge drive switch Q2 includes a first capacitor C1. L The system includes a power module 4L, a first control switch K1L, a second control switch K2L, a first current-limiting resistor R1L, a second pulse width modulation signal PWML, a diode D1L, a transistor JL, a second current-limiting resistor R2L, a first drive resistor RG1L, a second drive resistor RG2L, a diode D2L, a first Zener diode TVS1L, a second Zener diode TVS2L, a high-frequency noise filtering capacitor C2L, and a bleeder resistor R3L.
[0054] The connection methods of each component in the crosstalk suppression drive circuit corresponding to the upper bridge drive switch Q1 and the crosstalk suppression drive circuit corresponding to the lower bridge drive switch Q2 are the same as those described above, and will not be repeated here.
[0055] like Figure 3 As shown, the crosstalk suppression drive circuit corresponding to the lower bridge drive switch Q2 also includes an anti-oscillation resistor R0. One end of the anti-oscillation resistor R0 is connected to the power supply ground, and the other end of the anti-oscillation resistor R0 is connected to the source of the lower bridge drive switch Q2.
[0056] In another preferred embodiment, the crosstalk suppression driving circuit corresponding to the upper bridge drive switch Q1 and the crosstalk suppression driving circuit corresponding to the lower bridge drive switch Q2 can share the same power supply module. In this case, the input terminal of the power supply module is connected to the second given power supply, the ground terminal of the power supply module is connected to the power supply ground, the positive voltage output terminal of the power supply module is connected to the collector of the first control switch K1H in the crosstalk suppression driving circuit corresponding to the upper bridge drive switch Q1 and the collector of the first control switch K1L in the crosstalk suppression driving circuit corresponding to the lower bridge drive switch Q2, respectively, and the negative voltage output terminal of the power supply module is connected to the collector of the second control switch K2H in the crosstalk suppression driving circuit corresponding to the upper bridge drive switch Q1 and the collector of the second control switch K2L in the crosstalk suppression driving circuit corresponding to the lower bridge drive switch Q2, respectively.
[0057] The first pulse width modulation signal PWMH and the second pulse width modulation signal PWML are complementary.
[0058] like Figure 3 As shown, taking the lower bridge drive switch Q2 as an example, on the one hand, for the positive crosstalk voltage generated on the bridge drive switch Q2, when the upper bridge drive switch Q1 is turned on and the lower bridge drive switch Q2 is turned off, the parasitic capacitance corresponding to the upper bridge drive switch Q1 will generate a positive crosstalk voltage on the gate of the lower bridge drive switch Q2. At this time, the lower bridge drive switch Q2 is in the off state, that is, the second control switch K2L corresponding to the lower bridge drive switch Q2 is in the on state. At this time, the positive crosstalk voltage generated by the upper bridge drive switch Q1 on the gate of the lower bridge drive switch Q2 is connected to the negative voltage output terminal -VOUT of the power supply module corresponding to the lower bridge drive switch Q2, thereby eliminating the positive crosstalk voltage generated by the upper bridge drive switch Q1 on the lower bridge drive switch Q2.
[0059] On the other hand, when the source voltage of the lower bridge drive switch Q2 fluctuates significantly, and the negative voltage output terminal -VOUT of the power module is greater than the source voltage of the lower bridge drive switch Q2 (greater than 0.7V), that is, when the source voltage of the lower bridge drive switch Q2 is -5.7V, a negative crosstalk voltage is generated on the lower bridge drive switch Q2. At this time, the transistor JL quickly turns on, and the diode D1L turns on immediately. The voltage drop of the diode D1L is used to clamp the source voltage of the lower bridge drive switch Q2 (the specific clamping value depends on the saturation voltage drop of the transistor JL and the forward voltage drop of the diode D1L), ensuring that the gate-source voltage corresponding to the lower bridge drive switch Q2 does not exceed the limit.
[0060] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems and devices described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division; in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the displayed or discussed mutual coupling or direct coupling or communication connection may be through some communication interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.
[0061] The advantages of this application are:
[0062] Compared with known technologies, it uses cheaper components, is simpler to design, easier to maintain, and employs multiple protections against crosstalk, which can suppress both positive and negative crosstalk, making it safer and more reliable.
[0063] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A crosstalk suppression driving circuit, characterized in that, The crosstalk suppression driving circuit includes a push-pull module and a negative peak cancellation module. The push-pull module's positive power input terminal is connected to the positive input power supply, its negative power input terminal is connected to both the negative input power supply and the first connection terminal of the negative peak suppression module, its control signal input terminal is connected to the corresponding pulse width modulation signal, its output terminal is connected to the gate of the corresponding silicon carbide drive switch and the second connection terminal of the negative peak suppression module, the silicon carbide drive switch is either the upper bridge drive switch or the lower bridge drive switch in a bridge drive structure, and the third connection terminal of the negative peak suppression module is connected to the source of the silicon carbide drive switch.
2. The crosstalk suppression driving circuit according to claim 1, characterized in that, The push-pull module includes a first control switch, a second control switch, and a first current-limiting resistor. The first connection terminal of the first control switch is connected to the first positive input power supply. The second connection terminal of the first control switch is connected to the second connection terminal of the second control switch, the gate of the silicon carbide drive switch, and the second connection terminal of the negative peak suppression module. After the control terminal of the first control switch is connected to the control terminal of the second control switch, the pulse width modulation signal corresponding to the silicon carbide drive switch is connected through the first current limiting resistor. The first connection terminal of the second control switch is connected to the first negative input power supply.
3. The crosstalk suppression driving circuit according to claim 1, characterized in that, The negative peak suppression module includes diodes, transistors, and a second current-limiting resistor. In this configuration, the base of the transistor is connected to the negative input power supply through the second current-limiting resistor, the collector of the transistor is connected to the anode of the diode, the cathode of the diode is connected to the output terminal of the push-pull module and the gate of the silicon carbide drive switch, and the emitter of the transistor is connected to the source of the silicon carbide drive switch.
4. The crosstalk suppression driving circuit according to claim 1, characterized in that, The crosstalk suppression driving circuit also includes a power supply module. The power module's input terminal is connected to a second given power source, its ground terminal is connected to the power source ground, its positive voltage output terminal outputs positive input power, and its negative voltage output terminal outputs negative input power.
5. The crosstalk suppression driving circuit according to claim 4, characterized in that, The crosstalk suppression driving circuit also includes a filtering and voltage regulation module. The filter and voltage regulator module is connected in parallel between the input terminal and the ground terminal of the power supply module.
6. The crosstalk suppression driving circuit according to claim 1, characterized in that, The crosstalk suppression driving circuit also includes a driving resistor module. The first connection terminal of the driving resistor module is connected to the output terminal of the push-pull module, and the second connection terminal of the driving resistor module is connected to the gate of the silicon carbide driving switch and the second connection terminal of the negative peak suppression module, respectively.
7. The crosstalk suppression driving circuit according to claim 1, characterized in that, The crosstalk suppression driving circuit also includes an overvoltage protection module. The overvoltage protection module is connected in parallel between the gate and source of the silicon carbide drive switch.
8. The crosstalk suppression driving circuit according to claim 1, characterized in that, The crosstalk suppression drive circuit also includes a high-frequency noise filtering capacitor. Among them, the high-frequency noise filtering capacitor is connected in parallel between the gate and source of the silicon carbide drive switch.
9. The crosstalk suppression driving circuit according to claim 1, characterized in that, The crosstalk suppression drive circuit also includes a bleed resistor. A bleed resistor is connected in parallel between the gate and source of the silicon carbide drive switch.
10. The crosstalk suppression driving circuit according to any one of claims 1-9, characterized in that, The crosstalk suppression drive circuit also includes an anti-oscillation resistor. One end of the anti-oscillation resistor is connected to the power supply ground, and the other end of the anti-oscillation resistor is connected to the source of the lower bridge drive switch.