Ion screen structure and semiconductor processing equipment

Abstract

According to the ion screen structure and the semiconductor processing equipment, in the ion screen structure, a first through hole and a second through hole are formed in the center area and the edge area of a first screen layer respectively; third through holes and fourth through holes which are in one-to-one correspondence with the first through holes and the second through holes are formed in the center area and the edge area of the second screen layer respectively, and the first screen layer and the second screen layer are driven by the rotation driving mechanism to rotate relatively; the first air holes and the corresponding third air holes have a first contact ratio, and the second air holes and the corresponding fourth air holes have a second contact ratio, so that the distribution requirements of plasmas in the process chamber under different process conditions can be met; and therefore, different requirements of the wafer to be etched on the etching rates of the central region and the edge region under different process conditions can be met.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to an ion screen structure and semiconductor processing equipment. Background Technology

[0002] Etching plays a crucial role in semiconductor manufacturing, and it is typically accomplished through a combination of chemical and physical processes.

[0003] For etching processes involving purely chemical actions, a remote plasma generation method is typically employed. Specifically, plasma is first generated in a chamber, then travels a distance to the process chamber to undergo the chemical reaction. During its journey, the plasma eliminates charged particles and its distribution within the process chamber is influenced by an ion-screen structure.

[0004] The structure of the ion screen has a significant impact on the distribution of plasma within the process chamber. Therefore, how to adjust the distribution of plasma within the process chamber through the ion screen structure has become an urgent technical problem to be solved. Utility Model Content

[0005] The problem solved by this utility model embodiment is to provide an ion screen structure and semiconductor processing equipment that can meet the plasma distribution requirements in the process chamber under different process conditions, thereby helping to meet the different etching rate requirements of the wafer to be etched for the central and edge regions under different process conditions.

[0006] To address the above problems, this utility model provides an ion sieve structure, comprising:

[0007] The first screen layer includes a first through hole and a second through hole, wherein the first through hole is located in the central region of the first screen layer and the second through hole is located in the edge region of the first screen layer.

[0008] The second screen layer is stacked perpendicularly to the first screen layer and includes a third through hole and a fourth through hole. The third through hole is located in the central region of the second screen layer and is arranged in a one-to-one correspondence with the first through hole. The fourth through hole is located in the edge region of the second screen layer and is arranged in a one-to-one correspondence with the second through hole.

[0009] A rotary drive mechanism is used to drive the first screen layer and the second screen layer to rotate relative to each other, so that the first through hole and the corresponding third through hole have a first degree of overlap, and the second through hole and the corresponding fourth through hole have a second degree of overlap.

[0010] Optionally, the first screen layer includes an engaging portion;

[0011] The rotary drive mechanism includes: a drive motor; and a transmission gear, which is fixedly connected to the output shaft of the drive motor and coaxially engaged with it, and engages with the meshing part of the first screen layer to drive the first screen layer to rotate.

[0012] Optionally, the rotary drive mechanism further includes a reduction mechanism, the input end of which is connected to the output end of the drive motor, and the output end of which is used to drive the transmission gear to rotate.

[0013] Optionally, the rotary drive mechanism further includes a position encoder disposed on the input shaft of the drive motor, used to obtain the rotation angle of the first screen layer by detecting the rotation angle of the drive motor.

[0014] Optionally, the ion sieve structure further includes:

[0015] A sliding limiting groove is provided on the surface of the first screen layer facing the second screen layer and extends circumferentially.

[0016] At least three sliding limit blocks, one end of each of the at least three sliding limit blocks is fixedly connected to the surface of the second screen layer facing the first screen layer and distributed circumferentially, and the other end of each sliding limit block is slidably engaged with the sliding limit groove.

[0017] Optionally, the first screen layer rotates around a preset rotation axis at an angle of 0 to 10 degrees.

[0018] Optionally, the cross-sections of the first through hole, the second through hole, the third through hole, and the fourth through hole are all circular.

[0019] Optionally, the diameters of the first through hole, the second through hole, the third through hole, and the fourth through hole are 3 to 10 mm, respectively.

[0020] Accordingly, this utility model embodiment also provides a semiconductor processing apparatus, including an ion screen structure as described in any of the above claims.

[0021] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0022] The ion screen structure provided in this embodiment of the present invention includes: a first screen layer, including a first through hole and a second through hole, wherein the first through hole is located in the central region of the first screen layer and the second through hole is located in the edge region of the first screen layer; a second screen layer, stacked perpendicularly to the first screen layer, and including a third through hole and a fourth through hole, wherein the third through hole is located in the central region of the second screen layer and is correspondingly arranged with the first through hole, and the fourth through hole is located in the edge region of the second screen layer and is correspondingly arranged with the second through hole; and a rotation drive mechanism for driving the first screen layer and the second screen layer to rotate relative to each other, such that the first through hole and the corresponding third through hole have a first degree of overlap, and the second through hole and the corresponding fourth through hole have a second degree of overlap.

[0023] In the ion screen structure provided in this embodiment of the present invention, the central region and the edge region of the first screen layer are respectively provided with a first through hole and a second through hole, and the central region and the edge region of the second screen layer are respectively provided with a third through hole and a fourth through hole corresponding to the first through hole and the second through hole. The first screen layer and the second screen layer are driven to rotate relative to each other by the rotation driving mechanism, so that the first pore and the corresponding third pore have a first degree of overlap, and the second pore and the corresponding fourth pore have a second degree of overlap. This can meet the plasma distribution requirements in the process chamber under different process conditions, and thus help to meet the different etching rate requirements of the wafer to be etched for the central region and the edge region under different process conditions. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of an embodiment of the ion screen structure provided by the present utility model.

[0025] Figure 2 This is a schematic diagram of an embodiment of the first screen layer in the ion screen structure provided by the present utility model.

[0026] Figure 3 This is a schematic diagram of an embodiment of the second screen layer in the ion screen structure provided by this utility model. Detailed Implementation

[0027] As can be seen from the background technology, it is impossible to meet the distribution requirements of plasma in the process chamber under different process conditions, and thus it is impossible to meet the different etching rate requirements of the wafer to be etched for the central and edge regions under different process conditions.

[0028] To solve the above-mentioned technical problems, the ion screen structure provided in this utility model embodiment includes: a first screen layer, including a first through hole and a second through hole, wherein the first through hole is located in the central region of the first screen layer and the second through hole is located in the edge region of the first screen layer; a second screen layer, stacked perpendicularly to the first screen layer, and including a third through hole and a fourth through hole, wherein the third through hole is located in the central region of the second screen layer and is correspondingly arranged with the first through hole, and the fourth through hole is located in the edge region of the second screen layer and is correspondingly arranged with the second through hole; and a rotation driving mechanism for driving the first screen layer and the second screen layer to rotate relative to each other, such that the first through hole and the corresponding third through hole have a first degree of overlap, and the second through hole and the corresponding fourth through hole have a second degree of overlap.

[0029] In the ion screen structure provided in this embodiment of the present invention, the central region and the edge region of the first screen layer are respectively provided with a first through hole and a second through hole, and the central region and the edge region of the second screen layer are respectively provided with a third through hole and a fourth through hole corresponding to the first through hole and the second through hole. The first screen layer and the second screen layer are driven to rotate relative to each other by the rotation driving mechanism, so that the first pore and the corresponding third pore have a first degree of overlap, and the second pore and the corresponding fourth pore have a second degree of overlap. This can meet the plasma distribution requirements in the process chamber under different process conditions, and thus help to meet the different etching rate requirements of the wafer to be etched for the central region and the edge region under different process conditions.

[0030] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0031] Figures 1 to 3 This is a schematic diagram of an embodiment of the ion screen structure provided by this utility model.

[0032] Reference Figures 1 to 3This utility model provides an ion screen structure, comprising: a first screen layer 10, including a first through hole 110 and a second through hole 120, wherein the first through hole 110 is located in the central region (not shown) of the first screen layer 10, and the second through hole 120 is located in the edge region (not shown) of the first screen layer 10; and a second screen layer 20, stacked perpendicularly to the first screen layer 10, and including a third through hole 210 and a fourth through hole 220, wherein the third through hole 210 is located in the central region of the second screen layer 20. And (not shown) are arranged one-to-one with the first through hole 110, the fourth through hole 220 is located in the edge region of the second screen layer 20 (not shown) and is arranged one-to-one with the second through hole 120; the rotation drive mechanism 30 is used to drive the first screen layer 10 and the second screen layer 20 to rotate relative to each other, so that the first through hole 110 and the corresponding third through hole 210 have a first degree of overlap, and the second through hole 120 and the corresponding fourth through hole 220 have a second degree of overlap.

[0033] The ion screen structure provided by this invention is used to control the distribution of plasma on the surface of a wafer to be etched (not shown), thereby meeting the diverse requirements of the wafer to be etched for the etching rate of the central and edge regions under different process conditions.

[0034] Specifically, the first through hole 110 located in the central region of the first screen layer 10 is correspondingly arranged with the third through hole 210 located in the central region of the second screen layer 20 to form a first plasma channel in the process chamber. The first screen layer 10 and the second screen layer 20 are driven to rotate relative to each other by the rotation drive mechanism 30, so that the first through hole 110 and the second through hole 210 have different first overlap, thereby changing the plasma flow rate of the first plasma channel and realizing the distribution control of plasma in the central region of the wafer surface to be etched.

[0035] Similarly, the second through hole 120 located in the edge region of the first screen layer 10 is correspondingly arranged with the fourth through hole 220 located in the edge region of the second screen layer 20 to form a second plasma channel in the process chamber. By driving the first screen layer 10 and the second screen layer 20 to rotate relative to each other through the rotation drive mechanism 30, the second through hole 120 and the fourth through hole 220 can have different second overlap, thereby changing the plasma flow rate of the second plasma channel and realizing the distribution control of plasma in the edge region of the wafer surface to be etched.

[0036] Depending on different process requirements, the first degree of overlap and the second degree of overlap may be the same or different. In an exemplary embodiment, when the rotary drive mechanism 30 drives the first screen layer 10 and the second screen layer 20 to rotate relative to each other around a preset rotation axis, the first through hole 110 and the corresponding third through hole 210 gradually transition from a completely overlapping state to a completely non-overlapping state, while the second through hole 120 and the corresponding fourth through hole 220 gradually transition from a completely non-overlapping state to a completely overlapping state.

[0037] Thus, by driving the first screen layer 10 and the second screen layer 20 to rotate relative to each other around a preset rotation axis by a preset angle through the rotary drive mechanism 30, different flow distributions of plasma in the central and edge regions of the wafer surface to be etched can be achieved, thereby meeting the diverse requirements of the wafer to be etched for the etching rate in the central and edge regions under different process conditions.

[0038] like Figures 1 to 3 As shown, the first through hole 110, the second through hole 120, the third through hole 210 and the fourth through hole 220 are all circular holes, but this disclosure is not limited to this. The first screen layer 10 and the second screen layer 20 may include any number and shape of through holes as shown.

[0039] The diameters of the first through hole 110, the second through hole 120, the third through hole 210, and the fourth through hole 220 can be set according to the specific requirements of the plasma etching process. As an example, the diameters of the first through hole 110, the second through hole 120, the third through hole 210, and the fourth through hole 220 are 3 to 10 mm, respectively.

[0040] In an exemplary embodiment, the first screen layer 10 is disposed above the second screen layer 20 and stacked vertically with the second screen layer 20, and the first screen layer 10 is rotatable about a preset rotation axis, while the second screen layer 20 is fixed in position, thereby enabling the first screen layer 10 and the second screen layer 20 to rotate relative to each other.

[0041] Specifically, the ion screen structure further includes a sliding limiting groove 140 disposed on the surface of the first screen layer 10 facing the second screen layer 20 and extending circumferentially, and at least three sliding limiting blocks 240. One end of each of the at least three sliding limiting blocks 240 is fixedly connected to the surface of the second screen layer 20 facing the first screen layer 10 and distributed circumferentially, while the other end of each sliding limiting block is slidably engaged with the sliding limiting groove 140.

[0042] In one exemplary embodiment, one end of the at least three sliding limit blocks 240 is bolted together to achieve a fixed connection with the surface of the second screen layer 20 facing the first screen layer 10.

[0043] In an exemplary embodiment, the first screen layer 10 and the second screen layer 20 are respectively made of corrosion-resistant materials, such as aluminum and stainless steel, to adapt to the process environment containing corrosive gases.

[0044] The rotary drive mechanism 30 drives the first screen layer 10 and the second screen layer 20 to rotate relative to each other around a preset rotation axis, thereby changing the first overlap between the first through hole 110 and the corresponding third through hole 210, and simultaneously changing the second overlap between the second through hole 120 and the corresponding fourth through hole 220. Through precise control of the rotary drive mechanism 30, the rotation angle of the first screen layer 10 can be precisely adjusted, thereby enabling accurate adjustment of the first overlap between the first through hole 110 and the corresponding third through hole 210 and the second overlap between the second through hole 120 and the corresponding fourth through hole 220. This facilitates precise control of the plasma distribution within the process chamber, thus improving the control accuracy and response speed of the etching rate, and enabling better handling of rapid changes in process requirements.

[0045] In an exemplary embodiment, the rotary drive mechanism 30 is used to drive the first screen layer 10 to rotate around a preset rotation axis, while the second screen layer 20 is fixed, thereby enabling the first screen layer 10 to rotate relative to the second screen layer 20.

[0046] Specifically, the first screen layer 10 further includes an engagement portion 130, which includes a plurality of engagement teeth (not shown). Correspondingly, the rotary drive mechanism 30 includes: a drive motor 310; and a transmission gear 320, which is fixedly connected to the output shaft of the drive motor 310 and coaxially engaged, and engages with the engagement portion 130 of the first screen layer 10 to drive the first screen layer 10 to rotate.

[0047] The transmission gear 320 is fixedly connected to the output shaft of the drive motor 310 and coaxially engaged. The transmission gear 320 also engages with the meshing part 130 of the first screen layer 10, thereby realizing torque transmission between the drive motor 310 and the first screen layer 10.

[0048] In an exemplary embodiment, the drive motor 310 is a common motor. Accordingly, the rotary drive mechanism 30 further includes a reduction mechanism 330. The input end of the reduction mechanism 330 is connected to the output end of the drive motor 310, and the output end of the reduction mechanism 330 is used to drive the transmission gear 320 to rotate.

[0049] In another exemplary embodiment, the drive motor may also be a servo motor, and correspondingly, the rotary drive mechanism may not include a reduction gear mechanism. The rotor speed of the servo motor is controlled by the input signal, enabling rapid response and possessing characteristics such as a small electromechanical time constant and high linearity. It can convert the received electrical signal into angular displacement or angular velocity output on the motor shaft to precisely drive the controlled object.

[0050] The rotation angle of the first screen layer 10 around the preset rotation axis can be specifically set according to process requirements. For example, the rotation angle of the first screen layer 10 around the preset rotation axis is 0 to 10 degrees.

[0051] In one exemplary embodiment, the rotary drive mechanism 30 further includes a position encoder 340 disposed on the input shaft of the drive motor 310, for obtaining the rotation angle of the first screen layer 10 by detecting the rotation angle of the drive motor 310.

[0052] A position encoder 340 is installed on the input shaft of the drive motor 310 to detect the rotation angle of the drive motor 310. Then, the rotation angle of the first screen layer 10 is obtained through the rotation angle of the drive motor 310, so as to realize the real-time detection of the rotation angle of the first screen layer 10.

[0053] By detecting the rotation angle of the first screen layer 10 in real time, accurate position feedback information can be obtained, thereby providing the controller with precise control basis. Therefore, closed-loop control of the rotation angle of the first screen layer 10 can be realized, making the adjustment of plasma flow more precise and improving the control accuracy of the system.

[0054] In one exemplary embodiment, the position encoder 340 employs a high-resolution photoelectric encoder. The photoelectric encoder has high resolution and is dustproof and waterproof, ensuring reliable operation in harsh environments.

[0055] In an exemplary embodiment, the rotary drive mechanism 30 is also electrically connected to a control device (not shown) so that the rotary drive mechanism 30 operates under the control of the control device. By automatically controlling the rotary drive mechanism 30 to rotate the first screen layer 10, the control device changes the first overlap between the first through hole 110 and the corresponding third through hole 210, and the second overlap between the second through hole 120 and the corresponding fourth through hole 220. This achieves precise control of the plasma flow distribution within the process chamber, which is beneficial for improving the stability and reliability of the ion screen structure control.

[0056] The control device is an existing controller capable of performing control functions, such as a proportional, integral, and derivative (PID) controller. Those skilled in the art can select one according to actual needs, and no restrictions are imposed here.

[0057] Accordingly, this utility model embodiment also provides a semiconductor processing apparatus, including the ion screen structure provided in this utility model embodiment. For details regarding the ion screen structure provided in this utility model embodiment, please refer to the foregoing sections; further details will not be repeated here.

[0058] The above-described embodiments of the present invention are combinations of the elements and features of the present invention. Unless otherwise stated, elements or features may be considered optional. Individual elements or features may be practiced without combination with other elements or features. Furthermore, embodiments of the present invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the present invention may be rearranged. Some constructions of any embodiment may be included in another embodiment and may be replaced by corresponding constructions of another embodiment. It will be apparent to those skilled in the art that claims in the appended claims that are not explicitly referenced in each other may be combined into embodiments of the present invention, or may be included as new claims in amendments filed after the submission of this application.

[0059] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is accorded the widest scope consistent with the principles and novel features disclosed herein.

[0060] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. An ion sieve structure, characterized in that, include: The first screen layer includes a first through hole and a second through hole, wherein the first through hole is located in the central region of the first screen layer and the second through hole is located in the edge region of the first screen layer. The second screen layer is stacked perpendicularly to the first screen layer and includes a third through hole and a fourth through hole. The third through hole is located in the central region of the second screen layer and is arranged in a one-to-one correspondence with the first through hole. The fourth through hole is located in the edge region of the second screen layer and is arranged in a one-to-one correspondence with the second through hole. A rotary drive mechanism is used to drive the first screen layer and the second screen layer to rotate relative to each other, so that the first through hole and the corresponding third through hole have a first degree of overlap, and the second through hole and the corresponding fourth through hole have a second degree of overlap.

2. The ion sieve structure as described in claim 1, characterized in that, The first screen layer includes an engaging portion; The rotary drive mechanism includes: a drive motor; and a transmission gear, which is fixedly connected to the output shaft of the drive motor and coaxially engaged with it, and engages with the meshing part of the first screen layer to drive the first screen layer to rotate.

3. The ion sieve structure as described in claim 2, characterized in that, The rotary drive mechanism further includes a reduction mechanism, the input end of which is connected to the output end of the drive motor, and the output end of which is used to drive the transmission gear to rotate.

4. The ion sieve structure as described in claim 2 or 3, characterized in that, The rotary drive mechanism further includes a position encoder disposed on the input shaft of the drive motor, used to obtain the rotation angle of the first screen layer by detecting the rotation angle of the drive motor.

5. The ion sieve structure as described in claim 1, characterized in that, Also includes: A sliding limiting groove is provided on the surface of the first screen layer facing the second screen layer and extends circumferentially. At least three sliding limit blocks, one end of each of the at least three sliding limit blocks is fixedly connected to the surface of the second screen layer facing the first screen layer and distributed circumferentially, and the other end of each sliding limit block is slidably engaged with the sliding limit groove.

6. The ion sieve structure as described in claim 1, characterized in that, The first screen layer rotates around a preset rotation axis at an angle of 0 to 10 degrees.

7. The ion sieve structure as described in claim 1, characterized in that, The cross-sections of the first through hole, the second through hole, the third through hole, and the fourth through hole are all circular.

8. The ion sieve structure as described in claim 7, characterized in that, The diameters of the first through hole, the second through hole, the third through hole, and the fourth through hole are 3 to 10 mm, respectively.

9. A semiconductor processing apparatus, characterized in that, Includes the ion sieve structure as described in any one of claims 1 to 8.

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