Focusing electrode, extraction mechanism, ion beam generator and ion implanter

Abstract

A focusing electrode plate, an extraction mechanism, an ion beam generating device, and an ion implanter are disclosed. The focusing electrode plate includes a first channel penetrating the electrode body, through which ions pass. The radial cross-section of the first channel is elongated, and the depth of the first channel is greater than or equal to the width of the entrance end of the first channel. As the depth of the first channel increases, the potential difference between the entrance / exit of the first channel and the interior of the first channel increases, thereby improving the focusing effect on the ion beam.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a focusing electrode, an extraction mechanism, an ion beam generator, and an ion implanter. Background Technology

[0002] Ion implantation is a material modification method that introduces dopant atoms into a solid. In a vacuum system, ion implantation uses an ion implantation device to irradiate a solid material with an accelerated ion beam containing the atoms to be doped. The ion beam interacts with the atoms or molecules in the solid material, causing the incident ions to gradually lose energy and eventually remain within the material. This alters the material's surface composition, structure, and properties, forming a surface layer with specific properties in the selected area, thereby optimizing the material's surface properties or acquiring new, superior properties.

[0003] In ion implantation equipment, the high-energy ion beam generated by the ion generator propagates along the beam path. Due to the repulsive force between like charges of ions within the ion beam, the ion beam gradually diverges outward. To maintain the collimation and transmission efficiency of the ion beam, dynamic focusing adjustment of the diverging ion beam is required.

[0004] However, the focusing effect of ion implantation equipment still needs to be improved. Utility Model Content

[0005] The present invention addresses the problem of providing a focusing electrode, an extraction mechanism, an ion beam generator, and an ion implanter, which improves the focusing effect of the focusing electrode on the ion beam.

[0006] To address the aforementioned problems, this utility model provides a focusing electrode plate. The focusing electrode plate is disposed on one side of the ion outlet of an ion source and is used to prevent spatial electrons from moving towards the ion source. The focusing electrode plate includes: an electrode body; the electrode body is provided with a first channel through which ions pass, the radial cross-section of the first channel is elongated, and the depth of the first channel is greater than or equal to the width of the entrance end of the first channel.

[0007] Optionally, the first channel has an inlet and an outlet at its two ends, respectively. The inlet is used for ion injection, and the outlet is used for ion emission. The width of the first channel is equal at all positions from the inlet to the outlet, or the width of the first channel gradually increases.

[0008] Optionally, the width of the first channel gradually increases from the inlet end to the outlet end, and the first channel is funnel-shaped.

[0009] Optionally, the width of the first channel increases in the direction from the inlet end to the outlet end, and the inner wall of the first channel is stepped.

[0010] Optionally, the angle between the inner wall of the first channel and the centerline of the first channel is within 20 degrees.

[0011] Optionally, the ratio of the depth of the first channel to the width of the entrance end of the first channel is within 10.

[0012] Accordingly, this utility model embodiment also provides a suction mechanism, including: a focusing electrode plate as described in any embodiment of this utility model; a grounding electrode plate located on the side of the focusing electrode plate and facing the outlet end, wherein the grounding electrode plate has a through second channel, and the second channel is disposed opposite to the first channel.

[0013] Accordingly, this utility model embodiment also provides an ion beam generating device, including: an ion source for generating ions, the ion source including an ion emission outlet; and an extraction mechanism as described in any embodiment of this utility model, located on the side of the ion source and facing the ion emission outlet, the extraction mechanism including the focusing electrode plate and a grounding electrode plate located on the side of the focusing electrode plate facing away from the ion source, the first channel of the focusing electrode plate being disposed opposite to the ion emission outlet.

[0014] Accordingly, this utility model embodiment also provides an ion implanter, including: the ion beam generating device described in any embodiment of this utility model.

[0015] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0016] This utility model embodiment provides a focusing electrode plate, which is disposed on one side of the ion outlet of an ion source. The focusing electrode plate is used to prevent spatial electrons from moving towards the ion source. The focusing electrode plate includes: an electrode body; the electrode body has a first channel through which ions pass, the radial cross-section of the first channel is elongated, and the depth of the first channel is greater than or equal to the width of the inlet end of the first channel; wherein, along the direction from the inlet end of the first channel to the interior of the first channel, the absolute value of the relative potential gradually increases, and along the direction from the outlet end of the first channel to the interior of the first channel, the absolute value of the relative potential also gradually increases. Therefore, compared with the scheme where the depth of the first channel is less than the width of the first channel, the increased depth of the first channel in this embodiment is beneficial to enhancing the absolute value of the relative potential along the direction from the inlet end of the first channel to the interior of the first channel. The increasing trend of the ion beam and the increasing absolute value of the relative potential along the direction from the outlet end of the first channel towards the interior of the first channel result in an increase in the potential difference between the inlet end and the interior of the first channel, as well as an increase in the potential difference between the outlet end and the interior of the first channel. This increases the velocity of the ions within the first channel and shortens the time the ions are constrained by divergence within the first channel, thereby improving the focusing effect of the focusing electrode on the ion beam. In addition, the focusing electrode is used to apply a voltage with the opposite polarity to the charge of the ion beam, thus the focusing electrode can also suppress the reverse flow of downstream charged particles. In summary, by adopting the focusing electrode of this embodiment, it is beneficial to improve the focusing effect on the ion beam and also to suppress the reverse flow of downstream charged particles. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of an ion beam generating device;

[0018] Figure 2 yes Figure 1 An example diagram showing the potential distribution of the focusing electrode in the ion beam generator.

[0019] Figure 3 yes Figure 1 Simulation diagram of the potential distribution of the ion beam generator shown;

[0020] Figure 4 This is a schematic diagram of the focusing electrode plate according to an embodiment of the present invention;

[0021] Figure 5 yes Figure 4 An example diagram of the potential distribution of the focusing electrode is shown.

[0022] Figure 6 This is a schematic diagram of the suction mechanism according to an embodiment of the present invention;

[0023] Figure 7 This is a schematic diagram of the structure of an ion beam generating device according to an embodiment of the present invention;

[0024] Figure 8 yes Figure 7 The simulation diagram of the potential distribution of the ion beam generator shown is shown. Detailed Implementation

[0025] Currently, the focusing effect of ion implanters still needs improvement. This paper analyzes the reasons why the focusing effect of ion implanters still needs improvement, using a schematic diagram of an ion beam generator as an example.

[0026] Figure 1 This is a schematic diagram of an ion beam generating device. Figure 2 yes Figure 1 The diagram shows an example of the potential distribution of the focusing electrode in the ion beam generator. Figure 3 yes Figure 1 The simulation diagram of the potential distribution of the ion beam generator shown is shown.

[0027] It should be noted that, Figure 1 and Figure 2 The structural diagram of the focusing electrode in the diagram is for illustrative purposes only and is intended to show the position and basic function of the focusing electrode in the ion beam generator. The actual shape and size of the focusing electrode can be adjusted according to specific application requirements.

[0028] refer to Figure 1 The ion beam generating device includes: an ion source 20 for generating ions, the ion source 20 including an ion emission outlet 21; and an extraction mechanism 22 located on the side of the ion source 20 and facing the ion emission outlet 21. The extraction mechanism 22 includes a focusing electrode 23 and a grounding electrode 27 located on the side of the focusing electrode 23 facing away from the ion source 20. The focusing electrode 23 has an ion beam channel 24, the ion beam channel 24 is disposed opposite to the ion emission outlet 21, and the depth of the ion beam channel 24 is less than the width of the ion beam channel 24.

[0029] It should be noted that the depth refers to the dimension of the ion beam channel 24 along its extension direction.

[0030] Reference Figure 2 , Figure 2The dashed lines in the diagram represent equipotential surfaces. Along the direction from the inlet end 25 of the ion beam channel 24 towards its interior, the absolute value of the relative potential gradually increases. Similarly, along the direction from the outlet end 26 of the ion beam channel 24 towards its interior, the absolute value of the relative potential also gradually increases. Ions within the ion beam channel 24 are acted upon by an electric field force F2, which is perpendicular to the equipotential surfaces. Because F2 has a radially outward component, the ions diverge within the ion beam channel 24 under the influence of F2. Ions at the outer ends of the ion beam channel 24 are acted upon by an electric field force F1, which is perpendicular to the equipotential surfaces. Because F1 has a radially inward component, the ions focus at the outer ends of the ion beam channel 24 under the influence of F1.

[0031] Continue to refer to Figure 2 Along the direction from the inlet end 25 of the ion beam channel 24 towards the interior of the ion beam channel 24, the absolute value of the relative potential gradually increases. Similarly, along the direction from the outlet end 26 of the ion beam channel 24 towards the interior of the ion beam channel 24, the absolute value of the relative potential also gradually increases. However, because the depth of the ion beam channel 24 is less than its width (i.e., the depth of the ion beam channel 24 is too small), the tendency for the absolute value of the relative potential to gradually increase along the direction from the inlet end 25 of the ion beam channel 24 towards the interior of the ion beam channel 24 is weakened, as is the tendency for the absolute value of the relative potential to decrease. The absolute value of the relative potential gradually increases along the direction from the exit end 26 of the ion beam channel 24 towards the interior of the ion beam channel 24. This results in a smaller potential difference between the inlet end 25 and the interior of the ion beam channel 24, as well as a smaller potential difference between the exit end 26 and the interior of the ion beam channel 24. Consequently, the velocity of ions within the ion beam channel 24 decreases, and the time during which ions are constrained by divergence within the ion beam channel 24 increases. Consequently, it becomes difficult for the focusing electrode 23 to effectively focus the ion beam.

[0032] Continue to refer to Figure 3 , Figure 3 yes Figure 1 A simulation diagram of the potential distribution of an ion beam generator. The horizontal axis represents the distance between the ion source 20 and the extraction mechanism 22 along the ion travel path, while the vertical axis represents the device dimensions of the ion source 20 and the extraction mechanism 22 along the direction perpendicular to the ion travel path. Figure 3 As can be seen, along the direction of the ion's travel path, the ions are emitted from the ion source 20, and after passing through the extraction mechanism 22, the ion beam diverges.

[0033] To address the aforementioned technical problems, the present invention provides a focusing electrode plate, which is disposed on one side of the ion outlet of an ion source. The focusing electrode plate is used to prevent spatial electrons from moving toward the ion source. The focusing electrode plate includes: an electrode body; the electrode body is provided with a first channel through which ions pass, the radial cross-section of the first channel is elongated, the depth of the first channel is greater than or equal to the width of the entrance end of the first channel, and the width of the entrance end of the first channel is also the width of the first channel on the side closer to the ion source.

[0034] In the scheme disclosed in this embodiment of the utility model, the absolute value of the relative potential gradually increases along the direction from the entrance end of the first channel toward the interior of the first channel, and also gradually increases along the direction from the exit end of the first channel toward the interior of the first channel. Therefore, compared with the scheme where the depth of the first channel is less than the width of the first channel, the increased depth of the first channel in this embodiment is beneficial to enhancing the trend of the absolute value of the relative potential gradually increasing along the direction from the entrance end of the first channel toward the interior of the first channel, and also enhancing the trend of the absolute value of the relative potential gradually increasing along the direction from the exit end of the first channel toward the interior of the first channel. Correspondingly, the entrance end of the first channel... The increased potential difference between the outlet end and the interior of the first channel, as well as the increased potential difference between the outlet end and the interior of the first channel, increases the velocity of ions within the first channel and shortens the time the ions are constrained by divergence within the first channel, thereby improving the focusing effect of the focusing electrode on the ion beam. Furthermore, the focusing electrode is used to apply a voltage with the opposite polarity to the charge of the ion beam, thus also suppressing the reverse flow of downstream charged particles. In summary, by employing the focusing electrode of this embodiment, the focusing effect on the ion beam is improved, and it also helps to suppress the reverse flow of downstream charged particles.

[0035] Figure 4 This is a schematic diagram of the focusing electrode plate according to an embodiment of the present invention. Figure 5 yes Figure 4 The diagram shows an example of the potential distribution of the focusing electrode.

[0036] refer to Figure 4 A focusing electrode 100 is disposed on one side of the ion outlet of the ion source. The focusing electrode 100 is used to prevent spatial electrons from moving towards the ion source. The focusing electrode 100 includes: an electrode body 101; the electrode body 101 is provided with a first channel 102 through which ions pass, the radial cross section of the first channel 102 is elongated, and the depth H of the first channel 102 is greater than or equal to the width W of the inlet end 103 of the first channel 102.

[0037] It should be noted that placing the focusing electrode 100 on the ion outlet side of the ion source is beneficial for focusing ions by the focusing electrode 100, thereby improving the reliability of the ion implantation process.

[0038] It should also be noted that the width W of the inlet end 103 of the first channel 102 is the width of the first channel 102 on the side closer to the ion source.

[0039] As an example, the focusing electrode 100 is the focusing electrode in the suction mechanism.

[0040] The electrode body 101 is used for ion focusing and also for suppressing the reverse flow of charged particles downstream.

[0041] The first channel 102 is used as a channel for ion transport.

[0042] It should be noted that the depth H of the first channel 102 refers to the dimension of the first channel 102 in the direction of extension.

[0043] In this embodiment, the depth H of the first channel 102 is greater than or equal to the width W of the entrance end 103 of the first channel 102.

[0044] It should be noted that, in conjunction with references Figure 5 Along the direction from the entrance end 103 of the first channel 102 towards the interior of the first channel 102, the absolute value of the relative potential gradually increases. Similarly, along the direction from the exit end 104 of the first channel 102 towards the interior of the first channel 102, the absolute value of the relative potential also gradually increases. Therefore, compared to a scheme where the depth of the first channel is less than its width, the increased depth H of the first channel 102 in this embodiment enhances the trend of the absolute value of the relative potential gradually increasing along the direction from the entrance end 103 of the first channel 102 towards the interior of the first channel 102. The absolute value of the enhanced relative potential gradually increases along the direction from the outlet end 104 of the first channel 102 towards the interior of the first channel 102. Consequently, the potential difference between the inlet end 103 of the first channel 102 and the interior of the first channel 102 increases, as does the potential difference between the outlet end 104 of the first channel 102 and the interior of the first channel 102. This increases the velocity of the ions within the first channel 102 and shortens the time that the ions are subject to divergence constraint within the first channel 102, thereby improving the focusing effect of the focusing electrode 100 on the ion beam.

[0045] In this embodiment, the first channel 102 has an inlet end 103 and an outlet end 104 at its two ends. The inlet end 103 is used for ion injection, and the outlet end 104 is used for ion emission. The width of the first channel 103 gradually increases from the inlet end 103 to the outlet end 104.

[0046] It should be noted that the width of the first channel 102 gradually increases from the inlet end 103 to the outlet end 104, which helps to reduce the probability of ions hitting the inner wall of the first channel 102, thereby reducing the probability of the electrode body 101 being damaged by ion impacts or the workpiece being contaminated by particles sputtered by ion impacts.

[0047] In other embodiments, the width of the first channel is equal at all locations along the direction from the inlet end to the outlet end.

[0048] In this embodiment, the width W of the first channel 102 gradually increases from the inlet end 103 to the outlet end 104, and the first channel 102 is funnel-shaped.

[0049] It should be noted that since the first channel 102 is funnel-shaped, the electric field force experienced by ions changes gradually as they pass through the first channel 102, which helps to further reduce the probability of ions colliding with the inner wall of the first channel 102.

[0050] In other embodiments, the width of the first channel gradually increases from the inlet end to the outlet end, and the inner wall of the first channel is stepped.

[0051] It should be noted that when the step is formed by protruding relative to the inner wall, it is beneficial to further improve the focusing effect of the focusing electrode on the ion beam; when the step is formed by indentation relative to the inner wall, it is beneficial to further reduce the probability of ions colliding with the inner wall of the first channel.

[0052] In this embodiment, the angle B between the inner wall of the first channel 102 and the center line of the first channel 102 should not be too large. If the angle B between the inner wall of the first channel 102 and the center line of the first channel 102 is too large, the edge effect of the outlet end 104 is likely to be strong, resulting in an uneven distribution of the electric field at the edge of the outlet end 104. Therefore, in this embodiment, the angle B between the inner wall of the first channel 102 and the center line of the first channel 102 is within 20 degrees.

[0053] In this embodiment, the ratio of the depth H of the first channel 102 to the width W of the entrance end 103 of the first channel 102 should not be too large. If the ratio is too large, the probability of ions colliding with the inner wall of the first channel 102 will increase due to the divergence of the ion beam itself. Therefore, in this embodiment, the ratio of the depth H of the first channel 102 to the width W of the entrance end 103 is less than 10. Specifically, the ratio of the depth H of the first channel 102 to the width W of the entrance end 103 can be 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10.

[0054] In this embodiment, the depth H of the first channel 102 should not be too small. If the depth H of the first channel 102 is too small, it will weaken the trend of the absolute value of the relative potential gradually increasing along the direction from the entrance end 103 of the first channel 102 towards the interior of the first channel 102, and weaken the trend of the absolute value of the relative potential gradually increasing along the direction from the exit end 104 of the first channel 102 towards the interior of the first channel 102. As a result, the potential difference between the entrance end 103 of the first channel 102 and the interior of the first channel 102 will be small, and the potential difference between the exit end 104 of the first channel 102 and the interior of the first channel 102 will also be small. Consequently, the velocity of ions in the first channel 102 will slow down, and the time that ions are subject to divergence constraint in the first channel 102 will be longer. This will easily lead to poor focusing effect of the focusing electrode 100 on the ion beam.

[0055] In this embodiment, the depth H of the first channel 102 should not be too large. If the depth H of the first channel 102 is too large, since the ions in the first channel 102 are divergent, the probability of the divergent ions being focused on both sides of the first channel 102 is easily reduced, thereby increasing the probability of ions colliding with the inner wall of the first channel 102.

[0056] In this embodiment, the first channel 102 has an inlet end 103 and an outlet end 104 at its two ends. The inlet end 103 is used for ion injection, and the outlet end 104 is used for ion emission. The width W of the inlet end 103 should not be too large or too small. If the width W of the inlet end 103 is too large, the width of the outlet end 104 will also be too large, which will easily lead to a strong edge effect at the outlet end 104, resulting in an uneven distribution of the electric field at the edge of the outlet end 104. This will increase the divergence angle of the ion beam when it leaves the focusing electrode 100, reducing the focusing effect of the focusing electrode 100 on the ion beam. If the width W of the inlet end 103 is too small, the width of the outlet end 104 will also be too small, which will easily increase the collision of ions with the inner wall of the first channel 102 at the outlet end 104, thus easily leading to ion loss and reducing the efficiency of ion implantation.

[0057] Accordingly, this utility model also provides a suction mechanism. Figure 6 This is a schematic diagram of the suction mechanism according to an embodiment of the present invention.

[0058] refer to Figure 6 and in conjunction with references Figure 4 The suction mechanism 203 includes: a focusing electrode plate 100 as described in any embodiment of the present invention; a grounding electrode plate 204 located on the side of the focusing electrode plate 100 and facing the outlet end 104, wherein the grounding electrode plate 204 has a through second channel 205, and the second channel 205 is disposed opposite to the first channel 102.

[0059] The focusing electrode 100 is used to apply a voltage with the opposite polarity to the charge of the ion beam, and thus the focusing electrode 100 can also suppress the reverse flow of charged particles downstream.

[0060] Specifically, if the ions extracted by the extraction mechanism 203 from the ion source are positively charged ions, then a negative voltage is applied to the focusing electrode 100.

[0061] It should be noted that since a voltage with the opposite polarity to the charge of the ion beam is applied to the focusing electrode 100, the width of the ion beam can be adjusted by adjusting the voltage applied to the focusing electrode 100.

[0062] The extraction mechanism 203 is used to provide an initial velocity for the ion beam generated by the ion source.

[0063] The grounding electrode 204 provides a stable potential reference for the entire ion source system. Other electrodes (such as the focusing electrode 100) create the required electric field gradients relative to the ground, thereby precisely guiding the path of the ion beam.

[0064] The second channel 205 provides a stable transport path for ions, ensuring that ions can be transported from the first channel 102 of the focusing electrode 100 to the second channel 205, and then the ions leave the grounding electrode 204 through the second channel 205.

[0065] It should be noted that the second channel 205 is arranged opposite to the first channel 102, which is conducive to ions smoothly entering the second channel 205 of the grounding electrode plate 204 from the outlet end 104 of the first channel 102.

[0066] Accordingly, this utility model also provides an ion beam generating device. Figure 7 This is a schematic diagram of the structure of an ion beam generating device according to an embodiment of the present invention. Figure 8 yes Figure 7 The simulation diagram of the potential distribution of the ion beam generator shown is shown.

[0067] refer to Figure 7 and in conjunction with references Figure 6 The ion beam generating device 200 includes: an ion source 201 for generating ions, the ion source 201 including an ion emission outlet 202; and an extraction mechanism 203 as described in any embodiment of the present invention, located on the side of the ion source 201 and facing the ion emission outlet 202, the extraction mechanism 203 including a focusing electrode 100 and a grounding electrode 204 located on the side of the focusing electrode 100 facing away from the ion source 201, the first channel 102 of the focusing electrode 100 being disposed opposite to the ion emission outlet 202.

[0068] It should be noted that the ion beam generating device 200 includes the focusing electrode plate 100 of this utility model. Since the depth H of the first channel 102 of the electrode body 101 in the focusing electrode plate 100 is greater than or equal to the width W of the entrance end 103 of the first channel 102, the focusing electrode plate 100 can better focus the ion beam when the ion source 201 generates the ion beam, thereby enabling the ion beam generating device 200 to generate an ion beam with higher focus.

[0069] Ion source 201 is used to generate ion beams, thus providing the basis for the normal operation of the entire ion implanter.

[0070] The ion emission outlet 202 is used to provide a stable emission channel for ions. In addition, the ion emission outlet 202 also has an important influence on the initial direction and divergence angle of the ions.

[0071] In this embodiment, the first channel 102 of the focusing electrode 100 is arranged opposite to the ion emission outlet 202, which is beneficial for ions to be efficiently transported along a predetermined path after leaving the ion source 201, thereby reducing the divergence and loss of ions during the transmission process and improving the ion transmission efficiency.

[0072] refer to Figure 8 and in conjunction with references Figure 7 , Figure 8 yes Figure 7 The simulation diagram of the potential distribution of the ion beam generator 200 is shown. The horizontal axis represents the distance between the ion source 201 and the extraction mechanism 203 along the direction of ion travel, and the vertical axis represents the device dimensions of the ion source 201 and the extraction mechanism 203 along the direction perpendicular to the ion travel path. Figure 8 and Figure 3 To make a comparison, from Figure 8 As can be seen, along the direction of the ion's travel path, the ions are emitted from the ion source 201 and, after passing through the extraction mechanism 203, Figure 8 The ion beam in the middle is more than Figure 3 The ion beam is more convergent, meaning that the focusing electrode 100 of this invention achieves focusing of the ion beam.

[0073] Accordingly, this utility model also provides an ion implanter.

[0074] Reference Figure 7 The ion implanter includes: the ion beam generating device 200 as described in any embodiment of this utility model.

[0075] It should be noted that, compared with ion implanters that have additional focusing components, the ion implanter in this embodiment includes the focusing electrode plate 100 of this utility model. Since the depth H of the first channel 102 of the electrode body 101 in the focusing electrode plate 100 is greater than or equal to the width W of the entrance end 103 of the first channel 102, the focusing electrode plate 100 can better focus the ion beam when the ion source 201 generates ions, and the performance of the corresponding ion implantation equipment is better.

[0076] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A focusing electrode plate, characterized in that, The focusing electrode is disposed on one side of the ion outlet of the ion source, and the focusing electrode is used to prevent spatial electrons from moving towards the ion source, including: Electrode body; The electrode body has a first channel through which ions pass. The radial cross-section of the first channel is elongated, and the depth of the first channel is greater than or equal to the width of the entrance end of the first channel.

2. The focusing electrode plate as described in claim 1, characterized in that, The first channel has an inlet and an outlet at its two ends. The inlet is used for ion injection, and the outlet is used for ion emission. The width of the first channel is equal at all positions from the inlet to the outlet, or the width of the first channel gradually increases.

3. The focusing electrode plate as described in claim 2, characterized in that, The width of the first channel gradually increases from the inlet end to the outlet end, and the first channel is funnel-shaped.

4. The focusing electrode plate as described in claim 2, characterized in that, The width of the first channel increases from the inlet end to the outlet end, and the inner wall of the first channel is stepped.

5. The focusing electrode plate as described in claim 3 or 4, characterized in that, The angle between the inner wall of the first channel and the centerline of the first channel is within 20 degrees.

6. The focusing electrode plate as described in claim 1, characterized in that, The ratio of the depth of the first channel to the width of the entrance end of the first channel is less than 10.

7. A suction mechanism, characterized in that, include: Focusing electrode plate as described in any one of claims 1 to 6; A grounding electrode plate is located on the side of the focusing electrode plate and faces the outlet end. The grounding electrode plate has a through second channel, and the second channel is arranged opposite to the first channel.

8. An ion beam generating apparatus, comprising: An ion source for generating ions, the ion source including an ion emission outlet; The extraction mechanism as described in claim 7 is located on the side of the ion source and facing the ion emission outlet. The extraction mechanism includes the focusing electrode plate and a grounding electrode plate located on the side of the focusing electrode plate facing away from the ion source. The first channel of the focusing electrode plate is disposed opposite to the ion emission outlet.

9. An ion implanter, characterized in that, include: The ion beam generating apparatus as described in claim 8.

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