N-type high-purity silicon target red phosphorus doping device

Abstract

The utility model relates to the technical field of semiconductor material preparation, and disclose a kind of N type high-purity silicon target material red phosphorus doping device, including reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, reaction chamber adopts quartz material double-layer structure, the inner wall of reaction chamber is provided with silicon nitride coating, the outer wall of reaction chamber is provided with vacuum pump set, rotating support mechanism includes high-temperature ceramic support, magnetic fluid seal shaft and brushless motor, high-temperature ceramic support is connected with the output end of brushless motor by magnetic fluid seal shaft, by integrated reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, by rotating dynamic doping, intelligent temperature control and waste gas circulation technology, significantly improve the uniformity of doping and raw material utilization rate, realize the efficient, uniform doping of silicon target material.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material preparation technology, and in particular to a red phosphorus doping device for N-type high-purity silicon target. Background Technology

[0002] Semiconductors are materials with electrical conductivity between that of insulators and conductors. Their conductivity is easily controlled, making them suitable as components for information processing. The doping process is essentially an oxidation or reduction process of a conductive polymer; the oxidizing or reducing agent used in the doping process is called a dopant. A target material is the material targeted by high-speed charged particles. In high-energy laser weapons, different power densities, output waveforms, and wavelengths of laser light interact with different target materials, producing different destructive effects.

[0003] Existing phosphorus doping processes mostly employ vapor deposition, which suffers from poor doping uniformity. Static silicon targets are prone to uneven distribution of phosphorus vapor, affecting the consistency of electrical performance. At the same time, phosphorus utilization is low, and unreacted phosphorus vapor is directly emitted, resulting in raw material waste and environmental pollution. Furthermore, the temperature control accuracy is insufficient, the temperature gradient in the reaction chamber is large, leading to fluctuations in the thickness of the doped layer. The automation level is low, process parameters rely on manual adjustment, and the yield is unstable.

[0004] To this end, we propose an N-type high-purity silicon target red phosphorus doping device. Utility Model Content

[0005] The present invention aims to solve the technical problems existing in the prior art and provide an N-type high-purity silicon target red phosphorus doping device.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: an N-type high-purity silicon target red phosphorus doping device, comprising a reaction chamber, a rotating support mechanism, a phosphorus vapor injection system, a zoned temperature control module, a gas circulation unit, and an intelligent control system. The reaction chamber adopts a double-layer structure made of quartz material, the inner wall of the reaction chamber is coated with silicon nitride, and the outer wall of the reaction chamber is equipped with a vacuum pump group.

[0007] Preferably, the rotating support mechanism includes a high-temperature resistant ceramic bracket, a magnetic fluid sealing shaft, and a brushless motor. The high-temperature resistant ceramic bracket is connected to the output end of the brushless motor through the magnetic fluid sealing shaft. The outer wall of the high-temperature resistant ceramic bracket is uniformly provided with a slot array for mounting silicon target material.

[0008] Preferably, the phosphorus vapor injection system includes a multi-stage annular nozzle and a red phosphorus evaporator. One end of the multi-stage annular nozzle is fixedly connected to the red phosphorus evaporator. The nozzles of the multi-stage annular nozzle are staggered at a 30° angle with a gradient spacing design. The evaporation temperature of the red phosphorus evaporator is controlled at 450±5℃.

[0009] Preferably, the zoned temperature control module divides the reaction chamber into upper, middle and lower zones, each zone is independently equipped with a resistance heater and an infrared thermometer, the temperature control accuracy is ±1℃, and it supports gradient heating programs.

[0010] Preferably, the gas circulation unit includes a cyclone separator, a molecular sieve adsorber, a circulation pipeline, and a mass flow meter. The cyclone separator is used to filter solid impurities, and the molecular sieve adsorber is used to recover phosphorus vapor.

[0011] Preferably, the outer wall of the circulation pipeline is fixedly connected to the mass flow meter, and the reuse rate of the mixed carrier gas is ≥85%.

[0012] Preferably, the intelligent control system includes a PLC controller and a human-machine interface.

[0013] Preferably, the PLC controller integrates a PID algorithm for real-time adjustment of temperature, speed, and air pressure parameters.

[0014] Preferably, the human-machine interface supports process recipe storage and alarm log functions.

[0015] This invention provides a red phosphorus doping device for N-type high-purity silicon target materials. It has the following beneficial effects:

[0016] 1. This N-type high-purity silicon target red phosphorus doping device integrates a reaction chamber, a rotating support mechanism, a phosphorus vapor injection system, a zoned temperature control module, a gas circulation unit, and an intelligent control system. Through rotating dynamic doping, intelligent temperature control, and waste gas circulation technology, it significantly improves the doping uniformity and raw material utilization, achieving efficient and uniform doping of silicon targets.

[0017] 2. This N-type high-purity silicon target red phosphorus doping device, by setting up a zoned temperature control module, makes the temperature control in the reaction chamber more precise, reduces the fluctuation of the doped layer thickness, and further improves the doping quality.

[0018] 3. This N-type high-purity silicon target red phosphorus doping device, by setting up a gas circulation unit, not only improves the reusability of the mixed carrier gas and reduces raw material waste, but also effectively recovers unreacted phosphorus vapor and reduces environmental pollution. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the device module of this utility model. Detailed Implementation

[0020] To more clearly illustrate the embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are merely exemplary, and those skilled in the art can derive other embodiments based on the provided drawings without creative effort.

[0021] The structures, proportions, sizes, etc. illustrated in this specification are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed herein, and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and objectives that this utility model can produce, should still fall within the scope of the technical content disclosed in this utility model.

[0022] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0023] In the description of the embodiments of this utility model, it should be noted that the terms "center," "upper," "lower," "inner," "outer," and "side," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the utility model product is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0024] In the description of the embodiments of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this utility model based on the specific circumstances.

[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0026] Example 1: A red phosphorus doping device for N-type high-purity silicon target, such as... Figure 1 As shown, the system includes a reaction chamber, a rotating support mechanism, a phosphorus vapor injection system, a zoned temperature control module, a gas circulation unit, and an intelligent control system. The reaction chamber adopts a double-layer structure made of quartz material, with a silicon nitride coating on the inner wall and a vacuum pump unit on the outer wall. The rotating support mechanism includes a high-temperature resistant ceramic support, a magnetic fluid sealing shaft, and a brushless motor. The high-temperature resistant ceramic support is connected to the output end of the brushless motor through the magnetic fluid sealing shaft. The outer wall of the high-temperature resistant ceramic support is uniformly provided with a slot array for mounting silicon targets. By integrating the reaction chamber, rotating support mechanism, phosphorus vapor injection system, zoned temperature control module, gas circulation unit, and intelligent control system, and through rotary dynamic doping, intelligent temperature control, and waste gas recirculation technology, the doping uniformity and raw material utilization rate are significantly improved, achieving efficient and uniform doping of silicon targets.

[0027] Example 2: Based on Example 1, as follows Figure 1 As shown, the phosphorus vapor injection system includes a multi-stage annular nozzle and a red phosphorus evaporator. One end of the multi-stage annular nozzle is fixedly connected to the red phosphorus evaporator. The nozzles of the multi-stage annular nozzle are staggered at a 30° angle with a gradient spacing design. The evaporation temperature of the red phosphorus evaporator is controlled at 450±5℃. A zoned temperature control module divides the reaction chamber into upper, middle, and lower zones. Each zone is independently equipped with a resistance heater and an infrared thermometer, with a temperature control accuracy of ±1℃, supporting gradient heating programs. By setting up the zoned temperature control module, the temperature control within the reaction chamber is more precise, reducing fluctuations in the doped layer thickness and further improving the doping quality.

[0028] Example 3: Based on Examples 1 and 2, as follows... Figure 1As shown, the gas circulation unit includes a cyclone separator, a molecular sieve adsorber, a circulation pipeline, and a mass flow meter. The cyclone separator filters solid impurities, the molecular sieve adsorber recovers phosphorus vapor, and the outer wall of the circulation pipeline is fixedly connected to the mass flow meter. The mixed carrier gas reuse rate is ≥85%. The intelligent control system includes a PLC controller and a human-machine interface (HMI). The PLC controller integrates a PID algorithm for real-time adjustment of temperature, speed, and pressure parameters. The HMI supports process recipe storage and alarm log functions. By setting up the gas circulation unit, not only is the reuse rate of the mixed carrier gas improved and raw material waste reduced, but unreacted phosphorus vapor is also effectively recovered, reducing environmental pollution.

[0029] The working principle of this utility model:

[0030] In operation, the silicon target to be doped is first installed in the slot array of the high-temperature ceramic support. The brushless motor is then started, driving the high-temperature ceramic support and silicon target to rotate via a magnetohydrodynamic sealed shaft. This ensures that phosphorus vapor is evenly distributed on the silicon target surface, improving doping uniformity. The phosphorus vapor is generated by a red phosphorus evaporator and evenly sprayed onto the rotating silicon target surface through multi-stage annular nozzles. The nozzle design of the multi-stage annular nozzles ensures that the phosphorus vapor evenly covers the silicon target, while avoiding localized overheating or insufficient doping. A zoned temperature control module, using independently configured resistance heaters and infrared thermometers, precisely controls the temperature in different areas of the reaction chamber, ensuring the doping process occurs within the set temperature range, improving the quality and stability of the doped layer. The gas circulation unit recycles the gas in the reaction chamber through a cyclone separator and a molecular sieve adsorber, reducing phosphorus vapor waste and emissions. The high reusability of the mixed carrier gas also reduces production costs. The intelligent control system integrates a PID algorithm into a PLC controller to monitor and adjust key parameters such as temperature, rotation speed, and gas pressure in real time, ensuring the stability and controllability of the doping process. The human-machine interface provides process recipe storage and alarm log functions, making it convenient for users to set process parameters and troubleshoot faults.

[0031] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claims. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. A red phosphorus doping device for N-type high-purity silicon target, characterized in that, It includes a reaction chamber, a rotating support mechanism, a phosphorus vapor injection system, a zoned temperature control module, a gas circulation unit, and an intelligent control system. The reaction chamber adopts a double-layer structure made of quartz material. The inner wall of the reaction chamber is coated with silicon nitride, and the outer wall of the reaction chamber is equipped with a vacuum pump group.

2. The red phosphorus doping device for N-type high-purity silicon target material according to claim 1, characterized in that: The rotating support mechanism includes a high-temperature resistant ceramic bracket, a magnetohydrodynamic sealing shaft, and a brushless motor.

3. The red phosphorus doping device for N-type high-purity silicon target material according to claim 2, characterized in that: The high-temperature resistant ceramic bracket is connected to the output end of the brushless motor via a magnetohydrodynamic sealing shaft.

4. The red phosphorus doping device for N-type high-purity silicon target material according to claim 2, characterized in that: The outer wall of the high-temperature resistant ceramic bracket is uniformly provided with a slot array.

5. The red phosphorus doping device for N-type high-purity silicon target material according to claim 1, characterized in that: The phosphorus vapor injection system includes a multi-stage annular nozzle and a red phosphorus evaporator, with one end of the multi-stage annular nozzle fixedly connected to the red phosphorus evaporator.

6. The red phosphorus doping device for N-type high-purity silicon target material according to claim 5, characterized in that: The nozzles of the multi-stage annular nozzles are staggered at a 30° angle with a gradient spacing design, and the evaporation temperature of the red phosphorus evaporator is controlled at 450±5℃.

7. The red phosphorus doping device for N-type high-purity silicon target material according to claim 1, characterized in that: The zoned temperature control module divides the reaction chamber into upper, middle and lower zones, each independently equipped with a resistance heater and an infrared thermometer, with a temperature control accuracy of ±1℃.

8. The red phosphorus doping device for N-type high-purity silicon target material according to claim 1, characterized in that: The gas circulation unit includes a cyclone separator, a molecular sieve adsorber, a circulation pipeline, and a mass flow meter. The outer wall of the circulation pipeline is fixedly connected to the mass flow meter.

9. The red phosphorus doping device for N-type high-purity silicon target material according to claim 1, characterized in that: The intelligent control system includes a PLC controller and a human-machine interface. The PLC controller integrates a PID algorithm.

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