Wafer surface plasma activation apparatus

Abstract

The utility model relates to technical field of semiconductor equipment, especially relates to a wafer surface plasma activation equipment, including process cavity and casing, the casing is located process cavity top, be equipped with plasma coil assembly in process cavity, casing upper portion is equipped with air supply component, just the air outlet of air supply component is to the casing inside setting, be equipped with ventilation component and heating assembly in the casing, heating assembly is away from process cavity setting, ventilation component is close to process cavity setting, just one end of ventilation component with the casing inside intercommunication, other end with process cavity intercommunication. Air supply component exports airflow through air outlet, and the airflow is heated after flowing through heating assembly and is blown evenly in the working area of plasma coil in process cavity through ventilation component, so that the plasma activation process of wafer surface can be carried out evenly and stably.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a wafer surface plasma activation device. Background Technology

[0002] In the semiconductor manufacturing field, wafer surface treatment processes play a crucial role in chip performance and yield. Among them, wafer surface plasma activation technology is a commonly used and key treatment method. It can change the physical and chemical properties of the wafer surface through the interaction of plasma and the wafer surface, such as improving the surface hydrophilicity, removing surface contaminants, and enhancing the adhesion of thin films to the wafer surface in subsequent processes.

[0003] Existing wafer surface plasma activation equipment has revealed serious problems in practical applications. Specifically, these devices exhibit uneven plasma activation areas on the wafer surface. This unevenness leads to differences in activation effects across different areas of the wafer. For example, in some areas, excessive plasma activation may cause excessive damage to the wafer surface, affecting the wafer's electrical properties and physical structure, thereby reducing chip reliability and stability. Conversely, in other areas, insufficient plasma activation fails to achieve the desired surface treatment effect, making subsequent process steps (such as coating and etching) difficult to perform smoothly, resulting in a decrease in product yield.

[0004] Furthermore, the non-uniformity of the plasma activation region on the wafer surface increases the uncertainty and complexity of the production process. To compensate for the impact of this non-uniformity, manufacturers often need to take additional process steps or adjust process parameters, which not only increases production costs and cycle time but may also introduce new process risks. Moreover, with the continuous development of semiconductor technology and the gradual increase in wafer size, the requirements for the uniformity of wafer surface treatment are becoming increasingly stringent. Existing wafer surface plasma activation equipment exhibits a more pronounced problem of non-uniform activation regions when dealing with large-size wafers, becoming one of the bottlenecks restricting the further development of semiconductor manufacturing technology.

[0005] Therefore, there is an urgent need to develop a new type of wafer surface plasma activation equipment that can effectively solve the problem of unevenness in the plasma activation region on the wafer surface, so as to meet the semiconductor manufacturing industry's demand for high-quality and high-yield production. Utility Model Content

[0006] In order to solve the above-mentioned technical problems in the prior art, this utility model provides a wafer surface plasma activation device.

[0007] The technical solution of this utility model to solve the above-mentioned technical problems is as follows:

[0008] This utility model provides a wafer surface plasma activation device, including a process chamber and a housing. The housing is disposed above the process chamber, and a plasma coil assembly is disposed inside the process chamber. An air supply assembly is disposed on the upper part of the housing, and the air outlet of the air supply assembly is disposed facing the interior of the housing. A ventilation assembly and a heating assembly are disposed inside the housing. The heating assembly is disposed away from the process chamber, and the ventilation assembly is disposed close to the process chamber. One end of the ventilation assembly is connected to the interior of the housing, and the other end is connected to the process chamber.

[0009] The wafer surface plasma activation equipment provided by this utility model delivers airflow to the heating component through the air outlet. After being heated by the heating component, the airflow is evenly blown onto the working area of ​​the plasma coil in the process chamber through the ventilation component, so that the plasma activation process on the wafer surface can be carried out uniformly and stably.

[0010] Based on the above technical solution, the present invention can also be improved in the following ways:

[0011] Furthermore, a water-cooling assembly is provided on the outside of the housing.

[0012] Furthermore, the water-cooling assembly includes water-cooling pipes and a water-cooling wall, the water-cooling wall being disposed on the outer wall of the housing, and the water-cooling pipes being disposed on the water-cooling wall.

[0013] The beneficial effect of adopting the above-mentioned further technical solution is that cooling water is circulated in the water-cooled pipeline, and the low temperature of the cooling water plays a role in cooling the plasma activation equipment, thus avoiding damage to other external components or personnel caused by the high temperature generated by the plasma activation process.

[0014] Furthermore, the air supply assembly is located on the axis of the housing.

[0015] The beneficial effect of adopting the above-mentioned further technical solution is that it ensures a more uniform distribution of airflow discharged from the air outlet.

[0016] Furthermore, the plasma coil assembly includes several sets of plasma coils and coil fixing components. The several sets of plasma coils are arranged concentrically around the axis of the housing, and each plasma coil is at a different distance from the air supply assembly.

[0017] The advantages of adopting the above-mentioned further technical solution are: to ensure more uniform plasma activation on the wafer surface, and the coil arrangement can avoid mutual interference between coils.

[0018] Furthermore, the coil fixing member is connected to the housing, the coil fixing member is arc-shaped, and the coil fixing member has several through holes.

[0019] The beneficial effect of adopting the above-mentioned further technical solution is that it can effectively fix the plasma coils, so that each plasma coil can maintain the stability of its arrangement.

[0020] Furthermore, the coil fixing component is made of polytetrafluoroethylene.

[0021] The beneficial effects of adopting the above-mentioned further technical solution are as follows: the coil fixing component made of polytetrafluoroethylene can effectively prevent interference to the coil during plasma activation, and has stronger corrosion resistance compared with the traditional aluminum plate fixing method.

[0022] Furthermore, the heating component includes a plurality of inductive bulbs spaced apart and / or evenly arranged, the plurality of inductive bulbs being arranged circumferentially around the axis of the housing.

[0023] The beneficial effect of adopting the above-mentioned further technical solution is that the generated heat can be more evenly distributed above the process cavity.

[0024] Furthermore, the ventilation assembly includes a plurality of vents spaced apart and / or evenly arranged, and the plurality of vents are arranged circumferentially around the axis of the housing.

[0025] The beneficial effect of adopting the above-mentioned further technical solution is that the airflow is evenly blown to the working area of ​​the plasma coil, so that the entire plasma activation process can be carried out uniformly and stably.

[0026] Compared with the prior art, the present invention has the following technical effects:

[0027] The wafer surface plasma activation equipment provided by this utility model, by setting up an inductor bulb assembly for more uniform heating, a coil arrangement for more uniform plasma activation and less interference, a ventilation assembly for more uniform heat delivery, and a water-cooling assembly for more uniform heat dissipation, when the air supply assembly outputs airflow through the air outlet, the airflow flows through the heating assembly and is heated, and then blows evenly onto the working area of ​​the plasma coil in the process cavity through the ventilation assembly, so that the plasma activation process of the wafer surface can be carried out uniformly and stably. Attached Figure Description

[0028] Figure 1 This diagram shows the external structure of the wafer surface plasma activation device according to an embodiment of the present invention.

[0029] Figure 2 This shows a front view of a wafer surface plasma activation device according to an embodiment of the present invention;

[0030] Figure 3 Show Figure 2 Cross-sectional view along the BB direction;

[0031] Figure 4Show Figure 2 Cross-sectional view along the CC direction;

[0032] Figure 5 The image shows a bottom view of the wafer surface plasma activation device according to an embodiment of the present invention.

[0033] Figure label:

[0034] 1. Water-cooled piping; 2. Water-cooled wall; 3. Plasma coil; 4. Coil mounting hardware; 5. Inductor bulb; 6. Air supply assembly; 7. Ventilation outlet. Detailed Implementation

[0035] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. Although the description of this utility model will be presented in conjunction with preferred embodiments, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of describing the utility model in conjunction with the embodiments is to cover other options or modifications that may be derived based on the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description. It should be noted that, without conflict, the embodiments and features in the embodiments of this utility model can be combined with each other.

[0036] See Figure 1-5A wafer surface plasma activation device includes a process chamber and a housing. The housing is located above the process chamber, and a plasma coil assembly is disposed within the process chamber. An air supply assembly 6, which is a fan, is located on the upper part of the housing, with its outlet facing inwards towards the housing. A ventilation assembly and a heating assembly are disposed within the housing. The heating assembly is located away from the process chamber, while the ventilation assembly is located close to the process chamber, with one end connected to the interior of the housing and the other end connected to the process chamber. A water-cooling assembly is located outside the housing, comprising a water-cooling pipe 1 and a water-cooling wall 2. The water-cooling wall 2 is disposed on the outer wall of the housing, and the water-cooling pipe 1 is disposed on the water-cooling wall 2. The air supply assembly 6 is located on the axis of the housing. The plasma coil assembly includes several sets of plasma coils 3 and coil fixing components 4. The several sets of plasma coils 3 surround... The plasma coils 3 are arranged concentrically around the axis of the housing, and the distance between each plasma coil 3 and the air supply assembly 6 is different. The coil fixing member 4 is connected to the housing and is arc-shaped. The coil fixing member 4 has several through holes for the plasma coils 3 to pass through and be fixed. The coil fixing member 4 is made of polytetrafluoroethylene. The heating assembly includes six spaced and evenly arranged inductive bulbs 5, which are arranged circumferentially around the axis of the housing. The ventilation assembly includes 36 spaced and evenly arranged vents 7, which are made of aluminum. The 36 vents 7 are arranged circumferentially around the axis of the housing and are evenly arranged above the plasma coils 3. The air supplied by the air supply assembly 6 will be evenly blown onto the working area of ​​the plasma coils 3 through these 36 vents 7, so that the entire plasma activation process can be carried out uniformly and stably.

[0037] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A wafer surface plasma activation device, characterized in that, The device includes a process cavity and a housing. The housing is located above the process cavity, and a plasma coil assembly is installed inside the process cavity. An air supply assembly is installed on the upper part of the housing, and the air outlet of the air supply assembly is arranged facing the interior of the housing. A ventilation assembly and a heating assembly are installed inside the housing. The heating assembly is located away from the process cavity, and the ventilation assembly is located close to the process cavity. One end of the ventilation assembly is connected to the interior of the housing, and the other end is connected to the process cavity.

2. The wafer surface plasma activation equipment according to claim 1, characterized in that, The exterior of the housing is equipped with a water-cooling component.

3. The wafer surface plasma activation equipment according to claim 2, characterized in that, The water-cooling assembly includes water-cooling pipes and a water-cooling wall. The water-cooling wall is disposed on the outer wall of the housing, and the water-cooling pipes are disposed on the water-cooling wall.

4. The wafer surface plasma activation apparatus according to any one of claims 1 to 3, characterized in that, The air supply assembly is located on the axis of the housing.

5. The wafer surface plasma activation equipment according to claim 4, characterized in that, The plasma coil assembly includes several sets of plasma coils and coil fixing components. The several sets of plasma coils are arranged in concentric circles around the axis of the housing, and each plasma coil is at a different distance from the air supply assembly.

6. The wafer surface plasma activation equipment according to claim 5, characterized in that, The coil fixing component is connected to the housing, the coil fixing component is arc-shaped, and the coil fixing component has several through holes.

7. The wafer surface plasma activation equipment according to claim 5, characterized in that, The coil fixing component is made of polytetrafluoroethylene.

8. The wafer surface plasma activation equipment according to claim 4, characterized in that, The heating component includes a plurality of inductive bulbs spaced apart and / or evenly arranged, and the plurality of inductive bulbs are arranged circumferentially around the axis of the housing.

9. The wafer surface plasma activation equipment according to claim 4, characterized in that, The ventilation assembly includes a plurality of vents spaced apart and / or evenly arranged, and the plurality of vents are arranged circumferentially around the axis of the housing.

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