A power module
By setting up circuit units and optimizing the layout within the power module, ensuring that the interface and pin terminal numbers correspond one-to-one, the problem of inconsistency between the third-generation semiconductor interface and the previous generation is solved, achieving a power module design that improves performance and reduces costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- PN JUNCTION SEMICON (HANGZHOU) CO LTD
- Filing Date
- 2025-01-13
- Publication Date
- 2026-05-29
AI Technical Summary
In existing technologies, the interfaces and appearances of third-generation power semiconductors are inconsistent with those of the previous generation, resulting in their performance not being fully realized and high development costs.
Design a power module that maps the circuit unit interfaces to the pin terminal numbers one by one, and sets up a rectifier bridge, braking function and three-phase inverter section in the module. Use SiC MOSFETs and alumina or silicon nitride ceramic substrates, and optimize the internal layout to maintain interface and appearance consistency.
Without altering the interface and physical dimensions, this approach fully leverages the performance of third-generation semiconductors, reduces development costs, and enables the creation of an all-in-one power semiconductor hybrid module.
Smart Images
Figure CN224305639U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to semiconductor technology, and more particularly to a power module. Background Technology
[0002] To improve product performance, some manufacturers of power modules need to use third-generation semiconductors. However, in order to shorten the development cycle of the entire system and achieve system-level cost reduction, they often require that the interface and appearance of the third-generation power semiconductors remain consistent with the previous generation. However, this requirement will, to some extent, limit the performance of the third-generation semiconductors, meaning that even with a new generation of semiconductor chips, their full potential cannot be realized.
[0003] For example, the existing technology CN202311753903.2. Utility Model Content
[0004] This invention addresses the problem that the interfaces and appearances of third-generation power semiconductors in the prior art are not consistent with those of the previous generation, and provides a power module.
[0005] To solve the above-mentioned technical problems, the present invention provides a solution through the following technical method:
[0006] A power module includes a power module body with several numbered pin terminals; the power module body contains circuit units, the interfaces of which are numbered, and the interface numbers of the circuit units correspond one-to-one with the pin terminal numbers.
[0007] Preferably, the circuit unit includes a first ceramic liner area, a second ceramic liner area, and a third ceramic liner area; the first ceramic liner area is the rectifier bridge part of the power module, and the second and third ceramic liner areas contain the braking function part and the three-phase inverter part of the power module.
[0008] Preferably, the first ceramic substrate region includes diodes D1, D2, D3, D4, D5, D6 and gate resistor R1;
[0009] The second ceramic substrate area includes MOSFETs T1, T2, T4, T5, and T6, an NTC thermistor, gate resistors R2, R3, and R4; the third ceramic substrate area includes diode D7, MOSFETs T0 and T3, gate resistors R5, R6, and R7.
[0010] Preferably, the rectifier bridge functional area of this power module is equipped with diodes D1, D2, D3, D4, D5, and D6; one end of diodes D1 and D4 is connected to interface number 1; one end of diodes D2 and D5 is connected to interface number 2; one end of diodes D3 and D6 is connected to interface number 3; the other end of diodes D1, D2, and D3 is connected to interface number 21; and the other end of diodes D4, D5, and D6 is connected to interface number 23.
[0011] Preferably, the braking function area includes diode D7 and MOSFET T0; one end of diode D7 is numbered 22 and the other end is numbered 7; the four ends of MOSFET T0 are numbered 7, 14, 10 and 24 respectively; one end of the thermistor NTC is numbered 8 and the other end is numbered 9.
[0012] Preferably, the three-phase inverter region includes MOSFETs T1, T2, T3, T4, T5, and T6. The four terminals of MOSFET T1 are numbered as follows: interface number 22, interface number 4, interface number 20, and interface number 19. The four terminals of MOSFET T2 are numbered as follows: interface number 22, interface number 5, interface number 18, and interface number 17. The four terminals of MOSFET T3 are numbered as follows: interface number 22, interface number 6, interface number 16, and interface number 15. The four terminals of MOSFET T4 are numbered as follows: interface number 4, interface number 13, interface number 24, and interface number 10. The four terminals of MOSFET T5 are numbered as follows: interface number 24, interface number 5, interface number 12, and interface number 24. The four terminals of MOSFET T6 are numbered as follows: interface number 24, interface number 6, interface number 11, and interface number 10.
[0013] Preferably, a gate resistor R7 is provided between MOSFET T0 and interface number 14, a gate resistor R4 is provided between MOSFET T1 and interface number 20, a gate resistor R5 is provided between MOSFET T2 and interface number 18, a gate resistor R6 is provided between MOSFET T3 and interface number 16, a gate resistor R1 is provided between MOSFET T4 and interface number 13, a gate resistor R2 is provided between MOSFET T5 and interface number 12, and a gate resistor R3 is provided between MOSFET T6 and interface number 11.
[0014] Preferably, the ceramic material of the lining plates in the first, second, and third ceramic lining plate areas includes alumina or silicon nitride; and the ceramic material of the lining plates in the second and third ceramic lining plate areas is the same.
[0015] Preferably, diodes D1, D2, D3, D4, D5, and D6 are fast-switching diodes; diode D7 is a Schottky barrier diode.
[0016] As a priority, the specifications of MOSFETs T1, T2, T3, T4, T5, and T6 in SiC MOSFETs are consistent, while the specifications of MOSFET T0 are different from those of MOSFETs T1, T2, T3, T4, T5, and T6.
[0017] This utility model, by adopting the above technical solution, has the following significant technical effects:
[0018] This invention integrates a 3-phase frequency converter circuit, a diode bridge circuit, and a braking circuit within a circuit unit, with the interfaces of the circuit unit corresponding one-to-one with the power module numbers, while also balancing performance requirements and cost reduction needs.
[0019] This invention presents an all-in-one power semiconductor hybrid module with optimized internal layout, aiming to maximize the performance of third-generation semiconductors while minimizing development costs, provided that the size and appearance of the client interface are not altered. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of the power module body structure of Embodiment 1 of this utility model.
[0021] Figure 2 This is a schematic diagram of the power module circuit unit structure of this utility model.
[0022] Figure 3 This is a schematic diagram of the internal layout structure of the power module of this utility model.
[0023] Figure 4 This is a schematic diagram of the structure of the first ceramic liner area of this utility model.
[0024] Figure 5 This is a schematic diagram of the structure of the second ceramic liner area of this utility model.
[0025] Figure 6 This is a schematic diagram of the structure of the third ceramic liner area of this utility model. Detailed Implementation
[0026] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.
[0027] Example 1
[0028] A power module includes a power module body with several numbered pin terminals; the power module body contains circuit units, the interfaces of which are numbered, and the interface numbers of the circuit units correspond one-to-one with the pin terminal numbers.
[0029] The circuit unit includes a first ceramic liner area which is the rectifier bridge part of the power module, and a second ceramic liner area and a third ceramic liner area which contain the braking function part and the three-phase inverter part of the power module.
[0030] The first ceramic substrate area includes diodes D1, D2, D3, D4, D5, D6 and gate resistor R1;
[0031] The second ceramic liner area includes MOSFETs T1, T2, T4, T5, and T6, an NTC thermistor, gate resistors R2, R3, and R4.
[0032] The third ceramic substrate area includes diode D7, MOSFET T0, MOSFET T3, gate resistor R5, gate resistor R6, and gate resistor R7.
[0033] The rectifier bridge functional area of this power module is equipped with diodes D1, D2, D3, D4, D5, and D6. One end of diodes D1 and D4 is connected to interface number 1; one end of diodes D2 and D5 is connected to interface number 2; one end of diodes D3 and D6 is connected to interface number 3; the other end of diodes D1, D2, and D3 is connected to interface number 21; and the other end of diodes D4, D5, and D6 is connected to interface number 23.
[0034] The braking function area includes diode D7 and MOSFET T0; one end of diode D7 is connected to interface number 22, and the other end is connected to interface number 7. The four terminals of MOSFET T0 are connected to interfaces 7, 14, 10, and 24, respectively. One end of the thermistor NTC is connected to interface number 8, and the other end is connected to interface number 9.
[0035] The three-phase inverter area includes MOSFETs T1, T2, T3, T4, T5, and T6; the four terminals of MOSFET T1 are numbered as interface number 22, interface number 4, interface number 20, and interface number 19, respectively; the four terminals of MOSFET T2 are numbered as interface number 22, interface number 5, interface number 18, and interface number 17, respectively.
[0036] The four terminals of MOSFET T3 are numbered as follows: interface number 22, interface number 6, interface number 16, and interface number 15. The four terminals of MOSFET T4 are numbered as follows: interface number 4, interface number 13, interface number 24, and interface number 10.
[0037] The four terminals of MOSFET T5 are numbered as follows: interface number 24, interface number 5, interface number 12, and interface number 24. The four terminals of MOSFET T6 are numbered as follows: interface number 24, interface number 6, interface number 11, and interface number 10.
[0038] A gate resistor R7 is set between MOSFET T0 and interface number 14; a gate resistor R4 is set between MOSFET T1 and interface number 20; a gate resistor R5 is set between MOSFET T2 and interface number 18; a gate resistor R6 is set between MOSFET T3 and interface number 16; a gate resistor R1 is set between MOSFET T4 and interface number 13; a gate resistor R2 is set between MOSFET T5 and interface number 12; and a gate resistor R3 is set between MOSFET T6 and interface number 11.
[0039] The ceramic material of the first ceramic liner is alumina; and the ceramic material of the second and third ceramic liner areas is silicon nitride.
[0040] Diodes D1, D2, D3, D4, D5, and D6 are fast-switching diodes; diode D7 is a Schottky barrier diode.
[0041] In SiC MOSFETs, MOSFETs T1, T2, T3, T4, T5, and T6 have the same specifications, while MOSFET T0 has different specifications from MOSFETs T1, T2, T3, T4, T5, and T6.
[0042] Example 2
[0043] Based on Example 1, the ceramic material of the liner plate in the first ceramic liner plate area of this example is silicon nitride, that is, all ceramic materials are consistent and are all silicon nitride.
[0044] Example 3
[0045] Based on the above embodiments, in this embodiment, diodes D1, D2, D3, D4, D5, D6, and D7 are Schottky barrier diodes.
Claims
1. A power module, comprising a power module body, wherein the power module body is provided with a plurality of numbered pin terminals; characterized in that, The power module body contains a circuit unit, and the interface of the circuit unit is numbered, and the interface number of the circuit unit corresponds one-to-one with the pin terminal number; the circuit unit includes a first ceramic liner area, a second ceramic liner area and a third ceramic liner area; the first ceramic liner area is the rectifier bridge part of the module, and the second ceramic liner area and the third ceramic liner area constitute the braking function part and the three-phase inverter part of the module.
2. A power module according to claim 1, characterized in that, The first ceramic substrate area includes diodes D1, D2, D3, D4, D5, D6 and gate resistor R1; The second ceramic liner area includes MOSFETs T1, T2, T4, T5, and T6, an NTC thermistor, gate resistors R2, R3, and R4. The third ceramic substrate area includes diode D7, MOSFET T0, MOSFET T3, gate resistor R5, gate resistor R6, and gate resistor R7.
3. A power module according to claim 1, characterized in that, The rectifier bridge section includes diodes D1, D2, D3, D4, D5, and D6, and a gate resistor R1. One end of diodes D1 and D4 is connected to interface number 1; one end of diodes D2 and D5 is connected to interface number 2; one end of diodes D3 and D6 is connected to interface number 3; the other end of diodes D1, D2, and D3 is connected to interface number 21; and the other end of diodes D4, D5, and D6 is connected to interface number 23.
4. A power module according to claim 1, characterized in that, The braking function area includes diode D7 and MOSFET T0; one end of diode D7 is numbered 22 and the other end is numbered 7; the four ends of MOSFET T0 are numbered 7, 14, 10 and 24 respectively; one end of the thermistor NTC is numbered 8 and the other end is numbered 9.
5. A power module according to claim 1, characterized in that, The three-phase inverter region includes MOSFETs T1, T2, T3, T4, T5, and T6. MOSFET T1 is numbered with terminals 22, 4, 20, and 19, respectively; MOSFET T2 is numbered with terminals 22, 5, 18, and 17, respectively; and MOSFET T3 is numbered with terminals 22, 6, 16, and 15, respectively. The four terminals of MOSFET T4 are numbered as follows: terminal 4, terminal 13, terminal 24, and terminal 10. The four terminals of MOSFET T5 are numbered as follows: terminal 24, terminal 5, terminal 12, and terminal 24. The four terminals of MOSFET T6 are numbered as follows: terminal 24, terminal 6, terminal 11, and terminal 10.
6. A power module according to claim 1, characterized in that, A gate resistor R7 is set between MOSFET T0 and interface number 14; a gate resistor R4 is set between MOSFET T1 and interface number 20; a gate resistor R5 is set between MOSFET T2 and interface number 18; a gate resistor R6 is set between MOSFET T3 and interface number 16; a gate resistor R1 is set between MOSFET T4 and interface number 13; a gate resistor R2 is set between MOSFET T5 and interface number 12; and a gate resistor R3 is set between MOSFET T6 and interface number 11.
7. A power module according to claim 1, characterized in that, The ceramic lining materials of the first, second, and third ceramic lining areas include alumina or silicon nitride; and the ceramic lining materials of the second and third ceramic lining areas are the same.
8. A power module according to claim 1, characterized in that, Diodes D1, D2, D3, D4, D5, and D6 are fast-switching diodes; diode D7 is a Schottky barrier diode.
9. A power module according to claim 1, characterized in that, In SiC MOSFETs, MOSFETs T1, T2, T3, T4, T5, and T6 have the same specifications, while MOSFET T0 has different specifications from MOSFETs T1, T2, T3, T4, T5, and T6.