Induction heating epitaxial furnace for growing epitaxial layer on silicon carbide substrate sheet

Abstract

The utility model relates to the technical field of semiconductor material preparation, specifically discloses the inductive heating epitaxial furnace of silicon carbide substrate piece growth epitaxial layer, including support plate, the bottom surface fixed connection of support plate has four support rods, the outer surface fixed connection of support plate has rotary mechanism, the outer surface fixed connection of rotary mechanism has base, the upper surface of base is seted up and places the groove through the pressure sensor in the heating assembly and senses the silicon carbide placed in the placing groove, subsequently passes through the controller control heater operation, transports the heat to the heating pipeline, carries out heating treatment to the heating chamber through the heating pipeline, and then realizes the heating treatment to the silicon carbide substrate piece growth epitaxial layer, through the rotary mechanism drive the silicon carbide rotation placed in the placing groove on the base, sprays the raw material on the silicon carbide again through the growth epitaxial layer mechanism, realizes the silicon carbide substrate piece growth epitaxial layer.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material preparation technology, and specifically discloses an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates. Background Technology

[0002] Silicon carbide is a compound material composed of silicon and carbon. High-purity silicon carbide is commonly used to manufacture semiconductor devices such as diodes and transistors.

[0003] Currently, silicon carbide is grown by epitaxial growth technology to deposit a single-crystal silicon carbide film with the same crystal structure as the substrate. However, during epitaxial growth, silicon carbide needs to be heated. The current heating method requires pressing a control button to control the heating, which cannot achieve the effect of induction heating. Therefore, an induction heating epitaxial furnace is needed to solve this problem. Utility Model Content

[0004] This invention proposes an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates. The furnace uses a pressure sensor in the heating assembly to sense the silicon carbide placed in the placement tank. The controller then controls the heater to transfer heat to the heating pipe, thereby heating the silicon carbide substrate during epitaxial layer growth. A rotating mechanism drives the silicon carbide placed in the placement tank on the base to rotate, and the epitaxial layer growth mechanism sprays the raw material onto the silicon carbide, thus achieving the growth of epitaxial layers on the silicon carbide substrate.

[0005] This invention is implemented as follows: an induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate includes a support plate. Four support rods are fixedly connected to the bottom surface of the support plate. A rotating mechanism is fixedly connected to the outer surface of the support plate. A base is fixedly connected to the outer surface of the rotating mechanism. A placement groove is formed on the upper surface of the base. A heating chamber is fixedly connected to the outer surface of the support plate. Heating components are provided on the outer surface of the heating chamber, the inner wall of the heating chamber, and the inner wall of the placement groove. A support frame is fixedly connected to the outer surface of the support plate. An epitaxial layer growth mechanism is provided on the outer surface of the support frame, the inner wall of the support frame, and the outer surface of the heating chamber.

[0006] As an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates according to this utility model, a display panel is fixedly connected to the upper surface of the heating chamber, and a sealing door is hinged to the front of the heating chamber via a hinge.

[0007] As an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates according to this utility model, the rotating mechanism includes a motor, the outer surface of the motor is fixedly connected to the bottom surface of the support plate, the output end of the motor is fixedly connected to a rotating shaft, and the end of the rotating shaft away from the motor is fixedly connected to the bottom surface of the base.

[0008] As an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates according to the present invention, the heating assembly includes a pressure sensor, which is disposed on the inner bottom wall of the placement tank.

[0009] As an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates according to this utility model, a heater is fixedly connected to the upper surface of the heating chamber, and a heating pipe is fixedly connected to the inner wall of the heating chamber. One end of the heating pipe is fixedly connected to the output end of the heater.

[0010] As an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates according to this utility model, the epitaxial layer growth mechanism includes an air pump, the outer surface of which is fixedly connected to the outer surface of a support frame, and the output end of the air pump is fixedly connected to an air supply pipe.

[0011] As an induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates according to the present invention, a nozzle is fixedly connected to the outer surface of the gas supply pipe, a flexible tube is fixedly connected to one end of the nozzle, and the outer surface of the flexible tube is fixedly connected to the outer surface of the support frame.

[0012] The beneficial effects of this utility model are:

[0013] 1. The pressure sensor in the heating assembly senses the silicon carbide placed in the placement tank, and then the controller controls the heater to operate, which transfers heat to the heating pipe. The heating pipe heats the heating chamber, thereby achieving the heating treatment during the growth of the epitaxial layer on the silicon carbide substrate, which facilitates the control of the heating chamber.

[0014] 2. The silicon carbide placed in the tank on the base is rotated by a rotating mechanism, and the raw material is sprayed onto the silicon carbide by the epitaxial layer growth mechanism to achieve the growth of an epitaxial layer on the silicon carbide substrate. Attached Figure Description

[0015] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn to scale.

[0016] Figure 1 This is a front view of the induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to this invention.

[0017] Figure 2 This is a side cross-sectional view of the induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to this invention.

[0018] Figure 3 This is a side view of the induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate, according to the present invention.

[0019] Figure 4 This is a top view of the induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate, according to the present invention.

[0020] The markings in the diagram are: 1. Support plate; 2. Support rod; 3. Rotation mechanism; 301. Motor; 302. Rotating shaft; 4. Base; 5. Placement slot; 6. Heating assembly; 601. Pressure sensor; 602. Heater; 603. Heating pipe; 7. Heating chamber; 8. Support frame; 9. Epitaxial layer growth mechanism; 901. Air pump; 902. Gas delivery pipe; 903. Nozzle; 904. Hose; 10. Display panel; 11. Sealing door. Detailed Implementation

[0021] The present invention will be further described below with reference to the accompanying drawings and specific embodiments to aid in understanding its content. Unless otherwise specified, the methods used in this invention are conventional methods; the raw materials and apparatus used, unless otherwise specified, are conventional commercially available products.

[0022] Please see Figure 1-4 An induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate includes a support plate 1. Four support rods 2 are fixedly connected to the bottom surface of the support plate 1. A rotating mechanism 3 is fixedly connected to the outer surface of the support plate 1. A base 4 is fixedly connected to the outer surface of the rotating mechanism 3. A placement groove 5 is opened on the upper surface of the base 4. A heating chamber 7 is fixedly connected to the outer surface of the support plate 1. Heating components 6 are provided on the outer surface of the heating chamber 7, the inner wall of the heating chamber 7, and the inner wall of the placement groove 5. A support frame 8 is fixedly connected to the outer surface of the support plate 1. An epitaxial layer growth mechanism 9 is provided on the outer surface of the support frame 8, the inner wall of the support frame 8, and the outer surface of the heating chamber 7.

[0023] In this embodiment, the support plate 1 is supported by the support rod 2, which increases the stability of the epitaxial furnace.

[0024] As a technical optimization of this utility model, a display panel 10 is fixedly connected to the upper surface of the heating chamber 7, and a sealing door 11 is hinged to the front of the heating chamber 7.

[0025] In this embodiment: the internal temperature is sensed by a temperature sensor in the heating chamber 7, and the sensed temperature is displayed on the display panel 10, so that personnel can know the heating temperature. The sealing door 11 seals the heating chamber 7 to prevent the internal heat from being lost quickly during heating.

[0026] As a technical optimization of this utility model, the rotating mechanism 3 includes a motor 301, the outer surface of the motor 301 is fixedly connected to the bottom surface of the support plate 1, the output end of the motor 301 is fixedly connected to a rotating shaft 302, and the end of the rotating shaft 302 away from the motor 301 is fixedly connected to the bottom surface of the base 4.

[0027] In this embodiment: when the rotating mechanism 3 is running, the motor 301 drives the rotating shaft 302 to rotate, and the rotating shaft 302 in turn drives the silicon carbide in the base 4 to rotate, thereby improving the efficiency of growing epitaxial layers on the silicon carbide substrate.

[0028] As a technical optimization of this utility model, the heating component 6 includes a pressure sensor 601, which is disposed on the inner bottom wall of the placement groove 5. A heater 602 is fixedly connected to the upper surface of the heating chamber 7, and a heating pipe 603 is fixedly connected to the inner wall of the heating chamber 7. One end of the heating pipe 603 is fixedly connected to the output end of the heater 602.

[0029] This is a technical optimization solution of the present utility model.

[0030] In this embodiment: the pressure of silicon carbide is sensed by the pressure sensor 601, and then the heater 602 is controlled by the controller to operate. The heater 602 delivers heat to the heating pipe 603, thereby realizing the heating of the heating chamber 7 by the heating pipe 603.

[0031] As a technical optimization of this utility model, the epitaxial layer growth mechanism 9 includes an air pump 901. The outer surface of the air pump 901 is fixedly connected to the outer surface of the support frame 8. The output end of the air pump 901 is fixedly connected to an air supply pipe 902. The outer surface of the air supply pipe 902 is fixedly connected to a nozzle 903. One end of the nozzle 903 is fixedly connected to a hose 904. The outer surface of the hose 904 is fixedly connected to the outer surface of the support frame 8.

[0032] In this embodiment: gas is delivered to the gas pipeline 902 by the gas pump 901, and then the raw material sprayed into the gas pipeline 902 by the nozzle 903 is sprayed onto the silicon carbide, and in conjunction with the heating of the silicon carbide, an epitaxial layer is grown on the silicon carbide substrate.

[0033] The working principle and usage process of this utility model are as follows: First, silicon carbide is placed in the placement groove 5 of the base 4. After placement, the sealing door 11 is quickly closed. Then, the pressure sensor 601 in the heating assembly 6 senses the pressure of the silicon carbide. The controller then controls the heater 602 to operate, generating heat. This heat is transported through the heating pipe 603 to heat the heating chamber 7. During heating, the air pump 901 in the epitaxial layer growth mechanism 9 delivers gas, which, along with the nozzle 903, transports the raw material into the gas delivery pipe 902. The raw material is then blown onto the rotating silicon carbide, thereby growing an epitaxial layer on the silicon carbide substrate.

[0034] In the description of this utility model, it should be understood that the terms "left", "right", "up", "down", "top", "bottom", "front", "back", "inner", "outer", "back", "middle", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0035] However, the above description is only a specific embodiment of this utility model and should not be construed as limiting the scope of implementation of this utility model. Therefore, any substitution of equivalent components or equivalent changes and modifications made in accordance with the scope of protection of this utility model should still fall within the scope of the claims of this utility model.

Claims

1. An induction heating epitaxial furnace for growing epitaxial layers on silicon carbide substrates, characterized in that: The system includes a support plate (1), four support rods (2) are fixedly connected to the bottom surface of the support plate (1), a rotating mechanism (3) is fixedly connected to the outer surface of the support plate (1), a base (4) is fixedly connected to the outer surface of the rotating mechanism (3), a placement groove (5) is provided on the upper surface of the base (4), a heating chamber (7) is fixedly connected to the outer surface of the support plate (1), heating components (6) are provided on the outer surface of the heating chamber (7), the inner wall of the heating chamber (7) and the inner wall of the placement groove (5), a support frame (8) is fixedly connected to the outer surface of the support plate (1), and an epitaxial layer growth mechanism (9) is provided on the outer surface of the support frame (8), the inner wall of the support frame (8) and the outer surface of the heating chamber (7).

2. The induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to claim 1, characterized in that: A display panel (10) is fixedly connected to the upper surface of the heating chamber (7), and a sealing door (11) is hinged to the front of the heating chamber (7).

3. The induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to claim 1, characterized in that: The rotating mechanism (3) includes a motor (301), the outer surface of the motor (301) is fixedly connected to the bottom surface of the support plate (1), the output end of the motor (301) is fixedly connected to a rotating shaft (302), and the end of the rotating shaft (302) away from the motor (301) is fixedly connected to the bottom surface of the base (4).

4. The induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to claim 1, characterized in that: The heating assembly (6) includes a pressure sensor (601), which is located on the inner bottom wall of the placement groove (5).

5. The induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to claim 4, characterized in that: A heater (602) is fixedly connected to the upper surface of the heating chamber (7), and a heating pipe (603) is fixedly connected to the inner wall of the heating chamber (7). One end of the heating pipe (603) is fixedly connected to the output end of the heater (602).

6. The induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to claim 1, characterized in that: The epitaxial layer growth mechanism (9) includes an air pump (901), the outer surface of which is fixedly connected to the outer surface of the support frame (8), and the output end of which is fixedly connected to an air supply pipe (902).

7. The induction heating epitaxial furnace for growing epitaxial layers on a silicon carbide substrate according to claim 6, characterized in that: A nozzle (903) is fixedly connected to the outer surface of the gas pipeline (902), and a hose (904) is fixedly connected to one end of the nozzle (903). The outer surface of the hose (904) is fixedly connected to the outer surface of the support frame (8).

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