A PNP type crystal triode
By using a PNP transistor structure and incorporating a sliding groove, a limiting groove, and an insulating ring, the problem of requiring an additional level conversion circuit for existing transistors is solved. This achieves stable current transmission and circuit simplification, improving reliability and performance.
CN224319784UActive Publication Date: 2026-06-02SHANDONG HENGXIN ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANDONG HENGXIN ELECTRONICS CO LTD
- Filing Date
- 2025-05-06
- Publication Date
- 2026-06-02
Smart Images
Figure CN224319784U_ABST
Abstract
The utility model relates to triode technical field discloses a PNP type crystal triode, including base, the inside bottom fixedly connected with the backing pad of base, the top four corner places of base all are set up with sliding slot, the inside one side of multiple sliding slot all are connected with the limit slot, the top right side fixedly connected with P type collector of backing pad, the top fixedly connected with N type base of backing pad, the top left side fixedly connected with P type emitter of backing pad, the adjacent side fixedly connected with the connection knot of P type emitter and P type collector. In the utility model, through P type collector, N type base and P type emitter, under the bias voltage, emitter hole diffusion, partial recombination forms base current, most of the collector collection forms collector current, realizes in the circuit that needs to flow from low potential to high potential current, does not need additional level conversion circuit.
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