Red mini high yield light emitting diode

Abstract

The utility model belongs to the technical field of light emitting diode, specifically relates to a red light mini high yield light emitting diode, including substrate and epitaxial layer on the substrate, the substrate is GaAs substrate and sapphire flat piece key bond and forms composite substrate, the composite substrate is placed in graphite tray. The utility model changes the composite substrate of sapphire and GaAs from the original pure GaAs substrate, and the advantages are: 1, reduce the use of GaAs substrate crystal, directly reduce the cost, 2, the sapphire hardness in the composite substrate is high, can effectively improve the warping of epitaxial wafer, 3, the composite substrate is used with graphite tray and can improve the edge yield of epitaxial.

Description

Technical Field

[0001] This utility model belongs to the field of light-emitting diode technology, specifically relating to a red Mini high-yield light-emitting diode. Background Technology

[0002] A red Mini LED is a semiconductor light-emitting device that uses Mini LED technology to emit red light. Combining the advantages of Mini LED technology with the characteristics of red light, this device has wide applications in displays, lighting, and other specific fields, enabling high-resolution displays, accurate color reproduction, and efficient lighting.

[0003] In the MOCVD process, the graphite disk has specific grooves or structures that can precisely place the substrate for growing the epitaxial layer of red Mini LEDs. During the operation of the MOCVD equipment, it can ensure the stability of the substrate position and provide a good foundation for subsequent epitaxial growth.

[0004] The existing process for red Mini LEDs involves directly growing an epitaxial layer on a pure GaAs wafer. However, this process has the following problems: 1. GaAs material has low hardness, resulting in significant warping after epitaxial growth; 2. The yield at the epitaxial edges is relatively low; 3. The cost of pure GaAs substrates is high. Utility Model Content

[0005] To address the problems in the background technology, this utility model provides a red Mini high-yield light-emitting diode.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A red-light Mini high-yield light-emitting diode includes a substrate and an epitaxial layer grown on the substrate. The substrate is a composite substrate formed by bonding a GaAs substrate and a sapphire flat sheet, and the composite substrate is placed in a graphite disk.

[0008] Preferably, the GaAs substrate has a thickness of 180~220um and the sapphire wafer has a thickness of 600~700um.

[0009] Preferably, the bonding layer is made of SiO2 or Al2O3 and has a thickness of 1.5~2.5 μm.

[0010] Preferably, the graphite disk has a depth of 780~920um, which matches the composite substrate.

[0011] Compared with the prior art, the present invention has the following beneficial effects:

[0012] This invention changes the original pure GaAs substrate to a composite substrate of sapphire and GaAs. Advantages: 1. Reduces the use of GaAs substrate crystals, directly reducing costs; 2. The high hardness of sapphire in the composite substrate can effectively improve epitaxial wafer warpage; 3. The composite substrate, when used with a graphite disk, can improve the yield of epitaxial edges. Attached Figure Description

[0013] Figure 1 This is a structural diagram of an existing graphite disk and GaAs substrate.

[0014] Figure 2 This is a structural diagram of the graphite disk and composite substrate of this utility model.

[0015] In the figure: 10, graphite disk; 20, GaAs substrate; 30, bonding layer; 40, sapphire flat sheet. Detailed Implementation

[0016] To further illustrate the technical means and effects adopted by this utility model in order to achieve the intended utility model purpose, the following detailed description of the specific implementation methods, structure, features and effects of this utility model is provided in conjunction with the accompanying drawings and preferred embodiments.

[0017] like Figure 1 As shown, the existing substrate used to manufacture red Mini LEDs is a GaAs substrate with a thickness of 350 μm, which is placed in a graphite disk with a depth of 420 μm.

[0018] like Figure 2 As shown, the present invention discloses a red Mini high-yield light-emitting diode, wherein the substrate is a composite substrate composed of GaAs substrate 20, sapphire flat sheet 40 and bonding layer 30, and the composite substrate is placed in graphite disk 10.

[0019] The GaAs substrate 20 is thinned from 350µm to 200µm; the sapphire wafer 40 has a thickness of 650µm; the bonding layer 30 uses SiO2 or Al2O3 and has a thickness of 2µm; the graphite disk 10 has a depth of 850µm.

[0020] With the structure of this utility model, the amount of GaAs substrate crystal used is reduced by 42.8%; the epitaxial BOM value is reduced by 60%; and the height difference between the disk groove and the substrate is close to horizontal.

Claims

1. A red-light Mini high-yield light-emitting diode, comprising a substrate and an epitaxial layer grown on the substrate, characterized in that: The substrate is a composite substrate formed by bonding a GaAs substrate and a sapphire flat sheet, and the composite substrate is placed in a graphite disk; the thickness of the GaAs substrate is 180~220um, the thickness of the sapphire flat sheet is 600~700um, and the depth of the graphite disk is 780~920um, which matches the composite substrate.

2. The red-light Mini high-yield light-emitting diode as described in claim 1, characterized in that: The bonding layer is made of SiO2 or Al2O3 and has a thickness of 1.5~2.5um.

Images