A laser debonding apparatus

Abstract

The utility model relates to chip manufacturing technology field, concretely refers to a laser stripping equipment, including base, carrier assembly and laser system, be equipped with marble stand on the base, be equipped with marble base on marble stand, the one side of marble base is equipped with reference board, is equipped with track and driver on reference board, is equipped with the Z axis platform that can move up and down on track, and driver drive connection Z axis platform, be equipped with lifting shaping optical path on Z axis platform, and carrier assembly is located below Z axis platform, the laser system includes laser and optical path module, and laser is set up in pairs through optical path module and lifting shaping optical path, the utility model discloses reasonable structure, and the laser beam is focused wafer inside through the surface of silicon carbide, and the path scanning is automatically planned, forms the modified layer at the required depth to realize stripping wafer, avoids the influence of tool wear and mechanical stress, reduces the subsequent lapping polishing process, saves time and material cost.

Description

Technical Field

[0001] This utility model relates to the field of chip manufacturing technology, specifically to a laser wafer stripping device. Background Technology

[0002] SiC possesses excellent physical properties, significantly improving the performance and energy efficiency of microwave RF and power electronic devices. However, the high substrate cost limits its widespread application. Currently, the main methods used in the SiC dicing industry are slurry wire cutting and diamond wire cutting. Existing wire cutting technologies have high loss rates and excessively long processing times. For example, in slurry wire cutting, up to 40% of the SiC ingot is wasted as dust. Furthermore, the high-speed movement of the cutting wire causes 20–50 μm of roughness and surface / subsurface structural damage, requiring coarse grinding processes to remove these surface irregularities. This results in a total material loss of 30%–50% for SiC multi-wire dicing technology. Therefore, existing technologies require further improvement and development. Utility Model Content

[0003] The purpose of this invention is to address the shortcomings and deficiencies of existing technologies by providing a laser stripping device with a reasonable structure, high processing efficiency, and low wear.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] The present invention discloses a laser stripping device, comprising a base, a carrier assembly, and a laser system. The base has a marble column, and a marble platform is mounted on the marble column. A reference plate is located on one side of the marble platform, and a track and a driver are mounted on the reference plate. A Z-axis platform, movable vertically along the track, is connected to the Z-axis platform via the driver. A lifting and shaping optical path is provided on the Z-axis platform, and the carrier assembly is located below the Z-axis platform. The laser system includes a laser and an optical path module, with the laser paired with the lifting and shaping optical path via the optical path module.

[0006] According to the above scheme, the optical path module includes a first shaping component, a reflector, and a second shaping component. The first shaping component and the second shaping component are disposed on the upper surface of the marble base, and a beam sealing element is connected between the first shaping component and the second shaping component. The laser is disposed on one side of the first shaping component and is connected to the first shaping component through the reflector. The second shaping component is paired with the lifting shaping optical path.

[0007] According to the above scheme, lasers are provided on both sides of the first shaping component, and the two lasers are respectively connected to the first shaping component through corresponding reflectors.

[0008] According to the above scheme, a height measuring instrument is installed on the Z-axis platform.

[0009] According to the above scheme, the Z-axis platform is equipped with at least two sets of visual locators.

[0010] According to the above scheme, the carrier component includes an X-axis linear platform, which is fixedly connected to the base; the X-axis linear platform is provided with a Y-axis linear platform, the Y-axis linear platform is provided with a DD rotary platform, and the DD rotary platform is provided with a ceramic adsorption stage.

[0011] According to the above scheme, a laser power meter is provided on one side of the ceramic adsorption stage, and the laser power meter is connected to the Y-axis linear platform through a bracket.

[0012] The advantages of this invention are as follows: This invention has a reasonable structure, which focuses the laser beam through the surface of silicon carbide into the interior of the wafer, automatically plans the scanning path, and forms a modified layer at the required depth, thereby achieving wafer stripping. There are no cuts on the wafer surface, avoiding the effects of tool wear and mechanical stress. Therefore, it can achieve high processing accuracy on the wafer surface, while reducing the subsequent grinding and polishing processes, saving time and material costs. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0014] Figure 2 This is a schematic diagram of the reference plate and the lifting and shaping optical path structure of this utility model;

[0015] Figure 3 This is a schematic diagram of the laser system structure of this utility model;

[0016] Figure 4 This is a schematic diagram of the carrier component structure of this utility model.

[0017] In the picture:

[0018] 1. Base; 2. Reference plate; 3. Lifting and shaping optical path; 4. Laser; 11. Marble column; 12. Marble base; 13. X-axis linear platform; 14. Y-axis linear platform; 15. DD rotary platform; 16. Ceramic adsorption stage; 17. Laser power meter; 21. Track; 22. Driver; 23. Z-axis platform; 24. Altimeter; 25. Visual locator; 41. First shaping component; 42. Reflector; 43. Second shaping component; 44. Beam seal. Detailed Implementation

[0019] The technical solution of this utility model will be described below with reference to the accompanying drawings and embodiments.

[0020] like Figure 1-4As shown, the laser stripping device of this utility model includes a base 1, a carrier assembly, and a laser system. The base 1 is provided with a marble column 11, and a marble platform 12 is provided on the marble column 11. A reference plate 2 is provided on one side of the marble platform 12. A track 21 and a driver 22 are provided on the reference plate 2. A Z-axis platform 23 that can move up and down along the track 21 is provided. The driver 22 is connected to the Z-axis platform 23. A lifting and shaping optical path 3 is provided on the Z-axis platform 23. The carrier assembly is located below the Z-axis platform 23. The laser system includes a laser 4 and an optical path module. The laser 4 is paired with the lifting and shaping optical path 3 through the optical path module. The laser 4 forms a laser beam through the optical path module and the lifting and shaping optical path 3. The laser beam acts on the silicon carbide ingot on the carrier assembly, allowing it to penetrate the surface of the silicon carbide and focus inside the wafer. It automatically plans a scanning path to form a modified layer at the required depth, thereby achieving wafer stripping. The wafer surface has no cuts, avoiding the effects of tool wear and mechanical stress. Therefore, it can achieve high processing precision on the wafer surface, while reducing subsequent grinding and polishing processes, saving time and material costs. It is understood that this invention preferably uses marble columns 11 and marble bases 12 as the reference platform for the equipment. Marble material has high rigidity and non-deformation properties, thus maintaining precision. Even at high temperatures, it will not experience thermal expansion and contraction, thereby ensuring the continuity and stability of precision.

[0021] Specifically, the optical path module includes a first shaping component 41, a reflector 42, and a second shaping component 43. The first and second shaping components 41 and 43 are disposed on the upper surface of the marble base 12, and a beam seal 44 connects them. The laser 4 is located on one side of the first shaping component 41 and is connected to it via the reflector 42. The second shaping component 43 is paired with the lifting shaping optical path 3. During processing, the laser 4 emits a laser beam, which is refracted by the emitter 42 and focused by the first shaping component 41, then input to the second shaping component 43 via the beam seal 44. It is understood that the first and second shaping components 41 and 43 are disposed on the upper surface of the marble base 12, while the lifting shaping optical path 3 is disposed on the Z-axis platform 23. The second shaping component 43, while focusing the laser beam, can also refract it to allow the laser beam to enter the lifting shaping optical path below.

[0022] Furthermore, the lifting and shaping optical path 3 refocuses the laser beam to precisely control the laser beam to pass through the surface of silicon carbide and focus inside the wafer, forming a modified layer at the required depth to achieve wafer stripping.

[0023] Furthermore, lasers 4 are provided on both sides of the first shaping component 41, and the two lasers 4 are respectively connected to the first shaping component 41 through corresponding reflectors 42. This invention requires two laser beams during processing, each provided by a different laser beam with different energies from the two lasers 4.

[0024] Preferably, the Z-axis platform 23 is equipped with a height measuring instrument 24. Before processing, the height measuring instrument 24 first detects the height of the ingot on the carrier assembly, and then controls the Z-axis platform 23 to move to the corresponding height. Furthermore, the Z-axis platform 23 is equipped with at least two sets of vision locators 25. The vision locators 25 position the product, and then the carrier assembly moves the ingot to the starting processing position to begin processing.

[0025] It is understood that the carrier assembly includes an X-axis linear platform 13, which is fixedly connected to the base 1; a Y-axis linear platform 14 is mounted on the X-axis linear platform 13, a DD rotary platform 15 is mounted on the Y-axis linear platform 14, and a ceramic adsorption stage 16 is mounted on the DD rotary platform 15. The X-axis linear platform 13 and the Y-axis linear platform 14 form a bidirectional walking assembly on a horizontal plane, and the DD rotary platform 15 can drive the ceramic adsorption stage 16 to rotate on the horizontal plane. A laser power meter 17 is mounted on one side of the ceramic adsorption stage 16, and the laser power meter 17 is connected to the Y-axis linear platform 14 via a bracket.

[0026] The specific processing flow of this utility model is as follows: The product to be processed (SIC) ingot is placed on the ceramic adsorption stage 16, and the (SIC) ingot is adsorbed and fixed by vacuum. The carrier assembly moves the product below the Z-axis platform 23. The height measuring instrument 24 detects the height parameter of the ingot, and the Z-axis platform 23 moves to the corresponding height. The vision locator 25 begins to locate the circumferential parameters of the product. Then, the Z-axis platform 23 drives the lifting and shaping optical path 3 to move to the processing height, while the X-axis linear platform 13 and the Y-axis linear platform 14 move the ingot to the laser processing start position.

[0027] One of the lasers 4 emits a laser beam that passes sequentially through a reflector 42, a first shaping component 41, a beam seal 44, a second shaping component 43, and a lifting shaping optical path 3, focusing the laser beam at a predetermined depth inside the ingot. The X-axis linear platform 13, the Y-axis linear platform 14, and the DD rotary platform 15 execute pre-set trajectory actions according to software, causing the laser beam to scan the entire plane of the ingot. After the other laser 4 performs the above scanning process again, the X-axis linear platform 13 and the Y-axis linear platform 14 move the product to the manual pick-and-place position to remove the cut wafer.

[0028] This invention uses laser processing to form a modified layer inside a SiC ingot, thereby peeling off wafers from the SiC ingot. It has advantages such as low material loss, high processing efficiency, and a large number of wafers produced, and the total material loss rate can be reduced to about 30%-50%.

[0029] The above description is only a preferred embodiment of the present utility model. Therefore, all equivalent changes or modifications made to the structure, features and principles described in the claims of the present utility model patent application are included in the scope of the present utility model patent application.

Claims

1. A laser dicing apparatus comprising a base (1), a carrier assembly and a laser system, the base (1) being provided with a marble column (11), the marble column (11) being provided with a marble plinth (12); characterized in that: A reference plate (2) is provided on one side of the marble base (12). A track (21) and a driver (22) are provided on the reference plate (2). A Z-axis platform (23) that can move up and down along the track (21) is provided on the track (21). The driver (22) is connected to the Z-axis platform (23). A lifting and shaping optical path (3) is provided on the Z-axis platform (23). The carrier assembly is located below the Z-axis platform (23). The laser system includes a laser (4) and an optical path module. The laser (4) is paired with the lifting and shaping optical path (3) through the optical path module.

2. The laser debond apparatus of claim 1, wherein: The optical path module includes a first shaping component (41), a reflector (42), and a second shaping component (43). The first shaping component (41) and the second shaping component (43) are disposed on the upper surface of the marble base (12), and a beam sealing element (44) is connected between the first shaping component (41) and the second shaping component (43). The laser (4) is disposed on one side of the first shaping component (41), and the laser (4) is connected to the first shaping component (41) through the reflector (42). The second shaping component (43) is paired with the lifting shaping optical path (3).

3. The laser debond apparatus of claim 2, wherein: The first shaping component (41) has lasers (4) on both sides, and the two lasers (4) are connected to the first shaping component (41) through corresponding reflectors (42).

4. The laser sheet-peeling apparatus according to claim 1, characterized by: The Z-axis platform (23) is equipped with a height measuring instrument (24).

5. The laser debond apparatus of claim 1, wherein: The Z-axis platform (23) is equipped with at least two sets of visual locators (25).

6. The laser sheet-peeling apparatus according to claim 1, characterized by: The carrier assembly includes an X-axis linear platform (13) which is fixedly connected to the base (1); the X-axis linear platform (13) is provided with a Y-axis linear platform (14), the Y-axis linear platform (14) is provided with a DD rotary platform (15), and the DD rotary platform (15) is provided with a ceramic adsorption stage (16).

7. The laser scribe apparatus of claim 6, wherein: A laser power meter (17) is provided on one side of the ceramic adsorption stage (16), and the laser power meter (17) is connected to the Y-axis linear platform (14) through a bracket.

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