Gas phase fluidic etching device

Abstract

The utility model provides a kind of gas phase jet etching device, including etching chamber, rotating platform, manipulator, jet nozzle, etching liquid evaporation tank, auxiliary atmosphere preheating tank and mixer.Rotating platform is used to fix single crystal silicon ring and drive it to rotate, jet nozzle is installed on manipulator.Etching liquid evaporation tank is used to provide etching liquid atmosphere to jet nozzle, auxiliary atmosphere preheating tank is used to provide auxiliary atmosphere to jet nozzle.Mixer is used to mix etching liquid atmosphere and auxiliary atmosphere.The gas phase jet etching device can improve the color and luster uniformity of single crystal silicon ring working surface by etching the working surface of single piece single crystal silicon ring.Meanwhile, the device only etches single piece single crystal silicon ring each time, and the effective etching component sprayed by jet nozzle can always maintain stable state, so that the etching removal amount of the device is stable, the roughness range fluctuation of single crystal silicon ring working surface is very small, and the consistency of product size can be guaranteed.

Description

Technical Field

[0001] This utility model relates to the technical field of single crystal silicon ring processing equipment, specifically to a vapor phase jet etching device. Background Technology

[0002] Capacitively Coupled Plasma (CCP) etching equipment is one of the most widely used plasma etching devices, primarily used for etching dielectric materials. A CCP etching system mainly consists of an upper electrode plate, a lower electrode plate, a gas inlet system, an electrostatic chuck, an RF feed base, a silicon outer ring, a silicon focusing ring, and an insulating ring. The silicon outer ring, silicon focusing ring, and insulating ring are typically made of monocrystalline silicon and are collectively referred to as monocrystalline silicon rings.

[0003] At present, the surface treatment of single crystal silicon rings is achieved by chemical wet etching. This surface treatment method has the following drawbacks: (1) The reaction of the single crystal silicon ring immersed in the etching solution is an exothermic reaction. The agent in the chemical tank cannot quickly exchange the heat generated by the violent reaction with the component, resulting in a temperature difference. The temperature difference causes the etching rate of the local area of ​​the single crystal silicon ring to be too fast or too slow, which ultimately leads to uneven surface color; (2) The effective components in the etching tank gradually decrease as the number of etched products increases, resulting in a large difference in etching rate and etching amount between different batches of etched products. This makes it difficult to ensure the consistency of product size. Utility Model Content

[0004] In view of the deficiencies in the prior art, the purpose of this utility model is to provide a vapor jet etching device to solve or at least alleviate one or more of the above-mentioned technical problems or other problems existing in the prior art.

[0005] To achieve the above objectives, this utility model provides a vapor phase jet etching apparatus, comprising an etching chamber; a rotating platform disposed within the etching chamber; a robotic arm disposed within the etching chamber; a jet nozzle disposed on the robotic arm; an etching liquid evaporator for providing an etching liquid atmosphere to the jet nozzle; an auxiliary atmosphere preheating tank for providing an auxiliary atmosphere to the jet nozzle; and a mixer having a first end and a second end, the first end being connected to the etching liquid evaporator and the auxiliary atmosphere preheating tank respectively, and the second end being connected to the jet nozzle, wherein the mixer is used to mix the etching liquid atmosphere and the auxiliary atmosphere.

[0006] Preferably, it further includes a pressure regulating valve, which is disposed on the robotic arm and communicates with the jet nozzle, and the pressure regulating valve is connected to the second end via a hose.

[0007] Preferably, the mixer includes a mixing tube having a first end and a second end, and a spiral mixing channel is provided inside the mixing tube, the spiral mixing channel being connected to the first end and the second end respectively.

[0008] Preferably, the mixer further includes at least one first helical blade twisted by 180° and at least one second helical blade twisted by 180°, wherein the first helical blade and the second helical blade have opposite helical directions, and the first helical blade and the second helical blade are arranged sequentially and staggered by 90°.

[0009] The spiral mixing channel includes a first channel and a second channel that are connected. Two first channels are formed between the first spiral blade and the inner wall of the mixing tube, and two second channels are formed between the second spiral blade and the inner wall of the mixing tube.

[0010] Preferably, the second end is provided with a first connecting pipe, and the end of the first connecting pipe away from the second end is provided with a first port, which is connected to the etching solution evaporation tank;

[0011] The first connecting pipe is provided with a second connecting pipe, the second connecting pipe extends into the first connecting pipe and forms an extension portion, the extension portion is provided with a second opening, the end face of the second opening is inclined and faces away from the first opening;

[0012] The axis of the first connecting pipe is perpendicular to the axis of the first connecting pipe. The plane containing the axis of the second connecting pipe and the axis of the first connecting pipe is denoted as the first plane. The plane containing the end face of the second port is denoted as the second plane. The second plane is perpendicular to the first plane.

[0013] Preferably, the system further includes a third connecting pipe and a fourth connecting pipe. The third connecting pipe is connected to the first port and the etching solution evaporator, respectively, and a first flow meter is provided on the third connecting pipe. The fourth connecting pipe is connected to the second connecting pipe and the auxiliary atmosphere preheating tank, respectively, and a second flow meter is provided on the fourth connecting pipe.

[0014] The beneficial effects of this utility model are:

[0015] This invention discloses a vapor phase jet etching apparatus that improves the color uniformity of a single-crystal silicon ring's working surface by etching it. Furthermore, because the apparatus etches only a single-crystal silicon ring at a time, the effective etching components ejected through the jet nozzle remain consistently stable, and the etching rate across the entire working surface of the single-crystal silicon ring remains uniform. Therefore, the apparatus provides stable etching removal, minimal fluctuation in the roughness range of the single-crystal silicon ring's working surface, and ensures consistent product dimensions. Attached Figure Description

[0016] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn to scale.

[0017] Figure 1 A schematic diagram of the structure of a vapor jet etching apparatus provided in an embodiment of the present invention;

[0018] Figure 2 A schematic diagram of the structure of a rotating platform, robotic arm, jet nozzle, and mixer, etc.

[0019] Figure 3 A schematic diagram showing the connection between the jet nozzle, pressure regulating valve, and mixer;

[0020] Figure 4 This is a schematic diagram of the structure in which the first and second helical blades are fitted together inside the mixing tube.

[0021] Figure 5 This is a cross-sectional schematic diagram of the mixer;

[0022] Figure 6 This is a schematic diagram of the support frame structure;

[0023] Figure label:

[0024] 10. Etching chamber; 20. Rotating platform; 21. Support frame; 22. Support arm; 221. Negative pressure hole; 23. Positioning block; 30. Robotic arm; 40. Jet nozzle; 50. Etching solution evaporator; 60. Auxiliary atmosphere preheating tank; 70. Mixer; 71. First end; 72. Second end; 73. Mixing pipe; 74. First helical blade; 75. Second helical blade; 76. First connecting pipe; 761. First port; 77. Second connecting pipe; 771. Second port; 81. Pressure regulating valve; 82. Hoses; 83. Third connecting pipe; 84. Fourth connecting pipe; 85. First flow meter; 86. Second flow meter. Detailed Implementation

[0025] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. These embodiments are merely illustrative of the present invention and should not be construed as limiting the scope of protection of the present invention.

[0026] It should be noted that, unless otherwise stated, the technical or scientific terms used in this application shall have the ordinary meaning as understood by one of ordinary skill in the art to which this utility model pertains.

[0027] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0028] Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly defined.

[0029] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0030] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0031] like Figure 1-6As shown, in one embodiment of this utility model, a vapor phase jet etching apparatus is provided, including an etching chamber 10, a rotating platform 20, a robotic arm 30, a jet nozzle 40, an etching solution evaporator 50, an auxiliary atmosphere preheating tank 60, and a mixer 70. The rotating platform 20 is mounted on a base within the etching chamber 10. The rotating platform 20 is used to fix and rotate a single-crystal silicon ring. The jet nozzle 40 is mounted on the robotic arm 30, which is mounted on the base. The robotic arm 30 is used to move the jet nozzle 40 up, down, or horizontally. The etching solution evaporator 50 provides an etching solution atmosphere to the jet nozzle 40, and the auxiliary atmosphere preheating tank 60 provides an auxiliary atmosphere to the jet nozzle 40. The auxiliary atmosphere can be one of air, argon, or nitrogen. The mixer 70 has a first end 71 and a second end 72. The first end 71 is connected to the etching solution evaporator 50 and the auxiliary atmosphere preheating tank 60, respectively, and the second end 72 is connected to the jet nozzle 40. The mixer 70 is used to mix the etching solution atmosphere and the auxiliary atmosphere.

[0032] The method for treating the surface of a single-crystal silicon ring using this vapor jet etching device mainly includes the following steps: (1) Grinding the working surface and assembly surface of the finished single-crystal silicon ring to remove the broken layer of the finished material; (2) Applying anti-corrosion shielding treatment to the assembly surface to prevent it from being corroded by the etching liquid atmosphere during the vapor jet etching process; (3) Placing the single-crystal silicon ring on the rotating platform 20 and starting the robot 30 to adjust the distance between the jet nozzle 40 and the working surface of the single-crystal silicon ring; (4) Setting the etching path of the jet nozzle 40, which adopts a circular scanning path, that is, the single-crystal silicon ring rotates around its own axis, and the jet nozzle 40 starts from the corresponding position on the inner diameter side or the corresponding position on the outer diameter side of the single-crystal silicon ring. The jet nozzle 40 is controlled by the robot 30. The single-crystal silicon ring is fed in a straight line along the radial direction. After the single-crystal silicon ring completes one rotation of etching, the jet nozzle 40 feeds radially outward or inward. The radius of each rotation gradually increases or decreases until it covers the entire working surface area of ​​the single-crystal silicon ring. (5) The vapor jet etching device is started. The rotating platform 20 drives the single-crystal silicon ring to rotate at a constant speed. The etching liquid atmosphere and the auxiliary atmosphere are mixed through the mixer 70 and then collected into the jet nozzle 40. The mixture is then sprayed onto the working surface of the single-crystal silicon ring under a certain pressure. The mixed jet atmosphere etches the working surface of the single-crystal silicon ring while removing byproducts through the gas flow rate. (6) After the jet nozzle 40 completes etching along the etching path, the shielding material is removed, the ring is rinsed with pure water, ultrasonically cleaned, and vacuum dried to complete the vapor jet etching surface treatment of the single-crystal silicon ring.

[0033] This embodiment discloses a vapor phase jet etching apparatus that improves the color uniformity of the working surface of a single-crystal silicon ring by etching the working surface of the single-crystal silicon ring. Simultaneously, because the apparatus etches only a single-crystal silicon ring at a time, the effective etching component ejected through the jet nozzle 40 remains consistently stable. When the jet nozzle 40 etches the working surface of the single-crystal silicon ring along the etching path, it ensures that the etching rate of the etched vapor phase jet ejected from the jet nozzle 40 remains consistent for each unit area of ​​the single-crystal silicon ring (i.e., the etching rate remains consistent across the entire working surface of the single-crystal silicon ring). Therefore, the etching removal amount is stable, and the roughness range of the single-crystal silicon ring working surface fluctuates very little, ensuring product dimensional consistency.

[0034] In one embodiment, the vapor jet etching apparatus further includes a pressure regulating valve 81, which is mounted on the robotic arm 30 and communicates with the jet nozzle 40. The pressure regulating valve 81 is connected to the second end 72 via a corrosion-resistant hose 82, thereby facilitating the movement of the nozzle by the robotic arm 30. The pressure regulating valve 81 can precisely regulate the pressure of the mixture of etching fluid atmosphere and auxiliary atmosphere ejected from the jet nozzle 40, thereby ensuring the stability, efficiency, and safety of the jetting process.

[0035] In one embodiment, the mixer 70 includes a mixing tube 73 having a first end 71 and a second end 72. A spiral mixing channel is provided within the mixing tube 73, communicating with both the first end 71 and the second end 72. By designing a spiral mixing channel within the mixing tube 73, the spiral mixing channel forces the etching fluid atmosphere and auxiliary atmosphere to flow along a rotational path, achieving mixing through multiple rotations. Simultaneously, the spiral mixing channel reduces flow resistance, thereby achieving efficient mixing.

[0036] In one embodiment, the mixer 70 further includes two 180° twisted first helical blades 74 and one 180° twisted second helical blade 75, the first helical blades 74 and the second helical blades 75 have opposite helical directions, and the first helical blades 74 and the second helical blades 75 are arranged sequentially and staggered by 90°.

[0037] The spiral mixing channel includes a first channel and a second channel that are connected. Two first channels are formed between the first spiral blade 74 and the inner wall of the mixing tube 73, and two second channels are formed between the second spiral blade 75 and the inner wall of the mixing tube 73.

[0038] After entering the mixing tube 73, the etching solution atmosphere and the auxiliary atmosphere will flow sequentially along the first channel, the second channel, and the first channel. Since the spiral directions of the first spiral blade 74 and the second spiral blade 75 are opposite, the etching solution atmosphere and the auxiliary atmosphere will achieve efficient mixing through multiple rotations and changes in flow direction, thereby improving the mixing effect of the etching solution atmosphere and the auxiliary atmosphere.

[0039] In one embodiment, the second end 72 is provided with a first connecting pipe 76, and the end of the first connecting pipe 76 away from the second end 72 is provided with a first port 761, which communicates with the etching solution evaporator 50. A second connecting pipe 77 is provided on the first connecting pipe 76, extending into the first connecting pipe 76 and forming an insertion portion. The insertion portion is provided with a second port 771, the end face of the second port 771 being inclined and facing away from the first port 761. The axis of the first connecting pipe 76 is perpendicular to the axis of the first connecting pipe 76. The plane containing the axis of the second connecting pipe 77 and the axis of the first connecting pipe 76 is denoted as the first plane, and the plane containing the end face of the second port 771 is denoted as the second plane, which is perpendicular to the first plane.

[0040] By designing the first connecting pipe 76 and the second connecting pipe 77, the etching solution atmosphere and the auxiliary atmosphere can be initially mixed before entering the first channel, thereby further improving the mixing effect of the mixer 70 on the etching solution atmosphere and the auxiliary atmosphere. At the same time, the axis of the first connecting pipe 76 is set perpendicular to the axis of the second connecting pipe 76, and the second plane is set perpendicular to the first plane, which can reduce the flow resistance of the etching solution atmosphere in the first connecting pipe 76.

[0041] In one embodiment, the vapor jet etching apparatus further includes a third connecting pipe 83 and a fourth connecting pipe 84. The third connecting pipe 83 is connected to the first port 761 and the etching solution evaporator 50, respectively. To facilitate accurate detection of the flow rate of the etching solution atmosphere in the third connecting pipe 83, a first flow meter 85 is provided on the third connecting pipe 83. The fourth connecting pipe 84 is connected to the second connecting pipe 77 and the auxiliary atmosphere preheating tank 60, respectively. To facilitate accurate detection of the flow rate of the auxiliary atmosphere in the third and fourth connecting pipes, a second flow meter 86 is provided on the fourth connecting pipe 84.

[0042] In one embodiment, the rotating platform 20 includes a support frame 21, a negative pressure assembly, and a rotating motor. The support frame 21 has multiple support arms 22, each with multiple negative pressure holes 221. Additionally, positioning blocks 23 are mounted on the support arms 22 for centering the monocrystalline silicon ring. The negative pressure assembly (not shown) provides negative pressure to each negative pressure hole 221, thereby ensuring the monocrystalline silicon ring fits tightly against the support arm 22. The rotating motor (not shown) is mounted within a base and drives the support frame 21 to rotate. The rotating platform 20 is prior art and will not be described further in this embodiment.

[0043] Numerous specific details are set forth in this specification. However, it will be understood that embodiments of this invention may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0044] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model, and they should all be covered within the scope of the claims and specification of this utility model.

Claims

1. A vapor phase jet etching apparatus, characterized in that, include: Etching chamber (10); A rotating platform (20) is located inside the etching chamber (10); A robotic arm (30) is installed inside the etching chamber (10); A jet nozzle (40) is provided on the robotic arm (30); An etching fluid evaporator (50) is used to supply an etching fluid atmosphere to the jet nozzle (40); An auxiliary atmosphere preheating tank (60) is used to provide an auxiliary atmosphere to the jet nozzle (40); as well as The mixer (70) has a first end (71) and a second end (72), the first end (71) being connected to the etching fluid evaporator (50) and the auxiliary atmosphere preheating tank (60) respectively, and the second end (72) being connected to the jet nozzle (40). The mixer (70) is used to mix the etching fluid atmosphere and the auxiliary atmosphere.

2. The vapor jet etching apparatus according to claim 1, characterized in that, It also includes a pressure regulating valve (81), which is located on the manipulator (30) and connected to the jet nozzle (40). The pressure regulating valve (81) is connected to the second end (72) via a hose (82).

3. The vapor jet etching apparatus according to claim 1 or 2, characterized in that, The mixer (70) includes a mixing tube (73) having a first end (71) and a second end (72). The mixing tube (73) is provided with a spiral mixing channel, which is connected to the first end (71) and the second end (72) respectively.

4. The vapor jet etching apparatus according to claim 3, characterized in that, The mixer (70) further includes at least one first helical blade (74) twisted by 180° and at least one second helical blade (75) twisted by 180°. The first helical blade (74) and the second helical blade (75) have opposite helical directions. The first helical blade (74) and the second helical blade (75) are arranged sequentially and staggered by 90°. The spiral mixing channel includes a first channel and a second channel that are connected. Two first channels are formed between the first spiral blade (74) and the inner wall of the mixing tube (73), and two second channels are formed between the second spiral blade (75) and the inner wall of the mixing tube (73).

5. The vapor jet etching apparatus according to claim 4, characterized in that, The second end (72) is provided with a first connecting pipe (76), and the end of the first connecting pipe (76) away from the second end (72) is provided with a first port (761), and the first port (761) is connected to the etching liquid evaporation tank (50); The first connecting pipe (76) is provided with a second connecting pipe (77), the second connecting pipe (77) extends into the first connecting pipe (76) and forms an extension portion, the extension portion is provided with a second opening (771), the end face of the second opening (771) is inclined and away from the first opening (761); The axis of the first connecting pipe (76) is perpendicular to the axis of the first connecting pipe (76). The plane where the axis of the second connecting pipe (77) and the axis of the first connecting pipe (76) are located is called the first plane. The plane where the end face of the second port (771) is located is called the second plane. The second plane is perpendicular to the first plane.

6. The vapor jet etching apparatus according to claim 5, characterized in that, It also includes a third connecting pipe (83) and a fourth connecting pipe (84), the third connecting pipe (83) being connected to the first port (761) and the etching liquid evaporator (50) respectively, and a first flow meter (85) being provided on the third connecting pipe (83); The fourth connecting pipe (84) is connected to the second connecting pipe (77) and the auxiliary atmosphere preheating tank (60) respectively, and a second flow meter (86) is provided on the fourth connecting pipe (84).

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