Automatic test system for nand-flash memory

Abstract

The utility model discloses an automatic test system of Nand - flash memory, including base, control unit, vibrating device and sensor module, control unit locates in the base is used to electric connection Nand - flash memory to carry out test, vibrating device connects the base is used to drive the base vibration, sensor module electric connection control unit is used to obtain the measured state information of Nand - flash memory, this application is through setting vibrating device connection and drive base vibration can simulate Nand - flash memory is in vibration environment, simultaneously, sensor module electric connection control unit, can real - time acquisition Nand - flash memory's measured state information and feedback to control unit, such as the vibration frequency of base, control unit carries out read - write erase test to Nand - flash memory, under different vibration frequency, detects whether Nand - flash memory is normal work. Effectively solved the problem of lack of the operation stability test of Nand - flash memory under the car environment in relevant technology.

Description

Technical Field

[0001] This utility model relates to the field of photographic devices, and in particular to an automatic testing system for Nand-flash memory. Background Technology

[0002] Nand-flash memory is a type of flash memory that uses a non-linear macrocell architecture, providing a cost-effective solution for realizing large-capacity solid-state memory. Nand-flash memory has advantages such as large capacity and fast rewrite speed, making it suitable for storing large amounts of data. Therefore, it has been increasingly widely used in the industry. Before being put into use, Nand-flash memory needs to be tested.

[0003] In related technologies, an automatic testing system is set up to perform read, write, and erase tests on the Nand-flash memory in order to test the operational stability of the Nand-flash memory.

[0004] The automated testing systems in the relevant technologies have the following problems: lack of testing for the operational stability of Nand-flash memory in an automotive environment. Utility Model Content

[0005] The main objective of this invention is to propose an automatic testing system for Nand-flash memory, which aims to provide an automatic testing system for Nand-flash memory in an automotive environment.

[0006] To achieve the above objectives, this utility model proposes an automatic testing system for Nand-flash memory, comprising:

[0007] Base;

[0008] A control unit, located on the base, is used to electrically connect to the Nand-flash memory for testing;

[0009] A vibration device, connected to the base, is used to drive the base to vibrate;

[0010] The sensor module is electrically connected to the control unit and is used to acquire the tested state information of the Nand-flash memory.

[0011] In some embodiments, the automated testing system further includes a temperature control device electrically connected to the control unit for changing the tested temperature of the Nand-flash memory.

[0012] In some embodiments, the temperature control device includes a cover over the base and a temperature control module disposed on the cover, the temperature control module being electrically connected to the control unit.

[0013] In some embodiments, the automatic testing system further includes an electromagnetic interference simulation module electrically connected to the control unit for performing electromagnetic testing on the Nand-flash memory.

[0014] In some embodiments, the automated testing system further includes a power simulation module electrically connected to the control unit, the power simulation module being used to supply power and to perform voltage testing on the Nand-flash memory.

[0015] In some embodiments, the automatic testing system further includes a data acquisition and processing module electrically connected to the control unit and the sensor module, the data acquisition and processing module being used to acquire and process the test status information of the Nand-flash memory obtained by the sensor module.

[0016] In some embodiments, the data acquisition and processing module includes:

[0017] The data acquisition unit is electrically connected to the sensor module and is used to acquire the tested state information of the Nand-flash memory obtained by the sensor module.

[0018] The data processing unit is electrically connected to the data acquisition unit and the control unit, and is used to process the test status information of the Nand-flash memory acquired by the data acquisition unit.

[0019] In some embodiments, the data acquisition and processing module further includes:

[0020] A storage unit, electrically connected to the data processing unit, is used to store the tested state information of the Nand-flash memory processed by the data processing unit.

[0021] In some embodiments, the automatic testing system further includes a data analysis and processing module electrically connected to the data processing unit, for analyzing and processing the test status information of the Nand-flash memory transmitted by the data processing unit.

[0022] In some embodiments, the automatic testing system further includes a feedback module electrically connected to the control unit and the data processing unit, used to monitor the tested state information of the Nand-flash memory for state feedback.

[0023] This application utilizes a control unit mounted on a base, electrically connected to a Nand-flash memory for testing. A vibration device connected to the base simulates the vibration environment the Nand-flash memory might encounter in real-world applications. Furthermore, a sensor module electrically connected to the control unit acquires real-time test status information of the Nand-flash memory, such as the vibration frequency of the base, and feeds this information back to the control unit. The control unit then performs read, write, and erase tests on the Nand-flash memory, detecting its normal operation at different vibration frequencies. This effectively solves the problem in related technologies of lacking testing for the operational stability of Nand-flash memory in automotive environments. Attached Figure Description

[0024] Figure 1 This is a partial structural schematic diagram of an embodiment of the automatic testing system for Nand-flash memory of this utility model;

[0025] Figure 2 This is a structural block diagram of an embodiment of the automatic testing system for Nand-flash memory of this utility model;

[0026] Figure 3 This is a structural block diagram of another embodiment of the automatic testing system for Nand-flash memory of this utility model;

[0027] Figure 4 This is a structural block diagram of another embodiment of the automatic testing system for Nand-flash memory of this utility model.

[0028] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0029] The solutions in the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of this utility model.

[0030] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in this utility model embodiment are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0031] It should also be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on the other component or there may be an intervening component present. When a component is referred to as being "connected to" another component, it can be directly connected to the other component or there may be an intervening component present.

[0032] Furthermore, the use of terms such as "first" and "second" in this utility model is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. If the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this utility model.

[0033] Reference Figure 1 and Figure 2 An automated testing system for Nand-flash memory includes:

[0034] Base 1;

[0035] Control unit 2, located on the base 1, is used to electrically connect to the Nand-flash memory for testing;

[0036] Vibration device 3, connected to the base 1, is used to drive the base 1 to vibrate;

[0037] Sensor module 4 is electrically connected to control unit 2 and is used to acquire the tested state information of the Nand-flash memory.

[0038] In this embodiment, the core principle of the automatic testing system for Nand-flash memory is to simulate the vibration environment that Nand-flash memory may encounter in actual automotive use. At the same time, the sensor module 4 monitors its test status information in real time. Under the influence of vibration, the test status information can display the vibration frequency of the Nand-flash memory. The control unit 2 performs read, write, and erase tests on the Nand-flash memory and detects whether the Nand-flash memory is working properly under different vibration frequencies.

[0039] Specifically, the vibration device 3 drives the base 1 to vibrate, causing the Nand-flash memory mounted on the base 1 and electrically connected to the control unit 2 to be in a vibrating state, simulating vibration scenarios that may be encountered in actual applications. The sensor module 4 senses various status parameters of the Nand-flash memory in real time, such as read / write / erase error rate and data transmission stability, and converts this status information into electrical signals that are transmitted to the control unit 2.

[0040] In this embodiment, the sensor module 4 can be a vibration sensor, which can acquire the current vibration frequency of the Nand-flash memory under vibration test environment and feed it back to the control unit 2. The control unit 2 performs read, write and erase tests on the Nand-flash memory, and determines whether the current vibration frequency has any impact on the read, write and erase of the Nand-flash memory by whether the read, write and erase test is stable.

[0041] The vibration device 3 drives the base 1 to vibrate according to preset parameters such as vibration frequency, amplitude, and duration. Since the Nand-flash memory is connected to the control unit 2 located on the base 1, it vibrates along with the base 1, simulating the vibration effects caused by different road conditions and transportation processes. Specifically, it can simulate vibrations in the frequency range of 5-200Hz to simulate different road conditions encountered by a car during driving, for example:

[0042] When simulating 5Hz, it generally corresponds to a car driving on a bumpy rural dirt road or a damaged highway with many potholes. The frequency is low, the vibration period is long, and the amplitude is relatively large. People inside the car can clearly feel the up-and-down shaking, similar to the feeling of slowly climbing and going downhill when riding a roller coaster. Objects inside the car may shake noticeably or even shift.

[0043] Simulating 100Hz might simulate the effects of a car driving on a highway, such as road seams, uneven patches, or speed bumps. The frequency is moderate, the vibration is relatively fast and rhythmic. Passengers inside the car will feel frequent, slight bumps, similar to quickly passing over a series of small bumps, and objects inside the car will experience slight, high-frequency vibrations.

[0044] Simulating 200Hz typically refers to the high-frequency vibrations generated by car tires rotating at high speeds due to the unevenness of the tires themselves, minor road imperfections, or encountering obstacles such as small stones. The frequency is high, and the vibrations are very rapid and subtle. Inside the car, a person might only feel a slight high-frequency buzzing sound or a tingling sensation, generally without any noticeable shaking. However, prolonged exposure to this vibration environment may cause fatigue wear on some components inside the car.

[0045] In some embodiments, the vibration device 3 is preferably an electric vibration table, which operates based on the principle of electromagnetic induction and can drive the base 1 to vibrate through the electromagnetic force generated by alternating current in a magnetic field. When the frequency range to be tested does not need to be too high, a hydraulic vibration table, a pneumatic vibration table, or the like can also be used as the vibration device 3.

[0046] In some embodiments, the vibration device 3 and the base 1 are detachably connected. The base 1 and the control unit 2 can also be collectively referred to as a test socket in the testing field. When it is necessary to test other types of memory besides Nand-flash memory, such as SPI-NAND memory, eMMC memory, and UFS memory, this application can test different memories by replacing the corresponding test socket, and is not limited to Nand-flash memory; this is only an illustrative example. In special cases, the control unit 2 can also be placed directly on the vibration device 3 for vibration testing, instead of the control unit 2 being connected to the vibration device 3 via the base 1.

[0047] This application addresses the problem of lacking testing capabilities for the operational stability of Nand-flash memory in automotive environments by installing a control unit 2 on a base 1, electrically connected to the control unit 2. A vibration device 3 is connected to the base 1, simulating the vibration environment the Nand-flash memory might encounter in practical applications by driving the base 1 to vibrate. Furthermore, a sensor module 4 is electrically connected to the control unit 2, enabling real-time acquisition of the Nand-flash memory's test status information, such as the vibration frequency of the base 1, and feeding this information back to the control unit 2. The control unit 2 then performs read, write, and erase tests on the Nand-flash memory, detecting its normal operation at different vibration frequencies. This effectively solves the problem in related technologies of lacking testing for the operational stability of Nand-flash memory in automotive environments.

[0048] Reference Figure 2 In some embodiments, the automatic testing system proposed in this application further includes a temperature control device 5 electrically connected to the control unit 2, for changing the tested temperature of the Nand-flash memory.

[0049] Preferably, in some embodiments, the temperature control device 5 includes a cover 51 covering the base 1 and a temperature control module 52 disposed on the cover 51, the temperature control module 52 being electrically connected to the control unit 2.

[0050] In this embodiment, the main purpose of the temperature control device 5 is to simulate different temperature environments to test whether the Nand-flash memory can perform read and erase operations normally under various temperature conditions. It consists of a cover 51 enclosing the base 1 and a temperature control module 52 disposed on the cover 51. The cover 51 forms a relatively enclosed space, partially enclosing the Nand-flash memory and the base 1, reducing interference from external ambient temperature, and enabling the temperature control module 52 to more accurately control the internal temperature.

[0051] The temperature control module 52 is electrically connected to the control unit 2, which sets the target temperature according to the test requirements. Upon receiving the command from the control unit 2, the temperature control module 52 begins operation. If a temperature increase is required, the temperature control module 52 may generate heat through a heating element (such as a resistance wire) to raise the temperature inside the enclosure 51; if a temperature decrease is required, a cooling element (such as a thermoelectric cooler) may be used. Understandably, the sensor module 4 may also include a temperature sensor to monitor the actual temperature inside the enclosure 51 in real time and feed the temperature information back to the control unit 2. The control unit 2 can compare the difference between the actual temperature and the target temperature, and further adjust the control commands to the temperature control module 52 based on the deviation, forming a closed-loop temperature control system to ensure that the Nand-flash memory is within the set test temperature environment.

[0052] Reference Figure 2 In some embodiments, the automatic testing system proposed in this application further includes an electromagnetic interference simulation module 6 electrically connected to the control unit 2 for performing electromagnetic testing on the Nand-flash memory.

[0053] In this embodiment, the system connection and control are as follows: the electromagnetic interference simulation module 6 is electrically connected to the control unit 2. The control unit 2 can send instructions to the electromagnetic interference simulation module 6 according to test requirements to control it to generate electromagnetic interference signals of specific types and intensities. The electromagnetic interference simulation module 6 typically contains components such as a signal generator and a power amplifier. The signal generator can generate electromagnetic signals of various frequencies and waveforms, such as sine waves, square waves, and pulse waves. These signals are amplified to the required intensity by the power amplifier, thereby forming a specific electromagnetic interference field around the Nand-flash memory. The generated electromagnetic interference field will act on the Nand-flash memory and affect its operating state. Understandably, the sensor module 4 may also be equipped with an electromagnetic interference sensor to monitor the actual intensity and characteristics of the electromagnetic interference and feed this information back to the control unit 2.

[0054] Reference Figure 2In some embodiments, the automatic testing system proposed in this application further includes a power simulation module 7 electrically connected to the control unit 2, the power simulation module 7 being used to supply power and to perform voltage testing on the Nand-flash memory.

[0055] In this embodiment, the power simulation module 7 is electrically connected to the control unit 2 and also connected to the power supply interface of the Nand-flash memory. It can convert and regulate externally input power (such as DC power converted from AC mains power by a power adapter) to provide a stable operating voltage for the Nand-flash memory. The power simulation module 7 typically includes a power conversion circuit, such as a DC-DC converter, which converts the input voltage to the specific voltage value required by the Nand-flash memory, such as 3.3V or 1.8V. In addition, a voltage regulator circuit is included to ensure the stability of the output voltage to meet the power quality requirements of the Nand-flash memory.

[0056] When performing voltage testing on a Nand-flash memory, the power supply simulation module 7, under the command of the control unit 2, can change the magnitude and waveform of the output voltage according to a preset test scheme. For example, it can simulate power supply voltage fluctuations and transient changes, precisely controlling the rise and fall times of the output voltage and switching between different voltage values ​​through the control unit 2 to test the read / write performance, stability, and reliability of the Nand-flash memory under various voltage conditions. Simultaneously, the power supply simulation module 7 monitors the actual values ​​of the output voltage and current in real time and feeds this information back to the control unit 2, allowing the control unit 2 to adjust test parameters or determine whether the test results meet expectations based on the feedback data. Understandably, the sensor module 4 can be equipped with a voltage sensor to monitor voltage changes.

[0057] Reference Figure 3 In some embodiments, the automatic testing system proposed in this application further includes a data acquisition and processing module 8 electrically connected to the control unit 2 and the sensor module 4. The data acquisition and processing module 8 is used to acquire and process the test status information of the Nand-flash memory obtained by the sensor module 4.

[0058] Preferably, in some embodiments, the aforementioned data acquisition and processing module 8 includes:

[0059] The data acquisition unit 81 is electrically connected to the sensor module 4 and is used to acquire the test status information of the Nand-flash memory obtained by the sensor module 4.

[0060] The data processing unit 82 is electrically connected to the data acquisition unit 81 and the control unit 2, and is used to process the test status information of the Nand-flash memory acquired by the data acquisition unit 81.

[0061] In this embodiment, the data acquisition unit 81 is electrically connected to the sensor module 4. The sensor module 4 monitors the measured state information of the Nand-flash memory in real time, such as the vibration frequency and temperature of the base 1, as well as other related physical quantities. The data acquisition unit 81 samples these analog signals at a certain sampling frequency and converts them into digital signals for subsequent processing and transmission. For example, for the vibration frequency signal, the data acquisition unit 81 measures the voltage value output by the sensor at each sampling moment and converts it into the corresponding digital frequency value.

[0062] The data processing unit 82 is electrically connected to the data acquisition unit 81. After receiving the acquired digital signals, it processes the data according to preset algorithms and models. This processing may include data filtering to remove noise and interference signals to improve data quality; data calibration to calibrate the acquired data and ensure its accuracy; and data analysis to extract valuable information through various statistical methods and signal processing techniques, such as calculating the average, maximum, and minimum values ​​of vibration frequencies and analyzing temperature change trends. Furthermore, the data processing unit 82 may also encode and compress the processed data for storage and transmission.

[0063] Reference Figure 3 In some embodiments, the data acquisition and processing module 8 proposed in this application further includes:

[0064] Storage unit 83 is electrically connected to the data processing unit 82, and the storage unit 83 is used to store the test status information of the Nand-flash memory processed by the data processing unit 82.

[0065] In this embodiment, the storage unit 83 is electrically connected to the data processing unit 82. After the data processing unit 82 completes the data processing of the test status information of the Nand-flash memory, it writes the processed data into the storage unit 83 according to a certain format and rules. The storage unit 83 typically uses a high-capacity storage medium, such as a hard disk or flash memory, to ensure that it can store a large amount of test data. The data storage method in the storage unit 83 may employ a database management system or a specific file system to facilitate data organization, retrieval, and management. For example, the test status information under different test conditions can be stored in different database tables, or the data can be stored in a specific file in chronological order, and corresponding identifiers and metadata can be added to each data record to facilitate subsequent retrieval and analysis.

[0066] Reference Figure 3 In some embodiments, the automatic testing system proposed in this application further includes a data analysis and processing module 9 electrically connected to the data processing unit 82, for analyzing and processing the test status information of the Nand-flash memory transmitted by the data processing unit 82.

[0067] In this embodiment, the received data may contain noise, missing values, or inconsistent formats, thus requiring preprocessing. This may include data cleaning to remove outliers and erroneous data; data normalization to convert data of different ranges and scales to a unified standard for subsequent analysis; and data imputation to reasonably estimate and supplement missing data.

[0068] Various data analysis methods and techniques can be used to conduct in-depth analysis of the preprocessed data. For example:

[0069] Statistical analysis: Calculate statistics such as mean, variance, and standard deviation of the data to understand the central tendency and dispersion of the data, and to evaluate the performance stability of Nand-flash memory under different conditions.

[0070] Correlation analysis: Determine the correlation between different tested state information, such as whether there is a correlation between vibration frequency and read / write error rate, thereby identifying key factors that may affect the performance of Nand-flash memory.

[0071] Trend analysis: Observe the trend of data changes over time or other variables to determine whether the performance of Nand-flash memory changes with the change of test conditions, and predict its possible performance in the future.

[0072] Based on the analysis results, corresponding data models may be established, such as regression models and classification models. These models can be used to predict the performance of Nand-flash memory under different conditions, such as predicting its read / write error rate based on temperature and vibration frequency, or determining whether it will fail.

[0073] Finally, the results of the analysis and processing are output in an intuitive way, such as generating reports and charts (line charts, bar charts, scatter plots, etc.), so that testers and relevant decision-makers can quickly understand and use this information.

[0074] By automating the analysis and processing of large amounts of tested status information, the workload and errors of manual analysis are reduced, enabling faster and more accurate evaluation of Nand-flash memory performance. For example, it can promptly detect anomalies and potential problems in the data, improving the reliability of the test.

[0075] The analysis results can provide valuable references for the design and optimization of Nand-flash memory. For example, if it is found that the read / write error rate increases significantly when the vibration frequency is high, corresponding vibration reduction measures can be taken in the product design; or the heat dissipation design can be optimized based on the relationship between temperature and performance, thereby improving the overall performance and reliability of the product.

[0076] In-depth analysis of large amounts of data can reveal potential problems and patterns that may be difficult to detect during routine testing. For example, certain combinations of environmental factors can cause performance degradation or failure in Nand-flash memory. Timely detection of these problems helps to take preventative measures and avoid serious issues in real-world applications.

[0077] Reference Figure 4 In some embodiments, the automatic testing system proposed in this application further includes a feedback module 10, which is electrically connected to the control unit 2 and the data processing unit 82, for monitoring the tested state information of the Nand-flash memory to provide state feedback.

[0078] In this embodiment, the feedback module 10 is electrically connected to the data processing unit 82. The data processing unit 82 transmits the tested status information of the Nand-flash memory to the feedback module 10. This information includes, but is not limited to, various data reflecting the working status of the Nand-flash memory, such as voltage, current, temperature, read / write speed, and error rate. The feedback module 10 is electrically connected to the control unit 2. Once it detects an abnormality in the status of the Nand-flash memory or that adjustment is needed, it immediately sends a feedback signal to the control unit 2. This feedback signal can be a simple digital signal indicating the type or severity of the problem, or it can be a data frame containing detailed status information so that the control unit 2 can accurately understand the status of the Nand-flash memory. After receiving the feedback signal, the control unit 2 will take corresponding measures according to a preset strategy, such as adjusting test parameters, pausing the test, or issuing an alarm, to ensure the safety and effectiveness of the test process. It can also promptly address problems with the Nand-flash memory to prevent further damage or errors. It is understood that an external alarm can also be used to alert the tester to stop the test.

[0079] The above description is only a part or preferred embodiment of this utility model. Neither the text nor the drawings should limit the scope of protection of this utility model. All equivalent structural transformations made using the content of this utility model specification and drawings under the overall concept of this utility model, or direct / indirect applications in other related technical fields, are included within the scope of protection of this utility model.

Claims

1. An automatic testing system for Nand-flash memory, characterized in that, include; Base; A control unit, located on the base, is used to electrically connect to the Nand-flash memory for testing; A vibration device, connected to the base, is used to drive the base to vibrate; The sensor module is electrically connected to the control unit and is used to acquire the tested state information of the Nand-flash memory.

2. The automatic testing system according to claim 1, characterized in that, The automatic testing system also includes a temperature control device electrically connected to the control unit, used to change the tested temperature of the Nand-flash memory.

3. The automatic testing system according to claim 2, characterized in that, The temperature control device includes a cover over the base and a temperature control module disposed on the cover, the temperature control module being electrically connected to the control unit.

4. The automatic testing system according to claim 1, characterized in that, The automatic testing system also includes an electromagnetic interference simulation module electrically connected to the control unit for performing electromagnetic testing on the Nand-flash memory.

5. The automatic testing system according to claim 1, characterized in that, The automatic testing system also includes a power simulation module electrically connected to the control unit, the power simulation module being used to supply power and to perform voltage testing on the Nand-flash memory.

6. The automatic testing system according to claim 1, characterized in that, The automatic testing system also includes a data acquisition and processing module electrically connected to the control unit and the sensor module. The data acquisition and processing module is used to acquire and process the test status information of the Nand-flash memory obtained by the sensor module.

7. The automatic testing system according to claim 6, characterized in that, The data acquisition and processing module includes: The data acquisition unit is electrically connected to the sensor module and is used to acquire the tested state information of the Nand-flash memory obtained by the sensor module. The data processing unit is electrically connected to the data acquisition unit and the control unit, and is used to process the test status information of the Nand-flash memory acquired by the data acquisition unit.

8. The automatic testing system according to claim 7, characterized in that, The data acquisition and processing module also includes: A storage unit, electrically connected to the data processing unit, is used to store the tested state information of the Nand-flash memory processed by the data processing unit.

9. The automatic testing system according to claim 8, characterized in that, The automatic testing system also includes a data analysis and processing module electrically connected to the data processing unit, used to analyze and process the test status information of the Nand-flash memory transmitted by the data processing unit.

10. The automatic testing system according to claim 8, characterized in that, The automatic testing system also includes a feedback module, which is electrically connected to the control unit and the data processing unit, for monitoring the tested state information of the Nand-flash memory to provide state feedback.

Images