Wafer cleaning rack

Abstract

This utility model discloses a wafer cleaning rack, including an anode plate, a cathode plate, a support plate, a positive electrode, and a negative electrode. The cathode plate and anode plate are parallel and horizontally arranged, with a space between them for placing the workpiece to be cleaned. Perforations are evenly distributed on both the cathode plate and anode plate. Two support plates are located on opposite sides of the cathode plate and anode plate, respectively, and both sides of the cathode plate and anode plate are connected to the same support plate. The positive and negative electrodes are arranged along the height direction and electrically connected to the cathode plate and anode plate, respectively. Compared to a vertical anode plate design, this design is simpler, lighter, and more operable. The anode and cathode plates can be installed by sliding inwards and disassembled by sliding outwards. The number of anode and cathode plates can be increased or decreased according to different customer needs, and the spacing between each anode and cathode plate can be adjusted according to cleaning requirements.

Description

Technical Field

[0001] This utility model belongs to the technical field of semiconductor device cleaning equipment, specifically relating to a wafer cleaning rack. Background Technology

[0002] Plasma cleaning is a technology that uses high-energy particles and active free radicals in plasma for surface treatment. A plasma cleaning machine is a device that uses plasma to effectively remove organic contaminants from the surface of materials, thereby achieving cleaning, coating, and other purposes. As a brand-new cleaning technology, plasma cleaning can achieve results that conventional cleaning solutions cannot.

[0003] Plasma cleaners generally include microwave plasma cleaners and radio frequency plasma cleaners. Microwave plasma cleaners typically operate at a frequency of 2.45 GHz, where the electron energy in the plasma is relatively concentrated, usually exhibiting a high energy density. This makes microwave plasma perform well in applications requiring high-energy reactions. Radio frequency plasma cleaners typically operate at a frequency of 13.56 MHz, where the electron energy distribution in the plasma is relatively wider. This means that during the cleaning or surface treatment process, both high-energy electrons physically bombard the material surface to remove contaminants and oxide layers, and slightly lower-energy electrons participate in chemical reactions, generating active groups and chemically modifying the material surface.

[0004] The feed rack in an RF plasma cleaner is a crucial component for placing samples or materials to be processed. Its design and function directly impact the cleaning effect and equipment operating efficiency. The main function of the feed rack is to support and secure the workpiece to be cleaned, ensuring its stability during the plasma cleaning process and uniform exposure to the plasma.

[0005] This invention provides a novel wafer cleaning rack to meet the current production needs of the industry. Utility Model Content

[0006] To address the aforementioned problems in existing technologies, this utility model provides a wafer cleaning rack, comprising an anode plate, a cathode plate, a support plate, a positive electrode, and a negative electrode. A space for placing the workpiece to be cleaned is provided between the cathode plate and the anode plate. Compared to a vertical anode plate design, this rack is simpler in structure, lighter in weight, and more operable. The anode and cathode plates can be installed by sliding inwards and disassembled by sliding outwards, thus easily facilitating their assembly and disassembly. The number of anode and cathode plates can be increased or decreased according to different customer needs, and the spacing between each anode and cathode plate can be adjusted quickly and easily according to cleaning requirements.

[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0008] A wafer cleaning rack includes an anode plate, a cathode plate, a support plate, a positive electrode, and a negative electrode. The cathode plate and the anode plate are parallel to each other and horizontally arranged, with a space between them for placing the workpiece to be cleaned. Perforations are evenly distributed on the cathode plate and the anode plate. There are two support plates, located on both sides of the cathode plate and the anode plate, respectively. Both sides of the cathode plate and the anode plate are connected to the same support plate. The positive electrode and the negative electrode are arranged along the height direction and electrically connected to the cathode plate and the anode plate, respectively.

[0009] Furthermore, a connecting groove is fixed on both sides of the cathode plate and the anode plate. The connecting groove is horizontally arranged. The support plate is evenly provided with a plurality of connecting holes along the height direction. The support plate is fixed with a support strip through the connecting holes. The support strip and the connecting groove are slidably engaged.

[0010] Furthermore, the end of the support bar is chamfered.

[0011] Furthermore, both the positive and negative electrodes include an insulating side plate, an electrode strip, a cover plate, and an electrode clamping assembly. At least two electrode clamping assemblies are installed along the length of one side of the electrode strip. The electrode clamping assemblies are electrically connected to the electrode strip and are used to electrically connect to the cathode plate or anode plate. The cover plate is provided on the side of the electrode strip away from the electrode clamping assembly. The cover plates are distributed along the length of the electrode strip. The insulating side plate is fixedly installed on both sides of the electrode strip and surrounds the electrode clamping assembly.

[0012] Furthermore, the cover plate is made of Teflon material.

[0013] Furthermore, the electrode clamping assembly includes an electrode pressing block and an electrode pressing plate, both of which are made of conductive material. Both the electrode pressing block and the electrode pressing plate are fixed to the electrode strip. The electrode pressing plate has an elastic arched structure. The electrode pressing plate and the electrode pressing block are staggered, and the two ends of the electrode pressing plate abut against the two sides of the electrode pressing block, respectively.

[0014] Furthermore, it also includes a cleaning base for placing the workpiece to be cleaned, the cleaning base being detachably fixed to the cathode plate or the anode plate, and a number of insulating pads being provided between the cleaning base and the cathode plate or the anode plate.

[0015] Furthermore, the insulating pad is a ceramic pad.

[0016] Compared with existing technologies, the beneficial effects of this solution are:

[0017] This invention provides a wafer cleaning rack for placing workpieces to be cleaned. The rack features a horizontal design for the anode and cathode plates, which, compared to a vertical anode plate design, offers a simpler structure, lighter weight, and greater operability. The anode and cathode plates can be installed by sliding inwards and disassembled by sliding outwards, allowing for easy assembly and disassembly. The rack design can accommodate up to ten layers (five anode plates and five cathode plates), and the number of anode and cathode plates can be increased or decreased according to different customer needs. Furthermore, the spacing between each anode and cathode plate can be adjusted quickly and easily according to cleaning requirements. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of the semiconductor device cleaning equipment;

[0019] Figure 2 This is a schematic diagram of a vacuum cavity structure;

[0020] Figure 3 This is a front view of the vacuum cavity;

[0021] Figure 4 Side view of the vacuum chamber;

[0022] Figure 5 This is a schematic diagram of the material rack structure;

[0023] Figure 6 This is a schematic diagram of another structure of the material rack;

[0024] Figure 7 This is the main view of the material rack;

[0025] Figure 8 This is a schematic diagram of the anode plate structure;

[0026] Figure 9 This is a schematic diagram of the negative electrode structure;

[0027] Figure 10 This is a schematic diagram of another structure for the negative electrode.

[0028] Figure 11 This is a schematic diagram of the negative electrode structure (with the insulating side plate removed).

[0029] The reference numerals in the attached figures are as follows:

[0030] Frame 1, Chamber door 11, Industrial computer 12, Vacuum chamber 2, RF matching unit 21, RF power supply 22, Baffle valve 23, Vacuum gauge 24, Material rack 3, Anode plate 31, Connecting groove 311, Electrode connector 312, Cathode plate 32, Support plate 33, Support bar 331, Positive electrode 34, Negative electrode 35, Insulating side plate 351, Electrode bar 352, Cover plate 353, Electrode clamping assembly 36, Electrode pressure block 361, Electrode pressure plate 362, Grounding post 363, Cleaning base 37, Insulating pad 371. Detailed Implementation

[0031] The present invention will now be described in further detail with reference to the accompanying drawings.

[0032] A semiconductor device cleaning device, such as Figures 1-4 As shown, including

[0033] A frame 1, in which a vacuum chamber 2 is installed, and a chamber door 11 is installed on one side of the frame 1, the chamber door 11 being able to cover the open side of the vacuum chamber 2;

[0034] An RF matching unit 21 is installed on the upper part of the vacuum chamber 2. The RF matching unit 21 is electrically connected to the RF power supply 22 in the rack 1. The RF matching unit 21 is used to excite plasma into the vacuum chamber 2. A material rack 3 is installed in the vacuum chamber 2. The material rack 3 is used to place the workpiece to be cleaned. The material rack 3 has at least one layer of space for placing the workpiece to be cleaned.

[0035] According to a specific embodiment of this utility model, in this embodiment, an industrial control computer 12 is installed on the side of the frame 1 where the cavity door 11 is installed. The vacuum chamber 2 installed inside the frame 1 is sealed to the cavity door 11. A sealing strip is provided on the edge of the cavity door 11 or the vacuum chamber 2 that contacts the cavity door 11. One side of the cavity door 11 is hinged to the vacuum chamber 2 or the frame 1. A baffle valve 23 and a vacuum gauge 24 are installed on the back of the vacuum chamber 2. The baffle valve 23 is a valve used to control fluid flow, usually used in pipeline systems. It regulates or cuts off the flow of fluid by raising or lowering or rotating the baffle. The baffle valve 23 has the characteristics of simple structure and good sealing performance. The vacuum gauge 24 is an instrument used to measure the gas pressure in a vacuum system. Its principle is to measure the pressure by utilizing the displacement or deformation of mechanical parts. In this embodiment, the radio frequency power supply 22 is installed in the lower part of the frame 1, and the vacuum pump is located outside the frame 1 and connected to the outside of the vacuum chamber 2. The inner wall of the vacuum chamber 2 is equipped with a chamber partition. The partition has two layers: one made of Teflon material and the other of aluminum alloy material. The Teflon partition is in direct contact with the vacuum chamber 2 to achieve insulation. Installing the chamber partition can reduce the dispersion of plasma reaction and allow the plasma to be concentrated in the cleaning area of ​​the workpiece to be cleaned, ensuring good uniformity of cleaning.

[0036] This utility model relates to a semiconductor device cleaning process that uses radio frequency plasma to clean the surface of workpieces, removing contaminants such as particles, oxides, and organic matter. This improves the reliability of workpiece welding and reduces the occurrence of detachment. Compared with microwave plasma cleaning technology, the radio frequency plasma cleaner has a relatively simple equipment structure, and the cost of key components such as the radio frequency power supply 22 and the matching unit is lower. In some application scenarios where the cleaning precision requirements are not extremely high, it can meet basic cleaning needs at a lower cost, offering high cost-effectiveness. The process parameters of the radio frequency plasma cleaner have a wide adjustment range, allowing for flexible adjustment of parameters such as radio frequency power, gas flow rate, and cleaning time according to different cleaning materials and requirements to achieve the best cleaning effect.

[0037] Furthermore, such as Figures 5-7 As shown, the material rack 3 includes an anode plate 31, a cathode plate 32, a support plate 33, a positive electrode 34, and a negative electrode 35. The cathode plate 32 and the anode plate 31 are parallel to each other and horizontally arranged. A space is left between the cathode plate 32 and the anode plate 31 for placing the workpiece to be cleaned. Perforations are evenly distributed on the cathode plate 32 and the anode plate 31. There are two support plates 33, which are located on both sides of the cathode plate 32 and the anode plate 31, respectively. Both sides of the cathode plate 32 and the anode plate 31 are connected to the same support plate 33. The positive electrode 34 and the negative electrode 35 are installed on the inner wall of the vacuum chamber 2. The positive electrode 34 and the negative electrode 35 are arranged along the height direction and are electrically connected to the cathode plate 32 and the anode plate 31, respectively.

[0038] According to a specific embodiment of this utility model, the material rack 3 in the radio frequency plasma cleaner is an important component for placing the sample or material to be processed. Its design and function directly affect the cleaning effect and equipment operating efficiency. The main function of the material rack 3 is to support and fix the sample or material to be processed, ensuring its stability during the plasma cleaning process and uniform exposure to the plasma. Figure 8 As shown, the anode plate 31 and cathode plate 32 have the same structure. In this embodiment, a rectangular plate structure is adopted. When the anode plate 31 and cathode plate 32 are multi-layered, they are arranged in parallel and staggered positions, horizontally placed between the support plates 33. In this embodiment, the positive electrode 34 and the negative electrode 35 are parallel to each other and have the same structure. The positive electrode 34 and the negative electrode 35 are vertically arranged, with their height matching the height of the vacuum chamber 2. The positive electrode 34 and the negative electrode 35 are located on the back side of the cathode plate 32 and the anode plate 31. Perforations are evenly distributed on the cathode plate 32 and the anode plate 31, which can achieve uniform gas distribution, increase plasma density, control plasma distribution, prevent arc discharge, enhance heat dissipation, and optimize gas flow, thereby improving the performance and cleaning effect of the radio frequency plasma cleaner.

[0039] Furthermore, a connecting groove 311 is fixed on both sides of the cathode plate 32 and the anode plate 31. The connecting groove 311 is horizontally arranged. The support plate 33 is evenly provided with a plurality of connecting holes along the height direction. The support plate 33 is fixed with a support strip 331 through the connecting holes. The support strip 331 and the connecting groove 311 are slidably engaged.

[0040] According to a specific embodiment of this utility model, in actual production, due to the different thicknesses of different workpieces (wafers) to be cleaned, the cathode plate 32 and anode plate 31 are detachably installed on the side of the support plate 33 via the connecting groove 311 and the support strip 331. In use, the cathode plate 32 or anode plate 31 is inserted into the support strip 331 through the connecting groove 311, thereby allowing the position of the cathode plate 32 and anode plate 31 to be changed according to the different thicknesses of the workpieces to be cleaned. Furthermore, the end of the support strip 331 is chamfered, which facilitates the insertion of the connecting groove 311 into the support strip 331 during installation.

[0041] Furthermore, such as Figures 9-11 As shown, the negative electrode 35 is electrically connected to the vacuum chamber 2. Both the positive electrode 34 and the negative electrode 35 include an insulating side plate 351, an electrode strip 352, a cover plate 353, and an electrode clamping assembly 36. At least two electrode clamping assemblies 36 are installed along the length of one side of the electrode strip 352. The electrode clamping assembly 36 is electrically connected to the electrode strip 352. The electrode clamping assembly 36 is used to electrically connect the cathode plate 32 or the anode plate 31. The cover plate 353 is provided on the side of the electrode strip 352 away from the electrode clamping assembly 36. The cover plate 353 is distributed along the length of the electrode strip 352. The insulating side plate 351 is fixedly installed on both sides of the electrode strip 352 and surrounds the electrode clamping assembly 36.

[0042] According to a specific embodiment of this utility model, in order to design a simple structure for the positive electrode 34 and the negative electrode 35, in this embodiment, the positive electrode 34 and the negative electrode 35 have most of the same structure. The difference is that the upper and lower ends of the electrode strip 352 of the negative electrode 35 are electrically connected to the vacuum cavity 2 through two metal grounding posts 363 (which are conductive); the upper end of the electrode strip 352 of the positive electrode 34 is connected to the vacuum electrode, and the lower end is insulated from the inner wall of the vacuum cavity 2 through a ceramic post and a Teflon gasket; both the electrode clamping assembly 36 and the electrode strip 352 are conductive structures. The electrode clamping assembly 36 is electrically connected to the electrode strip 352. The electrode clamping assembly 36 is evenly distributed on the electrode strip 352. A cover plate 353 is provided on the side of the electrode strip 352 away from the electrode clamping assembly 36. The cover plate 353 is made of Teflon material. Teflon is the trademark name for polytetrafluoroethylene (PTFE). Its main characteristics include: almost no reaction with any chemicals, stable operation in a temperature range of -200°C to +260°C, and excellent electrical insulation properties. A cover plate 353 is distributed along the length of the electrode strip 352. The cover plate 353 is located on the side where the positive electrode 34 and negative electrode 35 contact the cathode plate 32 or anode plate 31, thus achieving insulation. The insulating side plate 351 has a U-shaped cross-section, and its two ends are connected to the cover plate 353, thereby enclosing the electrode strip 352 and the electrode clamping assembly 36 internally.

[0043] The electrode strip 352 is made of copper, which has excellent conductivity, second only to silver, and can make the current of each electrode plate connected to the electrode strip 352 uniform and consistent. The electrode clamping block 361 and the electrode clamping plate 362 are made of brass, which has high strength and hardness, and can reduce the wear of the electrode connector 312 during the installation and removal of the electrode plates. The electrode clamping plate 362 cooperates with the electrode clamping block 361 to make the anode plate 31 and the cathode plate 32 securely fixed and easy to install and remove.

[0044] Furthermore, such as Figure 11 As shown, the electrode clamping assembly 36 includes an electrode pressing block 361 and an electrode pressing plate 362. Both the electrode pressing block 361 and the electrode pressing plate 362 are made of conductive material. Both the electrode pressing block 361 and the electrode pressing plate 362 are fixed on the electrode strip 352. The electrode pressing plate 362 has an elastic arched structure. The electrode pressing plate 362 and the electrode pressing block 361 are staggered, and the two ends of the electrode pressing plate 362 abut against the two sides of the electrode pressing block 361 respectively.

[0045] According to a specific embodiment of the present invention, this embodiment provides a specific structure of an electrode clamping assembly 36. One side of the cathode plate 32 and the anode plate 31 is designed as an electrode connector 312. During installation, the connecting groove 311 is inserted into the outside of the support bar 331. At this time, the electrode connector 312 can be inserted between the electrode pressing block 361 and the electrode pressing plate 362. Since the electrode pressing plate 362 has an arc-shaped structure and is elastic, it can make the cathode plate 32 or the anode plate 31 electrically connected to the corresponding positive electrode 34 and negative electrode 35. The electrode pressing block 361 and the electrode pressing plate 362 interact to clamp the electrode connector 312, preventing the cathode plate 32 or the anode plate 31 from detaching from the corresponding electrode clamping assembly 36.

[0046] The material rack 3 of this utility model adopts a horizontal design. Compared with the design of vertical anode plates 31, it has a simpler structure, lighter weight, and stronger operability. The anode plates 31 and cathode plates 32 can be installed by sliding inward, and the anode plates 31 and cathode plates 32 can be disassembled by sliding outward. Therefore, the assembly and disassembly of anode plates 31 and cathode plates 32 can be easily achieved. The material rack 3 of this utility model is designed to install up to ten layers (five layers each of anode plates 31 and cathode plates 32). The number of anode plates 31 and cathode plates 32 can be increased or decreased according to different customer needs. Moreover, the spacing between each anode plate 31 and cathode plate 32 can be adjusted according to cleaning requirements, and the adjustment is quick and easy.

[0047] The anode plate 31, cathode plate 32, and cleaning base 37 are made of aluminum alloy, which can effectively dissipate heat and prevent the workpiece to be cleaned from overheating in the plasma environment, thereby protecting the workpiece. The dense and uniform small holes on the anode plate 31, cathode plate 32, and cleaning base 37 ensure good uniformity of plasma concentration in the cleaning area and high consistency of cleaning effect.

[0048] In this embodiment, the installation steps of the material rack 3 are as follows:

[0049] S1, Assembly of positive electrode 34, negative electrode 35 body;

[0050] S2. Fix the support bar 331 onto the support plate 33;

[0051] S3. Install the anode plate 31 and cathode plate 32 on the support bar 331;

[0052] S4. Install the cleaning base 37 on the anode plate 31 and the cathode plate 32;

[0053] S5. Finally, insert the anode plate 31 and cathode plate 32 into the positive electrode 34 and negative electrode 35 respectively to complete the overall assembly.

[0054] Furthermore, it also includes a cleaning base 37 for placing the workpiece to be cleaned. The cleaning base 37 is detachably fixed to the cathode plate 32 or the anode plate 31. A plurality of insulating pads 371, which are ceramic pads, are provided between the cleaning base 37 and the cathode plate 32 or the anode plate 31. The cleaning base 37 is sized to match the cathode plate 32 or the anode plate 31. The insulating pads 371, the cleaning base 37, and the cathode plate 32 or the anode plate 31 are fixed together with fasteners. The cleaning base 37 also has evenly distributed perforations to allow ions to pass through the workpiece to be cleaned. The insulating pads 371 are made of ceramic.

[0055] Finally, it should be noted that in the description of this utility model, the terms "vertical," "upper," "lower," "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0056] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0057] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A wafer cleaning rack, characterized in that: It includes an anode plate, a cathode plate, a support plate, a positive electrode, and a negative electrode. The cathode plate and the anode plate are parallel to each other and horizontally arranged. A space is left between the cathode plate and the anode plate for placing the workpiece to be cleaned. Perforations are evenly distributed on the cathode plate and the anode plate. There are two support plates, which are located on both sides of the cathode plate and the anode plate respectively. Both sides of the cathode plate and the anode plate are connected to the same support plate. The positive electrode and the negative electrode are arranged along the height direction and are electrically connected to the cathode plate and the anode plate respectively.

2. The wafer cleaning rack according to claim 1, characterized in that: A connecting groove is fixed on both sides of the cathode plate and the anode plate. The connecting groove is horizontally arranged. The support plate has several connecting holes evenly opened along the height direction. The support plate is fixed with a support strip through the connecting holes. The support strip and the connecting groove are slidably engaged.

3. A wafer cleaning rack according to claim 2, characterized in that: The end of the support bar is chamfered.

4. A wafer cleaning rack according to claim 3, characterized in that: Both the positive and negative electrodes include an insulating side plate, an electrode strip, a cover plate, and an electrode clamping assembly. At least two electrode clamping assemblies are installed along the length of one side of the electrode strip. The electrode clamping assemblies are electrically connected to the electrode strip and are used to electrically connect to the cathode plate or anode plate. The cover plate is provided on the side of the electrode strip away from the electrode clamping assembly. The cover plates are distributed along the length of the electrode strip. The insulating side plate is fixedly installed on both sides of the electrode strip and surrounds the electrode clamping assembly.

5. A wafer cleaning rack according to claim 4, characterized in that: The cover plate is made of Teflon material.

6. A wafer cleaning rack according to claim 5, characterized in that: The electrode clamping assembly includes an electrode pressing block and an electrode pressing plate. Both the electrode pressing block and the electrode pressing plate are made of conductive material and are fixed to the electrode strip. The electrode pressing plate has an elastic arched structure. The electrode pressing plate and the electrode pressing block are staggered and the two ends of the electrode pressing plate abut against the two sides of the electrode pressing block, respectively.

7. A wafer cleaning rack according to any one of claims 2-6, characterized in that: It also includes a cleaning base for placing the workpiece to be cleaned, the cleaning base being detachably fixed to the cathode plate or the anode plate, and a number of insulating pads being provided between the cleaning base and the cathode plate or the anode plate.

8. A wafer cleaning rack according to claim 7, characterized in that: The insulating pad is a ceramic pad.

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