A gallium nitride integrated drive module
By introducing an adjustable RC drive circuit and a microprocessor into the gallium nitride integrated drive module, the compatibility problem of gallium nitride devices in the prior art is solved, adaptive voltage and current specification adaptation is achieved, and the stability and heat dissipation efficiency of the drive module are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- BEIJING WEISHI TIANCHENG TECH CO LTD
- Filing Date
- 2025-06-09
- Publication Date
- 2026-06-09
AI Technical Summary
Existing gallium nitride integrated driver modules cannot adapt to the threshold voltage and current specifications of gallium nitride devices of different models or processes, resulting in limited versatility and requiring the redesign of the resistor-capacitor network.
An adjustable RC drive circuit and a microprocessor are used. The microprocessor controls the adjustable RC drive circuit, which is combined with components such as an adjustable resistor module, a multi-level capacitor switching unit, a gate current limiting resistor, a TVS diode, a Schottky diode, a drive buffer, and an energy storage capacitor to achieve adaptive adaptation to the threshold voltage and current specifications of gallium nitride devices.
It enables automatic adaptation to gallium nitride devices of different models or processes, improves the stability and heat dissipation efficiency of the drive module, reduces switching losses, and expands the application range.
Smart Images
Figure CN224343175U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of electronic circuit technology, and in particular to a gallium nitride integrated driver module. Background Technology
[0002] Gallium nitride (GaN) power devices can achieve higher switching frequencies, higher system efficiency, and higher power density. However, the driving mechanism of GaN power devices differs from that of silicon and silicon carbide (SiC) devices.
[0003] A search revealed Chinese Patent Publication No. CN216491180U, which discloses a gallium nitride (GaN) integrated driver module, comprising: a PCB board; a GaN power device and a resistor-capacitor (RC) drive circuit integrated on the PCB board, wherein the GaN power device is flip-chip mounted on the PCB board; and the RC drive circuit is connected to the GaN power device to drive the GaN power device to turn on or off. This utility model's GaN integrated driver module integrates the GaN power device and the RC drive circuit on the PCB board after flip-chip mounting, avoiding parasitic parameters caused by wire bonding. Furthermore, the flip-chip mounting allows heat dissipation from the device through the PCB board, thereby improving the stability of the GaN integrated driver module.
[0004] In practical applications, the aforementioned driving module drives gallium nitride (GaN) devices via a resistor-capacitor (RC) driving circuit. However, the parameters of this circuit (such as resistance and capacitance values) are fixed and only applicable to GaN devices with specific threshold voltages (e.g., 1-2V). When dealing with GaN devices of different models or processes, this makes it incompatible with the threshold voltage and current specifications of different GaN devices, requiring a redesign of the RC network and limiting its versatility. Utility Model Content
[0005] To overcome the above shortcomings, this utility model provides a gallium nitride integrated driver module, which aims to solve the problem that the existing technology cannot adapt to the threshold voltage and current specifications of gallium nitride devices of different models or processes, and requires redesigning the resistor-capacitor network, resulting in limited versatility.
[0006] To achieve the above objectives, the present invention adopts the following technical solution: a gallium nitride integrated driver module, comprising an integrated board, on which gallium nitride power devices are flip-chip mounted, an adjustable RC drive circuit and a microprocessor are mounted, the microprocessor is electrically connected to the adjustable RC drive circuit and the gallium nitride power devices, and the adjustable RC drive circuit and the gallium nitride power devices are electrically connected.
[0007] The above technical solution provides support for the adjustable RC drive circuit, microprocessor, and gallium nitride power device through an integrated board. The microprocessor controls the adjustable RC drive circuit, enabling it to adapt to the threshold voltage of the gallium nitride power device. This solves the problem that existing technologies cannot adapt to the threshold voltage and current specifications of different types or processes of gallium nitride devices, requiring the redesign of the RC network and resulting in limited versatility.
[0008] As a further description of the above technical solution:
[0009] The integrated board is a ceramic substrate, a metal-based circuit board, a flexible circuit board, or a silicon-based integrated substrate.
[0010] The above technical solution integrates the heat dissipation substrate and PCB board into a ceramic substrate, metal-based circuit board, flexible circuit board, or silicon-based integrated substrate, thereby improving the heat dissipation efficiency of the drive module while achieving its integration.
[0011] As a further description of the above technical solution:
[0012] The adjustable RC drive circuit includes an adjustable resistor module, a gate current-limiting resistor, a TVS diode, a multi-level capacitor switching unit, a Schottky diode, a drive buffer, and an energy storage capacitor. The microprocessor is electrically connected to the multi-level capacitor switching unit and the drive buffer. One end of the drive buffer is electrically connected to one end of the adjustable resistor module. The other end of the adjustable resistor module is electrically connected to one end of the gate current-limiting resistor. The other end of the gate current-limiting resistor is electrically connected to the gate of the gallium nitride power device. The multi-level capacitor switching unit, the TVS diode, and the energy storage capacitor are all electrically connected between the gate and source of the gallium nitride power device. The gate of the gallium nitride power device is electrically connected to the anode of the Schottky diode. The cathode of the Schottky diode is electrically connected to the anode of the energy storage capacitor.
[0013] The above technical solution achieves the function of adapting the adjustable resistor-capacitor drive circuit to gallium nitride devices through the cooperation between the adjustable resistor module, gate current limiting resistor, TVS diode, multi-level capacitor switching unit, Schottky diode, drive buffer, energy storage capacitor and microprocessor.
[0014] As a further description of the above technical solution:
[0015] The multi-level capacitor switching unit includes multiple capacitors and a high-speed analog switch. The high-speed analog switch and the multiple capacitors are electrically connected. The two ends of the high-speed analog switch are electrically connected to the gate and source of the gallium nitride power device, respectively. The range of the multiple capacitors is 10nF-1μF.
[0016] The above technical solution allows for the control and selection of capacitors at different speeds via a high-speed analog switch, thereby helping to adapt to the functions of different gallium nitride power devices.
[0017] As a further description of the above technical solution:
[0018] The source of the gallium nitride power device is grounded.
[0019] The above technical solution enables functions such as providing a reference potential, forming a current loop, suppressing electromagnetic interference (EMI) and noise, and protecting device safety by grounding the source of gallium nitride power devices.
[0020] As a further description of the above technical solution:
[0021] The microprocessor is electrically connected to a sampling circuit, which is electrically connected to a gallium nitride power device.
[0022] The above technical solution involves acquiring parameters of gallium nitride power devices through a sampling circuit and transmitting them to a microprocessor. The microprocessor then outputs corresponding control signals, thereby enabling the adjustable RC drive circuit to automatically adapt to gallium nitride power devices.
[0023] As a further description of the above technical solution:
[0024] The microprocessor is electrically connected to a high-speed analog switch via an SPI interface.
[0025] The above technical solution enables the microprocessor to control a high-speed analog switch to select capacitors at different levels via the SPI interface, thereby facilitating the adjustment function of the multi-level capacitor switching unit.
[0026] As a further description of the above technical solution:
[0027] The adjustable resistor module is a digital potentiometer, and the microprocessor and the adjustable resistor module are electrically connected via an SPI interface.
[0028] The above technical solution enables the microprocessor to control the adjustable resistor module to adjust its own resistance value through the SPI interface, thereby helping to realize the function of adjusting the resistance value of the adjustable resistor module.
[0029] This utility model has the following beneficial effects:
[0030] In this invention, an integrated board provides support for the adjustable RC drive circuit, the microprocessor, and the gallium nitride power device. The microprocessor collects and analyzes the parameters of the gallium nitride power device and controls the adjustable RC drive circuit. This solves the problem that existing technologies cannot adapt to the threshold voltage and current specifications of different gallium nitride devices of different models or processes, requiring the redesign of the RC network and thus limiting versatility.
[0031] In this invention, the adjustable resistor-capacitor drive circuit achieves adaptive adaptation to gallium nitride power devices through the control of a microprocessor, the adjustment of an adjustable resistor module and a multi-level capacitor switching unit, and the cooperation between the gate current-limiting resistor, TVS diode, Schottky diode, drive buffer, and energy storage capacitor. Attached Figure Description
[0032] Figure 1 This is a schematic diagram of the overall architecture of a gallium nitride integrated driver module proposed in this utility model;
[0033] Figure 2 This is a schematic diagram of a multi-level capacitor switching unit architecture for a gallium nitride integrated driving module proposed in this utility model.
[0034] Figure 3 This is a schematic diagram of a high-speed analog switch architecture for a gallium nitride integrated driver module proposed in this utility model;
[0035] Figure 4 This is a three-dimensional structural diagram of the integrated board of a gallium nitride integrated driver module proposed in this utility model.
[0036] Legend:
[0037] 1. Integrated board. Detailed Implementation
[0038] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0039] Reference Figure 1 and Figure 4The present invention provides an embodiment of a gallium nitride integrated driver module, including an integrated board 1, on which gallium nitride power devices are flip-chip mounted, an adjustable RC drive circuit and a microprocessor are mounted on the integrated board 1, and the microprocessor is electrically connected to the adjustable RC drive circuit and the gallium nitride power devices. The adjustable RC drive circuit and the gallium nitride power devices are electrically connected.
[0040] Specifically, by mounting the microprocessor, gallium nitride power devices, and adjustable resistor-capacitor (RC) drive circuit on integrated board 1, the stability of the drive module is improved. Furthermore, the gallium nitride power devices can feed back their parameters to the microprocessor, which then controls and adjusts the adjustable RC drive circuit. This allows the adjustable RC drive circuit to adapt to the threshold voltage and current specifications of the gallium nitride power devices. This solves the problem in existing technologies where different models or processes of gallium nitride devices cannot be adapted to their threshold voltage and current specifications, requiring redesign of the RC network and thus limiting versatility.
[0041] Reference Figure 4 Integrated board 1 is a ceramic substrate, a metal-based circuit board, a flexible circuit board, or a silicon-based integrated substrate;
[0042] Specifically, ceramic substrates, metal-based circuit boards, flexible circuit boards, or silicon-based integrated substrates are integrated into heat dissipation substrates and PCBs, which not only achieve circuit integration but also improve the heat dissipation capacity of components on the circuit.
[0043] Reference Figure 1 The adjustable resistor-capacitor drive circuit includes an adjustable resistor module, a gate current-limiting resistor, a TVS diode, a multi-level capacitor switching unit, a Schottky diode, a drive buffer, and an energy storage capacitor. The microprocessor is electrically connected to the multi-level capacitor switching unit and the drive buffer. One end of the drive buffer is electrically connected to one end of the adjustable resistor module. The other end of the adjustable resistor module is electrically connected to one end of the gate current-limiting resistor. The other end of the gate current-limiting resistor is electrically connected to the gate of the gallium nitride power device. The multi-level capacitor switching unit, the TVS diode, and the energy storage capacitor are all electrically connected between the gate and the source of the gallium nitride power device. The gate of the gallium nitride power device is electrically connected to the anode of the Schottky diode. The cathode of the Schottky diode is electrically connected to the positive terminal of the energy storage capacitor.
[0044] Specifically, TVS diodes, or transient voltage suppressor diodes, can use a clamping voltage of ±12V to suppress transient overvoltages on the gate of gallium nitride power devices and prevent voltage spikes from breaking down the devices.
[0045] In the adjustable RC drive circuit of this gallium nitride (GaN) drive module, the microprocessor processes and analyzes the parameters of the GaN drive module itself, enabling the microprocessor to output corresponding control signals. The weak control signals are amplified and isolated from the power circuit by the drive buffer. The microprocessor controls the adjustable resistor module to adjust its own resistance value and to divide the voltage in series with the gate current-limiting resistor, thereby dynamically adjusting the charging time constant and controlling the switching speed. Then, the microprocessor controls the multi-level capacitor switching unit to connect a small capacitor to accelerate charging when turned on and a large capacitor to smooth the process when turned off. Through the energy storage capacitor and Schottky diode, a stable negative voltage is provided and the Miller effect is suppressed when turned off. The TVS diode conducts rapidly (<1ns) when there is an overvoltage (greater than 12V), clamping the gate voltage within a safe range. This achieves automatic adaptation of the adjustable RC drive circuit to the GaN device, thereby reducing switching losses and improving efficiency, as well as improving the reliability and application range of the GaN device.
[0046] Reference Figure 1 , Figure 2 and Figure 3 The multi-level capacitor switching unit includes multiple capacitors and a high-speed analog switch. The high-speed analog switch and the multiple capacitors are electrically connected. The two ends of the high-speed analog switch are electrically connected to the gate and source of the gallium nitride power device, respectively. The range of the multiple capacitors is 10nF-1μF.
[0047] Specifically, multiple capacitors can be set to three: the first capacitor is 10nF, the second capacitor is 100nF, and the third capacitor is 1μF. Different capacitors are selected by switching different channels through a high-speed analog switch, with a corresponding time constant from 0.1μs to 10ms. By switching different channels through the high-speed analog switch, different capacitor levels can be selected. When turned off, the stored energy is released to provide a negative voltage to the gate of the gallium nitride device, preventing the gallium nitride device from being mistakenly turned on due to the Miller effect and ensuring reliable turn-off.
[0048] Reference Figure 1 The source of gallium nitride power devices is grounded;
[0049] Specifically, by grounding the source of gallium nitride power devices, a unified reference ground is provided for adjustable RC drive circuits (such as multi-level capacitor switching units, TVS diodes, and energy storage capacitors), ensuring the accuracy of signal transmission and providing a stable working foundation for gallium nitride devices.
[0050] Reference Figure 1 The microprocessor is electrically connected to a sampling circuit, which is electrically connected to a gallium nitride power device;
[0051] Specifically, the sampling circuit includes a thermistor, a current sensor, and a voltage sensor. All three sensors are electrically connected to the gallium nitride power device to collect the current, voltage, and temperature of the gallium nitride device. The data is then transmitted to a microprocessor for processing and analysis. The microprocessor then controls an adjustable RC drive circuit to adapt to the gallium nitride device, thereby enabling the automatic adaptation function of the drive module.
[0052] Reference Figure 1 The microprocessor is electrically connected to a high-speed analog switch via an SPI interface;
[0053] Specifically, the microprocessor transmits control signals through the SPI interface to control the high-speed analog switch, adjust the analog switch channel, and select appropriate capacitors, thereby adjusting the multi-level capacitor switching unit.
[0054] Reference Figure 1 The adjustable resistor module is a digital potentiometer, and the microprocessor and the adjustable resistor module are electrically connected via an SPI interface.
[0055] Specifically, the digital potentiometer can use the MCP4131-103E / CH, 10kΩ, controlled by an SPI interface, which is existing technology. The microprocessor and the adjustable resistor module transmit signals via SPI. The microprocessor controls the adjustable resistor module to adjust its own resistance, thereby adjusting the charging time constant of the circuit in the drive module, and thus controlling the rise rate of the gate voltage of the gallium nitride device.
[0056] Working principle: By mounting gallium nitride devices onto integrated board 1, the parameter data (current, voltage and temperature) of gallium nitride devices are collected by the sampling circuit. Through the electrical connection between the sampling circuit and the microprocessor, the data is transmitted to the microprocessor for processing and analysis. Then, the microprocessor outputs a control signal, which causes the adjustable resistor module to adjust its own resistance and the voltage divider in series with the gate current limiting resistor, so as to dynamically adjust the charging time constant and thus control the switching speed.
[0057] Meanwhile, the weak control signal output by the microprocessor is amplified and isolated from the power circuit by a drive buffer. The high-speed analog switch in the multi-level capacitor switching unit is controlled by the microprocessor to connect a small capacitor to accelerate charging when turned on and a large capacitor to smooth the process when turned off. In addition, the energy storage capacitor works with the Schottky diode to provide a stable negative voltage and suppress the Miller effect when turned off. The TVS diode conducts quickly (<1ns) when there is an overvoltage (greater than 12V), clamping the gate voltage within a safe range. This enables the adjustable RC drive circuit to automatically adapt to gallium nitride devices, thus solving the problem that the existing technology cannot adapt to the threshold voltage and current specifications of different gallium nitride devices of different models or processes, requiring the redesign of the RC network and resulting in limited versatility.
[0058] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. A gallium nitride integrated driver module, comprising an integrated board (1), characterized in that: Gallium nitride power devices are flip-chip mounted on the integrated board (1). An adjustable RC drive circuit and a microprocessor are mounted on the integrated board (1). The microprocessor is electrically connected to the adjustable RC drive circuit and the gallium nitride power devices. The adjustable RC drive circuit and the gallium nitride power devices are electrically connected.
2. The gallium nitride integrated driver module according to claim 1, characterized in that: The integrated board (1) is a ceramic substrate, a metal-based circuit board, a flexible circuit board, or a silicon-based integrated substrate.
3. The gallium nitride integrated driver module according to claim 1, characterized in that: The adjustable RC drive circuit includes an adjustable resistor module, a gate current-limiting resistor, a TVS diode, a multi-level capacitor switching unit, a Schottky diode, a drive buffer, and an energy storage capacitor. The microprocessor is electrically connected to the multi-level capacitor switching unit and the drive buffer. One end of the drive buffer is electrically connected to one end of the adjustable resistor module. The other end of the adjustable resistor module is electrically connected to one end of the gate current-limiting resistor. The other end of the gate current-limiting resistor is electrically connected to the gate of the gallium nitride power device. The multi-level capacitor switching unit, the TVS diode, and the energy storage capacitor are all electrically connected between the gate and source of the gallium nitride power device. The gate of the gallium nitride power device is electrically connected to the anode of the Schottky diode. The cathode of the Schottky diode is electrically connected to the anode of the energy storage capacitor.
4. A gallium nitride integrated driver module according to claim 3, characterized in that: The multi-level capacitor switching unit includes multiple capacitors and a high-speed analog switch. The high-speed analog switch and the multiple capacitors are electrically connected. The two ends of the high-speed analog switch are electrically connected to the gate and source of the gallium nitride power device, respectively. The range of the multiple capacitors is 10nF-1μF.
5. A gallium nitride integrated driver module according to claim 3, characterized in that: The source of the gallium nitride power device is grounded.
6. A gallium nitride integrated driver module according to claim 5, characterized in that: The microprocessor is electrically connected to a sampling circuit, which is electrically connected to a gallium nitride power device.
7. A gallium nitride integrated driver module according to claim 4, characterized in that: The microprocessor is electrically connected to a high-speed analog switch via an SPI interface.
8. A gallium nitride integrated driver module according to claim 3, characterized in that: The adjustable resistor module is a digital potentiometer, and the microprocessor and the adjustable resistor module are electrically connected via an SPI interface.