Auxiliary tool for n-type silicon wafer gettering

Abstract

The utility model relates to photovoltaic manufacturing technical field, concretely is N type silicon wafer gettering with auxiliary tool, including N type silicon wafer annealing gettering's annealing gettering auxiliary jar, the top of annealing gettering auxiliary jar is installed with atomization mixing chamber, and the both sides outer wall symmetry of atomization mixing chamber is installed with inlet pipe and mixed discharge pipe. The utility model discloses the annealing gettering auxiliary jar of setting is used as the core container of N type silicon wafer annealing gettering process, provides stable processing space for silicon wafer;Its top installation atomization mixing chamber, by the inlet pipe and mixed discharge pipe of both sides outer wall symmetry setting, realize the orderly input, mixing and output of gas, guarantee the circulation and reaction of gas in the process;The ultrasonic atomizer of atomization mixing chamber bottom surface inlaying, cooperate the sponge liquid suction pipe of bottom connection and passing through atomization mixing chamber bottom and extending to the inside of annealing gettering auxiliary jar, can effectively atomize the liquid in the jar and participate in gas mixing, enhance the uniformity and efficiency of reaction.

Description

Technical Field

[0001] This utility model relates to the field of photovoltaic manufacturing technology, specifically to an auxiliary tooling for gettering N-type silicon wafers. Background Technology

[0002] In the ongoing development of the photovoltaic field, N-type silicon wafers have gradually become a key material in photovoltaic cell manufacturing due to their significant advantages such as high conversion efficiency and low degradation rate. However, during the production and processing of N-type silicon wafers, metallic impurities are inevitably introduced. These impurities act like "invisible killers," severely damaging the crystal structure of the silicon wafer, interfering with carrier transport, and consequently significantly reducing the electrical performance of the silicon wafer and shortening the lifespan of the cell. Therefore, gettering, as a crucial step in removing metallic impurities and improving silicon wafer quality, has received widespread attention. Publication (announcement) number CN115775845A discloses a gettering method for N-type silicon wafers, providing some ideas and technical solutions for solving the gettering problem of N-type silicon wafers.

[0003] While the gettering method disclosed in Publication No. CN115775845A has achieved some success in gettering N-type silicon wafers, it still reveals several shortcomings in practical applications. In the gas mixing and transport stage, this gettering method may lack effective devices to ensure thorough mixing of the gas and liquid. Incomplete mixing of gas and liquid can lead to incomplete reactions; some areas may fail to effectively remove metal impurities due to insufficient reactant concentration, while other areas may experience localized overheating due to overly concentrated reactions. Furthermore, the lack of a device to prevent gas backflow is a significant drawback. Gas backflow may bring the already reacted mixed gas back to the reaction area, interfering with the normal reaction process, resulting in uneven gas composition, and further affecting the uniformity and efficiency of gettering. Utility Model Content

[0004] The purpose of this invention is to provide an auxiliary tooling for gettering N-type silicon wafers, in order to solve the problem of uneven gas-liquid mixing in the gas mixing and conveying process of existing N-type silicon wafer gettering as mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] An auxiliary tooling for gettering N-type silicon wafers includes an annealing gettering auxiliary tank for annealing N-type silicon wafers. An atomizing mixing chamber is installed on the top of the annealing gettering auxiliary tank. An air inlet pipe and a mixing outlet pipe are symmetrically installed on the outer walls of both sides of the atomizing mixing chamber. A constant temperature chamber is provided at the bottom of the annealing gettering auxiliary tank.

[0007] An ultrasonic atomizer is embedded in the bottom surface of the atomizing mixing chamber. A sponge suction tube is connected to the bottom of the ultrasonic atomizer. The sponge suction tube passes through the bottom of the atomizing mixing chamber and extends into the annealing impurity suction auxiliary tank.

[0008] The outer surface of the constant temperature chamber is provided with an insulated shell, and the inner wall of the constant temperature chamber is equipped with a ring-shaped constant temperature heating element.

[0009] Preferably, the annealing getter auxiliary tank has a liquid inlet at the top, allowing operators to easily and quickly add the required liquid reagents into the tank. This design avoids complex liquid addition procedures, reduces the risk of liquid leakage or inaccurate addition due to inconvenient liquid addition, ensures accurate addition of reactants in the gettering process, provides a stable material basis for subsequent gettering reactions, and helps improve the gettering effect and process stability.

[0010] Preferably, a check valve is installed at the end of the mixing discharge pipe to effectively prevent backflow of the mixed gas. During the gettering process, stable gas flow is crucial for the smooth progress of the reaction. The check valve ensures that the mixed gas can only be discharged in a predetermined direction, avoiding problems such as reaction disturbances and uneven mixing of gas components that may be caused by gas backflow. This ensures the stability and reliability of the gettering process and improves gettering efficiency.

[0011] Preferably, a temperature display screen is installed on the outer wall of the constant temperature chamber to monitor the internal temperature, allowing operators to understand the temperature inside the chamber in real time and intuitively. Temperature is one of the key factors affecting the getter reaction. Through the temperature display screen, operators can promptly grasp temperature changes and make precise adjustments as needed to ensure that the getter reaction takes place in a suitable temperature environment, which is beneficial to improving the efficiency of the getter reaction and the consistency of product quality.

[0012] Preferably, the annealing gettering auxiliary tank includes an oxygen input auxiliary tank and a nitrogen input auxiliary tank. The oxygen input auxiliary tank is filled with purified water, and its inlet pipe is connected to an external oxygen supply pipe. The nitrogen input auxiliary tank is filled with phosphorus oxychloride liquid, and its inlet pipe is connected to an external nitrogen supply pipe. Oxygen and nitrogen react with their respective liquids, achieving an effective combination of different gettering mechanisms. This allows for a more comprehensive and effective removal of metallic impurities from N-type silicon wafers, improving the gettering effect and meeting the requirements for high-quality N-type silicon wafer production.

[0013] Preferably, the temperature inside the constant temperature chamber of the oxygen input auxiliary tank is 10°C, and the temperature inside the constant temperature chamber of the nitrogen input auxiliary tank is 20°C. By precisely setting the temperature, the reactions of oxygen with pure water and nitrogen with phosphorus oxychloride liquid can be carried out in their respective most suitable temperature environments, thereby improving reaction efficiency and gettering effect and ensuring the high-quality completion of the N-type silicon wafer gettering process.

[0014] Compared with existing technologies, the advantages of this utility model are as follows: In this auxiliary tooling for N-type silicon wafer gettering, the annealing gettering auxiliary tank serves as the core container for the annealing gettering process of N-type silicon wafers, providing a stable processing space for the silicon wafers; the atomizing mixing chamber installed on its top, with the help of the symmetrically arranged air inlet pipes and mixing outlet pipes on both outer walls, realizes the orderly input, mixing and output of gas, ensuring the flow and reaction of gas during the process; the ultrasonic atomizer embedded in the bottom surface of the atomizing mixing chamber, together with the sponge liquid suction tube connected to the bottom and passing through the bottom of the atomizing mixing chamber and extending into the interior of the annealing gettering auxiliary tank, can effectively atomize the liquid in the tank and participate in gas mixing, enhancing the uniformity and efficiency of the reaction; the constant temperature bottom box set at the bottom of the annealing gettering auxiliary tank, the heat-insulating shell on its outer surface can reduce heat loss, and the annular constant temperature heating plate installed on the inner wall can accurately maintain the constant temperature environment inside the tank, ensuring that the annealing gettering process is carried out under stable temperature conditions. The cooperation of each structure significantly improves the effect of annealing gettering of N-type silicon wafers. Attached Figure Description

[0015] The accompanying drawings are provided to further illustrate the present invention and form part of the specification. They are explained in detail together with the embodiments of the present invention, but do not constitute a limitation thereof.

[0016] Figure 1 This is a schematic diagram of the structure of this utility model;

[0017] Figure 2 This is a schematic diagram of the cross-sectional structure of the present invention;

[0018] Figure 3 This is a schematic diagram of the structure of this utility model in use;

[0019] 10. Annealing impurity suction auxiliary tank; 11. Liquid filling port;

[0020] 20. Atomizing mixing chamber; 21. Ultrasonic nebulizer; 22. Sponge suction tube;

[0021] 30. Air intake pipe;

[0022] 40. Mixing discharge pipe; 41. Check valve;

[0023] 50. Constant temperature chamber; 51. Temperature display screen; 52. Constant temperature heating element; 53. Insulation shell;

[0024] 60. Oxygen input auxiliary tank;

[0025] 70. Nitrogen input auxiliary tank;

[0026] 80. High-temperature annealing furnace. Detailed Implementation

[0027] The technical solutions of the present utility model will be clearly and completely described below with reference to the embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0028] In the description of this utility model, it should be understood that the terms "center", "vertical", "horizontal", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only used to facilitate the description of this utility model and to simplify the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0029] Auxiliary tooling for gettering N-type silicon wafers, such as Figures 1-3As shown, the annealing and gettering auxiliary container 10 for N-type silicon wafer annealing and gettering is provided. An atomizing mixing chamber 20 is installed on the top of the annealing and gettering auxiliary container 10. An air inlet pipe 30 and a mixing outlet pipe 40 are symmetrically installed on the outer walls of both sides of the atomizing mixing chamber 20. A constant temperature chamber 50 is provided at the bottom of the annealing and gettering auxiliary container 10. An ultrasonic atomizer 21 is embedded in the bottom surface of the atomizing mixing chamber 20. A sponge suction tube 22 is connected to the bottom of the ultrasonic atomizer 21, passing through the bottom of the atomizing mixing chamber 20 and extending into the interior of the annealing and gettering auxiliary container 10. An insulating shell 53 is provided on the outer surface of the constant temperature chamber 50, and a ring-shaped constant temperature heating element 52 is installed on the inner wall of the constant temperature chamber 50. The annealing and gettering auxiliary container 10 serves as the core container for the annealing and gettering process of N-type silicon wafers, providing a stable processing space for the silicon wafers. Its top is equipped with... The atomizing mixing chamber 20, with its symmetrically arranged air inlet pipes 30 and mixing outlet pipes 40 on both outer walls, achieves orderly gas input, mixing, and output, ensuring gas flow and reaction during the process. The ultrasonic atomizer 21 embedded in the bottom of the atomizing mixing chamber 20, together with the sponge liquid suction pipe 22 connected to the bottom and extending through the bottom of the atomizing mixing chamber 20 into the annealing getter auxiliary tank 10, can effectively atomize the liquid in the tank and participate in gas mixing, enhancing the uniformity and efficiency of the reaction. The constant temperature bottom chamber 50 set at the bottom of the annealing getter auxiliary tank 10 has an insulating shell 53 on its outer surface to reduce heat loss, and a ring-shaped constant temperature heating plate 52 installed on the inner wall to accurately maintain a constant temperature environment inside the tank, ensuring that the annealing getter process is carried out under stable temperature conditions. The cooperation of these structures significantly improves the annealing getter effect of N-type silicon wafers.

[0030] Furthermore, the top of the annealing getter auxiliary tank 10 is provided with a liquid inlet 11, which allows for convenient addition of the required liquid into the tank, providing the necessary reactants for the annealing getter process.

[0031] Specifically, a check valve 41 is installed at the end of the mixing discharge pipe 40, which allows the mixed gas to flow out in one direction only, effectively preventing gas backflow and ensuring the stability and safety of gas flow during the process.

[0032] The constant temperature chamber 50 is equipped with a temperature display screen 51 on its outer wall for monitoring the internal temperature, which allows operators to understand the temperature inside the constant temperature chamber 50 in real time and intuitively, so as to adjust and control the temperature parameters in a timely manner.

[0033] In addition, the annealing getter auxiliary tank 10 includes an oxygen input auxiliary tank 60 and a nitrogen input auxiliary tank 70. The mixing and discharge pipes 40 of both the oxygen input auxiliary tank 60 and the nitrogen input auxiliary tank 70 are connected to the high-temperature annealing furnace. Pure water is added to the oxygen input auxiliary tank 60, and its inlet pipe 30 is connected to an external oxygen supply pipe. Phosphorus oxychloride liquid is added to the nitrogen input auxiliary tank 70, and its inlet pipe 30 is connected to an external nitrogen supply pipe. The temperature inside the constant temperature chamber 50 of the oxygen input auxiliary tank 60 is 10°C, and the temperature inside the constant temperature chamber 50 of the nitrogen input auxiliary tank 70 is 20°C. This allows for the provision of suitable reaction environments according to the characteristics of different gases, ensuring that oxygen and nitrogen are fully mixed and reacted with their respective liquids before being input into the high-temperature annealing furnace in the best possible condition to participate in the annealing getter process of N-type silicon wafers, thereby improving the process effect.

[0034] The working principle of this N-type silicon wafer getter auxiliary tooling:

[0035] First, add an appropriate amount of pure water to the oxygen input auxiliary tank 60 through the liquid inlet 11 at the top of the annealing and cleaning auxiliary tank 10, and add phosphorus oxychloride liquid to the nitrogen input auxiliary tank 70; then, connect the air inlet pipe 30 of the oxygen input auxiliary tank 60 to the external oxygen supply pipe, and connect the air inlet pipe 30 of the nitrogen input auxiliary tank 70 to the external nitrogen supply pipe.

[0036] Then, turn on the constant temperature chamber 50, observe and adjust it through the temperature display screen 51 to stabilize the temperature inside the constant temperature chamber 50 of the oxygen input auxiliary tank 60 at 10℃ and the temperature inside the constant temperature chamber 50 of the nitrogen input auxiliary tank 70 at 20℃; at the same time, start the ultrasonic atomizer 21 in the atomization mixing chamber 20, and the sponge suction tube 22 draws the liquid in the tank into the atomizer for atomization.

[0037] Subsequently, oxygen and nitrogen enter the corresponding atomizing mixing chamber 20 from the inlet pipe 30, and are fully mixed with the atomized liquid. The mixed gas is then stably fed into the high-temperature annealing furnace through the mixing outlet pipe 40, under the backflow prevention protection of the check valve 41, to participate in the annealing and gettering process of the N-type silicon wafer.

[0038] Throughout the process, the various structures work together to provide stable and suitable reaction conditions for the annealing and gettering of N-type silicon wafers.

[0039] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. An auxiliary tooling for gettering N-type silicon wafers, characterized in that: The annealing and gettering auxiliary tank (10) for N-type silicon wafer annealing and gettering is provided. The top of the annealing and gettering auxiliary tank (10) is equipped with an atomizing mixing chamber (20). The outer walls of the atomizing mixing chamber (20) are symmetrically equipped with an air inlet pipe (30) and a mixing outlet pipe (40). The bottom of the annealing and gettering auxiliary tank (10) is provided with a constant temperature bottom chamber (50). An ultrasonic atomizer (21) is embedded in the bottom surface of the atomizing mixing chamber (20). A sponge suction tube (22) is connected to the bottom of the ultrasonic atomizer (21). The sponge suction tube (22) passes through the bottom of the atomizing mixing chamber (20) and extends into the annealing impurity suction auxiliary tank (10). The outer surface of the constant temperature chamber (50) is provided with a heat-insulating shell (53), and a ring-shaped constant temperature heating element (52) is installed on the inner wall of the constant temperature chamber (50).

2. The auxiliary tooling for gettering N-type silicon wafers according to claim 1, characterized in that: The top of the annealing impermeable auxiliary tank (10) is provided with a liquid inlet (11).

3. The auxiliary tooling for gettering N-type silicon wafers according to claim 1, characterized in that: A check valve (41) is installed at the end of the mixing discharge pipe (40).

4. The auxiliary tooling for gettering N-type silicon wafers according to claim 1, characterized in that: A temperature display screen (51) for monitoring the internal temperature is installed on the outer wall of the constant temperature chamber (50).

5. The auxiliary tooling for gettering N-type silicon wafers according to claim 1, characterized in that: The annealing and impurity removal auxiliary tank (10) includes an oxygen input auxiliary tank (60) and a nitrogen input auxiliary tank (70). Pure water is added inside the oxygen input auxiliary tank (60), and the air inlet pipe (30) of the oxygen input auxiliary tank (60) is connected to an external oxygen supply pipe.

6. The auxiliary tooling for gettering N-type silicon wafers according to claim 5, characterized in that: Phosphorus oxychloride liquid is added inside the nitrogen input auxiliary tank (70), and the inlet pipe (30) of the nitrogen input auxiliary tank (70) is connected to an external nitrogen supply pipe.

7. The auxiliary tooling for gettering N-type silicon wafers according to claim 6, characterized in that: The temperature inside the constant temperature chamber (50) of the oxygen input auxiliary tank (60) is 10°C, and the temperature inside the constant temperature chamber (50) of the nitrogen input auxiliary tank (70) is 20°C.

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