Micro LED micro display chip
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- RAYSOLVE OPTOELECTRONICS (SUZHOU) CO LTD
- Filing Date
- 2025-06-18
- Publication Date
- 2026-06-23
Smart Images
Figure CN224402030U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of micro-display technology, specifically relating to a Micro LED micro-display chip. Background Technology
[0002] Micro LED, also known as micro light-emitting diode, refers to a high-density integrated LED array. It is achieved through LED miniaturization and matrixing. Compared to traditional LED displays, Micro LEDs differ in their chip manufacturing, packaging, integration processes, backplanes, and driving mechanisms. In Micro LEDs, each LED pixel unit is self-emissive. Because a higher integration density can be achieved on a chip of the same area, the photoelectric conversion efficiency of Micro LEDs is greatly improved, enabling high-resolution, high-brightness display designs.
[0003] Full-color microdisplays have wide-ranging and important applications, especially in near-eye displays, including AR and VR. However, there is still considerable room for improvement in the technology to realize full-color microdisplays. In particular, in current full-color Micro LED display chips, the RGB primary colors overlap significantly when the LED pixel units used to emit different colors of light are stacked, resulting in low luminous efficiency. Furthermore, the LED pixel units need to be fabricated in a specific order, which is quite challenging. Utility Model Content
[0004] In view of this, this application provides a Micro LED microdisplay chip, the main purpose of which is to improve the stability and brightness of full-color light emission.
[0005] To achieve the above objectives, this application mainly provides the following technical solutions:
[0006] This application provides a Micro LED microdisplay chip, comprising:
[0007] The driver panel includes a first common contact, a second common contact, a third common contact, and multiple driver contacts;
[0008] It has three light-emitting layers, including a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer;
[0009] The first light-emitting layer is disposed above the driving panel and includes a plurality of first LED units arranged in an array that can emit light of a first color. The second doped semiconductor layer of the plurality of first LED units is electrically connected to the first common contact.
[0010] The second light-emitting layer is disposed above the first light-emitting layer and includes a plurality of second LED units arranged in an array that can emit light of a second color. The second doped semiconductor layer of the plurality of second LED units is electrically connected to the second common contact.
[0011] The third light-emitting layer is disposed above the second light-emitting layer and includes a plurality of third LED units arranged in an array that can emit a third color light. The second doped semiconductor layer of the plurality of third LED units is electrically connected to the third common contact.
[0012] At least one first LED unit, at least one second LED unit, and at least one third LED unit constitute a full-color pixel unit;
[0013] On the driving panel, the orthographic projections of the first LED unit, the second LED unit, and the third LED unit in a full-color pixel unit do not overlap; the first doped semiconductor layer of the first LED unit, the first doped semiconductor layer of the second LED unit, and the first doped semiconductor layer of the third LED unit in a full-color pixel unit are electrically connected to the same driving contact.
[0014] An insulating structure is provided between two adjacent full-color pixel units; the first LED unit, the second LED unit, and the third LED unit in a full-color pixel unit are driven individually by the driving panel through time-division multiplexing.
[0015] Optionally, the Micro LED microdisplay chip further includes:
[0016] A first planarization layer is used to fill in the first light-emitting layer, and the first planarization layer is located between the first light-emitting layer and the second light-emitting layer;
[0017] A second planarization layer is used to fill in the second light-emitting layer, and the second planarization layer is located between the second light-emitting layer and the third light-emitting layer;
[0018] A third planarization layer is used to fill in the third light-emitting layer, and the third planarization layer is disposed on the third light-emitting layer.
[0019] Optionally, the Micro LED microdisplay chip further includes:
[0020] The first bonding layer is located between the driving panel and the first LED unit. Under the action of the insulating structure between two adjacent full-color pixel units, the first bonding layer is divided into a plurality of independent and electrically isolated first pixel driving areas, and the plurality of first pixel driving areas correspond one-to-one with the plurality of first LED units.
[0021] The second bonding layer is located between the first planarization layer and the second LED unit. Under the action of the insulating structure between two adjacent full-color pixel units, the second bonding layer is divided into a plurality of independent and electrically isolated second pixel driving regions. The plurality of second pixel driving regions correspond one-to-one with the plurality of second LED units.
[0022] The third bonding layer is located between the second planarization layer and the third LED unit. Under the action of the insulating structure between two adjacent full-color pixel units, the third bonding layer is divided into multiple independent and electrically isolated third pixel driving regions, and the multiple third pixel driving regions correspond one-to-one with the multiple third LED units.
[0023] Optionally, the Micro LED microdisplay chip further includes:
[0024] Multiple conductive pillars are disposed on and connected to the corresponding driving contacts; and the conductive pillars are connected to the corresponding first pixel driving area in the first bonding layer, the corresponding second pixel driving area in the second bonding layer, and the corresponding third pixel driving area in the third bonding layer.
[0025] Optionally, the second bonding layer has a first opening at the position corresponding to the first LED unit;
[0026] The third bonding layer has a second opening at the position corresponding to the first LED unit;
[0027] The third bonding layer has a third opening at the position corresponding to the second LED unit;
[0028] The conductive post penetrates the corresponding first opening, second opening, and third opening.
[0029] Optionally, the first planarization layer has a plurality of first through holes, and the plurality of first through holes are respectively disposed around a plurality of first LED units;
[0030] The second planarization layer has a plurality of second through holes, which are respectively arranged around a plurality of second LED units;
[0031] The third planarization layer has a plurality of third through holes, and the plurality of third through holes are respectively arranged around the plurality of third LED units;
[0032] The second planarization layer also has a plurality of fourth through holes, which are disposed relative to a plurality of first through holes;
[0033] The third planarization layer also has a plurality of fifth through holes, which are disposed relative to the plurality of fourth through holes;
[0034] The first through hole, the corresponding fourth through hole, and the corresponding fifth through hole are sequentially connected, and form a first recessed area between them and the first LED unit;
[0035] The third planarization layer also has a plurality of sixth through holes, which are disposed relative to a plurality of second through holes; the sixth through holes communicate with the second through holes and form a second recessed region between them and the second LED unit;
[0036] A third recessed area is formed between the third through hole and the third LED unit.
[0037] Optionally, the Micro LED microdisplay chip further includes:
[0038] A leveling layer, comprising a first leveling unit, a second leveling unit, and a third leveling unit; the first leveling unit fills the first recessed area, the second leveling unit fills the second recessed area, and the third leveling unit fills the third recessed area.
[0039] Optionally, the Micro LED microdisplay chip further includes:
[0040] A reflective layer is disposed on the sidewall of at least one of the first recessed region, the second recessed region, and the third recessed region; or
[0041] The reflective layer is disposed on the sidewall of at least one of the first through hole, the second through hole, the third through hole, the fourth through hole, the fifth through hole, and the sixth through hole.
[0042] Optionally, the Micro LED microdisplay chip further includes:
[0043] A microlens array, comprising multiple microlens units, wherein the microlens units are disposed above at least one of the first LED unit, the second LED unit, and the third LED unit.
[0044] Optionally, the first light-emitting layer further includes a first passivation layer and a first electrode layer; the first passivation layer covers the first LED unit, and the first passivation layer has a first opening that exposes the second doped semiconductor layer of the first LED unit; the first electrode layer electrically connects the second doped semiconductor layer of the first LED unit to the first common contact through the first opening;
[0045] The second light-emitting layer further includes a second passivation layer and a second electrode layer. The second passivation layer covers the second LED unit and has a second opening that exposes a second doped semiconductor layer of the second LED unit. The second electrode layer electrically connects the second doped semiconductor layer of the second LED unit to the second common contact through the second opening.
[0046] The third light-emitting layer further includes a third passivation layer and a third electrode layer. The third passivation layer covers the third LED unit and has a third opening that exposes the second doped semiconductor layer of the third LED unit. The third electrode layer electrically connects the second doped semiconductor layer of the third LED unit to the third common contact through the three openings.
[0047] Optionally, the first light-emitting layer further includes a first protective layer, which covers the first passivation layer and the first electrode layer;
[0048] The second light-emitting layer further includes a second protective layer, which covers the second passivation layer and the second electrode layer;
[0049] The third light-emitting layer also includes a third protective layer, which covers the third passivation layer and the third electrode layer.
[0050] By employing the above technical solution, this application has at least the following beneficial effects:
[0051] The Micro LED microdisplay chip provided in the embodiments of this application emits light of different colors through different LED units, enabling full-color display. Simultaneously, different LED units are located on different layers and share the same driving contact, reducing contact resistance. This not only improves the integration of the structure but also reduces power consumption, further enhancing the stability of full-color light emission. Furthermore, the different LED units do not overlap spatially, significantly improving brightness. Additionally, the vias on the planarization layer can surround any LED unit on different layers, effectively preventing light leakage from the sidewalls of any LED unit, thereby greatly improving light extraction efficiency. Attached Figure Description
[0052] Figure 1 This is a top view of a Micro LED microdisplay chip according to an optional embodiment of this application;
[0053] Figure 2 This is a simplified diagram showing the distribution of the insulating structure in a Micro LED microdisplay chip according to an optional embodiment of this application;
[0054] Figure 3This is a top view of a full-color pixel unit according to an optional embodiment of this application;
[0055] Figure 4 for Figure 3 AA ， Schematic diagram of the cross section at the location;
[0056] Figure 5 for Figure 3 Zhong BB ， Schematic diagram of the cross section at the location;
[0057] Figure 6 for Figure 3 China CC ， A schematic diagram of the cross-section at the location.
[0058] The reference numerals in the attached figures are as follows:
[0059] 100. Driver panel; 101. Driver contact; 200. First light-emitting layer; 201. First LED unit; 202. First passivation layer; 203. First electrode layer; 204. First protective layer; 300. Second light-emitting layer; 301. Second LED unit; 302. Second passivation layer; 303. Second electrode layer; 304. Second protective layer; 400. Third light-emitting layer; 401. Third LED unit; 402. Third passivation layer; 403. Third electrode layer; 404. Third protective layer; 500. Insulating structure; 600. First planarization layer; 601. First through-hole; 700. Second planarization layer Layer; 701, Second via; 702, Fourth via; 800, Third planarization layer; 801, Third via; 802, Fifth via; 803, Sixth via; 900, First bonding layer; 901, First pixel driving region; 1000, Second bonding layer; 1001, Second pixel driving region; 1100, Third bonding layer; 1101, Third pixel driving region; 1200, Conductive pillar; 1300, Flattening layer; 1301, First flattening unit; 1302, Second flattening unit; 1303, Third flattening unit; 1400, Reflective layer; 1500, Microlens array; 1501, Microlens unit. Detailed Implementation
[0060] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0061] This application discloses numerous different embodiments or examples for implementing various structures. To simplify the disclosure, specific examples of components and arrangements are described herein. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. Additionally, this application provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.
[0062] Generally, terms can be understood at least in part according to their usage in the present application. For example, the term "one or more" as used in this application, at least in part according to the present application, can be used to describe any component, structure, or feature in the singular or in the plural form to describe a combination of components, structures, or features. Similarly, terms such as "a," "an," or "the" can also be understood, at least in part according to the present application, to convey either a singular or a plural usage. Furthermore, the term "based on..." can be understood not necessarily to convey an exclusive set of factors, but rather, at least in part according to the present application, may alternatively allow for the presence of additional factors that do not necessarily have to be explicitly described.
[0063] It should be readily understood that the meanings of “on,” “above,” and “on top of” in this application should be interpreted in the broadest sense, such that “on” means not only “directly on something,” but also “on something” including the presence of an intermediate component or layer between the two, and that “on something” or “above something” means not only “on something” or “above something,” but also “on something” or “above something” where no intermediate component or layer between the two exists.
[0064] Furthermore, for ease of description, spatial relative terms such as "below," "under," "lower," "above," and "upper" may be used in this application to describe the relationship of one element or component to another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways, rotated 90°, or otherwise oriented, and the spatial relative descriptive terms used in this application may be interpreted accordingly.
[0065] As used in this application, the term "layer" refers to a portion of material comprising a region of a certain thickness. A layer may extend over the entirety of an underlying or upper layer structure, or may have a extent smaller than that of the underlying or upper layer structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure, with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a tapered surface. A substrate may be a single layer, which may include one or more layers, and / or may have one or more layers on, above, and / or below it. A single layer may include multiple layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.
[0066] Micro LED displays offer numerous advantages, including self-illumination, high efficiency, low power consumption, high integration, and high stability. They are also small, highly flexible, and easy to disassemble and integrate, making them suitable for any existing display application, from small to large sizes. Micro LEDs, also known as micro-light-emitting diodes, typically have a size of several hundred micrometers. The emergence of Micro LED micro-display technology has made miniaturization and high resolution possible for display devices such as augmented reality (AR) displays, virtual reality (VR) displays, near-eye displays (NEDs), and head-up displays (HUDs). In these applications, the size of Micro LEDs is typically 0.1-10 micrometers.
[0067] In some embodiments, the term driving panel 100 as used herein refers to the material on which subsequent material layers are added. The driving panel 100 itself may be patterned. The material added to the top of the driving panel 100 may be patterned or may remain unpatterned. The driving panel 100 may be, for example, but not limited to, a display substrate including a silicon-based CMOS driving board or a thin-film transistor driving board, such as a CMOS (Complementary Metal-Oxide-Semiconductor) backplane or a TFT glass substrate.
[0068] This application describes a full-color Micro LED microdisplay chip. To manufacture the full-color Micro LED microdisplay chip, multiple sub-pixels with different emitting colors (e.g., red, green, and blue) are integrally formed into a single full-color pixel. Each sub-pixel micro-LED is individually driven by one or more driving circuits, emitting the primary color of its corresponding color code, and the full color gamut of the full-color pixel composed of multiple sub-pixels is visible to the human eye.
[0069] To integrally form multiple sub-pixel LEDs or micro-LEDs emitting different colors (e.g., the three primary colors) on the same driving panel 100, a stacked structure of light-emitting diode units is disclosed, wherein the light-emitting diode units include a substantially flat top surface to achieve the stacked structure. Each layer of this Micro LED microdisplay chip can independently emit a different color.
[0070] See Figures 1 to 6As shown, a Micro LED microdisplay chip is provided, including: a driving panel 100, which includes a first common contact, a second common contact, a third common contact, and a plurality of driving contacts 101; at least three light-emitting layers, each including a first light-emitting layer 200, a second light-emitting layer 300, and a third light-emitting layer 400; the first light-emitting layer 200 is disposed above the driving panel 100 and includes a plurality of first LED units 201 arranged in an array on the driving panel 100; the second doped semiconductor layer of the plurality of first LED units 201 is electrically connected to the first common contact to emit a first color light; and the second light-emitting layer 300 is disposed above the first light-emitting layer 200 and includes a plurality of first LED units 201 arranged in an array on the driving panel 100. A plurality of second LED units 301 are arranged in an array on the first light-emitting layer 200. The second doped semiconductor layers of the plurality of second LED units 301 are electrically connected to a second common contact to emit a second color of light. A third light-emitting layer 400 is disposed above the second light-emitting layer 300 and includes a plurality of third LED units 401 arranged in an array on the second light-emitting layer 300. The second doped semiconductor layers of the plurality of third LED units 401 are electrically connected to a third common contact to emit a third color of light. At least one first LED unit 201, at least one second LED unit 301, and at least one third LED unit 401 constitute a Micro LED unit. A full-color pixel unit of an LED microdisplay chip; on the driving panel 100, the orthographic projections of the first LED unit 201, the second LED unit 301, and the third LED unit 401 in a full-color pixel unit do not overlap; the first doped semiconductor layer of the first LED unit 201, the first doped semiconductor layer of the second LED unit 301, and the first doped semiconductor layer of the third LED unit 401 in a full-color pixel unit all share a driving contact 101 and are electrically connected to the driving contact 101; wherein, an insulating structure 500 is provided between two adjacent full-color pixel units, so that the driving panel 100 can drive multiple driving contacts 101 in a time-division manner, and cooperate with the first common contact, the second common contact, and the third common contact to drive the first LED unit 201, the second LED unit 301, and the third LED unit 401 in each full-color pixel unit in a time-division manner.
[0071] In this embodiment, full-color display can be achieved by emitting light of different colors through different LED units. Simultaneously, the different LED units are located on different layers and share the same driving contact 101, reducing contact resistance. This not only improves the integration of the structure but also reduces power consumption, further enhancing the stability of full-color light emission. Furthermore, the different LED units do not overlap in spatial position, resulting in a significant increase in luminous brightness.
[0072] The driver panel 100 is equipped with first, second, and third common contacts, as well as multiple driver contacts 101. These contacts form the basis for the electrical connections and signal transmission between different parts of the chip, providing hardware support for subsequent control of different light-emitting layers. It should be noted that one or more of the first, second, and third common contacts can be used. Using only one common contact simplifies the circuit design, reduces wiring complexity, and lowers chip manufacturing costs. This is an economical and practical choice for cost-sensitive applications with relatively simple functional requirements, such as small indicator screens. In this case, a single common contact can provide a unified driving signal to the corresponding light-emitting layer, ensuring synchronous operation of the LED units within that layer. Using multiple common contacts can meet more complex control requirements. In applications with extremely high display quality requirements, such as high-resolution displays or devices requiring dynamic display effects, multiple common contacts can enable zoned control of the light-emitting layers. For example, the first light-emitting layer 200 can be divided into multiple regions, each region connected to an independent first common contact. This allows for brightness adjustment, flicker control, and other operations on the first LED units 201 in different regions according to actual display needs, thereby achieving richer and more diverse display effects and greatly improving the performance and application range of the chip.
[0073] The first light-emitting layer 200, the second light-emitting layer 300, and the third light-emitting layer 400 are stacked. The first light-emitting layer 200, located above the driving panel 100, includes multiple first LED units 201 arranged in an array. The second doped semiconductor layers of the multiple first LED units 201 are electrically connected to a first common contact, emitting a first color of light, such as red light. The second light-emitting layer 300, located above the first light-emitting layer 200, includes multiple second LED units 301 arranged in an array. The second doped semiconductor layers of the multiple second LED units 301 are electrically connected to a second common contact, emitting a second color of light, such as green light. The third light-emitting layer 400, located above the second light-emitting layer 300, consists of multiple third LED units 401 arranged in an array. The second doped semiconductor layers of the multiple third LED units 401 are electrically connected to a third common contact, emitting a third color of light, such as blue light. It is understandable that the combination of different colors of light is the basis for achieving full-color display. In this embodiment, the colors of the light emitted by the first LED unit 201, the second LED unit 301, and the third LED unit 401 are all different. The first LED unit 201, the second LED unit 301, and the third LED unit 401 achieve full-color display, and all three share the same driving contact 101. The light emitted by the three units does not overlap on the driving panel 100, resulting in high integration of the LED units and achieving a high-resolution and high-brightness display effect. Furthermore, the first LED unit 201 can emit a first color of light, including but not limited to any one of red, green, blue, yellow, or ultraviolet light; the second LED unit 301 can emit a second color of light, including but not limited to any one of red, green, blue, yellow, or ultraviolet light; and the third LED unit 401 can emit a third color of light, including but not limited to any one of red, green, blue, yellow, or ultraviolet light. In other words, the first color light, the second color light, and the third color light are selected from red light, green light, and blue light, respectively, and the first color light, the second color light, and the third color light must be different.
[0074] Furthermore, in some specific examples, the first LED unit 201, the second LED unit 301, and the third LED unit 401 can be trapezoidal in structure. That is, the sidewalls of the first LED unit 201, the second LED unit 301, and the third LED unit 401 can be inclined planes, and the angle between the sidewalls and the top surface can be obtuse, thereby improving the light-gathering effect of the LED unit. In other specific examples, the first LED unit 201, the second LED unit 301, and the third LED unit 401 can also be columnar in structure, in which case the angle between the sidewalls and the top surface of the LED platform is a right angle.
[0075] Specifically, in the embodiments of this application, the first LED unit 201, the second LED unit 301, and the third LED unit 401 have a stepped structure. The stepped structure includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer located between them. It is understood that the stepped structure can prevent current interference between adjacent LED units, thereby improving the independence and stability of the LED units.
[0076] Furthermore, the first doped semiconductor layer can be p-type GaN. In some specific examples, the first doped semiconductor layer can be p-type InGaN; in other specific examples, the first doped semiconductor layer can also be p-type AlInGaP.
[0077] Furthermore, the second doped semiconductor layer can be n-type GaN. In some specific examples, the second doped semiconductor layer can be n-type InGaN; in other specific examples, the second doped semiconductor layer can also be n-type AlInGaP.
[0078] Furthermore, the active layer is the active region of the LED unit. The active layer is arranged between the first doped semiconductor layer and the second doped semiconductor layer and provides light. The active layer is a layer that recombines holes and electrons provided from the first doped semiconductor layer and the second doped semiconductor layer respectively and outputs light of a specific wavelength, and the active layer may have a single quantum well structure or a multiple quantum well (MQW) structure and alternating layers of well layers and barrier layers.
[0079] In this unit, at least one first LED unit 201, at least one second LED unit 301, and at least one third LED unit 401 constitute a full-color pixel unit. It is understood that the full-color pixel unit is the basic unit for achieving full-color display. Furthermore, on the driving panel 100, the orthographic projections of the LED units in a full-color pixel unit do not overlap, ensuring that the light emitted by each LED unit does not interfere with each other spatially, allowing for more effective superposition and thus improving brightness. Furthermore, the first doped semiconductor layer of each LED unit in a full-color pixel unit shares a driving contact 101 and is electrically connected to it, thereby reducing contact resistance and helping to reduce power consumption and improve structural integration. Furthermore, an insulating structure 500 is provided between two adjacent full-color pixel units to prevent current interference between adjacent pixel units, ensuring that the driving panel 100 can independently and accurately control each full-color pixel unit.
[0080] Specifically, in practical applications, the driving panel 100 drives multiple driving contacts 101 in a time-division manner, and in conjunction with three common contacts, can individually drive the first, second, and third LED units 401 in each full-color pixel unit. For example, at one moment, the driving circuit applies voltage to a specific driving contact 101 and the first common contact, causing the corresponding first LED unit 201 to light up; at another moment, voltage is applied to the same driving contact 101 and the second common contact, causing the corresponding second LED unit 301 to light up, and so on. By rapidly switching between driving different LED units, and utilizing the persistence of vision effect of the human eye, a full-color image is ultimately synthesized in the human eye.
[0081] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 2 , Figure 4 , Figure 5 and Figure 6 As shown, the MicroLED microdisplay chip further includes: a first planarization layer 600, located between the first light-emitting layer 200 and the second light-emitting layer 300, which transmits a first color light; a second planarization layer 700, located between the second light-emitting layer 300 and the third light-emitting layer 400, which transmits both the first and second color light; a plurality of third LED units 401 arranged on the second planarization layer 700; and a third planarization layer 800, disposed on the third light-emitting layer 400, which transmits the first color light, the second color light, and the third color light.
[0082] In this embodiment, the first planarization layer 600 is located between the first light-emitting layer 200 and the second light-emitting layer 300 and is transparent to the first color light. On the one hand, it ensures that the light emitted by the first LED unit 201 can pass through smoothly, reducing light loss and scattering during transmission, allowing the first color light to better participate in the light synthesis of the full-color display, which helps to improve the color accuracy and brightness uniformity of the full-color display. On the other hand, it plays a planarization role, allowing the second light-emitting layer 300 to be placed more evenly and stably on the first light-emitting layer 200. The second planarization layer 700 is located between the second light-emitting layer 300 and the third light-emitting layer 400 and is transparent to both the first and second color light. On the one hand, it ensures the integrity and accuracy of the different colors of light during the upward transmission process, allowing the three colors of light to be mixed more accurately when finally synthesizing the full-color image, improving the image quality and color performance of the full-color display. On the other hand, similar to the first planarization layer 600, it provides a flat placement base for the multiple third LED units 401 in the third light-emitting layer 400. The third planarization layer 800 is located on the third light-emitting layer 400 and can transmit the first, second, and third color light. On the one hand, it provides a unified and unobstructed light emission channel for all colors of light, ensuring that the light emitted from each layer can be optimally mixed and presented when it finally reaches the display surface, minimizing light loss and interference, thereby improving the brightness, contrast, and color saturation of the display and enhancing the overall display effect. On the other hand, it protects and encapsulates the entire multi-layer light-emitting structure, preventing external environmental factors such as dust and moisture from eroding and damaging the internal light-emitting layers, and improving the lifespan and reliability of the Micro LED microdisplay chip.
[0083] The first planarization layer 600, the second planarization layer 700, and the third planarization layer 800 can be made of transparent materials to allow the first color light, the second color light, and the third color light to pass through.
[0084] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 2 , Figure 4 , Figure 5 and Figure 6As shown, the MicroLED microdisplay chip further includes: a first bonding layer 900, located between the driving panel 100 and the first LED unit 201, the first bonding layer 900 being divided into multiple independent and electrically isolated first pixel driving regions 901 by the insulating structure 500 between adjacent full-color pixel units, the multiple first pixel driving regions 901 corresponding one-to-one with multiple first LED units 201; and a second bonding layer 1000, located between the first planarization layer 600 and the second LED unit 301, the second bonding layer 900 being divided into multiple independent and electrically isolated first pixel driving regions 901 by the insulating structure 500 between adjacent full-color pixel units 201; and a second bonding layer 1000, located between the first planarization layer 600 and the second LED unit 301, the second bonding layer 900 being divided into multiple independent and electrically isolated first pixel driving regions 901 by the insulating structure 500 between adjacent full-color pixel units 201. Under the action of the insulating structure 500 between pixel units, the pixels are divided into multiple independent and electrically isolated second pixel driving regions 1001, and the multiple second pixel driving regions 1001 correspond one-to-one with multiple second LED units 301; the third bonding layer 1100 is located between the second planarization layer 700 and the third LED unit 401. Under the action of the insulating structure 500 between two adjacent full-color pixel units, the third bonding layer 1100 is divided into multiple independent and electrically isolated third pixel driving regions 1101, and the multiple third pixel driving regions 1101 correspond one-to-one with multiple third LED units 401.
[0085] In this embodiment, under the action of the insulating structure 500 between two adjacent full-color pixel units, the first bonding layer 900 is divided into multiple independent and electrically isolated first pixel driving regions 901, corresponding one-to-one with multiple first LED units 201. Similarly, the second bonding layer 1000 and the third bonding layer 1100 also form independent and electrically isolated second pixel driving regions 1001 and third pixel driving regions 1101, respectively, corresponding one-to-one with the corresponding LED units. This allows each pixel unit (including the first, second, and third LED units 401) to be driven independently, ensuring that the driving panel 100 can accurately control each pixel unit individually, thereby achieving a more delicate and accurate full-color display effect. At the same time, the independent pixel driving regions formed by the bonding layers are electrically isolated from each other, which also avoids current crosstalk between different pixel driving regions, greatly improving the stability and reliability of the entire chip circuit, reducing display abnormalities caused by current interference, and ensuring the stable and efficient operation of the Micro LED microdisplay chip.
[0086] The insulating structure 500 can be a physical structure constructed using insulating materials (such as silicon dioxide, silicon nitride, etc.). These materials have high resistance characteristics and can prevent current from flowing in unwanted paths. Specifically, in the Micro LED microdisplay chip provided in this application embodiment, the insulating structure 500 is disposed between adjacent full-color pixel units, isolating different pixel driving areas and LED units, so that each pixel can be driven and controlled independently, thereby achieving accurate image display.
[0087] Specifically, the insulating structure 500 can be grown on the chip surface using processes such as chemical vapor deposition (CVD). For example, when fabricating a Micro LED microdisplay chip, plasma-enhanced chemical vapor deposition (PECVD) technology can be used to deposit a silicon dioxide insulating dielectric layer on a substrate such as a driving panel 100, and then patterned using processes such as photolithography and etching to form an insulating structure 500 between adjacent full-color pixel units.
[0088] The first bonding layer 900 is located between the driving panel 100 and the first LED unit 201. Due to the insulating structure 500 between adjacent full-color pixel units, the first bonding layer 900 is divided into multiple first pixel driving regions 901. These first pixel driving regions 901 are independent and electrically isolated from each other. This design aims to enable independent control and driving of each first LED unit 201, avoiding signal interference between different pixels and ensuring that each first LED unit 201 can accurately display the corresponding color and brightness according to the driving signal.
[0089] Specifically, each of the multiple first pixel driving areas 901 corresponds one-to-one with a multiple first LED unit 201, meaning that each first LED unit 201 has its own dedicated first pixel driving area 901 to provide driving signals, enabling it to work precisely and together constitute a part of a complete display pixel (possibly a red pixel part, etc.).
[0090] The second bonding layer 1000 is located between the first planarization layer 600 and the second LED unit 301. Similarly, due to the insulating structure 500 between adjacent full-color pixel units, the second bonding layer 1000 is divided into multiple second pixel driving regions 1001, and these regions are independent and electrically isolated from each other. This is to enable individual control of the second LED unit 301, ensuring that it can work collaboratively with other pixel units during display without being affected by adjacent pixel signals.
[0091] Specifically, each of the multiple second pixel driving areas 1001 corresponds one-to-one with a multiple second LED unit 301. Each second LED unit 301 has a corresponding second pixel driving area 1001, which is responsible for providing accurate driving signals to realize its function in full-color display, such as the green pixel part.
[0092] The third bonding layer 1100 is located between the second planarization layer 700 and the third LED unit 401. Based on the insulating structure 500 between adjacent full-color pixel units, the third bonding layer 1100 is divided into multiple independent and electrically isolated third pixel driving regions 1101. This structural design allows the third LED unit 401 to independently receive driving signals, thereby accurately presenting the required color and brightness when displaying images without interfering with other pixel units.
[0093] Specifically, multiple third pixel driving areas 1101 correspond one-to-one with multiple third LED units 401. Each third LED unit 401 has its own dedicated third pixel driving area 1101 to drive it, which may represent the blue pixel part, etc., and works together with the first and second LED units 301 to achieve full-color display.
[0094] Furthermore, the first bonding layer 900, the second bonding layer 1000, and the third bonding layer 1100 are adhesive material layers, and also need to be electrically connected to the first doped semiconductor layer to provide electrical conductivity. In some specific examples, the first bonding layer 900, the second bonding layer 1000, and the third bonding layer 1100 can be, for example, a metal or a metal alloy. In other specific examples, the first bonding layer 900, the second bonding layer 1000, and the third bonding layer 1100 can include Au, Ag, Cu, Al, etc., and are not limited thereto. It is understood that the description of the materials of the bonding layers herein is merely exemplary and not restrictive, and those skilled in the art can make changes as required, all of which are within the scope of this application.
[0095] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 2 , Figure 4 , Figure 5 and Figure 6 As shown, the MicroLED microdisplay chip also includes: a plurality of conductive pillars 1200, which are disposed on and connected to the corresponding driving contacts 101; and the conductive pillars 1200 are connected to the corresponding first pixel driving region 901 in the first bonding layer 900, the corresponding second pixel driving region 1001 in the second bonding layer 1000, and the corresponding third pixel driving region 1101 in the third bonding layer 1100.
[0096] In this embodiment, the conductive post 1200 connects the driving contact 101 to the corresponding pixel driving areas in the first, second, and third bonding layers 1100, providing a stable and reliable transmission path for the driving signal. Specifically, the driving contact 101 receives the driving signal from the driving panel 100 and accurately transmits the signal to the pixel driving area of each bonding layer through the conductive post 1200, thereby driving the corresponding LED unit to emit light. This direct connection method reduces interference and loss during signal transmission, ensuring that each LED unit receives a suitable driving signal, thus emitting light stably and improving the display stability of the entire display chip.
[0097] Multiple conductive posts 1200 are disposed on corresponding drive contacts 101. In this embodiment, the drive panel 100 of the MicroLED microdisplay chip has multiple drive contacts 101, and each conductive post 1200 is precisely configured to correspond to one drive contact 101. Simultaneously, the conductive post 1200 is connected to the corresponding drive contact 101, providing a path for current and drive signals to be transmitted from the drive contact 101 to the subsequent bonding layer and LED unit. The drive contact 101 receives drive signals and current from the drive panel 100, and the conductive post 1200 acts as a bridge to transmit them, making it a crucial link in the entire chip circuit connection. Furthermore, the conductive post 1200 is made of a metallic material.
[0098] Specifically, the first bonding layer 900 is located between the driving panel 100 and the first LED unit 201, and is divided into multiple independent and electrically isolated first pixel driving regions 901, each corresponding to a first LED unit 201. The conductive post 1200 is connected to the corresponding first pixel driving region 901 in the first bonding layer 900, and transmits the driving signal and current from the driving contact 101 to the first pixel driving region 901, thereby driving the corresponding first LED unit 201 to emit light, for example, driving the first LED unit 201 that emits red light. The second bonding layer 1000 is located between the first planarization layer 600 and the second LED unit 301, and is also divided into multiple independent and electrically isolated second pixel driving regions 1001, each corresponding to a second LED unit 301. The conductive post 1200 is also connected to the corresponding second pixel driving region 1001 in the second bonding layer 1000, so that driving signals and current can reach the second pixel driving region 1001 to drive the corresponding second LED unit 301 to emit light, for example, it may drive the second LED unit 301 that emits green light. The third bonding layer 1100 is divided into multiple independent and electrically isolated third pixel driving regions 1101 between the second planarization layer 700 and the third LED unit 401, and each third pixel driving region 1101 corresponds to a third LED unit 401. The conductive post 1200 is also connected to the corresponding third pixel driving region 1101 in the third bonding layer 1100 to provide driving signals and current to the corresponding third LED unit 401 to make it emit light, for example, it may drive the third LED unit 401 that emits blue light.
[0099] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 4 , Figure 5 and Figure 6 As shown, the second bonding layer 1000 has a first opening at the position corresponding to the first LED unit 201; the third bonding layer 1100 has a second opening at the position corresponding to the first LED unit 201; the third bonding layer 1100 has a third opening at the position corresponding to the second LED unit 301; the conductive post 1200 penetrates the corresponding first opening, second opening and third opening.
[0100] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 4 , Figure 5 and Figure 6As shown, the first planarization layer 600 has a plurality of first through holes 601, which are respectively arranged around a plurality of first LED units 201, and first colored light is emitted through the first through holes 601; the second planarization layer 700 has a plurality of second through holes 701, which are respectively arranged around a plurality of second LED units 301, and second colored light is emitted through the second through holes 701; the third planarization layer 800 has a plurality of third through holes 801, which are respectively arranged around a plurality of third LED units 401, and third colored light is emitted through the third through holes 801; the second planarization layer 700 also has a plurality of fourth through holes 702, which are arranged in a manner similar to... The third planarization layer 800 is provided with multiple first through holes 601; it also has multiple fifth through holes 802, which are provided relative to multiple fourth through holes 702; the first through holes 601 are sequentially connected to the corresponding fourth through holes 702 and the corresponding fifth through holes 802, and form a first recessed region between them and the first LED unit 201; the third planarization layer 800 is also provided with multiple sixth through holes 803, which are provided relative to multiple second through holes 701; the sixth through holes 803 are connected to the second through holes 701, and form a second recessed region between them and the second LED unit 301; a third recessed region is formed between the third through hole 801 and the third LED unit 401.
[0101] In this embodiment, each bonding layer has openings corresponding to different LED unit positions, and each planarization layer has through holes, providing dedicated channels for the emission of different colors of light. Taking the first color light emitted by the first LED unit 201 as an example, the first through hole 601 of the first planarization layer 600, the fourth through hole 702 of the second planarization layer 700, and the fifth through hole 802 of the third planarization layer 800 are sequentially connected to form a first recessed area, allowing the first color light to be emitted more directly, avoiding absorption or scattering of light when passing through other structures, improving light emission efficiency, and enhancing luminous brightness. Similarly, the second and third color light are emitted through the second through hole 701 and the third through hole 801, respectively, which also reduces light loss, ensures the intensity of each color light, and makes the colors of the full-color display more vivid and bright. At the same time, each color light is emitted through independent through holes, and the emission channels of different colors of light are relatively independent yet cooperate with each other, allowing the three colors of light to be mixed more orderly in space. In full-color displays, accurate light mixing is crucial for delivering rich, realistic colors. This structural design helps improve the accuracy and uniformity of light mixing, thereby enhancing the color reproduction and image quality of full-color displays.
[0102] The first recessed area is a continuous and through area formed by the first through hole 601, the fourth through hole 702 and the fifth through hole 802 facing each other. It can be columnar, bowl-shaped or trumpet-shaped. In order to improve the uniformity of light emission of the first LED unit 201, the first LED unit 201 can be set at the center of the first recessed area, so that the first color light can pass through the first through hole 601, the fourth through hole 702 and the fifth through hole 802 evenly.
[0103] The second recessed area is a continuous and through area formed by the sixth through hole 803 and the second through hole 701 connected and facing each other. It can be columnar, bowl-shaped or trumpet-shaped. In order to improve the uniformity of light emission of the second LED unit 301, the second LED unit 301 can also be set at the center of the second recessed area, so that the second color light can pass through the second through hole 701 and the sixth through hole 803 evenly.
[0104] Similarly, the third recessed area is the area formed by the opening of the third through hole 801. It can be columnar, bowl-shaped, or trumpet-shaped. In order to improve the uniformity of light emission of the third LED unit 401, the third LED unit 401 can be set at the center of the third recessed area, so that the third color light can pass through the third through hole 801 evenly.
[0105] Specifically, the diameters of the first through-hole 601, the fourth through-hole 702, and the fifth through-hole 802 are smaller than the diameter of at least one of the first and second openings; the diameters of the second through-hole 701 and the sixth through-hole 803 are smaller than the diameter of the third opening. It is understood that the aperture size is determined by the shape of the formed hole. Generally, the shapes of the first through-hole 601, the fourth through-hole 702, the fifth through-hole 802, the second through-hole 701, the sixth through-hole 803, and the first, second, and third openings are circular, meaning the aperture diameter is the inner diameter of the circular hole. Of course, the shape of the hole is not limited to the above shapes; it can also be a triangle, a square, a regular pentagon, a regular hexagon, or other regular polygons. The aperture size can be determined according to a unified standard for each shape. For example, the aperture diameter of a square can be the distance from the center to the side, where the center refers to the center of the incircle or circumcircle of the regular polygon. By setting the above aperture size relationship, short circuits between the reflective layer 1400 and the bonding layer can be avoided due to excessively large through-hole diameters.
[0106] Specifically, the vias described above can be formed using dry etching. For example, the sidewalls of the vias can be etched into vertical surfaces, and the angle between the sidewalls of the vias and the top surface of the planarization layer is a right angle. The via structure can also be a bowl-shaped or trumpet-shaped structure, thereby enabling collimation of the emitted light from the LED. This application does not specifically limit the material of the planarization layer with multiple vias. The materials of the first planarization layer 600, the second planarization layer 700, and the third planarization layer 800 may include, for example, organic resin, organic black matrix photoresist, color filter photoresist, and polyimide.
[0107] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 4 , Figure 5 and Figure 6 As shown, the Micro LED microdisplay chip also includes a leveling layer 1300, which includes a first leveling unit 1301, a second leveling unit 1302, and a third leveling unit 1303. The first leveling unit 1301 fills the first recessed area, the second leveling unit 1302 fills the second recessed area, and the third leveling unit 1303 fills the third recessed area.
[0108] In this embodiment, the filler layer 1300 can protect the first LED unit 201, the second LED unit 301 and the third LED unit 401, and can also effectively utilize the light emitting surface and the side light of the LED unit to improve the light emission efficiency.
[0109] The filler layer 1300 is made of transparent material so that the light emitted by the corresponding LED unit is not blocked.
[0110] Specifically, the first leveling unit 1301 can completely cover the first LED unit 201, the second leveling unit 1302 can completely cover the second LED unit 301, and the third leveling unit 1303 can completely cover the third LED unit 401.
[0111] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 4 , Figure 5 and Figure 6 As shown, the Micro LED microdisplay chip further includes: a reflective layer 1400, which is disposed on the sidewall of any one of the first recessed region, the second recessed region, and the third recessed region; or the reflective layer 1400 is disposed on the sidewall of at least one of the first through hole 601, the second through hole 701, the third through hole 801, the fourth through hole 702, the fifth through hole 802, and the sixth through hole 803.
[0112] In this embodiment, the reflective layer 1400 can not only effectively block light leakage from the sidewall of the LED unit, but also reflect the light emitted by the LED unit. Furthermore, the grid holes with the reflective layer 1400 can gather and collimate the reflected light from the reflective layer 1400 and the light emitted by the LED unit, further improving the light output efficiency.
[0113] In practical applications, the first, second, and third recessed areas can be used as a basis to form the reflective layer 1400. This avoids processing in the tiny gaps between the LED units of the Micro LED microdisplay chip, thereby significantly reducing the processing difficulty, widening the process window, and improving the processing yield. It can be applied to products with high resolution and high pixel density.
[0114] Specifically, in some examples, the reflective layer 1400 can be made of organic materials, including but not limited to highly reflective organic coatings. In other examples, the reflective layer 1400 can also be made of inorganic materials, including but not limited to metallic materials such as Al, Cu, and Ag. The reflective layer 1400 can be deposited onto the sidewall of the corresponding region by methods such as atomic layer deposition (ALD), chemical vapor deposition (CVD), evaporation, and sputtering.
[0115] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 4 , Figure 5 and Figure 6 As shown, the Micro LED microdisplay chip also includes a microlens array 1500, which includes a plurality of microlens units 1501, and the microlens units 1501 are disposed above at least one of the first LED unit 201, the second LED unit 301, and the third LED unit 401.
[0116] In this embodiment, the microlens unit 1501 can be used to focus and / or collimate the light emitted by the LED unit, thereby improving the luminous efficiency of the Micro LED microdisplay chip.
[0117] The light-emitting surface of the microlens unit 1501 can be an irregular curved surface or a regular curved surface. For example, the light-emitting surface can be an arc-shaped surface or a hemispherical surface.
[0118] Specifically, when the light-emitting surface of the microlens unit 1501 is an arc-shaped surface or a hemispherical surface, the ratio of the radius of curvature of the light-emitting surface of the microlens unit 1501 to the size of the LED unit is set to 0.5-3.
[0119] In some possible implementations disclosed in this application, see [link to relevant documentation]. Figure 4 , Figure 5 and Figure 6 As shown, the first light-emitting layer 200 further includes a first passivation layer 202 and a first electrode layer 203; the first passivation layer 202 covers the first LED unit 201, and the first passivation layer 202 has a first opening exposing the second doped semiconductor layer of the first LED unit 201; the first electrode layer 203 electrically connects the second doped semiconductor layer of the first LED unit 201 to a first common contact through the first opening; the second light-emitting layer 300 further includes a second passivation layer 302 and a second electrode layer 303, the second passivation layer 302 covers the second LED unit 301, and the second passivation layer 302 has a second opening exposing the second doped semiconductor layer of the second LED unit 301; the second electrode layer 303 electrically connects the second doped semiconductor layer of the second LED unit 301 to a second common contact through the second opening; the third The light-emitting layer 400 further includes a third passivation layer 402 and a third electrode layer 403. The third passivation layer 402 covers the third LED unit 401 and has a third opening that exposes the second doped semiconductor layer of the third LED unit 401. The third electrode layer 403 electrically connects the second doped semiconductor layer of the third LED unit 401 to a third common contact through the three openings. The first light-emitting layer 200 further includes a first protective layer 204 that covers the first passivation layer 202 and the first electrode layer 203. The second light-emitting layer 300 further includes a second protective layer 304 that covers the second passivation layer 302 and the second electrode layer 303. The third light-emitting layer 400 further includes a third protective layer 404 that covers the third passivation layer 402 and the third electrode layer 403.
[0120] In this embodiment, the passivation layer in each light-emitting layer has an opening, through which the electrode layer electrically connects the second doped semiconductor layer of the corresponding LED unit to the corresponding common contact. Taking the first light-emitting layer 200 as an example, the first opening of the first passivation layer 202 exposes the second doped semiconductor layer of the first LED unit 201, and the first electrode layer 203 connects to the first common contact through this opening. This precise connection method ensures that the driving current can be accurately transmitted to each LED unit, providing a stable circuit path for the normal light emission of the LED unit. At the same time, through the specific opening design, the electrode layer and the second doped semiconductor layer can be in close contact, effectively reducing the contact resistance between them. Lower contact resistance can reduce energy loss during power transmission, improve energy utilization efficiency, and enable the LED unit to achieve the same luminous brightness with lower power consumption, thereby reducing the power consumption of the entire chip.
[0121] The first passivation layer 202, the second passivation layer 302, and the third passivation layer 402 are made of inorganic or organic materials to isolate and protect the LED unit. The inorganic materials include any one or a combination of SiO2, Al2O3, ZrO2, TiO2, Si3N4, and HfO2. The organic materials include any one or a combination of black matrix photoresist, color filter photoresist, polyimide, BANK, overcoat, near-ultraviolet negative photoresist, and styrene.
[0122] In this design, the first electrode layer 203, the second electrode layer 303, and the third electrode layer 403 are N-polar metal layers, and the materials can be indium tin oxide (ITO), Cr, Ti, Pt, Au, Al, Cu, Ge, or Ni, etc. It should be noted that the first electrode layer 203, the second electrode layer 303, and the third electrode layer 403 can be continuous film structures or strip-shaped. When a continuous film structure is used, the electrode layers can provide a uniform current distribution, which helps to reduce resistance, improve conductivity, and allow electrons to move more smoothly within the electrode layers. For example, ITO, as a commonly used transparent conductive material, when made into a continuous film layer, not only ensures good conductivity but also has high transparency, making it suitable for application in Micro LED microdisplay chips where light transmittance is required. When the electrode layers are designed as strip structures, they can better adapt to the complex layout and circuit planning inside the chip. Strip structures can flexibly bypass other components to avoid mutual interference, and the width and spacing can be adjusted according to the current requirements of different areas. Taking the strip electrode layer made of Cr metal as an example, its high hardness and corrosion resistance enable it to work stably in complex chip environments. By rationally designing the direction and layout of the strip, more precise current control can be achieved for each LED unit.
[0123] Specifically, in practical applications, the first protective layer 204, the second protective layer 304, and the third protective layer 404 can cover multiple LED units to prevent etching damage to the light-emitting surface of the LED or at least one of the first electrode layers 203, 303, and 403. Simultaneously, to ensure that the first protective layer 204, second protective layer 304, and third protective layer 404 can transmit light emitted by the LED units, they should possess sufficient transparency, and are generally made of materials such as silicon dioxide, silicon nitride, and aluminum oxide. It should be noted that the first protective layer 204, second protective layer 304, and third protective layer 404 are all continuous film structures, located below the grid layer and above the LED units. The thickness of the first protective layer 204, second protective layer 304, and third protective layer 404 can be, for example, 300–800 nm; of course, the thickness can also be selected according to specific circumstances.
[0124] It should be noted that the Micro LED microdisplay chip obtained through the technical solutions of this application can be used to fabricate display devices. These display devices can be components or devices including the Micro LED microdisplay chip, such as Micro LED microdisplay chip devices including an encapsulation layer. Furthermore, the obtained Micro LED microdisplay chip can also be further used in electronic devices, including but not limited to: display devices such as augmented reality (AR) display devices, virtual reality (VR) display devices, near-eye display (NED) devices, and head-up display (HUD) devices.
[0125] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.
[0126] The present application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of the present application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A Micro LED microdisplay chip, characterized in that, include: The driver panel includes a first common contact, a second common contact, a third common contact, and multiple driver contacts; It has three light-emitting layers, including a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer; The first light-emitting layer is disposed above the driving panel and includes a plurality of first LED units arranged in an array that can emit light of a first color. The second doped semiconductor layer of the plurality of first LED units is electrically connected to the first common contact. The second light-emitting layer is disposed above the first light-emitting layer and includes a plurality of second LED units arranged in an array that can emit light of a second color. The second doped semiconductor layer of the plurality of second LED units is electrically connected to the second common contact. The third light-emitting layer is disposed above the second light-emitting layer and includes a plurality of third LED units arranged in an array that can emit a third color light. The second doped semiconductor layer of the plurality of third LED units is electrically connected to the third common contact. At least one first LED unit, at least one second LED unit, and at least one third LED unit constitute a full-color pixel unit; On the driving panel, the orthographic projections of the first LED unit, the second LED unit, and the third LED unit in a full-color pixel unit do not overlap; the first doped semiconductor layer of the first LED unit, the first doped semiconductor layer of the second LED unit, and the first doped semiconductor layer of the third LED unit in a full-color pixel unit are electrically connected to the same driving contact. An insulating structure is provided between two adjacent full-color pixel units; the first LED unit, the second LED unit, and the third LED unit in a full-color pixel unit are driven individually by the driving panel through time-division multiplexing.
2. The Micro LED microdisplay chip according to claim 1, characterized in that, Also includes: A first planarization layer is used to fill in the first light-emitting layer, and the first planarization layer is located between the first light-emitting layer and the second light-emitting layer; A second planarization layer is used to fill in the second light-emitting layer, and the second planarization layer is located between the second light-emitting layer and the third light-emitting layer; A third planarization layer is used to fill in the third light-emitting layer, and the third planarization layer is disposed on the third light-emitting layer.
3. The Micro LED microdisplay chip according to claim 2, characterized in that, Also includes: The first bonding layer is located between the driving panel and the first LED unit. Under the action of the insulating structure between two adjacent full-color pixel units, the first bonding layer is divided into a plurality of independent and electrically isolated first pixel driving areas, and the plurality of first pixel driving areas correspond one-to-one with the plurality of first LED units. The second bonding layer is located between the first planarization layer and the second LED unit. Under the action of the insulating structure between two adjacent full-color pixel units, the second bonding layer is divided into a plurality of independent and electrically isolated second pixel driving regions. The plurality of second pixel driving regions correspond one-to-one with the plurality of second LED units. The third bonding layer is located between the second planarization layer and the third LED unit. Under the action of the insulating structure between two adjacent full-color pixel units, the third bonding layer is divided into multiple independent and electrically isolated third pixel driving regions, and the multiple third pixel driving regions correspond one-to-one with the multiple third LED units.
4. The Micro LED microdisplay chip according to claim 3, characterized in that, Also includes: Multiple conductive posts are disposed on and connected to the corresponding driving contacts; Furthermore, the conductive pillar is connected to the first pixel driving region in the first bonding layer, the second pixel driving region in the second bonding layer, and the third pixel driving region in the third bonding layer.
5. The Micro LED microdisplay chip according to claim 4, characterized in that, The second bonding layer has a first opening at the position corresponding to the first LED unit; The third bonding layer has a second opening at the position corresponding to the first LED unit; The third bonding layer has a third opening at the position corresponding to the second LED unit; The conductive post penetrates the corresponding first opening, second opening, and third opening.
6. The Micro LED microdisplay chip according to claim 5, characterized in that, The first planarization layer has a plurality of first through holes, and the plurality of first through holes are respectively arranged around the plurality of first LED units; The second planarization layer has a plurality of second through holes, which are respectively arranged around a plurality of second LED units; The third planarization layer has a plurality of third through holes, and the plurality of third through holes are respectively arranged around the plurality of third LED units; The second planarization layer also has a plurality of fourth through holes, which are disposed relative to a plurality of first through holes; The third planarization layer also has a plurality of fifth through holes, which are disposed relative to the plurality of fourth through holes; The first through hole, the corresponding fourth through hole, and the corresponding fifth through hole are sequentially connected, and form a first recessed area between them and the first LED unit; The third planarization layer also has a plurality of sixth through holes, which are disposed relative to a plurality of second through holes; the sixth through holes communicate with the second through holes and form a second recessed region between them and the second LED unit; A third recessed area is formed between the third through hole and the third LED unit.
7. The Micro LED microdisplay chip according to claim 6, characterized in that, Also includes: A leveling layer, the leveling layer comprising a first leveling unit, a second leveling unit, and a third leveling unit; The first leveling unit fills the first recessed area, the second leveling unit fills the second recessed area, and the third leveling unit fills the third recessed area.
8. The Micro LED microdisplay chip according to claim 6, characterized in that, Also includes: A reflective layer is disposed on the sidewall of at least one of the first recessed region, the second recessed region, and the third recessed region; or The reflective layer is disposed on the sidewall of at least one of the first through hole, the second through hole, the third through hole, the fourth through hole, the fifth through hole, and the sixth through hole.
9. The Micro LED microdisplay chip according to claim 1, characterized in that, Also includes: A microlens array, comprising multiple microlens units, wherein the microlens units are disposed above at least one of the first LED unit, the second LED unit, and the third LED unit.
10. The Micro LED microdisplay chip according to claim 1, characterized in that, The first light-emitting layer further includes a first passivation layer and a first electrode layer; the first passivation layer covers the first LED unit, and the first passivation layer has a first opening that exposes a second doped semiconductor layer of the first LED unit; the first electrode layer electrically connects the second doped semiconductor layer of the first LED unit to the first common contact through the first opening; The second light-emitting layer further includes a second passivation layer and a second electrode layer. The second passivation layer covers the second LED unit and has a second opening that exposes a second doped semiconductor layer of the second LED unit. The second electrode layer electrically connects the second doped semiconductor layer of the second LED unit to the second common contact through the second opening; The third light-emitting layer further includes a third passivation layer and a third electrode layer. The third passivation layer covers the third LED unit and has a third opening that exposes the second doped semiconductor layer of the third LED unit. The third electrode layer electrically connects the second doped semiconductor layer of the third LED unit to the third common contact through the three openings.
11. The Micro LED microdisplay chip according to claim 10, characterized in that, The first light-emitting layer further includes a first protective layer, which covers the first passivation layer and the first electrode layer; The second light-emitting layer further includes a second protective layer, which covers the second passivation layer and the second electrode layer; The third light-emitting layer also includes a third protective layer, which covers the third passivation layer and the third electrode layer.