A heat dissipation substrate of a silicon controlled rectifier module and a silicon controlled rectifier module

Abstract

The utility model relates to the technical field of semiconductor power module discloses a silicon controlled module's heat dissipation base plate and silicon controlled module, wherein the upper surface of heat dissipation base plate is provided with a plurality of recess, recess sets up between the pressure joint of pole piece and the outgoing section and the connection department's just below between adjacent pressure joint, the area of recess is greater than or equal to the projection area of connection department on heat dissipation base plate. The heat dissipation base plate can increase the creepage distance between the connection department of pole piece and the upper surface of heat dissipation base plate, thereby avoiding the creep phenomenon between the connection department of pole piece and heat dissipation base plate. At the same time, since the distance between heat dissipation base plate and pole piece and semiconductor chip is not increased as a whole, the heat dissipation distance of semiconductor chip will not be increased, so the heat dissipation efficiency of silicon controlled module will not be affected. The recess can also increase the heat exchange area of heat dissipation base plate and silicon controlled module inside, improve the heat exchange efficiency of silicon controlled module.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor power module technology, specifically to a heat dissipation substrate for a thyristor module and a thyristor module. Background Technology

[0002] To ensure heat dissipation, thyristor modules typically mount the chip and electrodes onto a heat-dissipating substrate made of copper or copper alloy. For press-fit thyristor modules, the connection between the electrode's press-fit portion and the lead-out portion may be too close to the heat-dissipating substrate. In high-voltage scenarios, this can lead to creepage, affecting the safety of the thyristor module. Increasing the thickness of the insulating thermally conductive sheet between the electrode and the heat-dissipating substrate to increase the creepage distance between the connection portion and the upper surface of the substrate would increase the heat dissipation distance of the semiconductor chip, affecting the thyristor module's heat dissipation performance. Therefore, a new heat-dissipating substrate structure is needed to avoid creepage between the electrode connection portion and the heat-dissipating substrate while also preventing an impact on the chip's heat dissipation distance. Utility Model Content

[0003] In order to overcome the shortcomings of the prior art, the purpose of this utility model is to provide a heat dissipation substrate for a silicon controlled rectifier module, which can ensure the heat dissipation efficiency of the chip while avoiding creepage between the electrode connection part and the upper surface of the heat dissipation substrate.

[0004] To solve the above problems, the technical solution adopted by this utility model is as follows: a heat dissipation substrate for a thyristor module, wherein a plurality of grooves are provided on the upper surface of the heat dissipation substrate, the grooves are provided between the pressing part and the lead-out part of the electrode, and directly below the connecting part between adjacent pressing parts, and the area of ​​the grooves is greater than or equal to the projected area of ​​the connecting part on the heat dissipation substrate.

[0005] Compared to existing technologies, the advantages of this invention are as follows: By providing a groove directly below the connection between the electrode's pressing portion and the lead-out portion, the creepage distance between the connection portion and the surface of the heat dissipation substrate is increased, preventing creepage phenomena between the connection portion and the upper surface of the heat dissipation substrate under high-voltage conditions. Simultaneously, since no groove is provided directly below the non-connection portion, the heat dissipation distance between the chip and the heat dissipation substrate surface is not increased, thus not affecting the chip's heat dissipation efficiency. Furthermore, providing a groove on the upper surface of the heat dissipation substrate can increase the heat exchange area of ​​the upper surface of the heat dissipation substrate to a certain extent, thereby improving the heat dissipation efficiency of the thyristor module to a certain degree.

[0006] In the aforementioned heat dissipation substrate, all corners of the sidewalls of the groove are transitioned with rounded surfaces.

[0007] In the aforementioned heat dissipation substrate, the width of the groove on the side facing the corresponding pressing part gradually increases from the direction away from the pressing part to the direction closer to the pressing part.

[0008] The aforementioned heat dissipation substrate has multiple threaded holes.

[0009] A thyristor module includes a heat dissipation substrate for the aforementioned thyristor module.

[0010] The aforementioned thyristor module includes a common electrode, a first bent electrode, and a second bent electrode. The crimping portion of the first bent electrode is located above one of the crimping portions of the common electrode, and the crimping portion of the second bent electrode is located below the other crimping portion of the common electrode. A groove is provided on the upper surface of the heat dissipation substrate between the crimping portion and the lead-out portion of the common electrode, between two adjacent crimping portions of the common electrode, and directly below the connection portion between the lead-out portion and the crimping portion of the second bent electrode.

[0011] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Attached Figure Description

[0012] Figure 1 This is a three-dimensional structural diagram of the heat dissipation substrate according to an embodiment of the present invention.

[0013] Figure 2 This is a top view of the electrode and heat dissipation substrate in the thyristor module of this utility model embodiment.

[0014] Figure 3 This is a cross-sectional view of the electrode and heat dissipation substrate in the thyristor module of this utility model embodiment.

[0015] Figure 4 This is a longitudinal sectional view of the electrode and heat dissipation substrate in the thyristor module of this utility model embodiment.

[0016] Explanation of icon numbers:

[0017] 100 heat dissipation substrate, 110 groove, 120 threaded hole, 200 common electrode, 300 second bent electrode. Detailed Implementation

[0018] The embodiments of this utility model are described in detail below, with reference to Figures 1 to 4This invention provides a heat dissipation substrate 100. Multiple grooves 110 are provided on the upper surface of the substrate. The grooves 110 are located between the pressing portion and the lead-out portion of the electrode, or directly below the connection portion between adjacent pressing portions. The area of ​​the groove 110 is greater than or equal to the projected area of ​​the connection portion on the heat sink. By providing the grooves 110 directly below the connection portion, the heat dissipation substrate 100 increases the creepage distance between the connection portion and the upper surface of the heat dissipation substrate 100, thereby preventing creepage phenomena between the connection portion of the electrode and the upper surface of the heat dissipation substrate 100 under high voltage conditions, increasing the reliability and safety of the thyristor module. Since the grooves 110 are only located below the connection portion, they do not increase the overall distance between the upper surface of the heat dissipation substrate 100 and the semiconductor chip, thus avoiding increasing the heat dissipation distance of the semiconductor chip and not affecting the heat dissipation efficiency of the semiconductor chip. The groove 110 formed on the upper surface of the heat dissipation substrate 100 can increase the surface area of ​​the upper surface of the heat dissipation substrate 100, thereby increasing the heat exchange area between the heat dissipation substrate 100 and the thyristor module, increasing the heat exchange area of ​​the thyristor module, and improving the heat dissipation efficiency of the thyristor module.

[0019] Understandably, the depth of the groove 110 needs to be set according to the creepage distance under different voltage scenarios, ensuring that the distance between the bottom surface of the groove 110 and the lower surface of the connection part directly above it is greater than the required creepage distance.

[0020] In practice, since the electric field strength on the surface of a conductor is inversely proportional to the radius of curvature at that point, in some embodiments, reference is made to... Figure 1 To avoid charge accumulation at sharp points or corners with small radii of curvature, all corners of the sidewall of the groove 110 are rounded to prevent sharp corners from forming inside the groove 110 and further reduce the risk of creepage.

[0021] Reference Figure 1 and Figure 2 In some embodiments, since it is difficult to avoid the formation of small-radius-of-curvature edges at the junction of the electrode connection portion and the crimping portion, in order to further reduce the probability of creepage at the junction of the connection portion and the crimping portion, the width of the groove 110 facing the corresponding crimping portion gradually widens from the direction away from the crimping portion to the direction closer to the crimping portion, thereby ensuring that the connection edge between the connection portion and the crimping portion is at a sufficient distance from the upper surface of the heat dissipation substrate 100 to avoid creepage.

[0022] Reference Figure 1 and Figure 2 In this embodiment, the heat dissipation substrate 100 is provided with a plurality of threaded holes 120 for threaded connection with the housing of the thyristor module, and the heat dissipation substrate 100 is also provided with a plurality of optical holes for mounting and fixing the thyristor module.

[0023] Reference Figures 2 to 4 The thyristor module of this utility model embodiment includes the heat dissipation substrate 100 described above. The electrode of the thyristor module includes a common electrode 200, a first bent electrode (not shown in the figure), and a second bent electrode 300. The common electrode 200 includes a lead-out portion and two crimping portions connected in sequence. The first bent electrode and the second bent electrode 300 each include a lead-out portion and a crimping portion connected in sequence. The lead-out portion is used for electrical connection with an external device, and the crimping portion is used for crimping with a semiconductor chip to realize the electrical connection between the electrode and the semiconductor chip. The crimping portion of the first bent electrode is located above the left crimping portion of the common electrode 200, and the crimping portion of the second bent electrode 300 is located below the right crimping portion of the common electrode 200. Therefore, the distance between the connecting portion of the first bent electrode and the highest surface of the heat sink substrate 100 is already greater than the required creepage distance. It is not necessary to provide a groove below the connecting portion of the first bent electrode. Therefore, only grooves 110 need to be provided between the left crimping portion and the lead-out portion of the common electrode 200, between the two crimping portions of the common electrode 200, and directly below the connecting portion between the lead-out portion and the crimping portion of the second bent electrode 300 to increase the creepage distance. This avoids creepage between the electrode and the heat sink substrate 100. Figure 3 and Figure 4 As shown.

[0024] It should be noted that in the description of this utility model, any descriptions of orientation, such as up, down, front, back, left, right, etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed or operated in a specific orientation, and should not be construed as a limitation of this utility model.

[0025] In the description of this utility model, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. If "first" or "second" is mentioned, it is only for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0026] In the description of this utility model, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.

[0027] The above embodiments are merely preferred embodiments of this utility model and should not be construed as limiting the scope of protection of this utility model. Any non-substantial changes and substitutions made by those skilled in the art based on this utility model shall fall within the scope of protection claimed by this utility model.

Claims

1. A heat dissipation substrate for a silicon controlled rectifier (SCR) module, characterized in that, A plurality of grooves (110) are provided on the upper surface of the heat dissipation substrate (100). The grooves (110) are located between the pressing part and the lead-out part of the electrode sheet, and directly below the connecting part between adjacent pressing parts. The area of ​​the grooves (110) is greater than or equal to the projected area of ​​the connecting part on the heat dissipation substrate (100).

2. The heat dissipation substrate according to claim 1, characterized in that, All corners of the sidewall of the groove (110) are transitioned with rounded surfaces.

3. The heat dissipation substrate according to claim 1, characterized in that, The width of the groove (110) on the side facing the corresponding crimping part gradually increases from the direction away from the crimping part to the direction closer to the crimping part.

4. The heat dissipation substrate according to claim 1, characterized in that, The heat dissipation substrate (100) is provided with a plurality of threaded holes (120).

5. A thyristor module, characterized in that, Includes a heat dissipation substrate (100) for a thyristor module according to any one of claims 1 to 4.

6. The thyristor module according to claim 5, characterized in that, The electrode includes a common electrode (200), a first bent electrode, and a second bent electrode (300). The crimping portion of the first bent electrode is disposed above one of the crimping portions of the common electrode (200), and the crimping portion of the second bent electrode (300) is disposed below the other crimping portion of the common electrode (200). A groove (110) is provided on the upper surface of the heat dissipation substrate (100) between the crimping portion and the lead-out portion of the common electrode (200), between two adjacent crimping portions of the common electrode (200), and directly below the connection portion between the lead-out portion and the crimping portion of the second bent electrode (300).

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