A carrier bracket for a vapor phase silicon infiltration process

Abstract

The utility model discloses a kind of bearing support for gas phase silicon infiltration process, specifically relates to gas phase silicon infiltration process equipment field.The bearing support includes: first support component, second support component, locking mechanism and containing component;Second support component is detachably installed on first support component, the bottom surface of second support component is provided with the groove matched with pillar, and the positioning of second support component is realized by the sleeve joint cooperation with the groove and pillar;Locking mechanism is used to lock connection between second support component and first support component, prevent relative movement of both in gas phase silicon infiltration process process;Containing component has containing space for containing the combination of first support component and second support component.The bearing support for gas phase silicon infiltration process provided by the utility model can realize the technical effects of improving corrosion resistance, enhancing structural stability, improving operation convenience and maintenance economy and ensuring process uniformity.

Description

Technical Field

[0001] This utility model relates to the field of equipment for vapor phase silicon diffusion process, and specifically to a support bracket for the vapor phase silicon diffusion process. Background Technology

[0002] Vapor phase silicon infiltration is a key technology for preparing dense ceramic matrix composites by infiltrating silicon vapor into a porous preform under high temperature and vacuum conditions, resulting in a chemical reaction. This process is widely used in the fabrication of high-performance structural components in aerospace, semiconductor, and other fields. During the process, the workpiece must be stably placed on a support frame and subjected to prolonged processing at 1400℃-1800℃; therefore, the performance of the support frame directly affects product quality and production safety.

[0003] Existing support structures for vapor phase silicon infiltration processes generally suffer from the following technical defects: 1. Insufficient corrosion resistance: Existing supports are mostly made of graphite. In a high-temperature silicon vapor environment, graphite reacts with silicon vapor to form silicon carbide, leading to the consumption of the support structure, changes in structural dimensions, reduced strength, and short service life. The particulate impurities generated by corrosion also contaminate the reactor environment and the final product. 2. Poor connection reliability: Existing supports often use simple placement or socket connections between the support components and the base. Under complex conditions of high temperature, vacuum, and airflow impact, the support components are prone to axial displacement, rotation, or even overturning, leading to workpiece damage and production accidents. 3. Poor high-temperature structural stability: Existing supports are prone to warping, deformation, or cracking under high-temperature thermal stress. 4. Inconvenient maintenance: Existing supports have poor versatility; when a part is damaged, the entire structure must be replaced, resulting in high maintenance costs. 5. Uneven process gas flow: The support components of existing supports can hinder the free flow of silicon vapor, easily forming "dead zones" around the workpiece, leading to inconsistent silicon infiltration reaction levels and poor product performance consistency.

[0004] In summary, existing load-bearing supports suffer from problems such as poor corrosion resistance, unreliable connections, easy deformation at high temperatures, inconvenient maintenance, and uneven gas flow. There is an urgent need to develop a new type of load-bearing support that is corrosion-resistant, has reliable connections, stable structure, convenient maintenance, and uniform gas flow. Utility Model Content

[0005] In order to solve at least one of the technical problems of existing support brackets used in vapor phase silicon infiltration processes, such as poor corrosion resistance, structural instability at high temperatures, inconvenient loading and unloading, high maintenance costs, and impact on process uniformity, and to achieve at least one of the technical effects of improving corrosion resistance, enhancing structural stability, improving operational convenience and maintenance economy, and ensuring process uniformity, this utility model provides a support bracket for vapor phase silicon infiltration processes.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A support structure for a vapor phase silicon infiltration process, comprising:

[0008] A first support component, the first support component including a base and at least two pillars disposed on the base;

[0009] The second support component is detachably mounted on the first support component. The bottom surface of the second support component is provided with a groove that mates with the column. The second support component is positioned by fitting the groove with the column. The second support component is provided with a hole that extends through its thickness direction.

[0010] The locking mechanism includes a first locking engagement part disposed on the support column, a second locking engagement part disposed on the side wall of the groove, and a separable locking component. The locking component is used to engage with the first locking engagement part and the second locking engagement part to lock the second support component to the first support component, thereby preventing relative movement between the two during the vapor phase silicon diffusion process.

[0011] And a receiving component having a receiving space for receiving the first support component and the second support component assembly.

[0012] Optionally, the first locking engagement part is a first slot provided at the upper end of the support column, and the second locking engagement part is a second slot provided on the side wall of the groove. The first slot and the second slot are aligned with each other to form a through channel when the second support component is installed on the first support component. The locking component can be inserted into the channel to achieve axial locking through geometric limiting action.

[0013] Optionally, the first support component, the second support component, the locking component, and the receiving component are all made of graphite matrix, and their surfaces are all covered with a ceramic protective layer.

[0014] Optionally, the ceramic protective layer is a silicon carbide coating, a silicon nitride coating, or a zirconium boride coating.

[0015] Optionally, the base is a ring, square, or cross-shaped structure, and the pillars are evenly spaced on the base and are arranged perpendicular to the base.

[0016] Optionally, the second support member is a circular disc, rectangular plate, or polygonal plate with a predetermined thickness, and its dimensions match those of the first support member.

[0017] Optionally, the holes provided on the second support component can be a strip array, a grid structure, a star-shaped radial structure, a concentric circular array, or a honeycomb structure.

[0018] Optionally, the number of grooves is the same as the number of pillars to form a multi-point support structure.

[0019] Optionally, the locking component is a block-shaped, wedge-shaped, or pin-shaped structure.

[0020] Optionally, the receiving component is a hollow cylindrical or rectangular container with one end open, and its internal dimensions are larger than the maximum outer diameter of the combined first and second support components.

[0021] Optionally, the thickness of the ceramic protective layer is 30-100 μm, and it is prepared by chemical vapor deposition, physical vapor deposition or plasma spraying processes.

[0022] Optionally, the cross-sectional shape of the support column is rectangular, rounded-ended rectangular, circular, or elliptical; the cross-sectional shape of the groove is adapted to the cross-sectional shape of the support column.

[0023] Optionally, the first slot is located at a position 0.3-1.0 mm from the top of the support column, and the second slot is located at a depth of 0.3-1.0 mm from the opening of the groove on the side wall of the groove.

[0024] Optionally, multiple second support components are provided, and the multiple second support components are stacked in a vertical direction, with adjacent layers of second support components being spaced apart by spacer supports.

[0025] Optionally, the porosity of the pores is not less than 30%.

[0026] Compared with the prior art, the support bracket for vapor phase silicon diffusion process provided by this utility model has the following advantages:

[0027] 1. Significantly improved corrosion resistance: Each component of the bracket is made of graphite matrix and covered with silicon carbide coating, which can effectively resist the corrosion of high-temperature silicon vapor in the vapor phase silicon infiltration process, avoid the bracket from reacting with the workpiece, thereby ensuring product quality and extending the service life of the bracket.

[0028] 2. Significantly improved structural stability: The second support component is connected to the first support component by a combination of the groove in the second support component, the column of the first support component, the slot on the groove of the second support component, and the locking component, thereby forming a stable load-bearing structure. This prevents the support from loosening or collapsing due to vibration or thermal deformation during the process, ensuring the safety of workpiece processing.

[0029] 3. Significantly improved ease of operation and economical maintenance: The detachable modular design facilitates adjustment of the type of the second support component, loading and unloading of workpieces, and replacement of damaged individual parts, thereby reducing operational difficulty and maintenance costs.

[0030] 4. Ensured process uniformity: The perforated structure on the second support component ensures that silicon vapor can freely and uniformly penetrate the second support component, ensuring the uniformity and consistency of silicon infiltration process and improving product quality. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the overall assembly of the support bracket for the vapor phase silicon diffusion process of this utility model.

[0033] Figure 2 This is a schematic diagram of the structure of the first supporting component of this utility model;

[0034] Figure 3 This is a structural schematic diagram of the second support component of this utility model;

[0035] Figure 4 This is a structural schematic diagram of the locking component of this utility model;

[0036] Figure 5 This is a schematic diagram of the structure of the housing component of this utility model. Detailed Implementation

[0037] To make the objectives, technical solutions, and beneficial effects of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0038] like Figures 1 to 5 As shown, a support bracket for a vapor phase silicon diffusion process includes a first support component 1, a second support component 2, a locking mechanism, and a receiving component 4. Figure 1As shown, the first support member 1 includes a base 11 and at least two support columns 12 disposed on the base 11. The second support member 2 is detachably mounted on the first support member 1, and its bottom surface is provided with a groove 21 that mates with the support column 12. Radial positioning is achieved through the sleeve engagement of the groove 21 and the support column 12. The second support member 2 is provided with a hole 22 penetrating its thickness direction. The locking mechanism includes a first locking engagement part disposed on the support column 12, a second locking engagement part disposed on the side wall of the groove 21, and a separable locking member 3. The locking member 3 is used to engage with the first locking engagement part and the second locking engagement part to lock the second support member 2 to the first support member 1. Optionally, the locking member 3 can be a structure such as a latch, and its specific structure can be designed to achieve the locking function. The receiving member 4 has a receiving space for receiving the assembly of the first support member 1 and the second support member 2.

[0039] The base 11 of the first support component 1 has a ring, U-shaped, or cross-shaped structure. The pillars 12 are evenly spaced on the base 11, forming a multi-point support structure that evenly distributes the upper load, improving overall load-bearing capacity and stability. The second support component 2 achieves precise positioning through the sleeve engagement of the groove 21 with the pillar 12, preventing horizontal swaying. The pores 22 are used for process gas flow and can be in the form of through holes, grids, or meshes. Optionally, the porosity of the pores is not less than 30%. A locking mechanism prevents relative movement between the first support component 1 and the second support component 2 during the vapor phase silicon infiltration process. The housing component 4 provides an external housing environment for the support bracket and also provides space for process gas circulation and heat transfer.

[0040] like Figure 2 and Figure 3 As shown, the first locking engagement part is a first slot 13 located at the upper end of the support column 12, and the second locking engagement part is a second slot 23 located on the side wall of the groove 21. After the second support member 2 is fitted onto the support column 12 of the first support member 1 through its groove 21, the first slot 13 and the second slot 23 are precisely aligned, forming a through channel. The locking member 3 can be inserted into this channel, and axial locking is achieved through geometric limiting, effectively preventing the second support member 2 from separating from the first support member 1 due to vibration or accidental lifting during handling, installation, or process.

[0041] Optionally, the first support component 1, the second support component 2, the locking component 3, and the receiving component 4 are all made of a graphite matrix, and their surfaces are all covered with a dense ceramic protective layer. Figures 1 to 5As shown, all components are composed of a high-density graphite matrix. Graphite material possesses excellent mechanical strength and thermal shock resistance at high temperatures. The dense ceramic protective layer covering the surface acts as an effective physical and chemical barrier, preventing silicon vapor from chemically eroding and penetrating the graphite matrix during high-temperature vapor-phase silicon infiltration, thereby extending the service life of the support structure. Optionally, the thickness of the ceramic protective layer is 30-100 μm, and the ceramic protective layer can be prepared by chemical vapor deposition, physical vapor deposition, or plasma spraying processes.

[0042] In a specific embodiment, such as Figure 2 As shown, the base 11 of the first support component 1 is a ring structure, with six pillars 12 evenly spaced along the circumference of the base 11, forming a stable multi-point support. The cross-sectional shape of the pillars 12 can be rectangular, rounded-end rectangular, circular, or elliptical. The second support component 2 is a circular disc or rectangular plate with a predetermined thickness, and its dimensions match those of the first support component 1. For example, the second support component 2 is a circular disc, and its diameter matches the outer diameter of the first support component 1 to ensure coordination and stability after installation. Figure 3 As shown, the pores 22 on the second support component 2 are strip-shaped structures, consisting of strip-shaped through holes with a width of 5 mm and a spacing of 10 mm. The high porosity ensures that silicon vapor in the vapor-phase silicon infiltration process can freely and uniformly penetrate the second support component 2. It can be understood that the pores 22 can also be strip arrays, grid structures, or star-shaped radial structures, etc.

[0043] like Figure 3 As shown, the bottom surface of the second support component 2 is provided with six grooves 21, which correspond one-to-one with the six pillars 12 on the first support component 1, forming a six-point support structure. The cross-sectional shape of the grooves 21 is adapted to the pillars 12, and the number of grooves 21 is the same as the number of pillars 12, so as to form a multi-point support structure.

[0044] The locking component 3 can be a block-shaped, wedge-shaped, or pin-shaped structure, etc. In a specific embodiment, such as... Figure 4 As shown, the locking component 3 is a repeatedly insertable and removable pin structure. By inserting it into the aligned first slot 13 and second slot 23, the axial locking between the second support component 2 and the first support component 1 is achieved through geometric limiting.

[0045] The receiving component 4 is a hollow cylindrical or rectangular container open at one end. Optionally, such as... Figure 5 As shown, the receiving component 4 is a hollow cylindrical container with an internal dimension larger than the maximum outer diameter of the combined first support component 1 and second support component 2, in order to provide sufficient receiving space.

[0046] Optionally, the first slot 13 is located at a position 0.3-1.0 mm from the top of the support column 12, and the second slot 23 is located at a depth of 0.3-1.0 mm from the opening of the groove on the side wall of the groove 21.

[0047] Furthermore, multiple second support components 2 can be provided, and the multiple second support components 2 are stacked in the vertical direction. Adjacent layers of second support components 2 are supported by spacer supports (not shown in the figure). For example, the spacer supports can be structural components such as short pillars set on the lower layer of second support components 2.

[0048] In one specific embodiment, the first support component 1, the second support component 2, the locking component 3, and the receiving component 4 are all made of a high-density graphite matrix, and their surfaces are all covered with a dense silicon carbide protective layer with a thickness of 50 μm. The first support component 1 includes a base 11 and pillars 12 perpendicular to the base 11. The base 11 has an annular structure with an outer diameter of 430 mm, an inner diameter of 400 mm, and a thickness of 5 mm. There are six pillars 12, each with a height of 62 mm, evenly spaced along the circumference of the base 11. The second support component 2 is a circular disc with a diameter of 430 mm and a thickness of 5 mm. Its bottom surface has six rectangular grooves 21 with rounded ends corresponding to the pillars 12. The total length of the grooves 21 is 17 mm, the radius of the semicircles at both ends is 3.5 mm, the width is 7 mm, and the depth is 2 mm. The radius and length of the semicircles at both ends of the grooves 21 are 0.1 mm and 0.2 mm larger than the radius and length of the semicircles at both ends of the pillars 12, respectively. The second support component 2 has a hole 22 through its thickness direction for the flow of process gas. The hole 22 is a strip structure, consisting of strip-shaped through holes with a width of 5 mm and a hole spacing of 10 mm, with an opening ratio of about 35%.

[0049] A first slot 13, extending through the width of the support column 12, is formed 0.5 mm from its top. The first slot 13 has a rectangular cross-section, with a width of 5 mm and a height of 1 mm. On the side wall of the groove 21, at a depth of 0.5 mm from the groove opening, a pair of opposing second slots 23 are formed, with the same width and height as the first slots 13. When the second support member 2 is fitted onto the support column 12 of the first support member 1 through its groove 21, the first slot 13 and the second slots 23 are precisely aligned, forming a through rectangular channel.

[0050] The locking component 3 is a repeatedly insertable and removable pin-shaped structure, 20mm in length and with a cross-sectional dimension of 0.9mm × 4.9mm. By horizontally inserting the locking component 3 into the communicating channel formed by aligning the first slot 13 and the second slot 23, the upper surface of the locking component 3 abuts against the upper walls of the first slot 13 and the second slot 23, and the lower surface abuts against the lower walls of the first slot 13 and the second slot 23, achieving axial locking between the second support component 2 and the first support component 1 through geometric limiting. The length of the locking component 3 is 6mm greater than the channel depth; when the second support component 2 needs to be disassembled or replaced, the locking component 3 can be pulled out, making operation convenient.

[0051] The housing component 4 is a hollow cylindrical container with an inner diameter of 500 mm, a height of 115 mm, and a wall thickness of 15 mm. Its internal dimensions are larger than the maximum outer diameter of the combined first support component 1 and second support component 2, providing sufficient space for the full circulation of silicon vapor and uniform heat transfer.

[0052] The support bracket in this embodiment adopts a composite structure of graphite substrate and silicon carbide coating, which can effectively resist the corrosion of high-temperature silicon vapor in the vapor phase silicon infiltration process. The combination of groove 21, first slot 13, second slot 23 and locking component 3 forms a stable support structure, avoiding loosening or collapse due to vibration or thermal deformation during the process. The detachable modular design makes it easy to adjust the type of the second support component 2, load and unload workpieces and replace damaged individual parts, thereby reducing the difficulty of operation and maintenance costs. The high porosity pore structure 22 ensures that silicon vapor in the vapor phase silicon infiltration process can freely and uniformly penetrate the second support component 2, ensuring the uniformity and consistency of silicon infiltration treatment.

[0053] The embodiments described above are merely illustrative of the present utility model and are not intended to limit the scope of the present utility model. Any modifications and improvements made to the technical solutions of the present utility model by those skilled in the art without departing from the spirit of the present utility model should fall within the protection scope defined by the present utility model.

Claims

1. A support bracket for a vapor-phase silicon infiltration process, characterized in that, include: The first support component (1) includes a base (11) and at least two pillars (12) disposed on the base (11). The second support component (2) is detachably mounted on the first support component (1). The bottom surface of the second support component (2) is provided with a groove (21) that cooperates with the support column (12). The second support component (2) is positioned by the sleeve engagement of the groove (21) and the support column (12). The second support component (2) is provided with a hole (22) that penetrates its thickness direction. The locking mechanism includes a first locking engagement part disposed on the support column (12), a second locking engagement part disposed on the side wall of the groove (21), and a separable locking component (3). The locking component (3) is used to engage with the first locking engagement part and the second locking engagement part to lock the second support component (2) and the first support component (1) together, so as to prevent the two from moving relative to each other during the vapor phase silicon diffusion process. and a receiving component (4), the receiving component (4) having a receiving space for receiving the assembly of the first support component (1) and the second support component (2); The first support component (1), the second support component (2), the locking component (3) and the receiving component (4) are all made of graphite matrix and their surfaces are covered with a ceramic protective layer.

2. The support bracket for vapor phase silicon diffusion process according to claim 1, characterized in that, The first locking engagement part is a first slot (13) provided on the upper end of the support column (12), and the second locking engagement part is a second slot (23) provided on the side wall of the groove (21). The first slot (13) and the second slot (23) are aligned with each other to form a through channel when the second support member (2) is installed on the first support member (1). The locking member (3) can be inserted into the channel to achieve axial locking through geometric limiting action.

3. The support bracket for vapor phase silicon infiltration process according to claim 2, characterized in that, The ceramic protective layer is a silicon carbide coating, a silicon nitride coating, or a zirconium boride coating.

4. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The base (11) is a ring, square, or cross-shaped structure, and the support pillars (12) are evenly spaced on the base (11) and are arranged perpendicular to the base (11).

5. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The second support component (2) is a circular disc, rectangular plate or polygonal plate with a predetermined thickness, and its size matches that of the first support component (1).

6. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The holes (22) provided on the second support component (2) are strip arrays, grid structures, cross-shaped radial structures, concentric ring arrays or honeycomb structures.

7. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The number of grooves (21) is the same as the number of pillars (12) to form a multi-point support structure.

8. The support bracket for vapor phase silicon infiltration process according to claim 2 or 3, characterized in that, The locking component is a block-shaped, wedge-shaped, or pin-shaped structure.

9. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The receiving component (4) is a hollow cylindrical or rectangular container with one end open, and its internal dimensions are larger than the maximum outer diameter of the combined first support component (1) and second support component (2).

10. The support bracket for vapor phase silicon infiltration process according to claim 2 or 3, characterized in that, The ceramic protective layer has a thickness of 30-100 μm and is prepared by chemical vapor deposition, physical vapor deposition or plasma spraying processes.

11. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The cross-sectional shape of the support (12) is rectangular, rounded rectangular, circular or elliptical; the cross-sectional shape of the groove (21) is adapted to the cross-sectional shape of the support (12).

12. The support bracket for vapor phase silicon infiltration process according to claim 2 or 3, characterized in that, The first slot (13) is located at a position 0.3-1.0 mm from the top of the support column (12), and the second slot (23) is located at a depth of 0.3-1.0 mm from the opening of the groove on the side wall of the groove (21).

13. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The second support component (2) is provided in multiple layers, and the multiple second support components (2) are stacked in the vertical direction. The adjacent two layers of second support components (2) are supported by spacer support members.

14. The support bracket for vapor phase silicon diffusion process according to any one of claims 1-3, characterized in that, The porosity of the pores (22) is not less than 30%.

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