An ultrathin alloy resistor

Abstract

The utility model discloses an ultrathin alloy resistance, including alloy and electrode on alloy, have circuit area and electrode area on alloy, electrode is located on electrode area, the width of circuit area is same with the interval between electrode.

Description

Technical Field

[0001] This utility model belongs to the field of alloy resistor technology, specifically relating to an ultra-thin alloy resistor with an overall thickness of 0.10 to 0.15 mm. Background Technology

[0002] In the existing technology, alloy resistors are generally made by pressing alloy sheets with a substrate, etching them to obtain a resistor body semi-finished product with a certain resistance value, and then obtaining individual products through solder resisting, copper electroplating, cutting and granulation, and barrel plating.

[0003] Because existing technologies require a substrate as a carrier and solderability protection, the electrodes are thick, and the overall thickness of the alloy resistor is also relatively thick, making it impossible to achieve an ultra-thin effect.

[0004] The above background information is provided only to assist in understanding the utility model concept and technical solution of this utility model. It does not necessarily belong to the prior art of this utility model. In the absence of clear evidence that the above information was disclosed before the application date of this utility model, the above background information should not be used to evaluate the novelty and inventiveness of this utility model. Utility Model Content

[0005] In view of this, in order to overcome the shortcomings of the prior art, the purpose of this utility model is to provide an ultra-thin alloy resistor.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] An ultrathin alloy resistor includes an alloy and electrodes located on the alloy; the alloy has a circuit region and an electrode region, the electrodes are located on the electrode region, and the width of the circuit region is the same as the spacing between the electrodes.

[0008] According to some preferred embodiments of the present invention, the circuit region is rectangular and located between the electrode regions.

[0009] According to some preferred embodiments of the present invention, the electrode includes a nickel layer, and / or a palladium layer, and / or a gold layer.

[0010] According to some preferred embodiments of the present invention, the electrode comprises a nickel layer, a palladium layer and a gold layer in sequence, wherein the nickel layer covers the surface of the electrode region, the palladium layer covers the surface and sides of the nickel layer, and the gold layer covers the surface and sides of the palladium layer.

[0011] According to some preferred embodiments of the present invention, the thickness of the electrode is 5-7.5 μm; the thickness of the alloy is 0.1-0.15 mm; and the thickness of the ultrathin alloy resistor is 0.10-0.15 mm.

[0012] According to some preferred embodiments of the present invention, the thickness of the nickel layer is 5-7 μm; the thickness of the palladium layer is 0.05-0.1 μm; and the thickness of the gold layer is 0.05-0.1 μm.

[0013] According to some preferred embodiments of the present invention, the ultrathin alloy resistor is composed only of the alloy and electrodes.

[0014] According to some preferred embodiments of the present invention, the resistance of the ultrathin alloy resistor is 1 to 5 mΩ.

[0015] Due to the adoption of the above technical solutions, the advantages of this utility model compared with the prior art are: the ultra-thin alloy resistor of this utility model does not require copper electroplating and solder resist, is thin, and has stable product quality. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the preparation process of alloy resistors in the existing technology;

[0018] Figure 2 This is a schematic diagram of the cross-sectional structure of an alloy resistor in the prior art;

[0019] Figure 3 This is a schematic diagram of the preparation process of the ultrathin alloy resistor in this embodiment of the present invention;

[0020] Figure 4 This is a schematic diagram of the cross-sectional structure of the ultrathin alloy resistor in an embodiment of this utility model;

[0021] In the attached diagram, substrate-1, alloy-2, first solder resist-3, second solder resist-4, copper layer-5, nickel layer-6, tin layer-7, palladium layer-8, and gold layer-9. Detailed Implementation

[0022] To enable those skilled in the art to better understand the technical solutions of this utility model, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of this utility model.

[0023] like Figure 1-2 As shown, in existing alloy resistors, substrate 1 and alloy 2 are laminated together, requiring substrate 1 as a support before the circuit electrodes are fabricated, ultimately resulting in a single finished product. The fabrication steps are as follows: Figure 1 As shown: Alloy 2 + substrate 1 are laminated → first solder resist → copper plating on electrodes → second solder resist → nickel plating → tin plating. Product structure as follows: Figure 2 As shown, the electrode copper layer 5, alloy 2, and substrate 1 are sequentially arranged. The first solder resist layer 3 and the second solder resist layer 4 are located between the electrodes, with the second solder resist layer 4 located above the first solder resist layer 3. The nickel layer 6 and the tin layer 7 cover the electrode copper layer 5. Existing alloy resistors produce irregular circuits, and the functional area alloy 2 pattern is smaller than the electrode size, requiring a substrate 1 for back support; otherwise, the product's strength is easily compromised. This invention's ultra-thin alloy resistor is rectangular, with the functional area circuit being the same width as the electrode, optimizing the process and reducing the product's thickness.

[0024] Specifically, the ultrathin alloy resistor of this invention includes an alloy 2 and electrodes located on the alloy 2. The alloy 2 has a circuit region (corresponding to the first circuit pattern of the dry film) and an electrode region. The circuit region is rectangular and located between the electrode regions. The electrodes are located on the electrode regions, and the width of the circuit region is the same as the spacing between the electrodes. The electrodes include a nickel layer 6, and / or a palladium layer 8, and / or a gold layer 9. Preferably, the electrodes sequentially include a nickel layer 6, a palladium layer 8, and a gold layer 9. The nickel layer 6 covers the surface of the electrode region, the palladium layer 8 covers the surface and sides of the nickel layer 6, and the gold layer 9 covers the surface and sides of the palladium layer 8.

[0025] The electrode thickness is 5–7.5 μm, preferably the nickel layer 6 thickness is 5–7 μm; the palladium layer 8 thickness is 0.05–0.1 μm; the gold layer 9 thickness is 0.05–0.1 μm; the alloy 2 thickness is 0.1–0.15 mm; the ultrathin alloy resistor thickness is 0.10–0.15 mm; and the ultrathin alloy resistor resistance is 1–5 mΩ.

[0026] The preparation method of the ultrathin alloy resistor with the above structure of this utility model includes the following steps:

[0027] The two opposing surfaces of the alloy sheet are bonded to the dry film;

[0028] One side of the alloy sheet with the dry film attached is exposed and developed to form a first circuit pattern of a predetermined shape on the corresponding dry film; and the area of ​​the corresponding electrode on the alloy sheet is exposed.

[0029] Electrode metal electroplating is performed directly on the exposed electrode areas;

[0030] The dry film on the surface of the alloy sheet is removed to obtain an ultrathin alloy resistor.

[0031] Among them, the electrode metal electroplating process involves sequentially plating nickel to form a nickel layer 6, plating palladium to form a palladium layer 8, and plating gold to form a gold layer 9.

[0032] Preferably, the steps include pre-treating the alloy sheet before bonding it to the dry film to remove oxides and oil stains from the surface of the alloy sheet.

[0033] Pretreatment involves pretreating the alloy sheet with a micro-etching solution to remove surface oil and oxides. The micro-etching speed is 1–3 m / min and the micro-etching temperature is 45 ± 5 °C.

[0034] Preferably, the step includes a particle separation step after removing the dry film, wherein particle separation is performed by chemical etching or laser etching. The parameters for chemical etching are: etching rate: 1-3 m / min; etching temperature: 45±5℃. The parameters for laser etching are: laser power 150-250W; laser speed 250-300 mm / s.

[0035] In some embodiments, the method for preparing ultrathin alloy resistors specifically includes the following steps:

[0036] Step S1: Alloy sheet pretreatment

[0037] Before applying the dry film, the surface of the alloy sheet is pretreated to remove oxides and oil stains, which facilitates full adhesion between the dry film and the alloy sheet. The thickness of the alloy sheet is 0.1-0.15mm.

[0038] The pretreatment process is as follows: the alloy sheet is pretreated with a micro-etching solution to remove surface oil and oxides. The micro-etching speed is 1-3 m / min and the micro-etching temperature is 45±5℃.

[0039] The micro-etching solution is a mixture of sulfuric acid and hydrogen peroxide, with the concentration of sulfuric acid in the mixture being 5% ± 1% and the concentration of hydrogen peroxide being 5% ± 1%.

[0040] Step S2, Apply dry film

[0041] Using a laminating machine, the top and bottom sides of the alloy sheet are fully pressed together with the dry film.

[0042] Pressing time: 55-65s, pressing pressure: 40-50KG, pressing temperature: 130-150℃.

[0043] Step S3, Exposure and Development

[0044] One side of the alloy sheet with the dry film attached is exposed and then developed to obtain a first circuit pattern of a predetermined shape on the dry film on one side of the alloy sheet, and the area corresponding to the electrode on the alloy sheet is exposed.

[0045] Step S4: Electrode metal plating

[0046] Electrode metal plating is performed directly on the exposed electrode areas: nickel plating is performed sequentially to form a nickel layer 6, palladium plating is performed to form a palladium layer 8, and gold plating is performed to form a gold layer 9. The thickness of the resulting nickel layer 6 is 5–7 μm; the thickness of the palladium layer 8 is 0.05–0.1 μm; and the thickness of the gold layer 9 is 0.05–0.1 μm.

[0047] Step S5, Demolding

[0048] After electroplating, the alloy sheet undergoes a defilming process to remove the dry film from the surface of the alloy sheet, resulting in a semi-finished sheet.

[0049] Film removal speed: 1~2m / min; Film removal temperature: 45±5℃.

[0050] Step S6, Granulation

[0051] The semi-finished plate is cut into particles to obtain individual alloy resistor products.

[0052] Particle separation is achieved through chemical etching or laser engraving.

[0053] Chemical etching uses an acidic etching solution with an etching rate of 1–3 m / min and an etching temperature of 45 ± 5 °C. The acidic etching solution is a mixture of copper chloride and hydrochloric acid, with a copper chloride concentration of 90–95% and a hydrochloric acid concentration of 5–10%.

[0054] The parameters for laser engraving are: laser power 150-250W; laser speed 250-300mm / s.

[0055] Example 1

[0056] like Figure 3-4 As shown, the ultrathin alloy resistor in this embodiment consists only of alloy 2 and electrodes located on alloy 2. The electrodes sequentially include a nickel layer 6, a palladium layer 8, and a gold layer 9. The nickel layer 6 covers the surface of the electrode area, the palladium layer 8 covers the surface and sides of the nickel layer 6, and the gold layer 9 covers the surface and sides of the palladium layer 8. The thickness of the electrodes is 5–7.5 μm; specifically, the thickness of the nickel layer 6 is 5–7 μm; the thickness of the palladium layer 8 is 0.05–0.1 μm; and the thickness of the gold layer 9 is 0.05–0.1 μm.

[0057] Alloy 2 has a circuit region and an electrode region. The circuit region is rectangular and located between the electrode regions. The electrodes are located on the electrode regions, and the width of the circuit region is the same as the spacing between the electrodes.

[0058] The thickness of alloy 2 is 0.1-0.15mm; the thickness of the ultra-thin alloy resistor is 0.10-0.15mm; the resistance of the ultra-thin alloy resistor is 1-5mΩ.

[0059] Example 2

[0060] The method for preparing the ultrathin alloy resistor in this embodiment specifically includes the following steps:

[0061] Step S1: Alloy sheet pretreatment

[0062] Pre-treating the surface of the alloy sheet before applying the dry film removes oxides and oil stains, which facilitates the full adhesion between the dry film and the alloy sheet.

[0063] The pretreatment process is as follows: the alloy sheet is pretreated with a micro-etching solution to remove surface oil and oxides. The micro-etching speed is 2 m / min and the micro-etching temperature is 45℃.

[0064] The micro-etching solution is a mixture of sulfuric acid and hydrogen peroxide, with the sulfuric acid concentration being 5% and the hydrogen peroxide concentration being 5%.

[0065] Step S2, Apply dry film

[0066] Using a laminating machine, the top and bottom sides of the alloy sheet are fully pressed together with the dry film.

[0067] Pressing time: 60s, pressing pressure: 45KG, pressing temperature: 140℃.

[0068] Step S3, Exposure and Development

[0069] One side of the alloy sheet with the dry film attached is exposed and then developed to obtain a first circuit pattern of a predetermined shape on the dry film on one side of the alloy sheet, and the area corresponding to the electrode on the alloy sheet is exposed.

[0070] Step S4: Electrode metal plating

[0071] Electrode metal plating is performed directly on the exposed electrode areas: nickel plating is performed in sequence to form a nickel layer 6, palladium plating is performed to form a palladium layer 8, and gold plating is performed to form a gold layer 9.

[0072] Step S5, Demolding

[0073] After electroplating, the alloy sheet undergoes a defilming process to remove the dry film from the surface of the alloy sheet, resulting in a semi-finished sheet.

[0074] Film removal speed: 1.5m / min; Film removal temperature: 45℃.

[0075] Step S6, Granulation

[0076] The semi-finished plate is cut into particles to obtain individual alloy resistor products.

[0077] This invention directly plates the electrodes with nickel, palladium, and gold on the alloy; then, after subsequent cutting and granulation, individual products are obtained. Etching is required; the resistance value of the product is directly achieved using laser cutting or other methods. This eliminates the need for bonding to a substrate; the electrodes are directly formed through electroplating, simplifying most manufacturing processes, greatly improving production efficiency, and, more importantly, significantly reducing the product thickness. While maintaining the same resistance value, the existing structure using 1.5mr achieves a product thickness of 0.45mm, while this invention can reduce the product thickness to less than 0.11mm. The main difference between this invention and existing technologies is:

[0078] 1. Current alloy resistor structures involve bonding a substrate and an alloy together, requiring the substrate for support before fabricating the circuit electrodes, ultimately resulting in a single finished product. Because the fabricated circuitry is irregular, the alloy pattern in the functional areas is smaller than the electrode size, necessitating a substrate for back support; otherwise, the product lacks strength and is prone to deformation. This invention's ultra-thin alloy resistor product is rectangular, with the functional area circuitry and electrodes having the same width, optimizing the manufacturing process and reducing the product's thickness.

[0079] 2. In the prior art, the purpose of the first solder resistive step in the alloy resistor structure is to protect the alloy resistor body in order to perform copper plating at the electrodes. After copper plating, the resistance is repaired to bring the product's resistance value to a set range. The purpose of the second solder resistive step is to cover the repair cutting edge with protective ink to prevent oxidation of the repair cutting edge. The ultra-thin alloy resistor product in this utility model adopts a one-step etching method, which does not require a repair process to correct the product's resistance value and does not require solder resistive step.

[0080] 3. The ultra-thin alloy resistor product of this utility model can be used in the conditions of gold wire bonding operation, with the electrodes plated with nickel, palladium and gold.

[0081] The above embodiments obtained by the method of this utility model are only for illustrating the technical concept and features of this utility model. Their purpose is to enable those skilled in the art to understand the content of this utility model and implement it accordingly, and they should not be used to limit the protection scope of this utility model. All equivalent changes or modifications made in accordance with the spirit and essence of this utility model should be included within the protection scope of this utility model.

[0082] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

Claims

1. An ultrathin alloy resistor, characterized in that, It includes an alloy and electrodes located on the alloy; the alloy has a circuit region and an electrode region, the electrodes are located on the electrode regions, and the width of the circuit region is the same as the spacing between the electrodes.

2. The ultrathin alloy resistor according to claim 1, characterized in that, The circuit area is rectangular and located between the electrode areas.

3. The ultrathin alloy resistor according to claim 1, characterized in that, The electrode comprises a nickel layer, and / or a palladium layer, and / or a gold layer.

4. The ultrathin alloy resistor according to claim 1, characterized in that, The electrode comprises a nickel layer, a palladium layer, and a gold layer in sequence. The nickel layer covers the surface of the electrode region, the palladium layer covers the surface and sides of the nickel layer, and the gold layer covers the surface and sides of the palladium layer.

5. The ultrathin alloy resistor according to claim 1, characterized in that, The electrode has a thickness of 5–7.5 μm; the alloy has a thickness of 0.1–0.15 mm; and the ultrathin alloy resistor has a thickness of 0.10–0.15 mm.

6. The ultrathin alloy resistor according to claim 3, characterized in that, The thickness of the nickel layer is 5–7 μm; the thickness of the palladium layer is 0.05–0.1 μm; and the thickness of the gold layer is 0.05–0.1 μm.

7. The ultrathin alloy resistor according to claim 1, characterized in that, The ultrathin alloy resistor consists only of the alloy and electrodes.

8. The ultrathin alloy resistor according to claim 1, characterized in that, The resistance of the ultrathin alloy resistor is 1 to 5 mΩ.

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