A high voltage light emitting diode chip

By setting a polymer filling layer and bridging electrodes on the isolation groove of the high-voltage LED chip, the problems of cracking and tipping during ejector pin operation are solved, improving the reliability and packaging efficiency of the chip and reducing costs.

CN224419211UActive Publication Date: 2026-06-26YANGZHOU CHANGELIGHT
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
YANGZHOU CHANGELIGHT
Filing Date
2025-07-10
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

High-voltage LED chips are prone to chip cracking or puncturing of the insulation layer during the chip ejector operation, which can lead to chip leakage and failure, resulting in poor reliability. Furthermore, the difficulty of the flipping process increases after the chip size is reduced, and abnormalities such as side flipping and vertical crystal formation are more likely to occur.

Method used

A polymer filling layer is set on the isolation groove of the high voltage LED chip, the LED unit is connected by the stacked insulating layer, and the groove and mesa are formed on the epitaxial wafer. The bridging electrode extends to the groove and mesa. The polymer filling layer covers the bottom and sidewall of the isolation groove to form a flattened surface, enhance mechanical strength and uniform pin contact.

Benefits of technology

It improves chip reliability, reduces the risk of stress concentration during pin action, avoids chip breakage and soldering abnormalities, simplifies the packaging process, and reduces costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a kind of high-voltage light-emitting diode chip, by setting up polymer filling layer on the isolation groove, utilize polymer solidification and have the mechanical strength, chemical stability and adhesion required, form a solid, continuous "cushion layer" above the isolation groove, cover and protect the fragile insulating layer isolation groove structure (i.e. ISO channel) below, when the thimble acts in this area, force is first acted on solidified polymer filling layer, solidified polymer usually has certain elasticity or plastic deformation ability, can absorb and disperse the local impact force and stress of thimble exertion, avoid stress excessive concentration in the ISO channel edge below, and enhance the overall mechanical strength of this area, make it can withstand greater external force without rupture, to effectively improve the reliability of chip.Secondly, after filling polymer and solidification, the height difference of wafer surface is significantly reduced, originally uneven surface (with metal line protrusion and ISO channel depression) becomes relatively flat;Flat surface makes subsequent thimble and wafer contact more uniform.Thimble is no longer easy to be stuck in channel edge or only act on narrow channel, but contact flat colloid surface in greater area, more uniform way, thereby greatly reduce local pressure, reduce the risk of stress concentration and damage.
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