MOSFET tube detection system

Abstract

This utility model discloses a MOSFET testing system, including a power management unit, a main control unit, a drive module, a test interface, a testing module, and a communication module. The main control unit is electrically connected to the power management unit, the drive module, the testing module, and the communication module. The drive module is electrically connected to the test interface and the testing module. The testing module includes a detection processor, a static test module, and a dynamic test module. The static test module and the dynamic test module are electrically connected to the detection processor, and the detection processor is electrically connected to the main control unit. By setting up a detection processor, a static test module, and a dynamic test module, this utility model can detect both the static and dynamic parameters of the MOSFET, thereby enabling immediate detection of faults in the power protection device. Feedback can be promptly sent through the communication unit, allowing staff to check and clear the fault in a timely manner, improving the safety and reliability of the smart power protection device.

Description

Technical Field

[0001] This utility model relates to the field of electrical protection device testing equipment, and in particular to a MOSFET tube testing system. Background Technology

[0002] With the widespread adoption of smart power protectors and new energy vehicle charging stations, the use of power MOSFETs has surged. According to industry statistics, in 2023, a single 150kW fast charging station required 48-72 MOSFETs, and a three-phase 63kW smart power protector required 24 MOSFETs. Its reliability directly affects charging safety.

[0003] However, existing MOSFET detection systems only perform static data monitoring of the MOSFET, lacking real-time monitoring. This results in the MOSFET failure being detected only after a period of time has passed, leading to delayed fault detection and reduced safety and reliability of the smart power protection device. Furthermore, existing fault signals cannot be wirelessly transmitted to the monitoring center. Therefore, ensuring the safety and reliability of smart power protection devices is a crucial issue that those skilled in the art must address. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a MOSFET detection system.

[0005] The objective of this utility model is achieved through the following technical solution:

[0006] A MOSFET testing system includes: a power management unit, a main control unit, a drive module, a test interface, a detection module, and a communication module. The main control unit is electrically connected to the power management unit, the drive module, the detection module, and the communication module, respectively. The drive module is electrically connected to the test interface and the detection module, respectively.

[0007] The detection module includes a detection processor, a static testing module, and a dynamic testing module. The static testing module and the dynamic testing module are electrically connected to the detection processor, and the detection processor is electrically connected to the main control unit.

[0008] Preferably, the main control unit includes a data storage device and a main control chip. The main control chip is electrically connected to the data storage device and is also electrically connected to the power management unit, the drive module, the detection module, and the communication module, respectively.

[0009] Preferably, the data storage device includes a blockchain data storage module.

[0010] Preferably, the static test module includes a voltage test unit, a current test unit, and a temperature test unit, which are electrically connected to the detection processor.

[0011] Preferably, the dynamic test module includes a conduction time test unit, a reverse recovery time test unit, a breakdown voltage test unit, and a voltage drop test unit, wherein the conduction time test unit, the reverse recovery time test unit, the breakdown voltage test unit, and the voltage drop test unit are electrically connected to the detection processor.

[0012] Preferably, the voltage drop test unit includes a first switch, a second switch, and an absorption circuit. The control terminals of the first switch and the second switch are electrically connected to the detection processor, the first switch and the second switch are connected in series, and the first switch and the second switch each have an input terminal. One end of the absorption circuit is electrically connected to the input terminal of the first switch, and the other end of the absorption circuit is electrically connected to the input terminal of the second switch.

[0013] Preferably, the communication module includes a network cable connection unit and a wireless connection unit, which are electrically connected to the main control unit.

[0014] Preferably, the wireless connection unit includes a Bluetooth connection unit, a WiFi connection unit, and a 4G / 5G connection unit, and the Bluetooth connection unit, WiFi connection unit, and 4G / 5G connection unit are electrically connected to the main control unit respectively.

[0015] The advantages and beneficial effects of this utility model compared to the prior art are as follows:

[0016] 1. This utility model is a MOSFET detection system. By setting up a detection processor, a static test module and a dynamic test module, it can detect the static parameters of the MOSFET as well as its dynamic parameters. This allows for the immediate detection of faults in the power protection device, timely feedback through the communication unit, and prompt inspection and troubleshooting by staff, thereby improving the safety and reliability of the smart power protection device.

[0017] 2. By setting up a voltage drop test unit, this utility model can monitor and alarm in a timely manner when the driving voltage is pulled down to the failure value during actual operation, thus avoiding premature device failure. Furthermore, by setting up a blockchain data storage module in the data storage device, it is possible to trace various types of data, such as equipment information and fault information, thereby improving the monitoring and management of the power protection device. Attached Figure Description

[0018] Figure 1 This is a schematic block diagram of a MOSFET detection system according to one embodiment of the present invention.

[0019] Figure 2 for Figure 1 The schematic diagram of the dynamic testing module is shown below;

[0020] Figure 3 for Figure 2 The diagram shown is a schematic of the voltage drop test unit. Detailed Implementation

[0021] To facilitate understanding of this utility model, a more complete description will be given below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of this utility model. However, this utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this utility model.

[0022] Please see Figures 1-3 A MOSFET testing system includes: a power management unit, a main control unit, a drive module, a test interface, a detection module, and a communication module. The main control unit is electrically connected to the power management unit, the drive module, the detection module, and the communication module. The drive module is electrically connected to the test interface and the detection module. The power management unit also provides power to the drive module.

[0023] The detection module includes a detection processor, a static testing module, and a dynamic testing module. The static testing module and the dynamic testing module are electrically connected to the detection processor, and the detection processor is electrically connected to the main control unit.

[0024] It should be noted that the power management unit (PMU) provides a stable and suitable power supply to all components. Electrically connected to the main control unit, the PMU sends control commands to the PMU based on the system's operating status and the power requirements of different components, adjusting parameters such as output voltage and current to ensure each component operates under optimal voltage and current conditions. Simultaneously, the PMU also provides the necessary power to the drive module, detection module, and communication module, ensuring their proper functioning. The main control unit coordinates and controls the workflow of each component, processes detection data, communicates with external devices, and automates the detection system, improving efficiency and accuracy. Analysis and processing of detection data allows for timely detection of MOSFET problems and the generation of detailed test reports. Communication with external devices facilitates the transmission and sharing of test results, enabling subsequent analysis and processing by the user. The drive module converts the control signals sent by the main control unit into suitable voltage and current signals for driving the MOSFETs, controlling their operating state. The drive module precisely controls the MOSFETs' on / off state, providing accurate test conditions for the detection module. Meanwhile, the design of the drive module ensures that the MOSFET has good dynamic characteristics during rapid switching, improving the accuracy and reliability of the detection. The test interface provides the physical connection between the MOSFET and the detection system, enabling signal transmission and interaction. The detection processor centrally controls and manages the detection process, improving detection efficiency. The static test module detects parameters of the MOSFET in its static operating state, such as threshold voltage, current, operating temperature, and on-resistance. The dynamic test module detects parameters of the MOSFET in its dynamic operating state, such as conduction time, reverse recovery time, and voltage drop. The dynamic test module comprehensively evaluates the performance of the MOSFET in high-frequency switching applications. For applications with high requirements for switching speed and efficiency, such as smart power protectors, power converters, and motor drives, the dynamic test results have significant reference value. Through dynamic testing, problems in the MOSFET's switching process, such as switching delay and oscillation, can be identified in a timely manner, allowing for corresponding optimization measures. The communication module enables data communication between the detection system and external devices.

[0025] Please see Figure 1The main control unit includes a data storage device and a main control chip. The main control chip is electrically connected to the data storage device and is also electrically connected to the power management unit, drive module, detection module, and communication module. Preferably, the data storage device includes a blockchain data storage module. It should be noted that the data storage device provides data storage space for the system, used to store various parameters, configuration information, historical data, and important business data required for system operation. The main control chip can read the required data from the data storage device at any time to provide a basis for decision-making, and can also write the processed data back to the data storage device for storage in a timely manner to ensure data integrity and traceability. A blockchain data storage module is specifically set up in the data storage device. Blockchain technology, with its decentralized, tamper-proof, and traceable characteristics, provides strong protection for secure data storage and trusted verification. This module encrypts and links key data in the system, such as important operation records and transaction information, according to blockchain rules. Each piece of data is packaged into a block and associated with the previous block through a hash value, forming an irreversible chain. In this way, even if the data in a certain block is tampered with, it will be easily detected due to hash value mismatches, thus ensuring the authenticity and integrity of the data. When data verification is needed, the original data can be quickly and accurately obtained simply by tracing along the blockchain chain, providing solid technical support for the system's security and reliability.

[0026] The static testing module includes a voltage testing unit, a current testing unit, and a temperature testing unit, all of which are electrically connected to the detection processor. It should be noted that the voltage testing unit monitors the voltage parameters of the MOSFET; the current testing unit measures the current value of the MOSFET under different operating conditions; and the temperature testing unit determines whether the operating temperature of the device is within a safe range. This information is transmitted to the main control chip via the detection processor, and then from the main control chip to the external monitoring center via the communication module. The voltage and current measurements are processed in the same manner.

[0027] Please see Figure 2The dynamic testing module includes a turn-on time testing unit, a reverse recovery time testing unit, a breakdown voltage testing unit, and a voltage drop testing unit. These units are electrically connected to the detection processor. The turn-on time testing unit monitors the current and voltage changes of the device in real time at the moment of turn-on. When a drive signal is applied to the device, it begins to conduct, the current gradually increases, and the voltage gradually decreases. The turn-on time testing unit accurately records the time elapsed from the application of the drive signal to the device starting to conduct, until the current and voltage reach a stable state; this is the turn-on time. When the MOSFET switches from the on state to the off state, due to the recombination and diffusion of charge carriers inside the device, a reverse recovery current and reverse recovery time are generated. The reverse recovery time testing unit can simulate the reverse recovery process of the device in an actual circuit by applying a reverse voltage pulse to the device under test. It uses a high-speed current sensor to measure the change in reverse recovery current. The breakdown voltage testing unit gradually increases the reverse voltage applied to the device under test while simultaneously monitoring the current changes of the device in real time. When the current suddenly increases sharply, it indicates that the device has broken down. The reverse voltage value recorded at this time is the breakdown voltage.

[0028] Voltage sag testing units are used to monitor voltage drops in electronic devices during dynamic operation. In actual circuits, sudden load changes, power supply fluctuations, and other factors can cause brief voltage drops. Voltage sags can affect the normal operation of equipment, and may even lead to restarts or malfunctions. The voltage sag testing unit monitors the voltage changes at the input or output terminals of the device under test in real time. It records parameters such as the magnitude, duration, and frequency of voltage sags. When the voltage sag exceeds a preset threshold, the testing unit promptly transmits the relevant information to the detection processor.

[0029] Please see Figure 3The voltage drop test unit includes a first switch, a second switch, and an absorption circuit. The control terminals of the first and second switches are electrically connected to the detection processor. The first and second switches are connected in series, and each switch has an input terminal and an output terminal. One end of the absorption circuit is electrically connected to the input terminal of the first switch, and the other end is electrically connected to the output terminal of the second switch. It should be noted that the first and second switches control the circuit's on / off state through electrical signals from their control terminals. The control terminals of these two switches are electrically connected to the detection processor / main control unit, sending corresponding voltage control signals to the switches according to preset tests and requirements. One end of the absorption circuit is electrically connected to the input terminal of the first switch, and the other end is electrically connected to the output terminal of the second switch. This connection method allows the absorption circuit to monitor the voltage changes across the switches in real time. When the switches switch from the on state to the off state, a large back electromotive force is generated due to the presence of energy storage components such as inductors in the circuit, causing a sharp increase in the voltage across the switches. At this time, the absorption circuit will quickly start to absorb this excess energy, limit the voltage within a safe range, and prevent the switching transistor from being damaged by overvoltage.

[0030] An absorption circuit can consist of components such as a resistor, an absorption capacitor, and a diode. The resistor and diode are connected in series, while the absorption capacitor is connected in series or parallel with the resistor. The resistor dissipates excess energy, the capacitor stores and releases energy, and the diode guides the current direction, ensuring the absorption circuit functions correctly. When the switch is turned off, the capacitor charges rapidly, absorbing energy from the circuit; when the switch is turned on again, the capacitor slowly releases the stored energy through the resistor, preventing a sudden energy release from impacting the circuit.

[0031] The presence of a snubber circuit not only protects the switching transistor but also safeguards the device under test (DUT). During voltage dip testing, without a snubber circuit, voltage spikes generated during transistor switching could be transmitted to the DUT, potentially damaging components or degrading its performance. The snubber circuit effectively suppresses these voltage spikes, ensuring the DUT is tested under a safe voltage environment and improving the accuracy and reliability of the test.

[0032] The first and second switching transistors are connected in reverse series, meaning their gates are connected together and their sources are connected together. The drains of the two transistors form the two input terminals of the voltage drop test unit. When the first switching transistor is forward-biased, it forms a channel with its parasitic diode, putting the voltage drop test unit in a conducting state. Similarly, when the second switching transistor is forward-biased, it forms a channel with its parasitic diode, putting the voltage drop test unit in a conducting state. Thus, by controlling the conduction of the first and second switching transistors, the voltage drop of the MOSFET can be detected in a timely manner, and the test signal can be promptly fed back to the main control unit.

[0033] The communication module includes a wired network connection unit and a wireless connection unit, both of which are electrically connected to the main control unit. Preferably, the wireless connection unit includes a Bluetooth connection unit, a WiFi connection unit, and a 4G / 5G connection unit, all of which are electrically connected to the main control unit. This improves the reliability of the wireless connection.

[0034] The above-described embodiments are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A MOSFET tube detection system, characterized by, include: The system includes a power management unit, a main control unit, a driver module, a test interface, a detection module, and a communication module. The main control unit is electrically connected to the power management unit, the driver module, the detection module, and the communication module, respectively. The driver module is electrically connected to the test interface and the detection module, respectively. The detection module includes a detection processor, a static testing module, and a dynamic testing module. The static testing module and the dynamic testing module are electrically connected to the detection processor, and the detection processor is electrically connected to the main control unit.

2. The MOSFET tube detection system of claim 1, wherein, The main control unit includes a data storage device and a main control chip. The main control chip is electrically connected to the data storage device and is also electrically connected to the power management unit, the drive module, the detection module, and the communication module.

3. The MOSFET tube detection system of claim 2, wherein, The data storage device includes a blockchain data storage module.

4. The MOSFET tube detection system of claim 1, wherein, The static testing module includes a voltage testing unit, a current testing unit, and a temperature testing unit, which are electrically connected to the detection processor.

5. The MOSFET tube detection system of claim 1, wherein, The dynamic testing module includes a conduction time testing unit, a reverse recovery time testing unit, a breakdown voltage testing unit, and a voltage drop testing unit. The conduction time testing unit, the reverse recovery time testing unit, the breakdown voltage testing unit, and the voltage drop testing unit are electrically connected to the detection processor.

6. The MOSFET tube detection system of claim 5, wherein, The voltage drop test unit includes a first switch, a second switch, and an absorption circuit. The control terminals of the first and second switches are electrically connected to the detection processor. The first and second switches are connected in series. The first and second switches each have an input terminal. One end of the absorption circuit is electrically connected to the input terminal of the first switch, and the other end of the absorption circuit is electrically connected to the input terminal of the second switch.

7. The MOSFET tube detection system of claim 5, wherein, The communication module includes a network cable connection unit and a wireless connection unit, which are electrically connected to the main control unit.

8. The MOSFET tube detection system of claim 7, wherein, The wireless connection unit includes a Bluetooth connection unit, a WiFi connection unit, and a 4G / 5G connection unit, which are electrically connected to the main control unit.

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