A high-insulation semiconducting layer internal shielded voltage divider tube

Abstract

This utility model relates to the field of high-voltage electrical equipment technology, specifically disclosing a voltage divider tube with a high-insulation semi-conductive inner shield. The voltage divider tube body comprises, from the inside out, an insulating core layer, a semi-conductive shield layer, and a high-insulation outer sheath. The resistivity of the semi-conductive shield layer exhibits a gradient distribution, and the dielectric strength of the high-insulation outer sheath is ≥30kV / mm. This utility model, through its three-layer composite structure of the insulating core layer, gradient semi-conductive layer, and high-insulation outer sheath, solves the problem of partial discharge caused by electric field concentration in traditional voltage dividers, achieving a uniform axial electric field gradient distribution and reducing the maximum field strength by more than 40%.

Description

Technical Field

[0001] This utility model relates to the field of high-voltage electrical equipment technology, specifically to a high-insulation semi-conductive layer internal shielding voltage divider tube. Background Technology

[0002] Traditional voltage dividers often employ a single insulating layer or a mechanical composite shielding layer, which suffers from problems such as uneven electric field distribution, high risk of partial discharge, and poor interlayer adhesion, and is particularly prone to surface flashover in humid environments. There is an urgent need for a layered optimized structure that balances voltage equalization characteristics with long-term reliability. Utility Model Content

[0003] To address the shortcomings of existing technologies, this invention provides a high-insulation semiconducting layer internal shielded voltage divider tube, which has advantages such as uniform electric field distribution, strong partial discharge suppression, and good environmental adaptability, thus solving the problem of high insulation failure risk under high-voltage conditions.

[0004] This invention relates to a high-insulation semiconducting layer inner shielded voltage divider tube, comprising a voltage divider tube body. The voltage divider tube body comprises, from the inside out, an insulating core layer, a semiconducting shield layer, and a high-insulation outer sheath layer. The resistivity of the semiconducting shield layer is gradient-distributed, and the dielectric strength of the high-insulation outer sheath layer is ≥30kV / mm. This invention solves the problem of partial discharge caused by electric field concentration in traditional voltage divider tubes through a three-layer composite structure of an insulating core layer, a gradient semiconducting layer, and a high-insulation outer sheath layer, achieving a uniform axial electric field gradient distribution and reducing the maximum field strength by more than 40%.

[0005] This invention relates to a high-insulation semiconducting layer internally shielded voltage divider tube, wherein the insulating core layer is a modified epoxy resin composite material with a volume resistivity ≥1×10¹. 5 Ω·cm, this utility model uses a modified epoxy resin composite material (volume resistivity ≥1×10¹) for the insulating core layer. 5 (Ω·cm) to solve the problem of excessive leakage current in the basic insulation layer, achieving stable insulation performance with leakage current ≤1μA under ±800kV high voltage.

[0006] This invention relates to a high-insulation semiconducting layer inner shielded voltage divider tube, wherein the semiconducting shielding layer is composed of carbon nanotubes doped with silicone rubber, with a thickness of 0.5-2 mm and a resistivity transitioning from 1×10³ Ω·cm in the inner layer to 1×10³ Ω·cm in the outer layer. 6 Ω·cm, designed as a gradient resistance structure of carbon nanotube-doped silicone rubber through a semiconductive shielding layer (1×10³→1×10). 6 (Ω·cm) solves the interface discharge problem caused by the abrupt change in resistance of the mechanical composite shielding layer, achieves smooth electric field transition, and reduces axial field strength fluctuation to within ±5%.

[0007] The present invention relates to a high-insulation semi-conductive inner shield voltage divider tube, wherein the thickness ratio of the high-insulation outer sheath to the semi-conductive shield is 3:1 to 5:1. By limiting the thickness ratio of the high-insulation outer sheath to the semi-conductive layer (3:1 to 5:1), the conflict between the difficulty in coordinating the external insulation strength and the internal voltage equalization requirements is resolved, so as to achieve an outer sheath withstand voltage ≥150kV while maintaining the effective voltage equalization range of the semi-conductive layer.

[0008] This utility model features a high-insulation semiconducting layer internal shielding voltage divider tube, in which the three-layer structure is integrally prepared through a co-extrusion molding process, forming molecular-level cross-links at the interlayer interface. The molecular-level cross-linking interface is formed through the co-extrusion molding process, which solves the air gap defect problem of traditional adhesive layers, making the interlayer peel strength ≥5MPa and completely eliminating interfacial partial discharge.

[0009] This utility model relates to a high-insulation semi-conductive layer internal shielded voltage divider tube, wherein the main body of the voltage divider tube is provided with metal flanges at both ends, and the metal flanges are embedded with equalizing rings that are connected to the semi-conductive shielding layer. By embedding the equalizing rings in the metal flanges and connecting them with the semi-conductive layer, the problem of corona discharge caused by end electric field distortion is solved, the electric field strength at the end of the tube is made uniform, and the corona initiation voltage is increased to more than 200kV.

[0010] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0011] 1. This utility model solves the problem of partial discharge caused by the concentration of electric field in traditional voltage divider tubes through a three-layer composite structure of insulating core layer, gradient semiconducting layer and high insulating outer sheath, achieving uniform distribution of axial electric field gradient and reducing the maximum field strength by more than 40%.

[0012] 2. This utility model utilizes a modified epoxy resin composite material (volume resistivity ≥ 1×10¹) for the insulating core layer. 5 (Ω·cm) to solve the problem of excessive leakage current in the basic insulation layer, achieving stable insulation performance with leakage current ≤1μA under ±800kV high voltage.

[0013] A gradient resistance structure (1×10³→1×10³) was designed using a semiconductive shielding layer for carbon nanotube-doped silicone rubber. 6 (Ω·cm) solves the interface discharge problem caused by the abrupt change in resistance of the mechanical composite shielding layer, achieves smooth electric field transition, and reduces axial field strength fluctuation to within ±5%.

[0014] By limiting the thickness ratio of the high-insulation outer sheath to the semi-conductive layer (3:1 to 5:1), the conflict between the difficulty in coordinating the external insulation strength and the internal voltage equalization requirements is resolved, achieving an outer sheath withstand voltage ≥150kV while maintaining the effective voltage equalization range of the semi-conductive layer.

[0015] By forming a molecular-level cross-linked interface through co-extrusion molding, the air gap defect problem of traditional adhesive layers is solved, the interlayer peel strength is ≥5MPa, and the interfacial partial discharge is completely eliminated.

[0016] By embedding an equalizing ring in the metal flange and connecting it to the semi-conductive layer, the corona discharge problem caused by the electric field distortion at the end is solved, the electric field strength at the end of the tube is made uniform, and the corona initiation voltage is increased to more than 200kV. Attached Figure Description

[0017] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0018] Figure 1 This is a schematic diagram of the structure of this utility model;

[0019] Figure 2 This is a schematic diagram of the main structure of the pressure divider tube of this utility model;

[0020] Figure 3 This is a schematic diagram of the equalizing ring structure of this utility model.

[0021] In the diagram: 1. Voltage divider tube body; 101. Insulating core layer; 102. Semi-conductive shielding layer; 103. High insulation outer sheath; 2. Metal flange; 3. Equalizing ring. Detailed Implementation

[0022] The following drawings will disclose several embodiments of this utility model. For clarity, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit this utility model. That is, in some embodiments of this utility model, these practical details are not essential. In addition, for the sake of simplicity, some conventional structures and components will be shown in the drawings in a simple schematic manner.

[0023] Please see Figure 1-3 The present invention relates to a high-insulation semiconducting layer inner shielded voltage divider tube, comprising a voltage divider tube body 1. The voltage divider tube body 1 comprises, from the inside out, an insulating core layer 101, a semiconducting shield layer 102, and a high-insulation outer sheath layer 103. The resistivity of the semiconducting shield layer 102 is gradient-distributed, and the dielectric strength of the high-insulation outer sheath layer 103 is ≥30kV / mm. The present invention solves the problem of partial discharge caused by electric field concentration in traditional voltage divider tubes through a three-layer composite structure of insulating core layer 101, gradient semiconducting layer, and high-insulation outer sheath layer 103, achieving a uniform distribution of axial electric field gradient and reducing the maximum field strength by more than 40%.

[0024] Insulating core layer 101 is a modified epoxy resin composite material with a volume resistivity ≥1×10¹. 5 Ω·cm, this utility model uses a modified epoxy resin composite material (volume resistivity ≥1×10¹) for the insulating core layer 101. 5 (Ω·cm) to solve the problem of excessive leakage current in the basic insulation layer, achieving stable insulation performance with leakage current ≤1μA under ±800kV high voltage.

[0025] The semiconductive shielding layer 102 is composed of carbon nanotube-doped silicone rubber, with a thickness of 0.5-2 mm and a resistivity that transitions from 1×10³ Ω·cm in the inner layer to 1×10³ Ω·cm in the outer layer. 6 Ω·cm, designed as a gradient resistance structure of carbon nanotube-doped silicone rubber through a semiconductive shielding layer 102 (1×10³→1×10⁻⁶). 6 (Ω·cm) solves the interface discharge problem caused by the abrupt change in resistance of the mechanical composite shielding layer, achieves smooth electric field transition, and reduces axial field strength fluctuation to within ±5%.

[0026] The thickness ratio of the high-insulation outer sheath 103 to the semi-conductive shielding layer 102 is 3:1 to 5:1. By limiting the thickness ratio of the high-insulation outer sheath 103 to the semi-conductive layer (3:1 to 5:1), the conflict between the difficulty in coordinating the external insulation strength and the internal voltage equalization requirements is resolved, so as to achieve an outer sheath withstand voltage ≥150kV while maintaining the effective voltage equalization range of the semi-conductive layer.

[0027] The three-layer structure is prepared in one piece through co-extrusion molding process, and molecular-level cross-linking is formed at the interlayer interface. The molecular-level cross-linking interface is formed through co-extrusion molding process, which solves the air gap defect problem of traditional adhesive layers, makes the interlayer peel strength ≥5MPa, and completely eliminates the interfacial partial discharge.

[0028] The voltage divider tube body 1 has metal flanges 2 at both ends. The metal flanges 2 have an equalizing ring 3 that is connected to the semi-conductive shielding layer 102. By using the equalizing ring 3 embedded in the metal flanges 2 and connecting it to the semi-conductive layer, the problem of corona discharge caused by the distortion of the electric field at the end is solved, the electric field strength at the end of the tube is made uniform, and the corona initiation voltage is increased to more than 200kV.

[0029] When using this utility model: the voltage divider tube is connected in series to the DC measurement circuit, the metal flange 2 is grounded, the semi-conductive shielding layer 102 automatically balances the axial potential difference, and the high-insulation outer sheath 103 blocks the surface leakage current caused by external condensation. The measured maximum axial field strength is ≤8kV / cm under ±800kV voltage, and there is no visible corona discharge.

[0030] The above description is merely an embodiment of this utility model and is not intended to limit the scope of this utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of this utility model should be included within the scope of the claims of this utility model.

Claims

1. A high-insulation semiconductive layer internal shielded voltage divider tube comprising a voltage divider tube body (1), characterized in that: The voltage divider tube body (1) includes, from the inside out, an insulating core layer (101), a semi-conductive shielding layer (102), and a high-insulation outer sheath (103). The resistivity of the semi-conductive shielding layer (102) is gradient-distributed, and the dielectric strength of the high-insulation outer sheath (103) is ≥30kV / mm.

2. A high insulating semiconductive layer internal shielded divider tube according to claim 1, characterized in that: The insulating core layer (101) is a modified epoxy resin composite material with a volume resistivity ≥ 1 x 1010 5 Ω·cm.

3. A high insulating semiconductive layer internal shielded divider tube according to claim 1, characterized in that: The semiconductive shielding layer (102) is composed of carbon nanotube-doped silicone rubber, with a thickness of 0.5-2 mm and a resistivity that transitions from 1×10³ Ω·cm in the inner layer to 1×10³ Ω·cm in the outer layer. 6 Ω·cm.

4. A high insulating semiconductive layer internal shielded divider tube according to claim 1, characterized in that: The thickness ratio of the high-insulation outer sheath (103) to the semi-conductive shielding layer (102) is 3:1 to 5:

1.

5. A high-insulation semiconducting layer internal shielded voltage divider tube according to claim 1, characterized in that: The three-layer structure is prepared in one piece through a co-extrusion molding process, and molecular-level cross-linking is formed at the interlayer interface.

6. A high insulating semiconductive layer internal shielded divider tube according to claim 1, characterized in that: The pressure divider tube body (1) has metal flanges (2) at both ends, and the metal flanges (2) have an equalizing ring (3) that is connected to the semi-conductive shielding layer (102).

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