High-temperature-resistant polycrystalline film deposition apparatus

Abstract

The utility model relates to the field of deposition device especially relates to high temperature resistant polycrystal membrane deposition device, including bottom plate, the upper end of bottom plate is fixedly connected with deposition chamber, the upper end of deposition chamber is fixedly connected with the fender and fixed block, one side of deposition chamber is the opening, and the one side of deposition chamber places the sealing plate, the utility model discloses through setting up fender and fixed block on deposition chamber upper end, and the frame shape structure cooperation of both and sealing plate forms the shell system of high temperature resistance, can effectively resist the thermal deformation under high temperature environment, promotes the device structure stability, and the design of the heat conduction cylinder and the limiting disc in heating mechanism can realize the uniform heat conduction to the base, further improved the stability of deposition process, and locking mechanism drives the baffle and sealing plate edge close adhesion through the first electric cylinder, ensures the high air tightness of chamber, and the exhaust mechanism can discharge reaction exhaust gas in time, and the gas generating mechanism accurately control reaction gas flow, is favorable to the deposition of polycrystal membrane.

Description

Technical Field

[0001] This utility model belongs to the field of deposition equipment, specifically relating to a high-temperature resistant polycrystalline film deposition equipment. Background Technology

[0002] As chip performance continues to improve, the heat generated during operation increases dramatically. Currently, polycrystalline films can work stably in high-temperature environments, effectively helping to dissipate heat from chips and ensuring the stable operation of electronic devices.

[0003] When a polycrystalline film deposition apparatus is in operation, the deposition chamber is first evacuated to a specific vacuum level by a vacuum system to reduce gas interference within the chamber. Then, the heating system heats the substrate and reactant gases to a suitable temperature using methods such as resistance heating and radio frequency heating, depending on the polycrystalline film material and deposition process requirements. Afterward, the gas path system uses a mass flow meter to precisely control the flow rate and type of reactant gases and delivers them to the deposition chamber. Inside the deposition chamber, the material is deposited on the substrate to form a polycrystalline film according to the specific deposition method. The reactant gases decompose at high temperatures and react on the substrate surface to generate the polycrystalline film. However, existing polycrystalline film deposition apparatuses typically lack a high-temperature resistant shell structure, making it difficult to improve the stability of the reaction, and further improvements are needed. Utility Model Content

[0004] To overcome the problem that existing polycrystalline film deposition devices typically lack a high-temperature resistant shell structure, making it difficult to improve reaction stability, a high-temperature resistant polycrystalline film deposition device is proposed.

[0005] The technical solution of this utility model is as follows: a high-temperature resistant polycrystalline film deposition device, including a base plate; a deposition chamber is fixedly connected to the upper end of the base plate, a protective plate and a fixing block are fixedly connected to the upper end of the deposition chamber, one side of the deposition chamber is open, a sealing plate is placed on one side of the deposition chamber, the sealing plate and the protective plate are close to each other at their respective ends, a suction mechanism and a gas generating mechanism are provided at the upper end of the base plate, both of which are connected to the interior of the deposition chamber, an exhaust mechanism is provided at the right end of the deposition chamber, a U-shaped groove is formed between the protective plate and the fixing block, a second electric cylinder is fixedly connected to the inner wall of the fixing block, a frame is fixedly connected to the upper end of the sealing plate, the frame and the U-shaped groove are adapted, a limiting hole is opened on the inner wall of the end of the frame away from the protective plate, the limiting hole is adapted to the output shaft of the second electric cylinder, a locking mechanism for limiting the sealing plate is provided at the upper end of the base plate, a heating mechanism is placed on the bottom surface of the inner wall of the deposition chamber, a base is placed on the heating mechanism, and a deposition groove is opened at the upper end of the base.

[0006] Furthermore, the heating mechanism includes a base, support blocks, electric heating tubes, a fixing ring, and a heat-conducting cylinder; a U-shaped seat is placed on the bottom surface of the inner wall of the deposition chamber, the base is placed on the upper end of the U-shaped seat, the upper end of the base is fixed with evenly distributed support blocks, the upper ends of multiple support blocks are jointly fixed with a fixing ring, the upper end of the base is fixed with a heat-conducting cylinder, the upper end of the heat-conducting cylinder is attached to the lower end of the base, the lower end of the base is fixed with a limiting plate, the side wall of the limiting plate is attached to the inner wall of the heat-conducting cylinder.

[0007] Furthermore, a gap is formed between the upper end of the base and the lower end of the air outlet pipe.

[0008] Furthermore, the exhaust mechanism includes a gas collection hood, a blower, and an exhaust pipe; the gas collection hood is fixedly connected through the right end of the sedimentation chamber, the air inlet of the blower is fixedly connected to the right end of the gas collection hood, and one end of the exhaust pipe is fixedly connected to the air outlet of the blower.

[0009] Furthermore, the air extraction mechanism includes an air extraction pump and an air extraction pipe; the air extraction pump is fixedly connected to the upper end of the base plate, and one end of the air extraction pipe is fixedly connected to the air outlet end of the air extraction pump, and the other end of the air extraction pipe passes through the side wall of the sedimentation chamber and extends into the interior of the sedimentation chamber.

[0010] Furthermore, the gas generating mechanism includes a gas generator, a gas input pipe, a solenoid valve, a hollow ring, and an outlet pipe; the gas generator is fixedly connected to the upper end of the base plate, one end of the gas input pipe is fixedly connected to the outlet end of the gas generator, a solenoid valve is provided on the gas input pipe, the other end of the gas input pipe passes through the side wall of the sedimentation chamber and is fixedly connected to a hollow ring, one end of the evenly distributed outlet pipe is fixedly connected to the lower end of the hollow ring, and the other end of the outlet pipe faces the sedimentation tank.

[0011] Furthermore, the locking mechanism includes a first electric cylinder and a stop block; two first electric cylinders are fixedly connected to the upper end of the base plate, the two first electric cylinders are symmetrical about the deposition chamber, and a stop block is fixedly connected to the output shaft of the first electric cylinder. The downward surface of the stop block is L-shaped, and the right angle of the inner wall of the stop block fits with the right angle surface of one side edge of the sealing plate.

[0012] The beneficial effects of this utility model are as follows: By setting a protective plate and a fixing block at the upper end of the deposition chamber, the two, together with the frame structure of the sealing plate, form a high-temperature resistant outer shell system, which can effectively resist thermal deformation under high temperature environment and improve the structural stability of the device. The design of the heat-conducting cylinder and the limiting plate in the heating mechanism can achieve uniform heat conduction to the base, further improving the stability of the deposition process. The locking mechanism drives the stop block to fit tightly with the edge of the sealing plate through the first electric cylinder, ensuring the high airtightness of the chamber. The exhaust mechanism can discharge the reaction waste gas in time. The gas generating mechanism precisely controls the flow rate of the reaction gas, which is conducive to the deposition of polycrystalline films. This solves the problem that the polycrystalline film deposition devices in the prior art usually lack a high-temperature resistant outer shell structure, making it difficult to improve the stability of the reaction. Attached Figure Description

[0013] Figure 1 The diagram shown is a three-dimensional structural schematic of this utility model;

[0014] Figure 2 The diagram shown is a three-dimensional structural schematic of the air extraction mechanism and the gas generating mechanism of this utility model.

[0015] Figure 3 The diagram shown is a three-dimensional structural schematic of the locking mechanism of this utility model;

[0016] Figure 4 The diagram shown is a three-dimensional disassembled structural diagram of the heat-conducting cylinder and the limiting plate of this utility model.

[0017] Figure 5 The diagram shown is a three-dimensional structural schematic of the sealing plate of this utility model;

[0018] Figure 6 The diagram shown is a three-dimensional structural schematic of the exhaust mechanism of this utility model.

[0019] The labels in the attached diagram are as follows: 1. Base plate; 2. Deposition chamber; 21. Chassis; 22. Support block; 23. Heating tube; 24. Fixing ring; 25. Heat-conducting cylinder; 26. Limiting plate; 27. Base; 28. Deposition tank; 3. Protective plate; 4. Sealing plate; 5. Air extraction mechanism; 51. Air extraction pump; 52. Air extraction pipe; 6. Gas generating mechanism; 61. Gas generator; 62. Gas input pipe; 63. Solenoid valve; 64. Hollow ring; 65. Gas outlet pipe; 7. Locking mechanism; 71. First electric cylinder; 72. Stop block; 8. Exhaust mechanism; 81. Gas collection hood; 82. Exhaust fan; 83. Exhaust pipe; 9. Fixing block; 10. U-shaped groove; 11. Second electric cylinder; 12. Frame shape; 13. Limiting hole. Detailed Implementation

[0020] Example 1: Please refer to Figures 1-6A high-temperature resistant polycrystalline film deposition apparatus includes a base plate 1; a deposition chamber 2 is fixedly connected to the upper end of the base plate 1, and a protective plate 3 and a fixing block 9 are fixedly connected to the upper end of the deposition chamber 2. One side of the deposition chamber 2 is open, and a sealing plate 4 is placed on one side of the deposition chamber 2. The sealing plate 4 and the protective plate 3 are close to each other at their respective ends. An air extraction mechanism 5 and a gas generating mechanism 6 are provided at the upper end of the base plate 1. Both the air extraction mechanism 5 and the gas generating mechanism 6 are connected to the interior of the deposition chamber 2. An exhaust mechanism 8 is provided at the right end of the deposition chamber 2. The protective plate 3 and the fixing block 9 are... A U-shaped groove 10 is formed between the fixed blocks 9. A second electric cylinder 11 is fixed to the inner wall of the fixed block 9. A frame 12 is fixed to the upper end of the sealing plate 4. The frame 12 and the U-shaped groove 10 are compatible. A limiting hole 13 is opened on the inner wall of the end of the frame 12 away from the guard plate 3. The limiting hole 13 is compatible with the output shaft of the second electric cylinder 11. A locking mechanism 7 for limiting the sealing plate 4 is provided at the upper end of the base plate 1. A heating mechanism is placed on the bottom surface of the inner wall of the deposition chamber 2. A base 27 is placed on the heating mechanism. A deposition groove 28 is opened at the upper end of the base 27.

[0021] In use, first move the sealing plate 4 from top to bottom and place it on one side of the deposition chamber 2 to block the opening on one side of the deposition chamber 2. Then, activate the locking mechanism 7 to limit the sealing plate 4. Place the base 27 on the heating mechanism and activate the heating mechanism to heat the base 27. Activate the evacuation mechanism 5 to evacuate the deposition chamber 2. Activate the gas generating mechanism 6 to send the reaction gas into the deposition chamber 2. The reaction gas can evenly surround the deposition tank 28. During the reaction, activate the exhaust mechanism 8 to extract the waste gas in the deposition chamber 2, so as to achieve uniform deposition of polycrystalline film on the deposition tank 28.

[0022] Please see Figure 1 and Figure 4 In this embodiment, the heating mechanism includes a base 21, support blocks 22, electric heating tubes 23, fixing rings 24, and a heat-conducting cylinder 25. A U-shaped seat is placed on the bottom surface of the inner wall of the deposition chamber 2, and the base 21 is placed on the upper end of the U-shaped seat. Evenly distributed support blocks 22 are fixed to the upper end of the base 21. The upper ends of multiple support blocks 22 are jointly fixed to a fixing ring 24. The heat-conducting cylinder 25 is fixed to the upper end of the base 21. The upper end of the heat-conducting cylinder 25 is attached to the lower end of the base 27. A limiting disk 26 is fixed to the lower end of the base 27. The side wall of the limiting disk 26 is attached to the inner wall of the heat-conducting cylinder 25.

[0023] Please see Figures 1-4 In this embodiment, a gap is formed between the upper end of the base 27 and the lower end of the air outlet pipe 65.

[0024] Please see Figure 1 and Figure 6In this embodiment, the exhaust mechanism 8 includes a gas collection hood 81, a blower 82, and an exhaust pipe 83; the gas collection hood 81 is fixedly connected through the right end of the sedimentation chamber 2, the air inlet of the blower 82 is fixedly connected to the right end of the gas collection hood 81, and one end of the exhaust pipe 83 is fixedly connected to the air outlet of the blower 82.

[0025] Please see Figure 1 and Figure 2 In this embodiment, the air extraction mechanism 5 includes an air extraction pump 51 and an air extraction pipe 52; the air extraction pump 51 is fixedly connected to the upper end of the base plate 1, and one end of the air extraction pipe 52 is fixedly connected to the air outlet end of the air extraction pump 51. The other end of the air extraction pipe 52 passes through the side wall of the deposition chamber 2 and extends into the interior of the deposition chamber 2.

[0026] Please see Figures 1-3 In this embodiment, the gas generating mechanism 6 includes a gas generator 61, a gas input pipe 62, a solenoid valve 63, a hollow ring 64, and an outlet pipe 65. The gas generator 61 is fixedly connected to the upper end of the base plate 1. One end of the gas input pipe 62 is fixedly connected to the outlet end of the gas generator 61. The solenoid valve 63 is provided on the gas input pipe 62. The other end of the gas input pipe 62 passes through the side wall of the deposition chamber 2 and is fixedly connected to the hollow ring 64. One end of the evenly distributed outlet pipe 65 is fixedly connected to the lower end of the hollow ring 64. The other end of the outlet pipe 65 faces the deposition tank 28.

[0027] Example 2: Please refer to Figure 3 Based on Embodiment 1, this application provides a technical solution: the locking mechanism 7 includes a first electric cylinder 71 and a stop block 72; two first electric cylinders 71 are fixedly connected to the upper end of the base plate 1, the two first electric cylinders 71 are symmetrical about the deposition chamber 2, and a stop block 72 is fixedly connected to the output shaft of the first electric cylinder 71. The downward surface of the stop block 72 is L-shaped, and the right angle of the inner wall of the stop block 72 fits with the right angle surface of one side edge of the sealing plate 4.

[0028] Working principle: When in use, the sealing plate 4 is first moved from top to bottom to the opening side of the deposition chamber 2. The two first electric cylinders 71 of the locking mechanism 7 drive the stop block 72 so that the L-shaped right angle of the inner wall of the stop block 72 is tightly fitted with the right angle surface of one side edge of the sealing plate 4, thereby limiting and fixing the sealing plate 4.

[0029] Next, the second electric cylinder 11 is activated to extend its output shaft and insert it into the limiting hole 13 of the frame 12, fixing the frame 12 in the U-shaped groove 10 between the guard plate 3 and the fixing block 9, thereby firmly sealing the sealing plate 4 at the opening of the deposition chamber 2.

[0030] Next, the base 27 is placed on the heat-conducting cylinder 25 of the heating mechanism. The limiting plate 26 at the lower end of the base 27 is in contact with the inner wall of the heat-conducting cylinder 25 to ensure positioning. The electric heating tube 23 is activated to heat the base 21. The heat is conducted to the fixing ring 24 through the support block 22 and evenly transferred to the deposition tank 28 of the base 27 by the heat-conducting cylinder 25.

[0031] Then, the vacuum pump 51 of the vacuum mechanism 5 is started, and the vacuum chamber 2 is evacuated to a specific vacuum level through the vacuum pipe 52. Then, the gas generator 61 of the gas generating mechanism 6 is turned on to generate reaction gas. After the flow rate is controlled by the gas input pipe 62 and the solenoid valve 63, the gas is sprayed out towards the deposition tank 28 through the hollow ring 64 and the evenly distributed gas outlet pipe 65. The reaction gas decomposes at high temperature and reacts on the surface of the deposition tank 28 to generate a polycrystalline film.

[0032] During the reaction, the exhaust fan 82 of the exhaust mechanism 8 promptly discharges waste gas through the gas collection hood 81 and the exhaust pipe 83, ensuring the stability of the reaction environment in the deposition chamber 2, and finally uniformly depositing a polycrystalline film on the deposition tank 28.

[0033] Throughout the process, the high-temperature resistant outer shell structure composed of the protective plate 3, the fixing block 9, the frame 12, and the sealing plate 4 effectively resists high temperatures.

Claims

1. A high-temperature resistant polycrystalline film deposition apparatus, comprising a base plate (1); characterized in that: A sedimentation chamber (2) is fixedly connected to the upper end of the base plate (1). A protective plate (3) and a fixing block (9) are fixedly connected to the upper end of the sedimentation chamber (2). One side of the sedimentation chamber (2) is open. A sealing plate (4) is placed on one side of the sedimentation chamber (2). The sealing plate (4) and the protective plate (3) are close to each other at their respective ends. An air extraction mechanism (5) and a gas generating mechanism (6) are provided at the upper end of the base plate (1). Both the air extraction mechanism (5) and the gas generating mechanism (6) are connected to the interior of the sedimentation chamber (2). An exhaust mechanism (8) is provided at the right end of the sedimentation chamber (2). A U-shape is formed between the protective plate (3) and the fixing block (9). The inner wall of the groove (10) and the fixing block (9) is fixed with a second electric cylinder (11). The upper end of the sealing plate (4) is fixed with a frame (12). The frame (12) and the U-shaped groove (10) are compatible. The inner wall of the frame (12) away from the guard plate (3) is provided with a limiting hole (13). The limiting hole (13) is compatible with the output shaft of the second electric cylinder (11). The upper end of the base plate (1) is provided with a locking mechanism (7) for limiting the sealing plate (4). The bottom surface of the inner wall of the deposition chamber (2) is provided with a heating mechanism. A base (27) is placed on the heating mechanism. A deposition groove (28) is provided on the upper end of the base (27).

2. The high-temperature resistant polycrystalline film deposition apparatus according to claim 1, characterized in that: The heating mechanism includes a chassis (21), a support block (22), an electric heating tube (23), a fixing ring (24), and a heat-conducting cylinder (25). A U-shaped seat is placed on the bottom surface of the inner wall of the deposition chamber (2), and a chassis (21) is placed on the upper end of the U-shaped seat. The upper end of the chassis (21) is fixed with evenly distributed support blocks (22), and the upper ends of multiple support blocks (22) are fixed with a fixing ring (24). The upper end of the chassis (21) is fixed with a heat-conducting cylinder (25), and the upper end of the heat-conducting cylinder (25) is attached to the lower end of the base (27). The lower end of the base (27) is fixed with a limiting plate (26), and the side wall of the limiting plate (26) is attached to the inner wall of the heat-conducting cylinder (25).

3. The high-temperature resistant polycrystalline film deposition apparatus according to claim 1, characterized in that: A gap is formed between the upper end of the base (27) and the lower end of the air outlet (65).

4. The high-temperature resistant polycrystalline film deposition apparatus according to claim 1, characterized in that: The exhaust mechanism (8) includes a gas collection hood (81), a blower (82) and an exhaust pipe (83); the gas collection hood (81) is fixedly connected through the right end of the sedimentation chamber (2), the air inlet of the blower (82) is fixedly connected to the right end of the gas collection hood (81), and one end of the exhaust pipe (83) is fixedly connected to the air outlet of the blower (82).

5. The high-temperature resistant polycrystalline film deposition apparatus according to claim 1, characterized in that: The air extraction mechanism (5) includes an air extraction pump (51) and an air extraction pipe (52); the air extraction pump (51) is fixedly connected to the upper end of the base plate (1), and one end of the air extraction pipe (52) is fixedly connected to the air outlet end of the air extraction pump (51). The other end of the air extraction pipe (52) passes through the side wall of the sedimentation chamber (2) and extends into the interior of the sedimentation chamber (2).

6. The high-temperature resistant polycrystalline film deposition apparatus according to claim 1, characterized in that: The gas generating mechanism (6) includes a gas generator (61), a gas input pipe (62), a solenoid valve (63), a hollow ring (64), and an outlet pipe (65). The gas generator (61) is fixedly connected to the upper end of the base plate (1). One end of the gas input pipe (62) is fixedly connected to the outlet end of the gas generator (61). The solenoid valve (63) is provided on the gas input pipe (62). The other end of the gas input pipe (62) passes through the side wall of the sedimentation chamber (2) and is fixedly connected to the hollow ring (64). One end of the evenly distributed outlet pipe (65) is fixedly connected to the lower end of the hollow ring (64). The other end of the outlet pipe (65) faces the sedimentation tank (28).

7. The high-temperature resistant polycrystalline film deposition apparatus according to claim 1, characterized in that: The locking mechanism (7) includes a first electric cylinder (71) and a stop (72); two first electric cylinders (71) are fixedly connected to the upper end of the base plate (1), the two first electric cylinders (71) are symmetrical about the deposition chamber (2), and a stop (72) is fixedly connected to the output shaft of the first electric cylinder (71). The downward surface of the stop (72) is L-shaped, and the right angle of the inner wall of the stop (72) fits with the right angle of one side edge of the sealing plate (4).

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