A mixed gas uniform mixing device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANGHAI YAMEI MICROWAVE INSTRUMENT FACTORY CO LTD
- Filing Date
- 2025-08-21
- Publication Date
- 2026-07-21
AI Technical Summary
During the preparation of tantalum aluminum nitride alloy thin films, the mixing rate of nitrogen and argon in the mixing tank is slow, resulting in uneven output of the mixed gas, which affects the performance and quality stability of the thin film.
A gas homogenization device is used, including a premixed gas component and a mixing component. By designing the gas inlet, guide plate and partition plate, it is ensured that the gas enters as required and forms a rotating airflow and collision mixing in the mixing chamber. The gas ratio is adjusted according to the volume difference of the gas storage tank to improve the mixing rate and uniformity.
It achieves efficient and uniform mixing of nitrogen and argon, ensuring consistent film performance and quality stability, adapting to the needs of multi-component gas mixing, and improving the accuracy and flexibility of mixed gas ratio control.
Smart Images

Figure CN224524597U_ABST