Fault detection alarm circuit for IGBT module

By designing a fault detection alarm circuit for voltage, current, and temperature acquisition units, the problem of single detection parameters for IGBT modules is solved, enabling comprehensive monitoring and timely alarm of module status, and ensuring system safety and stability.

CN224536122UActive Publication Date: 2026-07-21JIANGSU XINHUARUI MICROELECTRONICS CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
JIANGSU XINHUARUI MICROELECTRONICS CO LTD
Filing Date
2025-06-13
Publication Date
2026-07-21

Smart Images

  • Figure CN224536122U_ABST
    Figure CN224536122U_ABST
Patent Text Reader

Abstract

The utility model relates to IGBT module technical field, specifically, it is the fault detection alarm circuit of IGBT module, including IGBT module, detection module, detection chip and alarm module, and detection module includes voltage acquisition unit, current acquisition unit and temperature acquisition unit, voltage acquisition unit is used for detecting the collector voltage value of IGBT module, and current acquisition unit is used for detecting the on current value of IGBT module, and temperature acquisition unit is used for detecting the working temperature of IGBT module, in the utility model, the collector voltage value, on current value and working temperature of IGBT module can be detected in real time, realize the comprehensive monitoring of module working condition, compared with the detection mode of only monitoring single parameter, can more timely, accurately discover the abnormal situation of module, provides the basis for taking measures in advance to avoid the expansion of fault.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This utility model relates to the field of IGBT module technology, and more specifically, to a fault detection and alarm circuit for IGBT modules. Background Technology

[0002] As a power semiconductor device, IGBT modules are widely used in many fields such as industrial frequency conversion speed regulation, new energy power generation, and electric vehicles. In actual operation, the working state of IGBT modules is easily affected by various factors, such as overvoltage, overcurrent, and overheating. If these abnormal conditions are not detected and handled in time, they will lead to module damage, which will affect the normal operation of the entire system and even cause safety accidents.

[0003] The utility model patent with announcement number CN207504836U discloses an IGBT driving circuit, including an IGBT module, a driving chip N4, an input filtering circuit and an output current limiting circuit, as well as a push-pull amplifier circuit, a short-circuit clamping circuit, a fault detection circuit and a two-level soft turn-off circuit.

[0004] Although this invention can effectively increase the gate drive current capability of the IGBT module and provide overvoltage protection for the IGBT module, the single detection parameter results in too few fault types that cannot meet the detection requirements of the IGBT module. Utility Model Content

[0005] The purpose of this invention is to provide a fault detection alarm circuit for IGBT modules to solve the problem of single detection parameters mentioned in the background art.

[0006] To achieve the above objectives, this utility model provides the following technical solution:

[0007] The fault detection and alarm circuit for an IGBT module includes an IGBT module, a detection module, a detection chip, and an alarm module. The detection module includes a voltage acquisition unit, a current acquisition unit, and a temperature acquisition unit. The voltage acquisition unit detects the collector voltage of the IGBT module, the current acquisition unit detects the on-state current of the IGBT module, and the temperature acquisition unit detects the operating temperature of the IGBT module. The outputs of the voltage, current, and temperature acquisition units are all connected to the input pins of the detection chip. The output pins of the detection chip are connected to the alarm module. When the detection chip detects an abnormality in the IGBT module, it controls the alarm module to trigger an audible and visual alarm.

[0008] Preferably, the voltage acquisition unit includes resistors R1, R2, and R3, a switch Q1, a resistor R4, a capacitor C1, a resistor R5, a resistor R6, and an operational amplifier U1, wherein the switch Q1 is an NMOS transistor.

[0009] The first end of resistor R1 is connected to the gate of the IGBT module, the second end of resistor R1 is connected to the first end of resistor R2, and the second end of resistor R2 is grounded. The drain of switching transistor Q1 is connected to the collector of the IGBT module, the gate of switching transistor Q1 is connected to the second end of resistor R1, the source of switching transistor Q1 is connected to the first end of resistor R4, the second end of resistor R4 is connected to the non-inverting input of operational amplifier U1, the first end of resistor R3 is connected to the first end of resistor R4, and the second end of resistor R3 is grounded. The first end of capacitor C1 is connected to the second end of resistor R4, and the second end of capacitor C1 is grounded. The first end of resistor R5 is grounded, and the second end of resistor R5 is connected to the inverting input of operational amplifier U1. The first end of resistor R6 is connected to the inverting input of operational amplifier U1, and the second end of resistor R6 is connected to the output of operational amplifier U1. The output of operational amplifier U1 is connected to the analog-to-digital conversion pin of the detection chip.

[0010] Preferably, the current acquisition unit includes resistors R7, R8, R9, R10, R11 and operational amplifier U2;

[0011] The first terminal of resistor R7 is connected to the emitter of the IGBT module, and the second terminal of resistor R7 is grounded. The first terminal of resistor R8 is connected to the first terminal of resistor R7, and the second terminal of resistor R8 is connected to the inverting input terminal of operational amplifier U2. The first terminal of resistor R9 is connected to the second terminal of resistor R7, and the second terminal of resistor R9 is connected to the non-inverting input terminal of operational amplifier U2. The first terminal of resistor R10 is connected to the inverting input terminal of operational amplifier U2, and the second terminal of resistor R10 is connected to the output terminal of operational amplifier U2. The first terminal of resistor R11 is connected to the non-inverting input terminal of operational amplifier U2, and the second terminal of resistor R11 is grounded. The output terminal of operational amplifier U2 is connected to the analog-to-digital conversion pin of the detection chip.

[0012] Preferably, the temperature acquisition unit includes resistors R12, R13, R14, a thermistor RT, operational amplifier U3, resistors R15, R16, R17, operational amplifier U4, resistors R18, R19, R20, R21, and operational amplifier U5, wherein the resistance values ​​of resistors R12, R13, R14, and the thermistor RT are equal.

[0013] The first terminal of resistor R12 is connected to the power supply VCC, the second terminal of resistor R12 is connected to the first terminal of resistor R14, the second terminal of resistor R14 is grounded, the first terminal of resistor R13 is connected to the power supply VCC, the second terminal of resistor R13 is connected to the first terminal of the thermistor RT, the second terminal of the thermistor RT is grounded.

[0014] Operational amplifier U3's non-inverting input is connected to the second terminal of resistor R12; the first terminal of resistor R15 is connected to the inverting input of operational amplifier U3; the second terminal of resistor R15 is connected to the inverting input of operational amplifier U4; the non-inverting input of operational amplifier U4 is connected to the second terminal of resistor R13; the first terminal of resistor R16 is connected to the inverting input of operational amplifier U3; the second terminal of resistor R16 is connected to the output of operational amplifier U3; the first terminal of resistor R17 is connected to the inverting input of operational amplifier U4; the second terminal of resistor R17 is connected to the output of operational amplifier U4; and the first terminal of resistor R18... One end of resistor R18 is connected to the output of operational amplifier U3, the second end of resistor R18 is connected to the inverting input of operational amplifier U5, the first end of resistor R19 is connected to the output of operational amplifier U4, the second end of resistor R19 is connected to the non-inverting input of operational amplifier U5, the first end of resistor R20 is connected to the inverting input of operational amplifier U5, the second end of resistor R20 is connected to the output of operational amplifier U5, the first end of resistor R21 is connected to the non-inverting input of operational amplifier U5, the second end of resistor R21 is grounded, and the output of operational amplifier U5 is connected to the analog-to-digital conversion pin of the detection chip.

[0015] Preferably, the alarm module includes indicator lights L1, L2, L3, L4, L5, resistors R22 and R23, a switching transistor Q2, a resistor R24, and a buzzer BL, wherein the switching transistor Q2 is a PNP transistor.

[0016] The first terminals of indicator lights L1, L2, L3, L4 and L5 are respectively connected to the output pins of the detection chip, and the second terminals of indicator lights L1, L2, L3, L4 and L5 are all grounded. The detection chip outputs a PWM signal to control indicator lights L1, L2, L3, L4 and L5.

[0017] The first end of resistor R22 is connected to the output pin of the detection chip, the second end of resistor R22 is connected to the base of the switching transistor Q2, the first end of resistor R23 is connected to the power supply VCC, the second end of resistor R23 is connected to the base of the switching transistor Q2, the emitter of the switching transistor Q2 is connected to the power supply VCC, the collector of the switching transistor Q2 is connected to the first end of resistor R24, the second end of resistor R24 ​​is connected to the first end of buzzer BL, and the second end of buzzer BL is grounded.

[0018] Preferably, the system also includes a display module and a communication module, both of which are connected to the detection chip via signals.

[0019] Compared with the prior art, the beneficial effects of this utility model are:

[0020] This utility model, by setting up voltage acquisition unit, current acquisition unit and temperature acquisition unit, can detect the collector voltage value, conduction current value and operating temperature of IGBT module in real time, realize comprehensive monitoring of module operating status, and compared with the detection method that only monitors a single parameter, can detect abnormal conditions of the module more timely and accurately, and provide a basis for taking measures in advance to avoid the expansion of faults. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the overall structure of the utility model;

[0022] Figure 2 This is a circuit diagram of the voltage acquisition unit and the current acquisition unit in the utility model.

[0023] Figure 3 This is a circuit diagram of the temperature acquisition unit in the utility model.

[0024] Figure 4 This is a circuit diagram of the alarm module in the utility model.

[0025] Figure 5 This is a partial structural schematic diagram of the utility model;

[0026] In the picture:

[0027] 1. IGBT module;

[0028] 2. Detection module; 20. Voltage acquisition unit; 21. Current acquisition unit; 22. Temperature acquisition unit;

[0029] 3. Detection chip;

[0030] 4. Alarm module;

[0031] 5. Display module;

[0032] 6. Communication module. Detailed Implementation

[0033] The technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0034] Please see Figures 1-5 The present invention provides the following technical solution:

[0035] The fault detection and alarm circuit for the IGBT module includes an IGBT module 1, a detection module 2, a detection chip 3, and an alarm module 4. The detection chip 3 internally sets corresponding thresholds to determine whether various parameters are normal. The detection module 2 includes a voltage acquisition unit 20, a current acquisition unit 21, and a temperature acquisition unit 22. The voltage acquisition unit 20 detects the collector voltage of the IGBT module 1, the current acquisition unit 21 detects the on-state current of the IGBT module 1, and the temperature acquisition unit 22 detects the operating temperature of the IGBT module 1. The outputs of the voltage acquisition unit 20, current acquisition unit 21, and temperature acquisition unit 22 are all connected to the alarm module 4. The input pin of the detection chip 3 is connected to the output pin of the alarm module 4. When the detection chip 3 detects an abnormality in the IGBT module 1, it controls the alarm module 4 to issue an audible and visual alarm. The detection chip 3 can use a common microprocessor. The collector voltage is a key indicator of the operating status of the IGBT module 1. Under normal operation, the collector voltage is stable within a specific range. Once it exceeds this range, it may indicate an overvoltage or undervoltage fault. Overvoltage will cause the module's insulation layer to break down, resulting in permanent damage. Undervoltage will prevent the module from conducting normally, affecting the system's power output. The voltage acquisition unit 20 can detect these faults in a timely manner by monitoring the collector voltage value in real time. Abnormal voltage fluctuations provide a basis for taking overvoltage and undervoltage protection measures in advance, preventing module damage due to voltage issues and ensuring stable system operation. The on-state current reflects the load and power consumption of IGBT module 1. Overcurrent is one of the common causes of IGBT module 1 damage, which may be caused by load short circuits, overloads, etc. Sustained overcurrent will cause a sharp increase in the power consumption of IGBT module 1, leading to chip overheating and burnout. The current acquisition unit 21 measures the on-state current value, which can monitor the module's current status in real time. Once an overcurrent is detected, it can quickly take protective measures such as current limiting and shutdown to prevent module damage due to overcurrent, ensuring safe system operation and simultaneously contributing to… To analyze system load changes and optimize system performance; IGBT module 1 generates heat due to its own power consumption during operation. Excessive operating temperature will seriously affect its performance and reliability, and may even cause thermal runaway leading to module damage. Different temperature ranges have different effects on the lifespan and stability of the module. Temperature acquisition unit 22 measures the operating temperature and can monitor the module's heat generation in real time. When the temperature approaches or exceeds the upper limit of allowable heat dissipation, heat dissipation measures are initiated in time, such as turning on the fan and increasing the heat sink to prevent IGBT module 1 from being damaged due to overheating. It can also predict potential module failures by analyzing temperature change trends, arrange maintenance in advance, and improve the reliability and stability of the system.

[0036] In this embodiment, the voltage acquisition unit 20 includes resistors R1, R2, and R3, a switch Q1, a resistor R4, a capacitor C1, resistors R5 and R6, and an operational amplifier U1. The switch Q1 is an NMOS transistor. The IGBT module 1 is typically driven by a PWM signal. The conduction of the switch Q1 is synchronized with the drive signal of the IGBT module 1, and it only works when the IGBT module 1 is turned on. Through the series circuit composed of resistors R3, R4, and C1, the square wave signal of the IGBT module 1's turn-on voltage drop is converted into an average value, which is then amplified by the operational amplifier U1 and output. The resistance value of resistor R4 needs to be relatively large to reduce the current of the voltage acquisition unit 20, reduce power consumption, and avoid interfering with the driving operation of the IGBT module 1.

[0037] The first terminal of resistor R1 is connected to the gate of IGBT module 1, the second terminal of resistor R1 is connected to the first terminal of resistor R2, and the second terminal of resistor R2 is grounded. The drain of switching transistor Q1 is connected to the collector of IGBT module 1, the gate of switching transistor Q1 is connected to the second terminal of resistor R1, the source of switching transistor Q1 is connected to the first terminal of resistor R4, the second terminal of resistor R4 is connected to the non-inverting input terminal of operational amplifier U1, the first terminal of resistor R3 is connected to the first terminal of resistor R4, and the second terminal of resistor R3 is grounded. The first terminal of capacitor C1 is connected to the second terminal of resistor R4, and the second terminal of capacitor C1 is grounded. The first terminal of resistor R5 is grounded, and the second terminal of resistor R5 is connected to the inverting input terminal of operational amplifier U1. The first terminal of resistor R6 is connected to the inverting input terminal of operational amplifier U1, and the second terminal of resistor R6 is connected to the output terminal of operational amplifier U1. The output terminal of operational amplifier U1 is connected to the analog-to-digital conversion pin of detection chip 3.

[0038] Specifically, the current acquisition unit 21 includes resistors R7, R8, R9, R10, and R11 and operational amplifier U2. Resistor R7 serves as the sampling resistor. The second end of resistor R7 can also be connected to other electronic components and does not necessarily need to be grounded. The current data is converted into voltage data through the sampling resistor, then amplified by operational amplifier U2, and then received by detection chip 3.

[0039] The first terminal of resistor R7 is connected to the emitter of IGBT module 1, and the second terminal of resistor R7 is grounded. The first terminal of resistor R8 is connected to the first terminal of resistor R7, and the second terminal of resistor R8 is connected to the inverting input terminal of operational amplifier U2. The first terminal of resistor R9 is connected to the second terminal of resistor R7, and the second terminal of resistor R9 is connected to the non-inverting input terminal of operational amplifier U2. The first terminal of resistor R10 is connected to the inverting input terminal of operational amplifier U2, and the second terminal of resistor R10 is connected to the output terminal of operational amplifier U2. The first terminal of resistor R11 is connected to the non-inverting input terminal of operational amplifier U2, and the second terminal of resistor R11 is grounded. The output terminal of operational amplifier U2 is connected to the analog-to-digital conversion pin of detection chip 3.

[0040] Furthermore, the temperature acquisition unit 22 includes resistors R12, R13, R14, a thermistor RT, operational amplifier U3, resistors R15, R16, R17, operational amplifier U4, resistors R18, R19, R20, R21, and operational amplifier U5. The resistance values ​​of resistors R12, R13, R14, and the thermistor RT are equal. Resistors R12, R13, R14, and the thermistor RT form a Huygens bridge. When the temperature changes, the resistance value of the thermistor RT changes, and the change is amplified by the instrumentation amplifier composed of operational amplifiers U3, U4, and U5. Finally, the temperature data is received by the detection chip 3.

[0041] The first terminal of resistor R12 is connected to the power supply VCC, the second terminal of resistor R12 is connected to the first terminal of resistor R14, the second terminal of resistor R14 is grounded, the first terminal of resistor R13 is connected to the power supply VCC, the second terminal of resistor R13 is connected to the first terminal of the thermistor RT, the second terminal of the thermistor RT is grounded.

[0042] Operational amplifier U3's non-inverting input is connected to the second terminal of resistor R12; the first terminal of resistor R15 is connected to the inverting input of operational amplifier U3; the second terminal of resistor R15 is connected to the inverting input of operational amplifier U4; the non-inverting input of operational amplifier U4 is connected to the second terminal of resistor R13; the first terminal of resistor R16 is connected to the inverting input of operational amplifier U3; the second terminal of resistor R16 is connected to the output of operational amplifier U3; the first terminal of resistor R17 is connected to the inverting input of operational amplifier U4; the second terminal of resistor R17 is connected to the output of operational amplifier U4; and resistor R18... The first terminal of resistor R18 is connected to the output terminal of operational amplifier U3. The second terminal of resistor R18 is connected to the inverting input terminal of operational amplifier U5. The first terminal of resistor R19 is connected to the output terminal of operational amplifier U4. The second terminal of resistor R19 is connected to the non-inverting input terminal of operational amplifier U5. The first terminal of resistor R20 is connected to the inverting input terminal of operational amplifier U5. The second terminal of resistor R20 is connected to the output terminal of operational amplifier U5. The first terminal of resistor R21 is connected to the non-inverting input terminal of operational amplifier U5. The second terminal of resistor R21 is grounded. The output terminal of operational amplifier U5 is connected to the analog-to-digital conversion pin of detection chip 3.

[0043] In addition, the alarm module 4 includes indicator lights L1, L2, L3, L4, L5, resistors R22 and R23, a switching transistor Q2, a resistor R24, and a buzzer BL. The switching transistor Q2 is a PNP transistor, and the indicator lights L1, L2, L3, L4, and L5 can be selected to use different colors of lights.

[0044] The first ends of indicator lights L1, L2, L3, L4 and L5 are respectively connected to the output pins of detection chip 3. The second ends of indicator lights L1, L2, L3, L4 and L5 are all grounded. Detection chip 3 outputs PWM signals to control indicator lights L1, L2, L3, L4 and L5, thereby achieving a flashing effect.

[0045] The first end of resistor R22 is connected to the output pin of detection chip 3, and the second end of resistor R22 is connected to the base of switching transistor Q2. The first end of resistor R23 is connected to power supply VCC, and the second end of resistor R23 is connected to the base of switching transistor Q2. The emitter of switching transistor Q2 is connected to power supply VCC, and the collector of switching transistor Q2 is connected to the first end of resistor R24. The second end of resistor R24 ​​is connected to the first end of buzzer BL, and the second end of buzzer BL is grounded. When the base of switching transistor Q2 is at a low level, switching transistor Q2 is turned on, and buzzer BL is working.

[0046] It is worth noting that the system also includes a display module 5 and a communication module 6. Both the display module 5 and the communication module 6 are connected to the detection chip 3. Common types of display modules 5 include LED digital tubes, LCD screens, or OLED screens. The communication module 6 can use wireless communication modules such as 4G modules, Bluetooth modules, and Wi-Fi modules.

[0047] When the fault detection alarm circuit of the IGBT module of this utility model is in use, the IGBT module 1 is driven by a PWM signal. When the module is turned on, the switching transistor Q1 in the voltage acquisition unit 20 is turned on synchronously. The collector voltage of the IGBT module 1 is divided by resistors R1 and R2. The gate of the switching transistor Q1 is connected between resistors R1 and R2 to obtain the drive signal. After the switching transistor Q1 is turned on, the collector voltage is converted into an average value by a series circuit composed of resistors R3, R4 and capacitor C1. This signal is input to the non-inverting input terminal of the operational amplifier U1. The inverting input terminal of the operational amplifier U1 is grounded through resistor R5, and a feedback loop is formed by resistor R6 to stabilize the amplification factor. Finally, the amplified voltage signal is connected from the output terminal of the operational amplifier U1 to the analog-to-digital conversion pin of the detection chip 3 to complete the acquisition of the collector voltage value.

[0048] In the current acquisition unit 21, resistor R7 is used as the sampling resistor. The emitter current of IGBT module 1 flows through resistor R7, generating a voltage drop across resistor R7. Resistor R8 connects the voltage at the first end of resistor R7 to the inverting input of operational amplifier U2, and resistor R9 connects the voltage at the second end of resistor R7 to the non-inverting input of operational amplifier U2. In this way, the current signal is converted into a voltage signal. Resistor R10 is connected between the inverting input and output of operational amplifier U2 to form feedback. Resistor R11 is grounded to stabilize the potential of the non-inverting input. The amplified voltage signal is sent from the output of operational amplifier U2 to the analog-to-digital conversion pin of detection chip 3 to realize the acquisition of the conduction current value.

[0049] In the temperature acquisition unit 22, resistors R12, R13, and R14 and the thermistor RT form a Huygens bridge. When the temperature changes, the resistance of the thermistor RT changes, and the bridge becomes unbalanced. The data is then amplified by the instrument amplifier consisting of operational amplifiers U3, U4, and U5, and finally received by the detection chip 3.

[0050] The detection chip 3 has pre-set thresholds for collector voltage, on-current, and operating temperature. The detection chip 3 analyzes the received voltage, current, and temperature data after analog-to-digital conversion and compares the real-time data with the preset thresholds. If the collector voltage is higher or lower than the normal range, it indicates that there may be an overvoltage or undervoltage fault. If the on-current exceeds the set upper limit, it means that there may be an overcurrent. If the operating temperature reaches or exceeds the allowable upper limit, it indicates that the module temperature is too high. Once one or more parameters are detected as abnormal, the detection chip 3 determines that the IGBT module 1 is in an abnormal operating state.

[0051] When the detection chip 3 determines that the IGBT module 1 is abnormal, its output pin outputs a control signal. On the one hand, it outputs a PWM signal to the first terminal of indicator lights L1 to L5. The PWM signal causes indicator lights L1 to L5 to flash, visually displaying the fault type or severity with different colors or flashing frequencies. On the other hand, the output pin of the detection chip 3 inputs a signal to the base of the switching transistor Q2 through resistor R22. When the base is low, the switching transistor Q2 is turned on. At this time, the power supply VCC supplies power to the buzzer BL through the switching transistor Q2 and resistor R24. The buzzer BL emits an audible alarm, realizing the sound and light alarm function and promptly reminding the operator that the module has malfunctioned.

[0052] The detection chip 3 transmits the collected operating data and fault information of the IGBT module 1 to the display module 5 and the communication module 6 via a signal connection. If the communication module 6 uses an LED digital tube, LCD screen, or OLED screen, it can display the current operating parameters of the IGBT module 1 in real time, such as collector voltage, on-state current, and operating temperature, making it convenient for operators to check the equipment's operating status on-site. If the communication module 6 uses a 4G module, Bluetooth module, or Wi-Fi module, it can remotely transmit data to the monitoring center or other terminal devices, facilitating remote monitoring and analysis by technicians, enabling them to take timely measures to handle faults and ensure stable system operation.

[0053] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. A fault detection and alarm circuit for an IGBT module, comprising an IGBT module (1), a detection module (2), a detection chip (3), and an alarm module (4), characterized in that: The detection module (2) includes a voltage acquisition unit (20), a current acquisition unit (21), and a temperature acquisition unit (22). The voltage acquisition unit (20) is used to detect the collector voltage of the IGBT module (1). The current acquisition unit (21) is used to detect the on-current of the IGBT module (1). The temperature acquisition unit (22) is used to detect the operating temperature of the IGBT module (1). The output terminals of the voltage acquisition unit (20), the current acquisition unit (21), and the temperature acquisition unit (22) are all connected to the input pins of the detection chip (3). The output pins of the detection chip (3) are connected to the alarm module (4). When the detection chip (3) detects an abnormality in the IGBT module (1), the detection chip (3) controls the alarm module (4) to activate the audible and visual alarm.

2. The fault detection alarm circuit for the IGBT module according to claim 1, characterized in that: The voltage acquisition unit (20) includes resistors R1, R2, R3, switch Q1, R4, capacitor C1, resistors R5, R6 and operational amplifier U1, and switch Q1 is an NMOS transistor. The first end of resistor R1 is connected to the gate of the IGBT module (1), the second end of resistor R1 is connected to the first end of resistor R2, the second end of resistor R2 is grounded, the drain of switch Q1 is connected to the collector of the IGBT module (1), the gate of switch Q1 is connected to the second end of resistor R1, the source of switch Q1 is connected to the first end of resistor R4, the second end of resistor R4 is connected to the non-inverting input of operational amplifier U1, the first end of resistor R3 is connected to the first end of resistor R4, the second end of resistor R3 is grounded, the first end of capacitor C1 is connected to the second end of resistor R4, the second end of capacitor C1 is grounded, the first end of resistor R5 is grounded, the second end of resistor R5 is connected to the inverting input of operational amplifier U1, the first end of resistor R6 is connected to the inverting input of operational amplifier U1, the second end of resistor R6 is connected to the output of operational amplifier U1, and the output of operational amplifier U1 is connected to the analog-to-digital conversion pin of the detection chip (3).

3. The fault detection alarm circuit for the IGBT module according to claim 1, characterized in that: The current acquisition unit (21) includes resistors R7, R8, R9, R10, R11 and operational amplifier U2; The first end of resistor R7 is connected to the emitter of the IGBT module (1), and the second end of resistor R7 is grounded. The first end of resistor R8 is connected to the first end of resistor R7, and the second end of resistor R8 is connected to the inverting input of operational amplifier U2. The first end of resistor R9 is connected to the second end of resistor R7, and the second end of resistor R9 is connected to the non-inverting input of operational amplifier U2. The first end of resistor R10 is connected to the inverting input of operational amplifier U2, and the second end of resistor R10 is connected to the output of operational amplifier U2. The first end of resistor R11 is connected to the non-inverting input of operational amplifier U2, and the second end of resistor R11 is grounded. The output of operational amplifier U2 is connected to the analog-to-digital conversion pin of the detection chip (3).

4. The fault detection alarm circuit for the IGBT module according to claim 1, characterized in that: The temperature acquisition unit (22) includes resistors R12, R13, R14, thermistor RT, operational amplifier U3, resistors R15, R16, R17, operational amplifier U4, resistors R18, R19, R20, R21 and operational amplifier U5. The resistance values ​​of resistors R12, R13, R14 and thermistor RT are equal. The first terminal of resistor R12 is connected to the power supply VCC, the second terminal of resistor R12 is connected to the first terminal of resistor R14, the second terminal of resistor R14 is grounded, the first terminal of resistor R13 is connected to the power supply VCC, the second terminal of resistor R13 is connected to the first terminal of the thermistor RT, the second terminal of the thermistor RT is grounded. Operational amplifier U3's non-inverting input is connected to the second terminal of resistor R12; the first terminal of resistor R15 is connected to the inverting input of operational amplifier U3; the second terminal of resistor R15 is connected to the inverting input of operational amplifier U4; the non-inverting input of operational amplifier U4 is connected to the second terminal of resistor R13; the first terminal of resistor R16 is connected to the inverting input of operational amplifier U3; the second terminal of resistor R16 is connected to the output of operational amplifier U3; the first terminal of resistor R17 is connected to the inverting input of operational amplifier U4; the second terminal of resistor R17 is connected to the output of operational amplifier U4; the first terminal of resistor R18... The first end of resistor R18 is connected to the output of operational amplifier U3, the second end of resistor R18 is connected to the inverting input of operational amplifier U5, the first end of resistor R19 is connected to the output of operational amplifier U4, the second end of resistor R19 is connected to the non-inverting input of operational amplifier U5, the first end of resistor R20 is connected to the inverting input of operational amplifier U5, the second end of resistor R20 is connected to the output of operational amplifier U5, the first end of resistor R21 is connected to the non-inverting input of operational amplifier U5, the second end of resistor R21 is grounded, and the output of operational amplifier U5 is connected to the analog-to-digital conversion pin of the detection chip (3).

5. The fault detection alarm circuit for the IGBT module according to claim 1, characterized in that: The alarm module (4) includes indicator lights L1, L2, L3, L4, L5, resistors R22 and R23, switch Q2, resistor R24 ​​and buzzer BL, and switch Q2 is a PNP transistor. The first ends of indicator lights L1, L2, L3, L4 and L5 are respectively connected to the output pins of the detection chip (3), and the second ends of indicator lights L1, L2, L3, L4 and L5 are all grounded. The detection chip (3) outputs PWM signals to control indicator lights L1, L2, L3, L4 and L5. The first end of resistor R22 is connected to the output pin of the detection chip (3), the second end of resistor R22 is connected to the base of switch Q2, the first end of resistor R23 is connected to power supply VCC, the second end of resistor R23 is connected to the base of switch Q2, the emitter of switch Q2 is connected to power supply VCC, the collector of switch Q2 is connected to the first end of resistor R24, the second end of resistor R24 ​​is connected to the first end of buzzer BL, and the second end of buzzer BL is grounded.

6. The fault detection alarm circuit for the IGBT module according to claim 1, characterized in that: It also includes a display module (5) and a communication module (6), both of which are connected to the detection chip (3) via signals.