A C-band power amplification module and a power amplification device

Abstract

The utility model discloses a kind of C-band power amplification module and power amplification device, the C-band power amplification module at least includes two external heat conductors, two interlayer heat conductors, two internal heat conductors, multiple power amplification modules.Simultaneously the technical scheme is constructed multilayer heat conduction structure by symmetrically arranged external heat conductor, interlayer heat conductor and internal heat conductor, cooperate the reasonable arrangement of multiple power amplification modules, so that the heat of multiple power amplification modules is conducted to outside through multilayer heat conduction structure, improve heat conduction efficiency;Especially the outside of external heat conductor is provided with inwardly recessed groove structure, significantly reduce module overall weight under the premise of not affecting heat dissipation performance, improve the compactness of module structure and integration, conducive to equipment lightweight design and application environment adaptability, with good heat balance performance and structural optimization effect.

Description

Technical Field

[0001] This utility model relates to the field of wireless communication technology, and in particular to a C-band power amplifier module and power amplifier device. Background Technology

[0002] C-band power amplifier modules are widely used in radar systems, satellite communications, wireless communication base stations, and other equipment to amplify high-frequency radio frequency signals. Existing power amplifier modules typically employ a multi-chip parallel or multi-stage amplification structure, with the chips mounted in multiple heat-conducting components. The heat generated during operation is conducted to the heat dissipation structure through heat conduction paths to ensure the stability of chip operation.

[0003] However, most power modules in related technologies, while ensuring thermal performance, often suffer from complex structures, large weights, and redundant volumes, resulting in material waste and hindering device miniaturization and integrated design. Therefore, how to optimize the structural layout and reduce the overall weight of the module while maintaining thermal conductivity has become an urgent technical problem to be solved in this field. Utility Model Content

[0004] The main objective of this invention is to provide a C-band power amplifier module and power amplifier device to at least solve the technical problems mentioned in the related art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A first aspect of this utility model provides a C-band power amplifier module, the C-band power amplifier module comprising:

[0007] Two external heat conductors are arranged symmetrically.

[0008] Two sandwich heat conductors are symmetrically arranged and located between the two external heat conductors;

[0009] Two internal heat conductors are symmetrically arranged and located between the two sandwich heat conductors;

[0010] Multiple power amplification modules are disposed inside the external heat conductor or on the internal heat conductor;

[0011] The bottom surface of at least one of the two external heat conductors, the two sandwich heat conductors, and the two internal heat conductors is used for thermal contact with the external heat dissipation structure, and the outer surfaces of the two external heat conductors form an inwardly recessed groove structure.

[0012] A second aspect of this utility model also provides a power amplification device, including a profile heat dissipation structure, a fan module, and a C-band power amplification module as described in the first aspect. The bottom of the C-band power amplification module is in thermal contact with the profile heat dissipation structure. The heat from the power amplification chip in the C-band power amplification module is conducted to the profile heat dissipation structure via two external heat conductors, two interlayer heat conductors, and two of the interlayer heat conductors. The fan module is used to dissipate heat from the profile heat dissipation structure.

[0013] This utility model discloses a C-band power amplifier module and power amplifier device. By constructing a multi-layer heat conduction structure through symmetrically arranged external heat conductors, sandwich heat conductors, and internal heat conductors, and in conjunction with the reasonable arrangement of multiple power amplifier modules, the heat generated by the multiple power amplifier modules is conducted to the outside through the multi-layer heat conduction structure, thereby improving heat conduction efficiency. In particular, the outer side of the external heat conductor is provided with an inwardly recessed groove structure, which significantly reduces the overall weight of the module without affecting the heat dissipation performance, improves the structural compactness and integration of the module, and is conducive to the lightweight design of the equipment and the adaptability of the application environment. It has good thermal balance performance and structural optimization effect. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 A three-dimensional schematic diagram of a C-band power amplifier module provided in an embodiment of this application;

[0016] Figure 2 for Figure 1 A three-dimensional schematic diagram after the external heat conductor on one side has been removed;

[0017] Figure 3 for Figure 1 A three-dimensional schematic diagram after the external heat conductor on one side has been removed;

[0018] Figure 4 A half-sectional schematic diagram of the C-band power amplifier module provided in an embodiment of this application;

[0019] Figure 5 for Figure 4 Top view;

[0020] Figure 6 A front view of a C-band power amplifier module provided in an embodiment of this application;

[0021] Figure 7 A three-dimensional schematic diagram of the power amplifier device provided in the embodiments of this application;

[0022] Figure 8 This is a schematic diagram showing the test results of the C-band power amplifier module provided in the embodiments of this application during actual testing.

[0023] Figure reference numerals: C-band power amplifier module 1, heat dissipation structure 2, fan module 3, two external heat conductors 11, 12; two sandwich heat conductors 21, 22; two internal heat conductors 31, 32; signal input channel, signal output channel 40, power amplifier module 50, slot structure 121, first gap 401, second gap 402, third gap 403, fourth gap 404, PCB assembly 501, power amplifier chip 502. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0025] It should be noted that related terms such as "first" and "second" can be used to describe various components, but these terms do not limit the component. These terms are only used to distinguish one component from another. For example, without departing from the scope of this utility model, the first component can be referred to as the second component, and the second component can similarly be referred to as the first component. The term "and / or" refers to any one or more combinations of related and descriptive terms.

[0026] Please refer to the following in order. Figures 1 to 7 This application provides a C-band power amplifier module 1, which includes at least two external heat conductors (11, 12), two sandwich heat conductors (21, 22), two internal heat conductors (31, 32), and multiple power amplifier modules 50. The components are described below:

[0027] Two external heat conductors (11, 12) are arranged horizontally or symmetrically along the width of the module on the outside of the C-band power amplifier module 1, forming the left and right side boundaries of the module respectively; in addition, the external heat conductors can be made of pure copper with good thermal conductivity, that is, pure copper heat conductors.

[0028] Two interlayer heat conductors (21, 22) are horizontally or symmetrically arranged between two external heat conductors (11, 12) along the width of the module, and at least a portion of them are in thermal contact with the two external heat conductors (11, 12) to achieve uniform heat conduction. In addition, the interlayer heat conductors can be made of aluminum (low density and light weight), i.e., aluminum heat conductors, to reduce the overall weight of the module.

[0029] Two internal heat conductors (31, 32) are horizontally or symmetrically arranged between two sandwich heat conductors (21, 22) along the width of the module, roughly located at the center of the C-band power amplifier module 1; and at least a portion of the internal heat conductor is in thermal contact with the two sandwich heat conductors (21, 22) to achieve uniform heat conduction; in addition, the internal heat conductor can be made of pure copper with good thermal conductivity, i.e., a pure copper heat conductor.

[0030] Multiple power amplifier modules 50 can have various functional configurations, serving as chip modules for performing step-by-step signal amplification, parallel amplification, bandgap amplification, or linearity compensation. These power amplifier modules 50 can be located inside an external heatsink or on an internal heatsink, and their specific positions can be arranged according to electrical and thermal design requirements.

[0031] Thus, the two external heat conductors (11, 12), the two sandwich heat conductors (21, 22), and the two internal heat conductors (31, 32) are stacked from the outside to the inside along the width direction of the C-band power amplifier module 1, forming a three-layer symmetrical heat conduction path, thereby achieving heat flow balance and structural stability. Furthermore, the bottom surface (or all bottom surfaces) of at least one of the aforementioned heat conductors is used to connect with the external profile-type heat dissipation structure 2. Figure 7 (As shown) thermal contact, so as to conduct heat to the external heat dissipation structure 2 and cooperate with the external fan module 3 for heat dissipation.

[0032] Among them, the outer surfaces of the two external heat conductors 11 and 12 are provided with inwardly recessed groove structures 121. By partially removing non-functional materials, the groove structure 121 can effectively reduce the weight of the power amplifier module without affecting the heat conduction path and structural strength, and increase the heat conduction area, thereby improving the lightweight level of the whole system.

[0033] As can be seen, the C-band power amplifier module of this application embodiment constructs a multi-layer heat conduction structure through symmetrically arranged external heat conductors, sandwich heat conductors, and internal heat conductors. With the reasonable arrangement of multiple power amplifier modules, the heat generated by multiple power amplifier modules is conducted to the outside through the multi-layer heat conduction structure, thereby improving heat conduction efficiency. In particular, the outer side of the external heat conductor is provided with an inwardly recessed groove structure, which significantly reduces the overall weight of the module without affecting the heat dissipation performance, improves the structural compactness and integration of the module, and is conducive to the lightweight design of the equipment and the adaptability of the application environment. It has good thermal balance performance and structural optimization effect.

[0034] It should be understood that radio frequency power amplifiers in the C-band frequency range are used to amplify radio frequency signals to meet system requirements for output power, coverage, or link budget. They are widely used in: satellite uplink terminals; transmitting units in radar systems; wireless communication base stations; microwave wireless transmission equipment, etc. The C-band typically refers to the frequency range of 4GHz to 8GHz (ITU allocation), but there may be slight differences in specific applications: Satellite communication: typically uses 3.7GHz to 4.2GHz (downlink) and 5.925GHz to 6.425GHz (uplink). Radar systems: commonly use the 4GHz to 8GHz range. 5G communication: sometimes also considers 3.3GHz to 4.2GHz as an "extended C-band".

[0035] In an optional embodiment of this application, two external heat conductors (11, 12), two sandwich heat conductors (21, 22) and two internal heat conductors (31, 32) are assembled together in a stacked structure to form a signal input channel and a signal output channel (40). The signal input channel and the signal output channel are used to connect with an external waveguide device to realize the effective import and export of signals.

[0036] Please return and refer to Figure 3 The power amplifier module 50 includes a PCB assembly 501 and a power amplifier chip 502.

[0037] The PCB assembly 501 provides electrical connection, radio frequency signal input / output and chip packaging carrier functions for the power amplifier chip 502, and also serves as a heat conduction intermediary structure to connect the heat conductor and the chip.

[0038] The power amplifier chip 502 is a high-frequency, high-power chip operating in the C-band. It can be fixed on the PCB assembly 501 by means of soldering, bonding, etc. A thermal conductive interface material (such as a thermal pad or thermal adhesive) is provided underneath it to enhance thermal coupling efficiency.

[0039] In an optional embodiment of this application, in the height direction of the C-band power amplifier module 1, the arrangement position of the power amplifier chip in the power amplifier module 50 is lower than the stepped end face of the groove structure 121 provided on the external heat conductor, that is, the actual arrangement position of the chip is located below the groove structure, ensuring that the groove weight reduction design does not interfere with the heat channel and chip packaging structure, thereby effectively balancing weight reduction and thermal management.

[0040] In an optional embodiment of this application, a positioning groove adapted to the PCB assembly is formed on the external heat conductor, and the PCB assembly of a portion of the multiple power amplifier modules (e.g., two power amplifier modules) is fixed within the positioning groove. Similarly, a positioning groove adapted to the PCB assembly is formed on the internal heat conductor, and the PCB assembly of a portion of the multiple power amplifier modules (e.g., two other power amplifier modules) is fixed within the positioning groove.

[0041] In addition, gaps are formed between the external heat conductor, the sandwich heat conductor, and the internal heat conductor. These gaps provide space for the power amplifier module and also serve as part of the signal input and signal output channels. For example, these gaps may further include a first gap 401, a second gap 402, a third gap 403, and a fourth gap 404.

[0042] Please return and refer to Figure 4 The number of power amplifier modules 50 can be four. Each power amplifier module 50 is located in a different gap; for example, the four power amplifier modules are located in the first gap 401, the second gap 402, the third gap 403, and the fourth gap 404, respectively. This embodiment uses a separate matching design of one gap with one power amplifier module, so that the heat of each power amplifier chip is mainly conducted to the external profile-type heat dissipation structure 2 through a corresponding external heat conductor or an internal heat conductor, improving the heat conduction effect and avoiding interference.

[0043] Please see Figure 7 This application embodiment also provides a power amplification device, including a profile heat dissipation structure 2, a fan module 3 and a C-band power amplification module 1. The bottom of the C-band power amplification module 1 is in thermal contact with the profile heat dissipation structure 2, and the fan module 3 is used to dissipate heat from the profile heat dissipation structure 2.

[0044] In the implementation of this embodiment, a reliable thermal contact is formed between the bottom of the C-band power amplifier module 1 and the heat dissipation structure 2. The heat generated by the chips inside each module is conducted through corresponding external and internal heat conductors, ultimately leading to rapid heat transfer to the heat dissipation structure 2. Finally, the airflow generated by the fan module 3 carries away the heat adhering to the heat dissipation structure 2, thereby effectively cooling the entire power amplifier module. This structure features good heat dissipation efficiency, a controllable airflow path, and excellent thermal stability, making it suitable for continuous high-power operation scenarios.

[0045] As can be seen, the C-band power amplifier module and power amplifier device of this application embodiment construct a multi-layer heat conduction structure through symmetrically arranged external heat conductors, sandwich heat conductors and internal heat conductors. With the reasonable arrangement of multiple power amplifier modules, the heat generated by multiple power amplifier modules is conducted to the outside through the multi-layer heat conduction structure, thereby improving the heat conduction efficiency. In particular, the outer side of the external heat conductor is provided with an inwardly recessed groove structure, which significantly reduces the overall weight of the module without affecting the heat dissipation performance, improves the structural compactness and integration of the module, is conducive to the lightweight design of the equipment and the adaptability of the application environment, and has good thermal balance performance and structural optimization effect.

[0046] Please see Figure 8 And as shown in Table 1 below, when the C-band power amplifier module of this application and several conventional solutions were tested under the same conditions, the temperature and overall weight of different chips in each solution were as follows:

[0047] Table 1

[0048]

[0049] Based on the comparative analysis of chip temperature and overall weight between the conventional solutions and the embodiments of this application in Table 1, it can be seen that:

[0050] Compared to the conventional solution 1 (which typically has all structural components made of pure copper and weighs approximately 3 kg): the chip temperature is similar, while the module in this embodiment is 0.64 kg lighter than the conventional solution 1.

[0051] Compared with the conventional solution 2 (all structural components are made of pure copper, and some structures have through slots on both sides): Although the module of this application embodiment is 0.36kg heavier than the module of conventional solution 2, the chip's maximum temperature is improved by 1.5℃ and the minimum temperature is improved by 4.6℃.

[0052] Compared with the conventional scheme three (all structural components are made of pure copper, some structures have weight reduction design on both sides, and steps are left on both sides of the module): the module of this application embodiment is 0.32kg lighter than the conventional scheme three, and the chip temperature of the module of this application embodiment is no more than 1°C higher than the chip temperature in the conventional scheme three.

[0053] In summary, the C-band power amplifier module of this application embodiment can significantly improve chip temperature while ensuring a lightweight module.

[0054] The specific embodiments of the utility model have been described in detail above, but they are only examples, and the utility model is not limited to the specific embodiments described above. For those skilled in the art, any equivalent modifications or substitutions to the utility model are also within the scope of the utility model. Therefore, all equivalent transformations, modifications, and improvements made without departing from the spirit and principles of the utility model should be covered within the scope of the utility model.

Claims

1. A C-band power amplifier module, characterized in that, The C-band power amplifier module includes: Two external heat conductors are arranged symmetrically. Two sandwich heat conductors are symmetrically arranged and located between the two external heat conductors; Two internal heat conductors are symmetrically arranged and located between the two sandwich heat conductors; Multiple power amplification modules are disposed inside the external heat conductor or on the internal heat conductor; The bottom surface of at least one of the two external heat conductors, the two sandwich heat conductors, and the two internal heat conductors is used for thermal contact with the external heat dissipation structure, and the outer surfaces of the two external heat conductors form an inwardly recessed groove structure.

2. The C-band power amplifier module as described in claim 1, characterized in that, The two external heat conductors, the two interlayer heat conductors, and the two internal heat conductors form a signal input channel and a signal output channel for connection with an external waveguide device.

3. The C-band power amplifier module as described in claim 1, characterized in that, The external heat conductor is made of pure copper.

4. The C-band power amplifier module as described in claim 3, characterized in that, The internal heat conductor is made of pure copper.

5. The C-band power amplifier module as described in claim 4, characterized in that, The power amplifier module includes a PCB assembly and a power amplifier chip; The power amplifier chip is mounted on the PCB assembly.

6. The C-band power amplifier module as described in claim 5, characterized in that, In the height direction of the C-band power amplifier module, the position of the power amplifier chip is lower than the stepped end face of the groove structure.

7. The C-band power amplifier module as described in claim 5, characterized in that, The interlayer heat conductor is an aluminum heat conductor.

8. The C-band power amplifier module as described in claim 5, characterized in that, A positioning groove adapted to the PCB assembly is formed on the external heat conductor; The PCB assembly of a portion of the power amplifier modules is fixed within the positioning slot.

9. The C-band power amplifier module as described in claim 5, characterized in that, A positioning groove adapted to the PCB assembly is formed on the internal heat conductor; The PCB assembly of a portion of the power amplifier modules is fixed within the positioning slot.

10. A power amplifier device, characterized in that, Includes a profile heat dissipation structure, a fan module, and a C-band power amplifier module as described in any one of claims 1 to 9; The bottom of the C-band power amplifier module is in thermal contact with the heat dissipation structure of the profile. The heat from the power amplifier chip in the C-band power amplifier module is conducted to the heat dissipation structure of the profile through two external heat conductors, two interlayer heat conductors, and two interlayer heat conductors. The fan module is used to dissipate heat from the heat dissipation structure of the profile.

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