A metal oxide semiconductor field effect transistor pin forming device

Abstract

This utility model discloses a metal-oxide-semiconductor field-effect transistor (MOSFET) pin forming device, including a MOSFET placement stage, a pin board, a limiting plate, and a forming plate. The upper surface of the MOSFET placement stage holds the lower surface of the MOSFET, and the MOSFET placement stage and the side of the MOSFET are in contact, so that the root position of the MOSFET pin is flush with the side of the pin board, ensuring that the starting position of the MOSFET pin forming remains unchanged and improving the pin forming accuracy. The forming plate has a rounded chamfer on the lower side of one side and a right angle on the upper side of one side, and the forming plate can rotate within 90°, ensuring that the MOSFET can be placed in when the forming plate is horizontal and removed when the forming plate is vertical. This allows for the rapid forming of multiple MOSFET pins from a horizontal to a vertical state simultaneously, simplifying the operation and improving the pin forming efficiency of the MOSFET.

Description

Technical Field

[0001] This utility model protective cover relates to the technical field, specifically to a pin forming device for a metal oxide semiconductor field-effect transistor. Background Technology

[0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) are extremely important in the aerospace field. They can work stably in the complex space environment, reducing the risk of aerospace equipment failure due to electronic component malfunctions; they can amplify weak signals and perform efficient signal conversion; and they can optimize energy distribution, making rational use of limited energy.

[0003] Before installation, MOSFETs need to be shaped according to the distance between the pins on the corresponding circuit board. Currently, the MOSFET shaping method is manual shaping. This shaping method cannot guarantee that the shaping is done in one go, and it cannot achieve a 100% perfect fit between the shaped device and the corresponding package on the circuit board. Moreover, manual shaping is time-consuming and labor-intensive. When the device is manually shaped, the root of the device pins may be subjected to stress, which may damage the MOSFET pins and cause the subsequent electrical performance requirements to be unmet.

[0004] To overcome the problems arising during the pin forming process of MOSFETs, a pin forming device for metal-oxide-semiconductor field-effect transistors was developed. Using this device saves time and effort, allows for adjustable pin forming lengths, and ensures that the forming length of each MOSFET pin remains consistent. It also avoids damage to the root of the MOSFET pins during pin forming, thereby improving the pin forming accuracy and efficiency. Utility Model Content

[0005] The purpose of this invention is to address the shortcomings of existing technologies and provide a pin forming device for metal oxide semiconductor field-effect transistors.

[0006] To achieve the above objectives, this utility model provides a metal-oxide-semiconductor field-effect transistor (MOSFET) pin forming device, including a MOSFET placement stage, a pin plate, a limiting plate, and a forming plate. The sides of the pin plate are fixedly connected to both sides of the MOSFET placement stage by screws. The upper surfaces of the pin plate are fixedly connected to both sides of the limiting plate by screws. The center of the side plate is fixedly connected to the side of the limiting plate by screws. One end of the forming plate is rotatably connected to the lower part of the side plate via a shaft. The side of the forming handle is fixedly connected to the side of the forming plate by screws.

[0007] Preferably, the upper surface of the MOS transistor placement platform is placed with the lower surface of the MOS transistor, and the MOS transistor placement platform and the side of the MOS transistor are in contact. The pins of the MOS transistor are arranged in the pin forming groove space. The side edge of the pin forming groove is provided with rounded corners of the pin side and the side edge of the pin board is provided with forming cone corners.

[0008] Preferably, the molding plate has a rounded chamfer on the lower side of one side and a right angle on the upper side of one side, and the molding plate can rotate within 90°.

[0009] Preferably, the thickness of the thickening plate between the MOS transistor placement stage and the lead plate can be increased or decreased to form MOS transistors with different lead lengths.

[0010] Preferably, the pin board has a pin forming groove on its upper part. The pin board is replaced according to the pin diameter of the MOS transistor, thereby selecting the pin forming groove corresponding to the pin diameter of the MOS transistor.

[0011] Compared with the prior art, the technical solution proposed in this application has the following beneficial effects: By using a MOSFET placement platform and the side of the MOSFET in contact, and by appropriately pressing the upper surface of the MOSFET with a finger, the root surface of the MOSFET pin is made flush with the side of the pinboard, ensuring that the starting position of the MOSFET pin forming remains unchanged, thus improving the pin forming accuracy. By placing the MOSFET pin within the pin forming groove space, stress concentration at the root of the MOSFET pin is eliminated, preventing damage to the MOSFET itself during pin forming. The rounded corners on the side edges below the pin forming groove ensure that the pins are not scratched during forming. The forming cone angle on the side edges below the pinboard prevents the pins from being scratched. The forming angle is less than 90°; the forming plate has a rounded chamfer on the lower side of one side and a right angle on the upper side of the forming plate, and the forming plate can rotate within 90°, ensuring that the MOSFET can be placed when the forming plate is horizontal and removed when the forming plate is vertical. This allows for the rapid forming of multiple MOSFET pins from a horizontal to a vertical position simultaneously, simplifying operation and improving the efficiency of MOSFET pin forming; by increasing or decreasing the thickness of the thickening plate between the MOSFET placement stage and the pin board, different MOSFET pin lengths can be formed; by changing the size of the pin forming slot on the upper part of the pin board, different MOSFET pin diameters can be formed, making it widely applicable and easy to disassemble and replace. Attached Figure Description

[0012] Other features, objects, and advantages of this invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the overall structure of the metal-oxide-semiconductor field-effect transistor lead forming device of this utility model; Figure 2 This is a schematic diagram of the overall structure of the metal-oxide-semiconductor field-effect transistor pin forming device of this utility model from another angle. Figure 3 A schematic diagram of the overall structure of the metal-oxide-semiconductor field-effect transistor pin forming device of this utility model is provided. Figure 4 This is a schematic diagram of the overall structure of the metal-oxide-semiconductor field-effect transistor pin forming device of this utility model, viewed from another angle. Figure 5 This is a schematic diagram of the overall structure of the metal-oxide-semiconductor field-effect transistor pin forming device of this utility model after product forming. Figure 6 This is a half-sectional view of the metal-oxide-semiconductor field-effect transistor pin forming device of the present invention after product forming. Figure 7 A schematic diagram of the overall pin forming device of the present invention after adding pin forming length; Figure 8 A schematic diagram showing the removal of the MOS transistor after adding the pin forming length to the metal-oxide-semiconductor field-effect transistor pin forming device of this utility model; In the diagram: 10. MOSFET placement platform, 20. Pin board, 21. Pin forming groove, 22. Pin side rounded corner, 23. Forming cone angle, 30. Limiting plate, 40. Side plate, 50. Forming plate, 51. Forming right angle, 60. Forming handle, 70. Shaft, 80. Screw, 90. MOSFET, 91. MOSFET pin, 100. Thickening plate. Detailed Implementation

[0013] The technical solutions in the embodiments of this utility model will be clearly and completely described and discussed below with reference to the accompanying drawings. Obviously, what is described here is only a part of the examples of this utility model, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without creative effort are within the protection scope of this utility model.

[0014] It should be noted that when a component is described as "fixed to" another component, it can be directly on the other component or may have a component in between. When a component is considered "connected to" another component, it can be directly connected to the other component or may have a component in between. When a component is considered "set on" another component, it can be directly set on the other component or may have a component in between. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0015] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0016] Please see Figures 1 to 8 This utility model provides a technical solution: a metal-oxide-semiconductor field-effect transistor (MOSFET) pin forming device, comprising a MOSFET placement stage 10, a pin plate 20, a limiting plate 30, and a forming plate 50, characterized in that: the sides of the pin plate 20 are fixedly connected to both sides of the MOSFET placement stage 10 by screws 80; the upper surfaces of the pin plate 20 are fixedly connected to both sides of the limiting plate 30 by screws 80; the center of the side plate 40 is fixedly connected to the side of the limiting plate 30 by screws 80; one end of the forming plate 50 is rotatably connected to the lower part of the side plate 40 by a shaft 70; and the side of the forming handle 60 is fixedly connected to the side of the forming plate 50 by screws 80.

[0017] Furthermore, the lower surface of the MOS transistor 90 is placed on the upper surface of the MOS transistor placement platform 10, and the sides of the MOS transistor 90 are in contact with each other. The upper surface of the MOS transistor 90 is pressed appropriately with a finger so that the root position of the MOS transistor pin 91 is flush with the side of the pin plate 20, ensuring that the starting position of the MOS transistor pin 91 remains unchanged and improving the forming accuracy of the MOS transistor pin 91. The MOS transistor pin 91 is placed in the space of the pin forming groove 21 to eliminate stress concentration at the root of the MOS transistor pin 91 and avoid damage to the MOS transistor pin 91 itself during forming. The side edge of the pin forming groove 21 is provided with a rounded corner 22 to ensure that the pin is not scratched during forming. The side edge of the pin plate 20 is provided with a forming cone angle 23 to prevent the pin forming angle from being less than 90°.

[0018] Furthermore, the molding plate 50 has a rounded chamfer on the lower side of one side and a right angle 51 on the upper side of one side. The molding plate 50 can rotate within 90°, ensuring that the MOS transistor 90 can be inserted when the molding plate 50 is horizontal and removed when the molding plate 50 is vertical. This allows for the rapid simultaneous molding of multiple pins of the MOS transistor 90 from a horizontal to a vertical state, simplifying the operation and improving the molding efficiency of the MOS transistor pins 91.

[0019] Furthermore, the thickness of the thickening plate 100 can be increased or decreased between the MOS transistor placement stage 10 and the lead plate 20, thereby forming MOS transistors 90 with different lead lengths, which has a wide range of applications and is convenient to disassemble and replace.

[0020] Furthermore, the pin board 20 is provided with a pin forming groove 21 on its upper part. The pin board 20 can be replaced according to the diameter of the MOS transistor pin 91, thereby selecting the pin forming groove 21 corresponding to the diameter of the MOS transistor pin 91. It has a wide range of applications and is easy to disassemble and replace.

[0021] Working principle: Before actual operation, first select the pin plate 20 corresponding to the pin forming groove 21 according to the required diameter of the MOS transistor pin 91, and then increase or decrease the thickness of the thickening plate 100 between the MOS transistor placement stage 10 and the pin plate 20 according to the required length of the formed pin.

[0022] In actual operation, place the MOSFET 90 on the upper surface of the MOSFET placement platform 10, with the MOSFET 90 in contact with both sides of the platform. At this time, the MOSFET lead 91 passes through the lead forming groove 21 to the bottom of the forming plate 50. Press the upper surface of the MOSFET 90 with appropriate pressure with your left hand to prevent the MOSFET from moving up and down, back and forth, or left and right. Slowly press the forming handle 60 clockwise with your right hand until the MOSFET lead 91 touches the lead plate 20, then stop pressing with both hands. Raise the forming handle 60 counterclockwise to a horizontal position, and slowly move it horizontally from the lead plate 20 to remove the formed MOSFET 90. The lead forming of the MOSFET 90 is now complete.

[0023] The specific embodiments of this utility model have been described above. It should be understood that this utility model is not limited to the specific embodiments described above, nor to combinations thereof. Those skilled in the art can make various changes, modifications, or combinations within the scope of the claims, which do not affect the substantive content of this utility model. Unless otherwise specified, the embodiments and features described in this application can be arbitrarily combined with each other.

Claims

1. A lead forming apparatus for a metal-oxide-semiconductor field-effect transistor, comprising a MOSFET placement stage, a lead plate, a limiting plate, and a forming plate, characterized in that: The sides of the MOS transistor placement platform are fixedly connected to the sides of the pinboard by screws. The sides of the limiting plate are fixedly connected to the upper surface of the pinboard by screws. The center of the side plate is fixedly connected to the side of the limiting plate by screws. One end of the molding plate is rotatably connected to the lower part of the side plate by a shaft. The side of the molding handle is fixedly connected to the side of the molding plate by screws.

2. The metal-oxide-semiconductor field-effect transistor lead forming apparatus according to claim 1, characterized in that, The upper surface of the MOS transistor placement platform is placed on the lower surface of the MOS transistor, and the MOS transistor placement platform and the side of the MOS transistor are in contact. The pins of the MOS transistor are set in the pin forming groove space. The side edge of the pin forming groove is provided with rounded corners of the pin side. The side edge of the pin board is provided with forming cone corners.

3. The lead forming apparatus for a metal-oxide-semiconductor field-effect transistor according to claim 1, characterized in that: The molding plate has a rounded chamfer on the lower side of one side and a right angle on the upper side of the other side, and the molding plate can rotate within 90°.

4. The lead forming apparatus for a metal-oxide-semiconductor field-effect transistor according to claim 2, characterized in that: The thickness of the thickening plate between the MOS transistor placement stage and the lead plate can be increased or decreased to form MOS transistors with different lead lengths.

5. The lead forming apparatus for a metal-oxide-semiconductor field-effect transistor according to claim 2, characterized in that: The pin board is provided with a pin forming groove on its upper part. The pin board is replaced according to the pin diameter of the MOS transistor, thereby selecting the pin forming groove corresponding to the pin diameter of the MOS transistor.

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