Heating circuit of a base station and heating device of a base station
Patent Information
- Application Number
- CN202521775005.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-19
- Publication Date
- 2026-08-18
- Estimated Expiration
- 2035-08-19
AI Technical Summary
[0004]有鉴于此，本申请实施例提供一种基站的加热电路及基站的加热设备，以解决现有技术中的基站的成本较高的技术问题
[0017]本申请实施例提供的基站的加热电路包括功率电阻、第一电阻、场效应管以及基站的控制器；功率电阻的第一端、第一电阻的第一端与电源共接，功率电阻的第二端与场效应管的漏极连接，第一电阻的第二端、控制器的控制端以及场效应管的栅极共接，场效应管的源极接地；加热电路用于：当基站的温度小于预设温度阈值时，通过功率电阻为基站加热，当基站的温度大于或等于预设温度阈值时，控制功率电阻停止为基站加热。通过本申请的加热电路能够在低温环境下为基站加热，使得基站能够正常启动，因此无需选用低温特性较好的器件和/或芯片来构成基站，降低了基站的成本。
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Figure CN224653645U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of base station technology, and in particular relates to a heating circuit and heating equipment for a base station. Background Technology
[0002] Base stations, as crucial equipment for mobile communications, need to operate under various environmental conditions. However, when base stations are in low-temperature environments, various components and / or chips within the base station may malfunction, potentially causing the base station to fail to start.
[0003] To ensure that base stations can start normally even in low-temperature environments, existing technologies typically address the above issues through two methods. One method is to use devices and / or chips with good low-temperature characteristics to construct the base station, but these devices and / or chips are expensive. The other method is to install high-power heating equipment in the base station, but this also results in high costs for existing base stations. Summary of the Invention
[0004] In view of this, embodiments of this application provide a heating circuit and a heating device for a base station to solve the technical problem of high cost of base stations in the prior art.
[0005] In a first aspect, embodiments of this application provide a heating circuit for a base station. The heating circuit includes a power resistor, a first resistor, a field-effect transistor (FET), and a base station controller. A first terminal of the power resistor and a first terminal of the first resistor are connected to a power supply. A second terminal of the power resistor is connected to the drain of the FET. The second terminal of the first resistor, a control terminal of the controller, and the gate of the FET are all connected together. The source of the FET is grounded. The heating circuit is used for:
[0006] When the temperature of the base station is lower than a preset temperature threshold, the base station is heated by the power resistor. When the temperature of the base station is greater than or equal to the preset temperature threshold, the power resistor is controlled to stop heating the base station.
[0007] Optionally, the heating circuit further includes a transistor; the base of the transistor is connected to the control terminal of the controller, the collector of the transistor is connected to the second terminal of the first resistor and the gate of the field-effect transistor, and the emitter of the transistor is grounded.
[0008] Optionally, the heating circuit further includes a second resistor; a first end of the second resistor is connected to the control terminal of the controller, and a second end of the second resistor is connected to the base of the transistor.
[0009] Optionally, the transistor is an NPN transistor.
[0010] Optionally, the field-effect transistor is an NMOS transistor.
[0011] Optionally, the source of the field-effect transistor includes a first source pin, a second source pin, and a third source pin connected in parallel.
[0012] Optionally, the power resistor is positioned at a distance less than a preset distance threshold from the base station.
[0013] Optionally, the control terminal of the controller is the controller's general-purpose input / output port.
[0014] Secondly, embodiments of this application provide a heating device for a base station, the heating device comprising a plurality of heating circuits as described in any of the first aspects.
[0015] Optionally, the power resistor in any heating circuit of the heating device may be set at any of the following locations: a location where the distance from the base station controller is less than a preset distance threshold, a location where the distance from the base station's synchronous dynamic random access memory is less than the preset distance threshold, and a location where the distance from the base station's flash memory is less than the preset distance threshold.
[0016] The heating circuit and heating device for the base station provided in this application embodiment have the following technical effects:
[0017] The heating circuit for a base station provided in this application includes a power resistor, a first resistor, a field-effect transistor (FET), and a base station controller. The first terminal of the power resistor is connected to a power supply, the second terminal of the power resistor is connected to the drain of the FET, the second terminal of the first resistor, the control terminal of the controller, and the gate of the FET are all connected together, and the source of the FET is grounded. The heating circuit is used to: heat the base station through the power resistor when the base station temperature is below a preset temperature threshold; and control the power resistor to stop heating the base station when the base station temperature is greater than or equal to the preset temperature threshold. This heating circuit can heat the base station in low-temperature environments, enabling the base station to start normally. Therefore, it eliminates the need to select devices and / or chips with good low-temperature characteristics to construct the base station, reducing the cost of the base station. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1This is a schematic diagram of the structure of a heating circuit for a base station provided in an embodiment of this application;
[0020] Figure 2 A schematic diagram of the structure of a heating circuit for a base station is provided for another embodiment of this application;
[0021] Figure 3 A schematic diagram of the structure of a heating circuit for a base station provided in another embodiment of this application;
[0022] Figure 4 This is a schematic diagram of the structure of a heating device for a base station provided in an embodiment of this application. Detailed Implementation
[0023] It should be noted that the terminology used in the embodiments of this application is only for explaining specific embodiments of this application and is not intended to limit this application. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more, "at least one" or "one or more" means one, two or more. The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.
[0024] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.
[0025] This application first provides a heating circuit for a base station.
[0026] Please see Figure 1 , Figure 1 This is a schematic diagram of the heating circuit of a base station provided in an embodiment of this application.
[0027] like Figure 1 As shown, the heating circuit of the base station provided in this application embodiment includes a power resistor R1, a first resistor R2, a field-effect transistor MOS1, and a base station controller NPU.
[0028] Among them, the first end of power resistor R1 and the first end of first resistor R2 are connected to the power supply. The second end of power resistor R1 is connected to the drain of field-effect transistor MOS1. The second end of first resistor R2, the control terminal of the base station controller NPU, and the gate of field-effect transistor MOS1 are connected together. The source of field-effect transistor MOS1 is grounded.
[0029] Among them, the field-effect transistor MOS1 can be an NMOS transistor.
[0030] In practical applications, since the greater the heating power of the power resistor R1 during the heating process, the greater the current through the power resistor R1, a high-current NMOS transistor can be selected as the field-effect transistor MOS1 to prevent the field-effect transistor MOS1 from being damaged due to excessive current, thereby improving the reliability of the base station heating circuit.
[0031] The source of the field-effect transistor MOS1 includes a first source pin, a second source pin, and a third source pin connected in parallel.
[0032] One of the purposes of setting the first, second, and third source pins connected in parallel at the source of the MOSFET is to shunt the source current of the MOSFET by connecting the first, second, and third source pins in parallel. This can prevent the source current of the MOSFET from becoming too large and causing damage to the MOSFET, thereby improving the reliability of the heating circuit of the base station.
[0033] The power supply can be the output voltage of the base station.
[0034] The power resistor R1 is used to heat the base station. In one possible implementation, the power resistor R1 is set at a distance from the base station that is less than a preset distance threshold, so that the power resistor R1 can achieve the function of heating the base station.
[0035] Specifically, the reason why base stations cannot start normally in low-temperature environments is mainly because devices such as the base station's controller NPU, the base station's synchronous dynamic random access memory (Data Rate SDRAM, DDR), and the base station's flash memory (flsah) cannot start normally in low-temperature environments.
[0036] Based on this, in practical applications, the power resistor R1 can be set at any of the following locations: a location where the distance from the base station controller is less than a preset distance threshold, a location where the distance from the base station's synchronous dynamic random access memory is less than the preset distance threshold, and a location where the distance from the base station's flash memory is less than the preset distance threshold.
[0037] By setting the power resistor R1 in the above position, the power resistor R1 can heat the base station's controller NPU, the base station's synchronous dynamic random access memory (Data Rate SDRAM, DDR), and the base station's flash memory (flsah), thereby enabling the base station to start normally even in low-temperature environments.
[0038] In practical applications, the value of the preset distance threshold can be set according to actual needs, and there is no limitation here.
[0039] In practical applications, a resistor with a volume smaller than a preset volume threshold and a power higher than a preset power threshold can be selected as the power resistor, thereby reducing the volume of the base station's heating circuit and improving its performance.
[0040] In practical applications, the values of the preset volume threshold and the preset power threshold can be set according to actual needs, and there are no restrictions here.
[0041] The control terminal of the controller NPU can be the controller's general purpose input / output (GPIO) port.
[0042] The base station's NPU controller is used to output a low level through the control terminal of the NPU after the base station is started.
[0043] The heating circuit of the base station provided in this application embodiment can heat the base station through the power resistor R1 when the temperature of the base station is lower than the preset temperature threshold, and control the power resistor R1 to stop heating the base station when the temperature of the base station is greater than or equal to the preset temperature threshold.
[0044] The preset temperature threshold can be the temperature threshold for base station activation. When the temperature is lower than the preset temperature threshold, the base station will not activate; when the temperature is greater than or equal to the preset temperature threshold, the base station will activate.
[0045] In practical applications, the value of the preset temperature threshold can be set according to actual needs, and there is no limitation here.
[0046] The following combination Figure 1 The working principle of the heating circuit of the base station provided in the embodiments of this application will be described in detail below:
[0047] First, the working principle under low-temperature conditions is as follows:
[0048] Under low temperature conditions, after the heating circuit of the base station is powered on, the gate voltage of the field-effect transistor MOS1 is pulled up to the power supply voltage. Therefore, the VGS (voltage difference between the gate and the source) of the field-effect transistor MOS1 at the current moment is the power supply voltage. Thus, the VGS of the field-effect transistor MOS1 is greater than 0, which satisfies the condition for the field-effect transistor MOS1 to conduct. Therefore, the field-effect transistor MOS1 is turned on.
[0049] After the field-effect transistor MOS1 is turned on, the power resistor R1 starts to work, that is, the power resistor R1 starts to heat the base station.
[0050] After heating for a certain period of time, the base station's temperature exceeds the preset temperature threshold, meeting the base station's startup conditions, and the base station begins to start. After the base station starts, the base station's controller NPU outputs a low level through the controller NPU's control terminal, pulling the gate voltage of the field-effect transistor MOS1 low (close to ground). Therefore, at the current moment, the VGS (voltage difference between the gate and source) of the field-effect transistor MOS1 is approximately equal to 0, which does not meet the condition for the field-effect transistor MOS1 to conduct, so the field-effect transistor MOS1 does not conduct.
[0051] After the field-effect transistor MOS1 is not turned on, the power resistor R1 stops working, that is, the power resistor R1 stops heating the base station.
[0052] Second, the working principle under non-low temperature conditions is as follows:
[0053] Under non-low temperature conditions, after the heating circuit of the base station is powered on, the gate voltage of the field-effect transistor MOS1 is pulled up to the power supply voltage. Therefore, the VGS (voltage difference between the gate and the source) of the field-effect transistor MOS1 at the current moment is the power supply voltage. Thus, the VGS of the field-effect transistor MOS1 is greater than 0, which satisfies the condition for the field-effect transistor MOS1 to conduct. Therefore, the field-effect transistor MOS1 is turned on.
[0054] After the field-effect transistor MOS1 is turned on, the power resistor R1 starts to work, that is, the power resistor R1 starts to heat the base station.
[0055] Furthermore, when the base station's heating circuit is powered on, the base station's temperature exceeds the preset temperature threshold, satisfying the base station's startup conditions, and the base station begins to start. After the base station starts, the base station's controller NPU outputs a low level through the controller NPU's control terminal, pulling the gate voltage of the field-effect transistor MOS1 low (close to ground). Therefore, at the current moment, the VGS (voltage difference between the gate and source) of the field-effect transistor MOS1 is approximately equal to 0, which does not meet the condition for the field-effect transistor MOS1 to conduct, so the field-effect transistor MOS1 does not conduct.
[0056] After the field-effect transistor MOS1 is not turned on, the power resistor R1 stops working, that is, the power resistor R1 stops heating the base station.
[0057] It can be seen that under non-low temperature conditions, the base station's heating circuit only heats the base station for a short time (instantaneously). After the base station starts up, the power resistor R1 stops heating the base station. Therefore, under non-low temperature conditions, the base station's heating circuit will not cause the base station's temperature to become too high.
[0058] As can be seen from the above working principle, the heating circuit of the base station provided in this application embodiment can heat the base station through the power resistor R1 when the temperature of the base station is lower than the preset temperature threshold, so that the base station can start normally. When the temperature of the base station is greater than or equal to the preset temperature threshold, the power resistor R1 is controlled to stop heating the base station, so that the base station will not be damaged due to excessive temperature caused by the continuous heating of the power resistor R1.
[0059] As can be seen from the above, the heating circuit of the base station provided in this application includes a power resistor, a first resistor, a field-effect transistor (FET), and a base station controller. The first end of the power resistor is connected to the power supply, the second end of the power resistor is connected to the drain of the FET, the second end of the first resistor, the control terminal of the controller, and the gate of the FET are all connected together, and the source of the FET is grounded. The heating circuit is used to: heat the base station through the power resistor when the temperature of the base station is lower than a preset temperature threshold; and control the power resistor to stop heating the base station when the temperature of the base station is greater than or equal to the preset temperature threshold. The heating circuit of this application can heat the base station in a low-temperature environment, enabling the base station to start normally. Therefore, it is not necessary to select devices and / or chips with good low-temperature characteristics to construct the base station, reducing the cost of the base station.
[0060] Please see Figure 2 , Figure 2 This is a schematic diagram of the heating circuit of a base station provided in another embodiment of this application.
[0061] Figure 2 The heating circuit provided for the base station and Figure 1 The difference between the heating circuits provided for the base station and those for other base stations lies in: Figure 2 The heating circuit provided for the base station also includes a transistor Q1 and a second resistor R3.
[0062] In this configuration, the base of transistor Q1 is connected to the control terminal of the controller NPU, the collector of transistor Q1 is connected to the second terminal of the first resistor R2 and the gate of the field-effect transistor MOS1, and the emitter of transistor Q1 is grounded.
[0063] Among them, transistor Q1 is an NPN type transistor.
[0064] The function of transistor Q1 is to assist the control terminal of the NPU controller in controlling the field-effect transistor MOS1.
[0065] Specifically, transistor Q1 can be used to control the gate level of field-effect transistor MOS1, thereby controlling whether MOS1 is turned on or off. More specifically, transistor Q1 can be used to turn itself on or off according to the level signal output by the control terminal of the controller NPU, thereby controlling the gate level of field-effect transistor MOS1, and thus controlling whether MOS1 is turned on or off.
[0066] The first end of the second resistor R3 is connected to the control terminal of the controller NPU, and the second end of the second resistor R3 is connected to the base of the transistor Q1.
[0067] The second resistor R3 is connected in series between the control terminal of the controller NPU and the base of the transistor Q1 to limit the current flowing from the control terminal of the controller NPU to the base of the transistor Q1.
[0068] In practical applications, a resistor with an appropriate resistance value can be selected as the second resistor R3 to ensure that the current flowing into the base of transistor Q1 is within a safe range, preventing damage to the control terminal of the controller NPU and / or transistor Q1 caused by excessive current.
[0069] Please see Figure 3 , Figure 3 This is a schematic diagram of the structure of a heating circuit for a base station, provided in another embodiment of this application.
[0070] Figure 3 The heating circuit provided for the base station and Figure 2 The difference between the heating circuits provided for the base station and those for other base stations lies in: Figure 3 The provided information includes the PMOS transistor MOSFET in the heating circuit of the base station, and the connection relationships between various components in the heating circuit of the base station.
[0071] like Figure 3 As shown, the heating circuit of the base station provided in this application embodiment includes a power resistor R7, a third resistor R8, a field-effect transistor MOS2, a base station controller NPU, a transistor Q2, and a fourth resistor R9.
[0072] In this configuration, the drain of MOSFET MOS2, the collector of transistor Q2, and the power supply are connected together. The gate of MOSFET MOS2, the emitter of transistor Q2, and the first terminal of the third resistor R8 are connected together. The source of MOSFET MOS2 is connected to the first terminal of power resistor R7. The second terminals of power resistor R7 and the second terminals of the third resistor R8 are connected to ground. The base of transistor Q2 is connected to the first terminal of the fourth resistor R9. The second terminal of the fourth resistor R9 is connected to the control terminal of the base station's controller NPU.
[0073] Among them, transistor Q2 is an NPN type transistor.
[0074] The heating circuit of the base station provided in this application embodiment can heat the base station through the power resistor R1 when the temperature of the base station is lower than the preset temperature threshold, and control the power resistor R1 to stop heating the base station when the temperature of the base station is greater than or equal to the preset temperature threshold.
[0075] Figure 3 The working principle of the heating circuit of the base station shown is the same as Figure 1 or Figure 2 The heating circuit of the base station shown is similar and will not be described in detail here.
[0076] Please see Figure 4 , Figure 4 This is a schematic diagram of the structure of a heating device for a base station provided in an embodiment of this application.
[0077] like Figure 4 As shown, the heating device for the base station provided in this application embodiment may include several heating circuits for the base station provided in this application embodiment.
[0078] In this embodiment, the power resistor in any heating circuit of the heating device of the base station provided by this application is set at any of the following positions: a position where the distance from the base station controller is less than a preset distance threshold, a position where the distance from the base station's synchronous dynamic random access memory is less than a preset distance threshold, and a position where the distance from the base station's flash memory is less than a preset distance threshold.
[0079] In one possible implementation, the heating device for the base station provided in this application embodiment may include three such... Figure 1 or Figure 2 The heating circuits of the base stations shown can be configured such that the power resistor R1 of one base station's heating circuit is positioned at a distance less than a preset distance threshold from the base station's controller, the power resistor R1 of the heating circuit of another base station is positioned at a distance less than the preset distance threshold from the base station's synchronous dynamic random access memory, and the power resistor R1 of the heating circuit of yet another base station is positioned at a distance less than the preset distance threshold from the base station's flash memory. This maximizes the success rate of base station startup under low-temperature conditions.
[0080] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, refer to the relevant descriptions of other embodiments.
[0081] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.
[0082] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.
Claims
1. A heating circuit for a base station, characterized in that, The heating circuit includes a power resistor, a first resistor, a field-effect transistor (FET), and a base station controller; the first terminal of the power resistor and the first terminal of the first resistor are connected to the power supply; the second terminal of the power resistor is connected to the drain of the FET; the second terminal of the first resistor, the control terminal of the controller, and the gate of the FET are connected to the same terminal; the source of the FET is grounded; the heating circuit is used for: When the temperature of the base station is lower than a preset temperature threshold, the base station is heated by the power resistor. When the temperature of the base station is greater than or equal to the preset temperature threshold, the power resistor is controlled to stop heating the base station.
2. The heating circuit according to claim 1, characterized in that, The heating circuit also includes a transistor; the base of the transistor is connected to the control terminal of the controller, the collector of the transistor is connected to the second terminal of the first resistor and the gate of the field-effect transistor, and the emitter of the transistor is grounded.
3. The heating circuit according to claim 2, characterized in that, The heating circuit also includes a second resistor; the first end of the second resistor is connected to the control terminal of the controller, and the second end of the second resistor is connected to the base of the transistor.
4. The heating circuit according to claim 2, characterized in that, The transistor is an NPN type transistor.
5. The heating circuit according to claim 1, characterized in that, The field-effect transistor is an NMOS transistor.
6. The heating circuit according to claim 1, characterized in that, The source of the field-effect transistor includes a first source pin, a second source pin, and a third source pin connected in parallel.
7. The heating circuit according to claim 1, characterized in that, The power resistor is positioned at a distance less than a preset distance threshold from the base station.
8. The heating circuit according to claim 1, characterized in that, The control terminal of the controller is the controller's general-purpose input / output port.
9. A heating device for a base station, characterized in that, The heating device includes a plurality of heating circuits as described in any one of claims 1 to 8.
10. The heating device according to claim 9, characterized in that, The power resistor in any heating circuit of the heating device is set at any of the following locations: a location where the distance from the base station controller is less than a preset distance threshold, a location where the distance from the base station's synchronous dynamic random access memory is less than the preset distance threshold, and a location where the distance from the base station's flash memory is less than the preset distance threshold.