A high-efficiency temperature field homogenization device for crystal growth

Abstract

The utility model relates to the technical field of crystal growth, concretely is a kind of high-efficiency temperature field homogenization device for crystal growth, the utility model includes spindle shape growth furnace, the middle part side wall of spindle shape growth furnace is opened in and passes in feed inlet, the inner wall of spindle shape growth furnace is provided with cavity, and multiple heating fins are fixedly installed in cavity. The utility model can heat by heating fin, can improve the temperature of spindle shape growth furnace top and bottom, thereby reduce the heat difference of temperature field, start rotating motor, the output end of rotating motor is driven bidirectional screw rod to carry out positive and negative rotation by positive and negative rotation, bidirectional screw rod positive and negative drive two arc heating rings to carry out to and fro rotation, utilize the temperature sensor on arc heating ring to detect the temperature in the cavity of spindle shape growth furnace, when local temperature exceeds the set threshold of first temperature sensor, start heating wire to heat, further enhance the uniformity of temperature field.

Description

Technical Field

[0001] This utility model relates to the field of crystal growth technology, specifically a high-efficiency temperature field homogenization device for crystal growth. Background Technology

[0002] A crystal growth apparatus is a specialized device that promotes the orderly arrangement of atoms or molecules to form single or polycrystalline materials under precisely controlled environmental conditions such as temperature field, air pressure, and atmosphere. Its core function is to build a stable temperature gradient through a heating system. It is widely used in the preparation of key materials such as sapphire, silicon carbide, and laser crystals, and is a core piece of equipment in high-end fields such as semiconductors, optics, and electronics.

[0003] In the field of crystal growth, existing cylindrical growth furnaces for crystal growth generally adopt sidewall heating, which provides the heat required for crystal growth through heating wires or heating jackets around the circumference of the furnace body. However, the heat is only input from the radial sidewall in one direction, which easily forms a non-uniform temperature field with "low temperature at the top, temperature drop at the bottom, and overheating in the middle". This temperature field with large temperature difference will cause instability at the crystal growth interface, leading to crystal cracking and making it difficult to meet the crystal growth requirements. To this end, we propose a high-efficiency temperature field homogenization device for crystal growth. Utility Model Content

[0004] The purpose of this invention is to provide a high-efficiency temperature field homogenization device for crystal growth, so as to solve the problems mentioned in the background art.

[0005] The objective of this utility model can be achieved through the following technical solutions:

[0006] A high-efficiency temperature field homogenization device for crystal growth includes a spindle-shaped growth furnace. The middle side wall of the spindle-shaped growth furnace has a through-hole, and the inner wall of the spindle-shaped growth furnace has a cavity, in which multiple heating elements are fixedly installed.

[0007] The inner cavity of the spindle-shaped growth furnace is equipped with an auxiliary mechanism, and the middle of the outer wall of the spindle-shaped growth furnace is equipped with a sliding mechanism.

[0008] The auxiliary mechanism includes a rotating motor fixedly installed on the top surface of the spindle-shaped growth furnace. The output end of the rotating motor passes through the top plate of the spindle-shaped growth furnace and is fixedly connected to a bidirectional threaded rod. A sealing sleeve is fixedly fitted on the surface of the output end of the rotating motor. The sealing sleeve is rotatably connected to the top plate of the spindle-shaped growth furnace. The bottom end of the bidirectional threaded rod is rotatably connected to the bottom surface of the inner cavity of the spindle-shaped growth furnace. The inner cavity of the spindle-shaped growth furnace is provided with a limit rod. The top end of the limit rod is fixedly connected to the top surface of the inner cavity of the spindle-shaped growth furnace, and the bottom end of the limit rod is fixedly connected to the bottom surface of the inner cavity of the spindle-shaped growth furnace. Both ends of the bidirectional threaded rod are threadedly connected to arc-shaped heating rings. Both arc-shaped heating rings are hollow, and heating wires are fixedly installed in the cavities. Temperature sensors are fixedly installed on the top surfaces of both arc-shaped heating rings.

[0009] Preferably, the sliding mechanism includes an electric telescopic rod fixedly connected to the side wall of the spindle-shaped growth furnace, a limiting slide rod is provided above the electric telescopic rod, one end of the limiting slide rod is fixedly connected to the side wall of the spindle-shaped growth furnace, and an L-shaped connecting rod is fixedly connected to the output end of the electric telescopic rod, the surface of the L-shaped connecting rod being slidably connected to the limiting slide rod.

[0010] Preferably, a sealing door is fixedly connected to one end of the L-shaped connecting rod near the spindle-shaped growth furnace, and the surface of the sealing door is in contact with and sealed against the wall of the feed inlet.

[0011] Preferably, a connecting column is fixedly connected to one side wall of the sealed door near the spindle-shaped growth furnace, and a placement box is fixedly connected to one end of the connecting column near the spindle-shaped growth furnace.

[0012] Preferably, the bottom of the spindle-shaped growth furnace is fixedly connected to a base plate.

[0013] Preferably, counterweights are placed on both sides of the top surface of the base plate.

[0014] The beneficial effects of this utility model are:

[0015] This invention utilizes a spindle-shaped growth furnace, temperature sensors, and arc-shaped heating rings. Heating plates are installed on the side walls, bottom, and top of the spindle-shaped growth furnace to increase the temperature at the top and bottom, thereby reducing thermal differences in the temperature field. A rotating motor is activated, and its output drives a bidirectional threaded rod to rotate in both directions. This bidirectional threaded rod, in turn, drives two arc-shaped heating rings to rotate back and forth. Temperature sensors on the arc-shaped heating rings monitor the temperature inside the spindle-shaped growth furnace cavity. When a localized temperature exceeds the set threshold of the first temperature sensor, an electric heating wire is activated to further enhance the uniformity of the temperature field, improve the stability of crystal growth, prevent crystal cracking, and better meet the growth requirements of crystals, thus enhancing the practicality of the device. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a three-dimensional structural schematic diagram of the present invention;

[0018] Figure 2 This is a schematic diagram of the auxiliary mechanism of this utility model;

[0019] Figure 3 This is a schematic diagram of the sliding mechanism of this utility model;

[0020] Figure 4 This is a partial structural schematic diagram of the sliding mechanism of this utility model.

[0021] The attached diagram is labeled as follows: 1. Spindle-shaped growth furnace; 2. Base plate; 3. Counterweight; 4. Auxiliary mechanism; 41. Rotary motor; 42. Bidirectional threaded rod; 43. Limiting rod; 44. Arc-shaped heating ring; 45. Temperature sensor; 5. Sliding mechanism; 51. Electric telescopic rod; 52. Limiting slide rod; 53. L-shaped connecting rod; 54. Sealing door; 55. Connecting column; 56. Placement box; 6. Feed inlet. Detailed Implementation

[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0023] like Figures 1-4 As shown, a high-efficiency temperature field homogenization device for crystal growth includes a spindle-shaped growth furnace 1. A feed inlet 6 is provided through the middle side wall of the spindle-shaped growth furnace 1. A cavity is provided in the inner wall of the spindle-shaped growth furnace 1, and multiple heating elements are fixedly installed within the cavity. An auxiliary mechanism 4 is provided within the inner cavity of the spindle-shaped growth furnace 1, and a sliding mechanism 5 is provided in the middle of the outer wall of the spindle-shaped growth furnace 1. The auxiliary mechanism 4 includes a rotating motor 41 fixedly installed on the top surface of the spindle-shaped growth furnace 1. A bidirectional threaded rod 42 is fixedly connected to the output end of the rotating motor 41 through the top plate of the spindle-shaped growth furnace 1. A fixed sleeve is provided on the surface of the output end of the rotating motor 41. A sealing sleeve is provided, which is rotatably connected to the top plate of the spindle-shaped growth furnace 1. The bottom end of the bidirectional threaded rod 42 is rotatably connected to the bottom surface of the inner cavity of the spindle-shaped growth furnace 1. The inner cavity of the spindle-shaped growth furnace 1 is provided with a limiting rod 43. The top end of the limiting rod 43 is fixedly connected to the top surface of the inner cavity of the spindle-shaped growth furnace 1, and the bottom end of the limiting rod 43 is fixedly connected to the bottom surface of the inner cavity of the spindle-shaped growth furnace 1. Both ends of the bidirectional threaded rod 42 are threadedly connected to arc-shaped heating rings 44. Both arc-shaped heating rings 44 are hollow, and heating wires are fixedly installed in the cavities. Temperature sensors 45 are fixedly installed on the top surfaces of both arc-shaped heating rings 44.

[0024] In practice, by installing heating plates on the side walls, bottom and top of the spindle-shaped growth furnace 1, the temperature at the top and bottom of the spindle-shaped growth furnace 1 can be increased, thereby reducing the heat difference in the temperature field.

[0025] The rotating motor 41 is started, and the output end of the rotating motor 41 drives the bidirectional threaded rod 42 to rotate in both directions. The bidirectional threaded rod 42 drives the two arc-shaped heating rings 44 to rotate back and forth. The temperature sensor 45 on the arc-shaped heating rings 44 is used to detect the temperature inside the spindle-shaped growth furnace 1. When the local temperature reaches the set threshold of the first temperature sensor 45, the heating wire is started to heat, which further enhances the uniformity of the temperature field and enhances the practicality of the device.

[0026] As a technical optimization of this utility model, the sliding mechanism 5 includes an electric telescopic rod 51 fixedly connected to the side wall of the spindle-shaped growth furnace 1. A limiting slide rod 52 is provided above the electric telescopic rod 51. One end of the limiting slide rod 52 is fixedly connected to the side wall of the spindle-shaped growth furnace 1. An L-shaped connecting rod 53 is fixedly connected to the output end of the electric telescopic rod 51. The surface of the L-shaped connecting rod 53 is slidably connected to the limiting slide rod 52. A sealing door 54 is fixedly connected to the end of the L-shaped connecting rod 53 near the spindle-shaped growth furnace 1. The surface of the sealing door 54 is movably fitted and sealed to the groove wall of the feed inlet 6. A connecting column 55 is fixedly connected to the side wall of the sealing door 54 near the spindle-shaped growth furnace 1. A placement box 56 is fixedly connected to the end of the connecting column 55 near the spindle-shaped growth furnace 1. A bottom plate 2 is fixedly connected to the bottom of the spindle-shaped growth furnace 1. Counterweights 3 are placed on both sides of the top surface of the bottom plate 2.

[0027] In practice, the electric telescopic rod 51 is activated, and the sealing door 54 is opened by the telescopic end of the electric telescopic rod 51. The crystal to be grown is placed on the placement box 56. The sealing door 54 is retracted by the telescopic end of the electric telescopic rod 51 to seal the feed port 6. The placement box 56 can be moved to the center of the cavity of the spindle-shaped growth furnace 1 for growth, which is convenient for use.

[0028] After the crystal growth is completed, the L-shaped connecting rod 53 is moved by activating the telescopic end of the electric telescopic rod 51, which will open the sealing door 54 and remove the crystal from the placement box 56.

[0029] The stability of the device during use can be enhanced by utilizing the counterweight 3 on the base plate 2.

[0030] In use, the electric telescopic rod 51 is activated, and the telescopic end of the electric telescopic rod 51 drives the sealing door 54 to open, placing the crystal to be grown on the placement box 56. The telescopic end of the electric telescopic rod 51 drives the sealing door 54 to retract and seal the feed port 6. The placement box 56 can then be moved to the center of the cavity of the spindle-shaped growth furnace 1 for growth. During the growth process, the rotating motor 41 is activated, and the output end of the rotating motor 41 drives the bidirectional threaded rod 42 to rotate in both directions. The bidirectional threaded rod 42 drives the two arc-shaped heating rings 44 to rotate back and forth. The temperature sensor 45 on the arc-shaped heating rings 44 is used to detect the temperature inside the cavity of the spindle-shaped growth furnace 1. When the local temperature reaches the set threshold of the first temperature sensor 45, the heating wire is activated to heat the area, enhancing the uniformity of the temperature field.

[0031] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model.

Claims

1. A high-efficiency temperature field homogenization device for crystal growth, comprising a spindle-shaped growth furnace (1), characterized in that, The spindle-shaped growth furnace (1) has a feed inlet (6) through the middle side wall, and the inner wall of the spindle-shaped growth furnace (1) is provided with a cavity, and multiple heating elements are fixedly installed in the cavity. The inner cavity of the spindle-shaped growth furnace (1) is provided with an auxiliary mechanism (4), and the middle part of the outer wall of the spindle-shaped growth furnace (1) is provided with a sliding mechanism (5). The auxiliary mechanism (4) includes a rotating motor (41) fixedly installed on the top surface of the spindle-shaped growth furnace (1). The output end of the rotating motor (41) is fixedly connected to a bidirectional threaded rod (42) through the top plate of the spindle-shaped growth furnace (1). A sealing sleeve is fixedly connected to the surface of the output end of the rotating motor (41). The sealing sleeve is rotatably connected to the top plate of the spindle-shaped growth furnace (1). The bottom end of the bidirectional threaded rod (42) is rotatably connected to the bottom surface of the inner cavity of the spindle-shaped growth furnace (1). The inner cavity is provided with a limiting rod (43). The top end of the limiting rod (43) is fixedly connected to the top surface of the inner cavity of the spindle-shaped growth furnace (1), and the bottom end of the limiting rod (43) is fixedly connected to the bottom surface of the inner cavity of the spindle-shaped growth furnace (1). Both ends of the bidirectional threaded rod (42) are threadedly connected to arc-shaped heating rings (44). Both arc-shaped heating rings (44) are hollow, and heating wires are fixedly installed in the hollow. Temperature sensors (45) are fixedly installed on the top surface of both arc-shaped heating rings (44).

2. The high-efficiency temperature field homogenization device for crystal growth according to claim 1, characterized in that, The sliding mechanism (5) includes an electric telescopic rod (51) fixedly connected to the side wall of the spindle-shaped growth furnace (1). A limiting slide rod (52) is provided above the electric telescopic rod (51). One end of the limiting slide rod (52) is fixedly connected to the side wall of the spindle-shaped growth furnace (1). An L-shaped connecting rod (53) is fixedly connected to the output end of the electric telescopic rod (51). The surface of the L-shaped connecting rod (53) is slidably connected to the limiting slide rod (52).

3. The high-efficiency temperature field homogenization device for crystal growth according to claim 2, characterized in that, The L-shaped connecting rod (53) is fixedly connected to a sealing door (54) at one end near the spindle-shaped growth furnace (1). The surface of the sealing door (54) is in contact with and sealed against the wall of the feed inlet (6).

4. The high-efficiency temperature field homogenization device for crystal growth according to claim 3, characterized in that, The sealing door (54) is fixedly connected to a connecting column (55) on one side wall near the spindle-shaped growth furnace (1), and a placement box (56) is fixedly connected to one end of the connecting column (55) near the spindle-shaped growth furnace (1).

5. The high-efficiency temperature field homogenization device for crystal growth according to claim 1, characterized in that, The bottom of the spindle-shaped growth furnace (1) is fixedly connected to a bottom plate (2).

6. The high-efficiency temperature field homogenization device for crystal growth according to claim 5, characterized in that, Counterweights (3) are placed on both sides of the top surface of the base plate (2).

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