Substrate and power module

Abstract

The utility model relates to a kind of substrate and power module, substrate at least includes the conductive layer being arranged in one side, the conductive layer includes sequentially arranged input welding area, lower bridge power device welding area, upper bridge power device welding area, output welding area along first direction, input welding area includes the input positive electrode welding area and input negative electrode welding area being arranged in second direction, upper bridge power device welding area is equipped with multiple, the quantity of lower bridge power device welding area is same with the quantity of upper bridge power device welding area, in second direction, first connecting area is equipped between adjacent lower bridge power device welding area, first connecting area is connected with input negative electrode welding area, in second direction, second connecting area is equipped between adjacent upper bridge power device welding area, second connecting area is connected with all lower bridge power device welding area.The utility model uses compact partition design, and power device is all welded in each partition in the form of patch, reduce power loop parasitic inductance and module volume.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device technology, and in particular to a substrate and a power module. Background Technology

[0002] Power semiconductor devices are the core components of power electronic converters, responsible for turning the circuit on and off. An excellent power module needs to possess good manufacturability, electrical performance, and reliability. The substrate layout of the power module largely determines its electrical performance and manufacturing process, indirectly affecting its reliability.

[0003] High-power IGBT modules, commonly available in 62mm or EconoDual3 packages, consist of multiple power chips soldered onto a DBC (Diverterless Circuit Block), connected by conductive metal layers and bonding wires on the DBC surface, forming a high-power half-bridge topology. Due to its compact layout and symmetrical parallel branch design, short metal layer and bonding wire paths, and low impedance, it generally offers advantages such as high power density, low parasitic inductance in the positive and negative power circuits, and good current sharing performance in parallel chip layouts. Another high-power IGBT module solution involves connecting multiple low-current TO247 packaged IGBTs in parallel, soldering their pins onto a PCB, and routing them through the PCB layout to form a high-power half-bridge topology. The main advantages of this solution are lower cost and greater flexibility in power topology and PCB design.

[0004] However, both of the above solutions have certain drawbacks. For example, high-power IGBT potting modules have disadvantages such as high cost, high manufacturing threshold, complex process, and need for secondary soldering and bonding wire bonding. For example, the TO247 packaged IGBT single tube parallel solution has disadvantages such as the greater the number of parallel single tubes, the greater the difficulty in designing low impurity in the power positive and negative circuits and current sharing in PCB layout, the larger the overall space occupied by the solution, and the lower the power density.

[0005] Therefore, there is a need for a compact substrate and power module that can leverage the low-cost advantages of the plastic-encapsulated single-tube parallel solution while reducing parasitic inductance, improving current sharing, and increasing power density. Utility Model Content

[0006] In order to overcome the shortcomings of the prior art, this utility model provides a substrate and a power module.

[0007] The technical solution of this utility model is as follows: A substrate includes at least one conductive layer disposed on one side, the conductive layer including an input soldering area, a lower bridge power device soldering area, an upper bridge power device soldering area and an output soldering area arranged sequentially along a first direction, the input soldering area including an input positive electrode soldering area and an input negative electrode soldering area disposed in a second direction, the first direction being perpendicular to the second direction; The upper bridge power device welding area is provided with at least two, and the number of the lower bridge power device welding areas is the same as the number of the upper bridge power device welding areas. A first connection area is provided between the welding areas of the lower bridge power devices in the second direction, and the first connection area is connected to the input negative electrode welding area; A second connection area is provided between the upper bridge power device welding areas in the second direction, and the second connection area is connected to all the lower bridge power device welding areas.

[0008] As a further improvement of this utility model, the upper bridge power device welding area is symmetrically arranged with respect to the centerline of the substrate in the second direction, and the second connection area is provided between the symmetrically distributed upper bridge power device welding areas. The lower bridge power device welding area is symmetrically arranged along the centerline of the substrate in the second direction, and the first connection area is provided between the symmetrically distributed lower bridge power device welding areas.

[0009] As a further improvement of this utility model, the upper bridge power device welding area is provided in two places, namely a first upper bridge power device welding area and a second upper bridge power device welding area arranged along the second direction, and the first upper bridge power device welding area and the second upper bridge power device welding area are symmetrically arranged with respect to the center line of the substrate. The lower bridge power device welding area is provided in two places, namely a first lower bridge power device welding area and a second lower bridge power device welding area arranged along the second direction. The first lower bridge power device welding area and the second lower bridge power device welding area are symmetrically arranged with respect to the center line of the substrate. A first connection area is provided between the first lower bridge power device welding area and the second lower bridge power device welding area, and a second connection area is provided between the first upper bridge power device welding area and the second upper bridge power device welding area. The second connection area is connected to the first lower bridge power device welding area and the second lower bridge power device welding area respectively.

[0010] As a further improvement of this utility model, in the first direction, the output welding area and the second connection area are spaced apart; or, The output welding area is directly connected to the second connection area.

[0011] As a further improvement of this utility model, it also includes an insulating layer and a thermally conductive layer, wherein the conductive layer, the insulating layer, and the thermally conductive layer are stacked sequentially.

[0012] A power module includes a substrate as described above, wherein input power terminals are provided in both the input positive electrode welding area and the input negative electrode welding area, and output power terminals are provided in the output welding area. At least one first power device is provided in the welding area of ​​the lower bridge power device. The first pin of the first power device is electrically connected to the welding area of ​​the lower bridge power device, and the second pin of the first power device is electrically connected to the first connection area. At least one second power device is provided in the upper bridge power device welding area. The first pin of the second power device is electrically connected to the upper bridge power device welding area, and the second pin of the second power device is electrically connected to the second connection area. The input positive electrode welding area is electrically connected to the upper bridge power device welding area via a first connector, and the second connection area is electrically connected to the output welding area.

[0013] As a further improvement of this utility model, the first connector includes jumper copper busbars, the number of which is the same as the number of the upper bridge power device soldering areas, and the jumper copper busbars correspond one-to-one with the upper bridge power device soldering areas; The jumper busbar is positioned above the first power device. The first end of the jumper busbar is electrically connected to the input positive electrode soldering area, and the second end of the jumper busbar is electrically connected to a soldering area of ​​the upper bridge power device.

[0014] As a further improvement of this utility model, the second connection area and the output welding area are electrically connected through a second connector.

[0015] As a further improvement of this utility model, the second connector includes a shunt, the input end of which is electrically connected to the second connection area, and the output end of which is electrically connected to the output welding area.

[0016] As a further improvement of this utility model, each of the lower bridge power device welding areas is provided with two first power devices, and the two first power devices are arranged along the first direction. Each of the upper bridge power device welding areas is provided with two second power devices, and the two second power devices are arranged along the first direction.

[0017] As a further improvement of this utility model, the first and second pins of the first power device and the second power device are surface mount pins, and the third pin of the first power device and the second power device is a pin.

[0018] As a further improvement of this utility model, the substrate is also provided with signal terminals, which are pins.

[0019] As a further improvement of this utility model, a temperature sensor is also provided on the substrate, and the pins of the temperature sensor are pins.

[0020] According to the above-described solution, the beneficial effects of this utility model are as follows: 1. This utility model sets the first connection area between the welding areas of the lower bridge power devices adjacent to each other along the second direction, and sets the second connection area between the welding areas of the upper bridge power devices adjacent to each other along the second direction. This can effectively reduce the connection path between the devices, achieve a compact overall structure, and improve the overall power density.

[0021] 2. This utility model adopts a compact partitioned design, dividing the conductive layer into an output soldering area, an input soldering area, an upper bridge power device soldering area, and a lower bridge power device soldering area. 3. The power devices of this utility model are all surface-mounted and soldered in each partition to form a high-power half-bridge power module. Compared with the EconoDual3 package module, the parasitic inductance of the power circuit is reduced, the module size is reduced, and the manufacturing threshold is low, the process is simple, and the cost is saved. 4. This utility model connects the positive input welding area and the upper bridge power device welding area through jumper copper busbar, which has the effect of magnetic field cancellation, thereby reducing the loop area and parasitic inductance between the positive input power terminal and the negative input power terminal. 5. The upper and lower bridges of this utility model adopt a parallel structure of power devices, and the segments of the parallel power devices are symmetrically arranged, so that the parasitic resistance and parasitic inductance of each power device branch are nearly equivalent, thereby ensuring good current sharing and reducing stray inductance of each power device in a compact layout. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the substrate at a first angle provided by this utility model; Figure 2 This is a schematic diagram of the second angle of the substrate provided by this utility model; Figure 3 This is a structural schematic diagram of the power module provided by this utility model.

[0023] In the diagram: 1. Substrate; 11. Conductive layer; 111. Output soldering area; 112. Input positive soldering area; 113. Input negative soldering area; 114. First connection area; 115. Second connection area; 116. First upper bridge power device soldering area; 117. Second upper bridge power device soldering area; 118. First lower bridge power device soldering area; 119. Second lower bridge power device soldering area; 12. Insulating layer; 13. Thermally conductive layer; 2. Input power terminal; 3. Output power terminal; 4. First power device; 5. Second power device; 6. Jumper busbar; 7. Shunt; 8. Signal terminal; 9. Temperature sensor. Detailed Implementation

[0024] The technical solution of this utility model will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0025] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0026] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances. Furthermore, the technical features involved in the different embodiments of this utility model described below can be combined with each other as long as they do not conflict with each other.

[0027] This utility model provides a substrate 1, which includes at least one conductive layer 11 disposed on one side. The conductive layer 11 includes an input soldering area, a lower bridge power device soldering area, an upper bridge power device soldering area, and an output soldering area 111 arranged sequentially along a first direction.

[0028] In practical use, the input power terminal 2 can be soldered to the input soldering area in the form of a surface mount, and the output power terminal 3 can be soldered to the output soldering area 111 in the form of a surface mount, which can effectively reduce the space occupied by the substrate 1 in the first direction.

[0029] Optionally, all solder areas can be made of copper foil.

[0030] The input welding area includes an input positive electrode welding area and an input negative electrode welding area arranged in the second direction, with the first direction perpendicular to the second direction.

[0031] The positions of the positive input welding area and the negative input welding area in the second direction can be interchanged, meaning that the positive input welding area and the negative input welding area can be arranged in the following two ways, see [link / reference]. Figure 1 Taking the second direction as the left and right directions as an example: Arrangement method 1: The positive input welding area 112 is located to the left of the negative input welding area 113; Arrangement Method 2: The positive input welding area is located to the right of the negative input welding area.

[0032] Optionally, the upper bridge power device soldering area is provided in multiple ways, such as two, three or more, and the number of lower bridge power device soldering areas is the same as the number of upper bridge power device soldering areas. In the second direction, a first connection area 114 is provided between adjacent lower bridge power device welding areas, and the first connection area 114 is connected to the input negative electrode welding area; it should be noted that, regardless of whether the arrangement method one or the arrangement method two is adopted, the first connection area 114 is connected to the input negative electrode welding area.

[0033] In the second direction, a second connection area 115 is provided between adjacent upper bridge power device soldering areas, and the second connection area 115 is connected to all lower bridge power device soldering areas.

[0034] The substrate 1 provided by this utility model adopts a compact partition design, dividing the conductive layer 11 into an output soldering area 111, an input soldering area, an upper bridge power device soldering area, and a lower bridge power device soldering area. The first connection area 114 is disposed between adjacent lower bridge power device soldering areas along the second direction, and the second connection area 115 is disposed between adjacent upper bridge power device soldering areas along the second direction. This can effectively reduce the connection paths between the devices, making the overall structure of the power module using this substrate compact and the volume smaller, thereby improving the power density of the power module.

[0035] Furthermore, both the upper and lower bridge power device soldering areas adopt a symmetrical structure, which can improve the current equalization of the substrate 1 and reduce the interference inductance. As an embodiment of this utility model, in the second direction, multiple upper bridge power device soldering areas are symmetrically arranged with respect to the centerline of the substrate, and a second connection area 115 is provided between the symmetrically distributed upper bridge power device soldering areas; In the second direction, multiple lower bridge power device welding areas are symmetrically arranged around the centerline of the substrate, and a first connection area 114 is provided between the symmetrically distributed lower bridge power device welding areas.

[0036] This invention adopts a symmetrical design for both the upper bridge power device welding area and the lower bridge power device welding area. This not only reflects the neat, orderly and compact structure of the substrate conductive layer 11, improving the overall power density, but also facilitates the connection of subsequent power devices, achieving the effects of current equalization and reducing noise.

[0037] As one embodiment of this utility model, taking the setting of four lower bridge power device soldering areas as an example, the four lower bridge power device soldering areas are lower bridge power device soldering area A, lower bridge power device soldering area B, lower bridge power device soldering area C, and lower bridge power device soldering area D. In the second direction, lower bridge power device soldering area A and lower bridge power device soldering area B are located on one side of the center line of substrate 1, and lower bridge power device soldering area C and lower bridge power device soldering area D are located on the other side of the center line of substrate 1. The first connection area 114 can adopt the following configuration methods: Setting method 1: One first connection area 114 is set, and one first connection area 114 is set between the lower bridge power device soldering area A and the lower bridge power device soldering area C. Setting method 2: One first connection area 114 is set, and one first connection area 114 is set between the lower bridge power device welding area B and the lower bridge power device welding area D. Setting method 3: One first connection area 114 is set, and the first connection area 114 extends from the lower bridge power device welding area A and the lower bridge power device welding area C to the lower bridge power device welding area B and the lower bridge power device welding area D. Configuration Method 4: Two first connection areas 114 are set. One first connection area 114 is set between the lower bridge power device welding area A and the lower bridge power device welding area C, and the other first connection area 114 is set between the lower bridge power device welding area B and the lower bridge power device welding area D.

[0038] As an optional embodiment of this utility model, the upper bridge power device welding area can also be selected with a suitable structure according to specific usage requirements, and the number of upper bridge power device welding areas is the same as the number of lower bridge power device welding areas.

[0039] As an embodiment of this utility model, taking the setting of four upper bridge power device welding areas as an example, the four upper bridge power device welding areas are: upper bridge power device welding area E, upper bridge power device welding area F, upper bridge power device welding area G, and upper bridge power device welding area H. In the second direction, upper bridge power device welding areas E and F are located on one side of the center line of substrate 1, and upper bridge power device welding areas G and H are located on the other side of the center line of substrate 1. The second connection area 115 can be set in such a way that the second connection area 115 extends from between upper bridge power device welding areas E and upper bridge power device welding area G to between upper bridge power device welding area F and lower bridge power device welding area H.

[0040] As an optional embodiment of this utility model, there are two upper bridge power device welding areas, namely a first upper bridge power device welding area 116 and a second upper bridge power device welding area 117 arranged along the second direction. The first upper bridge power device welding area 116 and the second upper bridge power device welding area 117 are symmetrically arranged about the center line of the substrate 1, and a second connection area 115 is provided between the first upper bridge power device welding area 116 and the second upper bridge power device welding area 117; there are two lower bridge power device welding areas, namely a first lower bridge power device welding area 118 and a second lower bridge power device welding area 119 arranged along the second direction, and a second connection area 115 is provided between them. 115 is connected to the first lower bridge power device welding area 118 and the second lower bridge power device welding area 119 respectively. The first lower bridge power device welding area 118 and the second lower bridge power device welding area 119 are symmetrically arranged with respect to the center line of the substrate 1. A first connection area 114 is provided between the first lower bridge power device welding area 118 and the second lower bridge power device welding area 119. The upper bridge power device welding area and the lower bridge power device welding area are both designed symmetrically, which can not only reflect the neat, orderly and compact structure of the substrate conductive layer 11 and improve the overall power density, but also facilitate the connection of subsequent power devices, and achieve the effect of current equalization and reduction of noise.

[0041] Optionally, in the first direction, the output welding area is arranged adjacent to the second connection area.

[0042] When a second connector needs to be installed between the output welding area and the second connection area, the output welding area and the second connection area are arranged adjacent to each other, and there is a gap between the output welding area and the second connection area.

[0043] As an optional embodiment of this utility model, the input positive electrode welding area 112 is adjacent to the first lower bridge power device welding area 118, the input negative electrode welding area 113 is adjacent to the second lower bridge power device welding area 119, and the output welding area 111 is adjacent to the second connection area 115; along the first direction, the input positive electrode welding area 112, the first lower bridge power device welding area 118, and the first upper bridge power device welding area 116 are arranged in sequence, the input negative electrode welding area 113, the second lower bridge power device welding area 119, and the second upper bridge power device welding area 117 are arranged in sequence, and the first connection area 114, the second connection area 115, and the output welding area 111 are arranged in sequence; Alternatively, the positive input welding area 112 is adjacent to the welding area 119 of the second lower bridge power device, the negative input welding area 113 is adjacent to the welding area 118 of the first lower bridge power device, and the output welding area 111 is adjacent to the second connection area 115. Along the first direction, the negative input welding area 113, the welding area 118 of the first lower bridge power device, and the welding area 116 of the first upper bridge power device are arranged in sequence, the positive input welding area 112, the welding area 119 of the second lower bridge power device, and the welding area 117 of the second upper bridge power device are arranged in sequence, and the first connection area 114, the second connection area 115, and the output welding area 111 are arranged in sequence. Along the second direction, the output welding area 111 is located between the input positive welding area 112 and the output negative welding area 113, further demonstrating the compact overall layout. Optionally, the output welding area is connected to the second connection area.

[0044] When it is not necessary to set a second connector between the output welding area and the second connection area, the output welding area and the second connection area are connected, that is, the output welding area and the second connection area are an integrated structure with no gap between them.

[0045] See Figure 2 As an embodiment of the present invention, the substrate 1 is an IMS substrate. The substrate 1 also includes an insulating layer 12 and a thermally conductive layer 13. The insulating layer 12 is made of a highly thermally conductive insulating material, and the thermally conductive layer 13 is made of a heat-dissipating metal material. The conductive layer 11, the insulating layer 12, and the thermally conductive layer 13 are stacked sequentially.

[0046] Optionally, the metal material of the conductive layer 11 can be copper.

[0047] See Figure 3This utility model provides a power module, including a substrate 1 as described above. Input power terminals 2 are provided in both the positive input welding area and the negative input welding area. The input power terminal 2 in the positive input welding area is the positive input terminal, and the input power terminal 2 in the negative input welding area is the negative input terminal. An output power terminal 3 is provided in the output welding area 111. At least one first power device 4 is provided in the lower bridge power device welding area. The first pin of the first power device 4 is electrically connected to the lower bridge power device welding area, and the second pin of the first power device 4 is electrically connected to the first connection area 114. All first power devices 4 are connected in parallel. At least one second power device 5 is provided in the upper bridge power device welding area. The first pin of the second power device 5 is electrically connected to the upper bridge power device welding area, and the second pin of the second power device 5 is electrically connected to the second connection area 115. All second power devices 5 are connected in parallel. The positive input welding area and the upper bridge power device welding area are electrically connected via a first connector. The second connection area 115 is electrically connected to the output welding area 111.

[0048] Optionally, the number of first power devices 4 in each lower bridge power device welding area is the same, and the number of second power devices 5 in each upper bridge power device welding area is the same.

[0049] The power module provided by this utility model has its internal power devices soldered in the form of surface mount technology in each partition, which can form a high-power half-bridge power module. Compared with the EconoDual3 package module, the parasitic inductance of the power circuit is reduced, the module size is reduced, and the manufacturing threshold is low, the process is simple, and the cost is saved.

[0050] Preferably, all power terminals and power devices are fixed in the corresponding soldering areas by surface mount soldering. The current sharing path from the input positive terminal to the output is as follows: the current flows from the input positive terminal through the first connector to the soldering areas of all upper bridge power devices, then through the second power device 5 to the second connection area 115, and finally to the output power terminal 3; The current sharing path from the second connection area 115 to the input negative terminal is as follows: the current flows from the second connection area 115 to all the welding areas of the lower bridge power devices, then through the first power device 4 to the first connection area 114, and finally to the input negative terminal.

[0051] As an embodiment of this utility model, the first connector includes multiple jumper copper busbars 6. The number of jumper copper busbars 6 is the same as the number of soldering areas of the upper bridge power device and they correspond one-to-one. The jumper copper busbars 6 are straddling the top of the first power device 4. The first end of the jumper copper busbar 6 is electrically connected to the input positive soldering area, and the second end of the jumper copper busbar 6 is electrically connected to the soldering area of ​​one upper bridge power device. That is, the jumper copper busbar 6 realizes the parallel connection between all the soldering areas of the upper bridge power device. Moreover, the jumper copper busbar 6 does not occupy the space of the substrate 1, making the overall layout compact. On the one hand, it effectively improves the overall power density. On the other hand, the loop area between the input positive and input negative terminals is small, and the jumper copper busbar 6 has the effect of magnetic field cancellation, thereby effectively reducing the parasitic inductance of the loop between the input positive and input negative terminals. As an optional embodiment of this utility model, the second connection area 115 and the output welding area 111 are electrically connected by a second connector. The second connector includes a shunt 7. The input end of the shunt 7 is electrically connected to the second connection area 115, and the output end of the shunt 7 is electrically connected to the output welding area 111. The current flowing through the second connection area 115 is diverted to the output welding area 111 through the output shunt 7 and output through the output power terminal 3. In addition, the second connector can also adopt other connection structures such as a binding wire.

[0052] As an optional embodiment of this utility model, the second connection area is directly connected to the output welding area, that is, the second connection area and the output welding area are the same conductive pattern on the conductive layer, and the second connection area and the output welding area are electrically connected.

[0053] As an optional embodiment of this utility model, each lower bridge power device welding area is provided with two first power devices 4, and the two first power devices 4 are arranged along a first direction. Each upper bridge power device welding area is provided with two second power devices 5, and the two second power devices 5 are arranged along a first direction. Combined with the two lower bridge power device welding areas and two upper bridge power device welding areas on the substrate 1, that is, the lower bridge is the parallel connection of the first power devices 4. By controlling the symmetrical design of each segment path of the parallel first power devices, the parasitic resistance and parasitic inductance of each branch of the first power device 4 are made nearly equivalent, thereby ensuring a good current sharing effect of the four first power devices 4 in the layout. Similarly, the upper bridge is the parallel connection of the second power devices 5. By controlling the symmetrical design of each segment path of the parallel second power devices 5, the parasitic resistance and parasitic inductance of each branch of the second power device 5 are made nearly equivalent, thereby ensuring a good current sharing effect of the four second power devices 5 in the layout.

[0054] As an embodiment of this utility model, some pins of the first power device 4 can be led out from the middle of the first power device 4, which can ensure the connection strength between each pin of the first power device 4 and the die, and effectively reduce the risk of pin detachment. The first power device 4 and the second power device 5 have the same structure, that is, some pins of the second power device 5 can also be led out from the middle of the second power device 5, reducing the risk of pin detachment. Preferably, the first power device 4 and the second power device 5 are selected in the same way, and can adopt T0247 single tube, or DPAK, or D2PAK, etc.

[0055] In one embodiment of this utility model, the first pin and the second pin of the first power device 4 and the second power device 5 are surface mount pins, and the third pin of the first power device 4 and the second power device 5 are pins. When the first power device 4 and the second power device 5 are IGBTs, the first pin is the collector, the second pin is the emitter, and the third pin is the gate. When the first power device 4 and the second power device 5 are MOSFETs, the first pin is the drain, the second pin is the source, and the third pin is the gate.

[0056] As an optional embodiment of the present invention, the substrate 1 is further provided with a signal terminal 8, which is a pin that is perpendicular to the substrate 1 and extends away from the substrate 1.

[0057] As an optional embodiment of the present invention, a temperature sensor 9 is also provided on the substrate 1. The pins of the temperature sensor 9 are all pins, which are perpendicular to the substrate 1 and extend away from the substrate 1.

[0058] In one optional embodiment, the substrate 1 has a conductive layer 11 as the upper surface and a thermally conductive layer 13 as the lower surface. That is, except for the input power terminal 2, the output power terminal 3, the first and second pins of the first power device 4, and the first and second pins of the second power device 5, the pins of the other devices disposed on the substrate 1 are all in the form of pins, and the pins extend upwards to facilitate subsequent connection.

[0059] In summary, this invention provides a substrate and a power module that employs a compact partitioned design. The conductive layer 11 is divided into an output soldering area 111, an input soldering area, an upper bridge power device soldering area, and a lower bridge power device soldering area. All power devices are surface-mounted within each partition, forming a high-power half-bridge power module. Compared to the EconoDual3 package module, this design reduces parasitic inductance in the power circuit, decreases module size, and offers lower manufacturing barriers, simpler processes, and cost savings. Furthermore, this invention places the first connection area 114 between adjacent lower bridge power device soldering areas along the second direction, and the second connection area 115 between adjacent upper bridge power device soldering areas along the second direction, effectively reducing the connection path between devices. The overall structure is compact, which improves the overall power density. The upper and lower bridge power device soldering areas are symmetrically designed, which not only reflects the neat, orderly and compact structure of the conductive layer 11 on the substrate, improving the overall power density, but also facilitates the connection of subsequent power devices, achieving the effects of current sharing and reducing parasitic inductance. The parallel connection between all upper bridge power device soldering areas is achieved through jumper copper busbars 6, and the jumper copper busbars 6 do not occupy the space of the substrate 1, making the overall layout compact. On the one hand, it effectively improves the overall power density. On the other hand, the loop area between the positive input terminal and the negative input terminal is small, and the jumper copper busbars 6 have the effect of magnetic field cancellation, thereby effectively reducing the parasitic inductance of the loop between the positive input terminal and the negative input terminal.

[0060] It should be emphasized that the above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model in any way. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model shall still fall within the scope of the technical solution of the present utility model.

Claims

1. A substrate, characterized in that, It includes at least a conductive layer (11) disposed on one side, the conductive layer (11) including an input welding area, a lower bridge power device welding area, an upper bridge power device welding area and an output welding area (111) arranged sequentially along a first direction, the input welding area including an input positive electrode welding area and an input negative electrode welding area disposed in a second direction, the first direction being perpendicular to the second direction; The upper bridge power device welding area is provided with at least two, and the number of the lower bridge power device welding areas is the same as the number of the upper bridge power device welding areas. A first connection area (114) is provided between the welding areas of the lower bridge power device in the second direction, and the first connection area (114) is connected to the input negative electrode welding area; A second connection area (115) is provided between the upper bridge power device welding areas in the second direction, and the second connection area (115) is connected to all the lower bridge power device welding areas.

2. The substrate according to claim 1, characterized in that, The upper bridge power device welding area is symmetrically arranged with respect to the center line of the substrate in the second direction, and the second connection area (115) is provided between the symmetrically distributed upper bridge power device welding areas. The lower bridge power device welding area is symmetrically arranged with respect to the centerline of the substrate in the second direction, and the first connection area (114) is provided between the symmetrically distributed lower bridge power device welding areas.

3. The substrate according to claim 2, characterized in that, The upper bridge power device welding area is provided in two places, namely a first upper bridge power device welding area (116) and a second upper bridge power device welding area (117) arranged along the second direction. The first upper bridge power device welding area (116) and the second upper bridge power device welding area (117) are symmetrically arranged with respect to the center line of the substrate. The lower bridge power device welding area is provided in two places, namely a first lower bridge power device welding area (118) and a second lower bridge power device welding area (119) arranged along the second direction. The first lower bridge power device welding area (118) and the second lower bridge power device welding area (119) are symmetrically arranged with respect to the center line of the substrate. A first connection area (114) is provided between the first lower bridge power device welding area (118) and the second lower bridge power device welding area (119), and a second connection area (115) is provided between the first upper bridge power device welding area (116) and the second upper bridge power device welding area (117). The second connection area (115) is connected to the first lower bridge power device welding area (118) and the second lower bridge power device welding area (119) respectively.

4. The substrate according to any one of claims 1 to 3, characterized in that, In the first direction, the output welding area (111) and the second connection area (115) are spaced apart; or, The output welding area (111) is directly connected to the second connection area (115).

5. The substrate according to any one of claims 1 to 3, characterized in that, It also includes an insulating layer (12) and a thermally conductive layer (13), wherein the conductive layer (11), the insulating layer (12), and the thermally conductive layer (13) are stacked in sequence.

6. A power module, characterized in that, The substrate (1) as described in any one of claims 1 to 5 is provided with an input power terminal (2) in both the input positive electrode welding area and the input negative electrode welding area, and an output power terminal (3) is provided in the output welding area (111). At least one first power device (4) is provided in the welding area of ​​the lower bridge power device. The first pin of the first power device (4) is electrically connected to the welding area of ​​the lower bridge power device, and the second pin of the first power device (4) is electrically connected to the first connection area (114). At least one second power device (5) is provided in the upper bridge power device welding area. The first pin of the second power device (5) is electrically connected to the upper bridge power device welding area, and the second pin of the second power device (5) is electrically connected to the second connection area (115). The input positive electrode welding area is electrically connected to the upper bridge power device welding area through the first connector, and the second connection area is electrically connected to the output welding area (111).

7. The power module according to claim 6, characterized in that, The first connector includes jumper copper busbars (6), the number of jumper copper busbars (6) is the same as the number of the upper bridge power device soldering areas, and the jumper copper busbars (6) correspond one-to-one with the upper bridge power device soldering areas; The jumper bus (6) is positioned above the first power device (4). The first end of the jumper bus (6) is electrically connected to the input positive electrode welding area, and the second end of the jumper bus (6) is electrically connected to a welding area of ​​the upper bridge power device.

8. The power module according to claim 6, characterized in that, The second connection area (115) is electrically connected to the output welding area (111) via a second connector.

9. The power module according to claim 8, characterized in that, The second connector includes a shunt (7), the input end of which is electrically connected to the second connection area (115), and the output end of which is electrically connected to the output welding area (111).

10. The power module according to any one of claims 6 to 8, characterized in that, Each of the lower bridge power device welding areas is provided with two first power devices (4), and the two first power devices (4) are arranged along the first direction; Each of the upper bridge power device welding areas is provided with two second power devices (5), and the two second power devices (5) are arranged along the first direction.

11. The power module according to any one of claims 6 to 8, characterized in that, The first and second pins of the first power device (4) and the second power device (5) are surface mount pins, and the third pin of the first power device (4) and the second power device (5) is a pin.

12. The power module according to any one of claims 6 to 8, characterized in that, The substrate (1) is also provided with a signal terminal (8), which is a pin.

13. The power module according to any one of claims 6 to 8, characterized in that, The substrate (1) is also provided with a temperature sensor (9), and the pins of the temperature sensor (9) are pins.

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