A high-power Schottky rectifier tube

By setting heat-conducting plates on both sides of the Schottky rectifier package and optimizing the pin structure, the problem of low heat dissipation efficiency in traditional methods is solved, achieving efficient heat dissipation, ensuring device performance and stability, and making it suitable for a variety of application scenarios.

CN224936066UActive Publication Date: 2026-11-03SHENZHEN WORLD IND CO LTD
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Patent Information

Application Number
CN202522138953.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-10-09
Publication Date
2026-11-03
Estimated Expiration
2035-10-09

AI Technical Summary

Technical Problem

Traditional dual-chip Schottky rectifiers have low natural heat dissipation efficiency, which causes the chip junction temperature to rise rapidly, affecting performance and potentially damaging the device, thus limiting high-power applications.

Method used

Heat-conducting pads are placed on both sides of the Schottky rectifier package, and the chip is placed close to the heat-conducting pads to improve heat dissipation efficiency. Heat distribution is optimized through the pin mechanism, and multiple fins are used to increase the heat dissipation area and air circulation.

Benefits of technology

It effectively improves heat dissipation efficiency, prevents chip overheating, ensures stable device performance, and is suitable for the needs of different application scenarios.

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Abstract

The utility model discloses a kind of high-power schottky rectifier tube, including package, pin mechanism, heat conduction sheet and chip mechanism, wherein heat conduction sheet is fixedly installed in the outer wall left and right sides of package, the chip mechanism is set in the inside of package, the chip mechanism includes the schottky chip one and schottky chip two set in the inside of package, the pin mechanism upper end is set in the inside of package, lower end extends out the inside of package so that schottky rectifier tube is connected with circuit board in the mode of inserting, by being set heat conduction sheet in the left and right sides of package, heat generated by schottky rectifier tube work is conducted to environment dissipation by heat conduction sheet, by schottky chip one and schottky chip two are respectively set in the inside of package two ends and respectively close to two heat conduction sheets, on the one hand, prevent two chips too close, cause heat rises too fast, on the other hand, two chips are respectively cooled by the heat conduction sheet of its close side, greatly improve the heat dissipation efficiency.
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Description

Technical Field

[0001] This utility model relates to the field of heat dissipation device technology, and in particular to a high-power Schottky rectifier tube.

[0002] Background technology.

[0003] To further enhance the power handling capacity of Schottky rectifiers, a common design approach is to solder the cathodes of two Schottky chips together onto the same cathode pin, creating a reverse-connected series configuration for the two PN junctions. This dual-chip reverse-connected structure effectively improves the reverse breakdown voltage of the device. However, while increasing power, this dual-chip design also introduces significant heat dissipation challenges. The heat generated by the two chips during operation increases dramatically, significantly improving their thermal efficiency. Traditional natural heat dissipation relies primarily on natural convection and radiation, resulting in extremely low efficiency. Under high-power conditions, natural heat dissipation cannot effectively dissipate the heat generated by the chips, causing a rapid rise in junction temperature. Excessively high junction temperatures severely impact the performance of the Schottky rectifier, increasing the forward voltage drop, causing a sharp increase in reverse leakage current, and potentially leading to permanent device damage, greatly limiting the practical application of high-power Schottky rectifiers.

[0004] Therefore, this application provides a high-power Schottky rectifier. Utility Model Content

[0005] This invention provides a high-power Schottky rectifier tube that solves the problems of low heat dissipation efficiency and reverse leakage that exist in traditional dual-chip Schottky rectifier tubes that rely on natural heat dissipation.

[0006] This utility model provides a high-power Schottky rectifier diode, comprising: A Schottky rectifier includes a package, a pin mechanism, a heat-conducting plate, and a chip mechanism. The heat-conducting plate is fixedly installed on the left and right sides of the outer wall of the package. The chip mechanism is disposed inside the package and includes a Schottky chip one and a Schottky chip two disposed inside the package. The Schottky chip one is located on the right rear side inside the package, and the Schottky chip two is located on the left front side inside the package. The upper end of the pin mechanism is disposed inside the package, and the lower end extends out of the package so that the Schottky rectifier can be connected to the circuit board in a through-hole manner.

[0007] In a high-power Schottky rectifier tube according to one embodiment of the present invention, there are two heat-conducting plates. The two heat-conducting plates are fixedly installed on the outer walls of the left and right sides of the package body, and the outer walls of the two heat-conducting plates are integrally provided with multiple evenly distributed fins.

[0008] In a high-power Schottky rectifier according to an embodiment of the present invention, the pin mechanism includes a cathode pin one, a cathode pin two, and an anode pin disposed inside the package body, wherein the cathode pin one, cathode pin two, and anode pin are arranged indirectly in the front-to-back direction.

[0009] In a high-power Schottky rectifier according to an embodiment of the present invention, the cathode pin 1 and cathode pin 2 are both L-shaped structures at one end inside the package, and the outer wall of one side of cathode pin 1 and cathode pin 2 are respectively welded to the metal ends of Schottky chip 1 and Schottky chip 2. The anode pin is Z-shaped at one end inside the package, and its two ends are respectively connected to the semiconductor ends of Schottky chip 1 and Schottky chip 2.

[0010] The technical solution provided in this application embodiment may include the following beneficial effects: This application designs a high-power Schottky rectifier tube. By setting heat-conducting plates on both the left and right sides of the package, the heat generated by the Schottky rectifier tube during operation is conducted to the environment for dissipation through the heat-conducting plates. By setting Schottky chip one and Schottky chip two at both ends inside the package and respectively close to the two heat-conducting plates, on the one hand, it prevents the two chips from being too close, causing the heat to rise too quickly. On the other hand, the two chips are dissipated through the heat-conducting plate on their respective sides, which greatly improves the heat dissipation efficiency.

[0011] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0012] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 is a structural schematic diagram of a high-power Schottky rectifier provided in Embodiment 1 of the application; Figure 2 yes Figure 1 A cross-sectional view of a high-power Schottky rectifier diode; Figure 3 yes Figure 2 Connection diagram of the chip structure and pin structure; Figure 4 This is a schematic diagram of the structure of a high-power Schottky rectifier provided in Embodiment 2 of the application; Figure 5 yes Figure 4 A cross-sectional view of a high-power Schottky rectifier diode; Figure 6 yes Figure 5 Connection diagram of the chip mechanism and pin mechanism. Detailed Implementation

[0014] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0015] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0016] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0017] Example 1: like Figures 1 to 3 As shown, this application provides a high-power Schottky rectifier diode, comprising: The Schottky rectifier 100 includes a package 10, a pin mechanism 20, a heat-conducting plate 30, and a chip mechanism 40. The heat-conducting plate 30 is fixedly installed on the left and right sides of the outer wall of the package 10. The chip mechanism 40 is disposed inside the package 10. The upper end of the pin mechanism 20 is disposed inside the package 10, and the lower end extends out of the package 10 so that the Schottky rectifier 100 is connected to the circuit board in a through-hole manner.

[0018] By adopting the above technical solution, heat-conducting plates 30 are provided on both sides of the package 10. The heat generated by the Schottky rectifier tube 100 during operation is conducted to the environment for dissipation through the heat-conducting plates 30. By setting Schottky chip 1 41 and Schottky chip 2 42 at both ends inside the package 10 and close to the two heat-conducting plates 30 respectively, on the one hand, the two chips are prevented from being too close, which would cause the heat to rise too quickly. On the other hand, the two chips are dissipated through the heat-conducting plate 30 on their respective sides, which greatly improves the heat dissipation efficiency.

[0019] In one optional embodiment, there are two heat-conducting plates 30. The two heat-conducting plates 30 are fixedly installed on the outer walls of the left and right sides of the package body 10, respectively. The outer walls of the two heat-conducting plates 30 are integrally provided with multiple evenly distributed fins 31 to conduct heat to both sides of the Schottky rectifier tube 100, and the heat dissipation area is increased by setting the fins 31.

[0020] In an optional embodiment, the pin mechanism 20 includes a cathode pin 21, a cathode pin 22, and an anode pin 23 disposed inside the package 10, with the cathode pin 21, cathode pin 22, and anode pin 23 arranged indirectly in the front-back direction.

[0021] In one optional embodiment, both cathode pin 21 and cathode pin 22 are L-shaped structures at one end inside the package 10, and the outer wall of one side of cathode pin 21 and cathode pin 22 is welded to the metal ends of Schottky chip 41 and Schottky chip 42, respectively. Anode pin 23 is Z-shaped at one end inside the package 10, and its two ends are connected to the semiconductor ends of Schottky chip 41 and Schottky chip 42, respectively. On the one hand, the power of the Schottky rectifier is increased by using a common anode, and on the other hand, the pin is set on the same side as the chip it is connected to, which disperses the heat generated by the pin and improves the heat dissipation effect.

[0022] Example 2: like Figures 4 to 6As shown, to meet the different application scenarios of Schottky rectifier tubes, based on Embodiment 1, the largest side of the package 10 is arranged parallel to the horizontal plane. The heat-conducting plate 30 is fixedly installed on the upper surface of the package 10. Schottky chip 1 41 and Schottky chip 2 42 are respectively arranged on the left and right sides inside the package 10. One side of cathode pin 1 21 is soldered to the metal end of Schottky chip 1 41, and the other side is exposed from the left side of the package 10. One side of cathode pin 2 22 is soldered to the metal end of Schottky chip 2 42, and the other side is exposed from the left side of the package 10. The right side is exposed, and the two sides of the anode pin 23 are soldered to the semiconductor ends of Schottky chip 41 and Schottky chip 42 respectively. The other side is exposed from the front of the package 10. On the one hand, the mounting positions of Schottky chip 41, Schottky chip 42, cathode pin 21, cathode pin 22 and anode pin 23 are changed so that the Schottky rectifier tube 100 is connected to the circuit board in a surface mount manner to meet the needs of Schottky tubes in different application scenarios. On the other hand, the heat generated by the chip and pins is conducted and dissipated through the heat-conducting sheet 30.

[0023] In one optional embodiment, cathode pin 21, cathode pin 22 and anode pin 23 are all stepped structures located at one end of the outer side of the package 10. The anode pin 23 is a "U" shaped structure, and its long side is located at the upper end of the inner side of the package 10. The stepped structure has high stability, and placing the long side close to the heat-conducting sheet 30 facilitates heat dissipation on the long side.

[0024] In an optional embodiment, Schottky chip 41 and Schottky chip 42 are both located inside the upper part of the package 10, so that Schottky chip 41 and Schottky chip 42 are close to the heat-conducting sheet, which facilitates the rapid conduction of heat generated by Schottky chip 41 and Schottky chip 42 to the heat-conducting sheet.

[0025] In an optional embodiment, cathode pin 21, cathode pin 22, and anode pin 23 are all located at one end of the outer side of the package 10 and are lower than the lower wall of the package 10. After the Schottky rectifier is installed, the package 10 is lifted by the pins, so that a gap is created between the package 10 and the circuit board, allowing air to circulate at the bottom of the package and improving the heat dissipation effect at the bottom.

[0026] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection. They can refer to a mechanical connection or an electrical connection. They can refer to a direct connection or an indirect connection through an intermediate medium, and they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0027] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0028] The foregoing disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described above. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0029] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0030] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A high-power Schottky rectifier diode, characterized in that, include: A Schottky rectifier includes a package, a pin mechanism, a heat-conducting plate, and a chip mechanism. The heat-conducting plate is fixedly installed on the left and right sides of the outer wall of the package. The chip mechanism is disposed inside the package and includes a Schottky chip one and a Schottky chip two disposed inside the package. The Schottky chip one is located on the right rear side inside the package, and the Schottky chip two is located on the left front side inside the package. The upper end of the pin mechanism is disposed inside the package, and the lower end extends out of the package so that the Schottky rectifier can be connected to the circuit board in a through-hole manner.

2. The high-power Schottky rectifier diode according to claim 1, characterized in that, The number of heat-conducting sheets is two, and the two heat-conducting sheets are fixedly installed on the outer walls of the left and right sides of the package body, respectively. The outer walls of the two heat-conducting sheets are integrally provided with multiple evenly distributed fins.

3. A high-power Schottky rectifier diode according to claim 1, characterized in that, The pin mechanism includes a cathode pin 1, a cathode pin 2, and an anode pin disposed inside the package body, and the cathode pin 1, cathode pin 2, and anode pin are arranged indirectly in the front-to-back direction.

4. A high-power Schottky rectifier diode according to claim 3, characterized in that, The cathode pin 1 and cathode pin 2 are both L-shaped structures located inside the package, and the outer walls of cathode pin 1 and cathode pin 2 are respectively welded to the metal ends of Schottky chip 1 and Schottky chip 2. The anode pin is Z-shaped structure located inside the package, and its two ends are respectively connected to the semiconductor ends of Schottky chip 1 and Schottky chip 2.