Metal Oxide Semiconductor Field Effect Transistor Pressing Plate (MOS Transistor)
CN309416181SActive Publication Date: 2025-08-01西安星源博锐新能源技术有限公司
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Patent Information
- Application Number
- CN202430699958.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-05
- Publication Date
- 2025-08-01
- Estimated Expiration
- 2039-11-05
Smart Images
Figure 000007_ABST
Abstract
1. Name of the Design Product: Gold Oxide Half - Field Effect Transistor Pressing Plate (MOS Transistor). 2. Use of the Design Product: For the fixed installation and crimping of gold oxide half - field effect transistors. 3. Design Key Points of the Design Product: Lies in the shape. 4. Picture or Photograph that Best Shows the Design Key Points: Perspective View 1.
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