Ion beam etcher
CN309449996SActive Publication Date: 2025-08-19SUZHOU YOULUN VACUUM EQUIP TECH CO LTD
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Patent Information
- Application Number
- CN202430629854.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-08
- Publication Date
- 2025-08-19
- Estimated Expiration
- 2039-10-08
Smart Images
Figure 000007_ABST
Abstract
1. The name of the product under this design: Ion beam etcher. 2. Purpose of the product of this design: to physically etch the surface of the wafer after film formation by ion beam bombardment, thereby reducing the surface roughness of the wafer after film formation. 3. The key design point of this design product lies in the combination of shape and pattern. 4. The picture or photo that best illustrates the design points: Stereoscopic drawing 1.
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