Power semiconductor module, circuit arrangement and electrical system of a motor vehicle

Abstract

Power semiconductor module, wherein the power semiconductor module (13) has a number of power terminals (L1, L2, L3, L4, L5, L6, L7) and a number of control and auxiliary terminals (H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, H14), wherein the power semiconductor module (13) has 7 power terminals (L1-L7) and 12 or 14 control and auxiliary terminals (H1-H14).

Description

The invention relates to a power semiconductor module, a circuit arrangement and an electrical system of a motor vehicle. In electric or hybrid vehicles, the electric motors that power these vehicles are typically controlled by power electronics. The power electronics, or power electronic components, convert electrical energy stored in a high-voltage battery into alternating currents and / or alternating voltages to drive the electric motor, for example, a three-phase, permanent magnet synchronous machine. The power electronic components, particularly the electrical or electronic switching elements such as MOSFETs or IGBTs, are controlled by a control unit and a driver stage. The control unit, which may be a microcontroller, generates an input signal for the driver stage. The driver stage, in turn, generates input signals, such as gate voltages, for the electrical or electronic switching elements.The electrical system of electric or hybrid vehicles also includes an on-board electrical system, to which, for example, other control units of the electric or hybrid vehicle are connected. This on-board electrical system is typically powered by an on-board battery. Furthermore, the electrical system also includes a charger, which allows the high-voltage battery to be charged from an external power supply. The electrical system of a motor vehicle therefore contains a multitude of power electronic components that ensure the individual functionalities described above. It is common practice to use specific power semiconductor modules for each desired function, such as the functionality of a three-phase inverter. In their concrete monolithic form, these modules have very limited power variability. This means that it may be necessary to develop a suitable power semiconductor module individually to supply an electric motor with the required power. These individual power semiconductor modules can have surface areas of up to 10,000 mm². Individual power semiconductor modules are also typically developed for the DC-DC conversion and charging functions.The DC-DC conversion function serves to transfer electrical energy from the traction battery to the vehicle battery, whereby a DC-DC conversion is performed from the high voltage of the traction battery to the low voltage of the vehicle battery. This DC-DC conversion function can be implemented using a DC-DC conversion branch, which will be explained later. Existing power semiconductor modules for the DC-DC conversion function or the charging function have a footprint of approximately 1000 mm². The individually manufactured power semiconductor modules typically have different heights and interconnection technologies. In practice, this leads to their implementation on multiple circuit boards, which increases development and production costs and reduces functional reliability. Mounting and cooling the individual power semiconductor modules also requires individual effort in each case, further increasing design and production costs. EP 1 467 407 B1 discloses a power semiconductor module with a base plate or for direct mounting on a heat sink. The power semiconductor module has externally leading connection elements for load and auxiliary contacts, with at least part of the auxiliary contact connection elements being formed inside the power semiconductor module. Power semiconductor modules with a number of power terminals are known from US patents 2007 / 0109715 A1 and 2008 / 0049478 A1. The power semiconductor module is an inverter for controlling an electric machine and is connected to a DC link capacitor or a traction battery. From DE 10 2005 061 016 A1, a power semiconductor module is known comprising one or more power semiconductor components arranged on a power substrate and a logic semiconductor chip provided for controlling the power semiconductor components. The logic semiconductor chip is arranged on a bonding substrate that is galvanically isolated from the power substrate, with the two substrates being connected via bond wires. From WO 2010 / 115867 A1, an operating arrangement for use in an electrically powered vehicle is known, which has at least one electric drive and at least one energy storage device. Furthermore, the operating arrangement includes a conversion or... Inverter and a coil arrangement for inductive transmission of electrical energy, wherein a capacitor for resonance tuning is provided in series with the coil arrangement. The technical challenge lies in creating a power semiconductor module that allows for the flexible and adaptable implementation of multiple functionalities within the electrical system of an electric or hybrid vehicle. Furthermore, the technical challenge is to develop a circuit design that, in combination with the power semiconductor module, ensures high power variability. Finally, the technical challenge is to create an electrical system for an electric or hybrid vehicle that minimizes the material required for power semiconductor modules. The solution to the technical problem arises from the objects having the features of claims 1, 7 and 9. Further advantageous embodiments of the invention arise from the dependent claims. A power semiconductor module, in particular a power semiconductor module for an electric or hybrid vehicle, is proposed. According to the invention, the power semiconductor module has a number of power connections and a number of control and auxiliary connections. The proposed power semiconductor module advantageously enables the fulfillment of various required functionalities in an electrical system of an electric or hybrid vehicle using a single (standardized) power semiconductor module. This module can be equipped with various circuit arrangements, which can also be referred to as functional units. These circuit arrangements comprise at least one, but preferably several, electrical or electronic elements and are advantageously electrically contactable or switchable via the power terminals and control and auxiliary terminals. In this context, power connections refer to electrical connections through which electrical power in the kW range can be transmitted. Control and auxiliary connections, on the other hand, can only transmit electrical power that is lower than the maximum power transmittable via the power connections and is specifically in the mW or watt range. The power semiconductor module according to the invention has seven power terminals and twelve or fourteen control and auxiliary terminals. This allows the power semiconductor module according to the invention to be advantageously equipped with one of the circuit arrangements (functional units) described below, wherein electrical or electronic elements of these circuit arrangements can be electrically contacted or connected via the power terminals and control and auxiliary terminals. In a first embodiment, the power semiconductor module according to the invention can be equipped with a circuit arrangement of a three-phase inverter. The three-phase inverter comprises three half-bridges, each half-bridge having a so-called high-side switch and a so-called low-side switch. The high-side switch and / or low-side switch can be implemented as a MOSFET or IGBT. Furthermore, a diode can be connected antiparallel to each of the high-side and / or low-side switches. In the first embodiment, the seven power connections are divided into four input-side power connections and three output-side power connections. A first input-side power connection is electrically connected to a high-voltage battery or an intermediate circuit capacitor, thereby providing a high-voltage voltage or traction voltage at the first input-side power connection.A second input power terminal is connected to ground. A third input power terminal can be connected to the high-voltage battery or the DC link capacitor, with the high-voltage or traction voltage also present at this third input power terminal. A fourth input power terminal can be connected to ground. A first output power terminal is connected to the first phase of a three-phase electric motor. A second output power terminal is connected to the second phase of the electric motor, and a third output power terminal is connected to the third phase of the electric motor. Six of the fourteen control and auxiliary terminals are each connected to outputs of the driver stages of the high-side switches or the low-side switches, respectively.Three additional control and auxiliary terminals are each electrically connected to the three previously described output-side power terminals and serve to detect phase voltages of the electric motor, for example, by connecting suitable voltage sensors to these control and auxiliary terminals. Three further control and auxiliary terminals are each connected to a ground-side output of the low-side switches and serve to detect the corresponding voltages of the individual half-bridges, for example, using suitable voltage sensors, in order to detect half-bridge defects. The two remaining control and auxiliary terminals are each connected to terminals of a temperature-dependent resistor, which serves to detect the temperature of the three-phase inverter.An embodiment of the first variant without temperature measurement, i.e., without the two remaining control and auxiliary connections, is also conceivable. Using the three-phase inverter, power can be transferred from the high-voltage battery to the electric motor in a motor operating mode, and power can be transferred from the electric motor to the high-voltage battery in a generator operating mode. In a second embodiment, the power semiconductor module according to the invention can be equipped with two H-bridges. Each H-bridge comprises two half-bridges, with each half-bridge having a high-side switch and a low-side switch. The first H-bridge can serve for power factor correction and voltage rectification, while the second H-bridge can serve for voltage conversion. Both H-bridges are arranged in a charging branch of an electrical system of the electric or hybrid vehicle. This will be explained in more detail later. It is also possible that the first H-bridge serves an alternating current direction in a DC-DC converter branch and the second H-bridge serves a voltage rectification stage in the previously mentioned charging branch of the electrical system. This will also be explained in more detail later. In the second variant, the seven power connections are divided into two input-side and five output-side power connections. When the power semiconductor module is equipped with two H-bridges, the first input-side power connection serves as an electrical connection between the two high-side switches of the first H-bridge and an external power supply. A second input-side power connection serves as a ground connection, which is electrically connected, for example, via shunts, to the ground connection of the two low-side switches of the two half-bridges of the first H-bridge and the second H-bridge. A third input-side power connection serves as an electrical connection between the two high-side switches of the second H-bridge and a high-voltage battery. The first output-side power connection serves as an electrical connection to the center potential of the first half-bridge of the first H-bridge.The center potential here refers to the potential between the high-side and low-side switches. Similarly, a second output power terminal connects to the center potential of a second half-bridge of the first H-bridge. Likewise, a third output power terminal connects to the center potential of a first half-bridge of the second H-bridge, and a fourth output power terminal connects to the center potential of a second half-bridge of the second H-bridge. Furthermore, eight control and auxiliary terminals connect to the control inputs of the high-side and low-side switches of the first and second H-bridges, allowing, for example, adjustment of the gate voltages of the power switches.A ninth and a tenth control and auxiliary terminal serve to tap a voltage drop across the aforementioned shunt, which is arranged between the ground terminals of the low-side switches of the first H-bridge and ground potential. Similarly, an eleventh and a twelfth control and auxiliary terminal serve to tap a voltage drop across a shunt located between the ground terminals of the low-side switches of the second H-bridge and ground potential. A thirteenth and a fourteenth control and auxiliary terminal serve to tap a temperature-dependent resistor located in the power semiconductor module. The temperature of the power semiconductor module is measured via the thirteenth and fourteenth control and auxiliary terminals by detecting and evaluating the tapped voltage.It is also conceivable to have an embodiment of the second variant without temperature measurement, i.e. without the thirteenth and a fourteenth control and auxiliary connection. The preceding assignment of the power connections and the control and auxiliary connections was described for the arrangement of the first and second H-bridge in a charging branch of the electrical system of the electric or hybrid vehicle, wherein the first H-bridge serves for voltage reversal and power factor correction and the second H-bridge serves for voltage reversal. In the arrangement of the first H-bridge as a voltage inverter in a DC-DC conversion branch of the electrical system, the aforementioned first input-side power connection is electrically connected to a high-voltage battery. The third input-side power connection is connected to a voltage output of a voltage transformation element, which is also arranged in the charging branch and generates an output voltage with a voltage potential equal to that of the high-voltage battery. In a third variant, the power semiconductor module can be equipped with two electrical or electronic switches, in particular MOSFETs, which serve for voltage rectification. In this variant, the power semiconductor module equipped in this way is preferably arranged in the DC-DC converter branch of the electrical system of the electric or hybrid vehicle. Here, a first, a second, and a third output terminal of the power semiconductor module can be connected to an on-board battery. These terminals serve as an electrical connection between the power semiconductor module, configured as a rectifier, and the on-board battery.A first and a second input-side power terminal are electrically connectable to a first voltage output of the voltage transformation element, and a third and a fourth input-side power terminal are electrically connectable to a second voltage output of the voltage transformation element in the DC-DC converter branch. A first control and auxiliary terminal serves as an electrical connection to a control input of the first electrical or electronic switch, and a second control and auxiliary terminal serves as an electrical connection to a control input of the second electrical or electronic switch. In particular, the gate voltages of the MOSFETs can be set using the first and second control and auxiliary terminals.A third and a fourth control and auxiliary connection are used to detect the output voltage of the two electrical or electronic switches, in particular the source voltage of the two MOSFETs. A fifth and a sixth auxiliary connection are used to detect the input voltage of the electrical or electronic switches, in particular the drain voltage of the two MOSFETs. A seventh and an eighth control and auxiliary connection, as explained above, are used to tap the voltage across a temperature-dependent resistor for measuring the temperature of the power semiconductor module according to the invention. The remaining control and auxiliary connections remain unconnected in the described configuration. This advantageously results in the power semiconductor module according to the invention being modularly equipped with various electrical or electronic functional units. The respective electrical or electronic elements of the functional unit, for example, the three-phase inverter or the two H-bridges, can be arranged within the power semiconductor module. Chips can also be arranged in or on the power semiconductor module according to the invention, with the electrical or electronic elements of the individual functional units mounted on these chips. The uniform and standardized design of the power semiconductor module for the various assembly methods advantageously enables a uniform construction and a uniform mounting of the power semiconductor module in the vehicle. This advantageously reduces development and manufacturing costs.This results in a geometrically uniform power semiconductor module for different functionalities in an electric or hybrid vehicle. As mentioned previously, this enables uniform connection technology, mounting, and cooling for all power electronics functionalities, thus reducing the complexity of the electrical system in the electric or hybrid vehicle. In another embodiment, the power semiconductor module is shaped like a trough. Here, an internal volume of the power semiconductor module is defined or bounded by at least two trough walls and a trough base. The at least two trough walls are arranged on opposite sides of the trough base. The trough walls form a lateral boundary of the internal volume of the power semiconductor module. It is conceivable that the trough walls do not completely enclose the trough base, meaning that the internal volume is open on at least one side. The formation of an internal volume allows for a precisely defined spatial arrangement of functional units within the power semiconductor module. For example, circuit boards or printed circuit boards on which the functional units or their electrical or electronic components are arranged can be inserted into the internal volume and, if necessary, additionally secured.It is also conceivable that functional units can be inserted between the limiting walls of the trough from an open side of the inner volume. This advantageously simplifies the arrangement and fixing of functional units and their electrical or electronic components. Furthermore, it is advantageous that elements for cooling the functional units located within such a standardized power semiconductor module can be arranged in a standardized or normed manner. The power semiconductor module is preferably made of plastic. In another embodiment, the basin base is rectangular. In this embodiment, the power semiconductor module also has a rectangular shape. As previously explained, the at least two basin walls are arranged on opposite sides of the basin base. The remaining sides of the internal volume can either be enclosed by basin walls or remain open. Three power connections are arranged on the first basin wall. These power connections can be in the form of tongue contacts that project outwards from the first basin wall in relation to a module body formed by the basin base and the basin walls. The three power connections arranged on the first basin wall are spaced apart from each other along the first basin edge at a predetermined distance.Between each pair of power connections located on the first tank wall, control and auxiliary connections are arranged. These two control and auxiliary connections are spaced apart from each other along the first tank wall at a predetermined distance. The predetermined distances between the power connections and the control and auxiliary connections located between the power connections on the first tank wall are selected to ensure the required creepage and clearance distances between the individual power connections, between the individual control and auxiliary connections, and also between the power connections and the control and auxiliary connections.This advantageously results in the possibility of contacting the power semiconductor module and the functional units arranged therein on one side of the power semiconductor module, advantageously maintaining a desired voltage withstand capability. In a further embodiment, four power terminals are arranged on a second wall of the cradle, with the power terminals arranged on the second wall being spaced apart from each other at a predetermined distance along the second cradle edge. The power terminals can be designed as tongue contacts that project outwards from the second wall of the cradle relative to the module body. Between each pair of power terminals on the second wall of the cradle, four control and auxiliary terminals are arranged, with each of these four control and auxiliary terminals being spaced apart from each other at a predetermined distance along the second wall of the cradle. This advantageously allows the power semiconductor module and any functional units arranged therein to be contacted from two opposite sides, thus ensuring easy access and wiring.Similarly, compliance with required creepage and clearance distances is advantageously ensured by the predetermined distances between the power connections and the control and auxiliary connections along the second trough wall. In a further embodiment, the control and auxiliary connections are configured as L-shaped pins, with a first leg of a pin arranged in a plane parallel to or equal to a plane in which an inner surface of the tray base is located. Furthermore, a second leg of a pin is arranged perpendicular to the inner surface of the tray base. The first leg of the pin can also be arranged perpendicular to an outer surface of a tray wall. This advantageously results in a compact arrangement of power connections as well as control and auxiliary connections on the side walls of the power semiconductor module.In particular, the power terminals of the power semiconductor module can be contacted or connected from any two opposite sides, with the control and auxiliary terminals being contacted or connected from above with respect to the inner surface of the trough base. This advantageously results in further simplified accessibility and connection of the power semiconductor module according to the invention. In a further embodiment, the length of the first legs of at least two adjacent pins differs. In this embodiment, the second legs of the adjacent pins are spaced apart with respect to a trough wall along the trough wall at a predetermined distance and in a direction perpendicular to an outer surface of the trough wall at a further predetermined distance. This advantageously results in improved compliance with required creepage and / or clearance distances, thereby achieving improved dielectric strength of the power semiconductor module according to the invention. Preferably, the previously defined module body of the power semiconductor module has an area of ​​2500 mm2, wherein the width of the module body can be 50 mm and the length of the module body can be 50 mm. A further proposal is a capacitor module comprising at least four output-side power connections, at least two input-side power connections, and an element with a predetermined capacitance. At least two of the four output-side power connections are electrically connectable to a power connection of a power semiconductor module according to the invention. Preferably, the capacitor module comprises six output-side power connections, with four output-side power connections each being electrically connectable to a power connection of a power semiconductor module. Preferably, the capacitor module can be arranged at a predetermined distance from a second well wall of the power semiconductor module, with, for example, tongue-shaped power connections of the capacitor module contacting tongue-shaped power connections of the second well wall.The power semiconductor module is preferably equipped with a functional unit designed as a three-phase inverter. This advantageously allows the capacitor module to function as an intermediate circuit capacitor upstream of the three-phase inverter. This results in a simple, modular design of electrical functional units or electrical elements for operating an electric motor in an electric or hybrid vehicle. A high-voltage battery can preferably be connected to the two input-side power terminals of the capacitor module. For this purpose, the capacitor module can have openings in one wall through which electrical connection elements from the high-voltage battery can be inserted into a housing of the capacitor module and electrically connected to the input-side power terminals of the capacitor module. Furthermore, the at least two remaining output-side power terminals of the capacitor module can each be electrically connected to the input-side power terminals of another capacitor module. This advantageously allows several capacitor modules to be connected electrically in parallel, thereby enabling the desired DC link capacitance to be achieved through modular interconnection. Preferably, two capacitor modules can be electrically connected via a plug connector. For this purpose, the two remaining output-side power terminals can be tongue-shaped, with the two input-side power terminals of another capacitor module being designed such that the two additional output-side power terminals can be plugged into these input-side power terminals. As described above, the additional capacitor module can have openings in a wall of the additional capacitor module through which, for example,The tongue-shaped output-side power connections of the capacitor module can be inserted into a housing of the further capacitor module and brought into electrical contact with the input-side power connections of the further capacitor module. A further circuit arrangement is proposed. The circuit arrangement comprises at least one power semiconductor module according to the invention and at least one capacitor module. The capacitor module comprises at least four output-side power connections and at least two input-side power connections, as well as an element with a predetermined capacitance. At least two of the four output-side power connections of the capacitor module are each electrically connected to a power connection of the power semiconductor module. This advantageously results in a circuit arrangement built from modular components, namely a proposed power semiconductor module and a proposed capacitor module, which can be used to operate an electric motor in an electric or hybrid vehicle. Preferably, the capacitor module comprises six output-side power terminals, wherein four output-side power terminals are each electrically connected to a power terminal of the power semiconductor module. In a further embodiment, the circuit arrangement comprises a first power semiconductor module according to the invention and at least one further power semiconductor module according to the invention, as well as a first capacitor module and at least one further capacitor module. Here, four output-side power terminals of the first capacitor module are electrically connected to four power terminals of the first power semiconductor module. Furthermore, four output-side power terminals of the at least one further capacitor module are electrically connected to four power terminals of the at least one further power semiconductor module. Finally, two remaining output-side power terminals of the first capacitor module are electrically connected to two input-side power terminals of the at least one further capacitor module.The proposed circuit arrangement advantageously allows for simple adjustment of the power output, e.g., of a three-phase inverter. For example, a three-phase inverter and its associated DC link capacitor for an electric motor with a predetermined rated power can be modularly constructed using the assembled power semiconductor modules and capacitor modules. This allows for easy adaptation to different rated power outputs. For instance, if a functional unit designed as a three-phase inverter, which can be arranged on the power semiconductor module according to the invention, has a predetermined rated power of, e.g., 20 kW, then the circuit arrangement according to the invention allows for the modular construction of a combined three-phase inverter with power outputs of 20 kW, 40 kW, 60 kW, etc. For this purpose, for example, all first half-bridges of the functional units arranged on different power semiconductor modules can be connected electrically in parallel. Likewise, second and third half-bridges of the functional units arranged on different power semiconductor modules can be connected electrically in parallel. However, if, for example, three power semiconductor modules according to the invention are electrically connected to one another according to the proposed circuit arrangement, the three half-bridges of the inverter arranged in the first power semiconductor module can be configured as a combined first half-bridge, and analogously, all half-bridges of the three-phase inverter arranged on a second power semiconductor module can be configured as a second combined half-bridge, and all half-bridges of a three-phase inverter arranged on a third power semiconductor module can be configured as a combined third half-bridge of a combined three-phase inverter. In this case, all high-side switches and low-side switches of the three-phase inverter arranged on the first power semiconductor module can be switched in parallel in the same manner. Similarly, all high-side switches and low-side switches of the inverters on the second and third power semiconductor modules can also be configured as a combined third half-bridge.The three-phase inverter arranged in the third power semiconductor module can be connected in parallel in the same manner. The DC link capacitance can also be adjusted according to the desired power of the electric motor by means of the proposed capacitor module and the proposed circuit arrangement. A further proposed electrical system for an electric or hybrid vehicle is described. The electrical system comprises at least one charging branch and one DC / DC conversion branch. Electrical power can be transferred from an external power grid to a high-voltage battery via the charging branch. Electrical power can be transferred between the high-voltage battery and an on-board battery via the DC / DC conversion branch. According to the invention, a first power semiconductor module is equipped with a first and a second H-bridge. A second power semiconductor module is also equipped with a first and a second H-bridge. The first H-bridge of the first power semiconductor module is arranged in the charging branch, wherein the first H-bridge of the first power semiconductor module is connectable to the external power grid on its input side and to a capacitive element on its output side.The first H-bridge of the first power semiconductor module performs power factor correction of an external voltage, for example, for charging the high-voltage battery, and rectifies this voltage. The second H-bridge of the first power semiconductor module is also located in the charging branch. Its input is connected to the capacitive element, and its output is connected to a voltage transformation device for the charging branch. The second H-bridge of the first power semiconductor module enables alternating current conversion. Furthermore, the first H-bridge of the second power semiconductor module is located in the DC-DC conversion branch, with its input connected to the high-voltage battery and its output to a voltage transformation device for the DC-DC conversion branch.The first H-bridge of the second power semiconductor module enables alternating current conversion. The second H-bridge of the second power semiconductor module is located in the charging circuit. Its input is connected to the voltage transformation circuitry of the charging circuit, and its output is connected to the high-voltage battery. Rectification is also possible using the second H-bridge of the second power semiconductor module. In a further embodiment, the electrical system can include a third power semiconductor module, wherein the third power semiconductor module is arranged in the DC-DC conversion branch. The third power semiconductor module is equipped with a functional unit designed as a rectifier, for example, with two MOSFETs. The rectifier is connected on its input side to a voltage output of the DC-DC conversion branch's voltage transformation device. On its output side, the rectifier is electrically connected to the vehicle's electrical system battery. The proposed electrical system advantageously enables the provision of necessary functionalities in an electric or hybrid vehicle, such as charging and DC / DC conversion. The necessary functional units are advantageously integrated, resulting in a space-saving and standardized design. Consequently, the electrical system is advantageously cost-effective and, through the use of uniform power semiconductor modules, simple in its construction. The invention is explained in more detail with reference to several exemplary embodiments. The figures show: Fig. 1 a schematic block diagram of an electric vehicle, Fig. 2 a perspective view of a power semiconductor module, Fig. 3 a perspective view of a capacitor module not shown on its own, Fig. 4 a schematic circuit diagram of a capacitor module not shown on its own, Fig. 5 a first circuit arrangement, Fig. 6 a second circuit arrangement, Fig. 7 a top view of a power semiconductor module, Fig. 8 a schematic circuit diagram of a power semiconductor module equipped with a three-phase inverter, Fig. 9 a schematic circuit diagram of a power semiconductor module equipped with two H-bridges, Fig. 10 a schematic circuit diagram of a power semiconductor module equipped with two MOSFETs, Fig. 11 a schematic block diagram of a charging branch, and Fig.12 a schematic block diagram of a DC voltage conversion branch. In the following, identical reference symbols denote elements with the same or similar technical characteristics. Figure 1 shows a schematic block diagram of the electrical system 1 of an electric vehicle 2. The electrical system 1 comprises a high-voltage battery or traction battery 3, a battery management unit 4, an inverter 5, a DC / DC converter 6, an electrical system 7, a control unit 8 for an electric motor 9, and the electric motor 9 itself. Figure 1 also shows an interface 10 to an external power grid, from which the traction battery 3 can be charged via a charging control unit 11. The figure illustrates that the traction battery 3 is electrically connected to the inverter 5 via electrical lines 12. The inverter 5 generates alternating currents and voltages from the DC supply voltage provided by the traction battery 3.The inverter 5 can be configured as a three-phase inverter. In this case, phase voltages and phase currents of the electric motor 9 are regulated by means of electronic switches, e.g., IGBTs, as shown in Fig. 8, such that the electric motor 9 generates, for example, a desired torque. Figure 2 shows a power semiconductor module 13 according to the invention. The power semiconductor module 13 comprises seven power terminals L1, L2, ..., L7. Furthermore, the power semiconductor module 13 comprises fourteen control and auxiliary terminals H1, H2, ..., H14. The power semiconductor module 13 is designed in a trough shape. An internal volume of the power semiconductor module 13 is bounded or formed by a first trough wall 14 and a second trough wall 15, as well as a trough bottom 16. A first power terminal L1, a second power terminal L2, a third power terminal L3, and a fourth power terminal L4 are arranged on the first trough wall 14, wherein the power terminals L1, L2, L3, L4 arranged on the first trough wall 14 are spaced apart from each other along the first trough wall 14 at a predetermined distance.Between each pair of power connections L1, L2, L3, L4 arranged on the first wall of the tub 14, two control and auxiliary connections H9, H10, ..., H14 are arranged. These pairs of control and auxiliary connections H9, H10, ..., H14 are also spaced apart from each other at a predetermined distance along the first wall of the tub 14. Similarly, a fifth power connection L5, a sixth power connection L6, and a seventh power connection L7 are arranged on the second wall of the tub 15. The power connections L5, L6, L7 on the second wall of the tub 15 are spaced apart from each other at a predetermined distance along the second wall of the tub 15. Between each pair of power connections L5, L6, L7 on the second wall of the tub 15, four control and auxiliary connections H1, H2, ..., H8 are arranged at predetermined distances from each other along the second wall of the tub 15. The control and auxiliary connections H1, H2, ...The control and auxiliary connections H1, H2, ..., H14 are L-shaped. A first leg of the control and auxiliary connections H1, H2, ..., H14 is arranged in a plane parallel to a plane in which an inner surface 17 of the tub bottom 16 is located. A second leg of the control and auxiliary connections H1, H2, ..., H14 is arranged perpendicular to the inner surface 17 of the tub bottom 16. The lengths of the first legs of at least two adjacent control and auxiliary connections H1, H2, ..., H14 differ. For example, the length of a first leg of a first control and auxiliary connection H1 is shorter than the length of a first leg of a second control and auxiliary connection H2, which is adjacent to the first control and auxiliary connection H1.The length of the first leg of a third control and auxiliary connection H3 is shorter than the length of the first leg of the second control and auxiliary connection H2, and in particular, equal to the length of the first leg of the first control and auxiliary connection H1. The power semiconductor module is shown to be rectangular. The rectangular base 16 is bounded on one side by the first wall 14 and on the other by the second wall 15, with the sides facing each other. The internal volume of the power semiconductor module 13 is open on the third and fourth sides of the base 16. Figure 3 shows a capacitor module 18. This figure shows that the capacitor module 18 has six output-side power terminals L1C, L2C, L3C, L4C, L5C, L6C. The capacitor module 18 also includes two input-side power terminals L7C, L8C and an element 19 with a predetermined capacitance, which are shown in Figure 4. Figure 4 shows a schematic circuit diagram of a capacitor module 18. The six output power terminals L1C, L2C, ..., L6C shown in Figure 3 are depicted here. The first output power terminal L1C, the third output power terminal L3C, and the fifth output power terminal L5C all have the same first voltage potential. Similarly, the second, fourth, and sixth output power terminals L2C, L4C, and L6C also have the same second voltage potential. Figure 4 also shows the input power terminals L7C and L8C. The first input power terminal L7C has the same voltage potential as the first, third, and fifth output power terminals L1C, L3C, and L5C.A second input-side power terminal L8C has the same voltage potential as the second, fourth, and sixth power terminals L2C, L4C, and L6C. Also shown is element 19 with a predetermined capacitance, which is electrically connected between the first and second voltage potentials. Figure 5 shows a circuit arrangement 20 according to the invention. The circuit arrangement comprises a power semiconductor module 13 and a capacitor module 18. It is shown that a first output-side power terminal L1C of the capacitor module 18 is electrically connected to a fourth power terminal L4 of the power semiconductor module 13. Similarly, a second output-side power terminal L2C of the capacitor module 18 is connected to a third power terminal L3 of the power semiconductor module 13. Furthermore, a third and a fourth output-side power terminal L3C, L4C of the capacitor module 18 are each connected to a second and a first power terminal L2, L1 of the power semiconductor module 13, respectively. The power semiconductor module 13 shown can be equipped with a three-phase inverter, which is shown, for example, in Figure 8.By electrically connecting the capacitor module 18 to the power semiconductor module 13 equipped with a three-phase inverter, a DC link capacitor in the form of an element 19 with a predetermined capacitance can be easily connected upstream of the three-phase inverter. This allows for the simple formation of an electrical system for power transmission between a traction battery 3 and an electric motor 9. Figure 6 shows a further circuit arrangement 21. Here, a first power semiconductor module 13-1 is electrically connected to a first capacitor module 18-1, as shown in Figure 5. Similarly, a second power semiconductor module 13-2 is electrically connected to a second capacitor module 18-2, and a third power semiconductor module 13-2 is electrically connected to a third capacitor module 18-3. Furthermore, in the further circuit arrangement 21, the first capacitor module 18-1 is electrically connected to the second capacitor module 18-2, and the second capacitor module 18-2 is electrically connected to the third capacitor module 18-3. For this purpose, for example, a fifth output-side power terminal L5C of the first capacitor module 18-1 is electrically connected to a first input-side power terminal L7C of the second capacitor module 18-2, preferably by plugging it in.Furthermore, a sixth output-side power terminal L6C of the first capacitor module 18-1 is electrically connected to a second input-side power terminal L8C of the second capacitor module 18-2. For this purpose, corresponding openings can be arranged in a housing of the second capacitor module 18-2, through which the fifth and sixth output-side power terminals L5C and L6C of the first capacitor module 18-1 can be inserted into the housing of the second capacitor module 18-2. This shows that the power terminals L1, L2, ..., L7 of the power semiconductor module 13 and the output power terminals L1C, L2C, ..., L6C of the capacitor module 18 are designed as tongue-shaped contacts. These tongue-shaped contacts have a hole at one tip. An electrical connection between an output power terminal L1C, L2C, ..., L4C of a capacitor module 18 and a power terminal L1, L2, L3, L4 of a power semiconductor module 13 is established by arranging the tongue-shaped power terminals one above the other such that the holes in the tips of the tongues align. The input power terminals L7C, L8C of a capacitor module 18 can be designed such that the corresponding output power terminals L5C, L6C of another capacitor module 18 can be plugged into these input power terminals L7C, L8C.The input-side power connections L7C, L8Cz, e.g., can be designed as clamping contacts. These provide, in addition to an electrical connection, a detachable mechanical connection between the capacitor modules 18. Fig. 7 shows a top view of the power semiconductor module 3 shown in Fig. 2. Figure 8 shows a schematic circuit diagram of a three-phase inverter 22. The three-phase inverter 22 represents a functional unit with which, for example, a power semiconductor module 13, shown in Figure 7, can be fitted. In the circuit diagram of the three-phase inverter 22, the power terminals L1, L2, ..., L7 and the control and auxiliary terminals H1, H2, ..., H14 are designated, which correspond to the power terminals L1, L2, ..., L7 and the control and auxiliary terminals H1, H2, ..., H14 shown in Figures 7 and 2. The three-phase inverter 22 comprises three half-bridges 23. Each half-bridge 23 includes a high-side switch 24 designed as an IGBT and a low-side switch 25 designed as an IGBT. For the sake of simplicity, only the high-side switch 24 and the low-side switch 25 of a half-bridge 23 are designated with reference symbols.Furthermore, the power semiconductor module 13 is equipped with a temperature-dependent resistor 26. The voltage drop across this resistor 26 can be measured via a third and a fourth control and auxiliary connection H3 and H4. This advantageously allows the temperature of the power semiconductor module 13, which is equipped with a three-phase inverter 22, to be detected and evaluated. For the circuit diagram of the three-phase inverter 22 shown, a second and a fourth power terminal L2, L4 are connectable to or can be connected to a voltage source, in particular to a DC link capacitor (not shown) or, for example, a traction battery 3 as shown in Fig. 1. A first supply voltage (high voltage) is therefore present at the second and fourth power terminals L2, L4. A first and a third power terminal L1, L3 are connected or connectable to a ground potential, in particular the vehicle ground. The fifth, sixth, and seventh power terminals L5, L6, L7 are each connected to phases of an electric motor 9. The control and auxiliary terminals H2, H9, H6, H11, H13, H8 serve to adjust the gate voltages of the high-side switches 24 and low-side switches 25, which are designed as IGBTs.Control and auxiliary connections H10, H12, and H14 are used to detect phase voltages of the electric motor 9. Control and auxiliary connections H1, H5, and H7 are used to detect a ground-side output voltage of the low-side switches 25, in this case an emitter voltage or emitter potential of the low-side switches 25. The diagram shows that the second power connection L2 supplies two half-bridges 23 with the first supply voltage, with the first power connection L1 being connected to the emitter sides of the low-side switches 25 of these two half-bridges 23. The fourth power connection L4 supplies the remaining half-bridge 23 with the first supply voltage, and the third power connection L3 connects the low-side switch 25 of this half-bridge 23 to ground potential. In this case, the first, second, third and fourth power connections L1, L2, L3, L4 represent input-side power connections and the remaining power connections L5, L6, L7 represent output-side power connections. Figure 9 shows a schematic circuit diagram of an H-bridge functional unit 26. The H-bridge functional unit 26 comprises a first H-bridge 27 and a second H-bridge 28. The first and second H-bridges 27 and 28 each comprise two half-bridges 23. These, in turn, each comprise a high-side switch 24 designed as an IGBT and a low-side switch 25. Analogous to Figure 8, the power terminals L1, L2, ..., L7 and the control and auxiliary terminals H1, H2, ..., H14 are also designated here, corresponding to the power terminals L1, L2, ..., L7 and the control and auxiliary terminals H1, H2, ..., H14 shown in Figures 7 and 2. It is further shown that the H-bridge functional unit 26 has two shunts 29, whereby a voltage dropping across these shunts 29 can be tapped by means of auxiliary terminals H3, H4 and the auxiliary terminals H6, H5.This allows a current measurement to be performed when the resistance value of the shunts 29 is known, thus enabling verification of the functionality of the first and second H-bridges 27 and 28. A fifth power terminal L5 can be connected to a voltage potential for supplying power to the first H-bridge 27. Similarly, a seventh power terminal L7 can be connected to a voltage potential for supplying power to the second H-bridge 28. A sixth power terminal L6 can be connected to a ground potential, in particular the vehicle ground. Therefore, the fifth, sixth, and seventh power terminals L5, L6, and L7 represent input-side power terminals of a power semiconductor module 13 equipped with an H-bridge functional unit 26. The remaining power terminals L1, L2, L3, and L4 are output-side power terminals. Figure 10 shows a schematic circuit diagram of a rectifier functional unit 43. Analogous to Figures 8 and 9, power terminals L1, L2, ..., L7 and control and auxiliary terminals H1, H2, ..., H14 are designated here, corresponding to the power terminals L1, L2, ..., L7 and control and auxiliary terminals H1, H2, ..., H14 shown in Figures 7 and 2. A first power terminal L1 and a second power terminal L2 connected in parallel to it serve to connect a first MOSFET 42, in particular its drain terminal, to a voltage potential. Furthermore, a third power terminal L3 and a fourth power terminal L4 connected in parallel to it serve to electrically connect the second MOSFET 42, in particular its drain terminal, to another voltage potential, e.g., a ground potential.The aforementioned power connections L1, L2, L3, L4 thus serve as input-side power connections of a power semiconductor module 13 equipped with the rectifier functional unit 43. The remaining power connections L5, L6, L7, connected in parallel, are output-side power connections and are electrically connected to the source side of both MOSFETs 42. Figure 11 shows a schematic block diagram of a charging branch 30. The charging branch 30 is connected on the input side to an external power supply 31. The charging branch 30 comprises a first H-bridge 32 of the charging branch 30. The charging branch 30 further comprises a charging branch capacitor 33, a second H-bridge 34 of the charging branch 30, a transformer 35, a third H-bridge 36 of the charging branch 30, and a traction battery 3. The first and second H-bridges 32, 34 of the charging branch 30 can be configured as H-bridges 27, 28 of an H-bridge functional unit 26. In particular, the first H-bridge 32 of the charging branch 30 can correspond to the first H-bridge 27 shown in Fig. 9, and the second H-bridge 34 of the charging branch 30 can correspond to the second H-bridge 28 shown in Fig. 9. Thus, the first and second H-bridges 32, 34 of the charging branch 30 can be arranged on a power semiconductor module 13.Here, the first H-bridge 32 of the charging branch 30 serves for power factor correction and voltage rectification of an alternating voltage from the external power supply 31. For this purpose, the first H-bridge 32 is connected to the external power supply 31, for example, via a fifth power terminal L5. On the output side, for example, via the first and second power terminals L1 and L2 shown in Fig. 9, the first H-bridge 32 of the charging branch 30 is connected to the capacitor 33. Here, the first H-bridge 32 of the charging branch 30 also serves as a boost converter, so that a voltage potential of the external power supply 31 (low voltage) can be transformed to a desired voltage potential, in particular a high-voltage potential. The high-voltage voltage is an operating voltage of the traction battery 3 and is, for example, 430 volts.The capacitor 33 is electrically connected on its output side to the second H-bridge 34 of the charging branch 30, for example to the seventh power terminal L7 shown in Fig. 9. The second H-bridge 34 of the charging branch 30 serves as an alternating current transformer, and its output side is connected, for example via a third and fourth power terminal L3, L4 (see Fig. 9), to a transformer 35. The transformer 35 provides galvanic isolation between the external power supply 31 and the traction battery 3. The transformer 35 transforms an input voltage into an output voltage, which is then applied to an input of the third H-bridge 36. The third H-bridge 36 rectifies the voltage and is electrically connected on its output side, for example via a third and fourth power terminal L3, L4 (see Fig. 9), to the traction battery 3.A ground potential can be present at the sixth power connection L6 of the H-bridge functional unit 26 comprising the first and second H-bridge 32, 34. Figure 12 shows a schematic block diagram of a DC-DC converter branch 37. The DC-DC converter branch 37 comprises a traction battery 3, an H-bridge 38 of the DC-DC converter branch 37, a transformer 39, a rectifier 40, and a vehicle battery 41. The traction battery 3 is connected to the output side of the H-bridge 38 of the DC-DC converter branch 37, for example, to a fifth power terminal L5 of the H-bridge 38 (see Figure 9). The H-bridge 38 provides alternating current and is connected to the output side of the transformer 39, for example, via a first and a second power terminal L1, L2. The transformer 39 transforms the voltage from a high-voltage voltage to a vehicle electrical system voltage (low-voltage voltage), for example, from 430 volts to 12 volts.The transformer 39 also serves to galvanically isolate a traction network and the vehicle electrical system 7 (see Fig. 1). On its output side, the transformer 39 is connected to the rectifier 40, whose schematic circuit diagram is shown, for example, in Fig. 10. Thus, the transformer 39 can be connected, for example, to the first and second power terminals L1, L2, as well as the third and fourth power terminals L3, L4 (see Fig. 10) of the rectifier 40. On its output side, the rectifier 40 is connected, for example, by means of the fifth, sixth, and seventh power terminals L5, L6, L7 connected in parallel to the vehicle electrical system battery 41. As previously explained, the first H-bridge 32 of the charging branch 30 can be configured as the first H-bridge 27 and the second H-bridge 34 of the charging branch 30 as the second H-bridge 28 of an H-bridge functional unit 26. Furthermore, the H-bridge 38 of the DC-DC conversion branch 37 and the third H-bridge 36 of the charging branch 30 can be configured as the first and second H-bridges 27 and 28, respectively, of another H-bridge functional unit 26. Thus, a power semiconductor module 13 (see Fig. 2) can be equipped with the first and second H-bridges 32 and 34 of the charging branch. Furthermore, another power semiconductor module 13 can be equipped with the H-bridge 38 of the DC-DC conversion branch 37 and the third H-bridge 36 of the charging branch 30. This advantageously results in a compact design of an electrical system 1 of an electric vehicle 2. Reference symbol list 1 Electrical system 2 Electric vehicle 3 Traction battery, high-voltage battery 4 Battery management unit 5 Inverter 6 DC converter 7 On-board electrical system 8 Control unit 9 Electric motor 10 Interface 11 Control unit 12 Cables 13, 13-1, 13-2, 13-3 Power semiconductor module 14 First trough wall 15 Second trough wall 16 Trough bottom 17 Surface 18, 18-1, 18-2,18-3 Capacitor module 19 Predetermined capacitance element 20 Circuit arrangement 21 Further circuit arrangement 22 Three-phase inverter 23 Half-bridge 24 High-side switch 25 Low-side switch 26 H-bridge functional unit 27 First H-bridge 28 Second H-bridge 29 Shunt 30 Charging branch 31 External power supply 32 First H-bridge of the charging branch 33 Capacitor 34 Second H-bridge of the charging branch 35 Transformer 36 Third H-bridge of the charging branch 37 DC conversion branch 38 H-bridge of the DC conversion branch 39 Transformer 40 Rectifier 41 On-board battery 42 MOSFET 43 Rectifier functional unit L1, ... L7 L1C,L2C,L3C, L4C, Power terminals of the power semiconductor module L5C, L6C, L7C,L8C Power terminals of the capacitor module H1, H2, ... H14 control and auxiliary connections,

Claims

Power semiconductor module, wherein the power semiconductor module (13) has a number of power terminals (L1, L2, L3, L4, L5, L6, L7) and a number of control and auxiliary terminals (H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, H14), wherein the power semiconductor module (13) has 7 power terminals (L1-L7) and 12 or 14 control and auxiliary terminals (H1-H14). Power semiconductor module according to one of the preceding claims, characterized in that the power semiconductor module (13) is designed in a trough shape, wherein an internal volume of the power semiconductor module (13) is bounded by at least two trough walls (14, 15) and a trough bottom (16), wherein the at least two trough walls (14, 15) are arranged on opposite sides of the trough bottom (16). Power semiconductor module according to claim 2, characterized in that the basin base (16) is rectangular, wherein four power terminals (L1, L2, L3, L4) are arranged on the first basin wall (14), wherein the power terminals (L1, L2, L3, L4) arranged on the first basin wall (14) are spaced apart from each other along the first basin wall (14) at a predetermined distance, wherein two control and auxiliary terminals (H9, H10, H11, H12, H13, H14) are arranged between each pair of power terminals (L1, L2, L3, L4) arranged on the first basin wall, wherein these two control and auxiliary terminals are spaced apart from each other at a predetermined distance along the first basin wall (14). Power semiconductor module according to one of claims 2 or 3, characterized in that three power terminals (L5, L6, L7) are arranged on a second trough wall (15), wherein the power terminals (L5, L6, L7) arranged on the second trough wall (15) are spaced apart from each other along the second trough wall (15) at a predetermined distance, wherein four control and auxiliary terminals (H1, H2, H3, H4, H5, H6, H7, H8) are arranged between each pair of power terminals (L5, L6, L7) arranged on the second trough wall (15), wherein these four control and auxiliary terminals are spaced apart from each other along the second trough wall (15) at a predetermined distance. Power semiconductor module according to one of claims 1 to 4, characterized in that the control and auxiliary connections (H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, H14) are designed as L-shaped pins, wherein a first leg of the pins is arranged in a plane that is parallel to or equal to a plane in which an inner surface (17) of the trough bottom (16) is arranged, wherein a second leg of the pin is arranged perpendicular to the inner surface (17) of the trough bottom (16). Power semiconductor module according to claim 5, characterized in that the length of first legs differs from that of at least two adjacent pins. Circuit arrangement, wherein the circuit arrangement (20) comprises at least one power semiconductor module (13) according to any one of claims 1 to 6 and at least one capacitor module (18), wherein the capacitor module (18) comprises at least four output-side power terminals (L1C, L2C, L3C, L4C, L5C, L6C) and at least two input-side power terminals (L7C, L8C) and an element (19) with a predetermined capacitance, wherein at least two of the four output-side power terminals (L1C, L2C, L3C, L4C) of the capacitor module (18) are each electrically connected to a power terminal (L1, L2, L3, L4) of the power semiconductor module (13), wherein the at least two remaining output-side power terminals (L5C, L6C) of the capacitor module (18, 18-1, 18-2, 18-3) are each electrically connected to an input-side (L7C, L8C) Power connection of another capacitor module (13, 13-1, 13-2, 13-3) can be electrically connected. Circuit arrangement according to claim 7, characterized in that the circuit arrangement comprises a first power semiconductor module (13-1) and at least one further power semiconductor module (13-2), as well as a first capacitor module (18-1) and at least one further capacitor module (18-2), wherein at least two of the four output-side power terminals (L1C, L2C, L3C, L4C) of the first capacitor module (18-1) are each electrically connected to a power terminal (L1, L2, L3, L4) of the first power semiconductor module (13-1), wherein at least two of the four output-side power terminals (L1C, L2C, L3C, L4C) of the at least one further capacitor module (18-2) are each electrically connected to a power terminal (L1, L2, L3, L4) of the at least one further power semiconductor module (13), wherein the remaining two of the four output-side power terminals (L5C,L6C) of the first capacitor module (18-2) are each electrically connected to an input-side power connection (L7C, L8C) of at least one further capacitor module (18). Electrical system of an electric or hybrid vehicle, wherein the electrical system (1) comprises at least one charging branch (30) and a DC conversion branch (37), wherein electrical power from an external power grid (31) can be transferred to a high-voltage battery (3) via the charging branch (30), wherein electrical power can be transferred between the high-voltage battery (3) and an on-board battery (41) via the DC conversion branch (37), wherein a first power semiconductor module (13) according to any one of claims 1 to 6 is equipped with a first and a second H-bridge (32, 34), wherein a second power semiconductor module (13) according to any one of claims 1 to 6 is equipped with a first and a second H-bridge (38, 36), wherein the first H-bridge (32) of the first power semiconductor module (13) is arranged in the charging branch (30).wherein the first H-bridge (32) of the first power semiconductor module (30) is connectable to the external power grid (31) on the input side and to a capacitive element on the output side, wherein power factor correction and rectification can be performed by means of the first H-bridge (32) of the first power semiconductor module (13), wherein the second H-bridge (34) of the first power semiconductor module (13) is arranged in the charging branch (30), wherein the second H-bridge (34) of the first power semiconductor module (13) is connected to the capacitive element on the input side and to a voltage transformation device of the charging branch (30) on the output side, wherein alternating current can be performed by means of the second H-bridge (34) of the first power semiconductor module (13), wherein the first H-bridge (38) of the second power semiconductor module (13) is arranged in the DC voltage conversion branch (37),wherein the first H-bridge (38) of the second power semiconductor module (13) is connected on the input side to the high-voltage battery (3) and on the output side to a voltage transformation device of the DC-DC converter branch (37), wherein an alternating direction can be carried out by means of the first H-bridge (38) of the second power semiconductor module (13), wherein the second H-bridge (36) of the second power semiconductor module (13) is arranged in the charging branch (30), wherein the second H-bridge (36) of the second power semiconductor module (13) is connected on the input side to the voltage transformation device of the charging branch and on the output side to the high-voltage battery (3), wherein rectification can be carried out by means of the second H-bridge (36) of the second power semiconductor module (13).

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