Optoelectronic component, optoelectronic component device and method for manufacturing an optoelectronic component

Abstract

Optoelectronic component (100), comprising: a planar optically active structure (150) and an electrical circuit structure (130), • wherein the planar optically active structure (150) is configured to receive and / or provide electromagnetic radiation; • wherein the electrical circuit structure (130) is configured to provide an output value, the output value being dependent on at least one operating parameter of the optically active structure (150); and • wherein the electrical circuit structure (130) remains free of the operating current (208) which is supplied to the planar optically active structure (150) for the operation of the planar optically active structure (150).

Description

[0001] Various embodiments are provided of an optoelectronic component, an optoelectronic component device and a method for manufacturing an optoelectronic component.

[0002] Organic optoelectronic devices, such as organic light-emitting diodes (OLEDs), are increasingly used in general lighting, for example as area light sources. A conventional organic optoelectronic device, such as an OLED, can have an anode and a cathode with an organic functional layer system in between.The organic functional layer system has one or more emitter layer(s) in which electromagnetic radiation is generated, one or more charge-generating layer(s) consisting of two or more charge-generating layer(s) (CGL) for charge-generating layer generation, one or more electron-blocking layer(s), also referred to as hole-transport layer(s) (HTL), and one or more hole-blocking layers, also referred to as electron-transport layer(s) (ETL), to direct the current flow.

[0003] The publications EP 1 821 577 A1, JP 2007 - 173 088 A and US 2011 / 0 187 285 A1 describe optoelectronic components.

[0004] In a conventional electronic ballast for an LED, the circuit board of the electronic ballast has two additional contacts besides the contacts for powering the LED. The electrical resistance calculated for a specific universal ballast is connected to these additional contacts during the LED and electronics assembly. Therefore, to operate the LED, the user only needs to connect it to the ballast. The electronic ballast measures the electrical resistance and, according to a conversion formula, provides a current with a corresponding current level at the output of the electronic ballast for the LED.

[0005] Organic light-emitting diodes (OLEDs) can be manufactured in a wide variety of configurations, using diverse technologies, materials, sizes, and shapes. This results in a multitude of different rated currents for the various OLEDs. Each configuration can be operated at a different rated current. Due to this wide variety of OLED configurations, some may exhibit unusual operating currents, such as 123 mA or similar values. To ensure that the rated current is approximately the same across these diverse OLEDs, electronic ballasts with adjustable output current or voltage are required.

[0006] To operate an organic light-emitting diode (OLED), the individually adjustable electronic ballast of a conventional inorganic LED is traditionally used. Such an electronic ballast provides an electric current across a wide range of current intensities and can allow any desired current value, or at least finely graduated current values ​​within this range.

[0007] From a user's perspective, an organic light-emitting diode (OLED) should be as easy as possible to integrate into a device or component, requiring no in-depth technical knowledge. Furthermore, integrating the optoelectronic component into a device should not require any special effort.

[0008] In a conventional procedure, users of organic light-emitting diodes (OLEDs) must obtain the required current rating from the datasheet. They then have to convert this current rating into a resistance value using a formula or table. Next, they must approximate this resistance value to that of commonly available resistors. Finally, they must correctly connect the resistor to the interface of the electronic ballast. Many users of OLEDs are unwilling or unable to deal with this multitude of technical decisions or the necessary technical effort, preferring simpler solutions such as plug-and-play. Even if users are able to make these decisions and undertake this effort, errors can still potentially occur.For example, calculations may be incorrect, incorrect resistors may be used (e.g., incorrect resistors are supplied or installed), and / or the resistor may be incorrectly connected. Incorrect resistance values ​​can lead to the organic light-emitting diode (OLED) operating at an incorrect current. Typically, the output current of the ballast is not measured after the current is set. Therefore, an incorrectly set current may not be immediately detected, which can damage the OLED.

[0009] One task is to specify improved optoelectronic components, optoelectronic component devices, and methods for manufacturing an optoelectronic component.

[0010] This problem is solved by the subject matter or methods of claims 1, 7 and 16.

[0011] In various embodiments, an optoelectronic component, an optoelectronic component device and a method for manufacturing an optoelectronic component are provided, with which it is possible to design and operate a technically simpler organic optoelectronic component.

[0012] In various embodiments, an optoelectronic component is provided comprising: a planar optically active structure and an electrical circuit structure, wherein the planar optically active structure is configured to receive and / or provide electromagnetic radiation; and wherein the electrical circuit structure is configured to provide an output value, the output value being dependent on at least one operating parameter of the optically active structure.

[0013] In one embodiment, the planar optically active structure can have a first electrode, a second electrode and an organic functional layer structure, wherein the organic functional layer structure is formed between the first electrode and the second electrode.

[0014] In one embodiment, the optoelectronic component can be designed as an organic light-emitting diode, an organic solar cell and / or an organic photodetector.

[0015] In one embodiment, the optoelectronic component can be designed as a surface component.

[0016] In one embodiment, at least one operating parameter can depend on the electric current and / or current density of the operating current and / or the operating voltage of the optically active structure.

[0017] In one embodiment, at least one operating parameter can depend on the planar dimension of the optically active structure.

[0018] In one embodiment, at least one operating parameter can depend on the voltage and / or the light color.

[0019] Optoelectronic components of the same design but with different surface areas should be operated with the same current density. This ensures consistent aging and lifespan for optoelectronic components of varying surface areas, for example, by providing a uniform perceived brightness due to consistent luminance and / or chromaticity. Because of their different surface areas, providing the same current density for these components requires electrical currents of varying intensities. Therefore, an operating parameter, such as the required current, can depend on the specific surface area of ​​the optically active structure of each component.

[0020] Other operating parameters of an optoelectronic component can depend on process-related fluctuations, such as layer thickness, local material concentrations, and defect density. As a result, two optoelectronic components of the same design and area dimensions can exhibit different electrical properties, such as different capacitances, resistances, and inductances; and / or different optical properties, such as color coordinates and / or intensity of absorbable and / or emittable electromagnetic radiation.

[0021] In one embodiment, the electrical circuit structure can have an electrical resistance, wherein the output value depends on the electrical resistance value of the electrical resistor.

[0022] In one embodiment, the electrical circuit structure can include a capacitor, where the output value depends on the capacitance of the capacitor.

[0023] In one embodiment, the electrical circuit structure can include an inductor component, where the output value depends on the inductance of the inductor component.

[0024] In one embodiment, the electrical circuit structure can have a conductor structure, wherein the conductor structure has several electrical lines such that the output value depends on the bit pattern of the several electrical lines. In other words, the output value can depend on the combination of connections, bridges, and breaks between the several electrical lines.

[0025] In one embodiment, the electrical circuit structure can have a first current connection and at least one second current connection, wherein the first current connection is electrically connected to the second current connection. For example, the first current connection can be configured as a current input and the second current connection as a current output.

[0026] In one embodiment, the electrical circuit structure can have one current input and several current outputs, wherein the multiple current outputs are electrically connected to the single current input before the bit pattern is formed. This allows, for example, an electrical circuit structure with a bit pattern to be implemented with only one current input. The bit pattern can be formed by having certain lines of the multiple lines have open circuits between the current input and their respective current outputs. This means that the current outputs of these lines are not connected to the current input.

[0027] In one embodiment, the electrical circuit structure can be formed on or above the optically active structure.

[0028] In one embodiment, the optoelectronic component can further comprise a cover, wherein the cover is formed on the electrical circuit structure; or wherein the electrical circuit structure is formed on the cover. In the embodiment with the cover on the electrical circuit structure, the cover can protect the electrical circuit structure and / or the optically active structure from harmful substances, for example, water and / or oxygen, for example, with regard to oxidation; and / or from mechanical damage, for example, scratches.

[0029] In one embodiment, the electrical circuit structure can be formed next to the optically active structure, for example in the optically inactive area.

[0030] In one embodiment, the electrical circuit structure can have an additional cover. This additional cover can be separate from the cover of the optically active structure. However, the electrical circuit structure and the optically active structure can also share a common cover.

[0031] In one embodiment, the electrical circuit structure and the planar optically active structure can have at least one common electrode.

[0032] In one embodiment, the electrical circuit structure can be electrically connected to at least one of the electrodes of the optically active structure.

[0033] In one embodiment, the electrical circuit structure can have an electrical memory, wherein the output value is stored in the electrical memory in a way that allows it to be read electrically.

[0034] In one embodiment, the electrical circuit structure can have an interface, wherein the interface has one or more terminals and wherein the interface is set up for electrically reading the output value.

[0035] In one embodiment, the interface can be configured for wireless reading of the output value.

[0036] In various embodiments, a method for manufacturing an optoelectronic component is provided, comprising: forming a planar optically active structure, wherein the planar optically active structure is designed to receive or provide electromagnetic radiation; determining at least one operating parameter of the optically active structure of the optoelectronic component; and forming an electrical circuit structure taking into account the determined operating parameter such that the output value of the electrical circuit structure is a function of the determined operating parameter.

[0037] In one embodiment of the method, the formation of the optically active structure can include the formation of a first electrode, the formation of an organic functional layer structure on the first electrode, and the formation of a second electrode on the organic functional layer structure.

[0038] In one embodiment of the method, the optoelectronic component can be designed as an organic light-emitting diode, an organic solar cell and / or an organic photodetector.

[0039] In one embodiment of the method, the optoelectronic component can be designed as a surface component.

[0040] In one embodiment of the method, at least one operating parameter can depend on the electrical current of the operating current of the optically active structure.

[0041] In one embodiment of the method, at least one operating parameter can depend on the planar dimension of the optically active structure.

[0042] In one embodiment of the method, at least one operating parameter can depend on the voltage and / or the color of the light.

[0043] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of an electrical resistance, wherein the output value depends on the electrical resistance value of the electrical resistor.

[0044] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of a capacitor, where the output value depends on the capacitance of the capacitor.

[0045] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of an inductor component, wherein the output value depends on the inductance of the inductor component.

[0046] In one embodiment of the method, the formation of the electrical circuit structure can involve the formation of a conductor structure, wherein the conductor structure is formed with multiple electrical lines such that the output value depends on the bit pattern of the multiple electrical lines. In other words, the output value can depend on the combination of connections, bridges, and breaks between the multiple electrical lines.

[0047] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of a first current connection and at least one second current connection, wherein the first current connection is electrically connected to the second current connection.

[0048] In one embodiment of the method, the formation of the electrical circuit structure can involve the creation of a current input and multiple current outputs, wherein the multiple current outputs are electrically connected to the single current input before the bit pattern is formed. The bit pattern can be formed by creating breaks between the current input and its output on certain lines of the multiple lines. This disconnects the current outputs of these lines from the current input.

[0049] In one embodiment of the method, the electrical circuit structure can be formed on or above the optically active structure.

[0050] In one embodiment of the method, the formation of the optically active structure can further include the formation of a cover, wherein the cover is formed on the electrical circuit structure; or wherein the electrical circuit structure is formed on the cover.

[0051] In one embodiment of the method, the electrical circuit structure can be formed alongside the optically active structure.

[0052] In one embodiment of the method, the formation of the electrical circuit structure can further include the formation of an additional cover, wherein the additional cover is formed over the electrical circuit structure. The additional cover can be formed separately with respect to the covering of the optically active structure. However, the electrical circuit structure and the optically active structure can also be formed with a common cover.

[0053] In one embodiment of the method, the electrical circuit structure and the planar optically active structure can be designed such that they have at least one common electrode.

[0054] In one embodiment of the method, the electrical circuit structure can be electrically connected to at least one of the electrodes of the optically active structure.

[0055] In one embodiment of the method, the formation of the optically active structure can involve the formation of an electrical circuit pre-structure.

[0056] In one embodiment of the method, the formation of the electrical circuit structure can involve structuring the electrical circuit pre-structure.

[0057] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of an electrically insulating structure and / or the formation of an electrical bridging structure in the electrical circuit pre-structure.

[0058] In one embodiment of the method, the formation of the electrically insulating structure and / or the formation of the electrical bridging structure can be designed such that the capacitance of a capacitor; the resistance value of an electrical resistor; the inductance of an inductor component; and / or the bit pattern of a conductor structure are formed with respect to the determined operating parameter.

[0059] In one embodiment of the process, the formation of the electrically insulating structure can involve laser ablation.

[0060] In one embodiment of the method, the electrical circuit prestructure can be formed with a first electrically conductive structure and at least one second electrically conductive structure, wherein the first electrically conductive structure is formed in an electrically isolated manner from the second electrically conductive structure.

[0061] In one embodiment of the method, the formation of the bridging structure can involve the formation of an electrical connection between the first electrically conductive structure and the second electrically conductive structure.

[0062] In one embodiment of the method, the formation of the electrical connection can involve the application of an electrically conductive material between the first electrically conductive structure and the second electrically conductive structure.

[0063] In one embodiment of the method, the formation of the electrically insulating structure can involve the formation of an electrically insulating material between the first electrically conductive structure and the second electrically conductive structure.

[0064] In one embodiment of the method, the electrical circuit prestructure can be formed with a third electrically conductive structure.

[0065] In one embodiment of the method, the formation of the electrically insulating structure can involve removing part of the third electrically conductive structure such that a fourth electrically conductive structure and a fifth electrically conductive structure are formed.

[0066] In one embodiment of the method, the fourth electrically conductive structure can be electrically isolated from the fifth electrically conductive structure.

[0067] In one embodiment of the method, the current path through the electrical circuit structure can be changed by removing part of the third electrically conductive structure.

[0068] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of an electrical memory, wherein the electrical memory is designed in such a way that the output value can be stored in the electrical memory in a way that allows it to be read electrically.

[0069] In one embodiment of the method, the formation of the electrical circuit structure can include the formation of an interface, wherein the interface is formed with one or more connections, and wherein the interface is formed for electrically reading the output value.

[0070] In one embodiment of the procedure, the interface can be designed for wireless reading of the output value.

[0071] In various embodiments, an optoelectronic device is provided, comprising: an optoelectronic component according to the embodiments described above; an electronic ballast configured to supply an electric current to the planar optically active structure and / or to receive an electric current from the optically active structure; wherein the electronic ballast has a first terminal, a second terminal, and a detection device, the detection device being electrically coupled to the first terminal and the second terminal; wherein the planar optically active structure is electrically connected to the first terminal, and the electrical circuit structure is electrically connected to the second terminal;wherein the detection device is set up to determine the output value of the electrical circuit structure and, by means of the determined output value, changes at least one operating parameter of the optically active structure with respect to a predetermined operating parameter.

[0072] By electrically coupling the detection device to the first and second terminals, the detection device can determine the output value of the electrical circuit structure. This allows the detection device to forward the information about at least one operating parameter to be output, determined via the functional relationship, to the second terminal.

[0073] In one embodiment of the optoelectronic device, the specified operating parameter can be a current and / or current density and / or voltage specified for the planar optically active structure, for example with regard to the planar dimension of the optically active structure.

[0074] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0075] They show Fig. 1A, B schematic views of an optoelectronic component according to different embodiments; Fig. 2A, B schematic representations of an exemplary embodiment of an optoelectronic component; Fig. 3A, B schematic representations of an exemplary embodiment of an optoelectronic component; Fig. 4A, B schematic representations of an embodiment of an optoelectronic component; Fig. 5 a schematic representation of a method for forming an optoelectronic component according to various embodiments; and Fig. 6A-E Schematic representations of electrical circuit structures according to various embodiments.

[0076] The following detailed description refers to the accompanying drawings, which form part thereof and illustrate specific embodiments in which the invention can be implemented. In this context, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention.It is understood that the features of the various exemplary embodiments described herein can be combined with one another, unless specifically stated otherwise. The following detailed description is therefore not to be interpreted in a limiting sense, and the scope of protection of the present invention is defined by the appended claims.

[0077] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0078] Various optoelectronic components are described, each comprising an optically active region. This region can absorb electromagnetic radiation and generate a photocurrent, or emit electromagnetic radiation by applying a voltage to it. In these various embodiments, the electromagnetic radiation can have a wavelength range including X-rays, ultraviolet (UV) radiation, visible light, and / or infrared (IR) radiation.

[0079] A planar optoelectronic device, which has two planar, optically active sides, can be transparent or translucent in the direction connecting the optically active sides, for example, as a transparent or translucent organic light-emitting diode (OLED). A planar optoelectronic device can also be designed as a plane optoelectronic device, for example, as a plane-parallel optoelectronic device.

[0080] The optically active area can also have a planar, optically active side and a planar, optically inactive side, for example, an organic light-emitting diode configured as a top emitter or bottom emitter. The optically inactive side can be, for example, transparent or translucent, or equipped with a mirror structure and / or an opaque material or mixture, for example, for heat dissipation. The beam path of the optoelectronic component can, for example, be unidirectional.

[0081] Within the context of this description, the provision of electromagnetic radiation can be understood as the emission of electromagnetic radiation. In other words, the provision of electromagnetic radiation can be understood as the emission of electromagnetic radiation by means of an applied voltage to an optically active area.

[0082] Within the context of this description, the absorption of electromagnetic radiation can be understood as the absorption of electromagnetic radiation. In other words, the absorption of electromagnetic radiation can be understood as the absorption of electromagnetic radiation and the formation of a photocurrent from the absorbed electromagnetic radiation.

[0083] An electromagnetic radiation-emitting structure can be configured in various ways, including electromagnetic radiation-emitting semiconductor structures and / or electromagnetic radiation-emitting diodes, organic electromagnetic radiation-emitting diodes, electromagnetic radiation-emitting transistors, or organic electromagnetic radiation-emitting transistors. The electromagnetic radiation-emitting component can, for example, be configured as a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The electromagnetic radiation-emitting component can be part of an integrated circuit in various configurations.Furthermore, a plurality of electromagnetic radiation-emitting components can be provided, for example housed in a common casing.

[0084] In various embodiments, an optoelectronic device can be configured as an organic light-emitting diode (OLED), an organic field-effect transistor (OFET), and / or organic electronics. The organic field-effect transistor can be a so-called "all-OFET," in which all layers are organic. An optoelectronic device can have an organic functional layer system, also referred to as an organic functional layer structure. The organic functional layer structure can consist of or be formed from an organic substance or mixture of organic substances, which is configured, for example, to generate electromagnetic radiation from a supplied electric current.

[0085] The optoelectronic component can be designed as an organic light-emitting diode, an organic photodetector, or an organic solar cell.

[0086] An organic light-emitting diode (OLED) can be configured as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the optically active region through the substrate. In a top emitter, light is emitted from the top of the optically active region and not through the substrate.

[0087] A top emitter and / or bottom emitter can also be optically transparent or optically translucent; for example, each of the layers or structures described below can be transparent or translucent.

[0088] Fig. Figures 1A and B show schematic views of an optoelectronic component according to different embodiments.

[0089] The optoelectronic component 100 comprises an electrical circuit structure 130 and a planar optically active structure 150. The electrical circuit structure 130 and the planar optically active structure 150 can be monolithically integrated within the optoelectronic component 100, for example, on or above a common support or substrate.

[0090] The embodiments of the optically active structure 150 of the optoelectronic component 100 are described in more detail in Fig. 1B described. The configurations of the electrical circuit structure 130 of the optoelectronic component 100 are described in more detail in Fig. 2 to Fig. 6 described.

[0091] Fig. Figure 1B shows a schematic cross-sectional view of the optoelectronic component according to various embodiments along the line shown. Fig. 1A illustrated section plane AA.

[0092] The optoelectronic device 100 has a hermetically sealed substrate, an active region 106 and an encapsulation structure.

[0093] The hermetically sealed substrate can have a support 102 and a first barrier layer 104.

[0094] The active region 106 is an electrically active region 106 and / or an optically active region 106. The active region 106 is, for example, the region of the optoelectronic component 100 in which electric current flows for the operation of the optoelectronic component 100 and / or in which electromagnetic radiation is generated and / or absorbed.

[0095] The electrically active area 106 can have a first electrode 110, an organic functional layer structure 112 and a second electrode 114.

[0096] The organic functional layer structure 106 can have one, two, or more functional layer structure units and one, two, or more intermediate layer structure(s) between the layer structure units. For example, the organic functional layer structure 112 can have a first organic functional layer structure unit 116, an intermediate layer structure 118, and a second organic functional layer structure unit 120.

[0097] The encapsulation structure can include a second barrier layer 108, a coherent connecting layer 122 and a cover 124.

[0098] The support 102 can comprise or be formed from glass, quartz, and / or a semiconductor material. Furthermore, the support can comprise or be formed from a plastic film or a laminate containing one or more plastic films. The plastic can comprise or be formed from one or more polyolefins (for example, high-density or low-density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic can comprise or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), and / or polyethylene naphthalate (PEN).

[0099] The carrier 102 can contain or be made of a metal, for example copper, silver, gold, platinum, iron, or a metal compound, for example steel.

[0100] The carrier 102 can be opaque, translucent or even transparent.

[0101] The support 102 can be part of a mirror structure or form one.

[0102] The carrier 102 can have a mechanically rigid area and / or a mechanically flexible area, or be designed in such a way, for example as a film.

[0103] The carrier 102 can be designed as a waveguide for electromagnetic radiation, for example, being transparent or translucent with respect to the emitted or absorbed electromagnetic radiation of the optoelectronic component 100.

[0104] The first barrier layer 104 may consist of or be formed from any of the following materials: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof.

[0105] The first barrier layer 104 can be formed by one of the following methods: an atomic layer deposition (ALD) process, for example a plasma-enhanced atomic layer deposition (PEALD) or a plasma-less atomic layer deposition (PLALD); a chemical vapor deposition (CVD) process, for example a plasma-enhanced chemical vapor deposition (PECVD) or a plasma-less chemical vapor deposition (PLCVD); or alternatively by other suitable deposition methods.

[0106] In a first barrier layer 104, which has several sublayers, all sublayers can be formed using an atomic layer deposition (ALD) process. A layer sequence consisting only of ALD layers can also be referred to as a "nanolaminate".

[0107] In the case of a first barrier layer 104 which has several sublayers, one or more sublayers of the first barrier layer 104 can be deposited by means of a deposition process other than an atomic layer deposition process, for example by means of a gas phase deposition process.

[0108] The first barrier layer 104 can have a layer thickness of approximately 0.1 nm (one atomic layer) to approximately 1000 nm, for example a layer thickness of approximately 10 nm to approximately 100 nm according to one embodiment, for example approximately 40 nm according to one embodiment.

[0109] The first barrier layer 104 can have one or more high-refractive-index materials, for example one or more material(s) with a high refractive index, for example with a refractive index of at least 2.

[0110] Furthermore, it should be noted that in various embodiments a first barrier layer 104 can be completely dispensed with, for example in the case that the support 102 is hermetically sealed, for example if it is made of or consists of glass, metal, metal oxide.

[0111] The first electrode 104 can be configured as an anode or as a cathode.

[0112] The first electrode 110 can comprise or be formed from one of the following electrically conductive materials: a metal; a transparent conductive oxide (TCO); a network of metallic nanowires and particles, for example, of Ag, combined with conductive polymers; a network of carbon nanotubes, combined with conductive polymers; graphene particles and layers; a network of semiconducting nanowires; an electrically conductive polymer; a transition metal oxide; and / or their composites. The first electrode 110 made of or comprising a metal can comprise or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm, or Li, as well as compounds, combinations, or alloys of these materials.The first electrode 110 can be a transparent conductive oxide made of one of the following materials: for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds are also included, such as AlZnO, Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O. 12 or mixtures of different transparent conductive oxides belong to the group of TCOs and can be used in various embodiments. Furthermore, TCOs do not necessarily have a stoichiometric composition and can also be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

[0113] The first electrode 110 can have a layer or a stack of layers of several layers of the same or different materials. The first electrode 110 can be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

[0114] The first electrode 104 can, for example, have a layer thickness in a range of 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

[0115] The first electrode 110 can have a first electrical connection to which a first electrical potential can be applied. The first electrical potential can be provided by an energy source, for example, a current source or a voltage source. Alternatively, the first electrical potential can be applied to an electrically conductive support 102, and the first electrode 110 can be indirectly supplied with electrical power through the support 102. The first electrical potential can be, for example, the ground potential or another predefined reference potential.

[0116] In Fig. Figure 1B shows an optoelectronic device 100 comprising a first organic functional layer structure unit 116 and a second organic functional layer structure unit 120. In various embodiments, the organic functional layer structure 112 can also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70.

[0117] The first organic functional layer structure unit 116 and the optionally further organic functional layer structures can be identical or different, for example, having the same or different emitter materials. The second organic functional layer structure unit 120, or the further organic functional layer structure units, can be configured like one of the embodiments of the first organic functional layer structure unit 116 described below.

[0118] The first organic functional layer structure unit 116 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and an electron injection layer.

[0119] In an organic functional layer structure unit 112, one or more of the aforementioned layers can be provided, whereby identical layers can have physical contact, can be connected only electrically to each other, or can even be electrically isolated from each other, for example, by being arranged side by side. Individual layers of the aforementioned layers can be optional.

[0120] A hole injection layer can be formed on or above the first electrode 110. The hole injection layer can consist of or be formed from one or more of the following materials: HAT-CN, Cu(I)pFBz, MoO X , WHERE X VO X , ReO X, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc; NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenylfluorene); Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-ylamino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-ylamino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluorine; N,N'-bis (phenanthren-9-yl)-N,N'-bis (phenyl)-benzidine;2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spirobifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spirobifluorene; 2,2'-Bis(N,N-diphenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-ditolyl)amino-spiro-bifluorene; and / or N,N,N',N'-tetra-naphthalene-2-yl-benzidine.;

[0121] The hole injection layer can have a thickness in a range of approximately 10 nm to approximately 1000 nm, for example in a range of approximately 30 nm to approximately 300 nm, for example in a range of approximately 50 nm to approximately 200 nm.

[0122] A hole transport layer may be formed on or above the hole injection layer. The hole transport layer may consist of or be composed of one or more of the following materials: NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene). DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-ylamino)phenyl]-9H-fluorene;9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluoro; N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine; 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spirobifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spirobifluorene; 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluorene; and N,N,N',N'-tetra-naphthalen-2-yl-benzidine, a tertiary amine, a carbazole derivative, a conducting polyaniline and / or polyethylenedioxythiophene.;

[0123] The hole transport layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0124] An emitter layer can be formed on or above the hole transport layer. Each of the organic functional layer structure units 116, 120 can have one or more emitter layers, for example with fluorescent and / or phosphorescent emitters.

[0125] An emitter layer can consist of or be formed from organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules, or a combination of these materials.

[0126] The optoelectronic device 100 can have one or more of the following materials in an emitter layer or be formed from them: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (for example, 2- or 2,5-substituted poly-p-phenylenevinylene), as well as metal complexes, for example, iridium complexes such as blue phosphorescent FIrPic (Bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)-iridium III), green phosphorescent Ir(ppy)3 (Tris(2-phenylpyridine)iridium III), red phosphorescent Ru (dtb-bpy)3*2(PF6) (Tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex), and blue fluorescent DPAVBi (4,4-Bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-Bis[N,N-di-(p-tolyl)-amino]anthracene) and red fluorescent DCM2 (4-Dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters.

[0127] Such non-polymer emitters can be separated, for example, by thermal evaporation. Furthermore, polymer emitters can be used, which can be separated, for example, by a wet chemical process such as spin coating.

[0128] The emitter materials can be appropriately embedded in a matrix material, for example a technical ceramic or a polymer, such as an epoxy; or a silicone.

[0129] In various embodiments, the emitter layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0130] The emitter layer can consist of monochromatic or multicolored emitter materials (for example, blue and yellow or blue, green, and red). Alternatively, the emitter layer can have several sublayers that emit light of different colors. By mixing the different colors, the emission of light with a white color impression can result. Alternatively, a converter material can be placed in the beam path of the primary emission generated by these layers. This converter material at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that a white color impression results from the combination of primary and secondary radiation (which is not yet white).

[0131] The organic functional layer structure unit 116 can have one or more emitter layers designed as hole transport layers.

[0132] Furthermore, the organic functional layer structure unit 116 can have one or more emitter layers which are designed as electron transport layers.

[0133] An electron transport layer may be formed on or above the emitter layer, for example by being deposited.

[0134] The electron transport layer may contain or be composed of one or more of the following materials: NET-18; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene; 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; phenyl-dipyrenylphosphine oxide; naphthalene tetracarboxylic dianhydride or its imides; perylene tetracarboxylic dianhydride or its imides; and substances based on silols with a silacyclopentadiene unit.

[0135] The electron transport layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0136] An electron injection layer may be formed on or above the electron transport layer. The electron injection layer may consist of or be formed from one or more of the following materials: NDN-26, MgAg, Cs2CO3, Cs3PO4, Na, Ca, K, Mg, Cs, Li, LiF; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene;1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; Phenyl-dipyrenylphosphine oxide; Naphthalene tetracarboxylic dianhydride or its imides; Perylene tetracarboxylic dianhydride or its imides; and substances based on silols with a silacyclopentadiene unit.

[0137] The electron injection layer can have a thickness in a range of approximately 5 nm to approximately 200 nm, for example in a range of approximately 20 nm to approximately 50 nm, for example approximately 30 nm.

[0138] In an organic functional layer structure 112 with two or more organic functional layer structure units 116, 120, the second organic functional layer structure unit 120 can be formed above or next to the first functional layer structure unit 116. An intermediate layer structure 118 can be formed electrically between the organic functional layer structure units 116, 120.

[0139] In various embodiments, the intermediate layer structure 118 can be configured as an intermediate electrode 118, for example according to one embodiment of the first electrode 110. An intermediate electrode 118 can be electrically connected to an external voltage source. The external voltage source can, for example, provide a third electrical potential at the intermediate electrode 118. However, the intermediate electrode 118 can also have no external electrical connection, for example, by having a floating electrical potential.

[0140] In various embodiments, the intermediate layer structure 118 can be configured as a charge generation layer (CGL). A charge generation layer structure 118 can comprise one or more electron-conducting charge generation layers and one or more hole-conducting charge generation layers. The electron-conducting charge generation layer(s) and the hole-conducting charge generation layer(s) can each be formed from an intrinsically conductive material or a dopant in a matrix.The charge carrier pair generation layer structure 118 should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer(s) and the hole-conducting charge carrier pair generation layer(s) such that separation of electrons and holes can occur at the interface between an electron-conducting charge carrier pair generation layer and a hole-conducting charge carrier pair generation layer. The charge carrier pair generation layer structure 118 can also have a diffusion barrier between adjacent layers.

[0141] Each organic functional layer structure unit 116, 120 can, for example, have a layer thickness of a maximum of approximately 3 µm, for example, a layer thickness of a maximum of approximately 1 µm, for example, a layer thickness of a maximum of approximately 300 nm.

[0142] The optoelectronic device 100 can optionally include further organic functional layers, for example arranged on or above one or more emitter layers or on or above the electron transport layer(s). These additional organic functional layers can be, for example, internal or external coupling / uncoupling structures that further improve the functionality and thus the efficiency of the optoelectronic device 100.

[0143] The second electrode 114 can be formed on or above the organic functional layer structure 112 or, if applicable, on or above one or more further organic functional layer structures and / or organic functional layers.

[0144] The second electrode 114 can be configured according to one of the embodiments of the first electrode 110, whereby the first electrode 110 and the second electrode 114 can be identical or different. The second electrode 114 can be configured as an anode, i.e., as a hole-injecting electrode, or as a cathode, i.e., as an electron-injecting electrode.

[0145] The second electrode 114 can have a second electrical terminal to which a second electrical potential can be applied. The second electrical potential can be provided by the same or a different energy source as the first electrical potential and / or the optional third electrical potential. The second electrical potential can be different from the first electrical potential and / or the optional third electrical potential. For example, the second electrical potential can have a value such that the difference from the first electrical potential is in the range of approximately 1.5 V to approximately 20 V, for example, a value in the range of approximately 2.5 V to approximately 15 V, for example, a value in the range of approximately 3 V to approximately 12 V.

[0146] The second barrier layer 108 can be formed on the second electrode 114.

[0147] The second barrier layer 108 can also be referred to as thin-film encapsulation (TFE). The second barrier layer 108 can be configured according to one of the embodiments of the first barrier layer 104.

[0148] Furthermore, it should be noted that in various embodiments a second barrier layer 108 can be omitted entirely. In such a configuration, the optoelectronic component 100 can, for example, have a further encapsulation structure, which makes a second barrier layer 108 optional, for example a cover 124, a cavity glass encapsulation, or a metallic encapsulation.

[0149] Furthermore, in various embodiments, one or more input / output coupling layers can be additionally formed in the optoelectronic device 100, for example, an external output coupling film on or above the substrate 102 (not shown) or an internal output coupling layer (not shown) in the cross-section of the optoelectronic device 100. The input / output coupling layer can have a matrix and scattering centers distributed therein, wherein the average refractive index of the input / output coupling layer is greater than the average refractive index of the layer from which the electromagnetic radiation is provided. Furthermore, in various embodiments, one or more anti-reflective layers (for example, combined with the second barrier layer 108) can also be provided in the optoelectronic device 100.

[0150] In various embodiments, a bonding layer 122, for example made of an adhesive or a varnish, can be provided on or above the second barrier layer 108. A cover 124 can be bonded to the second barrier layer 108 by means of the bonding layer 122, for example by gluing it on.

[0151] A coherent bonding layer 122 made of a transparent material can, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles. This allows the coherent bonding layer 122 to act as a scattering layer and lead to an improvement in chromatic aberration and output coupling efficiency.

[0152] Light-scattering particles can be dielectric scattering particles, for example made of a metal oxide, such as silicon dioxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga2O). X Aluminum oxide or titanium oxide. Other particles may also be suitable, provided they have a refractive index different from the effective refractive index of the matrix of the interlocking bonding layer 122, for example, air bubbles, acrylate, or hollow glass spheres. Furthermore, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be used as light-scattering particles.

[0153] The bonding layer 122 can have a layer thickness greater than 1 µm, for example, a layer thickness of several µm. In various embodiments, the bonding layer 122 can comprise or be a lamination adhesive.

[0154] The bonding layer 122 can be configured to have an adhesive with a refractive index lower than that of the cover 124. Such an adhesive can be, for example, a low-refractive-index adhesive such as an acrylate with a refractive index of approximately 1.3. Alternatively, the adhesive can be a high-refractive-index adhesive, for example, one containing high-refractive-index, non-scattering particles and having a layer-thickness-averaged refractive index approximately equal to the mean refractive index of the organic functional layer structure 112, for example, in the range of approximately 1.7 to approximately 2.0. Furthermore, several different adhesives can be provided, forming a sequence of adhesive layers.

[0155] In various embodiments, an electrically insulating layer (not shown) can be applied or may already be present between the second electrode 114 and the conclusive connecting layer 122, for example SiN, for example with a layer thickness in a range of approximately 300 nm to approximately 1.5 µm, for example with a layer thickness in a range of approximately 500 nm to approximately 1 µm, in order to protect electrically unstable materials, for example during a wet chemical process.

[0156] In various embodiments, a coherent bonding layer 122 can be optional, for example if the cover 124 is formed directly on the second barrier layer 108, for example a cover 124 made of glass, which is formed by plasma spraying.

[0157] Furthermore, a so-called getter layer or getter structure, for example a laterally structured getter layer, can be arranged on or above the electrically active area 106 (not shown).

[0158] The getter layer can consist of, or be composed of, a material that absorbs and binds substances harmful to the electrically active region 106. For example, a getter layer can consist of, or be composed of, a zeolite derivative. The getter layer can be translucent, transparent, or opaque and / or impermeable to the electromagnetic radiation emitted and / or absorbed in the optically active region.

[0159] The getter layer can have a thickness greater than approximately 1 µm, for example a thickness of several µm.

[0160] In various embodiments, the getter layer can have a lamination adhesive or be embedded in the bonding layer 122.

[0161] A cover 124 can be formed on or above the bonding layer 122. The cover 124 can be bonded to the electrically active area 106 via the bonding layer 122 and protect it from harmful substances. The cover 124 can be, for example, a glass cover 124, a metal foil cover 124, or a sealed plastic film cover 124. The glass cover 124 can be bonded to the second barrier layer 108 or the electrically active area 106, for example, by means of a glass frit bond (glass soldering / seal glass bonding) using a conventional glass solder in the geometric edge regions of the organic optoelectronic device 100.

[0162] The cover 124 and / or the interlocking bonding layer 122 can have a refractive index (for example at a wavelength of 633 nm) of 1.55.

[0163] Fig. Figures 2A and B show schematic representations of an exemplary embodiment of an optoelectronic component.

[0164] An optoelectronic component device 200 can be an optoelectronic component 100, according to one of the embodiments of the description of the Fig. 1, and an electronic ballast 124 (illustrated in Fig. 2A). The electrical circuit structure 130 and the planar optically active structure 150 can be monolithically integrated into the optoelectronic device 100. In Fig. 2A illustrates monolithic integration using the dashed outline of the optoelectronic component. Fig. 1.

[0165] In one embodiment, the electrical circuit structure 130 and the planar optically active structure 150 can have a common support 102.

[0166] In one embodiment, the electrical circuit structure 130 can be glued onto or over the carrier 102 and / or onto, over or next to the planar optically active structure 150, for example by laminating it.

[0167] The in Fig. Figure 1B illustrates the first electrode 110 and second electrode 114 of the optically active structure 150, which can be connected to a first terminal 204A and a second terminal 204B, respectively, of an electronic ballast 214, for example, to a current output of the electronic ballast 214. The electrical circuit structure 130 is also electrically connected to the electronic ballast 214 via terminals 206A and 206B, for example, to a signal input of the electronic ballast 214. Terminals 206A and 206B can be part of an interface or form one.

[0168] In one embodiment, the terminals 206A, 206B can be electrically connected to an electrical memory (not shown), wherein the output value of the electrical circuit structure 130 is stored in the electrical memory in a way that allows for electrical readout.

[0169] In one embodiment, the interface can be configured for wireless reading of the output value, for example, by incorporating an inductor component. This inductor component can, for example, be configured for radio frequency identification (RFID).

[0170] The electrical circuit structure 130 can have an electrical resistance 202. The resistance value of the electrical resistance 202 is a function of at least one electrical operating parameter of the optically active structure 150. For example, the resistance value 210 can be a function 212 of the operating current 208 of the optically active area (illustrated in Fig. 2B). The maximum operating current (in Fig. 2B, illustrated as plateau 216), may be limited by the design of the electronic ballast 214, for example, because it cannot provide higher operating currents. The functional relationship 212 between the resistance value 210 and the applied operating current 208 may have a linear or non-linear profile, for example, an exponential, hyperbolic, geometric, and / or logarithmic profile; and / or exhibit one or more discontinuities. The functional relationship 212 may depend on the material and / or structural design of the optically active structure 150. Furthermore, the functional relationship 212 may depend on the geometric dimensions of the optically active structure 150, for example, the area of ​​the optically active side of the optically active structure 150.The functional relationship 212 can be used to describe the dependence of the output current, output current density, and / or output voltage of the ballast on, for example, the measurable electrical resistance of the electrical circuit structure. An electrical circuit structure can exhibit a resistance value 202 in the functional relationship 212. In other words, a point on the illustrated curve 212 is determined by the operating parameter of the optically active structure, for example, the operating point of the organic light-emitting diode.

[0171] The operating current 208 can be supplied to the planar optically active structure 150 via the connections 204A, 204B.

[0172] Fig. Figures 3A and B show schematic representations of an exemplary embodiment of an optoelectronic component.

[0173] In addition to the configurations described above, the electrical circuit structure 130 of the optoelectronic device 300 can include a capacitor 302 (illustrated in Fig. 3A) and / or an inductor (inductor component). An inductor can be, for example, a coil. A coil can be, for example, a conductor track arranged in a plane around a winding axis (not illustrated).

[0174] A capacitor 302 has a dielectric between two electrically conductive structures (see also Fig. 6).

[0175] The output value of the electrical circuit structure 130 at the terminals 206A and 206B of the electronic ballast 214 can be a function of the capacitance of the capacitor or a function of the inductance of the inductor component.

[0176] In Fig. 3B is analogous to Fig. Figure 2B illustrates the functional relationship 306 between the operating current 208 provided by the electronic ballast 214 and the capacitance 304 of the capacitor. The functional relationship 306 can be described according to one of the embodiments of the description of the Fig. 2B trained.

[0177] In various embodiments, an electrical circuit structure can include several of the electrical components described above, for example, one or more resistors and / or one or more capacitors. These components can be connected in series to set the output value to terminals 206A and 206B. The current and / or voltage output by the electronic ballast depends on the output value of the electrical circuit structure. The electrical circuit structure is designed such that the electronic ballast receives a signal indicating which current and / or voltage should be supplied to the optically active structure.The specific design of the electrical circuit structure can depend on the design of the electronic ballast of the optoelectronic component, for example, whether the electronic ballast can read a bit pattern. Furthermore, the specific design can depend on how the operating current of the optically active structure 150 is functionally dependent on the output value of the electronic ballast, for example, to provide different functional relationships for different electronic ballasts. This functional dependency can be implemented, for example, by means of the design of an electrical circuit within the electronic ballast.

[0178] Fig. Figures 4A and B show schematic representations of an exemplary embodiment of an optoelectronic component.

[0179] In addition to the configurations described above, the electrical circuit structure 130 of the optoelectronic device 400 can have an electrical conductor structure (illustrated in Fig. 4A).

[0180] The electronic ballast 214 can have several connections for reading the output value of the electrical circuit structure 130 with a line structure (in Fig. 4A is illustrated as connections 402A, 402B, 402C, 402D). The multiple connections can be provided as separate inputs in the electronic ballast.

[0181] Furthermore, the different connections can be designed as contacts for different lines of a cable, with the electronic ballast having a cable input for reading the different lines, for example a pin socket.

[0182] Furthermore, the conductor structure can be designed such that the output value is a function of the electrically conductive lines 408A-D, i.e., dependent on the bit pattern 410 of the different lines 408A-D. Depending on the bit pattern 410 of the electrical lines 408 (illustrated in Fig. 4A by means of the terminals 404A-D and bridging options 406) the electronic ballast 214 can provide different electrical operating parameters at the terminals 204A, 204B of the optically active structure 150.

[0183] In Fig. 4B is an example of a functional relationship (analogous to the description of the Fig. 2B and Fig. 3B) of the operating current of the optically active structure 150 for different bit patterns 410 of the conductor structure is illustrated. The bit pattern is determined by means of a bridging 406 and / or interruption 610 (see Fig. 6) formed by electrical lines 408A-D. For example, when a first terminal 402A is bridged with the second terminal 402B, the electronic ballast 214 receives the information or request to the terminals 204A, 204B of the optically active structure 150 to provide an operating current of 100 mA (in Fig. 4B highlighted by means of the frame 412). The bridging can be formed in the example by electrically connecting the lines 408A, 408B of the conductor structure in the area of ​​the terminals 404A, 404B of the electrical circuit structure in / on the optoelectronic component or by electrically disconnecting an existing electrical connection (see also description of the Fig. 6).

[0184] By means of further bridging 406 (schematically illustrated in Fig. 4A) Further operating parameters of the optically active structure 150 can be transmitted to the electronic ballast. These can then be made available by the electronic ballast 214 at terminals 204A and 204B of the optically active structure 150. Further operating parameters could, for example, include larger or smaller operating currents; different operating voltages 414; and / or different AC frequencies 416.

[0185] The entries of the in Fig. The bit pattern matrix illustrated in Figure 4B represents signals that are further processed by the electronic ballast 214 as information, instructions and / or requests.

[0186] In an optoelectronic component 100 and / or an optically active structure 150 with several electrically independently energizable, light-emitting units, at least one output value of the electrical circuit structure can signal to the electronic ballast 214, for example, which sampling ratio, pulse widths, pulse amplitudes and / or pulse frequencies the current at the terminals 206 of the optically active structure 150 should have.

[0187] A first light-emitting unit can be independently powered by a second light-emitting unit if the optoelectronic component is designed and electrically controllable such that, in a first operating mode, only the first light-emitting unit emits electromagnetic radiation, and in a second operating mode, only the second light-emitting unit emits electromagnetic radiation. This allows, for example, the color coordinates of the electromagnetic radiation emitted within a given sampling time in the first and second operating modes to be adjusted.

[0188] Furthermore, the bit pattern can be combined with the electrical circuit structure configurations described above, and vice versa. For example, at least some of the multiple electrical conductors in the conductor structure can exhibit electrical resistance. In addition to the bit pattern, the voltage drop across the respective conductors can then be used to transmit further information or a command to the electronic ballast. Additionally or instead of electrical resistance, one or more conductors in the conductor structure can exhibit capacitance and / or inductance, or be configured accordingly. In other words, a conductor structure can provide further information to the electronic ballast from the electrical circuit structure, in addition to the bit pattern, via other channels, such as a measurement of the voltage drop across a conductor.

[0189] Fig. Figure 5 shows a schematic representation of a method for forming an optoelectronic component according to various embodiments.

[0190] In various embodiments, the method 500 for manufacturing an optoelectronic component includes the formation 502 of an optically active structure. The planar optically active structure can be configured according to one of the embodiments described in the Fig. 1 to Fig. 4 will be trained.

[0191] Furthermore, the method 500 can include the determination 504 of at least one operating parameter of the optically active structure of the optoelectronic device. However, two or more operating parameters can also be determined simultaneously or sequentially.

[0192] An operating parameter can be one of the following quantities relating to the operation of the optically active structure: the operating current; the operating voltage; the frequency of the operating current in the case of an alternating current; the electrical resistance of the optically active structure; a maximum permissible current or voltage; the initial color point and / or the initial intensity of the emittable or absorbable electromagnetic radiation; a maximum permissible temperature; a maximum operating time; a coefficient that determines the increase or decrease of the operating current or other parameters mentioned above over the lifetime. Optoelectronic components, such as organic light-emitting diodes (OLEDs), become dimmer with increasing operating time. This decrease in intensity can be compensated for by increasing the current.For example, the electronic ballast can be designed in such a way that, after being informed how long the organic light-emitting diode has been operating, the electronic ballast can use the transmitted coefficient to calculate which current should be set after x hours of operation.

[0193] Determining at least one operating parameter (504) can involve measuring a voltage drop, impedance, capacitance, or current of the optically active structure. Furthermore, determining (504) can involve determining the color coordinate and / or intensity of the electromagnetic radiation emitted and / or absorbed by the optically active structure.

[0194] The original chromaticity and / or intensity of the emitted or absorbed electromagnetic radiation can be used by the electronic ballast to compensate for age-related reductions in intensity and / or shifts in the chromaticity of the emitted and / or absorbed electromagnetic radiation. This allows the emitted and / or absorbed electromagnetic radiation to maintain a constant chromaticity and / or intensity throughout the lifetime of the optoelectronic component.

[0195] Determining the operating parameter 504, generating the electrical circuit structure 506, reading the output value in the electronic ballast, and / or adjusting the operating parameter of the current at the terminals of the optically active structures can be performed once or multiple times. The single execution of the aforementioned procedures can occur before and / or during the connection of the optically active structure to the electronic ballast. In contrast, the multiple execution of at least one of the aforementioned procedures can occur during the operation of the optoelectronic component, for example, repeatedly. For instance, this can compensate for age-related changes in the optical and / or electrical properties of the optically active structure by changing at least one operating parameter.

[0196] Furthermore, the method can include the design of an electrical circuit structure taking into account the determined operating parameter. The electrical circuit structure is designed such that its output value is a function of the determined operating parameter. As described above, the output value of the electrical circuit structure can be an electrical resistance value, a capacitance, an inductance, and / or a bit pattern.

[0197] In various embodiments, the formation of the optically active structure 502 can include the formation of an electrical circuit prestructure. The formation of the circuit prestructure can, for example, include the formation of a metallization layer and / or the formation of one or more electrical conductors and / or one or more electrical structures. The circuit prestructure can be formed on and / or adjacent to the optically active structure, for example, on or above an optically inactive area or an optically inactive side of an optically active area. For example, the circuit prestructure can be formed on the cover of the optically active structure and / or on a contact strip of the optically active structure. In one embodiment, a cover is formed on or above the electrical circuit structure such that a contact area of ​​the electrical circuit structure is exposed.

[0198] The electrical circuit prestructure and / or the electrical circuit structure can be electrically isolated from the optically active structure.

[0199] Forming the electrical circuit structure (506) can involve structuring the electrical circuit pre-structure.

[0200] The electrical circuit prestructure can be transformed into the electrical circuit structure through structuring. Structuring can involve the application or removal of a substance or mixture of substances from the electrical circuit prestructure.

[0201] The formation of the electrical circuit structure 130 can, for example, involve the formation of an electrically insulating structure and / or the formation of an electrical bridging structure in the electrical circuit pre-structure.

[0202] Structuring can also involve modifying part of the electrical circuit prestructure, for example, by doping. This can change the electrical conductivity and / or magnetizability of the doped part of the electrical circuit prestructure. This allows, for example, the current path in the electrical circuit structure to be configured according to a predefined current path.

[0203] Furthermore, the formation of the electrically insulating structure and / or the formation of the electrical bridging structure can be designed such that the capacitance of a capacitor; the resistance value of an electrical resistor; the inductance of an inductor device; and / or the bit pattern of a conductor structure are formed with respect to a determined operating parameter.

[0204] Furthermore, the formation of the electrically insulating structure can involve ballistic exposure, for example, laser ablation.

[0205] Ballistic exposure of the areas to be exposed can be achieved, for example, by bombarding the area to be exposed with particles, molecules, atoms, ions, electrons and / or photons.

[0206] Photon bombardment can be implemented, for example, as laser ablation with a wavelength in the range of approximately 200 nm to approximately 1700 nm, for example focused, for example with a focus diameter in the range of approximately 10 µm to approximately 2000 µm, for example pulsed, for example with a pulse duration in the range of approximately 100 fs to approximately 0.5 ms, for example with a power of approximately 50 mW to approximately 1000 mW, for example with a power density of approximately 100 kW / cm² 2 up to approximately 10 GW / cm² 2and, for example, be trained with a repetition rate in a range of approximately 100 Hz to approximately 1000 Hz.

[0207] For example, this can be used to remove part of an electrically conductive material from the electrical circuit prestructure.

[0208] This can, for example, expose an electrically insulating material. This can, for example, redirect the current path. Furthermore, this can, for example, create electrical resistance, such as by narrowing the current path. It can also create the capacitance of a capacitor.

[0209] The electrical circuit prestructure can be formed with a first electrically conductive structure 612A and at least one second electrically conductive structure 612B, wherein the first electrically conductive structure 612A is electrically isolated from the second electrically conductive structure 612B. Furthermore, the first electrically conductive structure 612A can be electrically connected to the second electrically conductive structure 612B by means of an electrical component.

[0210] Further configurations for forming an electrical circuit structure are described in Fig. 6 and the accompanying description.

[0211] Fig. Figures 6A-E show schematic representations of electrical circuit structures according to various embodiments.

[0212] In contrast to or in addition to the above-described design, in Fig. 6A-E Illustrates and describes various designs of electrical circuit structures.

[0213] The electrical circuit structure 130 can be formed by removing part of a metallization layer (illustrated in Fig. 6A and Fig. 6B), for example by means of laser ablation (see description of the Fig. 5). In Fig. 6A and Fig. 6B is the removed part of a metallization layer, indicated by the arrows with reference numeral 602. The area electrically isolated from the metallization layer by means of the removed part 602 (indicated by the arrow with reference numeral 604) can form an electrical circuit structure or electrical circuit prestructure.

[0214] The electrically isolated area 604, for example an electrical conductor, can have a width in a range of approximately 500 µm to approximately 5 mm, for example in a range of approximately 1 mm to approximately 2 mm.

[0215] The electrical connections 206A, 206B can, for example, be electrically connected to the electronic ballast by means of an adhesive bond with electrically conductive adhesive (anisotropic conductive film bonding - ACF bonding) to a flexible printed circuit board (flexible printed circuit board - FlexPCB).

[0216] As described above and below, an electrical resistance 202 can be formed. For example, the electrically isolated region can have a narrowing in the current path, so that the electrical resistance of the electrical circuit structure 130 and thus the voltage drop across the electrical circuit structure 130 is increased.

[0217] In Fig. Figure 6A illustrates an electrical resistor 202 made of a thin metal, wherein the metallization 604 is electrically isolated from the surrounding metallization 618 by means of laser ablation lines 602. The electrical resistance from the first terminal 206A to the second terminal 206B identifies the optoelectronic component for the electronic ballast. This can then automatically adjust the electrical power supply with respect to the optically active structure and provide the correct current to electrically connect and operate the optoelectronic component. Each optoelectronic component can, for example, have an electrical circuit structure with a component-specific electrical resistance.

[0218] Furthermore, a conductor structure with multiple electrical conductors 408 can be formed by removing a metallization layer (illustrated in Fig. 6B). A conductor can have a first terminal 606 and a second terminal 608. The electrical conductors 408 are electrically insulated from each other. By applying an electrical voltage across the first terminal 606 and the second terminal 608, an electric current can flow through the electrical conductors 408.

[0219] By removing part of a line 408 (in Fig. (Illustrated by reference numeral 610 in Figure 6B), the electrical connection from the first terminal 606 to the second terminal 608 can be electrically interrupted. Furthermore, by forming an electrical bridge 616, electrically isolated lines 408 can be electrically connected. This allows a bit pattern (see description of the Fig. 4B) can be configured as the output value of the electrical circuit structure 130. In one embodiment, the lines 408 of the conductor structure can have a common first connection 606. This simplifies the configuration of the bit pattern.

[0220] An interruption in an electrical conductor can be created by removing a portion of the conductor in the current path, thus preventing current flow. However, an interruption can also be created by placing an electrically insulating material between two contacts instead of an electrically conductive one.

[0221] An electrical circuit prestructure can comprise a first electrically conductive structure 612A and a second electrically conductive structure 612B. The first electrically conductive structure 612A and the second electrically conductive structure 612B can be configured as or comprise electrical terminals (206A, 206B) of the electrical circuit structure 130 (illustrated in Fig. 6C and Fig. 6D). Electrically between the first electrically conductive structure 612A and the second electrically conductive structure 612B, further electrically conductive and / or electrically insulating structures may be formed.

[0222] The formation of the electrical circuit structure 130 can involve the formation of an electrical circuit pre-structure 620.

[0223] The formation of a metallization layer, from or on which the electrical components of the electrical circuit structure are formed, can be carried out in parallel with the formation of the optically active structure, for example.

[0224] This can be formed, for example, by removing part 610 of a metallization layer. Removing part 610 of the metallization layer can be a step in forming the electrical circuit prestructure and / or in forming the electrical circuit structure. For example, removing part 610 of the metallization layer when forming the electrical circuit prestructure 620 can form a general circuit structure 130 that is suitable for a variety of optoelectronic components and / or optically active structures. After determining at least one operating parameter of the optically active structure, the output value of the electrical circuit structure can be fine-tuned, for example, by adjusting the value of an electrical resistor, a capacitor, an inductor, and / or the bit pattern.

[0225] For example, in a capacitor 302, the capacitance of at least one of the conductive structures can be finely adjusted by means of an electrically insulating separation 614 (illustrated in Fig. 6C).

[0226] Electrically, a third electrically conductive structure 612C and a fourth electrically conductive structure 612D can be formed between the first electrically conductive structure 612A and the second electrically conductive structure 612B. The multiple electrically insulated electrically conductive structures 612 in the electrical circuit structure can be electrically connected to each other by means of a bridging structure. This allows for the flexible formation of different electrical resistances, capacitors, conductor structures, and / or inductances (illustrated in Fig. 6D).

[0227] The bridging structure 616 can form an electrical connection between the first electrically conductive structure 612A and the second electrically conductive structure 612B. However, at least one electrical component as described above can be formed electrically between the first electrically conductive structure 612A and the second electrically conductive structure 612B. The bridging structure 616 can, for example, be configured such that the output value of the electrical circuit structure is set by means of the bridging structure.

[0228] Forming the electrically conductive connection can involve applying an electrically conductive material between the first electrically conductive structure 612A and the second electrically conductive structure 612B such that an electrical connection is formed between the first electrically conductive structure 612A and the second electrically conductive structure 612B (illustrated in Fig. 6D).

[0229] Forming the electrical circuit structure can involve forming an electrically insulating structure 610 between the first electrically conductive structure 612A and the second electrically conductive structure 612B. Forming an electrically insulating structure 610, 614 can, for example, involve applying an electrically insulating material or exposing an electrically insulating material (illustrated in Fig. 6B-E) and / or involve the conversion of an electrically conductive substance into an electrically conductive substance, for example doping, oxidation, nitration.

[0230] The formation of the electrically insulating structure 610, 614 can involve removing a portion 614, 610 of the third electrically conductive structure such that a fourth electrically conductive structure and a fifth electrically conductive structure are formed. For example, the third electrically conductive structure can be electrically isolated into two regions. In other words, the fourth electrically conductive structure can be electrically isolated from the fifth electrically conductive structure.

[0231] By removing part 614, 610 of the third electrically conductive structure, the current path through the electrical circuit structure 130 can be changed (illustrated in Fig.6E), which allows the output value of the electrical circuit structure to be set.

[0232] Various embodiments provide an optoelectronic component, an optoelectronic component device, and a method for fabricating an optoelectronic component, enabling the design and operation of a technically simpler organic optoelectronic component. This saves the user of organic optoelectronic components numerous research tasks, calculations, technical decisions, and purchases. The user can correctly adjust or configure the system consisting of the optoelectronic component and the electronic ballast by simply connecting the electrical circuit structure, for example, coding pins of the electrical circuit structure, to a terminal of the electronic ballast.Furthermore, incorrect settings regarding the maximum current can be reduced, thereby decreasing warranty claims, for example, due to accelerated OLED aging or premature OLED failure due to overcurrent. In various configurations, the electronic circuit structure can be designed cost-effectively, for example, without complex and expensive photolithographic processes. Additionally, the optoelectronic component can be designed to be self-identifying with respect to the electronic ballast. This eliminates the need for further steps when connecting the optoelectronic component to the electronic ballast, such as the conventional connection / clamping of an electrical resistor to two terminals on the electronic ballast.

Claims

[1] Optoelectronic component (100) comprising: a planar optically active structure (150) and an electrical circuit structure (130), • wherein the planar optically active structure (150) is configured to receive and / or provide electromagnetic radiation; • wherein the electrical circuit structure (130) is configured to provide an output value, the output value being dependent on at least one operating parameter of the optically active structure (150); and • wherein the electrical circuit structure (130) remains free of the operating current (208) which is supplied to the planar optically active structure (150) for the operation of the planar optically active structure (150). [2] Optoelectronic device (100) according to claim 1, wherein the planar optically active structure (150) comprises a first electrode (110), a second electrode (114) and an organic functional layer structure (112), wherein the organic functional layer structure (112) is formed between the first electrode (110) and the second electrode (114). [3] Optoelectronic device (100) according to one of claims 1 or 2, wherein the optoelectronic device (100) is configured as an organic light-emitting diode, an organic solar cell and / or an organic photodetector. [4] Optoelectronic component (100) according to one of claims 1 to 3, wherein the optoelectronic component (100) is designed as a surface component. [5] Optoelectronic component (100) according to one of claims 1 to 4, wherein the electrical circuit structure (130) comprises one or more of the following electrical structures: • an electrical resistor (202), wherein the output value depends on the electrical resistance value of the electrical resistor (202); • has a capacitor (302), wherein the output value depends on the capacitance of the capacitor (302); • has an inductor component, the output value of which depends on the inductance of the inductor component; and / or • a conductor structure with multiple electrical lines (408) such that the output value depends on the bit pattern (410) of the multiple electrical lines (408). [6] Optoelectronic component (100) according to any one of claims 1 to 5, wherein the optoelectronic component (100) comprises a first connection (204A) and a second connection (204B) for providing an operating current (208) to the planar, optically active structure (150). [7] Method (500) for manufacturing an optoelectronic device (100) comprising the method (500): • Forming (502) a planar optically active structure (150), wherein the planar optically active structure (150) is formed to receive or provide electromagnetic radiation; • Determine (504) at least one operating parameter of the optically active structure (150) of the optoelectronic device (100); and • Designing (506) an electrical circuit structure (130) taking into account the determined operating parameter such that the output value of the electrical circuit structure (130) is a function of the determined operating parameter, wherein an optoelectronic component (100) is manufactured according to one of claims 1 to 6. [8] Method (500) according to claim 7, wherein forming (502) the optically active structure (150) comprises forming an electrical circuit prestructure (620). [9] Method (500) according to one of claims 7 or 8, wherein forming (506) the electrical circuit structure (130) comprises structuring the electrical circuit prestructure (620). [10] Method (500) according to claim 9, wherein forming (506) the electrical circuit structure (130) comprises forming an electrically insulating structure (610, 614) and / or forming an electrical bridging structure (616) in the electrical circuit pre-structure (620). [11] Method (500) according to claim 10, wherein the formation of the electrically insulating structure (610, 614) comprises laser ablation. [12] Method (500) according to one of claims 9 to 11, wherein forming the electrical circuit prestructure (620) comprises forming an electrically conductive structure, wherein forming the electrically insulating structure (610, 614) comprises removing a part (614, 610) of an electrically conductive structure such that a first electrically conductive structure and a second electrically conductive structure are formed. [13] Method (500) according to claim 12, wherein the current path through the electrical circuit structure (130) is changed by removing part (614, 610) of the electrically conductive structure. [14] Method (500) according to any one of claims 7 to 13, • wherein the formation of the optically active structure (150) is a formation of a first electrode (110); • the formation of an organic functional layer structure (112) on the first electrode (110); and • exhibits the formation of a second electrode (114) on the organic functional layer structure (112). [15] Method (500) according to any one of claims 7 to 14, wherein the optoelectronic device (100) is designed as an organic light-emitting diode, an organic solar cell and / or an organic photodetector. [16] Optoelectronic component device (200, 300, 400) comprising: • an optoelectronic component (100) according to any one of claims 1 to 6; • an electronic ballast (214) configured to supply an electric current to the planar optically active structure (150) and / or to receive an electric current from the optically active structure (150); • wherein the electronic ballast (214) has a first terminal (204), a second terminal (206) and a detection device, wherein the detection device is electrically coupled to the first terminal (204) and the second terminal (206); • wherein the planar optically active structure (150) is electrically connected to the first terminal (204), and the electrical circuit structure (130) is electrically connected to the second terminal (206); • wherein the detection device is set up to determine the output value of the electrical circuit structure (130) and, by means of the determined output value, changes at least one operating parameter of the optically active structure (150) with respect to a predetermined operating parameter.

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