Method for manufacturing an optoelectronic component

Abstract

Method (300) for manufacturing an optoelectronic component comprising method (300): • Providing a support (102) wherein the support (102) has a flat, unstructured surface, • Forming (302) an electrode (104) on or above the support (102), wherein - the electrode (104) is formed as a closed electrode layer with a flat, unstructured interface on the side of the support (102), • Structuring the electrode by forming a mask structure (506) on or above the electrode and etching the masked surface of the electrode (104), wherein the formation of the mask structure (506) comprises an arrangement of particles (402, 706, 710) on the electrode (104), • Forming (304) an organic functional layer structure (108) to emit electromagnetic radiation or convert electromagnetic radiation into an electric current; - wherein the structured electrode (104) is formed with a surface (114) that reflects electromagnetic radiation, and - wherein the organic functional layer structure (108) is formed on or above the reflective surface (114) of the structured electrode (104) and is electrically coupled to it.

Description

[0001] Various embodiments of an optoelectronic component and a method for manufacturing an optoelectronic component are provided.

[0002] Publication EP 1997166 B1 describes a composite electrode for a light-emitting device.

[0003] Publication EP 2637480 A1 describes an organic light-emitting diode, a method for its manufacture, an image display device and a lighting device.

[0004] Document US 2004 / 0 012 980 A1 describes a luminous element, as well as a display device and a lighting device with this luminous element.

[0005] Publication WO 2013 / 061 237 A1 describes a transparent OLED device with a structured cathode and a method for its manufacture.

[0006] Organic-based optoelectronic components, such as organic light-emitting diodes (OLEDs), are increasingly used in general lighting, for example as area light sources.

[0007] An organic optoelectronic device, such as an OLED, can have an anode and a cathode with an organic functional layer system in between. This organic functional layer system can include one or more emitter layers in which electromagnetic radiation is generated, one or more charge-generating layer structures (CGLs) consisting of two or more CGLs for charge-generating technology, one or more hole-blocking layers (HTLs), and one or more electron-blocking layers (ETLs) to direct current flow.

[0008] So far, there are two approaches to increasing light output in organic light-emitting diodes: external output and internal output.

[0009] External coupling refers to devices that increase the proportion of light extracted from the substrate and converted into emitted light. Such a device could be, for example, a film with scattering particles or a surface texture, such as microlenses. The film can be applied to the substrate's outer surface. Other possibilities include directly structuring the substrate's outer surface or incorporating scattering particles into the substrate, such as a glass substrate. Some of these approaches, such as the scattering film, have already been used in OLED lighting modules, or their scalability has been demonstrated. However, external coupling can have two significant drawbacks. The extraction efficiency can be limited to approximately 60% to 70% of the light transmitted through the substrate.Furthermore, the appearance of the organic light-emitting diode (OLED) can be significantly influenced by external extraction methods. For example, the applied layers or films can create a milky-looking and / or diffusely reflective surface on the OLED.

[0010] Internal extraction refers to devices that extract light guided in the electrically active region of an organic light-emitting diode (OLED), such as the organic functional layer system and / or the transparent electrodes. In a conventional internal extraction device, a low-refractive-index grating can be applied to or over one of the electrodes of the optoelectronic device, for example, an indium tin oxide (ITO) electrode. The grating has structured regions composed of a low-refractive-index material. In another conventional internal extraction device, a scattering layer can be applied to or over a transparent electrode, such as an ITO anode. The scattering layer has a polymer matrix with distributed scattering centers.The matrix has a refractive index of approximately 1.5, and the scattering centers have a higher refractive index than the matrix.

[0011] Internal couplings on the second electrode have the disadvantage that they are only formed at the end of the value chain, i.e., after the organic functional layer system between the first and second electrodes has been formed. Conventional couplings, in which the first electrode is formed on the coupling structure, have the disadvantage that these internal coupling structures are complex to manufacture and / or can impair the durability of the device.

[0012] These problems are solved by an optoelectronic component and a method for manufacturing an optoelectronic component according to the independent patent claims.

[0013] Various embodiments of an optoelectronic component and a method for manufacturing an optoelectronic component are provided, enabling increased light coupling and / or light extraction for optoelectronic components, such as organic light-emitting diodes (OLEDs). Furthermore, this allows the extraction to be implemented prior to the formation of the organic functional layer structure, thus earlier in the value chain. If the extraction proves ineffective, it can be discarded with less upfront financial investment.

[0014] An optoelectronic device is provided, comprising: an electrode; and an organic functional layer structure configured to emit electromagnetic radiation or convert electromagnetic radiation into an electric current; wherein the electrode has a surface reflective with respect to electromagnetic radiation, and wherein the organic functional layer structure is formed on or above the reflective surface of the electrode and is electrically coupled to it; and wherein the reflective surface has a structuring.

[0015] In one embodiment, the electrode may have a metal or be formed from it, for example as a metal coating, metallization layer or a transparent electrically conductive coating, for example made of a transparent electrically conductive oxide, for example hole-conducting (p-TCO) or electron-conducting (n-TCO).

[0016] The optoelectronic component further comprises a support, with the electrode being formed on or above the support. The support can be intrinsically hermetically sealed with respect to water and / or oxygen, or it can have a barrier layer.

[0017] In one embodiment, the substrate can have a structured surface, and the structuring of the electrode surface can be conformal to the structured surface of the substrate. A conformally designed electrode can be understood as a substantially plane-parallel reproduction of the substrate's structure in the electrode's topography. This allows the substrate's structure to be transferred to the electrode's surface topography. For example, the electrode can have a substantially constant layer thickness on the substrate.

[0018] The structured surface of the carrier can exhibit one or more features of the electrode structuring described below in various configurations.

[0019] In one embodiment, the structured electrode can consist of a single layer. Alternatively, the electrode can be designed as a multilayer structure (layered structure) of different layers. The structuring of the electrode is formed by the layered structure itself, i.e., by structuring the layered structure. Thus, the structuring is not achieved solely by applying a substance or mixture of substances to the electrode that differs from the substance or mixture of substances already present in the electrode. This is different, for example, from a lift-off process where a polymer layer is formed on a silver electrode.

[0020] The electrode has a macrostructured region and a matrix region. The macrostructured region can be completely surrounded by the matrix region on the reflective surface. The macrostructured region can also have several non-contiguous areas, for example, isolated regions. The macrostructured region can also be surrounded by a region with different optical properties.

[0021] The macrostructured region has a different structure than the matrix region. This different structure leads to different optical properties, such as a different reflectivity and / or a different scattering cross-section. Therefore, the macrostructured region can appear optically different from the matrix region.

[0022] In one configuration, the macrostructured area can be designed to represent information, for example, in the form of text, a pictogram, an ideogram, and / or a symbol. In other words, the macrostructured area can have a different structure than the matrix area. This different structure can, for example, lead to different optical properties, such as a different reflectivity and / or a different scattering cross-section. As a result, the macrostructured area can be optically distinct from the matrix area. Therefore, the macrostructured area can be designed to represent information, for example, in the form of text, a pictogram, an ideogram, and / or a symbol.

[0023] The structuring is designed such that the reflected electromagnetic radiation is diffusely reflected. This allows the scattering cross-section of the reflected electromagnetic radiation to be altered at the interface between the reflective, structured surface of the electrode and the organic functional layer structure. This enables, for example, more light to be coupled out of an organic light-emitting diode (OLED) or more electromagnetic radiation to be absorbed in a solar cell or photodetector, for instance, by changing the optical path length within the organic functional layer structure and / or the angle of incidence of the electromagnetic radiation on the electromagnetic radiation-absorbing regions within the organic functional layer structure.

[0024] In one embodiment, the structuring can exhibit a periodic arrangement of structures. The structure can also be described as a distant part of the electrode and, for example, be a hole (such as a blind hole) or a trench structure. The periodic arrangement can, for example, exhibit order in the near or far range, such as a crystalline pattern with repeating spacing between adjacent structures. A distant part can also be described as at least a partially open part of the electrode. The structuring can be understood as the entirety of the structures, for example, as the entirety of the holes, or as an arrangement of holes.

[0025] In one embodiment, the structuring can have a random arrangement of structures, for example by not controlling the arrangement of the structures during the formation of the structures.

[0026] The structuring and the reflective surface consist of the same material, or are formed from it, by creating the reflective surface through the structuring of the electrode surface.

[0027] In one embodiment, the structuring can be formed as an arrangement of holes in the electrode or have an arrangement of holes. In other words, the structuring can be formed by removing at least part of the electrode.

[0028] In one embodiment, the removed parts can be designed as holes in the electrode, for example as blind holes and / or trenches.

[0029] In one embodiment, the holes can have a depth greater than 1 / 10 of the wavelength of the reflected electromagnetic radiation, for example, greater than half the wavelength of the reflected electromagnetic radiation. This can lead to optical interference between the reflected electromagnetic radiation and the incident electromagnetic radiation.

[0030] In one embodiment, the holes can have a depth greater than the coherence length of the coherent component of the reflected electromagnetic radiation. This prevents the electromagnetic radiation reflected from different areas of the electrode from interfering with each other.

[0031] In one embodiment, the holes can have a depth that is smaller than the coherence length of the coherent component of the reflected electromagnetic radiation. This allows the electromagnetic radiation reflected from different areas of the electrode to be superimposed in an interfering manner.

[0032] The structuring is designed in such a way that the roughness of the reflective surface of the electrode is increased, for example with respect to the interface of the electrode with the support, where the support is unstructured and the electrode is structured.

[0033] In one embodiment, the structuring can have a mask structure such that the mask structure forms part of the reflective surface. This allows a portion of the electromagnetic radiation to be reflected by the electrode and another portion by the mask structure. The mask structure can, for example, have a higher reflectivity than the electrode or exhibit another effect described below.

[0034] In one embodiment, the structured electrode can have holes in the electrode, with the mask structure being formed between the holes on the electrode.

[0035] In one embodiment, the mask structure can contain or be formed from a phosphor. The phosphor can, for example, absorb the reflected and / or transmitted electromagnetic radiation and re-emit it with a Stokes shift or an anti-Stokes shift of the wavelength of the electromagnetic radiation. This allows the optical properties of the optoelectronic component in the area with the mask structure to be modified, for example, the color coordinates of the emitted electromagnetic radiation. In various embodiments, a phosphor can, for example, be made of ce 3+ doped grenades such as YAG:Ce and LuAG, for example (Y, Lu)3(Al,Ga)5O 12 :Ce 3+ ; Eu 2+ doped nitrides, for example CaAlSiN3:Eu 2+ , (Ba,Sr)2Si5N8:Eu 2+ ; Eu 2+ doped sulfides, SIONE, SiAlON, orthosilicates, for example (Ba,Sr,Ca)2SiO4:Eu 2+; Contain or be composed of chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate.

[0036] In one embodiment, the mask structure can be designed to enhance adhesion between the organic functional layer structure and the reflective surface. For example, the mask structure can exhibit a lower surface tension and / or a lower work of adhesion than the reflective surface of the electrode and / or the layer of organic functional layers that is in physical contact with the reflective surface of the electrode.

[0037] In one embodiment, the electrode and the organic functional layer structure can be designed such that they exhibit different moduli of elasticity. This can lead to the formation of thermal and / or mechanical stresses when the ambient temperature and / or mechanical stress is applied to the optoelectronic component. This can reduce the durability of the optoelectronic component.

[0038] In one embodiment, the mask structure can be designed to be mechanically and / or thermally relaxing with respect to the different elastic moduli of the reflective surface, the layer of organic functional layer structure arranged on the reflective surface, and / or the organic functional layer structure itself. This allows the mask structure to contribute to the reduction of stresses.

[0039] In one embodiment, the optoelectronic component can be designed as an organic optoelectronic component.

[0040] In one embodiment, the optoelectronic component can be designed as a planar component, i.e., it has a planar optically active area with at least one optically active side. A planar optically active area can be understood as a substantially two-dimensional spatial extent of the optoelectronic component, i.e., one spatial extent is significantly smaller than at least two other spatial extents.

[0041] In one embodiment, the optoelectronic component can be designed as a light-emitting diode, solar cell and / or photodetector.

[0042] A method for fabricating an optoelectronic device is provided, comprising: providing a support, wherein the support has a flat, unstructured surface; forming an electrode on or over the support, wherein the electrode is formed as a closed electrode layer with a flat, unstructured interface on the support side; structuring the electrode by forming a mask structure on or over the electrode and etching the masked surface of the electrode, wherein the formation of the mask structure comprises arranging particles on the electrode; forming an organic functional layer structure for emitting electromagnetic radiation or converting electromagnetic radiation into an electric current;wherein the structured electrode is formed with a surface reflective with respect to electromagnetic radiation, and wherein the organic functional layer structure is formed on or above the reflective surface of the structured electrode and is electrically coupled to it.

[0043] In one embodiment of the process, the electrode can be made of or formed from a metal.

[0044] The method further includes the provision of a support, wherein the electrode is formed on or above the support.

[0045] In one embodiment of the method, the carrier can have a structured surface and the formation of the structured electrode can involve conformal formation of the electrode on the structured surface of the carrier.

[0046] The structured surface of the carrier can be formed in various configurations using one or more of the methods described below for structuring the electrode.

[0047] The formation of the electrode involves forming the electrode on the support and structuring the electrode.

[0048] In one embodiment of the process, the structuring of the electrode can involve a maskless lithographic process, such as laser writing or laser ablation. For example, areas can be removed from the electrode by vaporizing or "blasting" them off.

[0049] In one embodiment of the process, the structuring of the electrode can involve a photolithographic process.

[0050] In one embodiment of the process, the structuring of the electrode can involve an imprinting lithographic process.

[0051] In one embodiment of the process, the structuring of the electrode can involve a nanoimprint lithographic process.

[0052] The structuring process involves the formation of a mask structure on or above the electrode.

[0053] The formation of the mask structure involves an arrangement of particles on the electrode.

[0054] In one embodiment of the process, the particles can be made of a different substance or be formed from a different substance than the electrode.

[0055] In one embodiment of the process, the particles can be designed in such a way that they have a different etching rate than the material or mixture of materials of the electrode with respect to an etching medium.

[0056] In one embodiment of the method, the particles can be magnetizable and the formation of the mask structure can involve arranging the magnetizable particles in a magnetic field.

[0057] In one embodiment of the method, the particles can be electrically polarizable and the formation of the mask structure can involve arranging the polarizable particles in an electric field.

[0058] In one embodiment of the method, at least one first type of particle and one second type of particle can be arranged on the electrode.

[0059] In one embodiment of the process, the first type of particle can consist of a different substance than the second type of particle.

[0060] In one embodiment of the process, the first type of particle can have a different average diameter than the second type of particle.

[0061] In one embodiment of the method, the first type of particle can be arranged in a different area on the electrode than the second type of particle.

[0062] In one embodiment of the method, the particles can be arranged in a macrostructured area and a matrix area, wherein the macrostructured area is surrounded by the matrix area in the reflective surface.

[0063] In one embodiment of the method, at least one different type of particle can be arranged in the macrostructured area on the electrode, the particles can be arranged differently and / or the particles can be processed differently than in the matrix area.

[0064] In one embodiment of the procedure, the mask structure in the macrostructured area can be designed in such a way that information can be represented, for example in the form of a letter, a pictogram, an ideogram and / or a symbol.

[0065] In one embodiment of the method, the particles can be applied to the electrode in a periodic arrangement and / or onto the electrode.

[0066] In one embodiment of the method, the particles can be applied to the electrode in a random arrangement and / or onto the electrode.

[0067] In one embodiment of the process, the particles can be arranged in a structured manner after being applied to the electrode.

[0068] In one embodiment of the process, the particles can be arranged in a structured manner during application to the electrode.

[0069] In one embodiment of the process, the particles can have a mean diameter in a range of approximately 0.05 µm to approximately 100 µm.

[0070] In one embodiment of the process, the particles may contain or be formed from a substance from the group of substances: for example, as a homopolymer or copolymer: a polystyrene, a polymethacrylate, a poly(N-isopropylacrylamide), a dextran, a polylactic acid, a silicate, a polyglucosamine, a polyethyleneimine; gold, silver, platinum, copper, iron, iron oxide, magnesium, aluminum.

[0071] In one embodiment of the process, the particles can have a core and a shell, wherein the core comprises or is formed from a different substance or copolymer than the shell.

[0072] In one embodiment of the process, the particles can have a magnetizable core.

[0073] In one embodiment of the process, the particles can have an electrically polarizable core.

[0074] In one embodiment of the process, the particles can contain a phosphor or be formed from one.

[0075] In one embodiment of the process, the particles can be arranged in a monolayer on the electrode.

[0076] In one embodiment of the process, the particles can be designed to enhance adhesion with respect to the organic functional layer structure to the reflective surface.

[0077] In one embodiment of the process, the electrode and the organic functional layer structure can be designed in such a way that they have different moduli of elasticity.

[0078] In one embodiment of the method, the structuring can include the formation of a mask structure on or above the electrode, wherein the formation of the mask structure includes the arrangement of particles on the electrode and wherein the particles are designed to be mechanically and / or thermally relaxing with respect to the different elastic moduli of the reflecting surface, the layer of the organic functional layer structure arranged on the reflecting surface and / or the organic functional layer structure.

[0079] In one embodiment of the process, the mean diameter of the particles can be reduced after application to the electrode, for example by increasing the temperature or by using a plasma.

[0080] In one embodiment of the method, the particles can be arranged in a macrostructured region and a matrix region, wherein the mean diameter and / or the mean spacing of the particles in the macrostructured region are modified differently than in the matrix region, for example, by applying a different temperature and / or a different exposure time to the temperature on the particles in the macrostructured region. For example, plasma treatment of the particles can be carried out using a mask with mask openings. The mask can be designed to be correlated with the macrostructured region.

[0081] For example, more plasma can hit the particles in the area of ​​the mask opening.

[0082] In one embodiment of the method, the change in temperature can involve an increase in temperature in a range from approximately 10 °C to approximately 400 °C.

[0083] During the process, holes are formed between the particles in the electrode using an etching medium, for example as blind holes.

[0084] In one embodiment of the process, the etching medium can be configured as a solvent of the electrode material, a plasma, or a ballistic bombardment of the electrode.

[0085] In one embodiment of the process, the structuring can involve the formation of holes in the electrode.

[0086] In one embodiment of the method, the holes can be formed with a depth greater than 1 / 10 of the wavelength of the reflected electromagnetic radiation, for example greater than half of the reflected electromagnetic radiation.

[0087] In one embodiment of the method, the holes can be formed with a depth that is greater than the coherence length of the coherent component of the reflected electromagnetic radiation.

[0088] In one embodiment of the method, the holes can be formed with a depth that is smaller than the coherence length of the coherent component of the reflected electromagnetic radiation.

[0089] In one embodiment of the method, the electrode can be structured in such a way that the roughness of the reflective surface of the electrode is increased with respect to the interface between the electrode and the support.

[0090] In one embodiment of the method, the mask structure can be removed after structuring the electrode, so that the structuring and the reflective surface have the same material or are formed from it, or so that the structuring is formed as holes in the electrode or has holes.

[0091] In one embodiment of the process, the structured electrode can be formed from a single layer, for example by structuring a layer or forming it on a structured substrate.

[0092] In one embodiment of the process, the organic functional layer structure can be formed on the structured electrode and the particles, with the particles and the structured electrode forming the reflective surface. After structuring the electrode, the remaining particles can form a mask structure, or be described as such.

[0093] In one embodiment of the method, the electrode can be structured in such a way that the reflected electromagnetic radiation is diffusely reflected.

[0094] In one embodiment of the method, the optoelectronic component can be designed as an organic optoelectronic component.

[0095] In one embodiment of the method, the optoelectronic component can be designed as a surface component.

[0096] In one embodiment of the method, the optoelectronic component can be designed as a light-emitting diode, solar cell and / or photodetector.

[0097] Examples of implementation are shown in the figures and are explained in more detail below.

[0098] They show Fig. 1 a schematic representation of an area of ​​an optoelectronic component according to various embodiments; Fig. 2 a schematic representation of an optoelectronic component according to various embodiments; Fig. 3. A description of the method for manufacturing an optoelectronic component according to various embodiments; Fig. 4A-D schematic representations of an optoelectronic component in the method for manufacturing an optoelectronic component; Fig. 5 a schematic representation of an optoelectronic component in the method for manufacturing an optoelectronic component; Fig. 6 a schematic representation of an optoelectronic component in the method for manufacturing an optoelectronic component; Fig. 7 a schematic representation of an optoelectronic component in the method for manufacturing an optoelectronic component according to various embodiments; Fig. 8A, B schematic representations of an optoelectronic component according to various examples; and Fig. 9 a representation of a carrier structured by means of a process.

[0099] The following detailed description refers to the accompanying drawings, which form part of this document and show specific embodiments for illustrative purposes. In this context, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used to refer to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, this directional terminology serves only for illustration and is in no way restrictive.

[0100] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0101] Various optoelectronic components are described, each comprising an optically active region. This optically active region can absorb electromagnetic radiation and convert it into a photocurrent; or, by applying a voltage to the optically active region, emit electromagnetic radiation. In various embodiments, the electromagnetic radiation can have a wavelength range including X-rays, ultraviolet (UV) radiation, visible light, and / or infrared (IR) radiation.

[0102] The provision of electromagnetic radiation can be understood as the emission of electromagnetic radiation. In other words, the provision of electromagnetic radiation can be understood as the emission of electromagnetic radiation by means of an applied voltage to an optically active area.

[0103] The absorption of electromagnetic radiation can be understood as the absorption of electromagnetic radiation. In other words, the absorption of electromagnetic radiation can be understood as the absorption of electromagnetic radiation and the formation of a photocurrent from the absorbed electromagnetic radiation. In other words, the absorption of an electromagnetic voltage can be understood as the conversion of electromagnetic radiation into an electric current and / or an electric voltage.

[0104] An electromagnetic radiation-emitting structure can be configured in various ways, including electromagnetic radiation-emitting semiconductor structures and / or as an electromagnetic radiation-emitting diode, an organic electromagnetic radiation-emitting diode, an electromagnetic radiation-emitting transistor, or an organic electromagnetic radiation-emitting transistor. The radiation can be, for example, visible light, ultraviolet radiation, and / or infrared radiation. In this context, the electromagnetic radiation-emitting component can be configured, for example, as a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor.The electromagnetic radiation-emitting component can be part of an integrated circuit in various configurations. Furthermore, multiple electromagnetic radiation-emitting components can be provided, for example, housed in a common package.

[0105] In various embodiments, an optoelectronic structure can be configured as an organic light-emitting diode (OLED), an organic field-effect transistor (OFET), and / or organic electronics. The organic field-effect transistor can be a so-called "all-OFET," in which all layers are organic. An optoelectronic structure can comprise an organic functional layer system, also referred to as an organic functional layer structure. The organic functional layer structure can consist of or be composed of an organic substance or mixture of organic substances, which, for example, is designed to generate electromagnetic radiation from an applied electric current.

[0106] An optoelectronic component with an optically active area can have one or more optically active sides. A planar component with two planar, optically active sides can be transparent or translucent in the direction connecting the optically active sides. A planar component can also be referred to as a planar device. The optically active area can also have one planar, optically active side and one planar, optically inactive side, for example, an organic light-emitting diode (OLED) configured as a top emitter or bottom emitter. The optically inactive side can be provided with a mirror structure, such as one with electrically switchable reflectivity, and / or an opaque material or mixture, for example, for heat dissipation; this allows the beam path of the component to be directed.

[0107] In various embodiments, an optoelectronic component is provided. The optoelectronic component can be designed as an organic optoelectronic component. Furthermore, the optoelectronic component can be designed as a planar component. Additionally, the optoelectronic component can be designed as a light-emitting diode (LED), a solar cell, and / or a photodetector. The optoelectronic component comprises an electrode 104 and an organic functional layer structure 108 (illustrated in Figure 1). Fig. 1).

[0108] The organic functional layer structure 108 is designed to emit electromagnetic radiation or to convert electromagnetic radiation into an electric current.

[0109] A portion of the electromagnetic radiation can fall on electrode 104 (in Fig. Figure 1 illustrates the electromagnetic radiation emitted or not absorbed by the organic functional layer structure 108, indicated by the arrow with reference numeral 110. The electrode 104 has a reflective surface 114 with a structure 106 with respect to the incident electromagnetic radiation 110. The structure 106 can be configured such that the electromagnetic radiation 110 incident on the structure 106 is diffusely reflected (in Fig. 1 illustrated by means of the arrows with reference symbol 112).

[0110] The electrode 104 with structuring 106 can be formed from a single layer, for example, a structured, electrically conductive layer. The structuring 106 can have a periodic and / or random arrangement of structures. The electrode 104 can be made of or formed from a metal, for example, transparent or opaque, for example, as an anode or cathode.

[0111] Further embodiments of electrode 104 are described in the description of the Fig. 2 illustrated.

[0112] The organic functional layer structure 106 is formed on or above the reflective surface 114 of the electrode 104 and electrically coupled to it. Various embodiments of the organic functional layer structure 106 are described in the section on Fig. 2 illustrated.

[0113] The optoelectronic component can further comprise a support 102, wherein the electrode 104 is formed on or above the support 102. The support 102 can, for example, be designed as a hermetically sealed substrate. Various embodiments of the support 102 are described in the following section. Fig. 2 illustrated.

[0114] The optoelectronic component 200 (illustrated in Fig. 2) can be designed as an organic light-emitting diode 200, an organic photodetector 200 or an organic solar cell.

[0115] An organic light-emitting diode (OLED) 200 can be configured as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the electrically active area through the substrate. In a top emitter, light is emitted from the top of the electrically active area and not through the substrate.

[0116] A top emitter and / or bottom emitter can also be optically transparent or optically translucent; for example, each of the layers or structures described below can be transparent or translucent.

[0117] The optoelectronic device 200 has a hermetically sealed substrate 230, an active area 206 and an encapsulation structure 228.

[0118] The hermetically sealed substrate 102 can have a carrier 102, a first barrier layer 204 and an intermediate structure 226.

[0119] The active region 206 is an electrically active region 206 and / or an optically active region 206. The active region 206 is, for example, the region of the optoelectronic component 200 in which electric current flows for the operation of the optoelectronic component 200 and / or in which electromagnetic radiation is generated and / or absorbed.

[0120] The electrically active region 206 can have a first electrode 104, an organic functional layer structure 108 and a second electrode 214.

[0121] The organic functional layer structure 206 can have one, two, or more functional layer structure units and one, two, or more intermediate layer structure(s) between the layer structure units. For example, the organic functional layer structure 108 can have a first organic functional layer structure unit 216, an intermediate layer structure 218, and a second organic functional layer structure unit 220.

[0122] The encapsulation structure 228 can include a second barrier layer 208, a coherent connecting layer 222 and a cover 224.

[0123] The design of the intermediate structure is in Fig. 2 and Fig. 3 described.

[0124] The support 102 can comprise or be formed from glass, quartz, and / or a semiconductor material. Furthermore, the support can comprise or be formed from a plastic film or a laminate containing one or more plastic films. The plastic can comprise or be formed from one or more polyolefins (for example, high-density or low-density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic can comprise or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), and / or polyethylene naphthalate (PEN).

[0125] The carrier 102 can contain or be made of a metal, for example copper, silver, gold, platinum, iron, or a metal compound, for example steel.

[0126] The carrier 102 can be opaque, translucent or even transparent.

[0127] The support 102 can be part of a mirror structure or form one.

[0128] The carrier 102 can have a mechanically rigid area and / or a mechanically flexible area, or be designed in such a way, for example as a film.

[0129] The carrier 102 can be designed as a waveguide for electromagnetic radiation, for example, being transparent or translucent with respect to the emitted or absorbed electromagnetic radiation of the optoelectronic component 200.

[0130] The first barrier layer 204 may consist of or be formed from any of the following materials: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof.

[0131] The first barrier layer 204 can be formed by one of the following methods: an atomic layer deposition (ALD) process, for example a plasma-enhanced atomic layer deposition (PEALD) or a plasma-less atomic layer deposition (PLALD); a chemical vapor deposition (CVD) process, for example a plasma-enhanced chemical vapor deposition (PECVD) or a plasma-less chemical vapor deposition (PLCVD); or alternatively by other suitable deposition methods.

[0132] In a first barrier layer 204, which has several sublayers, all sublayers can be formed using an atomic layer deposition (ALD) process. A layer sequence consisting only of ALD layers can also be referred to as a "nanolaminate".

[0133] In the case of a first barrier layer 204 which has several sublayers, one or more sublayers of the first barrier layer 204 can be deposited by means of a deposition process other than an atomic layer deposition process, for example by means of a gas phase deposition process.

[0134] The first barrier layer 204 can have a layer thickness of approximately 0.1 nm (one atomic layer) to approximately 1000 nm, for example a layer thickness of approximately 10 nm to approximately 100 nm according to one embodiment, for example approximately 40 nm according to one embodiment.

[0135] The first barrier layer 204 can have one or more high-refractive-index materials, for example one or more material(s) with a high refractive index, for example with a refractive index of at least 2.

[0136] Furthermore, it should be noted that in various embodiments a first barrier layer 204 can be completely dispensed with, for example in the case that the carrier 102 is hermetically sealed, for example if it is made of or consists of glass, metal, metal oxide.

[0137] The first electrode 204 can be configured as an anode or as a cathode.

[0138] The first electrode 104 can comprise or be formed from one of the following electrically conductive materials: a metal; a transparent conductive oxide (TCO); a network of metallic nanowires and particles, for example, of Ag, combined with conductive polymers; a network of carbon nanotubes, combined with conductive polymers; graphene particles and layers; a network of semiconducting nanowires; an electrically conductive polymer; a transition metal oxide; and / or their composites. The first electrode 104 made of or comprising a metal can comprise or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm, or Li, as well as compounds, combinations, or alloys of these materials.The first electrode 104 can be a transparent conductive oxide made of one of the following materials: for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds are also included, such as AlZnO, Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O. 12 or mixtures of different transparent conductive oxides belong to the group of TCOs and can be used in various embodiments. Furthermore, TCOs do not necessarily have a stoichiometric composition and can also be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

[0139] The first electrode 104 can have a layer or a stack of layers of several layers of the same or different materials. The first electrode 104 can be formed from a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

[0140] The first electrode 204 can, for example, have a layer thickness in a range of 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

[0141] The first electrode 104 can have a first electrical connection to which a first electrical potential can be applied. The first electrical potential can be provided by an energy source, for example, a current source or a voltage source. Alternatively, the first electrical potential can be applied to an electrically conductive support 102, and the first electrode 104 can be indirectly supplied with electrical power through the support 102. The first electrical potential can be, for example, the ground potential or another predefined reference potential.

[0142] In Fig. Figure 1 shows an optoelectronic device 200 with a first organic functional layer structure unit 216 and a second organic functional layer structure unit 220. In various embodiments, the organic functional layer structure 108 can also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70.

[0143] The first organic functional layer structure unit 216 and the optionally further organic functional layer structures can be identical or different, for example, having the same or different emitter materials. The second organic functional layer structure unit 220, or the further organic functional layer structure units, can be configured like one of the embodiments of the first organic functional layer structure unit 216 described below.

[0144] The first organic functional layer structure unit 216 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and an electron injection layer.

[0145] In an organic functional layer structure unit 108, one or more of the aforementioned layers can be provided, whereby identical layers can have physical contact, can be connected only electrically to each other, or can even be electrically isolated from each other, for example, by being arranged side by side. Individual layers of the aforementioned layers can be optional.

[0146] A hole injection layer can be formed on or above the first electrode 104. The hole injection layer can consist of or be formed from one or more of the following materials: HAT-CN, Cu(I)pFBz, MoO x , WHERE x VO x , ReO x, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc; NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenylfluorene); Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-ylamino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-ylamino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluorine; N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine;2,7-Bis[N,N-bis(9,9-spirobifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-Bis(N,N-diphenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-ditolyl)amino-spirobifluorene; and / or N,N,N',N'-tetra-naphthalene-2-yl-benzidine.;

[0147] The hole injection layer can have a thickness in a range of approximately 10 nm to approximately 1000 nm, for example in a range of approximately 30 nm to approximately 300 nm, for example in a range of approximately 50 nm to approximately 200 nm.

[0148] A hole transport layer may be formed on or above the hole injection layer. The hole transport layer may consist of or be composed of one or more of the following materials: NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene). DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenylfluorene); Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-ylamino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-ylamino)phenyl]-9H-fluorene;9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluoro; N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine; 2,7-Bis[N,N-bis(9,9-spirobifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-Bis(N,N-diphenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-di-tolyl)amino-spirobifluorene; and N,N,N',N'-tetra-naphthalen-2-yl-benzidine, a tertiary amine, a carbazole derivative, a conducting polyaniline and / or polyethylenedioxythiophene.;

[0149] The hole transport layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0150] An emitter layer can be formed on or above the hole transport layer. Each of the organic functional layer structure units 216, 220 can have one or more emitter layers, for example with fluorescent and / or phosphorescent emitters.

[0151] An emitter layer can consist of or be formed from organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules, or a combination of these materials.

[0152] The optoelectronic device 200 can have one or more of the following materials in an emitter layer, or be formed from them: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene, and polyphenylene (for example, 2- or 2,5-substituted poly-p-phenylenevinylene), as well as metal complexes, for example, iridium complexes such as blue phosphorescent FIrPic (Bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)-iridium III), green phosphorescent Ir(ppy)3 (Tris(2-phenylpyridine)iridium III), red phosphorescent Ru (dtb-bpy) 3*2 (PF6) (Tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex), and blue fluorescent DPAVBi (4,4-Bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-Bis[N,N-di-(p-tolyl)-amino]anthracene) and red fluorescent DCM2 (4-Dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters.

[0153] Such non-polymer emitters can be separated, for example, by thermal evaporation. Furthermore, polymer emitters can be used, which can be separated, for example, by a wet chemical process such as spin coating.

[0154] The emitter materials can be appropriately embedded in a matrix material, for example a technical ceramic or a polymer, such as an epoxy; or a silicone.

[0155] In various embodiments, the emitter layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0156] The emitter layer can consist of monochromatic or multicolored emitter materials (for example, blue and yellow or blue, green, and red). Alternatively, the emitter layer can have several sublayers that emit light of different colors. By mixing the different colors, the emission of light with a white color impression can result. Alternatively, a converter material can be placed in the beam path of the primary emission generated by these layers. This converter material at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that a white color impression results from the combination of primary and secondary radiation (which is not yet white).

[0157] The organic functional layer structure unit 216 can have one or more emitter layers designed as hole transport layers.

[0158] Furthermore, the organic functional layer structure unit 216 can have one or more emitter layers which are designed as electron transport layers.

[0159] An electron transport layer may be formed on or above the emitter layer, for example by being deposited.

[0160] The electron transport layer may contain or be composed of one or more of the following materials: NET-18; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene; 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; phenyldipyrenylphosphine oxide; naphthalene tetracarboxylic dianhydride or its imides; perylene tetracarboxylic dianhydride or its imides; and substances based on silols with a silacyclopentadiene unit.

[0161] The electron transport layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0162] An electron injection layer may be formed on or above the electron transport layer. The electron injection layer may consist of or be formed from one or more of the following materials: NDN-26, MgAg, Cs2CO3, Cs3PO4, Na, Ca, K, Mg, Cs, Li, LiF; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene;1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; Phenyldipyrenylphosphine oxide; Naphthalene tetracarboxylic dianhydride or its imides; Perylene tetracarboxylic dianhydride or its imides; and substances based on silols with a silacyclopentadiene unit.

[0163] The electron injection layer can have a thickness in a range of approximately 5 nm to approximately 200 nm, for example in a range of approximately 20 nm to approximately 50 nm, for example approximately 30 nm.

[0164] In an organic functional layer structure 108 with two or more organic functional layer structure units 216, 220, the second organic functional layer structure unit 220 can be formed above or next to the first functional layer structure unit 216. An intermediate layer structure 218 can be formed electrically between the organic functional layer structure units 216, 220.

[0165] In various embodiments, the intermediate layer structure 218 can be configured as an intermediate electrode 218, for example according to one embodiment of the first electrode 104. An intermediate electrode 218 can be electrically connected to an external voltage source. The external voltage source can, for example, provide a third electrical potential at the intermediate electrode 218. However, the intermediate electrode 218 can also have no external electrical connection, for example, by having a floating electrical potential.

[0166] In various embodiments, the intermediate layer structure 218 can be configured as a charge generation layer (CGL). A charge generation layer structure 218 can comprise one or more electron-conducting charge generation layers and one or more hole-conducting charge generation layers. The electron-conducting charge generation layer(s) and the hole-conducting charge generation layer(s) can each be formed from an intrinsically conductive material or a dopant in a matrix.The charge carrier pair generation layer structure 218 should be configured with respect to the energy levels of the electron-conducting charge carrier pair generation layer(s) and the hole-conducting charge carrier pair generation layer(s) such that separation of electrons and holes can occur at the interface between an electron-conducting charge carrier pair generation layer and a hole-conducting charge carrier pair generation layer. The charge carrier pair generation layer structure 218 can also include a diffusion barrier between adjacent layers.

[0167] Each organic functional layer structure unit 216, 220 can, for example, have a layer thickness of a maximum of approximately 3 µm, for example, a layer thickness of a maximum of approximately 1 µm, for example, a layer thickness of a maximum of approximately 300 nm.

[0168] The optoelectronic device 200 can optionally include further organic functional layers, for example arranged on or above one or more emitter layers or on or above the electron transport layer(s). These additional organic functional layers can be, for example, internal or external coupling / uncoupling structures that further improve the functionality and thus the efficiency of the optoelectronic device 200.

[0169] The second electrode 214 can be formed on or above the organic functional layer structure 108 or, if applicable, on or above one or more further organic functional layer structures and / or organic functional layers.

[0170] The second electrode 214 can be configured according to one of the embodiments of the first electrode 104, whereby the first electrode 104 and the second electrode 214 can be identical or different. The second electrode 214 can be configured as an anode, i.e., as a hole-injecting electrode, or as a cathode, i.e., as an electron-injecting electrode.

[0171] The second electrode 214 can have a second electrical terminal to which a second electrical potential can be applied. The second electrical potential can be provided by the same or a different energy source as the first electrical potential and / or the optional third electrical potential. The second electrical potential can be different from the first electrical potential and / or the optional third electrical potential. For example, the second electrical potential can have a value such that the difference from the first electrical potential is in the range of approximately 1.5 V to approximately 20 V, for example, a value in the range of approximately 2.5 V to approximately 15 V, for example, a value in the range of approximately 3 V to approximately 12 V.

[0172] The second barrier layer 208 can be formed on the second electrode 214.

[0173] The second barrier layer 208 can also be referred to as thin-film encapsulation (TFE). The second barrier layer 208 can be configured according to one of the embodiments of the first barrier layer 204.

[0174] Furthermore, it should be noted that in various embodiments a second barrier layer 208 can be omitted entirely. In such a configuration, the optoelectronic component 200 can, for example, have a further encapsulation structure, which makes a second barrier layer 208 optional, for example a cover 224, a cavity glass encapsulation, or a metallic encapsulation.

[0175] Furthermore, in various embodiments, one or more input / output coupling layers can be additionally formed in the optoelectronic device 200, for example, an external output coupling film on or above the support 102 (not shown) or an internal output coupling layer (not shown) in the cross-section of the optoelectronic device 200. The input / output coupling layer can have a matrix and scattering centers distributed therein, wherein the mean refractive index of the input / output coupling layer is greater than the mean refractive index of the layer from which the electromagnetic radiation is provided. Furthermore, in various embodiments, one or more anti-reflective layers (for example, combined with the second barrier layer 208) can also be provided in the optoelectronic device 200.

[0176] In various embodiments, a bonding layer 222, for example made of an adhesive or a varnish, can be provided on or above the second barrier layer 208. A cover 224 can be bonded to the second barrier layer 208 by means of the bonding layer 222, for example by gluing it on.

[0177] A coherent compound layer 222 made of a transparent material can, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles. This allows the coherent compound layer 222 to act as a scattering layer and lead to an improvement in chromatic aberration and output coupling efficiency.

[0178] Light-scattering particles can be dielectric scattering particles, for example made of a metal oxide, such as silicon dioxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga2O). x Aluminum oxide or titanium oxide. Other particles may also be suitable, provided they have a refractive index different from the effective refractive index of the matrix of the interlocking compound layer 222, for example, air bubbles, acrylate, or hollow glass spheres. Furthermore, metallic nanoparticles, such as gold, silver, iron nanoparticles, or the like, may be used as light-scattering particles.

[0179] The bonding layer 222 can have a layer thickness greater than 1 µm, for example, a layer thickness of several µm. In various embodiments, the bonding layer 222 can comprise or be a lamination adhesive.

[0180] The bonding layer 222 can be configured to have an adhesive with a refractive index lower than that of the cover 224. Such an adhesive can be, for example, a low-refractive-index adhesive such as an acrylate with a refractive index of approximately 1.3. Alternatively, the adhesive can be a high-refractive-index adhesive, for example, one containing high-refractive-index, non-scattering particles and having a layer-thickness-averaged refractive index approximately equal to the mean refractive index of the organic functional layer structure 108, for example, in the range of approximately 1.7 to approximately 2.0. Furthermore, several different adhesives can be provided, forming an adhesive layer sequence.

[0181] In various embodiments, an electrically insulating layer (not shown) can be applied or may already be present between the second electrode 214 and the conclusive connecting layer 222, for example SiN, for example with a layer thickness in a range of approximately 300 nm to approximately 1.5 µm, for example with a layer thickness in a range of approximately 500 nm to approximately 1 µm, in order to protect electrically unstable materials, for example during a wet chemical process.

[0182] In various embodiments, a coherent bonding layer 222 may be optional, for example if the cover 224 is formed directly on the second barrier layer 208, for example a cover 224 made of glass, which is formed by plasma spraying.

[0183] Furthermore, a so-called getter layer or getter structure, for example a laterally structured getter layer, can be arranged on or above the electrically active area 206 (not shown).

[0184] The getter layer can be made of, or composed of, a material that absorbs and binds substances harmful to the electrically active region 206. For example, a getter layer can be made of, or composed of, a zeolite derivative. The getter layer can be translucent, transparent, or opaque and / or impermeable to the electromagnetic radiation emitted and / or absorbed in the optically active region. The getter layer can have a thickness greater than approximately 1 µm, for example, a thickness of several µm.

[0185] In various embodiments, the getter layer can have a lamination adhesive or be embedded in the bonding layer 222.

[0186] A cover 224 can be formed on or above the bonded layer 222. The cover 224 can be bonded to the electrically active area 206 via the bonded layer 222 and protect it from harmful substances. The cover 224 can be, for example, a glass cover 224, a metal foil cover 224, or a sealed plastic film cover 224. The glass cover 224 can be bonded to the second barrier layer 208 or the electrically active area 206, for example, by means of a glass frit bond (glass soldering / seal glass bonding) using a conventional glass solder in the geometric edge regions of the organic optoelectronic device 200.

[0187] The cover 224 and / or the interlocking bonding layer 222 can have a refractive index (for example at a wavelength of 633 nm) of 1.55.

[0188] In various embodiments, a method 300 for manufacturing an optoelectronic component is provided (illustrated in Fig. 3) The optoelectronic component can be designed as an organic optoelectronic component. The optoelectronic component can be designed as a planar component. The optoelectronic component can be designed as a light-emitting diode, solar cell, and / or photodetector.

[0189] Method 300 comprises the formation 302 of a structured electrode. The formation 302 of the structured electrode can comprise a maskless lithographic process, for example, laser writing or laser ablation; a photolithographic process; an embossing lithographic process; and / or a nanoembossing lithographic process. The electrode can be structured such that the electromagnetic radiation reflected by the electrode is diffusely reflected.

[0190] Furthermore, the method 300 features the formation 304 of an organic functional layer structure on or above the structured electrode. The organic functional layer structure is configured to emit electromagnetic radiation or to convert electromagnetic radiation into an electric current, for example according to one of the embodiments described above.

[0191] The structured electrode is designed with a surface that reflects electromagnetic radiation. The organic functional layer structure is formed on or above the reflective surface of the structured electrode and electrically coupled to it.

[0192] In one embodiment of method 300, the formation of the structured electrode can comprise forming the electrode on the support and structuring the electrode (illustrated in Fig. 4 to Fig. 6).

[0193] An electrode 104 is formed on or above the support 102 (illustrated in Fig. 4A). The electrode may be made of or formed from a metal, for example according to one of the embodiments described in the Fig. 2, for example as a silver layer or an ITO layer.

[0194] In various configurations, the structuring of the electrode can involve a maskless lithographic process, for example laser writing or laser ablation.

[0195] In various configurations, the structuring of the electrode can involve a photolithographic process, an embossing lithographic process, and / or a nanoembossing lithographic process. The structuring of the electrode can involve the formation of a mask structure on or above the electrode.

[0196] In various embodiments, the formation of the mask structure can involve an arrangement of particles 402 on the electrode 104, for example in a monolayer (illustrated in Fig. 4B).

[0197] The particles 402 can be configured such that they consist of or are formed from a different substance than the electrode 104. The particles 402 can be configured such that they exhibit a different etch rate than the substance or mixture of substances of the electrode 104 with respect to an etching medium, for example, a lower etch rate. The particles can be configured such that they exhibit a higher reflectivity and / or a greater difference in refractive index with respect to the organic functional layer structure than the electrode 104.

[0198] The particles 402 can be magnetizable and the formation of the mask structure involves arranging the magnetizable particles 402 on the electrode 102 in a magnetic field.

[0199] The particles 402 can be electrically polarizable and the formation of the mask structure involves arranging the polarizable particles 402 on the electrode 102 in an electric field.

[0200] The particles 402 can have a mean diameter in the range of approximately 0.05 µm to approximately 100 µm. The particles 402 can contain or be formed from any of the following substances: for example, as a homopolymer or copolymer: a polystyrene, a polymethacrylate, a poly(N-isopropylacrylamide), a dextran, a polylactic acid, a silicate, a polyglucosamine, a polyethyleneimine; gold, silver, platinum, copper, iron, iron oxide, magnesium, aluminum.

[0201] The particles 402 may contain or be formed from a phosphor or electrically conductive material, for example a dopant or phosphor of the organic functional layer structure according to one of the embodiments described above.

[0202] The particles 402 can be configured to have a core and a shell, the core being of a different material or copolymer than the shell. For example, the particles can have a magnetizable and / or electrically polarizable core.

[0203] The particles may be designed to enhance adhesion with respect to the organic functional layer structure to the reflective surface, for example exhibiting a lower surface tension or adhesion work than the reflective surface of the electrode 104 and / or the layer of the organic functional layer structure that is in physical contact with the electrode or would be in physical contact without particle 402.

[0204] The electrode 104 and the organic functional layer structure formed on or above the electrode 104 can be configured to have different moduli of elasticity. The mask structure on or above the electrode 104 can be configured such that the particles are mechanically and / or thermally relaxing with respect to the different moduli of elasticity of the reflective surface of the electrode 104, the layer of the organic functional layer structure arranged on the reflective surface, and / or the organic functional layer structure itself.

[0205] In one embodiment, the particles 402 can be applied to the electrode 104 in a periodic arrangement. The particles 402 can be arranged in a structured manner during application to the electrode 102.

[0206] In one embodiment, the particles 402 can be applied to the electrode 104 in a random arrangement. Alternatively, the particles 402 can be arranged in a structured manner after being applied to the electrode 102.

[0207] After arranging the particles 402 on the electrode 102, the mean diameter and / or the mean distance between the particles 402 can be changed, for example, the distance can be increased and / or the mean diameter can be decreased (illustrated in Fig. 4C with modified particles with reference numeral 404). Changing the mean diameter of the particles 402 can be achieved, for example, by changing the temperature, the pH value (for the configuration in which the particles are surrounded by a solution); the field strength and / or direction of an applied electric and / or magnetic field, for example, by increasing the temperature. The temperature change can involve an increase in temperature in a range from approximately 10 °C to approximately 400 °C.

[0208] Changing the mean diameter of the particles 402 can, for example, involve swelling, shrinking, inflating, or removing, for example, dissolving or etching a part from the particles 402; or growing or depositing a part onto the particles 402.

[0209] In one embodiment, the particles 402 can be processed in such a way that the particles 402 change their shape on the surface of the electrode, for example, by melting and spreading (illustrated in Fig. 4D).

[0210] At least locally, spaces 408 are formed between particles 404 and 406, in which the electrode 104 is exposed. Through these spaces 408, holes 506 can be formed in the electrode between particles 404 and 406 using an etching medium, for example as blind holes or trench structures (illustrated in Fig. 5 and Fig. 6).

[0211] The etching medium can be a solvent of the electrode material, a plasma, or ballistic bombardment of the electrode.

[0212] A ballistic bombardment of the exposed electrode 104 in the spaces 408 can, for example, be a bombardment with particles, molecules, atoms, ions, electrons and / or photons.

[0213] Photon bombardment can be implemented, for example, as laser ablation with a wavelength in the range of approximately 200 nm to approximately 1700 nm, for example focused, for example with a focus diameter in the range of approximately 10 µm to approximately 2000 µm, for example pulsed, for example with a pulse duration in the range of approximately 100 fs to approximately 0.5 ms, for example with a power of approximately 50 mW to approximately 1000 mW, for example with a power density of approximately 100 kW / cm² 2 up to approximately 10 GW / cm² 2 and, for example, be trained with a repetition rate in a range of approximately 100 Hz to approximately 1000 Hz.

[0214] The holes 504 can be formed with a depth greater than approximately 1 / 10 of the wavelength of the reflected electromagnetic radiation, for example, with a depth of more than half the wavelength of the reflected electromagnetic radiation. For semi-transparent optoelectronic devices, the holes 504 can have a depth less than 10% of the reflected electromagnetic radiation. The holes 504 can thus lead to a visible or measurable change in the reflectivity of the structured electrode. The holes 504 can be formed with a depth greater or less than the coherence length of the coherent component of the reflected electromagnetic radiation.

[0215] The electrode 104 can be structured in such a way that the roughness of the reflective surface of the electrode 104 is increased, for example with respect to the interface of the electrode 104 with the support 102.

[0216] The structuring 106 and the reflective surface 114 of the electrode 104 can be made of the same material or be formed from it (illustrated in Fig. 5 and Fig. 6).

[0217] In various embodiments, the structuring 106 can be designed as an arrangement of holes 504 in the electrode 104 (illustrated in Fig. 5 and Fig. 6 in the embodiments with reference numeral 520 or 620 as structuring with reference numeral 106B). For example, the mask structure 506, for example the particles 404, 406; can be removed from the surface of the electrode 104 after the formation of the holes 504 in the electrode 104 or by means of forming the holes 504 in the electrode 104. This allows the surface of the structured electrode to be essentially mask-free when the organic functional layer structure is formed on the electrode 104. The structured area of ​​the electrode 104 and the reflective surface have the same material or are formed from it.

[0218] In various embodiments, the structure can have 106 holes (illustrated in Fig. 5 and Fig. 6 in the embodiments with reference numerals 510 and 610, respectively, as a structuring with reference numeral 106A). For example, the mask structure 506, for instance the particles 404, 406, can remain on the surface of the electrode 104 after the formation of the holes 504 in the electrode 104. The structuring 106A of the electrode 104 can have a portion of the mask structure 506 such that the mask structure 506 forms part of the reflective surface. The structured electrode 104 can have holes 504 in the electrode, i.e., in the electrode layer, wherein the mask structure 506, for example the particles 404 / 406, is formed and remains between the holes 504 on the electrode 104. The organic functional layer structure can be formed on the structured electrode and the particles, with the particles and the structured electrode forming the reflective surface.

[0219] The holes 504 can be configured as holes and / or trenches in the electrode 104, for example as blind holes. The holes 504 can be isotropic (illustrated in Fig. 5) or anisotropic (illustrated in Fig. 6) be developed, for example with regard to their depth and / or shape.

[0220] Isotropically formed holes 504 can be formed, for example, by means of a wet chemical etching process, such as wet chemical etching of silver.

[0221] Anisotropically formed holes 504 can be formed, for example, by means of a dry chemical etching process, such as dry chemical etching of silver.

[0222] The holes 504 can have a depth greater than 1 / 10, for example greater than half, of the wavelength of the reflected electromagnetic radiation 112. In various embodiments, the holes 504 can have a depth greater or less than the coherence length of the coherent component of the reflected electromagnetic radiation 112.

[0223] The structuring 106A,B can be designed in such a way that the roughness of the reflective surface 114 of the electrode 104 is increased, for example with respect to the interface of the electrode 104 with the support 102.

[0224] After the formation of the organic functional layer structure on the electrode, the mask structure 506 can exhibit a functional effect. For example, the mask structure 506 can contain or be formed as a phosphor with respect to the reflected or transmitted electromagnetic radiation. For example, the mask structure 506 can have an adhesion-enhancing effect between the organic functional layer structure and the reflective surface of the electrode 104 without the mask structure 506. For example, the electrode and the organic functional layer structure can be configured such that they exhibit different moduli of elasticity.The mask structure 506 can then be designed to be mechanically and / or thermally relaxing with respect to the different elastic moduli of the electrode 104 or, in the case of a multilayer electrode, the upper layers that form the reflective surface; the layer of the organic functional layer structure arranged on the reflective surface of the electrode 104 and / or the organic functional layer structure.

[0225] In one embodiment, the structured electrode can be formed from a single layer.

[0226] During the formation of the holes 504, the particles 404 / 406 can be under-etched (in Fig. Figure 5 illustrates this using reference numeral 502). This also structures the non-exposed area of ​​electrode 104 – below particles 404 / 406. This allows the scattering effect of the structuring 106 to be enhanced.

[0227] In various embodiments, the electrode 104 has a macrostructured region 708 and a matrix region 702, wherein the macrostructured region 708 is surrounded by the matrix region 702 in the reflective surface 114 of the electrode 104 (illustrated in Fig. 7) The macrostructured area 708 may have a different structure (106) than the matrix area 702. The macrostructured area 708 may be designed to represent information, for example in the form of a word mark, a pictogram, an ideogram and / or a symbol.

[0228] In various embodiments, at least one first type of particle 706 and one second type of particle 710 can be arranged on the electrode 104. The first type of particle 706 can be arranged in a different area on the electrode than the second type of particle 710. For example, the first type of particle 706 can be arranged in the matrix area 702 and the second type of particle 710 in the macrostructured area 708 (illustrated in Fig. 7) The first type of particle 706 may have a different composition than the second type of particle 710. The first type of particle 706 may have a different mean diameter than the second type of particle 710.

[0229] In one embodiment, the macrostructured area 710 and the matrix area 702 can contain the same type of particles and / or the same arrangement of particles. To create the information representation, the mean diameter of the particles in the macrostructured area 710 can be modified differently than in the matrix area 702, for example, by applying a different temperature and / or a different temperature exposure time to the particles in the macrostructured area 710 than in the matrix area 702.

[0230] In other words, at least one different type of particle can be arranged in the macrostructured area 708 on the electrode 104, the particles can be arranged differently, and / or the particles can be processed differently than in the matrix area 702. Further particle configurations are described in the Fig. 4 illustrates.

[0231] In various embodiments, the carrier 102 can have a structured surface (illustrated in Fig. 8A). The structuring 106 of the surface of the electrode 102 can be or become conformal to the structured surface of the support 102 (illustrated in Fig. 8B). In other words, the formation of the structured electrode in the process for manufacturing an optoelectronic device can exhibit conformal formation of the electrode on the structured surface of the substrate.

[0232] The structured surface of the carrier 102 can exhibit one or more features of the above-described electrode structuring configurations in various configurations and / or be formed using one or more of the above-described electrode structuring methods. Fig.Figure 9 shows an electron microscopic image of a SiC support 102 structured by the above-described method for structuring the electrode.

[0233] In one embodiment, polystyrene spheres 402 are applied to the surface of the electrode 104, for example, an anode. These can be prepared, for example, in a monolayer on a water surface and then transferred to the surface of the electrode 104 by immersing the electrode 104 in the water surface. After the water dries, the spheres 402 can adhere to the surface of the electrode 104. By means of a heat treatment step or a plasma step, the diameter of the spheres 402 can be reduced (404) or they can be formed as a meniscus 406 on the surface of the electrode 104. These structures can then act as a mask structure for subsequent etching processes, for example, dry etching or wet etching. The spheres 402 can then be removed before the application of subsequent layers, for example, before the application of the organic functional layer structure.By structuring the electrode 106 through the etching step, a scattering effect is achieved. This allows the reflection angle of the reflected electromagnetic radiation to change, depending on the point of incidence of the incident electromagnetic radiation, compared to an unstructured electrode. This can increase the amount of absorbed electromagnetic radiation in photodetectors or solar cells.

[0234] In organic light-emitting diodes (OLEDs), the amount of emitted electromagnetic radiation can be increased by structuring the electrode or substrate, for example in a bottom-emitter OLED with a structured transparent or translucent electrode - for example made of ITO; in a top-emitter OLED with a structured reflective electrode - for example made of silver and / or in a bidirectionally emitting OLED - which is recognizable by a milky appearance.

[0235] Various embodiments of an optoelectronic component and a method for manufacturing an optoelectronic component are provided, enabling increased light coupling and / or light extraction for optoelectronic components, such as organic light-emitting diodes (OLEDs). Furthermore, this allows the extraction to be implemented prior to the formation of the organic functional layer structure, thus earlier in the value chain. If the extraction proves ineffective, it can be discarded with less upfront financial investment.

Claims

[1] Method (300) for manufacturing an optoelectronic device comprising method (300): • Providing a support (102) wherein the support (102) has a flat, unstructured surface, • Forming (302) an electrode (104) on or above the support (102), wherein - the electrode (104) is formed as a closed electrode layer with a flat, unstructured interface on the side of the support (102), • Structuring the electrode by forming a mask structure (506) on or above the electrode and etching the masked surface of the electrode (104), wherein the formation of the mask structure (506) comprises an arrangement of particles (402, 706, 710) on the electrode (104), • Forming (304) an organic functional layer structure (108) to emit electromagnetic radiation or convert electromagnetic radiation into an electric current; - wherein the structured electrode (104) is formed with a surface (114) that reflects electromagnetic radiation, and - wherein the organic functional layer structure (108) is formed on or above the reflective surface (114) of the structured electrode (104) and is electrically coupled to it. [2] Method (300) according to claim 1, wherein at least one first type of particle (706) and one second type of particle (710) are arranged on the electrode (104). [3] Method (300) according to claim 1, wherein the particles (402, 706, 710) are arranged in a monolayer on the electrode (104). [4] Method (300) according to claims 1 to 3, wherein the particles (402, 706, 710) are arranged in a macrostructured region (708) and a matrix region (702), wherein a mean diameter and / or a mean distance of the particles (402, 706, 710) in the macrostructured area (708) is changed in a different way than in the matrix area (702), preferably by means of a different temperature and / or a different exposure time of the temperature to the particles (402, 706, 710) in the macrostructured area (708).

Images