Optoelectronic components and methods for their manufacture

Abstract

Optoelectronic component (1) comprising - a layer sequence (2) with an active layer which is configured to emit primary electromagnetic radiation during operation of the device, - an encapsulation element (3) which is arranged in the beam path of the primary electromagnetic radiation and above the layer sequence (2) and which comprises a matrix material and zeolite particles, wherein the encapsulation element (3) comprises converter particles and the converter particles are configured to convert at least partially the primary electromagnetic radiation into secondary electromagnetic radiation during operation of the device and the zeolite particles are bound to the converter particles via chemical bonds.

Description

[0001] Optoelectronic components and a method for their manufacture are described.

[0002] Optoelectronic components are often exposed to environmental influences such as humidity, pollutants, and oxygen. Frequently, the barrier effect of the materials used to encapsulate individual components is insufficient to prevent these environmental influences from penetrating the component over its service life, which can lead to premature component failure. In particular, the LED semiconductor chip, converter materials, and leadframe must be protected from such environmental influences. Especially with high-power LEDs (i.e., LEDs with an electrical power of one watt or more), conventional encapsulation materials such as silicones result in a very short lifespan. This is because the encapsulation materials must exhibit low permeability to environmental influences while also being resistant to the radiation emitted by the LED.

[0003] German patent application DE 10 2009 039 245 A1 relates to a radiation-emitting device with a potting material. German patent application DE 10 2012 107 547 A1 relates to a housing for a light-emitting device. German patent application DE 10 2013 106 855 A1 relates to a method for manufacturing an optoelectronic component and an optoelectronic component. German patent application DE 10 2013 200 907 A1 relates to a method for manufacturing a transparent polyurethane body containing one or more electronic components. German patent application DE 695 01 702 T2 relates to a getter material for use in a sealed housing. Publication US 2011 / 0 293 895 A1 describes a composite material for protecting water-sensitive devices based on surface-functionalized nanozeolites dispersed in a polymer matrix.

[0004] The object of at least one embodiment of the present invention is therefore to provide an optoelectronic component comprising an encapsulation element that has a very good barrier effect against acids, alkalis, gases, and water. The object of at least another embodiment is to provide a method for manufacturing an optoelectronic component comprising an encapsulation element with improved properties.

[0005] These problems are solved by an optoelectronic component having the features of claims 1 and 12 and by a method for manufacturing the optoelectronic component having the features of claim 10.

[0006] Advantageous embodiments and further developments of the present invention are specified in the respective dependent claims.

[0007] An optoelectronic device is described. The optoelectronic device comprises a sequence of layers with an active layer configured to emit primary electromagnetic radiation during operation. The optoelectronic device further comprises an encapsulation element located in the path of the primary electromagnetic radiation and above the sequence of layers. The encapsulation element comprises a matrix material and zeolite particles.

[0008] The fact that a layer or element is arranged or applied "on" or "over" another layer or element can mean, here and in the following, that the layer or element is in direct mechanical and / or electrical contact with the other layer or element. It can also mean that the layer or element is arranged indirectly on or over the other layer or element. In this case, further layers and / or elements, or a gap, may be arranged between the layer or element.

[0009] In this context, "layer sequence" refers to a sequence of layers comprising more than one layer, for example a sequence that includes at least one p-doped and one n-doped semiconductor layer, with the layers arranged on top of each other.

[0010] The layer sequence can be implemented as an epitaxial layer sequence or as a radiation-emitting semiconductor chip with an epitaxial layer sequence, i.e., as an epitaxially grown semiconductor layer sequence. The layer sequence can, for example, be based on InGaAlN. InGaAlN-based semiconductor chips and semiconductor layer sequences are, in particular, those in which the epitaxially produced semiconductor layer sequence comprises a layer sequence of different individual layers, including at least one individual layer containing a material from the III-V compound semiconductor material system InGaAlN. x Al y Ga 1-x-yN with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1. Semiconductor layer sequences that have at least one active layer based on InGaAlN can, for example, emit electromagnetic radiation in an ultraviolet to green wavelength range.

[0011] Alternatively or additionally, the semiconductor layer sequence or the semiconductor chip can also be based on InGaAlP, meaning that the semiconductor layer sequence can have different individual layers, at least one of which is a material from the III-V compound semiconductor material system In x Al y Ga 1-x-y P with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1. Semiconductor layer sequences or semiconductor chips that have at least one active layer based on InGaAlP can, for example, preferentially emit electromagnetic radiation with one or more spectral components in a green to red wavelength range.

[0012] Alternatively or additionally, the semiconductor layer sequence or semiconductor chip can also comprise other III-V compound semiconductor material systems, for example, an AlGaAs-based material, or II-VI compound semiconductor material systems. In particular, an active layer comprising an AlGaAs-based material can be suitable for emitting electromagnetic radiation with one or more spectral components in a red to infrared wavelength range.

[0013] The active semiconductor layer sequence can comprise, in addition to the active layer, further functional layers and functional regions, such as p- or n-doped charge carrier transport layers (i.e., electron or hole transport layers), undoped or p- or n-doped confinement, cladding, or waveguide layers, barrier layers, planarization layers, buffer layers, protective layers, and / or electrodes, as well as combinations thereof. Furthermore, one or more mirror layers may be deposited on the side of the semiconductor layer sequence facing away from the growth substrate. The structures described here, relating to the active layer or the further functional layers and regions, are known to those skilled in the art, particularly with regard to their structure, function, and composition, and are therefore not explained in more detail here.

[0014] In one embodiment, the optoelectronic component has a housing. The housing may have a recess in which the layer sequence is arranged.

[0015] The casing can be made of thermoplastics such as polyphthalamides or unsaturated polyesters, or thermosets. Combinations of these materials are also possible.

[0016] The layer sequence can also be arranged on a substrate. The substrate material can be selected from a group that includes AlN ceramics, Si3N4 ceramics, flexible films, or combinations thereof.

[0017] In one embodiment, the layer sequence and the encapsulation element are in direct contact with each other.

[0018] “Direct contact” here and in the following means that two elements or layers are in direct mechanical and / or electrical contact with each other.

[0019] The zeolite particles exhibit cage-like structures that can specifically encapsulate even the smallest molecules, such as H₂O and H₂S. This gives the encapsulation element excellent barrier properties against moisture, corrosive gases, oxygen, acids, and alkalis. In other words, the encapsulation element can only be penetrated by these environmental influences to a very limited extent over the service life of the optoelectronic component. These properties provide excellent protection against environmental influences for the parts of the optoelectronic component over which the encapsulation element is positioned. Other materials, such as converter particles, that may be present within the encapsulation element are also well protected from these environmental influences.

[0020] In one embodiment, the matrix material is selected from the group comprising silicones, polyacrylates, polyurethanes, epoxy resins, inorganic-organic hybrid polymers, and combinations thereof. For example, polymethyl methacrylate can be used as the polyacrylate, and polydimethylsiloxane or polydiphenylsiloxane as the silicone. Preferably, the matrix material is selected from the group comprising silicones, polyacrylates, polyurethanes, and inorganic-organic hybrid polymers. Particularly preferred is a silicone, for example, polydimethylsiloxane or polydiphenylsiloxane. In particular, silicones exhibit increased stability against light, especially blue light, and heat to which they are exposed in an optoelectronic component; that is, silicones do not yellow or yellow only very slowly during operation of the component. However, silicones, in particular, are permeable to moisture.This means that components located under a silicone encapsulation element are particularly susceptible to corrosion and damage from environmental influences. The addition of zeolite particles to the encapsulation element gives it not only high temperature and light stability but also low permeability to moisture, harmful gases, oxygen, acids, and alkalis.

[0021] In one embodiment, the encapsulation element consists of a matrix material and zeolite particles.

[0022] In one embodiment, the quantity of zeolite particles is adjusted so that the parts of the component over which the encapsulation element is arranged are protected from environmental influences throughout the entire service life of the optoelectronic component. The penetration of moisture, harmful gases, oxygen, acids, and alkalis to these components can thus be completely or almost completely prevented.

[0023] In one embodiment, the zeolite particles are zeolite A particles. Zeolite A, also known as Linde type A, is a synthetic cubic zeolite. Zeolite A has a framework structure of AlO₄ and SiO₄ tetrahedra that form a covalent lattice with cavities. The linkage of the Al and Si tetrahedra leads to a three-dimensional spatial structure. A sodalite cage is formed within zeolite A, which is connected to other sodalite cages via square prisms. The connection of eight sodalite cages via square prisms creates a so-called α-cage in the center with a diameter of 410 pm. Small molecules, such as H₂O, H₂S, and O₂, can bind to the α-cage and the sodalite cages. A sodalite cage has the formula M x (AlO2) 12 (SiO2) 12where M is selected from a group comprising alkali and alkaline earth metal ions. M is preferably selected from a group comprising lithium, sodium, potassium, magnesium, calcium, strontium, barium ions and combinations thereof. For example, a soda ash cage of zeolite A has the formula Na 12 (AlO2) 12 (SiO2) 12 on.

[0024] In one embodiment, the zeolite particles are chemically bonded to the matrix material. Preferably, the zeolite particles are bonded to the matrix material via covalent or ionic bonds, and particularly preferably via covalent bonds. In this embodiment, the zeolite particles used are, for example, functionalized with an organic group through which they are chemically bonded to the matrix material. For example, the functional group is selected from a group comprising vinyl groups and silanes. Examples include a vinyl group, methacryloxypropyltrimethoxysilane, 3-glycidoxypropylsilane, or phenyltrimethoxysilane. Alternatively or additionally, the matrix material can be functionalized with an organic group through which it is chemically bonded to the zeolite particles.For example, the functional group is selected from a group comprising vinyl groups and silanes. Examples include a vinyl group, methacryloxypropyltrimethoxysilane, 3-glycidoxypropylsilane, or phenyltrimethoxysilane. This ensures a homogeneous distribution of the zeolite particles within the encapsulation element. In particular, the zeolite particles are not agglomerated, which would result in inhomogeneous light scattering.

[0025] In one embodiment, the zeolite particles are homogeneously distributed within the matrix material. This allows for uniform absorption of environmental influences across the entire dimensions of the encapsulation element. Since light can be scattered by the zeolite particles, their homogeneous distribution ensures uniform light scattering.

[0026] In one embodiment, the encapsulation element is designed as a potting compound or as a layer applied over the layer sequence.

[0027] For example, the layer sequence is arranged in a recess of a housing and the recess of the housing is filled with the encapsulation element, which is designed as a potting compound.

[0028] In one embodiment, the encapsulation element is designed as a layer. The layer can have a thickness of 100 nm to 1 µm, preferably 200 nm to 900 nm, and particularly preferably 200 nm to 500 nm. In one embodiment, the encapsulation element comprises converter particles. The converter particles are configured to convert at least part of the primary electromagnetic radiation into secondary electromagnetic radiation during operation of the device.

[0029] In one embodiment, the encapsulation element consists of a matrix material, zeolite particles and converter particles.

[0030] The fact that the converter particles at least partially convert the primary electromagnetic radiation into secondary electromagnetic radiation means that the primary electromagnetic radiation is at least partially absorbed by the converter particles and emitted as secondary electromagnetic radiation with a wavelength range different from that of the primary electromagnetic radiation. The primary electromagnetic radiation and / or secondary electromagnetic radiation can encompass one or more wavelengths and / or wavelength ranges in the infrared to ultraviolet wavelength range, particularly in the visible wavelength range. The spectra of the primary radiation and / or the secondary radiation can be narrowband, meaning that the primary radiation and / or the secondary radiation then exhibit a monochromatic or nearly monochromatic wavelength range.Alternatively, the spectrum of the primary radiation and / or the spectrum of the secondary radiation can also be broadband, meaning that the primary radiation and / or the secondary radiation can have a mixed-color wavelength range, whereby the mixed-color wavelength range can have a continuous spectrum or several discrete spectral components with different wavelengths.

[0031] The primary and secondary radiation can be superimposed to create a white luminous impression. The primary radiation can preferably produce a blue luminous impression, and the secondary radiation a yellow luminous impression, which can be caused by spectral components of the secondary radiation in the yellow wavelength range and / or spectral components in the green and red wavelength range.

[0032] It is also possible that the primary electromagnetic radiation is completely or almost completely converted into secondary electromagnetic radiation. In this case, the primary electromagnetic radiation is completely or almost completely absorbed by the converter material and emitted in the form of secondary electromagnetic radiation. The radiation emitted by the optoelectronic component according to this embodiment thus corresponds completely or almost completely to the secondary electromagnetic radiation. Nearly complete conversion is understood to mean a conversion of over 90%, particularly over 95%.

[0033] It is possible that the primary radiation lies in the UV range and the secondary radiation creates a blue and yellow luminous impression, which can be caused by spectral components of the secondary radiation in the blue and yellow wavelength range and / or spectral components in the blue, green, and red wavelength range. In this case, the secondary radiation can create a white luminous impression.

[0034] In one embodiment, the encapsulation element comprises converter particles of various phosphors.

[0035] In one embodiment, the encapsulation element is transparent to primary electromagnetic radiation and to secondary electromagnetic radiation.

[0036] In this context, "transparent" means that the respective object is almost completely transparent to electromagnetic radiation in the UV and infrared ranges, or a sub-spectrum thereof, across the entire visible electromagnetic spectrum. In one embodiment, the encapsulation element has a transparency of over 95%; preferably, the transparency is over 98% for primary electromagnetic radiation and / or secondary electromagnetic radiation.

[0037] In one embodiment, the converter particles are present in a proportion of 1 to 50 vol.% relative to the matrix material, preferably 10 to 40 vol.%, and particularly preferably 20 to 30 vol.%.

[0038] According to one embodiment, the converter particles are homogeneously distributed within the conversion element. This homogeneous distribution of the converter particles enables uniform conversion of the primary radiation by the converter particles, resulting in a uniform emission characteristic for both the primary and secondary radiation.

[0039] According to one embodiment of the optoelectronic component, the converter particles have a particle diameter of 5 nm to 20 µm.

[0040] In one embodiment, the zeolite particles have a size of 30 nm to 300 nm. Preferably, the zeolite particles have a size of 30 to 150 nm, and particularly preferably a size of 30 nm to 100 nm, for example 30 nm or 40 nm. With this particle size, the zeolite particles have the further advantage that they scatter light. This allows for homogeneous light mixing.

[0041] Since scattering inevitably occurs at micrometer-scale converter particles, additional scattering particles, such as silica particles, often need to be added to achieve homogeneous light mixing. However, because homogeneous light mixing can already be achieved with the addition of zeolite particles, the addition of further scattering particles is either unnecessary or only required to a minimal extent. Thus, the zeolite particles contribute both to homogeneous light mixing and to an extended device lifetime by protecting parts of the device from environmental influences.

[0042] In one embodiment, the converter particles are quantum dots. Quantum dots are nanoscale material structures, for example 5×10 1 up to 10 5 comprise atoms.

[0043] In one embodiment, the quantum dots comprise a II / IV or III / V semiconductor. For example, the quantum dots are selected from a group that includes InP, InCuS₂, CdSe, and combinations thereof. Cadmium-free quantum dots are particularly preferred. Quantum dots are narrowband conversion materials that have great potential for use in optoelectronic devices. However, quantum dots, especially cadmium-free quantum dots, are very sensitive to oxygen and moisture. Therefore, they must be processed, for example, in a glovebox and encapsulated airtight, i.e., protected from oxygen and humidity, for the entire lifetime of the optoelectronic device. The advantage of quantum dots lies in their narrowband emission, meaning that the full width at half maximum (FWHM) is small and the emission wavelength can be precisely controlled.

[0044] By arranging the quantum dots in the encapsulation element according to the invention, oxygen and water molecules are bound in the cage structures of the zeolite particles, so that the quantum dots are very well protected against these influences and the quantum dots therefore exhibit constant performance over the operating lifetime of the component.

[0045] In one embodiment, the zeolite particles are bonded to the converter particles via chemical bonds. These are preferably covalent and / or ionic bonds, and particularly preferably covalent bonds. In this embodiment, the zeolite particles or the matrix material used are, for example, functionalized with an organic group through which they are chemically bonded to the converter particles. For example, the functional group is selected from a group comprising vinyl groups and silanes. Examples include a vinyl group, methacryloxypropyltrimethoxysilane, 3-glycidoxypropylsilane, or phenyltrimethoxysilane.

[0046] It is also possible that the zeolite particles are bound to the converter particles and to the matrix material via chemical bonds, or that some of the zeolite particles are bound to the converter particles via chemical bonds and another part of the zeolite particles are bound to the matrix material via chemical bonds.

[0047] In one embodiment, the quantum dots exist as an agglomerate. This can be a single-crystal or polycrystalline agglomerate.

[0048] In one embodiment, the agglomerate has a diameter of 1 nm to 50 nm, preferably 1 nm to 20 nm, particularly preferably 1 nm to 10 nm, for example 5 nm.

[0049] In one embodiment, the agglomerate or quantum dot forms a core surrounded by a first shell. A quantum dot or agglomerate forming a core surrounded by a first shell is referred to here and in the following as an encapsulated quantum dot. The first shell may comprise or consist of an inorganic material. In particular, the core and the first shell are in direct contact with each other.

[0050] The inorganic material of the first shell may include or consist of ZnS.

[0051] The first shell can have a thickness between 1 nm and 50 nm, preferably between 1 nm and 20 nm, and particularly preferably between 1 nm and 10 nm.

[0052] In one embodiment, the inorganic material of the first shell is chemically bonded to a second shell. The second shell comprises the matrix material and the zeolite particles. Preferably, the zeolite particles and / or the matrix material are chemically bonded to the first shell. The zeolite particles and / or the matrix material and / or the inorganic material used are functionalized, for example, with one of the aforementioned organic groups, such as a vinyl group, methacryloxypropyltrimethoxysilane, 3-glycidoxypropylsilane, or phenyltrimethoxysilane.

[0053] In one embodiment, the second shell is arranged in the spaces between the encapsulated quantum dots. It is also possible for several encapsulated quantum dots to be agglomerated, with the second shell arranged in the spaces between these agglomerates.

[0054] A third layer can be arranged above the second layer. The third layer can comprise materials including metal oxides, such as ALD and Ta2O5.

[0055] The third shell can have a thickness between 50 nm and 200 nm, preferably between 50 nm and 150 nm, and particularly preferably between 50 nm and 100 nm.

[0056] According to one embodiment, the encapsulation element comprises thermally conductive materials. The thermally conductive materials are selected from a group that includes Al2O3, AlN, SiO2 and combinations thereof.

[0057] The use of thermally conductive materials prevents heat buildup within the encapsulation element, thus guaranteeing constant luminance and color point throughout the optoelectronic component's service life. This prevents premature failure of the optoelectronic component and extends its lifespan.

[0058] In one embodiment, a first bond pad is arranged above the layer sequence. The layer sequence and the first bond pad can be in direct contact with each other. The layer sequence and the first bond pad can be in electrical contact with each other. The first bond pad serves to electrically contact the layer sequence. For example, the layer of the layer sequence that is in direct electrical contact with the bond pad can be an n-doped semiconductor layer. The first bond pad then serves to n-contact the layer sequence. In one embodiment, the first bond pad comprises materials selected from a group that includes Ag, Al, Tl, Pt, or combinations thereof. Preferably, the first bond pad comprises Ag.

[0059] In one embodiment, there is direct contact between the first bond pad and the encapsulation element. This means that, in this embodiment, the first bond pad is in direct contact with the layer sequence and the encapsulation element, such that all main and side surfaces of the first bond pad are surrounded by either the layer sequence or the encapsulation element. This effectively protects the first bond pad from moisture and oxygen, especially when the first bond pad is made of corrosion-prone materials such as silver.

[0060] According to a further embodiment, a second bond pad is arranged above the carrier or in the recess of the housing, wherein the carrier or housing and the second bond pad can have at least partial direct contact with each other. The second bond pad can be made of the same materials as the first bond pad. In one embodiment, the second bond pad is in direct contact with the encapsulation element. In another embodiment, the second bond pad has direct contact with both the encapsulation element and the carrier or housing. This allows the second bond pad to be very well protected from moisture and oxygen.

[0061] In one embodiment, the first and second bond pads are electrically connected to each other by a bond wire.

[0062] The optoelectronic component can be a luminescent diode, a photodiode-transistor array / module, and an optical coupler.

[0063] The specified embodiments of the optoelectronic component can be manufactured according to the methods described below.

[0064] A method for manufacturing an optoelectronic component is described. The method comprises the following steps: A) Providing a housing that has a recess, or a support, B) Arranging a sequence of layers with an active layer designed to emit primary electromagnetic radiation during operation of the device in the recess of the housing or on the substrate, C) Application of an encapsulation element comprising a matrix material and zeolite particles to the layer sequence.

[0065] In one embodiment, process step C) comprises the following process steps: C1) Mixing precursors of a matrix material with zeolite particles, C2) Applying the mixture obtained from process step C1) to the layer sequence, C3) Polymerization of the mixture obtained from step C1) to form the matrix material. For example, the precursors of the matrix material are the precursors of polydimethylsiloxane, namely dichlorosilane and trimethylchlorosilane. C4) Drying of the compound obtained in step C3) on the layer sequence to form the encapsulation element.

[0066] In one embodiment, the application in C2) is carried out by dispensing, jetting, inkjetting, pouring or spraying.

[0067] In one embodiment, a solvent is added in process step C1).

[0068] In one embodiment, the encapsulation element is formed as a potting in the recess of the housing. Process step C2) then comprises process step C2') introducing the mixture obtained from process step C1) into the recess of the housing.

[0069] In one embodiment, the encapsulation element is formed as a layer. In this embodiment, process step C2) can comprise process step C2'') applying the mixture obtained from process step C1) to the layer sequence and the support or recess of the housing.

[0070] In one embodiment, in process step C1) precursors of the matrix material are mixed with zeolite particles and converter particles.

[0071] In one embodiment, the converter particles are quantum dots. The quantum dots can be agglomerated.

[0072] In one embodiment, in process step C1) precursors of the matrix material are mixed with zeolite particles and quantum dots or encapsulated quantum dots or encapsulated quantum dots with a second and third shell.

[0073] In one embodiment, the quantum dots or the encapsulated quantum dots can be mixed in a dispersion with the precursors of the matrix material and the zeolite particles in process step C1).

[0074] In one embodiment, the following process step C1*) takes place instead of process step C1): Mixing precursors of a matrix material with encapsulated quantum dots with a second and third shell.

[0075] In one embodiment, the zeolite particles used are functionalized with an organic group. In process step C), a chemical reaction then takes place between the zeolite particles and the matrix material or the precursors of the matrix material, resulting in the chemical bonding of the zeolite particles to the matrix material. Alternatively or additionally, the precursors of the matrix material can be functionalized with an organic group.

[0076] In one embodiment, the zeolite particles used are functionalized with an organic group. In process step C), a chemical reaction then takes place between the zeolite particles and the converter particles, resulting in the chemical bonding of the zeolite particles to the converter particles. Alternatively or additionally, the precursors of the matrix material can be functionalized with an organic group. In process step C), a chemical reaction then takes place between the precursors of the matrix material and the converter particles, resulting in the chemical bonding of the matrix material to the converter particles.

[0077] In one embodiment, the converter particles used are functionalized with an organic group. In process step C), a chemical reaction then takes place between the converter particles and the precursors of the matrix material and / or the zeolite particles, whereby a chemical bonding of the converter particles to the zeolite particles and / or the precursors of the matrix material occurs.

[0078] Further advantageous embodiments and developments of the invention will become apparent from the exemplary embodiments described below and in conjunction with the figures. Fig. 1, Fig. 2 and Fig. Figure 4 shows schematic side views of two embodiments of an optoelectronic component. Fig. Figure 3 shows a converter particle.

[0079] The Fig. Figure 1 shows a schematic side view of an embodiment of the optoelectronic component 1. The component has a housing 4a with a recess. A contact layer 9 is arranged on the housing within the recess. This layer serves for the electrical contact of the layer sequence 2 arranged above the contact layer 9. For example, the layer of the layer sequence 2 adjacent to the contact layer 9 is a p-doped semiconductor layer (not shown here). For further contact, the housing has a first via 5b, wherein the first via 5b and the contact layer 9 have electrical contact with each other. A first electrode 10b is arranged on the side of the housing opposite the contact layer 9 and is in direct contact with the first via 5b.Layer sequence 2 comprises an active layer (not shown here) that emits primary electromagnetic radiation during operation of the optoelectronic component 1. A second bond pad 7 is arranged in the recess of the housing. This second bond pad 7 is connected to the second via 5a in the housing 4a, with the second via 5a and the second bond pad 7 having direct contact with each other. A second electrode 10a is arranged on the side of the housing opposite the second bond pad 7 and is in direct contact with the second via 5a. A first bond pad 6 is arranged above layer sequence 2. Layer sequence 2 and the first bond pad 6 have direct contact with each other. The first bond pad serves for the electrical contact of layer sequence 2.For example, layer 2 of the layer sequence, which is in direct contact with the first bond pad 6, can be an n-doped semiconductor layer (not shown here). The first bond pad then serves to connect layer 2. The first bond pad 6 is connected to the second bond pad 7 via a bond wire 8.

[0080] An encapsulation element 3, configured as a potting compound, is arranged in the recess of the housing 4a. The first bond pad 6, the second bond pad 7, the first electrode 10b, the second electrode 10a, the first via 5b, and the second via 5a can, for example, be made of silver. The encapsulation element 3 comprises polydimethylsiloxane as the matrix material and zeolite A particles with a size of 40 nm. The encapsulation element 3 has direct contact with the first 6 and second bond pads 7, the contact layer 9, the layer sequence 2, and the housing 4a. In this embodiment, the layer sequence 2, the contact layer 9, the first bond pad 6, and the second bond pad 7 are completely, and the first via 5b and the second via 5a are almost completely, surrounded by either the housing 4a or the encapsulation element 3.This means that these elements are very well protected against environmental influences such as moisture, acids, alkalis, water and gases, which prevents premature failure of this component.

[0081] Additionally, the encapsulation element 3 can include converter particles such as quantum dots, which are configured to convert at least part of the primary electromagnetic radiation into secondary electromagnetic radiation during operation of the optoelectronic device. The quantum dots can consist of InP, InCuS₂, or CdSe. Alternatively, encapsulated quantum dots can be present. In this case, a quantum dot or agglomerate of quantum dots made of InP, InCuS₂, or CdSe forms a core with a diameter of 5 nm, surrounded by a first shell of ZnS that is 10 nm thick. The polydimethylsiloxane and the zeolite A particles are then arranged in the spaces between the quantum dots, the agglomerated quantum dots, the encapsulated quantum dots, or the agglomerated encapsulated quantum dots within the encapsulation element 3.

[0082] The Fig. Figure 2 shows a schematic side view of an embodiment of the optoelectronic device 1. The device has a substrate 4b on which a contact layer 9 is arranged. This layer serves to electrically contact the layer sequence 2 arranged above the contact layer 9. For example, the layer of the layer sequence 2 adjacent to the contact layer 9 is a p-doped semiconductor layer (not shown here). For further contact, the substrate 4b has a first via 5b, wherein the first via 5b and the contact layer 9 have electrical contact with each other. On the side of the substrate 4b opposite the contact layer 9, a first electrode 10b is arranged, which is in direct contact with the first via 5b. The layer sequence 2 comprises an active layer (not shown here) that emits primary electromagnetic radiation during operation of the optoelectronic device 1.Furthermore, a second bond pad 7 is arranged on the carrier 4b. For contacting the second bond pad 7, the carrier 4b has a second via 5a, with the second via 5a and the second bond pad 7 having direct contact with each other. On the side of the carrier 4b opposite the second bond pad 7, a second electrode 10a is arranged, which is in direct contact with the second via 5a. A first bond pad 6 is also arranged above the layer sequence 2. The layer sequence 2 and the first bond pad 6 have direct contact with each other. The first bond pad 6 serves for the electrical contacting of the layer sequence 2. For example, the layer of the layer sequence 2 that is in direct contact with the first bond pad 6 could be an n-doped semiconductor layer (not shown here). The first bond pad then serves for the n-contacting of the layer sequence 2.The first bond pad 6 is connected to the second bond pad 7 via a bond wire 8. The first bond pad 6, the second bond pad 7, the first electrode 10b, the second electrode 10a, the first via 5b, and the second via 5a can, for example, be made of silver. Furthermore, an encapsulation element 3 is present in the device. The encapsulation element 3 is formed as a layer and is arranged above the layer sequence 2, above the support 4b, and above the first 6 and second bond pads 7. The encapsulation element 3 is in direct contact with the layer sequence 2, the support 4b, the first and second bond pads 6 and 7, and the contact layer 9. The encapsulation element 3 comprises polydiphenylsiloxane as a matrix material and zeolite A particles with a size of 50 nm, or consists of polydiphenylsiloxane as a matrix material and the zeolite A particles.In this embodiment, the layer sequence 2, the contact layer 9, the first bond pad 6 and the second bond pad 7 are completely, and the first via 5a and the second via 5b are almost completely, surrounded by either the substrate 4b or the encapsulation element 3. This provides excellent protection against environmental influences such as moisture, acids, alkalis, water and gases, thus preventing premature failure of this component.

[0083] Fig. Figure 3 shows a converter particle. An agglomerate of InP, InCuS₂, or CdSe quantum dots forms a core 11 with a diameter of 5 nm, surrounded by a first shell 12 of ZnS that is 10 nm thick. The arrangement of core 11 and first shell 12 is also referred to as an encapsulated quantum dot. The second shell 12 is bonded to the second shell 14 via chemical bonds 13 through an organic group, for example, a vinyl group, 3-glycidoxypropylsilane, methacryloxypropyltrimethoxysilane, or phenyltrimethoxysilane. The second shell 14 comprises zeolite A particles with a size of 40 nm and a matrix material, for example, polydimethylsiloxane, and has a thickness of 100 nm. The shell 15 consists of Ta₂O₅ with a thickness of 50 nm.

[0084] The Fig. Figure 4 shows a schematic side view of an embodiment of the optoelectronic component 1. In comparison to the optoelectronic component of the Fig. 1 includes the encapsulation element 3, for example, polydimethylsiloxane as a matrix material and the converter particles, as described in Fig. 3 are described. It is also possible that the encapsulation element consists of polydimethylsiloxane and the converter particles, as described in Fig. The three described above exist.

Claims

[1] Optoelectronic component (1) comprising - a layer sequence (2) with an active layer which is configured to emit primary electromagnetic radiation during operation of the device, - an encapsulation element (3) which is arranged in the beam path of the primary electromagnetic radiation and above the layer sequence (2) and which comprises a matrix material and zeolite particles, wherein the encapsulation element (3) comprises converter particles and the converter particles are configured to convert at least partially the primary electromagnetic radiation into secondary electromagnetic radiation during operation of the device and the zeolite particles are bound to the converter particles via chemical bonds. [2] Optoelectronic device (1) according to claim 1, wherein the zeolite particles have a size of 30 nm to 300 nm. [3] Optoelectronic device (1) according to one of the preceding claims, wherein the matrix material is selected from a group comprising silicones, polyacrylates, polyurethanes, epoxy resins, inorganic-organic hybrid polymers and combinations thereof. [4] Optoelectronic device (1) according to any of the preceding claims, wherein the zeolite particles are zeolite A particles. [5] Optoelectronic device (1) according to one of the preceding claims, wherein the zeolite particles are homogeneously distributed in the matrix material. [6] Optoelectronic component (1) according to one of the preceding claims, wherein the encapsulation element (3) is designed as a potting compound or as a layer applied over the layer sequence (2). [7] Optoelectronic device (1) according to one of the preceding claims, wherein the encapsulation element (3) comprises quantum dots as converter particles. [8] Optoelectronic device (1) according to claim 7, wherein the quantum dots comprise a II / IV or III / V semiconductor. [9] Optoelectronic device (1) according to one of claims 7 to 8, wherein the quantum dots or an agglomerate of quantum dots form a core surrounded by a first shell of an inorganic material, wherein the inorganic material is connected via chemical bonds to a second shell comprising the matrix material and the zeolite particles. [10] Method for manufacturing an optoelectronic device (1) comprising the process steps A) Providing a housing (4a) having a recess or a support (4b), B) Arranging a sequence of layers (2) with an active layer designed to emit primary electromagnetic radiation during operation of the device in the recess of the housing (4a) or on the substrate (4b), C) Applying an encapsulation element (3) comprising a matrix material and zeolite particles to the layer sequence (2), wherein the encapsulation element (3) comprises converter particles and the converter particles are configured to convert at least partially the primary electromagnetic radiation into secondary electromagnetic radiation during operation of the device and the zeolite particles are bound to the converter particles via chemical bonds. [11] The method of claim 10, wherein process step C) comprises the following process steps: C1) Mixing precursors of the matrix material with the zeolite particles, C2) Applying the mixture obtained in step C1) to the layer sequence (2), C3) Polymerization of the mixture obtained from step C1) to form the matrix material, C4) Drying of the compound obtained in step C3) on the layer sequence to form the encapsulation element (3). [12] Optoelectronic device (1) comprising - a layer sequence (2) with an active layer which is configured to emit primary electromagnetic radiation during operation of the device, - an encapsulation element (3) which is arranged in the beam path of the primary electromagnetic radiation and above the layer sequence (2) and which comprises a matrix material and zeolite particles, - wherein the encapsulation element (3) comprises quantum dots as converter particles which are configured to convert at least part of the primary electromagnetic radiation into secondary electromagnetic radiation during operation of the device, wherein the quantum dots or an agglomerate of quantum dots form a core which is surrounded by a first shell of an inorganic material, wherein the inorganic material is connected via chemical bonds to a second shell comprising the matrix material and the zeolite particles.

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