METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT AND PROTECTIVE LAYER

Abstract

Method for manufacturing an optoelectronic component, in which comprising an electrically conductive layer (14), a first electrode (20), and at least one first contact section (16) and at least one second contact section (18) formed over a support (12), an optically functional layer structure (22) is formed over the first electrode (20), a second electrode (23) is formed above the optically functional layer structure (22), wherein the first electrode (20) is electrically connected to the second contact section (18) and the second electrode (23) is electrically connected to the first contact section (16), a protective layer (40), which is designed as a self-organizing monolayer, is applied to at least a partial area of ​​the at least one first contact section (16) and / or the at least one second contact section (18), wherein the protective layer (40) consists of a material that is repellent to a substance for producing an encapsulation layer (24), and the encapsulation layer (24) is formed over the second electrode (23) and over the at least one first and at least one second contact section (16, 18), wherein at least one partial area remains free of the encapsulation layer (24) due to the protective layer (40), wherein surfaces of the at least one first contact section (16) and of the at least one second contact section (18) facing away from the support (12) are completely covered by the encapsulation layer (24) and the protective layer (40) and / or an uppermost surface of the optoelectronic device is completely covered by the encapsulation layer (24) and the protective layer (40), wherein the carrier (12), the encapsulation layer (24) and the at least one first contact section (16) and / or the at least one second contact section (18) terminate flush against at least one side surface, wherein the encapsulation layer (24) comprises a stack of layers with a layer sequence of an ALD layer / buffer layer / ALD layer, wherein the buffer layer is formed from a polymer, wherein the buffer layer is applied exclusively to an optically active surface of the optically functional layer structure (22), and where the lateral side faces of the buffer layer are covered by the material of the ALD layers.

Description

[0001] The invention relates to a method for manufacturing an optoelectronic component, an optoelectronic component and a protective layer.

[0002] In this application, optoelectronic components are understood to be optical electronic components that generate light using electricity, so-called light-emitting components, for example LEDs or OLEDs, or that generate electricity using light, so-called light-absorbing components, for example solar cells or light sensors.

[0003] Organic optoelectronic devices, also known as organic optoelectronic devices, are finding increasingly widespread application. For example, organic light-emitting diodes (OLEDs) are increasingly being used in general lighting, such as in area light sources. An OLED can have an anode and a cathode with an organic functional layer system in between.The organic functional layer system can include one or more emitter layers in which electromagnetic radiation is generated, a charge-generating layer structure consisting of two or more charge-generating layers (CGL) for charge-generating layer generation, as well as one or more electron-blocking layers, also referred to as hole transport layers (HTL), and one or more hole-blocking layers, also referred to as electron transport layers (ETL), to direct the current flow.

[0004] Optoelectronic components, such as the electrodes and the intervening optical functional layers, are regularly encapsulated to protect them from environmental influences like air or moisture, and thus from corrosion. Ideally, such encapsulation creates a hermetically sealed seal of the optoelectronic component.

[0005] For example, an OLED can be encapsulated with an ALD thin-film layer using an ALD process. In the ALD process, the entire optoelectronic device is typically coated, and in particular, areas of the device that should ideally remain uncoated are also coated. If, for instance, the encapsulation layer is electrically insulating, contact areas for electrically connecting the optoelectronic device must be free of the encapsulation layer to allow for electrical contact, such as via ACF bonds. Therefore, after its formation, the encapsulation layer must be removed from the relevant areas, especially the contact areas.

[0006] Exposing the contact areas can be done manually by scraping or by laser ablation. Aside from the inherently time-consuming scraping or laser ablation steps, the established method also has disadvantages, as the contact areas can be scratched during scraping or damaged to a greater or lesser degree during laser ablation due to the heat generated. Therefore, these methods are unsuitable or only marginally suitable for component architectures where the corresponding metal electrode is very thin and / or where selective ablation of the ALD layer from the contact area on the metal electrode is difficult or impossible. This is particularly true for thermally vapor-deposited metal contacts, such as those made of aluminum.Here, the ALD layer cannot be selectively laser-ablated from the metal contact; instead, unintended ablation of the metal contact can occur, leading to component failure.

[0007] Documents DE 10 2014 102 346 A1 and WO 2015 / 055 766 A1 describe optoelectronic components and methods for manufacturing optoelectronic components.

[0008] Publication US 4 143 456 A describes an insulation method for semiconductor devices.

[0009] Publication US 2014 / 0 338 728 A1 describes structured organic semiconductor layers.

[0010] Document US 2010 / 0157585A1 describes an organic luminescent device and lighting equipment.

[0011] Document US 2014 / 0 170 785 A1 describes a mask management system and a method for OLED encapsulation.

[0012] One object of the invention is to provide a method for manufacturing an optoelectronic component that is simple and / or cost-effective and / or contributes to the reliable operation of the optoelectronic component.

[0013] One object of the invention is to provide an optoelectronic component that can be manufactured easily and / or cost-effectively and / or that can be operated reliably.

[0014] The problems are solved by a method for manufacturing an optoelectronic component according to independent claim 1 and by an optoelectronic component according to independent claim 7.

[0015] One object of the invention is solved by a method for manufacturing an optoelectronic component in which: a first electrode and at least one contact section are formed over a support; an optically functional layer structure is formed over the first electrode; a second electrode is formed over the optically functional layer structure, wherein the first electrode or the second electrode is electrically connected to the contact section; a protective layer is applied to at least a partial area of ​​the contact section, wherein the protective layer is formed of a material that is repellent to a substance for manufacturing an encapsulation layer, and the encapsulation layer is formed over the second electrode and over the contact section, wherein the partial area remains free of the encapsulation layer due to the protective layer.

[0016] The protective layer is applied over the partial area or the entire contact section. This protective layer prevents the encapsulation layer from forming over the contact section, particularly over the partial area. This ensures that the contact section, or at least the partial area, remains free of the encapsulation layer. Consequently, the encapsulation layer no longer needs to be subsequently removed from the contact section, especially from the partial area. This eliminates the need for the removal step of the encapsulation layer over the contact section and prevents damage to the corresponding electrode in the contact section area.This means that the optical electronic component can be manufactured in a simple and cost-effective way, and that, due to the lack of damage to the electrode, the optoelectronic component is very unlikely to fail and can therefore be operated reliably.

[0017] According to a further development, the substance used to produce the encapsulation layer is a precursor required for its production. In a synthesis pathway, a precursor (from the Latin "praecursor") is a molecule that serves as a starting material (reactant) in a reaction. From this, sometimes with the involvement of one, two, or more other precursors, a complex and differentiated product, namely the encapsulation layer, is formed. In this context, the synthesis pathway is the production of the encapsulation layer. Since the protective layer is repellent to the precursor, the precursor cannot attach to the contact area, particularly to the specific part of the contact area. This effectively and simply prevents the formation of the encapsulation layer over the contact area, especially the specific part of the contact area.

[0018] According to a further development, the material of the protective layer is repellent to at least two precursors required for the formation of the encapsulation layer. Since the protective layer is repellent to both precursors, the precursors cannot adhere to the contact section, particularly to the relevant portion of the contact section. This effectively and simply prevents the formation of the encapsulation layer over the contact section, especially the relevant portion.

[0019] According to further training, the encapsulation layer is formed using either an ALD or a MLD process. The ALD (Atomic Layer Deposition) process is a significantly modified CVD (Chemical Vapor Deposition) process for depositing thin films through two or more cyclically performed self-limiting surface reactions. The films typically have a polycrystalline or amorphous structure. For single-crystal (epitaxial) films, the process is also known as Atomic Layer Epitaxy (ALE). When molecular fragments, rather than individual atoms from the precursor molecules, are deposited in a self-limiting reaction, it is called Molecular Layer Deposition (MLD).Both the ALD process and the MLD process make it possible to produce a very thin and at the same time very stable and highly dense encapsulation layer.

[0020] According to a training course, the protective layer is applied to the sub-area in a structured manner. In this context, "structured application" means that the protective layer is applied directly to the contact area, specifically the sub-area of ​​the contact area, in its final structure. In contrast, with an unstructured application, the protective layer is first applied over a large area and then structured, requiring the removal of the protective layer in a separate process step in areas where it is not desired. The structured application of the protective layer eliminates the need for subsequent removal in unwanted areas, thus making this process step unnecessary.

[0021] According to a further development process, the materials of the protective layer and the contact section are designed such that the protective layer material adheres exclusively to the contact section. Specifically, the protective layer material is selected to correspond with the material of the contact section, particularly the sub-section of the contact section, and the surfaces and materials adjacent to the contact section, ensuring that it adheres exclusively to the contact section, particularly the sub-section. In this context, the fact that the protective layer material adheres exclusively to the contact section means that it does not adhere to the surfaces of other materials of the optoelectronic component with which it comes into contact during the formation of the protective layer. For example, the contact section contains or is composed of chromium, nickel, or ITO.This can help ensure that the protective layer adheres only to the contact area. This allows the protective layer material to be applied to the surfaces without much regard for its final structure, yet still achieve a structured application, as the material adheres only to the designated areas, particularly the contact area, or more specifically, the portion of the contact area. This can contribute to a particularly simple and cost-effective manufacturing process for the protective layer. Alternatively, the protective layer can be applied in a structured manner using a printing process, such as inkjet printing.

[0022] The protective layer is formed as a self-assembled monolayer. The self-assembled monolayer (SAM) is referred to as SAM in the following. The SAM functionalizes a surface of the contact section, particularly a specific portion of it, in such a way that at least one substance necessary for forming the encapsulation layer cannot adhere to the surface of the contact section. Therefore, the encapsulation layer does not form in this area. Alternatively, the protective layer can also be formed by a different layer structure.

[0023] One object of the invention is solved by the optoelectronic component comprising: the first electrode and the at least one contact section above the substrate; the optically functional layer structure above the first electrode; the second electrode above the optically functional layer structure, wherein the first electrode or the second electrode is electrically connected to the contact section; the protective layer on at least the partial area of ​​the contact section, wherein the protective layer is formed of the material that is repellent to the material for producing the encapsulation layer; and the encapsulation layer above the second electrode, wherein the partial area is free of the encapsulation layer.

[0024] The further developments and advantages explained above in connection with the method for manufacturing the optoelectronic component can readily be transferred to the optoelectronic component.

[0025] According to a further education course, the substance used to produce the encapsulation layer is the precursor.

[0026] According to further training, the material of the protective layer is repellent to at least two precursors.

[0027] According to further training, the encapsulation layer is formed using an ALD process or an MLD process.

[0028] According to further training, the protective layer is applied exclusively to the sub-area.

[0029] According to a further development process, the materials of the protective layer and the contact section are designed such that the material of the protective layer adheres exclusively to the contact section. For example, the contact section contains or is composed of chromium, nickel, or ITO.

[0030] The protective layer is a self-organizing monolayer. A protective layer on a contact section for electrically contacting the electronic or optoelectronic component is further described, wherein the protective layer is formed of a material that is repellent to a substance for producing an encapsulation layer for encapsulating the electronic or optoelectronic component.

[0031] The further developments and advantages explained above in connection with the process for manufacturing the optoelectronic component can readily be transferred to the protective layer.

[0032] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0033] They show: Fig. 1 a lateral sectional view of an embodiment of an optoelectronic component; Fig.2 a lateral sectional view of a first state during an exemplary method for manufacturing the optoelectronic component, Fig. 3 a lateral sectional view of a second state during the process for manufacturing the optoelectronic component, Fig. 4 a lateral sectional view of a third state during the process for manufacturing the optoelectronic component, Fig. 5 an exemplary embodiment of a molecule, Fig. 6. An exemplary sequence of an ALD procedure, Fig. 7 a schematic explanation of a design of an exemplary embodiment of a protective layer, Fig. 8 an example embodiment of a molecule.

[0034] The following detailed description refers to the accompanying drawings, which form part of this description and show specific embodiments in which the invention can be implemented. Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for illustrative purposes only and is in no way restrictive. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention. It is understood that the features of the various embodiments described herein may be combined with one another unless specifically stated otherwise.The following detailed description is therefore not to be interpreted in a restrictive sense, and the scope of protection of the present invention is defined by the appended claims. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0035] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber can be, for example, a solar cell. An electromagnetic radiation emitter can, in various embodiments, be an electromagnetic radiation emitting semiconductor component and / or be configured as an electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting diode, an electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation can be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the electromagnetic radiation-emitting component can be, for example, a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0036] Fig.Figure 1 shows a side sectional view of an embodiment of an optoelectronic component 10. The optoelectronic component 10 has a substrate 12. The substrate 12 can be translucent or transparent. The substrate 12 serves as a support element for electronic elements or layers, for example, light-emitting elements. The substrate 12 can, for example, be made of or comprise a plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the substrate 12 can be made of or comprise a plastic film or a laminate with one or more plastic films. The substrate 12 can be mechanically rigid or mechanically flexible.

[0037] An optoelectronic layer structure is formed on the support 12. The optoelectronic layer structure comprises an electrically conductive layer 14, which includes a first contact section 16, a second contact section 18, and a first electrode 20. Alternatively, the first electrode 20, the first contact section 16, and / or the second contact section 18 can be formed from different layers and / or from different materials. The support 12 with the electrically conductive layer 14, and in particular the support 12 with the first electrode 20 and the two contact sections 16 and 18, can also be referred to as the substrate. A first barrier layer (not shown), for example, a first barrier thin film, can be formed between the support 12 and the electrically conductive layer 14.

[0038] The first electrode 20 is electrically isolated from the first contact section 16 by means of an electrical insulating barrier 21. The second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure. The first electrode 20 can be configured as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 and / or the first electrode layer 14 comprise an electrically conductive material, for example, a metal, such as silver, and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. The first electrode 20 can, for example, comprise a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa.An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 20 can, alternatively or additionally to the aforementioned materials, comprise: networks of metallic nanowires and particles, for example, made of Ag; networks of carbon nanotubes; graphene particles and layers; and / or networks of semiconducting nanowires. The contact sections 16, 18 can, for example, comprise or be composed of metal. For instance, contact sections 16, 18 can each comprise a layer stack of different metals, for example, a chromium / aluminum / chromium layer stack.

[0039] Above the first electrode 20, an optically functional layer structure, for example an organic functional layer structure 22, of the optoelectronic layer structure is formed. The organic functional layer structure 22 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 22 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons.The electron injection layer serves to reduce the band gap between a second electrode 23 and the electron transport layer. Furthermore, the organic functional layer structure 22 can comprise one, two, or more functional layer structure units, each of which includes the aforementioned sublayers and / or further intermediate layers.

[0040] Above the organic functional layer structure 22, the second electrode 23 of the optoelectronic layer structure is formed and is electrically coupled to the first contact section 16. The second electrode 23 can be configured according to one of the embodiments of the first electrode 20, whereby the first electrode 20 and the second electrode 23 can be identical or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. Correspondingly to the first electrode, the second electrode 23 serves as the cathode or anode of the optoelectronic layer structure.

[0041] The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the area of ​​the optoelectronic device 10 in which electric current flows to operate the optoelectronic device 10 and / or in which electromagnetic radiation is generated or absorbed. A getter structure (not shown) can be arranged on or above the active region. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances that are harmful to the active region.

[0042] An encapsulation layer 24 of the optoelectronic layer structure is formed over the second electrode 23 and partially over the first contact section 16 and partially over the second contact section 18. This encapsulation layer 24 encapsulates the optoelectronic layer structure. The encapsulation layer 24 can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, particularly water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the support 12 can be configured corresponding to an embodiment of the encapsulation layer 24.

[0043] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact area 32 is exposed in the first recess, and a second contact area 34 is exposed in the second recess. The first contact area 32 serves to electrically contact the first contact section 16, and the second contact area 34 serves to electrically contact the second contact section 18.

[0044] Fig. Figure 2 shows a side sectional view of a first state during an exemplary method for manufacturing an optoelectronic component, which, for example, largely corresponds to the one described in Fig. can correspond to the optoelectronic component 10 shown in 1. In the case of the Fig.In the state shown in Figure 2, the substrate, the organic functional layer structure 22 above the first electrode 20 and the second electrode 23 above the organic functional layer structure are already formed.

[0045] Fig.Figure 3 shows a lateral sectional view of a second state during the process for manufacturing the optoelectronic component 10. In this second state, a protective layer 40 is formed in the first contact area 32 over the first contact section 16, and a protective layer 40 is formed in the second contact area 34 over the second contact section 18. In this embodiment, the protective layer 40 is formed by a self-assembled monolayer (SAM). Alternatively, the protective layer 40 can also be formed by a different type of layer. The protective layer 40 is applied only to those parts of the contact sections 16 and 18 that are not to be ALD-coated, so that the remainder of the optoelectronic component 10 can subsequently be coated with ALD and thus thin-film encapsulated.

[0046] The self-organizing monolayer can be formed by applying a suitable solution or suspension containing a suitable substance to the corresponding areas on the contact sections 16 and 18. Suitable substances include, for example, alkanethiols, alkyltrichlorosilanes, and fatty acids. These form simple monolayers with a high degree of internal order on metals such as gold, silver, platinum, and copper, as well as graphite and silicon. The application of the protective layer 40 to the contact sections 16 and 18 can be structured, for example, by targeted printing, such as inkjet printing. Alternatively, selective coating of the metal contacts can be achieved by appropriately selecting the SAM head groups of the molecules in the material of the protective layer 40 and appropriately designing the contact sections 16 and 18, particularly by appropriately selecting the material of the contact sections 16 and 18.In this case, the entire, as far as completed, optoelectronic component 10 can itself be coated with the material of the protective layer 40 in an unstructured manner, for example from the gas phase, and yet the protective layer 40 is applied in a structured manner, since it adheres only in the areas intended for this purpose, in particular the contact sections 16, 18, or at least in the partial areas of the contact sections 16, 18.

[0047] The protective layer 40 is intended to prevent the subsequent formation of the encapsulation layer 24 by means of an ALD coating. SAMs with hydrophobic end groups are particularly suitable for this purpose, as they render the corresponding portion of the contact section 16, 18 water-repellent. For example, when coating with an ALD to form an encapsulation layer 24 made of Al₂O₂ or ZrO₂, it is essential that the surface to be coated has OH groups or that water molecules can adsorb onto the surface to be coated during an initial ALD pulse. The appropriate SAMs prevent this for the portions of the contact section 16, 18.

[0048] Incidentally, the exposed portions of the contact sections 16, 18 can subsequently be clearly distinguished in a corresponding analysis, for example an SEM analysis, from a scraped or laser-ablated contact section 16, 18 as known from the prior art.

[0049] Fig. Figure 4 shows a side sectional view of a third state during the process for manufacturing the optoelectronic component 10. In particular, it shows Fig.4. The optoelectronic component 10 immediately after the formation of the encapsulation layer 24, wherein the protective layer 40 is free of the encapsulation layer 24. In particular, after ALD coating of the OLED component, the SAM-treated sub-areas of the contact sections 16, 18 are free of the thin-film encapsulation without having to be exposed beforehand. Thus, the sub-areas of the contact sections 16, 18 remain automatically uncoated during the formation of the encapsulation layer 24, especially during the ALD process, and can be electrically contacted without a complex downstream laser ablation step or without scraping. This enables component architectures for the optoelectronic component 10 in which selective ablation of the encapsulation layer 24 from the corresponding contact section 16, 18 is not possible or only possible with difficulty, as, for example, in the case of thermally vapor-deposited Al contact sections.

[0050] The ALD process allows for the reproducible production of very thin, functional layers. In this process, the necessary starting materials, also called precursors, are not added simultaneously, but alternately, to the substrate to be coated in a coating chamber, also known as a reactor. The starting materials can then alternately deposit on the surface of the substrate or on the previously deposited precursor material, thus forming a chemical bond. This makes it possible to grow a maximum of one monolayer of the coating per cycle repetition, i.e., the subsequent addition of the necessary starting materials. The number of cycles allows for precise control of the layer thickness.The first starting material added adheres only to the surface to be coated, and only the second starting material added subsequently can undergo chemical reactions with the first. The chemical reactions of the starting materials are limited by the number of reactants on the surface, i.e., they are self-limiting.

[0051] A similar self-limiting surface reaction can be used to form organic films, for example, polymer films such as polyamide. This organic film formation can be termed molecular layer deposition (MLD) because a portion of a molecule is deposited on the surface in each cycle. The MLD process is also suitable for forming the encapsulation layer 24. The MLD precursors can have homobifunctional reactants. In other words, the starting materials can each have two identical functional groups. A self-terminating MLD reaction of each layer can be formed with heterobifunctional reactants, meaning each starting material can have two different functional groups. One of the functional groups can react with the chemical group on the surface, and the other cannot.The heterobifunctional reactants can therefore only be monofunctional and thus prevent a double reaction among themselves, which could, for example, lead to termination of the polymer chain.

[0052] ALD and MLD enable highly conformal layer growth, allowing even surfaces with large aspect ratios to be uniformly covered.

[0053] A selection of substances that are not considered restrictive as ALD precursors is shown, for example, in the following table: First precursor Second precursor resulting connection Trimethylaluminum(Al(CH3)3 - TMA) H2O; Ethylene glycol; O3; O2 plasma, OH groups Alucone (Al2O3) BBr3 H2O B2O3 Tris(dimethylamino)silane H2O2 SiO2 Cd(CH3)2 H2S CdS Hf[N(Me2)]4 H2O HfO2 Pd(hfac)2 H2; H2 Plasma Pd MeCpPtMe3 O2 plasma PtO2 MeCpPtMe3 O2 plasma; O2 plasma + H2 Pt Si(NCO)4; SiCl4 H2O SiO2 TDMASn H2O2 SnO2 C 12 H 26 N2Sn H2O2 SnO x TaCl5 H2O Ta2O5 Ta[N(CH3)2]5 O2 Plasma Ta2O5 TaCl5 H Plasma Ta TiCl4 H Plasma Ta Ti[OCH(CH3)]4; TiCl4 H2O TiO2 VO(OC3H9)3 O2 V2O5 Zn(CH2CH3)2 H2O; H2O2 ZnO Zr(N(CH3)2)4)2 H2O ZrO2 Bis(ethylcyclopentadienyl)magnesium H2O MgO Tris(diethylamido)(tert-butylimido)tantalum N2H4 TaN

[0054] A selection of substances that are not considered restrictive as MLD precursors is shown, for example, in the following table: First precursor Second precursor resulting connection p-Phenylenediamines Terephthaloyl chloride Poly(p-phenylene terephthalamide) 1,6-Hexanediamine C6H8Cl2O2 (Adipolychloride) Nylon 66

[0055] The encapsulation layer 24 has one, two, or more stacks of different layers, or is formed by them. The encapsulation layer 24 has a stack of layers with the following sequence: ALD layer / buffer layer / ALD layer. The buffer layer can be deposited, for example, using CVD in an unstructured manner, so that the contact sections 16, 18 are initially covered, and subsequently structured so that the contact sections 16, 18 are no longer covered. In other words, the buffer layer can first be deposited, among other things, on the contact sections 16, 18, and then the contact sections 16, 18 can be exposed again. Alternatively, the buffer layer can be applied in a structured manner, for example, using a printing process such as inkjet printing, such that the contact sections 16, 18 remain free of the buffer layer material.The buffer layer contains or is formed from a polymer.

[0056] If the buffer layer is applied in a structured manner, it is applied exclusively to the optically active area or only slightly beyond it. This ensures that the lateral edges of the buffer layer are covered by the ALD layer material. This is particularly advantageous if the buffer layer is made of a polymer, as it can then be water-conducting. In contrast, if the buffer layer is applied across the entire surface, water and / or oxygen could penetrate laterally from the edges.

[0057] Fig.Figure 5 shows an exemplary process of an ALD process, for example an ALD process for producing the encapsulation layer 24, wherein the formation of the encapsulation layer 24 on the partial areas of the contact sections 16, 18 is prevented due to a water-repellent property of the protective layer 40 and the corresponding SAMs.

[0058] In step S2, a surface on which the encapsulation layer is to be applied, in particular surfaces of the contact sections 16, 18 and the second electrode 23, is prepared.

[0059] In step S4, a first precursor, for example Al(CH3)3, is introduced in the gas phase and deposits on the prepared surface, but not on the protective layer 40, which repels the first precursor. Additionally, a byproduct, for example CH4, can also be introduced in step S4, which can also deposit on the water molecules, but not on the protective layer 40.

[0060] In step S6, a purification process takes place during which superfluous molecules of the first precursor are removed.

[0061] In step S8, a second precursor is introduced in the gas phase, for example H2O in the form of water vapor, and attaches itself to the molecules of the first precursor, whereby the corresponding water molecules do not attach to the protective layer 40.

[0062] In step S10, a purification process takes place during which superfluous molecules of the second precursor are removed.

[0063] Fig. Figure 6 shows a schematic explanation of a first step of an ALD process, for example, an ALD process for producing the encapsulation layer 24, wherein the formation of the encapsulation layer 24 on the partial areas of the contact sections 16, 18 is prevented due to a water-repellent property of the protective layer 40 and the corresponding SAMs. In the first step, the first precursor couples to the OH groups on the prepared surface, but not to the surface of the protective layer 40.

[0064] Fig. Figure 7 shows a schematic explanation of a second step of the ALD procedure according to Fig. 6. In the second step, the second precursor, in particular water, couples to the molecules of the first precursor.

[0065] Fig.Figure 8 shows an embodiment of a molecule 50. The protective layer 40 can be formed using such molecules 50. The molecule 50 has a head group 52 and an anchor group 56 covalently bonded to the head group 52.

[0066] The head group 52 is a hydrocarbon group. In one embodiment, the head group 52 does not include any hydrophilic groups, such as hydroxyl, thiol, amine, or carboxyl groups, and is therefore hydrophobic. In another embodiment, the head group 52 also does not include any heteroatoms, such as O, S, and N.

[0067] The head group 52 can be a substituted or unsubstituted, branched or unbranched alkyl group with 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms, more preferably 3 to 15 carbon atoms; a substituted or unsubstituted, branched or unbranched alkenyl or alkynyl group with 2 to 30 carbon atoms, preferably 3 to 20 carbon atoms, more preferably 4 to 15 carbon atoms; a substituted or unsubstituted (poly-)cyclic alkyl or alkenyl group with 3 to 14 carbon atoms, preferably 5 to 8 carbon atoms; a substituted or unsubstituted aryl group with 6 carbon atoms, wherein the aryl group can optionally be fused (annelated) with one or more further aryl group(s);or a substituted or unsubstituted arylalk(en / yn)yl group or a substituted or unsubstituted alk(en / yn)ylaryl group, wherein aryl, alkyl, alkenyl, and alkynyl groups are defined above. The substituents of the aforementioned groups are, for each occurrence, independently selected from the group consisting of Br, Cl, I, F, and the pseudohalogens -CN, -N3, -OCN, -NCO, -CNO, -SCN, -NCS, and -SeCN. In some embodiments, the substituents are selected from the group consisting of Br, Cl, I, and F.

[0068] Exemplary, non-limiting embodiments of the aforementioned groups are, in this context, methyl, ethyl, n-propyl, n-butyl, n-pentyl, and n-hexyl for unbranched alkyl groups; isopropyl, isobutyl, sec-butyl, tert-butyl, 2-pentyl, 3-pentyl, isopentyl, and neopentyl for branched alkyl groups; vinyl and allyl for unbranched alkenyl groups; isobutenyl and isopentenyl for branched alkenyl groups; ethynyl, 1-propynyl, 3-propynyl, 1-butyn-1-yl, and 2-butyn-1-yl for unbranched alkynyl groups; 2-pentyn-4-yl and 2-hexyn-5-yl for branched alkynyl groups; cyclopropane, cyclobutane, cyclopentane, and cyclohexane for cyclic alkyl groups; Norbornane and bicyclo[2.2.2]octane for polycyclic alkyl groups; cyclobutadiene, cyclopentene and cyclopentadiene for cyclic alkenyl groups; 2-norbornene and bicyclo[2.2.2]oct-2-ene for polycyclic alkenyl groups; phenyl for aryl groups and naphthalenyl, anthracenyl and phenanthrenyl for fused aryl groups.The head group 52 may be perfluorinated in particular to further increase the hydrophobic effect.

[0069] The degree of order in the protective layer 40 built from the molecules 50 can be controlled and influenced by choosing a certain minimum number of carbon atoms in the structure of the head group 52, in particular a certain minimum number of linearly arranged carbon atoms in the structure of the head group 52.

[0070] According to one embodiment of the present invention, the head group 52 is accordingly a carbon group comprising at least one linear carbon chain. The at least one linear carbon chain can be an alkyl, alkenyl, or alkynyl group, as defined above, wherein the at least one linear carbon chain has a minimum length of 3, preferably at least 4, more preferably at least 5, and in particular at least 6 carbon atoms. The at least one linear carbon chain can be substituted or unsubstituted, as defined above. In addition to the at least one linear carbon chain, the head group 52 can comprise at least one further non-linear carbon group with a certain minimum number of carbon atoms.The at least one non-linear carbon group can be a (poly-)cyclic alkyl or alkenyl group, as defined above, or an aryl group, as defined above, which can optionally be substituted, as defined above.

[0071] According to a further embodiment, the head group 52 is thus a substituted or unsubstituted linear alkyl, alkenyl or alkynyl group with at least 3 carbon atoms, preferably at least 4 carbon atoms, more preferably at least 5 carbon atoms and in particular at least 6 carbon atoms.

[0072] According to a further embodiment, the head group 52 is a substituted or unsubstituted alkylaryl, alkenylaryl or alkynylaryl group, wherein the respective alkyl, alkenyl or alkynyl group is a substituted or unsubstituted linear alkyl, alkenyl or alkynyl group having at least 3 carbon atoms, preferably at least 4 carbon atoms, more preferably at least 5 carbon atoms and in particular at least 6 carbon atoms, and wherein the aryl group is defined as above.

[0073] According to a further embodiment, the head group 52 is a substituted or unsubstituted arylalkyl, arylalkenyl or arylalkynyl group, wherein the respective alkyl, alkenyl or alkynyl group is a substituted or unsubstituted linear alkyl, alkenyl or alkynyl group with at least 3 carbon atoms, preferably at least 4 carbon atoms, more preferably at least 5 carbon atoms and in particular at least 6 carbon atoms, and wherein the aryl group is defined as above.

[0074] According to some embodiments, the head group 52 comprises at least one linear carbon chain, as defined above, with a total length of at least 7, preferably at least 8, in particular at least 9 carbon atoms.

[0075] According to another embodiment, the head group 52 is defined by the formula -C8H 16 CF3.

[0076] The anchor group 56 is the functional part of the molecule 50 that is capable of adsorbing onto the surface onto which the molecules are applied according to the present invention. According to the present invention, the anchor group 56 thus comprises at least one chemical group that is capable of forming a bond with metal atoms of the respective contact section via adsorption processes, so that the individual molecules 50 of the protective layer are bound to the surface of the contact section via their respective head group 56.

[0077] Non-limiting examples in this context include carboxyl groups bonding to a nickel or titanium contact section, nitrile groups bonding to a silver contact section, thiol groups bonding to a silver, gold, chromium, or copper contact section, amine groups bonding to a copper contact section, or phosphoric acid groups bonding to an aluminum or ITO contact section. In some embodiments, the anchor group 56 comprises at least one of the aforementioned groups. In some embodiments, the anchor group 56 comprises at least two of the aforementioned groups, wherein these are located no more than two carbon atoms apart on the molecule 50, and the head group 52 is selected accordingly as defined herein.

[0078] According to one embodiment, the head group 52 of molecule 50 is defined by the formula -C8H 16CF3 and the anchor group 56 is defined by the formula -SH, so that the molecule 50 is defined by the formula SHC8H 16 CF3.

[0079] According to another embodiment, the head group 52 of molecule 50 is defined by the formula -C8H 16 CF3 and the anchor group 56 is defined by the formula -COOH, so that the molecule 50 is defined by the formula COOHC8H 16 CF3. If the optoelectronic component 10 is designed such that the head group 56 bonds exclusively to the contact section 16, 18, but to no other exposed layer of the optoelectronic component 10, the protective layer 40 can be applied in an unstructured manner as explained above, for example from the gas phase, and yet will ultimately be applied in a structured manner, since the bonding of the material of the protective layer 40 automatically and selectively occurs exclusively at the contact section 16, 18.

[0080] Fig. Figure 9 shows an embodiment of a molecule 50. The protective layer 40 can be formed using such molecules 50. The molecule 50 has the head group 52 and the anchor group 56. The anchor group 52 has C8H 16 CF3, which is hydrophobic. The head group contains SH, which selectively binds to chromium. If the contact sections 16, 18, or at least parts of the contact sections 16, 18, are formed from chromium, these molecules 50 attach exclusively to the contact sections 16, 18, particularly to the parts of the contact sections 16, 18. REFERENCE MARK LIST 10 optoelectronic component 12 carriers 14 electrically conductive layer 16 first contact section 18 second contact section 20 first electrode 22 organic functional layer structure 23 second electrode 24 Encapsulation layer 32 first contact area 34 second contact area 36 Adhesive layer 38 cover bodies 40 protective layer 50 molecules 52 Anchor group 54 spacers 56 Head group

Claims

[1] Method for manufacturing an optoelectronic device wherein comprising an electrically conductive layer (14), a first electrode (20), and at least one first contact section (16) and at least one second contact section (18) formed over a support (12), an optically functional layer structure (22) is formed over the first electrode (20), a second electrode (23) is formed above the optically functional layer structure (22), wherein the first electrode (20) is electrically connected to the second contact section (18) and the second electrode (23) is electrically connected to the first contact section (16), a protective layer (40), which is designed as a self-organizing monolayer, is applied to at least a partial area of ​​the at least one first contact section (16) and / or the at least one second contact section (18), wherein the protective layer (40) consists of a material that is repellent to a substance for producing an encapsulation layer (24), and the encapsulation layer (24) is formed over the second electrode (23) and over the at least one first and the at least one second contact section (16, 18), wherein at least one partial area remains free of the encapsulation layer (24) due to the protective layer (40), wherein surfaces of the at least one first contact section (16) and of the at least one second contact section (18) facing away from the support (12) are completely covered by the encapsulation layer (24) and the protective layer (40) and / or an uppermost surface of the optoelectronic device is completely covered by the encapsulation layer (24) and the protective layer (40), wherein the carrier (12), the encapsulation layer (24) and the at least one first contact section (16) and / or the at least one second contact section (18) terminate flush against at least one side surface, wherein the encapsulation layer (24) comprises a stack of layers with a layer sequence of an ALD layer / buffer layer / ALD layer, wherein the buffer layer is formed from a polymer, wherein the buffer layer is applied exclusively to an optically active surface of the optically functional layer structure (22), and where the lateral side faces of the buffer layer are covered by the material of the ALD layers. [2] Method according to claim 1, wherein the material for producing the encapsulation layer (24) is a precursor. [3] Method according to claim 2, wherein the material of the protective layer (40) is repellent to at least two precursors. [4] Method according to one of claims 2 or 3, wherein the encapsulation layer (24) is formed by an ALD method or an MLD method. [5] Method according to one of the preceding claims, wherein the protective layer (40) is applied to the sub-area in a structured manner. [6] Method according to claim 5, wherein the materials of the protective layer (40) and the contact section (16, 18) are designed such that the material of the protective layer (40) adheres exclusively to the contact section (16, 18). [7] Optoelectronic component (10), with comprising an electrically conductive layer (14) comprising a first electrode (20) and at least one first contact section (16) and at least one second contact section (18) over a support (12), an optically functional layer structure (22) above the first electrode (20), a second electrode (23) above the optically functional layer structure (22), wherein the first electrode (20) is electrically connected to the second contact section (18) and the second electrode (23) is electrically connected to the first contact section (16), a protective layer (40), which is a self-organizing monolayer, on at least a sub-area of ​​the contact section (16, 18), wherein the protective layer (40) consists of a material that is repellent to a substance for producing an encapsulation layer (24), and the encapsulation layer (24) over the second electrode (23), wherein at least one partial area is free from the encapsulation layer (24), wherein surfaces of the at least one first contact section (16) and of the at least one second contact section (18) facing away from the support (12) are completely covered by the encapsulation layer (24) and the protective layer (40) and / or an uppermost surface of the optoelectronic device is completely covered by the encapsulation layer (24) and the protective layer (40), wherein the carrier (12), the encapsulation layer (24) and the at least one first contact section (16) and / or the at least one second contact section (18) terminate flush against at least one side surface, wherein the encapsulation layer (24) comprises a stack of layers with a layer sequence of an ALD layer / buffer layer / ALD layer, wherein the buffer layer is formed from a polymer, wherein the buffer layer is applied exclusively to an optically active surface of the optically functional layer structure (22), and where the lateral side faces of the buffer layer are covered by the material of the ALD layers. [8] Optoelectronic device (10) according to claim 7, wherein the material for producing the encapsulation layer (24) is a precursor required for producing the encapsulation layer (24). [9] Optoelectronic device (10) according to claim 8, wherein the material of the protective layer (40) is repellent to at least two precursors required for the production of the encapsulation layer (24). [10] Optoelectronic device (10) according to one of claims 7 or 8, wherein the encapsulation layer (24) is formed by an ALD process or an MLD process. [11] Optoelectronic component (10) according to one of claims 7 to 10, wherein the protective layer (40) is formed exclusively on the partial area. [12] Optoelectronic component (10) according to claim 11, wherein the materials of the protective layer (40) and the contact section (16, 18) are designed such that the material of the protective layer (40) adheres exclusively to the contact section (16, 18).

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