Pixel structure, method of manufacturing the same and display panel

Abstract

A pixel structure that has the following characteristics: a substrate (1), an anode layer (2) on a surface of the substrate (1); a first additional light-emitting layer (3) on a surface of the anode layer (2), wherein the anode layer (2) is completely covered by the first additional light-emitting layer (3) which is continuous, wherein the additional light-emitting layer (3) is designed to transport holes; a light-emitting layer (4) on a surface of the first additional light-emitting layer (3), wherein the light-emitting layer (4) has at least a first light-emitting section (41) and a second light-emitting section (42), the first light-emitting section (41) corresponds to a first sub-pixel, the second light-emitting section (42) corresponds to a second sub-pixel, and a turn-on voltage of the first sub-pixel is greater than a turn-on voltage of the second sub-pixel, wherein a turn-on voltage is a voltage at which a pixel starts to be displayed; a cathode layer (5) on a surface of the light-emitting layer (4), wherein the light-emitting layer (4) is covered by the cathode layer (5); and at least one first resistive structure (6) in a space between the first additional light-emitting layer (3) and the cathode layer (5), wherein the at least one first resistive structure (6) is arranged in a direction perpendicular to the second light-emitting section (42), at least partially overlaps with the second light-emitting section (42) and does not overlap with the first light-emitting section (41), and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure (6) and the second light-emitting section (42) and a resistance value of the first light-emitting section (41) is smaller than a first predetermined value, wherein the first predetermined value is smaller than or equal to a difference between the resistance value of the second light-emitting section (42) and the resistance value of the first light-emitting section (41).

Description

Area

[0001] The present disclosure relates to the field of display technology, and more particularly to a pixel structure, a method of manufacturing the pixel structure, and a display panel including the pixel structure. background

[0002] Currently, an OLED (Organic Light-Emitting Diode) display device generally includes multiple sub-pixels, and the illumination colors of adjacent sub-pixels are different. For example, a prior art OLED display device includes multiple red sub-pixels, green sub-pixels, and blue sub-pixels regularly arranged to realize the display of different colors.

[0003] As in Fig. 1, a prior art OLED display device generally includes the following features: a substrate 01; an anode layer 02 on a surface of the substrate 01, the anode layer 02 consisting of a plurality of anode sections; an additional light-emitting layer arranged on a surface of the anode layer 02 and covering the anode layer 02 and the substrate 01; a light-emitting layer 04 on a surface of the additional light-emitting layer 03, the light-emitting layer comprising a red light-emitting section 041, a green light-emitting section 042, and a blue light-emitting section 043, the light-emitting sections having a one-to-one correspondence with the anode sections, and the light-emitting sections of different colors correspond to subpixels of different colors to implement the display of different colors;and a cathode layer 05 on a surface of the light-emitting layer 04.;

[0004] Furthermore, document DE10308515 B4 relates to an organic light-emitting diode comprising a substrate produced by applying a first conductive electrode layer, applying one or more resistive layers with structure(s), applying one or more electroluminescent layers containing an organic electroluminescent material, and applying a second conductive electrode layer. A surface of the structure, particularly in its edge region, forms an angle that remains less than 90 degrees with respect to a surface of the substrate.

[0005] However, there is a color crosstalk phenomenon when the above OLED display devices display a pure color, that is, when the OLED display devices display a pure red image, not only red but also a color of a sub-pixel adjacent to the red sub-pixel, such as green or blue, appears in the display image, which reduces a display quality of the OLED display devices. Brief description

[0006] To solve the above-mentioned technical problem, a pixel structure, a method of manufacturing the pixel structure, and a display panel including the pixel structure are provided according to embodiments of the present disclosure to reduce the color crosstalk phenomenon for the display panel when displaying and to improve a display quality of the display panel.

[0007] To solve the above problem, the following technical solutions are provided according to the embodiments of the present disclosure.

[0008] A pixel structure is provided which includes the following features: a substrate; an anode layer on a surface of the substrate; a first additional light-emitting layer on a surface of the anode layer, wherein the anode layer is completely covered by the first additional light-emitting layer which is continuous, wherein the additional light-emitting layer (3) is formed to transport holes; a light-emitting layer on a surface of the first additional light-emitting layer, wherein the light-emitting layer comprises at least a first light-emitting portion and a second light-emitting portion, the first light-emitting portion corresponds to a first sub-pixel, the second light-emitting portion corresponds to a second sub-pixel, and a turn-on voltage of the first sub-pixel is greater than that of the second sub-pixel, wherein a turn-on voltage is a voltage at which a pixel starts to be displayed; a cathode layer on a surface of the light-emitting layer, the light-emitting layer being covered by the cathode layer; and at least one first resistive structure in a space between the first additional light-emitting layer and the cathode layer, wherein the at least one first resistive structure is arranged in a direction perpendicular to the second light-emitting section, at least partially overlaps with the second light-emitting section and does not overlap with the first light-emitting section, and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure and the second light-emitting section and a resistance value of the first light-emitting section is smaller than a first predetermined value, wherein the first predetermined value is smaller than or equal to a difference between the resistance value of the second light-emitting section (42) and the resistance value of the first light-emitting section (41).

[0009] A method of manufacturing a pixel structure is provided which is applied to the above pixel structure, and the method comprises the following steps: Providing a substrate; Forming an anode layer on a surface of the substrate; Forming a first additional light-emitting layer on a surface of the anode layer, wherein the anode layer is completely covered by the first additional light-emitting layer which is continuous, wherein the additional light-emitting layer is configured to transport holes; Forming a light-emitting layer and at least one first resistive structure on a surface of the first additional light-emitting layer, wherein the light-emitting layer comprises at least a first light-emitting section corresponding to a first sub-pixel and a second light-emitting section corresponding to a second sub-pixel, a turn-on voltage of the first sub-pixel is greater than that of the second sub-pixel, the at least one first resistive structure is arranged in a direction perpendicular to the second light-emitting section, at least partially overlaps with the second light-emitting section and does not overlap with the first light-emitting section,and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure and the second light-emitting section and a resistance value of the first light-emitting section is smaller than a first predetermined value, wherein the first predetermined value is smaller than or equal to a difference between the resistance value of the second light-emitting section (42) and the resistance value of the first light-emitting section (41); and, Forming a cathode layer on a side of the light-emitting layer facing away from the first additional light-emitting layer, wherein the light-emitting layer and the at least one first resistive structure are covered by the cathode layer.

[0010] A display panel comprising the pixel structure described above is provided.

[0011] Compared to the state of the art, the technical solutions described above have the following advantages.

[0012] The pixel structure according to the embodiments of the present disclosure includes a substrate, an anode layer, a first additional light-emitting layer, a light-emitting layer, and a cathode layer, and further includes at least a first resistive structure. The light-emitting layer includes at least a first light-emitting portion and a second light-emitting portion, wherein the first light-emitting portion corresponds to a first sub-pixel, the second light-emitting portion corresponds to a second sub-pixel, and a turn-on voltage of the first sub-pixel is greater than that of the second sub-pixel, wherein a turn-on voltage is a voltage at which a pixel starts to be displayed.The at least one first resistive structure is arranged in a space between the first additional light-emitting layer and the cathode layer and arranged in a direction perpendicular to the second light-emitting section, at least partially overlaps with the second light-emitting section and does not overlap with the first light-emitting section, and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure and the second light-emitting section and a resistance value of the first light-emitting section is smaller than a first predetermined value, thereby increasing the turn-on voltage of the second sub-pixel.In this case, when the first sub-pixel is displayed and the second sub-pixel is not displayed, although holes in a region of the first additional light-emitting layer below the first light-emitting portion are transported to a region of the first additional light-emitting layer below the second light-emitting portion through the first additional light-emitting layer, a voltage difference is formed between two ends of the second light-emitting portion, but the voltage difference is smaller than the turn-on voltage of the second sub-pixel to ensure that the second sub-pixel is not displayed when the first sub-pixel is displayed, thereby reducing the color crosstalk phenomenon of the display panel when displaying and improving a display quality of the display panel. Short description of the drawings

[0013] The drawings to be used in the descriptions of the embodiments or the prior art are briefly described below so that the technical solutions according to the embodiments of the disclosure or according to the prior art become more understandable. It is obvious that the drawings in the following descriptions illustrate only some embodiments of the disclosure. Other drawings can be derived based on these drawings by those skilled in the art without any creative activity. Fig. 1 is a schematic structural diagram of a prior art display device; Fig. 2 is a schematic diagram of current-voltage curves of a red subpixel, a blue subpixel, and a green subpixel in a prior art display device; Fig. 3 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 4 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 5 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 6 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 7 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 8 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 9 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 10 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 11 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 12 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 13 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 14 is a plan view of the arrangement of light-emitting portions in a pixel structure according to an embodiment of the disclosure; Fig. 15 is a plan view of the arrangement of light-emitting portions in a pixel structure according to an embodiment of the disclosure; Fig. 16 is a plan view of the arrangement of light-emitting portions in a pixel structure according to an embodiment of the disclosure; Fig. 17 is a schematic structural diagram of a pixel structure according to an embodiment of the disclosure; Fig. 18 is a flowchart of a method of manufacturing a pixel structure according to an embodiment of the disclosure; Fig. 19 is a flowchart of step 4 of a method for manufacturing a pixel structure according to an embodiment of the disclosure; and Fig. 20 is a schematic structural diagram of a display plane according to an embodiment of the disclosure. Detailed description

[0014] As described in the background, a color crosstalk phenomenon occurs when a prior art OLED display device displays a pure color, that is, when the OLED display device displays a pure red image, not only red but also a color of a sub-pixel adjacent to the red sub-pixel, such as green or blue, appears in the display image, which reduces a display quality of the OLED display device.

[0015] The inventor has found through research that this is because the additional light-emitting layer 03 corresponding to the light-emitting portions of the light-emitting layer is an integrated additional light-emitting layer. When the red sub-pixel is displayed and the green sub-pixel is not displayed, holes in a region of the additional light-emitting layer 03 below the red light-emitting portion 041 are transported to a region of the additional light-emitting layer 03 below the green light-emitting portion 042 through the additional light-emitting layer 03, forming a voltage difference between two ends of the green light-emitting portion. As shown in Fig. 2, curve a is a current-voltage curve of the red subpixel, curve b is a current-voltage curve of the green subpixel, and curve c is a current-voltage curve of the blue subpixel. As shown in Fig. 2, a turn-on voltage of the green sub-pixel corresponding to the green light-emitting portion 042 is smaller than a turn-on voltage of the red sub-pixel corresponding to the red light-emitting portion 041. In this case, when the red sub-pixel is displayed and the green sub-pixel is not displayed, holes in a region under the red light-emitting portion 041 are transported to a region under the green light-emitting portion 042 through the additional light-emitting layer 03, which causes a voltage difference between the region of the additional light-emitting layer under the green light-emitting portion 042 and a cathode above the green light-emitting portion 042 to be larger than the turn-on voltage of the green sub-pixel.Therefore, the green subpixel is also displayed, the green subpixel may even be displayed before the red subpixel is displayed, resulting in a color crosstalk phenomenon.

[0016] In view of the above, a pixel structure and a display panel including the pixel structure are provided according to embodiments of the present disclosure. The pixel structure includes a substrate, an anode layer, a first additional light-emitting layer, a light-emitting layer, and a cathode layer, and further includes at least one first resistive structure. The light-emitting layer includes at least a first light-emitting portion and a second light-emitting portion, and the at least one first resistive structure is disposed in a space between the first additional light-emitting layer and the cathode layer and arranged in a direction perpendicular to the second light-emitting portion, thereby increasing a turn-on voltage of the second sub-pixel.In this case, it is ensured that the second sub-pixel is not displayed, thereby reducing the color crosstalk phenomenon of the display panel when displaying and improving a display quality of the display panel.

[0017] The technical solutions according to the embodiments of the present disclosure will be described clearly and completely below in conjunction with the drawings. It is obvious that the described embodiments are only some and not all of the embodiments according to the present disclosure. All other embodiments derived by those skilled in the art based on the embodiments of the present disclosure without creative effort fall within the scope of the present disclosure.

[0018] The following descriptions include details to facilitate understanding of the disclosure; however, the disclosure may be implemented in other ways than those described herein. Those skilled in the art may make additions without departing from the spirit of the disclosure, and thus, the disclosure is not limited to the specific embodiments disclosed below.

[0019] According to one embodiment of the disclosure, a pixel structure is provided. As shown in Fig. As shown in Figure 3, the pixel structure includes the following features: a substrate 1 ; an anode layer 2 on a surface of the substrate; a first additional light-emitting layer 3 on a surface of the anode layer 2, wherein the anode layer 2 is completely covered by the first additional light-emitting layer 3, which is continuous; a light-emitting layer 4 on a surface of the first additional light-emitting layer 3, wherein the light-emitting layer 4 comprises at least a first light-emitting portion 41 and a second light-emitting portion 42, the first light-emitting portion 41 corresponds to a first sub-pixel, the second light-emitting portion 42 corresponds to a second sub-pixel, and a turn-on voltage of the first sub-pixel is greater than that of the second sub-pixel; a cathode layer 5 on a surface of the light-emitting layer 4, wherein the light-emitting layer 4 is covered by the cathode layer 5; and at least one first resistive structure 6 in a space between the first additional light-emitting layer 3 and the cathode layer 5, wherein the first resistive structure is arranged in a direction perpendicular to the second light-emitting section 42, at least partially overlaps with the second light-emitting section 42 and does not overlap with the first light-emitting section 41, and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure 6 and the second light-emitting section 42 and a resistance value of the first light-emitting section 41 is smaller than a first predetermined value.

[0020] It should be noted that the first additional light-emitting layer 3 in the embodiment of the disclosure is a hole transport layer, a hole injection layer, or a buffer layer, which is not limited in the disclosure as long as the first additional light-emitting layer 3 can transport holes.

[0021] As apparent from the above, the at least one first resistive structure 6 is added to the second sub-pixel in the pixel structure according to the embodiment of the disclosure to increase a resistance value of the second sub-pixel, thereby increasing the turn-on voltage of the second sub-pixel.In this case, when the first sub-pixel is displayed and the second sub-pixel is not displayed, although holes in a region of the first additional light-emitting layer 3 under the first light-emitting portion 41 are transported to a region of the first additional light-emitting layer 3 under the second light-emitting portion 42, a voltage difference is formed between two ends of the second light-emitting portion 42, but the voltage difference is smaller than the turn-on voltage of the second sub-pixel to ensure that the second sub-pixel is not displayed, thereby reducing the color crosstalk phenomenon between the first sub-pixel and the second sub-pixel when the display panel displays an image and improving a display quality of the display panel.

[0022] Based on the above embodiment, in one embodiment of the disclosure, an orthogonal protrusion of the at least one first resistive structure 6 on the substrate 1 is completely covered by an orthogonal protrusion of the second light-emitting portion 42 on the substrate 1, as shown in Fig. 4. In another embodiment of the disclosure, an orthogonal protrusion of the second light-emitting portion 42 on the substrate 1 is completely covered by an orthogonal protrusion of the at least one first resistive structure 6 on the substrate 1. Preferably, an orthogonal protrusion of the at least one first resistive structure 6 on the substrate 1 exactly overlaps with an orthogonal protrusion of the second light-emitting portion 42 on the substrate 1, as shown in Fig. 3, which is not limited in the disclosure as long as the at least one first resistive structure 6 is arranged in a direction perpendicular to the second light-emitting section 42, at least partially overlaps with the second light-emitting section 42 and does not overlap with the first light-emitting section 41.

[0023] Based on one of the above embodiments, in one embodiment of the disclosure, the at least one first resistive structure 6 is arranged between the first additional light-emitting layer 3 and the light-emitting layer 4, as shown in Fig. 1 to 5. In another embodiment of the disclosure, the at least one first resistive structure 6 is arranged between the light-emitting layer 4 and the cathode layer 5, as shown in Fig. 6, which is not limited in the disclosure as long as the at least one first resistive structure 6 is arranged in the space between the first additional light-emitting layer 3 and the cathode layer 5.

[0024] Based on the above embodiments, a second additional light-emitting layer 7 is arranged between the cathode layer 5 and the light-emitting layer 4 in one embodiment of the disclosure, as shown in Fig. 7. In the exemplary embodiment, in a case where the at least one first resistive structure 6 is arranged between the light-emitting layer 4 and the cathode layer 5, the at least one first resistive structure 6 can be arranged between the light-emitting layer 4 and the second additional light-emitting layer 7, depending on the application, which in Fig. 7, or may be arranged between the second additional light-emitting layer 7 and the cathode layer 5, as shown in Fig. 8, which is not limited in the disclosure.

[0025] It should be noted that the second additional light-emitting layer 7 in the above embodiment may consist of a single-layer structure or a multi-layer stack structure. In a case where the second additional light-emitting layer 7 consists of the multi-layer stack structure, ie, the second additional light-emitting layer 7 comprises a plurality of stacked second additional light-emitting sub-layers, the at least one first resistive structure 6 may be arranged between any two adjacent second additional light-emitting sub-layers, as shown in Fig. 9 is shown.

[0026] Based on one of the above embodiments, at least one third additional light-emitting layer 8 is arranged between the first additional light-emitting layer 3 and the light-emitting layer 4 in one embodiment of the disclosure. At least one of the at least one third additional light-emitting layer 8 comprises a plurality of non-continuous additional light-emitting sections, the first light-emitting section 41 is covered by a part of the plurality of additional light-emitting sections, and the second light-emitting section 42 is covered by a part of the plurality of additional light-emitting sections. It should be noted that the third additional light-emitting layer in the embodiment of the disclosure may be a hole-transport layer, a hole-injection layer, or a buffer layer depending on the application, which is not limited in the disclosure.

[0027] Based on the above embodiment, in one embodiment of the disclosure, in a case where the at least one first resistive structure 6 is arranged between the first additional light-emitting layer 3 and the light-emitting layer 4, the at least one first resistive structure 6 may be arranged between the first additional light-emitting layer 3 and the at least one third additional light-emitting layer 8, depending on the application, as shown in Fig. 11, or may be arranged between the at least one third additional light-emitting layer 8 and the light-emitting layer 4, as shown in Fig. 12, which is not limited in the disclosure.

[0028] Based on the above embodiment, in one embodiment of the disclosure, a plurality of third additional light-emitting layers 8 are arranged between the first additional light-emitting layer 3 and the light-emitting layer 4. In the embodiment, the at least one first resistive structure 6 can be arranged between any two adjacent third additional light-emitting layers 8, depending on the application, which is not limited in the disclosure.

[0029] It should be noted that, based on one of the above embodiments, the pixel structure in one embodiment of the disclosure may comprise a plurality of first resistive structures 6; in a case where the pixel structure comprises a plurality of first resistive structures 6, different first resistive structures 6 may be arranged between two completely identical layers or arranged between two incompletely identical layers, depending on the application, which is not limited in the disclosure.

[0030] Based on one of the above embodiments, in a preferred embodiment of the disclosure, the first predetermined value is less than or equal to a difference between the resistance value of the second light-emitting section 42 and the resistance value of the first light-emitting section 41. Preferably, the first predetermined value is equal to a difference between the resistance value of the second light-emitting section 42 and the resistance value of the first light-emitting section 41, in which case the turn-on voltage of the first sub-pixel is equal to the turn-on voltage of the second sub-pixel in order to maximally reduce the color crosstalk phenomenon of the pixel structure during operation and to improve a display quality of the pixel structure.

[0031] Based on one of the above embodiments, the at least one first resistive structure 6 in one embodiment of the disclosure may be made of an organic conductive material or an inorganic conductive material, which is not limited in the disclosure, as long as the material is a conductive material and has a certain resistance value. In a case where the at least one first resistive structure 6 is made of an inorganic conductive material, the inorganic material may be selected from a group consisting of aluminum, silver, molybdenum, or corresponding oxides, such as aluminum oxide, silver oxide, or molybdenum oxide, depending on the application, which is not limited in the disclosure.

[0032] Based on the above embodiment, in one embodiment of the disclosure, the at least one resistive structure 6 has a thickness in a range from 5 nm to 30 nm inclusive, which is not limited in the disclosure and depends on a specific resistance value of the at least one first resistive structure 6.

[0033] Based on one of the above embodiments, in one embodiment of the disclosure, the first light-emitting portion 41 is a red light-emitting portion, and the second light-emitting portion 42 is a green light-emitting portion. In another embodiment of the disclosure, the first light-emitting portion 41 is a blue light-emitting portion, and the second light-emitting portion 42 is a green light-emitting portion. In other embodiments of the disclosure, the first light-emitting portion 41 and the second light-emitting portion 42 may be light-emitting portions of other colors, which is not limited in the disclosure, as long as a turn-on voltage of a sub-pixel corresponding to the first light-emitting portion 41 is greater than that of a sub-pixel corresponding to the second light-emitting portion 42.

[0034] Based on one of the above embodiments, in one embodiment of the disclosure, the light-emitting layer 4 further comprises a third light-emitting portion 43, the third light-emitting portion 43 corresponds to a third sub-pixel, and a turn-on voltage of the third sub-pixel is larger than that of the second sub-pixel and is not larger than the turn-on voltage of the first sub-pixel.

[0035] Based on the above embodiment, the pixel structure in one embodiment of the disclosure includes a plurality of first light-emitting sections, a plurality of second light-emitting sections, and a plurality of third light-emitting sections. The plurality of first light-emitting sections, the plurality of second light-emitting sections, and the plurality of third light-emitting sections are regularly arranged along a predetermined direction. It should be noted that the predetermined direction in the embodiment of the disclosure may be a row direction depending on the application, as shown in Fig. 14, can be a column direction, as shown in Fig. 15, or may include both a row direction and a column direction, as shown in Fig. 16, which is not limited in the disclosure.

[0036] Based on the above embodiment, in one embodiment of the disclosure, a turn-on voltage of the third sub-pixel is lower than that of the first sub-pixel. In the embodiment, in a case where the first sub-pixel corresponding to the first light-emitting portion and the third sub-pixel corresponding to the third light-emitting portion are adjacent, a color crosstalk phenomenon may occur between the first sub-pixel and the third sub-pixel.

[0037] Based on the above embodiment, the pixel structure in a preferred embodiment of the disclosure comprises, as shown in Fig. 17, thus further comprising the following features: at least one second resistive structure 9 in the space between the first additional light-emitting layer 3 and the cathode layer 5, the second resistive structure 9 is arranged in a direction perpendicular to the third light-emitting section 43, overlaps at least partially with the third light-emitting section 43 and does not overlap with the first light-emitting section 41 or the second light-emitting section 42, and an absolute value of a difference between a sum of resistance values of the third light-emitting section 43 and the at least one second resistive structure 9 and the resistance of the first light-emitting section 41 is smaller than a second predetermined value.

[0038] The at least one second resistive structure 9 is added to the third sub-pixel in the pixel structure according to the embodiment of the disclosure to increase a resistance value of the third sub-pixel, thereby increasing the turn-on voltage of the third sub-pixel.In this case, when the first sub-pixel is displayed and the third sub-pixel is not displayed, although holes in a region of the first additional light-emitting layer 3 under the first light-emitting section 41 are transported to a region of the first additional light-emitting layer 3 under the third light-emitting section 43, a voltage difference is formed between two ends of the third light-emitting section 43, but the voltage difference is smaller than the turn-on voltage of the third sub-pixel to ensure that the third sub-pixel is not displayed, thereby reducing the color crosstalk phenomenon between the first sub-pixel and the third sub-pixel when the display panel displays an image and improving a display quality of the display panel.

[0039] Based on the above embodiment, in one embodiment of the disclosure, the second predetermined value is less than or equal to a difference between the resistance value of the third light-emitting portion 43 and that of the first light-emitting portion 41.

[0040] Preferably, the second predetermined value is equal to a difference between the resistance value of the third light-emitting section 43 and the resistance value of the first light-emitting section 41, in which case the turn-on voltage of the first sub-pixel is equal to the turn-on voltage of the third sub-pixel in order to maximally reduce the color crosstalk phenomenon between the first sub-pixel and the third sub-pixel of the pixel structure during operation and to improve a display quality of the pixel structure.

[0041] Similarly, in a case where the second sub-pixel corresponding to the second light-emitting portion and the third sub-pixel corresponding to the third light-emitting portion are adjacent, a color crosstalk phenomenon may occur between the second sub-pixel and the third sub-pixel. Based on the above embodiment, in one embodiment of the disclosure, a sum of resistance values of the second light-emitting portion and the at least one first resistive structure is smaller than a resistance value of the first light-emitting portion, and a sum of resistance values of the third light-emitting portion and the at least one second resistive structure is smaller than the resistance value of the first light-emitting portion;in this case, a difference between the turn-on voltage of the second sub-pixel and the turn-on voltage of the third sub-pixel is reduced, while a difference between the turn-on voltage of the first sub-pixel and the turn-on voltage of the second sub-pixel and a difference between the turn-on voltage of the first sub-pixel and the turn-on voltage of the third sub-pixel are reduced, thereby reducing the color crosstalk phenomenon between the second sub-pixel and the third sub-pixel that are adjacent when the display panel displays an image, and improving a display quality of the display panel.;

[0042] Based on the above embodiment, in one embodiment of the disclosure, the first predetermined value is equal to the difference between the resistance value of the second light-emitting section 42 and the resistance value of the first light-emitting section 41, and the second predetermined value is equal to the difference between the resistance value of the third light-emitting section 43 and the resistance value of the first light-emitting section 41;in this case, the turn-on voltage of the first sub-pixel is equal to the turn-on voltage of the second sub-pixel and the turn-on voltage of the first sub-pixel is equal to the turn-on voltage of the third sub-pixel, that is, the turn-on voltages of the first sub-pixel, the second sub-pixel and the third sub-pixel are equal or substantially equal, thereby maximally reducing the color crosstalk phenomenon between adjacent sub-pixels of the pixel structure during operation and improving a display quality of the pixel structure.;

[0043] Based on the above embodiment, in one embodiment of the disclosure, an orthogonal protrusion of the at least one second resistive structure 9 on the substrate 1 is completely covered by an orthogonal protrusion of the third light-emitting portion 43 on the substrate 1. In another embodiment of the disclosure, an orthogonal protrusion of the third light-emitting portion 43 on the substrate 1 is completely covered by an orthogonal protrusion of the at least one second resistive structure 9 on the substrate 1.Preferably, an orthogonal protrusion of the at least one second resistive structure 9 on the substrate 1 exactly overlaps with an orthogonal protrusion of the third light-emitting section 43 on the substrate 1, which is not limited in the disclosure as long as the at least one second resistive structure 9 is arranged in a direction perpendicular to the third light-emitting section 43, at least partially overlaps with the third light-emitting section 43 and does not overlap with the first light-emitting section 41 or the second light-emitting section 42.

[0044] Based on one of the above embodiments, in one embodiment of the disclosure, the at least one second resistive structure 9 is arranged between the first additional light-emitting layer 3 and the light-emitting layer 4. In another embodiment of the disclosure, the at least one second resistive structure 9 is arranged between the light-emitting layer 4 and the cathode layer 5, which is not limited in the disclosure, as long as the at least one second resistive structure 9 is arranged in the space between the first additional light-emitting layer 3 and the cathode layer 5.

[0045] Based on the above embodiment, in one embodiment of the disclosure, in a case where a second additional light-emitting layer 7 is arranged between the cathode layer 5 and the light-emitting layer 4 and the at least one second resistive structure 9 is arranged between the light-emitting layer 4 and the cathode layer 5, the at least one second resistive structure 9 may be arranged between the light-emitting layer 4 and the second additional light-emitting layer 7, or may be arranged between the second additional light-emitting layer 7 and the cathode layer 5, depending on the application, which is not limited in the disclosure.

[0046] It should be noted that the second additional light-emitting layer 7 in the above embodiment may consist of a single-layer structure or a multi-layer stack structure. In a case where the second additional light-emitting layer 7 consists of the multi-layer stack structure, ie, the second additional light-emitting layer 7 comprises a plurality of stacked second additional light-emitting sub-layers, the at least one second resistive structure 9 may be arranged between any two adjacent second additional light-emitting sub-layers.

[0047] Based on one of the above embodiments, in one embodiment of the disclosure, at least one third additional light-emitting layer 8 is arranged between the first additional light-emitting layer 3 and the light-emitting layer 4. At least one of the at least one third additional light-emitting layer 8 comprises a plurality of non-continuous additional light-emitting sections, the first light-emitting section 41 is covered by a part of the plurality of additional light-emitting sections, the second light-emitting section 42 is covered by a part of the plurality of additional light-emitting sections, and the third light-emitting section 43 is covered by a part of the plurality of additional light-emitting sections.

[0048] Based on the above embodiment, in one embodiment of the disclosure, in a case that the at least one second resistive structure 9 is arranged between the first additional light-emitting layer 3 and the light-emitting layer 4, the at least one second resistive structure 9 may be arranged between the first additional light-emitting layer 3 and the at least one third additional light-emitting layer 8, depending on the application, or may be arranged between the at least one third additional light-emitting layer 8 and the light-emitting layer 4, which is not limited in the disclosure.

[0049] Based on the above embodiment, in one embodiment of the disclosure, a plurality of third additional light-emitting layers 8 are arranged between the first additional light-emitting layer 3 and the light-emitting layer 4.

[0050] In the exemplary embodiment, the at least one second resistive structure 9 can be arranged between any two adjacent third additional light-emitting layers 8, depending on the application, which is not limited in the disclosure.

[0051] It should be noted that, based on one of the above embodiments, the pixel structure in one embodiment of the disclosure may comprise a plurality of second resistive structures 9; in a case where the pixel structure comprises a plurality of second resistive structures 9, different second resistive structures 9 may be arranged between two completely identical layers or arranged between two incompletely identical layers, depending on the application, which is not limited in the disclosure.

[0052] It should also be noted that the at least one second resistive structure 9 and the at least one first resistive structure 6 in one of the above embodiments may be arranged between two completely identical layers or between two incompletely identical layers, which is not limited in the disclosure.

[0053] Based on one of the above embodiments, the at least one second resistive structure 9 in one embodiment of the disclosure may be made of an organic conductive material or an inorganic conductive material, which is not limited in the disclosure, as long as the material is a conductive material and has a certain resistance value. In a case where the at least one second resistive structure 9 is made of an inorganic conductive material, the inorganic material may be selected from a group consisting of aluminum, silver, molybdenum, or corresponding oxides, such as aluminum oxide, silver oxide, or molybdenum oxide, depending on the application, which is not limited in the disclosure.

[0054] Based on one of the above embodiments, in one embodiment of the disclosure, the first light-emitting section 41 is a red light-emitting section, the second light-emitting section 42 is a green light-emitting section, and the third light-emitting section 43 is a blue light-emitting section, which is not limited in the disclosure.

[0055] Note that, in one of the above embodiments, the pixel structure according to the embodiments of the disclosure is described using an example in which the pixel structure includes three sub-pixels of the first sub-pixel, the second sub-pixel, and the third sub-pixel in the present disclosure, which is not limited in the disclosure. In other embodiments of the disclosure, the pixel structure may further include other sub-pixels as needed, and accordingly, the pixel structure may further include light-emitting portions corresponding to the other sub-pixels depending on the application.

[0056] Accordingly, a display panel 2000 as shown in Fig. 20 is provided according to an embodiment of the present disclosure, and the display panel 2000 includes the pixel structure according to any of the above embodiments.

[0057] In summary, in the pixel structure and the display panel according to the embodiments of the present disclosure, at least one first resistive structure 6 is disposed in the gap between the first additional light-emitting layer 3 and the cathode layer 5 and arranged in the direction perpendicular to the second light-emitting portion 42 to adjust the resistance value of the second sub-pixel corresponding to the second light-emitting portion 42 by the at least one first resistive structure 6, thereby increasing the turn-on voltage of the second sub-pixel. In this case, the turn-on voltages of the second sub-pixel and the first sub-pixel are substantially equal to reduce the color crosstalk phenomenon between the first sub-pixel and the second sub-pixel when the display panel displays an image and to improve the display quality of the display panel.

[0058] Furthermore, in a case where the pixel structure and the display panel including the pixel structure include a third light-emitting portion 43 and the turn-on voltage of the third sub-pixel corresponding to the third light-emitting portion 43 is different from the turn-on voltage of the sub-pixel corresponding to the first light-emitting portion 41, at least one second resistive structure 9 may be arranged in the space between the first additional light-emitting layer 3 and the cathode layer 5 and arranged in the direction perpendicular to the third light-emitting portion 43 to adjust the resistance value of the third sub-pixel corresponding to the third light-emitting portion 43 by the at least one second resistive structure 9, thereby increasing the turn-on voltage of the third sub-pixel.In this case, the turn-on voltages of the third sub-pixel and the first sub-pixel are substantially the same in order to reduce the color crosstalk phenomenon between the first sub-pixel and the third sub-pixel when the display panel displays an image and to increase the display quality of the display panel.

[0059] Furthermore, in the pixel structure and the display panel including the pixel structure according to the embodiments of the present disclosure, the resistances of the at least one first resistive structure 6 and the at least one second resistive structure 9 can be adjusted to substantially equalize the turn-on voltages of the first sub-pixel, the second sub-pixel, and the third sub-pixel, thereby reducing the color crosstalk phenomenon between any two adjacent sub-pixels of the first sub-pixel, the second sub-pixel, and the third sub-pixel, and maximally improving the display quality of the display panel.

[0060] Furthermore, a method for manufacturing a pixel structure according to an embodiment of the disclosure is provided, which is applied to the pixel structure according to one of the above embodiments. As in Fig. 18, the method comprises the following steps: S1, providing a substrate; S2, forming an anode layer on a surface of the substrate; S3, forming a first additional light-emitting layer on a surface of the anode layer, wherein the anode layer is completely covered by the first additional light-emitting layer which is continuous; S4, forming a light-emitting layer and at least one first resistive structure on a surface of the first additional layer, wherein the light-emitting layer comprises at least a first light-emitting section corresponding to a first sub-pixel and a second light-emitting section corresponding to a second sub-pixel, a turn-on voltage of the first sub-pixel is greater than that of the second sub-pixel, the at least one first resistive structure is arranged in a direction perpendicular to the second light-emitting section, at least partially overlaps with the second light-emitting section and does not overlap with the first light-emitting section,and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure and the second light-emitting section and a resistance value of the first light-emitting section is smaller than a first predetermined value; and, S5, forming a cathode layer on a side of the light-emitting layer facing away from the first additional light-emitting layer, wherein the light-emitting layer and the at least one first resistive structure are covered by the cathode layer.

[0061] Based on the above embodiment, forming a light-emitting layer and at least one first resistive structure on a surface of the first additional layer, wherein the light-emitting layer comprises at least a first light-emitting portion corresponding to a first sub-pixel and a second light-emitting portion corresponding to a second sub-pixel, as in Fig. 19, in one embodiment of the disclosure, the following steps: S41, providing a first mask on the surface of the first additional light-emitting layer; S42, forming the first light-emitting portion on a part of the surface of the first additional light-emitting layer, with the first mask as a mask; S43, removing the first mask and providing a second mask on surfaces of the first light-emitting portion and the first additional light-emitting layer; and S44, forming the second light-emitting portion and the at least one first resistive pattern overlapping on a part of the surface of the first additional light-emitting layer with the second mask as a mask.

[0062] As apparent from the above, in the embodiment of the disclosure, a mask is used to form the second light-emitting portion and the at least one first resistive pattern, thereby simplifying the process for manufacturing the pixel pattern and improving the efficiency of manufacturing the pixel pattern. Note that, in the case where a mask is used to form the second light-emitting portion and the at least one first resistive pattern, a process for forming the at least one first resistive pattern may preferably be an evaporation process, an inkjet process, or a coating process depending on the application, which is not limited in the disclosure.

[0063] Based on the above embodiment, forming the second light-emitting portion and the at least one first resistive structure overlapping on a part of the surface of the first additional light-emitting layer with the second mask as a mask in one embodiment of the disclosure comprises sequentially forming the second light-emitting portion and the at least one first resistive structure on a part of the surface of the first additional light-emitting layer with the second mask as a mask, that is, the at least one first resistive structure is arranged between the second light-emitting portion and the cathode layer.In another embodiment of the disclosure, forming the second light-emitting portion and the at least one first resistive structure overlapping on a part of the surface of the first additional light-emitting layer with the second mask as a mask includes, depending on the application, sequentially forming the at least one first resistive structure and the second light-emitting portion on a part of the surface of the first additional light-emitting layer with the second mask as a mask, that is, the at least one first resistive structure is arranged between the first additional light-emitting layer and the second light-emitting portion, which is not limited in the disclosure.

[0064] Based on one of the above embodiments, in one embodiment of the disclosure, in a case where the pixel structure comprises a third light-emitting section, the method further comprises the following steps: forming the third light-emitting section and at least one second resistive structure on a surface of the first additional light-emitting layer facing the first light-emitting section, wherein the at least one second resistive structure is arranged in a direction perpendicular to the third light-emitting section, at least partially overlaps with the third light-emitting section, and does not overlap with the first light-emitting section or the second light-emitting section,and an absolute value of a difference between a sum of resistance values of the third light-emitting section and the at least one second resistive structure and the resistance value of the first light-emitting section is smaller than a second predetermined value.,

[0065] Note that in the above embodiment, a mask may be used to form the at least one second resistive structure and the third light-emitting portion to further simplify the process for manufacturing the pixel structure and improve the efficiency of manufacturing the pixel structure. In a case where a mask is used to form the third light-emitting portion and the at least one second resistive structure, the at least one second resistive structure may preferably be formed by an evaporation process, an inkjet process, or a coating process depending on the application, which is not limited in the disclosure.

[0066] It should also be noted that in the above embodiment, the at least one second resistive structure may be arranged between the third light-emitting section and the cathode layer, depending on the application, or may be arranged between the first additional light-emitting layer and the third light-emitting section, which is not limited in the disclosure.

[0067] Based on one of the above embodiments, the pixel structure in a method according to an embodiment of the disclosure is not limited to comprising only three light-emitting sections of the first light-emitting section, the second light-emitting section, and the third light-emitting section. In other embodiments of the disclosure, the pixel structure may comprise other light-emitting sections depending on the application, which is not limited in the disclosure.

[0068] As apparent from the above, in the pixel structure manufactured by the method according to the embodiment of the disclosure, at least one first resistive structure is disposed in the gap between the first additional light-emitting layer and the cathode layer and arranged in the direction perpendicular to the second light-emitting portion to adjust the resistance value of the second sub-pixel corresponding to the second light-emitting portion by the at least one first resistive structure, thereby increasing the turn-on voltage of the second sub-pixel. In this case, the turn-on voltages of the second sub-pixel and the first sub-pixel are substantially equal to alleviate the color crosstalk phenomenon between the first sub-pixel and the second sub-pixel when the display panel displays an image and to improve the display quality of the display panel.

[0069] Furthermore, in a case where the pixel structure includes a third light-emitting section and the turn-on voltage of the third sub-pixel corresponding to the third light-emitting section is different from the turn-on voltage of the sub-pixel corresponding to the first light-emitting section, in the pixel structure manufactured by the method according to the embodiment of the disclosure, at least one second resistive structure may be arranged in the space between the first additional light-emitting layer and the cathode layer and arranged in the direction perpendicular to the third light-emitting section to adjust the resistance value of the third sub-pixel corresponding to the third light-emitting section by the at least one second resistive structure, thereby increasing the turn-on voltage of the third sub-pixel.In this case, the turn-on voltages of the third sub-pixel and the first sub-pixel are substantially the same in order to facilitate the color crosstalk between the first sub-pixel and the third sub-pixel when the display panel displays an image and to improve the display quality of the display panel.

[0070] Furthermore, in the pixel structure manufactured by the method according to the embodiment of the disclosure, the resistances of the at least one first resistive structure and the at least one second resistive structure can be adjusted to substantially equalize the turn-on voltages of the first sub-pixel, the second sub-pixel, and the third sub-pixel, thereby facilitating the color crosstalk phenomenon between any two adjacent sub-pixels of the first sub-pixel, the second sub-pixel, and the third sub-pixel, and maximally improving the display quality of the display panel.

[0071] The paragraphs in the description are described in a progressive manner, differences from the other paragraphs are highlighted in each paragraph and reference may be made to one another for identical or similar parts within the paragraphs.

[0072] The above descriptions enable those skilled in the art to make or use the disclosure. Various modifications to the embodiments according to the present disclosure will be apparent to those skilled in the art, and general principles defined herein may be implemented in other embodiments.

Claims

[1] A pixel structure that has the following characteristics: a substrate (1), an anode layer (2) on a surface of the substrate (1); a first additional light-emitting layer (3) on a surface of the anode layer (2), wherein the anode layer (2) is completely covered by the first additional light-emitting layer (3) which is continuous, wherein the additional light-emitting layer (3) is designed to transport holes; a light-emitting layer (4) on a surface of the first additional light-emitting layer (3), wherein the light-emitting layer (4) has at least a first light-emitting section (41) and a second light-emitting section (42), the first light-emitting section (41) corresponds to a first sub-pixel, the second light-emitting section (42) corresponds to a second sub-pixel, and a turn-on voltage of the first sub-pixel is greater than a turn-on voltage of the second sub-pixel, wherein a turn-on voltage is a voltage at which a pixel starts to be displayed; a cathode layer (5) on a surface of the light-emitting layer (4), wherein the light-emitting layer (4) is covered by the cathode layer (5); and at least one first resistive structure (6) in a space between the first additional light-emitting layer (3) and the cathode layer (5), wherein the at least one first resistive structure (6) is arranged in a direction perpendicular to the second light-emitting section (42), at least partially overlaps with the second light-emitting section (42) and does not overlap with the first light-emitting section (41), and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure (6) and the second light-emitting section (42) and a resistance value of the first light-emitting section (41) is smaller than a first predetermined value, wherein the first predetermined value is smaller than or equal to a difference between the resistance value of the second light-emitting section (42) and the resistance value of the first light-emitting section (41). [2] The pixel structure according to claim 1, wherein an orthogonal protrusion of the second light-emitting portion (42) onto the substrate (1) is completely covered by an orthogonal protrusion of the at least one first resistive structure (6) onto the substrate (1), or an orthogonal protrusion of the at least one first resistive structure (6) onto the substrate (1) is completely covered by an orthogonal protrusion of the second light-emitting portion (42) onto the substrate (1). [3] The pixel structure according to claim 1, wherein the at least one first resistive structure (6) is arranged between the first additional light-emitting layer (3) and the light-emitting layer (4), or the at least one first resistive structure (6) is arranged between the light-emitting layer (4) and the cathode layer (5). [4] The pixel structure according to claim 3, wherein a second additional light-emitting layer (7) is arranged between the cathode layer (5) and the light-emitting layer (4). [5] The pixel structure according to claim 3, wherein at least one third additional light-emitting layer (8) is arranged between the first additional light-emitting layer (3) and the light-emitting layer (4), at least one of the at least one third additional light-emitting layer (8) has a plurality of non-continuous additional light-emitting portions, the first light-emitting portion (41) is covered by a part of the plurality of additional light-emitting portions, and the second light-emitting portion (42) is covered by a part of the plurality of additional light-emitting portions. [6] The pixel structure according to claim 1, wherein the at least one first resistive structure (6) is made of an organic conductive material or an inorganic conductive material, wherein the inorganic conductive material is selected from a group consisting of aluminum, silver, molybdenum, aluminum oxide, silver oxide or molybdenum oxide. [7] The pixel structure according to claim 1, wherein the at least one first resistive structure (6) has a thickness in a range of 5 nm to 30 nm inclusive. [8] The pixel structure according to claim 1, wherein the light-emitting layer (4) further comprises a third light-emitting portion (43), the third light-emitting portion (43) corresponds to a third sub-pixel, and a turn-on voltage of the third sub-pixel is greater than the turn-on voltage of the second sub-pixel and is not greater than the turn-on voltage of the first sub-pixel;the pixel structure further comprises at least one second resistive structure (9) in the space between the first additional light-emitting layer (3) and the cathode layer (5), wherein the at least one second resistive structure (9) is arranged in a direction perpendicular to the third light-emitting section (43), at least partially overlaps with the third light-emitting section (43) and does not overlap with the first light-emitting section (41) or the second light-emitting section (42), and an absolute value of a difference between a sum of resistance values of the third light-emitting section (43) and the at least one second resistive structure (9) and the resistance value of the first light-emitting section (41) is smaller than a second predetermined value; [9] The pixel structure according to claim 8, wherein the second predetermined value is less than or equal to a difference between the resistance value of the third light-emitting section (43) and the resistance value of the first light-emitting section (41). [10] A method of manufacturing a pixel structure applied to the pixel structure according to any one of claims 1 to 9, the method comprising the steps of: Providing the substrate; Forming an anode layer on a surface of the substrate; Forming the first additional light-emitting layer on a surface of the anode layer, wherein the anode layer is completely covered by the first additional light-emitting layer which is continuous, wherein the additional light-emitting layer is configured to transport holes; Forming the light-emitting layer and the at least one first resistive structure on a surface of the first additional light-emitting layer, wherein the light-emitting layer has at least the first light-emitting section corresponding to a first sub-pixel and a second light-emitting section corresponding to a second sub-pixel, a turn-on voltage of the first sub-pixel is greater than a turn-on voltage of the second sub-pixel, wherein a turn-on voltage is a voltage at which a pixel begins to be displayed, the at least one first resistive structure is arranged in a direction perpendicular to the second light-emitting section, at least partially overlaps with the second light-emitting section, and does not overlap with the first light-emitting section,and an absolute value of a difference between a sum of resistance values of the at least one first resistive structure and the second light-emitting section and a resistance value of the first light-emitting section is smaller than a first predetermined value, wherein the first predetermined value is smaller than or equal to a difference between the resistance value of the second light-emitting section (42) and the resistance value of the first light-emitting section (41); and, Forming the cathode layer on a side of the light-emitting layer facing away from the first additional light-emitting layer, wherein the light-emitting layer and the at least one first resistive structure are covered by the cathode layer. [11] The method according to claim 10, wherein forming the light-emitting layer and the at least one first resistive structure on a surface of the first additional light-emitting layer comprises the steps of: Providing a first mask on the surface of the first additional light-emitting layer; Forming the first light-emitting portion on a part of the surface of the first additional light-emitting layer, with the first mask as a mask; Removing the first mask and providing a second mask on surfaces of the first light-emitting portion and the first additional light-emitting layer; and Forming the second light-emitting portion and the at least one first resistive pattern overlapped on a part of the surface of the first additional light-emitting layer with the second mask as a mask. [12] A display panel (2000) having the pixel structure according to any one of claims 1 to 9.

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