semiconductor component

Abstract

Semiconductor component (1) comprising at least one radiation-emitting optical semiconductor chip (11, 12, 13, 14), an integrated circuit (15), and exactly two connection contacts (21, 22), wherein the semiconductor component (1) has a variable emission characteristic which is controlled as a function of a time-varying voltage signal (V1-2) that can be applied to the connection contacts (21, 22) for both data transmission and supply of the semiconductor component (1), and wherein the semiconductor chip (11, 12, 13, 14) has a truncation point (39) at the end of a process (38) and / or the integrated circuit (15) has a truncation point (39) at the end of a process (38).

Description

[0001] Radiation-emitting optical semiconductor components comprise one or more LEDs. Those with multiple LEDs are also called multi-LEDs. These optical semiconductor components have several connection contacts through which they can be connected and supplied with current and voltage. Data transmission to the semiconductor component occurs via additional connection contacts.

[0002] Conventional optical semiconductor components with only two connection contacts merely allow the supply of the semiconductor component and have a fixed emission characteristic that does not change during operation.

[0003] Optical semiconductor devices that can be controlled during operation have separate connection contacts for power supply and control. Typically, they have at least four pins: two for applying the supply voltage and two for data transmission. This allows, for example, the transmission of control data for three channels, each containing several LEDs connected in series. Arrangements with multiple semiconductor devices can be controlled via a serial bus for data transmission. The semiconductor devices are connected to this bus, and data is transmitted from one device to the next. Pulse-width modulation (PWM) is commonly used as the modulation method for data transmission.

[0004] The task is to provide a simpler optical semiconductor component.

[0005] The problem is solved by a semiconductor component with at least one radiation-emitting optical semiconductor chip, an integrated circuit, and exactly two connection contacts. The semiconductor component has a variable emission pattern, which is controlled by a time-varying voltage signal applied to the connection contacts for both data transmission and power supply to the semiconductor component. The emission pattern is changed depending on the voltage signal. The emitted radiation is typically light in the visible and / or invisible range.

[0006] The use of only two connection contacts, which handle both the control of the semiconductor component during operation and its power supply, results in a compact design. The emission characteristics of the emitted radiation can include brightness and / or color. Thus, the semiconductor component can emit radiation in various colors and brightness levels, yet it only has two electrical connection contacts. The colors and brightness levels are freely adjustable, changeable during operation, and externally programmable. The emission characteristics can also be modified, either alternatively or additionally, by changing the emission profile. By misaligning lenses on the semiconductor chips, particularly microLEDs, one LED could emit in one direction, for example, to the right, and another LED in the opposite direction, for example, to the left. Depending on which LED is energized, the emission profile of the semiconductor component changes.In addition to the beam direction, the width of the radiation could also be adjusted.

[0007] A semiconductor component is a mechanical unit that can be assembled from several elements. It can be a chip with a semiconductor substrate on which an electronic circuit and / or conductor structures are applied, and on which the connection contacts and radiation-emitting optical semiconductor chips are arranged.

[0008] An integrated circuit is an electronic circuit implemented on a semiconductor material chip. Such an integrated circuit is also called an IC. For particularly small dimensions, the term µIC is also used.

[0009] The radiation-emitting semiconductor chip can be, for example, an LED chip with an active, light-emitting area on a semiconductor substrate. More than one radiation-emitting semiconductor chip can be used, such as two chips of different colors, whose color and / or brightness can be controlled and changed via the connection contacts. One implementation could be an RGB LED chip with multiple light-emitting areas and several transistors in the integrated circuit, which nevertheless only has two connection contacts. A combination of a conventional integrated circuit and several LED chips is also conceivable.

[0010] The semiconductor component can be contacted and controlled externally via its connection contacts. When the semiconductor component is installed in an assembly, electrically conductive connections to the semiconductor component are established via these connection contacts.

[0011] Only two wires are required for wiring. If the optical semiconductor component is mounted on a common-ground package, only one wire is needed. This saves on system costs. In automotive manufacturing, for example, wiring harness costs represent a significant portion of the overall expenses. Wiring decorative or Christmas tree ornaments with such semiconductor components is thinner and more delicate than with conventional arrangements; it is also easier to route. For new applications such as displays in textiles, simple two-layer wiring is enabled. In some cases, even single-layer wiring is possible. By using micro-integrated circuits (µICs), chip costs, and therefore component costs, can be significantly reduced.

[0012] In one embodiment, the two connection contacts are located on the top side of the semiconductor component. In another embodiment, they can be located on the bottom side of the semiconductor component. Alternatively, one of the connection contacts is located on the top side and the other on the bottom side.

[0013] One embodiment of the semiconductor component further comprises a substrate on the upper surface of which at least one optical semiconductor chip and the integrated circuit are arranged. In this case, the integrated circuit is located next to the optical semiconductor chips. Contact areas of the integrated circuit can be arranged on its upper surface, its lower surface, or both.

[0014] In one embodiment, at least one optical semiconductor chip is arranged on the integrated circuit, so that the integrated circuit is located beneath the optical semiconductor chips. In this embodiment, the substrate is unnecessary; instead, the optical semiconductor chips are applied to the semiconductor material plate of the integrated circuit, which serves as a support.

[0015] The semiconductor chip may have a detachment point, and / or the integrated circuit may have a detachment point. The semiconductor chip may have a ridge-shaped extension with the detachment point at its end, and / or the integrated circuit may have a ridge-shaped extension with the detachment point at its end. It should be noted that the integrated circuit and the optical semiconductor chips mounted on the substrate will have a detachment point on a ridge-shaped extension or a detachment point on their outer surface if they have been mounted using the parallel transfer method described below. The same applies to optical semiconductor chips mounted on the integrated circuit. They will have a detachment point on a ridge-shaped extension or a detachment point on their outer surface if they have been mounted using the parallel transfer method described below.

[0016] Power supply and data transmission are achieved using the same voltage signal. It has a supply voltage component to power the semiconductor component, which is typically a DC component, and a data signal component for transmitting data to control the radiation pattern, so the voltage signal fluctuates around the DC component.

[0017] In one version, the voltage signal is a pulse-width modulated signal with a DC component, so that the data input is modulated onto the voltage supply via pulse-width modulation.

[0018] In one implementation, the voltage signal is a frequency-shifted signal with a DC component, so the data input is modulated onto the power supply via frequency modulation. Using frequency modulation allows for a low circuit complexity while significantly increasing the reliability of data transmission, as there are fewer electromagnetic compatibility (EMC) issues.

[0019] The voltage signal may have a synchronization signal section during data pauses when no data is being transmitted.

[0020] The voltage signal fluctuates between a high level above the average supply voltage level and a low level below the average supply voltage level. The low level is higher than the voltage required to operate the semiconductor component, ensuring a sufficient supply to the component at all times, regardless of data transmission.

[0021] The integrated circuit comprises contact areas for applying the voltage signal and at least one contact area for electrical connection to the at least one optical semiconductor chip. It further comprises a decoder capable of demodulating the data signal component and providing the demodulated data, at least one current source for supplying the at least one optical semiconductor chip, a current source controller capable of providing at least one pulse-width modulated signal for controlling the at least one current source, and a memory coupled between the decoder and the current source controller capable of providing data for the current source controller. This arrangement allows for the decoding of the voltage signal and the control of the radiation pattern via the current sources for the optical semiconductor chips.The memory can also be called RGB memory, which contains control data for, for example, three channels of optical semiconductor chips of three colors. The power source is a constant current source that feeds the optical semiconductor chip. It can be switched on and off by the current source controller, which generates the pulse-width modulated signal, depending on this signal, thus allowing the emission to be dimmed. The decoder includes an active bandpass filter to filter out the frequency components in a frequency-shifted voltage signal.

[0022] In one embodiment, the integrated circuit further comprises an address memory in which an address assigned to the semiconductor component is stored, and an address comparator suitable for comparing whether address information in the demodulated data matches the address assigned to the semiconductor component. This allows the address to be compared with data transmitted via a bus for multiple semiconductor components.

[0023] In one embodiment, the integrated circuit further includes a reference voltage source that is coupled to and capable of controlling at least one current source. In the simplest case, only a fixed reference voltage is provided for controlling the current. This can also be modified via a current programming interface to influence the current and thus the radiation pattern.

[0024] In one embodiment, the integrated circuit also includes a processing unit that, for example, enables address comparison and / or the control of the reference voltage source and thus the current. Means for error detection and handling during the operation of the optical semiconductor chips, especially LED chips, can be provided. This allows defective LED chips and incorrect data to be detected.

[0025] An encoder can be provided to modulate the data to be transmitted from the semiconductor component as a data signal component of the voltage signal. This allows data to be written to the transmitter.

[0026] The invention is illustrated below with reference to the drawing in the following figures. Fig. 1A and Fig. Figure 1B shows an embodiment of a semiconductor component in side and top view. Fig. 2A and Fig. Figure 2B shows a source wafer and a target substrate during parallel transfer. Fig. 3A and Fig. Figure 3B shows an embodiment of a semiconductor component in side and top view. Fig. 4A and Fig. Figure 4B shows an embodiment of a semiconductor component in side and top view. Fig. 5, Fig. 6, Fig. 7 and Fig. Figure 8 shows voltage signal waveforms as a function of time. Fig. Figure 9 shows a schematic circuit diagram for an exemplary embodiment of a semiconductor component. Fig. Figure 10 shows a voltage signal waveform as a function of time. Fig. Figure 11 shows a schematic circuit diagram for an embodiment of an integrated circuit of a semiconductor component. Fig. Figure 12 shows a schematic circuit diagram for an embodiment of an integrated circuit of a semiconductor component. Fig. Figure 13 shows a voltage signal waveform and the waveforms of two decoded signals as a function of time. Fig. Figure 14 shows an exemplary embodiment of a decoder. Fig. Figure 15 shows an exemplary embodiment of a bandpass filter. Fig. Figure 16 shows an embodiment of a semiconductor component with a housing. Fig. Figure 17 shows an embodiment of a semiconductor component in a housing. Fig. Figure 18 shows an embodiment of an arrangement with several semiconductor components. Fig. 19A and Fig. Figure 19B shows an embodiment of an arrangement with several semiconductor components in side and top view. Fig. 20A and Fig. Figure 20B shows an embodiment of an arrangement with several semiconductor components in side view and top view.

[0027] Fig. Figure 1A shows an embodiment of a semiconductor component.1 in side view. Fig. Figure 1B shows the embodiment in a top view.

[0028] The semiconductor component 1 is a controllable RGB LED chip with a red LED chip 11 , a green LED chip 12 and a blue LED chip 13 Examples of radiation-emitting optical semiconductor chips mounted on a substrate 2 are arranged. Since several LED chips 11 , 12 , 13 are intended, the semiconductor component can 1 also referred to as multi-LED.

[0029] The substrate 2 is preferably electrically conductive, e.g. made of doped silicon, or has conductive structures, and is metallized on its underside. On the substrate 2 is also an integrated circuit (IC) 15 applied. Contact areas 17, also referred to as “pads”, are located on the top side of the integrated circuit. 15 Planned. Ladder structures 18 run along one upper side of the substrate 2 to the contact areas 17 of the integrated circuit 15 and form electrically conductive connections between the contact areas 17 of the integrated circuit 15 and contact areas of the LED chips 11 , 12 , 13 on their undersides. The LED chips 11 , 12 , 13 are focused on the ladder structures 18 applied. An electrically conductive, translucent layer. 19 is on the LED chips 11 , 12 , 13 planned.

[0030] Thus, on the top side of the substrate... 2 not only the integrated circuit 15 and the LED chips 11 , 12 , 13applied, but at least one metallization layer with conductor structures 18 for wiring the components 11 , 12 , 13 , 15 Two or more wiring levels 18 , 19 are conceivable.

[0031] The semiconductor component 1 Furthermore, it has a first connection contact 21 on its underside, which is formed by the flat metallization, as well as a second connecting contact 22 on the top side, which is also metallic and by means of the ladder structure 18 with the integrated circuit 15 is electrically connected.

[0032] The following dimensions of the exemplary embodiment are representative. The height h is in the range of 120 µm. The length 1 is in the range of 300 µm. The width b The size is in the range of 200 µm. Semiconductor components with an area of ​​1 mm² are also conceivable.2 or larger. Length and width of the square LED chips 11 , 12 , 13 They are approximately 40 µm.

[0033] Due to their small size, the LED chips arranged in the component 11 , 12 , 13 and the integrated circuit 15 also known as µLEDs or µICs.

[0034] The semiconductor component 1 It has a variable radiation pattern, which depends on the input from the connection contacts. 21 , 22 applicable, time-varying voltage signal V 1-2 is controlled, which affects both the semiconductor component 1 It is supplied with power and also transmits data for control. The radiation pattern, for example in terms of brightness and color, can be changed during operation.

[0035] At the first connection point 21 can a potential V 1-2 concerns that also extend to the LED chips11 , 12 , 13 and the integrated circuit 15 is conducted. Via the second connection contact 22 , at which a reference potential GND is located at the reference potential GND to the integrated circuit 15 and to the LED chips 11 , 12 , 13 be conducted.

[0036] Semiconductor component described above 1 can be manufactured in wafer composites, thus enabling manufacturing steps for a majority of semiconductor components. 1 These processes occur in parallel. These manufacturing steps include, in particular, the application or growth of layers and structures, and, if necessary, their partial removal. Only in a final step are the semiconductor components assembled. 1 isolated cases.

[0037] The LED chips 11 , 12 , 13 and the integrated circuit 15are applied to the substrate using a process called transfer printing. 2 applied. This is a parallel assembly process in which the integrated circuits are 15 on a target substrate 54 The components, which will later be separated, are placed on the substrate. This assembly process is for all subsequent semiconductor components. 1 in combination and simultaneously by means of an elastomeric stamp a plurality of integrated circuits 15 from a source wafer 52 to the target substrate 54 transferred and placed on top of it in such a way that the integrated circuits 15 at their intended positions on the later semiconductor components 1 The stamp plate has a structure that is related to the size and positions of the integrated circuits. 15 on the target substrate 54 corresponds.

[0038] The manufacturing of integrated circuits 15This also occurs in parallel in the wafer stack on the source wafer. 52 This involves the integrated circuits. 15 arranged in a grid pattern and manufactured in such a way that a plurality of integrated circuits 15 via support structures 30 The chips are connected to each other and to the wafer substrate. They are held in the source substrate by tethers until they are broken out during the printing process. In parallel transfer, the stamp is placed on the integrated circuits to be transferred. 15 They are pressed down so that they adhere to the stamp. As soon as the stamp moves in the opposite direction, the integrated circuits are released. 15 from the support structures 30 Separated. At the integrated circuit 15 A demolition site remains. 39 , which are located on a bridge-like extension 38 , which is part of the support structure 30 is, can be located. The integrated circuit15 It may have several tear points located on the side or bottom. The assembly process is very cost-effective because it can be done in parallel.

[0039] The thickness of integrated circuits manufactured in this way 15 The size of the IC can be significantly smaller than that of conventionally isolated chips. For example, the IC size is approximately 30×40 µm. The thickness is about 5 µm.

[0040] Fig. Figure 2A shows a schematic representation of the source wafer. 52 with a plurality of integrated circuits 15 and the support structure 30 , via which the integrated circuits 15 are connected. Some integrated circuits 15 are via the parallel assembly process from the source wafer 52 on the target substrate 54 have been transferred. Fig. Figure 2B shows a schematic representation of the target substrate. 54 , which later in substrate plates2 the semiconductor components 1 It is happening occasionally.

[0041] On the target substrate 54 are already the integrated circuits 15 placed, corresponding to their position on the target wafer 54 from the source wafer 52 extracted and applied to the target substrate using the stamp. 54 have been transferred.

[0042] In the case of the isolated integrated circuits 15 The demolition site is located 39 on a bridge-shaped extension 38 , which is part of the support structure 30 is. Alternatively, the demolition site can 39 also directly on an outside of the integrated circuit 15 condition.

[0043] In the parallel assembly process, a plurality of integrated circuits are placed. 15 simultaneously transmitted. Then the ladder structure 18 applied, which the contact areas17 the integrated circuits 15 about the substrate 2 continuously with the LED chips 11 , 12 , 13 to connect. In further steps, the LED chips will be 11 , 12 , 13 , each of which was also manufactured in combination on a source wafer, with parallel transfer to the target substrate as described above 54 set and with the ladder structures 18 connected. In further manufacturing steps, the second connection contacts are 22 and the translucent, conductive layer 19 on the LED chips 11 , 12 , 13 upset.

[0044] Finally, the semiconductor components 1Occasionally. By using thin-film wiring techniques on the target substrate, pad sizes can be made particularly small, for example, in the range of 5 µm. Examples of such techniques include the so-called PI or planar interconnect technology, in which a structured, planar metal layer is used as the electrical connection; the so-called RDL or redistribution layer technology, i.e., a rewiring technology; or photolithography combined with thin-film metal deposition and deposition. This enables further miniaturization of the chip. Direct integration with LEDs on the same substrate is thus possible.

[0045] Fig. Figure 3A shows an embodiment of a semiconductor component. 1 in side view. Fig. Figure 3B shows an exemplary embodiment of the semiconductor component. 1 During supervision. To avoid repetition, only the differences compared to the [previous section] will be noted. Fig. 1A and Fig. 1B shown in the exemplary embodiment.

[0046] In this embodiment, many small LED chips are used. 11 , 12 , 13 , 14 different colors, namely red, green, blue and white, in a mixed arrangement on the substrate 2 applied. Via metallic structural layers on the substrate. 2 These can be connected in series, in a series, or alternately both. One possible connection is a series connection of all LED chips. 11 , 12 , 13 , 14 the same color.

[0047] In this embodiment, the integrated circuit 15 because of the LED chips 11 , 12 , 13 , 14 Four colors also provide four contact areas 17 for connecting the LEDs 11 , 12 , 13 , 14as well as one for connection to the second terminal contact 22 on. The integrated circuit 15 is above the aforementioned contact area 17 connected to the external power supply and data signals, and with its underside to the first connection contact 21 Instead of the contact areas located above 17 is also their arrangement on the underside of the integrated circuit 15 possible to use the integrated circuit 15 in flip-chip contacting on the substrate 2 to raise.

[0048] The integrated circuit 15 and the LED chips 11 , 12 , 13 , 14 Can all contact areas 17 on the underside, or all contact areas 17 on the top side, or partial contact areas 17 on the underside and partially in contact areas 17on the top.

[0049] Fig. Figure 4A shows an embodiment of a semiconductor component. 1 in side view. Fig. Figure 4B shows an exemplary embodiment of the semiconductor component. 1 in the overhead view. This embodiment differs from the previous one essentially in that the integrated circuit 15 also the support function of the substrate 2 takes over, since the LED chips 11 , 12 , 13 , 14 are arranged on it.

[0050] The semiconductor component 1 includes the integrated circuit 15 , on which a large number of LED chips 11 , 12 , 13 , 14 Different colors, namely red, green, blue, and white, are applied in a mixed arrangement. The integrated circuit 15 takes over the function of the substrate 2, as described in the preceding embodiments. Via metallic structural layers on the integrated circuit 15 can the LED chips 11 , 12 , 13 , 14 They can be connected in series, in a series, or both alternately. One possible connection is all LED chips connected in series. 11 , 12 , 13 , 14 of the same color. Alternatively, the LED chips can be connected directly. 11 , 12 , 13 , 14 in flip-chip contacting with contact areas 17 on the top side of the integrated circuit 15 possible.

[0051] The integrated circuit 15 It features a metal layer on its underside as the first connection contact. 21 as well as a second metallic connection contact 22 on its upper side. A connection of the LED chips. 11 , 12, 13 , 14 This is achieved via a conductive, translucent layer. 19 on the LED chips 11 , 12 , 13 , 14 .

[0052] The above-described version with an integrated circuit 15 as a carrier for the LED chips 11 , 12 , 13 , 14 This is useful if the IC area is equal to or greater than the area required for the LED chips. 11 , 12 , 13 , 14 is required or if the integrated circuit 15 large enough for cost-effective, conventional chip assembly. This is the case, for example, with a size greater than 150×150 µm.

[0053] The semiconductor component 1 It has a radiation pattern that can be changed during operation, for example with regard to brightness and / or color, which depends on the connection contacts. 21 , 22applicable, time-varying voltage signal V 1-2 is controlled, which affects both the semiconductor component 1 It is supplied with power and also transmits data for control.

[0054] Fig. Figure 5 illustrates the power supply and control of a semiconductor component. 1 , whose possible structure in the preceding exemplary embodiments in connection with the Fig. 1A, Fig. 1B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B has been described.

[0055] The signal path between the connection contacts is shown. 22 , 21 applied voltage signal V 1-2 depending on the time t depicted.

[0056] The voltage signal V 1-2 It consists of a constant voltage supply for the LED chips 11 , 12 , 13 , 14 and the integrated circuit 15and a modulated data signal. The former is the supply voltage level. V DD The modulated data signal oscillates between a high and a low level around the supply voltage level. V DD with the hub V dat .

[0057] In this example, the data DAT digitally modulated using pulse width modulation, so that the information is contained in the length of the pulses.

[0058] If no data transmission is required, for example after adjusting the radiation pattern, data is no longer necessary. DAT to transmit. Only the supply voltage level. V DD to maintain the operation of the semiconductor component 1 The selected radiation characteristic is present during the data pause.

[0059] Fig. Figure 6 illustrates the power supply and control of a semiconductor component. 1, whose possible structure in the preceding exemplary embodiments in connection with the Fig. 1A, Fig. 1B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B has been described.

[0060] The signal path between the connection contacts is shown. 21 , 22 applied voltage signal V 1-2 depending on the time t depicted.

[0061] To avoid repetition, only the differences to the previous text will be mentioned. Fig. 5 described. In this example, the data DAT The signal is modulated between high and low levels using frequency modulation, more precisely frequency shift keying (FSK). One bit value is encoded by a sine wave with a first frequency, and the other bit value by a sine wave with a second frequency that differs from the first.

[0062] Fig. Figure 7 illustrates the power supply and control of a semiconductor component. 1 , whose possible structure in the preceding exemplary embodiments in connection with the Fig. 1A, Fig. 1B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B has been described.

[0063] The signal path between the connection contacts is shown. 21 , 22 applied voltage signal V 1-2 depending on the time t To avoid repetition, only the differences to the previous version are shown. Fig. 5 described. In contrast to that embodiment, in the one described in Fig. In the embodiment shown in 7, a pulse width signal is modulated onto the power supply even when no data is being transmitted. This offers the advantage that a synchronization signal is available during this time, i.e., the data pause. SYNC can be transmitted between sender and receiver.

[0064] The data signal can be a start sequence START include, which signals that the actual information data will follow. DAT are transmitted. For example, the data sequence 0010111 indicates the start of data transmission. The information data then follows. DAT , which may also contain checksum bits. The synchronization signal SYNC This signal is not always present when no data transmission is taking place. It can also simply indicate the supply voltage level. V DD issue.

[0065] Fig. Figure 8 illustrates the power supply and control of a semiconductor component. 1 , whose possible structure in the preceding exemplary embodiments in connection with the Fig. 1A, Fig. 1B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B has been described.

[0066] The FSK signal waveform between the connection contacts is displayed. 21 ,22 applied voltage signal V 1-2 depending on the time t depicted.

[0067] To avoid repetition, only the differences to the previous text will be mentioned. Fig. 6 described. In contrast to that embodiment, in the one described in Fig. In the illustrated embodiment 8, an FSK signal is modulated onto the power supply even during data pauses. This offers the advantage that a synchronization signal is maintained during this time. SYNC can be transmitted between sender and receiver.

[0068] The data signal can be a start sequence START include, which signals that data will follow. DAT be transmitted. For example, the data sequence shows 111 the start of the information data transmission. After the start sequence START The information data will arrive DAT , which may also contain checksum bits. The synchronization signal SYNC This signal is not always present when no data transmission is taking place. It can also simply indicate the supply voltage level. V DD issue.

[0069] The FSK signal offers the advantage that the voltage supply remains constant on average. With pulse-width modulation, the average voltage changes depending on the data content. When many bits are transmitted... 0 During transmission, the supply voltage drops. With many bits... 1It increases. Another advantage of FSK modulation is its low susceptibility to interference due to its narrow spectrum. It operates with only two frequencies, which can be easily filtered out at the receiver. The square wave signal of pulse-width modulation has a much broader spectrum because its steep edges contain many frequency components. This signal is more prone to distortion during transmission and reception, and incorrect data can result. While FSK modulation requires more complex signal generation, if communication is only unidirectional, the complexity lies in the semiconductor components. 1 No. This means a simple circuit can be implemented there as well.

[0070] Fig. Figure 9 shows a schematic circuit diagram for an exemplary embodiment of a semiconductor component. 1 .

[0071] The semiconductor component 1 It only has two connection contacts. 21 , 22. Via the first and second connection contacts 21 , 22 will the potential V 1-2 and the reference potential GND created.

[0072] Regarding the LED chips 11 , 12 , 13 The anodes of the LEDs are short-circuited and connected to the first terminal contact. 21 connected, so that the potential V 1-2 is attached. The LED chips 11 , 12 , 13 are connected to the integrated circuit on the cathode side 15 over its contact areas R , G , B tied together.

[0073] The integrated circuit 15 includes a decoder 60 , a storage 62 and a power source control 64 as well as a power source 71 , 72 , 73 for each LED chip 11 , 12 , 13 The power sources 71 , 72 , 73are constant current sources and each provides a constant current, but are controlled by the current source control 64 switchable to control the LED chips 11 , 12 , 13 to dim. The decoder 60 demodulates the voltage signal V 1-2 , in particular its data signal component, into a digital data sequence that is synchronized into memory 62 is written. Based on the data from memory. 62 The LEDs are controlled by means of the current source control 64 , the pulse width modulation signals for controlling the current sources 71 , 72 , 73 and thus the LED chips 11 , 12 , 13 generated, controlled by the power sources 71 , 72 , 73 They can be switched on and off. The LED chips 11 , 12 , 13 are each connected to a power source 71 , 72 , 73It is operated by one of the pulse width signals. The data depth for a color can be as little as eight bits, but it can also be more than 20 bits.

[0074] Fig. Figure 10 illustrates the power and data supply and the voltage components of the voltage signal. V 1-2 in a possible operating mode of the semiconductor component 1 based on a signal waveform of the voltage signal V 1-2 depending on the time t The voltage signal V 1-2 It is frequency-shifted. When no data is being transmitted, it has a constant value, which is the average supply voltage. V E It is. During data transmission, it oscillates between a maximum value. V F and a minimum value V D .

[0075] A so-called forward voltage is required for the LEDs, connected in series with the power supplies, to switch to the conducting state. A power supply typically contains at least one field-effect transistor. A voltage drops across this transistor when it is switched on. VFET away. V C is the highest forward voltage, which is both a voltage VLED takes into account the voltage required to operate the LED. VFET , which is applied to the transistor controlling the LED. In the diagram, the voltage level required to operate the LEDs is shown with V A designated.

[0076] For the safe operation of the power sources 71 , 72 , 73 is often a reference voltage VREF necessary. This can be derived from the voltage signal. V 1-2 to be won. The tension level V B is the reference voltage VREF for the power sources 71 , 72 , 73 .

[0077] In this operating mode, the minimum voltage V D greater than the forward voltage V C The LED is insensitive to the modulated data signals because sufficient voltage is always available for its operation. It can remain lit at all times and does not need to be switched off for programming. The excess voltage is dropped across the power source.

[0078] Is the maximum voltage V F When this occurs, the maximum loss at the power source is referred to as VLmax The minimum voltage is... V D When this happens, a minimal loss occurs at the power source, referred to as VLmin When the medium supply voltage is applied V E This results in a moderate loss, referred to as VLm .

[0079] The disadvantage of this circuit in this operating mode is that thermal losses increase with higher signal amplitude. However, high signal amplitudes are desirable for long transmission distances and high noise immunity.

[0080] Another possible operating mode involves V D < V C to choose, i.e., the minimum voltage V D below the forward voltage V C to lower the voltage. In this case, smoothing the voltage signal is necessary. V 1-2 This is necessary to ensure the LEDs always receive sufficient voltage. Data information is lost during smoothing. This step requires large capacitors that cannot be miniaturized. These would have to be mounted outside the chip.

[0081] Fig. Figure 11 shows a schematic circuit diagram for an embodiment of an integrated circuit. 15 a semiconductor component 1with only two connection contacts 21 , 22 .

[0082] To avoid repetition, the description focuses on differences from the one in Fig. 9 described embodiment.

[0083] On the integrated circuit 15 are contact areas 17 to invest the potential V 1-2 and the reference potential GND as well as contact areas R , G , B for connecting the LED chips 11 , 12 , 13 Available in three different colors.

[0084] In addition to the elements of the Fig. The integrated circuit in the embodiment described in 9 comprises 15 a reference voltage source 66 The reference voltage it provides VREF This can be generated, for example, with a Zener diode. The reference voltage source 66 is for the operation of the constant current sources71 , 72 , 73 , with which it is coupled, makes sense. In addition, the reference voltage can VREF can also be used to operate gates for the remaining logic.

[0085] In this embodiment, the integrated circuit comprises 15 furthermore, one that decodes 60 downstream address comparer 68 , which has an address memory 67 , for example, an address EEPROM. They provide addressing functionality: Every integrated circuit 15 It has its own fixed address, stored in a ROM, or a changeable address, stored in an EEPROM. The address is a sequence of numbers. The data signal for such a semiconductor component 1 begins with the address of the semiconductor component 1 , for which the data is intended. In the semiconductor component 1The address of the incoming data signal is compared with the internally stored address. If the addresses match, the data is valid for this semiconductor component. 1 determined and are used in the address comparison tool 68 downstream storage 62 loaded. Based on the data from memory 62 The LEDs are controlled by means of the current source control 64 , the pulse width signals for controlling the LED chips 11 , 12 , 13 generated, controlled.

[0086] Fig. Figure 12 shows a schematic circuit diagram for an embodiment of an integrated circuit. 15 a semiconductor component 1 with exactly two connection contacts 21 , 22 .

[0087] To avoid repetition, the description focuses on differences from the previously described embodiment.

[0088] In this highest stage of development, the integrated circuit comprises 15 an arithmetic unit 65 , for example, a controller that connects the decoders 60 and the storage 62 is coupled. A small controller is also called a microcontroller. The arithmetic unit 15 is equipped with a memory, for example EEPROM. 63 coupled, in which address and calibration information is stored. The EEPROM memory 63 It therefore contains not only the chip address but also data for calibrating the LEDs.

[0089] Additionally, an encoder is 61 provided for, which is connected to the computer 65 as well as the contact area 17 for the supply potential V 1-2 is coupled. The encoder 61 is suitable for sending information back to the sender by means of the voltage signal V 1-2 at the connection contacts 21 , 22is modulated depending on the data to be transmitted.

[0090] The reference voltage source 66 Furthermore, it enables error detection and processing regarding the LED chips. 11 , 12 , 13 This functionality is also known as "error handling". For this purpose, the reference voltage source... 66 with the calculating unit 65 coupled. The reference voltage source 66 It detects, for example, defective LEDs and is able to write or send this information back. In response to a defective LED, it can, for example, be switched off. The constant current sources 71 , 72 , 73 are accessible via a programming function in the reference voltage source 66 programmable or modifiable.

[0091] Fig. Figure 13 illustrates the decoding of a frequency-shifted signal using the waveform of the voltage signal. V 1-2 and two decoded signals Q2 and Q3 depending on the time t .

[0092] During data transmission, the frequency-shifted voltage signal is used. V 1-2 between a first frequency f1 and a second frequency f2 switched.

[0093] The first decoded signal Q2 It has a first, high level when the first frequency f1 is present and a second, low level otherwise. This corresponds to a binary signal with the transmitted data information. The second decoded signal Q3 It has a first, high level when the second frequency f2 is present and a second, low level otherwise. This corresponds to a binary signal with the transmitted data information. In data transmission, the first and second decoded signals are Q2 , Q3They are complementary to each other. If no data is being transmitted, they have the same low level, indicating a data pause.

[0094] Fig. Figure 14 schematically shows a decoder by means of which the voltage signal V 1-2 the first and second decoded signal Q2 , Q3 can be provided.

[0095] Active bandpass filters can be used to decode the FSK signal. The decoder includes a first bandpass filter. 81 , a second bandpass filter 82 and a Schmitt trigger 83 .

[0096] With the first filter 81 with the pass frequency f1 The lower-frequency signal is filtered out and decoded first. Q2 provided. With the second filter 82 with the pass frequency f2 The higher-frequency signal is filtered out and decoded as the second signal. Q3provided. A Schmitt trigger is used for synchronization. 83 a synchronization signal Q1 extracted.

[0097] Fig. Figure 15 shows an embodiment of an active electronic filter: a Sallen-Key bandpass filter comprising operational amplifiers and several resistors and capacitors.

[0098] The filter includes a first and second operational amplifier. U1 , U2 One input of the first operational amplifier U1 is with a series circuit consisting of a first and a second capacitor C1 , C2 connected. R1 coupled. Between a potential node between the first and second capacitors C1 , C2 and the other input of the first operational amplifier U1 , which is connected to its output, is a second resistor R2coupled. Between the output of the first operational amplifier U1 and an input of the second operational amplifier U2 is a series circuit consisting of a third and fourth resistor R3 , R4 coupled. A fourth capacitor is connected between this input and the reference potential. C4 coupled. Between a potential node between the third and fourth resistors R3 , R4 and the other input of the second operational amplifier U2 , which is connected to its output, is a third capacitor C3 coupled.

[0099] Fig. Figure 16 shows an embodiment of a semiconductor component with two terminal contacts in a wired radial LED package with a radiation-transparent housing. 90 , which simultaneously acts as an encapsulation and a lens. The component features multiple LED chips. 11 , 12 , 13 and an integrated circuit15 as a separate component. The electrical connection between LED chips 11 , 12 , 13 , the integrated circuit 15 and at least one of the connection contacts is made by means of wire contacts 99 , also known as bond wires. The semiconductor component 1 It has a variable radiation pattern that depends on the voltage signal. V 1-2 It is controlled, thus allowing for free programming. Power supply and data transmission occur as described above.

[0100] Fig. Figure 17 shows an exemplary embodiment of a component. 95 , which differs from the previous one in that the semiconductor component 1 as an RGB LED chip, for example in connection with Fig. 1, Fig. 3 and Fig. 4 described, in a housing 90 with two contact legs 91 , 92 , designed as a wired radial LED package95 is housed. A connecting contact of the semiconductor component. 1 is equipped with one leg across its underside 91 connected. The other connection contact is connected via a wire connection. 93 with the other leg 92 connected. It is merely a wire connection between this leg. 92 and the second connection contact 22 necessary.

[0101] Fig. Figure 18 shows an arrangement of several components connected in parallel. 95 , as in connection with Fig. 16 described, on a control unit 97 . Via the control unit 97 , which is the voltage signal V 1-2 The semiconductor components are generated 1 supplied with power and data. In this case, the semiconductor components 1 Not individually addressable. All semiconductor components 1They glow with variable, consistent color and brightness. Such an arrangement without addressing the semiconductor components. 1 It can be used, for example, as decorative lighting.

[0102] Fig. 19A shows an embodiment of an arrangement of several semiconductor components 1 inside the case 90 under supervision. Fig. Figure 19B shows the side view of the embodiment.

[0103] In this embodiment, RGB LED chips are used as semiconductor components. 1 in a pre-molded enclosure 90 inserted. The radiation is directed upwards. Rear-mounted and connected to the terminals. 21 , 22 connected contact elements 96 are on a single-layer printed circuit board 98 connected. The chips are arranged in a matrix. The voltage signal V 1-2 is via two comb-shaped ladder structures 94 on the circuit board98 for the potential V 1-2 and the reference potential GND to the contact elements 96 Designed through the double-comb structure of the conductor structures. 94 All components can be supplied with data and power. Each semiconductor component exhibits 1 By assigning an individual address, a simple display can be implemented. However, the data for each pixel must be written serially. Therefore, high resolutions and refresh rates are not possible.

[0104] Fig. 20A shows an exemplary embodiment of an arrangement of several semiconductor components 1 under supervision. Fig. Figure 20B shows the side view of the embodiment.

[0105] In this embodiment, the semiconductor components 1 RGB LED chips housed in a pre-molded package 90 are inserted. The radiation is directed upwards. With the connecting contacts21 , 22 connected contact elements 96 They protrude laterally from the back. The chips are arranged in a matrix pattern.

[0106] The power supply is provided via a tissue. 40 with conductive and insulating fibers 41 , 42 , 4 The first are responsible for supplying the potential. V 1-2 and the reference potential GND The fibers run in this way. 41 to invest the potential V 1-2 above and the fibers 42 to apply the reference potential below, or vice versa. Between these fibers 41 , 42 are insulating fibers 43 The electrical connection is made from above or below via a conductive loop to the contact element. 96 This arrangement is a flexible, textile display. The semiconductor components 1 inside the case 90 are in the tissue 40The upper and lower layers of fabric are electrically conductive. The intermediate layer(s) are non-conductive.

[0107] Displays designed this simply are also interesting for textiles, for example to generate different warning symbols alternately, such as for construction workers or police officers.

[0108] The features of the exemplary embodiments can be combined. The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments. Reference symbol list 1 Semiconductor component 2 Substrat 11, 12, 13, 14 LED chips 15 integrated circuit 17, R, G, B Contact area 18 ladder structure 19 leading layer 21, 22 Connection contact 30 Support structure 38 continuation 39 Demolition site 40 tissues 41, 42, 43 fibers 52 source wafers 54 Target substrate 60 decoders 61 encoders 62, 63, 67 storage 64 Power source control 65 Calculating Unit 66 Reference voltage source 68 address comparers 71, 72, 73 Power source 81, 82 Bandpass filter 83 Schmitt triggers 90 cases 91, 92 Contact leg 94 ladder structure 95 component 96 contact element 97 Control unit 98 circuit board 99 wire contact C1, C2, C3, C4 Capacitor DAT data f1, f2 frequency GND reference potential l, h, b Length, height, width Q1, Q2, Q3 Signal R1, R2, R3, R4 Resistor START Start sequence SYNC synchronization signal t time U1, U2 Amplifier V 1-2 , V dat , V DD , VREF, VLED, VFET, VLmin, VLm, VLmax, V A , V B , V c , V D , V E , V F , Tension

Claims

[1] Semiconductor component (1) with - at least one radiation-emitting optical semiconductor chip (11, 12, 13, 14), - an integrated circuit (15), - exactly two connection contacts (21, 22), wherein the semiconductor component (1) has a variable emission characteristic which depends on a time-varying voltage signal (V) that can be applied to the connection contacts (21, 22). 1-2 ) is controlled both for data transmission and for supplying the semiconductor component (1). [2] Semiconductor component (1) according to claim 1, wherein the emission characteristic comprises brightness and / or emission profile and / or emission direction and / or emission width and / or color. [3] Semiconductor component (1) according to claim 1 or 2, wherein the two connection contacts (21, 22) are arranged on a top side of the semiconductor component (1) or are arranged on a bottom side of the semiconductor component (1) or one of the connection contacts (21, 22) is arranged on the top side and one of the connection contacts (21, 22) is arranged on the bottom side. [4] Semiconductor component (1) according to one of claims 1 to 3, further comprising a substrate (2) on the top side of which the at least one optical semiconductor chip (11, 12, 13, 14) and the integrated circuit (15) are arranged. [5] Semiconductor component (1) according to one of claims 1 to 3, wherein the at least one optical semiconductor chip (11, 12, 13, 14) is arranged on the integrated circuit (15). [6] Semiconductor component (1) according to one of the preceding claims, wherein the semiconductor chip (11, 12, 13, 14) has a break point (39) at the end of a projection (38) and / or wherein the integrated circuit (15) has a break point (39) at the end of a projection (38). [7] Semiconductor component (1) according to one of the preceding claims, wherein the voltage signal (V 1-2 ) a supply voltage component (V E ) to supply the semiconductor component and a data signal component (V DD ) for transmitting data for controlling the radiation pattern. [8] Semiconductor component (1) according to one of the preceding claims, wherein the voltage signal (V 1-2 ) is a pulse-width modulated signal or where the voltage signal (V) 1-2 ) is a frequency-shifted signal. [9] Semiconductor component (1) according to any of the preceding claims, wherein the voltage signal (V 1-2) between a high value above (V F ) of an average supply voltage value (V E ) and a low value (V D ) below the average supply voltage value (V E ) fluctuates, and the lower values ​​(V) D ) is greater than a voltage (V) required to operate the semiconductor component (1) C ). [10] Semiconductor component (1) according to any of the preceding claims, wherein the voltage signal (V 1-2 ) includes a synchronization signal section (SYNC) in data pauses. [11] Semiconductor component (1) according to any one of claims 7 to 10, wherein the integrated circuit (15) comprises: - Contact areas (17) for the voltage signal (V 1-2 ), - at least one contact area (17, R, G, B) for electrical connection with the at least one optical semiconductor chip (11, 12, 13, 14), - a decoder (60) suitable to demodulate the data signal component and provide the demodulated data, - at least one power source (71, 72, 73) to supply the at least one optical semiconductor chip (11, 12, 13, 14), - a current source control (64) suitable to provide at least one pulse width modulated signal for controlling the at least one current source (71, 72, 73), - a memory (62) coupled between the decoder (60) and the power source control (64) and suitable to provide data for the power source control (64). [12] Semiconductor component according to claim 11, wherein the decoder (60) comprises an active bandpass filter (81, 82). [13] Semiconductor component (1) according to claim 11 or 12, wherein the integrated circuit (15) further comprises: - an address memory (67) in which an address assigned to the semiconductor component (1) is stored, and - an address comparator (68) suitable to compare whether an address information in the demodulated data matches the address assigned to the semiconductor component (1). [14] Semiconductor component (1) according to any one of claims 11 to 13, wherein the integrated circuit (15) further comprises: a reference voltage source (66) coupled with at least one current source (71, 72, 73) and suitable for controlling it. [15] Semiconductor component (1) according to any one of claims 11 to 14, wherein the integrated circuit (15) further comprises - a calculating unit (65), - Means for error detection and treatment in the operation of optical semiconductor chips (11, 12, 13, 14). [16] Semiconductor component (1) according to any one of claims 11 to 15, wherein the integrated circuit (15) further comprises: an encoder (61) to convert data to be transmitted from the semiconductor component (1) as a data signal component of the voltage signal (V) 1-2) to modulate.