Method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell

Abstract

Method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell, characterized in that the silicon solar cell is first provided with the emitter layer, the contact grid and a back contact, and that the contact grid is electrically connected to one pole of a voltage source, and that a contacting device electrically connected to the other pole of the voltage source is connected to the back contact, and that a voltage directed against the forward direction of the silicon solar cell, which is lower in magnitude than the breakdown voltage of the silicon solar cell, is applied to the voltage source.is applied and that when this voltage is applied, a point light source is passed over the sun-facing side of the silicon solar cell, illuminating a section of the sun-facing side and inducing a current flow in that section, and that this current flow, relative to the section, results in a current density of 200 A / cm². 2 up to 20,000 A / cm 2 has and acts on the sub-area for 10 ns to 10 ms.

Description

[0001] The invention relates to a method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell.

[0002] To connect crystalline silicon solar cells, a metal paste in the form of a contact grid is applied to their front surface, which is coated with dielectric silicon nitride, using a screen printing process. After application, the metal paste is baked into the silicon nitride at 800–900 °C, thus forming an electrical contact with the emitter layer. The process control during the baking of the metal paste has a decisive influence on contact formation, with faulty process control leading to high contact resistances at the interface between the metal paste and the emitter layer of the silicon solar cell. High contact resistances can then result in a reduced efficiency of the silicon solar cell.

[0003] Prior art includes methods that enable efficiency stabilization or performance improvement of solar cells. For example, DE 10 2011 056 843 A1 describes a method for "stabilizing the efficiency of silicon solar cells." In this method, a continuous current flow is introduced into a solar cell array during the lamination process, which essentially regenerates boron-oxygen complexes in the silicon material.

[0004] US Patent 4,166,918 A proposes a method for improving the performance of a solar cell by applying a voltage opposite to its forward direction. This induces a current flow along short circuits within the solar cell, causing them to "burn out" and thus be eliminated.

[0005] However, the influence of these known methods on the transition between the contact grid and the emitter layer of a silicon solar cell is unknown.

[0006] To generate low-resistance electrical contacts with the emitter layer, low film resistances (below 100 ohms / sq) in the emitter layer are required. However, this leads to poor conversion of short-wavelength light into electrical current. Better conversion is achieved with film resistances in the range of 110–150 ohms / sq. However, with conventional burn-in processes, only relatively high-resistance junctions between the contact grid and the emitter layer can be created. To circumvent this, the concept of the selective emitter was developed (e.g., EP 2 583 315 B1). Here, the areas of the emitter layer that will later be printed with the metal paste are locally more heavily doped, thus locally lowering the film resistance. This, however, requires complex additional steps in the manufacturing process of silicon solar cells.

[0007] In the field of electronic components, it is known from DD 250 247 A3 that the ohmic contact behavior with semiconductor bodies contacted using electrically conductive adhesive can be improved by applying a voltage pulse. The mechanism of action for this contact improvement is not described in detail in the publication. The electrically conductive adhesives used for contacting consist essentially of electrically conductive particles, usually silver spheres or flakes, surrounded by a polymer matrix.

[0008] German patent application DE 10 2016 009 560 A1 proposes a method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell. In this method, the contact grid of a silicon solar cell is contacted with a contact pin matrix, and a current flow is generated between this matrix and the back contact of the solar cell via voltage pulses. With pulse durations between 1 ms and 100 ms and induced currents in the range of 10 to 30 times the short-circuit current of the silicon solar cell, a high contact resistance between the contact grid and the emitter layer can be reduced, thus correcting, for example, faulty process control during the curing of the metal paste.Alternatively, a method is described in which an electrically prestressed silicon solar cell is scanned with a point light source, generating a current flow in an illuminated sub-area with a short-circuit current density 10 to 30 times that of the silicon solar cell.

[0009] The object of the invention is to further develop the method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell in such a way that the material influences caused by irradiation of the sun-facing side are further minimized. Furthermore, the method should also be applicable to silicon solar cells whose emitter layer has a high film resistance.

[0010] This task is accomplished by first providing a silicon solar cell with an emitter layer, a contact grid, and a back contact. The contact grid is electrically connected to one pole of a voltage source. The other pole of the voltage source is electrically connected to a contacting device mounted on the back contact. A voltage, directed opposite to the forward direction of the silicon solar cell and less than the breakdown voltage of the cell, is then applied to the voltage source. While this voltage is applied, a point light source is moved across the sun-facing side of the silicon solar cell, illuminating a section of this side. This induces a current flow in this section, resulting in a current density of 200 A / cm² relative to the area. 2 up to 20,000 A / cm 2has and acts on the sub-area for 10 ns to 10 ms.

[0011] The inventive method compensates for faulty process parameters during the curing of the metal paste, ensuring that the solar cells still achieve the optimal series resistance for their structure. Furthermore, the inventive method achieves very good ohmic contact behavior between the contact grid and the emitter layer, even in emitter layers with high film resistances, thus eliminating the process steps required to form a selective emitter. Additionally, the inventive method allows the curing process to be carried out at lower temperatures, thereby saving energy in the manufacturing process of the silicon solar cell.

[0012] It is suggested that the point light source is a laser, a light-emitting diode, or a flash lamp.

[0013] In one embodiment, the point light source has a power density of 500 W / cm² on the cutout. 2 up to 200,000 W / cm² 2 on.

[0014] One embodiment provides that the point light source emits radiation with a wavelength in the range of 400 nm to 1500 nm.

[0015] In a further embodiment, the cutout has an area in the range of 1·10 3 µm 2 up to 1·10 4 µm 2 .

[0016] It is proposed that the voltage directed against the forward direction of the silicon solar cell is in the range of 1 V to 20 V.

[0017] It is further proposed that the point light source be guided directly next to contact fingers of the contact grid across the sun-facing side of the silicon solar cell.

[0018] In one version, the silicon solar cell is monofacial or bifacial.

[0019] In another version, the silicon solar cell has an n- or p-doped silicon substrate.

[0020] One embodiment provides that the emitter layer has a layer resistance of over 100 ohms / sq.

[0021] Exemplary embodiments of the invention are explained below.

[0022] First, a crystalline silicon solar cell is provided. This cell has an antireflective layer of silicon nitride on its sun-facing side. Beneath this antireflective layer is an emitter layer of the silicon solar cell. On the sun-facing side, a front metallization in the form of a contact grid consisting of contact fingers and busbars is printed using a commercially available metal paste (e.g., silver paste), which has been cured according to the manufacturer's specifications and baked into the silicon nitride layer. On the non-sun-facing side, the silicon solar cell is equipped with a back contact. This back contact consists of a metallic layer that can be either passivated (PERC concept) or unpassivated.

[0023] The contact grid is electrically connected to one pole of a voltage source. A contacting device is connected to the other pole of the voltage source and linked to the return contact. A voltage directed against the forward direction of the silicon solar cell, and lower in magnitude than the breakdown voltage of the silicon solar cell, is then applied via the voltage source. While this voltage is applied, a point light source is passed over the sun-facing side of the silicon solar cell. The point light source can be, for example, a laser, a light-emitting diode, or even the focused radiation of a flash lamp. However, the invention is not limited to these radiation sources. The point light source emits radiation with wavelengths in the range of 400 nm to 1500 nm.This point light source illuminates a section of the sun-facing side of the silicon solar cell, inducing a current flow in that section. The current flow has a current density of 200 A / cm² in relation to the section. 2 up to 20,000 A / cm 2 and acts on the sub-area for 10 ns to 10 ms.

[0024] The high current densities required to improve the ohmic contact behavior between the contact grid and the emitter layer can be achieved, in particular, by shifting the operating point of the illuminated cell area without causing radiation-induced material damage. The necessary current densities are achieved through the interplay between the radiation density of the radiation source on the section, the exposure time, and the applied voltage, without the need for damaging irradiation. For an irradiated section with a diameter of approximately 60 µm, currents of 50 mA to 600 mA are typically generated at an applied voltage of 10 V, resulting in a current density on the order of 200 A / cm² relative to the area of ​​the irradiated section. 2 up to 20,000 A / cm 2It works. The absolutely flowing currents are kept low, especially by the relatively small area of ​​the irradiated section.

[0025] In principle, when scanning the sun-facing side of the silicon solar cell, it is sufficient to move the point light source directly to the left and right of the contact fingers. This results in processing times of approximately one second for a 6" cell using the inventive method.

[0026] In a further embodiment, silicon solar cells are treated with the inventive method whose contact grids were baked on at a lower temperature than that recommended by the manufacturer of the metal paste. Baking is usually carried out at temperatures in the range of 800 °C. If the metal paste is baked on at a temperature of, for example, only 700 °C, the silicon solar cells exhibit a high contact resistance at the interface between the contact grid and the emitter layer. Even with such silicon solar cells, the inventive method achieves an improvement in the ohmic contact behavior between the contact grid and the emitter layer. If the inventive method is combined with a baking process carried out at lower temperatures, the same contact resistances at the interface between the contact grid and the emitter layer are achieved while simultaneously saving energy.

[0027] The method according to the invention is applicable to both monofacial and bifacial silicon solar cells. In the latter case, a single-sided treatment is sufficient to optimize the contacts on both sides.

[0028] In another embodiment, silicon solar cells are treated whose emitter layer is non-selective and thus exhibits a high layer resistance (over 100 ohms / sq) across its entire surface. As described above, these silicon solar cells are also printed with the metal paste and subsequently subjected to a curing process, which can again be carried out according to the manufacturer's instructions or at lower temperatures. After the curing process, the silicon solar cells exhibit only a comparatively high contact resistance at the interface between the contact grid and the emitter layer. By applying the method according to the invention, the contact resistance of these silicon solar cells is also reduced through the interaction of the radiation density of the radiation source on the cutout, the exposure time, and the applied voltage, thus lowering the value required for optimal operation of the silicon solar cell.This eliminates the need for a selective emitter, thus omitting the complex steps required for its production.

Claims

[1] Method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell, characterized bythat first, the silicon solar cell is provided with the emitter layer, the contact grid, and a back contact; that the contact grid is electrically connected to one pole of a voltage source; that a contacting device electrically connected to the other pole of the voltage source is connected to the back contact; that a voltage directed against the forward direction of the silicon solar cell, which is lower in magnitude than the breakdown voltage of the silicon solar cell, is applied to the voltage source; that when this voltage is applied, a point light source is passed over the sun-facing side of the silicon solar cell, illuminating a section of a portion of the sun-facing side; that this induces a current flow in the portion; and that this current flow, relative to the section, has a current density of 200 A / cm². 2 up to 20,000 A / cm 2has and acts on the sub-area for 10 ns to 10 ms. [2] Method according to claim 1, characterized by that the point light source is a laser, a light-emitting diode, or a flash lamp. [3] Method according to claim 1, characterized by that the point light source on the section has a power density of 500 W / cm² 2 up to 200,000 W / cm² 2 exhibits. [4] Method according to claim 1, characterized by that the point light source emits radiation with a wavelength in the range of 400 nm to 1500 nm. [5] Method according to claim 1, characterized by that the section has an area in the range of 1·10 3 µm 2 up to 1·10 4 µm 2 has. [6] Method according to claim 1, characterized by , that the voltage directed against the forward direction of the silicon solar cell is in the range of 1 V to 20 V. [7] Method according to claim 1, characterized by, that the point light source is guided directly next to contact fingers of the contact grid over the sun-facing side of the silicon solar cell. [8] Method according to claim 1, characterized by that the silicon solar cell is monofacial or bifacial [9] Method according to claim 1, characterized by that the silicon solar cell has an n- or p-doped silicon substrate. [10] Method according to claim 1, characterized by that the emitter layer has a layer resistance of over 100 ohms / sq.