METHOD FOR CREATING A CONNECTION BETWEEN COMPONENTS AND BUILDING ELEMENT

Abstract

Method for producing a mechanical and electrical connection between a first component (1) and a second component (2) comprising the following steps: - Providing the first component with a partially exposed first insulating layer (1I), a plurality of first through-contacts (1D) and an exposed, partially structured and partially planarized first contact layer (1K), wherein the first through-contacts are each laterally enclosed by the first insulating layer and the first contact layer partially covers the first insulating layer and completely covers the first through-contacts; - Providing the second component with a partially exposed second insulating layer (2I), a plurality of second through-contacts (2D), and an exposed, partially structured and partially planarized second contact layer (2K), wherein the second through-contacts are each laterally enclosed by the second insulating layer, and the second contact layer partially covers the second insulating layer and completely covers the second through-contacts; and - Joining the components in such a way that the contact layers overlap in top view, whereby the components are mechanically and electrically connected to each other at the partially planarized contact layers (1K, 2K) by means of a direct bonding process, wherein - an exposed surface (1F) of the first component (1) is formed exclusively from surfaces of the first contact layer (1K) and the first insulating layer (1I), - an exposed surface (2F) of the second component (2) is formed exclusively from surfaces of the second contact layer (2K) and the second insulating layer (2I), and - when the components (1, 2) are joined, a common interface (12) is formed between the components (1, 2), wherein the common interface (12) is a common connection plane formed exclusively by the overlap of the planarized surfaces of the first and second contact layers (1K, 2K).

Description

[0001] A method for creating a connection between components is described. Furthermore, a component made of components is described.

[0002] Current chip technologies employ aligned hybrid bonding using insulating, transparent oxide layers and local metallic contact layers. Precise planarization of the local metallic contact layers with the insulating transparent oxide layers is crucial. This is because precise planarization ensures both a mechanically stable connection and reliable electrical contact formation. However, if the metallic contact layers are chosen to be small, for example to minimize light absorption, a very high degree of alignment is required.

[0003] The relevant state of the art is represented by US 2014 / 0 264 948 A1, US 2004 / 0157 407 A1, DE 10 2016 104 280 A1, US 2007 / 0 096 130 A1 and US 6 596 640 B1.

[0004] One task is to specify a reliable and cost-effective method for creating a mechanical and electrical connection between components. Another task is to specify a stable component made up of these components.

[0005] These problems are solved by the method and the component according to the independent claims, as well as in connection with such a method or such a component. Further embodiments and developments of the method or the component are the subject of the further claims.

[0006] According to at least one embodiment of a method for manufacturing a component from at least two parts, a first part and a second part are provided. Each part can have a contact layer, which is, in particular, partially structured and partially planar. For example, the contact layer of the first part has several laterally spaced sub-regions that are assigned to different electrical polarities of the first part. The contact layer of the second part can be designed analogously to the contact layer of the first part.

[0007] A lateral direction is understood to be a direction that runs parallel to a principal extensional surface of the first component, the second component, or the first and / or the second contact layer. A vertical direction is understood to be a direction that is perpendicular to this principal extensional surface. The vertical and lateral directions are approximately orthogonal to each other.

[0008] The subregions of the contact layers can be spaced apart from each other by lateral intermediate areas and electrically insulated from each other by these intermediate areas. The intermediate areas can be configured as lateral separation channels between the subregions of the contact layers. In particular, the contact layers are structured in this respect. Each subregion of the contact layers can have an exposed surface, which is preferably planar. Preferably, all subregions are planar or planarized. For example, the planarized exposed surfaces of the subregions of the contact layers have a mean roughness of at most 3 nm, 2 nm, 1 nm, or 0.5 nm. For example, the mean roughness is specified as an RMS (Root Mean Square) value. The exposed surfaces of the subregions can globally form a planar connection plane of the first or the second component.In this case, the exposed surfaces of the subregions can be located at approximately the same vertical height globally. The globally planar connection plane of the first or second component can have a mean roughness of at most 3 nm, 2 nm, 1 nm, or 0.5 nm.

[0009] According to at least one embodiment of the method, contact layers are each formed from a transparent and electrically conductive material. For example, the transparent and electrically conductive material is a transparent electrically conductive oxide (TCO). The contact layers can each be formed from InSnO, InZnO, AlSnO, ZnO, GaInO, or similar materials.

[0010] Transparent electrically conductive oxides are transparent, conductive materials, usually metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). Besides binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds, such as Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O₄, also belong to this group. 12 or mixtures of different transparent conductive oxides belong to the group of TCOs. Furthermore, TCOs do not necessarily have a stoichiometric composition and can also be p-doped or n-doped.

[0011] According to at least one embodiment of the method, the components are brought together such that the contact layers overlap in plan view, thereby mechanically and electrically bonding the components to one another at the partially planarized contact layers using a direct bonding process. The first component and the second component, in particular, have similarly prepared exposed surfaces.

[0012] In direct bonding, the contact layers are in direct contact with each other. In this process, planarized surfaces, such as the surfaces of the contact layers, are brought into physical contact. The mechanical connection is based primarily or exclusively on hydrogen bonds and / or van der Waals interactions in the immediate vicinity of a common interface between the planarized surfaces. To create covalent bonds between atoms or molecules on the surfaces in physical contact, a subsequent thermal treatment is applied to achieve increased bond strength. The electrical connection between the components is established primarily during the direct bonding process.

[0013] According to at least one embodiment of the method, the first component is provided. The first component may have a partially exposed first insulating layer. The first component may have a plurality of first through-contacts, which are, in particular, laterally surrounded by the first insulating layer. Along the vertical direction, the first through-contacts may extend through the first insulating layer. The first component, in particular, has an exposed first contact layer that is partially structured and partially planarized. In a top view of the component, the first contact layer may partially cover the first insulating layer and completely cover the first through-contacts.

[0014] The first through-contacts can each be completely covered by one of the sub-regions of the first contact layer. It is possible for several first through-contacts to be covered by the same sub-region of the first contact layer. For example, the first through-contacts can each be electrically connected to one of the sub-regions of the first contact layer. Looking at the first component from above, the first contact layer can partially cover the first insulating layer in such a way that the first insulating layer is freely accessible in the areas between the sub-regions of the first contact layer. In other words, the first insulating layer can be exposed in the areas between the sub-regions of the first contact layer.

[0015] According to at least one embodiment of the method, the second component is provided, in particular, with a partially exposed second insulating layer. The second component can have a plurality of second through-contacts. The second component can be designed analogously to the first component. In particular, the second component has an exposed second contact layer that is partially structured and partially planarized. Analogous to the first component, the second through-contacts can each be laterally enclosed by the second insulating layer. In a top view, the second contact layer can partially cover the second insulating layer and completely cover the second through-contacts. In the intermediate regions between the partial regions of the second contact layer, the second insulating layer can be freely accessible. In the remaining regions, the insulating layer can be completely covered by the second contact layer.

[0016] Before the components are joined, both the first and second components may have an exposed surface. The exposed surface of the first or second component may consist of surfaces, in particular exclusively of surfaces of the first contact layer and the first insulating layer, or of the second insulating layer and the second contact layer. The exposed surface of the first or second component may exhibit planarized subregions and depressions, the depressions being primarily due to the contact layer not covering the insulating layer. The depressions may each have a vertical depth, which in particular corresponds to the vertical thickness of the corresponding contact layer.In other words, the exposed, particularly planarized, surfaces of the first / second contact layer can be vertically raised compared to the exposed surfaces of the first / second insulating layer, namely by the vertical thickness of the corresponding contact layer. The exposed surface of the first or second component, which is particularly globally planarized and has local depressions, preferably consists exclusively of surfaces of the contact layer and the insulating layer.

[0017] According to at least one embodiment of the method, a common interface is formed between the components when they are joined. This common interface is, in particular, a common connection plane, preferably formed exclusively by the overlap of the planarized surfaces of the first and second contact layers. Step transitions between the first and second contact layers can be formed at the common interface. If the recesses of the component surfaces abut each other, cavities can be formed between the components. It is possible that a subregion of the first and / or second contact layer is laterally surrounded by a cavity, in particular, completely enclosed laterally. The cavity is, in particular, free of any medium in a liquid or solid state.The cavity can be filled with a gaseous medium, such as air or an inert gas.

[0018] In at least one embodiment of a method for producing a mechanical and electrical connection between a first component and a second component, the first component and the second component are provided. The first component has a partially exposed first insulating layer, a plurality of first through-contacts, and an exposed first contact layer that is partially structured and partially planarized, wherein the first through-contacts are each laterally enclosed by the first insulating layer. The first contact layer can partially cover the first insulating layer and completely cover the first through-contacts. The second component has a partially exposed second insulating layer, a plurality of second through-contacts, and an exposed second contact layer that is partially structured and partially planarized.The second through-holes are each laterally enclosed by the second insulating layer. The second contact layer can partially cover the second insulating layer and completely cover the second through-holes. The components are assembled in such a way that the contact layers overlap in plan view, thereby mechanically and electrically bonding the components to each other at the partially planarized contact layers using a direct bonding process.

[0019] In such a process, direct bonding preferably takes place exclusively on the surfaces of the first and second contact layers. The first insulating layer is only indirectly adjacent to the second insulating layer. At the overlap areas, the first insulating layer is vertically spaced from the second insulating layer by the first and second contact layers. In the recessed areas, the first insulating layer may be vertically spaced from the second insulating layer by a cavity. The first through-contacts are mechanically and electrically connected to the second through-contacts only via the contact layers.

[0020] At the interface between the first and second components, i.e., at the common surface, the first contact layer is directly adjacent to the second contact layer. Thus, the first contact layer is electrically connected to the second contact layer. Both the first and second contact layers can each have several laterally spaced subregions, with each subregion of the first contact layer being directly adjacent to a corresponding subregion of the second contact layer and, in particular, being laterally spaced and electrically insulated from the other subregions of the second contact layer. For example, each subregion of the first contact layer is directly adjacent to exactly one subregion of the second contact layer, and vice versa.

[0021] According to at least one embodiment of the method, the first contact layer and the second contact layer are each structured, transparent, and electrically conductive oxide layers. By completely covering the through-contacts with the contact layer, the total area covered by the typically radiation-impermeable through-contacts can be kept small.

[0022] Furthermore, the use of such contact layers simplifies the planarization step, as any local irregularities in a hybrid structure can be compensated for by the contact layer's coverage. In this case, the hybrid structure can consist of the through-contacts and their associated insulating layer. The local irregularities of the hybrid structure can be vertical step transitions between the insulating layer and the through-contacts.

[0023] Additionally, the first or second component can be designed in such a way that lower alignment accuracy is required when assembling the components. The total area covered by the through-holes can be kept small, and by using radiation-transparent contact layers that completely cover the through-holes in plan view, no large radiation-absorbing areas are created, such as those found in purely metallic hybrid approaches.

[0024] According to at least one embodiment of the method, the first / second insulating layer has exposed areas that remain uncovered by the first / second contact layer. Along a vertical direction, the first contact layer thus projects at least locally beyond the exposed areas of the first insulating layer. Similarly, the second contact layer projects at least locally beyond the exposed areas of the second insulating layer along the vertical direction. Along the lateral direction, the exposed areas of the first / second insulating layer are, in particular, directly adjacent to the first / second contact layer.

[0025] Viewed from above, the exposed surface of the component can show a continuous exposed area of ​​the first insulating layer completely surrounding a sub-region of the first contact layer. The first insulating layer can have multiple such continuous exposed areas, each of which, viewed from above, completely surrounds one of the sub-regions of the first contact layer. Similarly, the second insulating layer can have multiple such continuous exposed areas, each of which laterally surrounds one of the sub-regions of the second contact layer. In particular, the exposed areas of the insulating layer each form an intermediate zone that electrically separates a sub-region of the contact layer from neighboring sub-regions of the same contact layer.

[0026] According to at least one embodiment of the method, the components each have a main body. For example, the main body comprises a support, a growth substrate, a semiconductor body, an epitaxial wafer structure, an LED wafer structure, and / or a support for an LED wafer structure. The first / second component can be a semiconductor wafer or a driver wafer, which, for example, comprises a semiconductor body and / or a support, in particular with electrical contact elements or with electronic driver elements, such as CMOS elements.

[0027] According to at least one embodiment of the method, the first insulating layer and / or the second insulating layer is at least partially planarized. The components can each have a main body on which the corresponding insulating layer is formed. Preferably, the first insulating layer or the second insulating layer is a structured, electrically insulating, and in particular transparent layer.

[0028] For example, the insulating layers are each made of a radiation-transparent material such as silicon dioxide or aluminum oxide. The first / second insulating layer can have openings that extend through it. A through-contact, for example, is arranged in each of these openings. In this sense, the insulating layer and the associated through-contacts form a hybrid layer. The hybrid layer can be planar.

[0029] The first / second insulating layer can be applied to the main body of the component by sputtering, vapor deposition, or an ALD (Atomic Layer Deposition) process. Its roughness, for example, of no more than 3 nm, 2 nm, 1 nm, or 0.5 nm, can either meet the requirements for direct bonding directly after deposition or be achieved through a planarization process, such as chemical-mechanical polishing. To create the through-holes, structured areas, especially openings in the insulating layer, are filled with an electrically conductive material, such as Cu, Ni, Al, W, Au, Ag, etc.

[0030] The application of the electrically conductive material, such as a metal, can be carried out using a deposition process like sputtering, vapor deposition, or ALD. After the vias are formed, they can be planarized, for example, by a chemical-mechanical polishing process. Alternatively, the vias can first be structured and applied to the main body of the component, after which the electrically insulating and radiolucent layer is deposited onto the main body and planarized. The vias and the associated insulating layer can be planarized in a single process step. This results in a hybrid surface consisting of the exposed surfaces of the vias and the insulating layer. For example, the hybrid surface has a mean roughness of at most 10 nm, 3 nm, 2 nm, 1 nm, or 0.5 nm.In a subsequent process step, the first / second contact layer can be formed on the hybrid surface in such a way that the first / second contact layer completely covers the through-contacts and partially covers the insulating layer.

[0031] According to at least one embodiment of the method, the first insulating layer and / or the second insulating layer can be planarized in certain areas and may exhibit local depressions and / or local elevations in those areas. The local depressions and / or elevations of the insulating layer can be formed in the exposed areas of the insulating layer that are not, or remain, covered by the contact layer when viewed from above.

[0032] According to at least one embodiment, the contact layer is applied to the hybrid surface consisting of the surfaces of the through-contacts and the insulating layer. For example, the contact layer is deposited in a structured manner. Alternatively, it is possible to first deposit the contact layer as a flat surface onto the hybrid surface and then structure it to form multiple sub-regions. Similar to the insulating layer, the roughness of the contact layer can either meet the requirements for direct bonding directly after deposition, for example, due to a low layer density of the contact layer. It is also possible to achieve the required maximum roughness for a direct bonding process subsequently by planarizing, for example, using a chemical-mechanical polishing process.

[0033] According to at least one embodiment of the method, the roughness of the first contact layer, the second contact layer, the first insulating layer, the second insulating layer and / or the hybrid surface of the surfaces of the through contacts and the insulating layers is at most 3 nm, preferably at most 2 nm or 1 nm, particularly preferably at most 0.5 nm.

[0034] According to at least one embodiment of the method, the main body of the first component or the second component has a carrier. It is possible that transistors or electrical circuits are integrated into or formed within the carrier. It is also possible that electrical conductors are arranged on the carrier. The through-holes are, in particular, electrically connected to the electrically conductive structures of the carrier. It is also possible that the main body has a semiconductor body. The semiconductor body can have a first semiconductor layer, a second semiconductor layer, and / or an active zone arranged between them, wherein the active zone is configured, in particular, for the generation or detection of electromagnetic radiation during operation of the component. The through-holes are, in particular, configured for the electrical contacting of the semiconductor body.

[0035] According to at least one embodiment of the method, the mechanical connection between the first and second components is based on van der Waals interactions, i.e., atomic interactions. The first contact layer is, in particular, directly adjacent to the second contact layer. A common interface, such as a common bonding plane, is formed between the partially planarized contact layers. In a direct bonding process, the common interface or bonding plane is, in particular, free of any additional bonding material, such as solder or adhesion promoter. The common interface is, in particular, an overlapping surface formed during the joining of the components between the planarized subregions of the exposed surfaces of the contact layers.

[0036] According to at least one embodiment of the method, the first contact layer and the second contact layer each have a plurality of laterally spaced subregions. Intermediate regions can be arranged between the subregions of the same contact layer, the intermediate regions spatially and electrically separating adjacent subregions of the contact layer from one another. In the intermediate regions, the first insulating layer or the second insulating layer is exposed. In other words, the first insulating layer or the second insulating layer is freely accessible in the intermediate regions and, in particular, remains uncovered by the first contact layer or the second contact layer.

[0037] According to at least one embodiment of the method, a cavity or a plurality of cavities is formed in the vertical direction between the first component and the second component. In lateral directions, the cavity can completely surround a first through-contact and / or a second through-contact. The cavity or cavities are formed, in particular, by combining the intermediate regions of the first contact layer and the second contact layer. Vertical protrusions and / or vertical depressions of the first insulating layer and / or the second insulating layer can be arranged in the cavity or cavities. The vertical protrusions or vertical depressions can be designed to prevent electrical breakdown between two adjacent subregions of the first / second contact layer that are associated with different electrical polarities.

[0038] In at least one embodiment of the component, it comprises a first component and a second component. The first component has a first insulating layer, a plurality of first through-contacts, and a partially structured contact layer. The first through-contacts are each laterally enclosed by the first insulating layer, with the first contact layer partially covering the first insulating layer and completely covering the first through-contacts. The second component has a second insulating layer, a plurality of second through-contacts, and a partially structured second contact layer. The second through-contacts are each laterally enclosed by the second insulating layer, with the second contact layer partially covering the second insulating layer and completely covering the second through-contacts.A mechanical and electrical connection between the components is formed, in particular at the contact layers, with the connection being based on van der Waals interactions.

[0039] The mechanical and electrical connection thus occurs at a common interface between the structured contact layers. These contact layers are each composed of a radiolucent and electrically conductive material. Such a connection based on van der Waals interactions is typically achieved through a direct bonding process. Since the van der Waals interactions occur exclusively at the common interface between the planarized subregions of the structured contact layers made of the same material, the planarization of the structured contact layers can be simplified compared to the planarization of a hybrid surface.

[0040] According to at least one embodiment of the component, the cavities are formed in the vertical direction between the first and second components. In cross-sectional view, the cavities can each have the shape of a step along the vertical direction. Such steps are characteristic features of a direct bonding process, since the contact layers or sub-regions of the contact layers generally do not align flush with each other when the components are joined. Furthermore, the sub-regions of the first contact layer and the corresponding sub-regions of the second contact layer can have different cross-sectional sizes.

[0041] According to at least one embodiment of the component, the cavities each enclose a sub-region of the first and / or the second contact layer in later directions. In other words, a cavity can completely encircle its corresponding sub-region of the first and / or second contact layer. Each of the sub-regions of the contact layer can completely cover at least one of the through-contacts. The sub-regions that are each laterally surrounded by a cavity can each completely cover exactly one of the through-contacts.

[0042] According to at least one embodiment of the component, at least one cavity is formed in the vertical direction between the first component and the second component. In the lateral direction, the cavity is located, in particular, between two adjacent subregions of the contact layers. Specifically, the cavity is wide enough to prevent electrical breakdown between the two adjacent subregions of the contact layer(s). The cavity can be filled with air or an inert gas. It is possible that the two adjacent subregions of the same contact layer are assigned different electrical polarities of the corresponding component. It is also possible that one subregion of the contact layer is assigned to a first electrical polarity of the component, and the adjacent subregion of the same contact layer is potential-free and not assigned to any of the component's electrical polarities.

[0043] According to at least one embodiment of the component, the first insulating layer and / or the second insulating layer has at least one local depression or at least one local elevation. The local depression or elevation can be formed in one of the cavities between the components. When the local depression or elevation of the first and / or the second insulating layer is present, the cavity is branched or stepped in certain areas, thereby largely preventing electrical breakdown between adjacent subregions of the contact layers.

[0044] According to at least one embodiment of the component, the local elevation of one insulating layer extends into the local depression of the other insulating layer. The local elevation of one insulating layer thus forms a kind of partition between the subregions of the contact layers. This enhances electrical insulation between the subregions of the contact layers or within the same contact layer. According to at least one embodiment of the component, the first contact layer or the second contact layer has a continuous subregion and several further subregions. The further subregions can each be enclosed laterally by the continuous subregion. The continuous subregion and the further subregions of the same contact layer can be assigned to different polarities of the component.It is also possible that the contiguous subregion remains potential-free and that the other subregions are assigned to different electrical polarities of the associated component. In other words, the contiguous subregion can be electrically neutral. Some of the other subregions can be assigned to a first electrical polarity of the component, while the remaining subregions are assigned to a second electrical polarity of the component that differs from the first. If the contiguous subregion is assigned to a first electrical polarity of the component, the other subregions, in particular all of them, can be assigned to a second electrical polarity of the component that differs from the first.

[0045] The method described here for creating a mechanical and electrical connection between two components is particularly suitable for manufacturing a component described here from components. The features described in connection with the component or the assembly can therefore also be applied to the method, and vice versa.

[0046] Further preferred embodiments and developments of the component, assembly, and the method for manufacturing the assembly result from the following in conjunction with the Fig. Examples 1A to 4 are explained. They show: Fig. 1A a first component or a second component in top view of the exposed surface of the contact layer or the insulating layer, Fig. 1B, Fig. 1C, Fig. 1D, Fig. 1E and Fig. 1F Schematic representations of some embodiments for the first component or for the second component, Fig. 2A Schematic representations of the process step for joining the first and second components, Fig. 2B, Fig. 2C, Fig. 2D, Fig. 3A, Fig. 3B and Fig. 3C Schematic representations of some exemplary embodiments of a component in sectional views, and Fig. 4 Another embodiment of the first and / or the second component in a top view of the exposed surface of the contact layer or the insulating layer.

[0047] Identical, similar, or similarly functioning elements are marked with the same reference symbols in the figures. The figures are schematic representations and therefore not necessarily to scale. Rather, comparatively small elements, and especially layer thicknesses, may be exaggerated for clarity.

[0048] In Fig. 1A is the first component 1 or the second component 2, schematically represented in a top view of the first contact layer 1K or the second contact layer 2K, respectively. In addition to the first contact layer 1K or the second contact layer 2K, the first component 1 or the second component 2 has a first insulating layer 1I and a plurality of through-contacts 1D, or a second insulating layer 2I and a plurality of second through-contacts 2D.

[0049] As in the Fig. As shown in Figure 1A, the contact layer 1K or 2K has a continuous subregion 1KN or 2KN. Furthermore, the contact layer 1K or 2K has a plurality of further subregions 1KP or 2KP, wherein the further subregions 1KP / 2KP are laterally spaced from each other and from the continuous subregion 1KN / 2KN. The continuous subregion 1KN or 2KN can be associated with a first electrical polarity of component 1 or 2. For example, the continuous subregion 1KN or 2KN forms an n-contact layer of the first component 1 or the second component 2. In a top view, the continuous subregion 1KN or 2KN can completely cover a plurality of first through-contacts 1D or a plurality of second through-contacts 2D. The through-contacts 1D or 2D covered by the contiguous subregion 1KN or 2KN can be designed as n-sided through-contacts 1DN or 2DN of the first component 1 or the second component 2.

[0050] The laterally spaced subregions 1KP or 2KP can be assigned to the second electrical polarity of the first component 1 or the second component 2. Each of the subregions 1KP and 2KP completely covers at least one, and in particular exactly one, first through-contact 1DP or 2DP. Compared to the through-contact 1D / 2D, the subregion 1KP / 2KP can have a larger cross-section, for example, at least 2 times, 4 times, or 6 times larger. The through-contact 1DP or 2DP can be configured as a p-side through-contact of the first component 1 or the second component 2.

[0051] As in the Fig. As shown in Figure 1A, each of the further subregions 1KP / 2KP of the contact layer 1 / 2 is completely surrounded by an exposed area 1IF or 2IF of the first insulating layer 1I or the second insulating layer 2I. The first insulating layer 1I or the second insulating layer 2I has a plurality of such exposed areas 1IF or 2IF. According to Fig. 1A The exposed areas 1IF or 2IF serve for electrical separation between the connected subregion 1KN and the further subregions 1KP of the first contact layer 1K or between the connected subregion 2KN and the further subregions 2KP of the second contact layer 2K.

[0052] The first component 1 has an exposed surface 1F. The exposed surface 1F is formed exclusively by exposed surfaces of the first contact layer 1KF and by surfaces of the exposed areas 1IF of the first insulating layer 1I. The second component 2 has an exposed surface 2F. The exposed surface 2F is formed exclusively by exposed surfaces of the sub-regions 2KN and 2KP of the second contact layer 2K and by surfaces of the exposed areas 2IF of the second insulating layer 2I.

[0053] According to Fig. 1A The exposed surface 1F of the first component 1 or the exposed surface 2F of the second component 2 is structured in certain areas such that the intermediate areas 1ZB or 2ZB are located between the sub-regions 1KN and 1KP or between the sub-regions 2KN and 2KP of the contact layer 1K or 2K. The intermediate areas 1ZB / 2ZB form, in particular, local depressions on the exposed surface 1F / 2F. Within and / or outside the depressions, the exposed surface 1F / 2F may be locally planar. Except for the intermediate areas 1ZB or 2ZB, the first insulating layer 1I and the second insulating layer 2I may be completely covered by the first contact layer 1K and the second contact layer 2K, respectively.

[0054] In Fig. 1B is the first component 1 or the second component 2, schematically represented in a sectional view along the section plane AA'. The first component 1 and the second component 2 can each have a main body 1H or 2H. The main body 1H / 2H can have a support and / or a semiconductor body. As shown in the Fig. As shown in Figure 1B, the through-contacts 1D or 2D are fully enclosed laterally by the first insulating layer 1I or the second insulating layer 2I. In the vertical direction, the through-contacts 1D / 2D can extend through the insulating layer 1I / 2I. In a top view, each of the through-contacts 1D / 2D is completely covered by a partial region 1KP, 2KP, 1KN, or 2KN of the contact layer 1K / 2K. In the intermediate regions 1ZB / 2ZB, the insulating layer 1I / 2I is not covered by the contact layer 1K / 2K. The exposed surface 1F or 2F thus has corresponding depressions in the intermediate regions 1ZB or 2ZB. Outside the depressions, the exposed surface 1F / 2F is formed exclusively by surfaces of the contact layer 1K / 2K and is preferably globally planar.

[0055] The one in Fig. The embodiment shown in 1C essentially corresponds to that shown in the Fig. The embodiment shown in 1B is for the first component 1 or for the second component 2. In contrast, in the Fig. Figure 1C shows that the main body 1H or 2H can have a support 4 and a semiconductor body 5. The semiconductor body 5 can have a first semiconductor layer 51 and a second semiconductor layer 52. An active zone 53 is arranged between the first semiconductor layer 51 and the second semiconductor layer 52, wherein the active zone 53 is configured, in particular, for the generation or detection of electromagnetic radiation during the operation of the component 1 or 2.

[0056] The through-holes 1D or 2D are specifically intended for electrical contacting the main body 1H or 2H. For example, the through-holes 1DP or 2DP are configured for electrical contacting the second semiconductor layer 52. The through-holes 1DN or 2DN can be configured for electrical contacting the first semiconductor layer 51. The through-holes 1DP or 2DP can be configured as p-side through-holes of the first component 1 or the second component 2. The through-holes 1DN or 2DN can be configured as n-side through-holes of the first component 1 or the second component 2. Some possible through-holes 1DN or 2DN are shown, for example, in the Fig. 1D, Fig. 1E and Fig. 1F is shown schematically. The 1DN / 2DN through-contacts can be made in one piece or in multiple pieces.

[0057] According to Fig. The through-hole 1DN or 2DN can extend through the semiconductor body 5 to a connection layer 8. The connection layer 8 can be configured as a current-expansion layer of the component 1 or 2, wherein the connection layer 8 is electrically conductively connected to the first semiconductor layer 51 of the semiconductor body 5. For electrical isolation of the through-holes 1DN or 2DN from the second semiconductor layer 52 or from the active zone 53, a passivation layer 7 can be partially formed within the semiconductor body 5 such that the passivation layer 7 completely encloses the through-hole 1DN or 2DN.

[0058] In contrast to the Fig. 1D can be the through contact 1DN or 2DN, for example, according to Fig. 1E is designed such that it extends only through the second semiconductor layer 52 and the active zone 53 into the first semiconductor layer 51. According to Fig. 1F, component 1 or 2 can have a plurality of such through-contacts 1DN or 2DN.

[0059] In the Fig. 1D, Fig. 1E and Fig. The first contact layer 1K can have one or more subregions 1KN of the first electrical polarity, one or more subregions 1KP of the second electrical polarity, and one or more further subregions 1KR. The further subregion 1KR or the majority of the further subregions 1KR can be assigned to the first or the second electrical polarity of component 1. Alternatively, the further subregion 1KR of the first contact layer 1K can be electrically neutral.

[0060] Analogous to the first component 1, the second component 2 can have a structured second contact layer 2K, wherein the second contact layer 2K can be subdivided into subregions 2KN of first electrical polarity, subregions 2KP of second electrical polarity, and further subregions 2KR. Analogous to the further subregions 2KR of the first contact layer 1K, the further subregions 2KR of the second contact layer 2K can be assigned to the first or second polarity of the second component 2, or be electrically neutral.

[0061] According to Fig. In step 2A, the first component 1 and the second component 2 are joined together to form the component 10. The mechanical and electrical connection between components 1 and 2 is achieved, in particular, without the use of an additional bonding layer. The connection between components 1 and 2 is based exclusively on van der Waals interactions between the first contact layer 1K and the second contact layer 2K. Components 1 and 2 are joined together in such a way that the exposed, partially planar surfaces 1F and 2F are in contact.

[0062] Prior to the bonding process, the crystalline properties of the contact layers 1K and 2K, which are formed in particular from a transparent, electrically conductive material, can be optimized by heat treatment, for example at a temperature between 100 °C and 900 °C inclusive, in an O₂ and / or N₂ atmosphere, and / or by plasma treatment. The plasma treatment includes, for example, RIE (Reactive Ion Etching) or ICP (Inductively Coupled Plasma) with N₂, O₂, or Ar plasma. Alternatively or additionally, the surface properties of the contact layers 1K and 2K can be optimally prepared by means of a cleaning step. Bonding is carried out via direct bonding, preferably with identically prepared components 1 and 2. The components 1 and 2 can each have a main body 1H or 2H, respectively, wherein the main body 1H or 2H comprises a support 4, 41, 42, and / or a semiconductor body 5 or 6.

[0063] Optionally, the bond can be strengthened by subsequent heat treatment.

[0064] According to Fig. The exposed surface 1F of the first component 1 is formed exclusively by the surfaces of the first contact layer 1K and the first insulating layer 1I. The exposed surface 2F of the second component can only be formed by the surfaces of the second contact layer 2K and the second insulating layer 2I. Since the insulating layers 1I and 2I are only exposed in the intermediate regions 1ZB and 2ZB, and these intermediate regions are not covered by the contact layer 1K or 2K, the first insulating layer 1I remains vertically spaced from the surface 2F of the second component 2 after bonding. Similarly, the second insulating layer 2I remains spaced from the exposed surface 1F of the first component 1 after bonding.

[0065] According to Fig. In section 2B, component 10 has a common interface 12 or a common connection plane 12 between the first component 1 and the second component 2. The common interface 12 is formed exclusively by the planarized surfaces of the first contact layer 1K and the planarized surfaces of the second contact layer 2K. The first through-contacts 1D are electrically connected to the second through-contacts 2D via the first contact layer 1K and the second contact layer 2K. Since both the first contact layer 1K and the second contact layer 2K are structured and cavities 12H are formed between the first component 1 and the second component 2, a first through-contact 1D is only electrically connected to its corresponding second through-contact 2D. The first through-contact 1D can be electrically insulated from the other second through-contacts 2D.

[0066] As in the Fig. Figure 2B shows that steps 12S or step transitions 12S are formed in the cavities 12H at the common interface 12. Such steps 12S or step transitions 12S at the common interface 12 are characteristic of a direct bonding process. In a direct bonding process, the common interface 12 or the bonding plane 12 is free of a bonding material, such as a solder material or an adhesion promoter material.

[0067] In the Fig. 2B indicates that the first main body 1H or the second main body 2H may have a support 41 or 42 and / or a semiconductor body 5 or 6. If the component 1 / 2 is a semiconductor wafer, the component 10 can be separated into smaller components, such as individual semiconductor chips. In contrast to the Fig. 2B it is possible that several first components 1 are attached to a single second component 2, or vice versa.

[0068] The one in Fig. The embodiment shown in 2C essentially corresponds to the one described in the Fig. 2B shows an embodiment for a component 10. In contrast, the main body 1H of the first component 1 has only one support 4 or 41. The second component 2 in the Fig. 2C corresponds to the one in the Fig. Component 2 is shown in Figure 1E. In this case, component 2 has a support 4 or 42, on which a semiconductor body 5 is arranged. The support 42 can be a growth substrate. Transistors can be arranged or formed in the first support 41, which are configured, for example, to control the semiconductor body 5. The semiconductor body 5 can be structured and have several individually contactable and thus individually controllable sub-bodies.

[0069] The one in Fig. The 2D illustrated embodiment for a component 10 essentially corresponds to the one shown in the Fig. 2B illustrated embodiment for a component 10. In contrast, in the Fig. In 2D, it is explicitly shown that components 1 and 2 each have a carrier 41 or 42 and a semiconductor body 5 or 6.

[0070] The semiconductor body 6 is electrically connected to the semiconductor body 5, in particular via the first through-contacts 1D, the contact layers 1K and 2K, and the second through-contacts 2D. The semiconductor bodies 5 and 6 can be connected in series, parallel, or antiparallel to each other. The semiconductor body 6 can have a first semiconductor layer 61, a second semiconductor layer 62, and an intermediate active zone 63. It is possible that the active zone 53 and the active zone 63 are each configured to generate electromagnetic radiation. For example, the active layers 53 and 63 are designed to generate electromagnetic radiation of different wavelengths. It is also conceivable that the semiconductor bodies 5 and 6 are connected antiparallel to each other, so that the semiconductor body 5 serves, in particular, as a protection diode for the semiconductor body 6, or vice versa.

[0071] The one in Fig. The embodiment shown in 3A essentially corresponds to the one described in the Fig. The embodiment of a component 10 shown in Figure 2B is different. In contrast, the first insulating layer 1I and the second insulating layer 2I have local vertical protrusions 3H and / or vertical depressions 2T. The local depressions 3T and / or the local protrusions 3H are arranged, in particular, in a cavity 12H, wherein the cavity 12H is arranged laterally between the subregions 1KP and 1KN of the first contact layer 1K or between the subregions 2KP and 2KN of the second contact layer 2K. The subregions 1KP and 1KN or 2KP and 2KN can be assigned to different electrical polarities of the component 10. The vertical protrusions 3H and / or depressions 3T in the cavity 12H effectively prevent electrical breakdown.

[0072] According to the Fig. 3A can ensure the dielectric strength by maintaining a minimum lateral distance between through-contacts 1D or 2D, or between subregions 1KP and 1KN of the first contact layer 1, or between subregions 2KP and 2KN of the second contact layer 2. The dielectric strength can be improved by the presence of the cavity 12H, which is filled, in particular, with air or an inert gas. If bonding is carried out in a vacuum environment, the cavity can be a vacuum-like space, which is particularly resistant to dielectric strength. Furthermore, the dielectric strength of the component 10 can be additionally increased by the presence of the local depressions 3T and / or the local protrusions 3H.

[0073] The one in Fig. The embodiment shown in 3B corresponds essentially to that shown in the Fig. 3A shows an embodiment of a component 10. In contrast, the first insulating layer 1I has only one or more raised areas 3H. The second insulating layer 2I has at least one or more recesses 3T. In particular, the vertical raised area 3H extends into the recess 3T.

[0074] The one in Fig. The embodiment shown in 3C essentially corresponds to the one described in the Fig. 3A shows an embodiment for a component 10. In contrast, the first insulating layer 1I and the second insulating layer 2I can only have local depressions 3T.

[0075] In all embodiments, the intermediate regions 1ZB or 2ZB can have a lateral width between 1 µm and 10 µm inclusive, for example, between 1 µm and 4 µm inclusive, or between 4 µm and 10 µm inclusive. In particular, the lateral distance between the subregions of the contact layers 1K or 2K is at least 1 µm, preferably at least 4 µm or at least 7 µm. The cavity 12H between the subregions of the first contact layer 1K or the second contact layer 2K can have a lateral width between 1 µm and 20 µm inclusive, for example, between 2 µm and 8 µm inclusive, or between 8 µm and 20 µm inclusive. The first contact layer 1K and / or the second contact layer 2K can have a vertical layer thickness between 2 nm and 20 nm inclusive, for example between 2 nm and 10 nm inclusive or between 10 nm and 20 nm inclusive.The local depression 3T and / or the local elevation 3H can have a vertical extent between inclusive 2 nm and 30 nm, approximately between inclusive 2 nm and 20 nm or between inclusive 2 nm and 10 nm.

[0076] The one in Fig. The embodiment shown in section 4 essentially corresponds to the one described in the Fig. The embodiment shown in Figure 1A is for a first component 1 or for a second component 2. In contrast, the contact layer 1K / 2K has a continuous subregion 1KR / 2KR which, in particular, does not cover any of the through-contacts 1D / 2D. The continuous subregion 1KR or 2KR can be electrically neutral. In other words, the continuous subregion 1KR or 2KR is specifically not designed for electrical contacting the first component 1 or the second component 2 or the component 10.

[0077] The first contact layer 1K can have a plurality of further subregions 1KP and 1KN. The further subregions 1KP and 1KN are each completely enclosed laterally by an intermediate region 1ZB. The first insulating layer 1I is freely accessible within the intermediate region 1ZB. In other words, the first insulating layer 1I is not covered by the first contact layer 1K within the intermediate region 1ZB. The further subregions 1KP and 1KN are specifically assigned to different electrical polarities of component 1 and component 10, respectively. In a top view, the first subregion 1KP can completely cover a through-contact 1D, which, for example, can be configured as a p-side through-contact 1DP. The further subregion 1KN can, in a top view, completely cover another through-contact 1D, which is configured, in particular, as an n-side through-contact 1DN.

[0078] According to Fig. 4. The second component 2 with the second contact layer 2K can be used analogously to the one in the Fig. The component 1 shown in Figure 4 is designed with the first contact layer 1K. Since the contiguous subregion 1KR or 2KR laterally surrounds the subregions 1KN and 1KP or 2KN and 2KP and can be electrically neutral, the electrical dielectric strength of the component 10 can be significantly increased. Reference symbol list 10 building elements 1 first component 1D first contact 1DN first through contact first polarity 1DP first through contact second polarity 1F Surface of the first component 1H Main body of the first component 1I first insulation layer 1IF exposed area of ​​the first insulation layer 1K first contact layer 1KF surface of the first contact layer 1KN subregion of first polarity of the first contact layer 1KP subregion of the second polarity of the first contact layer 1KR further subregion of the first contact layer 1ZB Intermediate range 12 Connection plane / common interface 12H cavity 12S stage / stage transition 2 second component 2D second through contact 2DN second through-contact first polarity 2DP second through contact second polarity 2F Surface of the second component 2H Main body of the second component 2I second insulation layer 2IF exposed area of ​​the second insulation layer 2K second contact layer 2KF surface of the second contact layer 2KN subregion of first polarity of the second contact layer 2KP subregion of the second polarity of the second contact layer 2KR further subregion of the second contact layer 2ZB Intermediate range 3H local increase of the first / second insulation layer 3T local deepening of the first / second insulation layer 4 carriers 41 Supports of the first component 42 supports of the second component 5 Semiconductor bodies of the first component 51 first semiconductor layer 52 second semiconductor layer 53 active zone 6 Semiconductor bodies of the second component 61 first semiconductor layer 62 second semiconductor layer 63 active zone 7 Passivation layer 8 Connection layer

Claims

[1] Method for producing a mechanical and electrical connection between a first component (1) and a second component (2) comprising the following steps: - Providing the first component with a partially exposed first insulating layer (1I), a plurality of first through-contacts (1D) and an exposed, partially structured and partially planarized first contact layer (1K), wherein the first through-contacts are each laterally enclosed by the first insulating layer and the first contact layer partially covers the first insulating layer and completely covers the first through-contacts; - Providing the second component with a partially exposed second insulating layer (2I), a plurality of second through-contacts (2D), and an exposed, partially structured and partially planarized second contact layer (2K), wherein the second through-contacts are each laterally enclosed by the second insulating layer, and the second contact layer partially covers the second insulating layer and completely covers the second through-contacts; and - Joining the components in such a way that the contact layers overlap in top view, whereby the components are mechanically and electrically connected to each other at the partially planarized contact layers (1K, 2K) by means of a direct bonding process, wherein - an exposed surface (1F) of the first component (1) is formed exclusively from surfaces of the first contact layer (1K) and the first insulating layer (1I), - an exposed surface (2F) of the second component (2) is formed exclusively from surfaces of the second contact layer (2K) and the second insulating layer (2I), and - when the components (1, 2) are joined, a common interface (12) is formed between the components (1, 2), wherein the common interface (12) is a common connection plane formed exclusively by the overlap of the planarized surfaces of the first and second contact layers (1K, 2K). [2] Method according to the preceding claim, in which the first contact layer (1K) extends vertically at least locally over exposed areas (1IF) of the first insulating layer (1I), wherein the exposed areas are immediately adjacent laterally to the first contact layer (1K), and / or in which the second contact layer (2K) extends vertically at least locally over exposed areas (2IF) of the second insulating layer (2I), with the exposed areas being immediately adjacent laterally to the second contact layer (1K). [3] Method according to any of the preceding claims, wherein the components (1, 2) each have a main body (1H, 2H), the main body comprising a support (4, 41, 42) and / or a semiconductor body (5, 6). [4] Method according to any of the preceding claims, wherein the first insulating layer (1I) and / or the second insulating layer (2I) are at least partially planarized. [5] Method according to any of the preceding claims, wherein the first insulating layer (1I) and / or the second insulating layer (2I) are / is planarized in certain areas and have / has local depressions (3T) or local elevations (3H) in certain areas. [6] Method according to any of the preceding claims, wherein the first contact layer (1K) and the second contact layer (2K) each have a laterally extending planarized surface (1KF, 2KF) with a mean roughness of at most 3 nm. [7] Method according to any of the preceding claims, wherein the through-contacts (1D, 2D) are formed from a metal and the contact layers (1K, 2K) are formed from a transparent electrically conductive material. [8] Method according to one of the preceding claims, wherein the mechanical connection between the first component (1) and the second component (2) is based on van der Waals interactions, wherein the first contact layer (1K) is directly adjacent to the second contact layer (2K) and a common interface (12) is formed between the partially planarized contact layers (1K, 2K) which is free of a bonding material. [9] Method according to any of the preceding claims, wherein the first contact layer (1K) and the second contact layer (2K) have a plurality of laterally spaced subregions (1KN, 1KP, 1KR, 2KN, 2KP, 2KR), wherein intermediate regions (1ZB, 2ZB) are arranged in lateral directions between the subregions and the first insulating layer (1I) or the second insulating layer (2I) is exposed in the intermediate regions. [10] Method according to one of the preceding claims, wherein cavities (12H) are formed in a vertical direction between the first component (1) and the second component (2). [11] Component (10) comprising a first component (1) and a second component (2), wherein - the first component has a first insulating layer (1I), a plurality of first through-contacts (1D) and a partially structured contact layer (1K), wherein the first through-contacts are each laterally enclosed by the first insulating layer and the first contact layer partially covers the first insulating layer and completely covers the first through-contacts, - the second component has a second insulating layer (2I), a plurality of second through-contacts (2D) and a region-structured second contact layer (2K), wherein the second through-contacts are each laterally enclosed by the second insulating layer and the second contact layer partially covers the second insulating layer and completely covers the second through-contacts, and - a mechanical and electrical connection is formed between the components at the contact layers (1K, 2K), the connection being based on van der Waals interactions. [12] Component (10) according to the preceding claim, in which cavities (12H) are formed in a vertical direction between the first component (1) and the second component (2), - wherein the cavities each have the shape of a step (12S) in cross-sectional view, or - wherein the cavities each laterally enclose a sub-region (1KN, 1KP, 2KN, 2KP) of the contact layers (1K, 2K) and wherein the sub-region completely covers at least one of the through-contacts (1D, 2D). [13] Component (10) according to claim 11, wherein - at least one cavity (12H) is formed in a vertical direction between the first component (1) and the second component (2), - the cavity is located in a lateral direction between two adjacent subregions (1KN, 1KP, 1KR, 2KN, 2KP, 2KR) of the contact layers (1K, 2K), and - the cavity is formed so wide that an electrical breakdown between the two adjacent subregions is prevented. [14] Component (10) according to the preceding claim 11, wherein the first insulating layer (1I) and / or the second insulating layer (2I) has / has at least one local depression (3T) or at least one local elevation (3H), wherein the local depression or elevation is formed in a cavity (12H) between the components (1, 2). [15] Component (10) according to the preceding claim, wherein the local elevation of one insulating layer (1I, 2I) extends into the local depression of the other insulating layer (1I, 2I). [16] Component (10) according to one of claims 11 to 15, wherein the first contact layer (1K) or the second contact layer (2K) has a connected subregion (1KP, 1KR, 2KP, 2KR) and several further subregions (1KN, 1KP, 2KN, 2KP), wherein the further subregions are each enclosed in lateral directions by the connected subregion. [17] Component (10) according to the preceding claim, wherein the connected subregion (1KP, 2KP) is assigned to a first electrical polarity of the component and the further subregions (1KN, 2KN) are assigned to a second electrical polarity of the component different from the first electrical polarity. [18] Component (10) according to claim 16, wherein - the contiguous subregion (1KR, 2KR) is electrically neutral, - some of the other subregions (1KP, 2KP) are assigned to a first electrical polarity of the component, and - some of the other sub-regions (1KN, 2KN) are assigned to a second electrical polarity of the component that differs from the first electrical polarity. [19] Component (10) according to claim 14, in which the cavity (12H) is formed in a branched or stepped manner by the presence of the local depression (3T) or elevation (3H) of the first and / or the second insulating layer (1I, 2I). [20] Component (10) according to claim 11, wherein a common interface (12) is formed between the components, the common interface (12) being a common connection plane (12) formed exclusively by overlapping the planarized surfaces of the first and second contact layers (1K, 2K).

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