Method for producing an optoelectronic component

Abstract

Method for producing an optoelectronic component (10) comprising the following steps: - Providing a carrier (100) with an optoelectronic semiconductor chip component (200) arranged above a top side (101) of the carrier (100); - arranging a first potting material (310) over the upper side (101) of the carrier (100), wherein the first encapsulation material (310) is arranged over the upper side (101) of the carrier (100) in such a way that the side surfaces (203) of the optoelectronic semiconductor chip component (200) are wetted by the first encapsulation material (310); - Arranging a second potting material (320) over the first potting material (310), wherein the second potting material (320) has a higher density than the first potting material (310); - applying a force to the first potting material (310) and the second potting material (320) such that the second potting material (320) migrates towards the top side (101) of the carrier (100), wherein a first layer (410) comprising the second potting material (320) is formed over the upper side (101) of the carrier (100), and a second layer (420) comprising the first potting material (310) is formed over the first layer (410), wherein the side surfaces (203) of the optoelectronic semiconductor chip component (200) are not covered by the second encapsulation material (320) after the force has been applied.

Description

The present invention relates to a method for producing an optoelectronic component.Optoelectronic components in which an optoelectronic semiconductor chip is arranged on a top side of a carrier and is embedded in a potting material are known from the prior art.US 2008 / 0 218 072 A1 describes a method for producing a light-emitting semiconductor device, in which particles applied with a potting material sink as far as a further layer of a potting material.EP 2 362 713 A2 describes a method for producing a light-emitting device, in which a potting material is lowered by centrifugation into a further potting material.An object of the present invention is to specify a method for producing an optoelectronic component. This object is achieved by a method having the features of the independent claim. Various refinements are specified in the dependent claims.A method for producing an optoelectronic component comprises steps for providing a carrier having an optoelectronic semiconductor chip component arranged over a top side of the carrier, for arranging a first potting material over the top side of the carrier, for arranging a second potting material over the first potting material, wherein the second potting material has a higher density than the first potting material, and for applying a force to the first potting material and the second potting material in such a way that the second potting material migrates in the direction of the top side of the carrier.Advantageously, this method makes it possible to arrange the second potting material close to the top side of the carrier in the optoelectronic component obtainable by the method, even though the second potting material is only applied after the first potting material. The application of the second potting material only after the application of the first potting material can advantageously prevent the second potting material from wetting regions of the carrier or of the optoelectronic semiconductor chip component in which wetting by the second potting material is undesirable. A further advantage of the method is that during the migration of the second potting material in the direction of the upper side of the carrier, particles possibly embedded in the second potting material are entrained with the second potting material during the action of the force and thus also migrate in the direction of the upper side of the carrier.In one embodiment of the method, the action of the force is effected by centrifuging the carrier. Advantageously, a force of adjustable magnitude directed in the direction of the upper side of the carrier can thereby be exerted on the first potting material and the second potting material.The first potting material is arranged above the top side of the carrier in such a way that side faces of the optoelectronic semiconductor chip component are wetted by the first potting material. Advantageously, the wetting of the side surfaces of the optoelectronic semiconductor chip component by the first potting material can prevent or at least limit a wetting of the side surfaces of the optoelectronic semiconductor chip component by the second potting material.In one embodiment of the method, the second potting material is arranged before the first potting material has cured. Advantageously, this makes it possible for the second potting material to migrate through the first potting material in the direction of the upper side of the carrier during the centrifugation of the carrier.The action of the force is carried out in such a way that a first layer comprising the second potting material is formed over the upper side of the carrier, and a second layer comprising the first potting material is formed over the first layer. Advantageously, the method thereby makes it possible, in the optoelectronic component obtainable by the method, to form the first layer comprising the second potting material below the second layer comprising the first potting material, even though the second potting material is only applied after the first potting material.In one embodiment of the method, it comprises a further step of arranging a wavelength-converting material over the second layer. The wavelength-converting material can be configured to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip component at least partially into electromagnetic radiation of a different wavelength.In one embodiment of the method, the wavelength-converting material is arranged before the second layer has cured. This advantageously makes it possible for the wavelength-converting material and / or wavelength-converting particles contained in the wavelength-converting material to sink at least partially into the second layer.In one embodiment of the method, the wavelength-converting material is arranged after the second layer has cured. Advantageously, this prevents the wavelength-converting material and / or wavelength-converting particles contained in the wavelength-converting material from sinking into the second layer. This ensures that the wavelength-converting material remains above the second layer in the optoelectronic component obtainable by the method.In one embodiment of the method, the wavelength-converting material comprises a silicone and wavelength-converting particles embedded in the silicone. The wavelength-converting particles can be configured to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip component of the optoelectronic component obtainable by the method at least partially into electromagnetic radiation of a different wavelength.In one embodiment of the method, the first potting material comprises a silicone. In this case, for example, the first potting material forming the second layer and the wavelength-converting material arranged above the second layer may comprise the same matrix material. This can make it possible, for example, for wavelength-converting particles contained in the wavelength-converting material to migrate from the wavelength-converting material into the first potting material of the second layer.In one embodiment of the method, a further step is carried out after the centrifuging for removing at least a part of the first potting material. Advantageously, in the optoelectronic component obtainable by the method, substantially only the second potting material then remains.In one embodiment of the method, the first potting material comprises a solvent. The solvent is removed by evaporation. Advantageously, this represents a simple possibility for removing at least a part of the first potting material after centrifugation.Another possibility is to wash off at least a part of the first potting material after centrifugation. In this case, the first potting material can comprise a silicone oil, for example.In one embodiment of the method, the second potting material comprises a silicone. In this case, the second potting material can have, for example, the same matrix material as the first potting material.In one embodiment of the method, the second potting material comprises embedded particles. Advantageously, in this method, the embedded particles are carried along in the second potting material during the centrifugation of the carrier and thereby migrate with the second potting material in the direction of the upper side of the carrier. In this method, the particles embedded in the second potting material can thus advantageously also be moved in the direction of the upper side of the carrier if the embedded particles are, for example, so small that sedimentation of the embedded particles is not possible.In one embodiment of the method, the second potting material comprises between 30 weight percent and 50 weight percent embedded TiO 2- particles having an average diameter between 100 nm and 300 nm. Potting material with embedded particles of this type is advantageously well suited for producing optically reflective layers.In one embodiment of the method, the first potting material has a density of between 1 g / cm 3 and 1.3 g / cm 3.The second potting material has a density between 1.4 g / cm 3 and 2.2 g / cm 3. Advantageously, the second potting material thereby has a higher density than the first potting material. This allows the second potting material to migrate towards the top side of the carrier during centrifugation of the carrier.In one embodiment of the method, the optoelectronic semiconductor chip component comprises an optoelectronic semiconductor chip. The optoelectronic semiconductor chip can be, for example, a light-emitting diode (LED) chip.In one embodiment of the method, a further step is carried out after the centrifugation for removing the carrier. As a result, the method advantageously enables the production of a chip-scale optoelectronic component which, in addition to the potting material, has no supporting components and has very small external dimensions.The above-described characteristics, features and advantages of this invention and the manner in which these are achieved become clearer and more clearly comprehensible in conjunction with the following description of the exemplary embodiments, which are explained in more detail in conjunction with the drawings. These are shown in a diagrammatic representation FIG. 1 shows a sectional side view of an optoelectronic semiconductor chip component arranged above a top side of a carrier; FIG. 2 shows the carrier and the optoelectronic semiconductor chip component after arranging a first potting material over the top side of the carrier; FIG. 3 shows the carrier and the optoelectronic semiconductor chip component after arranging a second potting material over the first potting material; FIG. 4 shows the carrier with the optoelectronic semiconductor chip component after centrifugation of the carrier; FIG. 5 shows a sectional side view of a carrier with optoelectronic semiconductor chip components arranged over its top side, a first potting material arranged over the top side of the carrier and a second potting material arranged over the first potting material; FIG. 6 shows the arrangement of carrier, optoelectronic semiconductor chip components, first potting material and second potting material after centrifugation of the carrier; FIG. 7 shows a further arrangement with a carrier, an optoelectronic semiconductor chip component, a first potting material arranged over an upper side of the carrier and a second potting material arranged over the first potting material; FIG. 8 shows this arrangement after centrifugation of the carrier; FIG. 9 shows a sectional side view of the arrangement after application of a wavelength-converting material; FIG. 10 shows a sectional side view of the arrangement after a sinking of wavelength-converting particles; FIG. 11 shows a sectional side view of a further arrangement having a carrier, optoelectronic semiconductor chip components arranged over an upper side of the carrier, a first potting material arranged over the upper side of the carrier and a second potting material arranged over the first potting material; FIG. 12 shows the arrangement after centrifugation of the carrier; FIG. 13 shows the arrangement after arranging a wavelength-converting material; FIG. 14 shows a further arrangement with a carrier, optoelectronic semiconductor chip components arranged over an upper side of the carrier, a first potting material arranged over the upper side of the carrier and a second potting material arranged over the first potting material; FIG. 15 shows the arrangement after centrifugation of the carrier; and FIG. 16 shows the arrangement after application of a lens layer.FIG. 1 shows a schematic sectional side view of a carrier 100 having an upper side 101. The carrier 100 can also be referred to as a substrate. The carrier 100 can be designed, for example, as a ceramic or metallic carrier or as a printed circuit board. The carrier 100 can also be part of a plastic housing.An optoelectronic semiconductor chip component 200 has been arranged on the top side 101 of the carrier 100. The optoelectronic semiconductor chip component 200 has a top side 201 and a bottom side 202 opposite the top side 201. Side faces 203 of the optoelectronic semiconductor chip component 200 extend between the top side 201 and the bottom side 202. The optoelectronic semiconductor chip component 200 is arranged on the upper side 101 of the carrier 100 in such a way that the lower side 202 of the optoelectronic semiconductor chip component 200 faces the upper side 101 of the carrier 100.In the example shown in FIG. 1, the optoelectronic semiconductor chip component 200 comprises only one optoelectronic semiconductor chip 210. In other variants, the optoelectronic semiconductor chip component 200 can comprise further components in addition to the optoelectronic semiconductor chip 210, for example a wavelength-converting element. The optoelectronic semiconductor chip 210 has at least one electrical contact surface 220 oriented toward the underside 202 of the optoelectronic semiconductor chip component 200. The electrical contact surface 220 can be fastened to the upper side 101 of the carrier 100, for example, by means of a solder connection or an electrically conductive adhesive connection. The optoelectronic semiconductor chip 210 may also have a plurality of electrical contact pads 220.The optoelectronic semiconductor chip 210 can be formed as a light-emitting semiconductor chip, for example as a light-emitting diode chip (LED chip). In the example shown in FIG. 1, the optoelectronic semiconductor chip 210 can be formed, for example, as a volume-emitting semiconductor chip. In this case, the optoelectronic semiconductor chip 210 emits electromagnetic radiation, for example visible light, at the top side 201 and at the side surfaces 203 of the optoelectronic semiconductor chip component 200 during operation. The optoelectronic semiconductor chip 210 can be configured, for example, as a sapphire flip chip.FIG. 2 shows the arrangement of FIG. 1 in a schematic illustration in a processing state temporally following the illustration of FIG. 1.A first potting material 310 has been arranged over the upper side 101 of the carrier 100. The first potting material 310 has been arranged next to the optoelectronic semiconductor chip component 200 and covers at least a part of the part of the top side 101 of the carrier 100 not covered by the optoelectronic semiconductor chip component 200. The first potting material 310 may have been applied, for example, by means of a metering method (dispensing).The first potting material 310 arranged above the top side 101 of the carrier 100 wets not only the top side 101 of the carrier 100 but also at least a part of the side faces 203 of the optoelectronic semiconductor chip component 200. Wetting of the side surfaces 203 of the optoelectronic semiconductor chip component 200 may be effected, for example, by the first potting material 310 being received on the side surfaces 203 of the optoelectronic semiconductor chip component 200 after the first potting material 310 has been arranged on the upper side 101 of the carrier 100. In this way, the first potting material 310 can wet the side surfaces 203 of the optoelectronic semiconductor chip component 200 even if the first potting material 310 does not fill the entire volume in the vicinity of the optoelectronic semiconductor chip component 200 above the top side 101 of the carrier 100 as far as the top side 201 of the optoelectronic semiconductor chip component 200. In this case, after being arranged over the upper side 101 of the carrier 100, the first potting material 310 does not form a flat layer but rather has a concave surface.The first potting material 310 can comprise a silicone, for example. It is expedient if the first potting material 310 comprises a clear silicone which is largely transparent to electromagnetic radiation emitted by the optoelectronic semiconductor chip 210 of the optoelectronic semiconductor chip component 200. The first potting material 310 may also comprise an epoxy. Alternatively, the first potting material 310 can also comprise, for example, a clear silicone mixed with a solvent, a silicone oil or merely a solvent. Suitable solvents are, for example, DI water.FIG. 3 shows the arrangement of FIG. 2 in a processing state temporally following the illustration of FIG. 2.A second potting material 320 has been arranged over the first potting material 310. The second potting material 320 may also be arranged, for example, by a metering method (dispensing).The arranging of the second potting material 320 over the first potting material 310 has taken place before the first potting material 310 has cured. The first potting material 310 is thus still flowable in the processing state shown in FIG. 3.The second potting material 320 has a higher density than the first potting material 310. For example, the first potting material 310 may have a density of between 1 g / cm 3 and 1.3 g / cm 3. The second potting material 320 may have a density of between 1.4 g / cm 3 and 2.2 g / cm 3 for example. In particular, the first potting material 310 may have a density of approximately 1.15 g / cm 3 for example, while the second potting material 320 may have a density of approximately 1.6 g / cm 3 for example.The second potting material 320 may comprise a silicone. If the first potting material 310 also comprises a silicone, the first potting material 310 and the second potting material 320 can comprise the same silicone. The second potting material 320 may also include an epoxy, for example the same epoxy as the first potting material 310.Additionally, the second potting material 320 may include embedded particles 325 that increase the density of the second potting material 320. For example, the second potting material 320 may have embedded light-reflecting particles 325, by means of which the second potting material 320 receives a white color. As light-reflecting particles 325, TiO 2- particles are possible, for example. These TiO 2- particles can have, for example, an average diameter between 100 nm and 300 nm. In particular, the TiO 2- particles can have, for example, an average diameter of approximately 200 nm. The second potting material 320 may have, for example, a proportion of between 30 percent by weight and 50 percent by weight, in particular, for example, a proportion of 40 percent by weight of such TiO 2- particles 325. In this case, the second potting material 320 may have a density of approximately 1.6 g / cm 3 for example.Alternatively, the second potting material 320 may also comprise light-absorbing particles 325 or other embedded particles or fillers.FIG. 4 shows a schematic view of the arrangement of FIG. 3 in a processing state temporally following the illustration of FIG. 3.The carrier 100 has been centrifuged in such a way that a force directed in a direction 105 to the upper side 101 of the carrier 100 has acted on the components arranged above the upper side 101 of the carrier 100. Under the influence of this force, the second potting material 320 has moved in the direction of the upper side 101 of the carrier 100. Since the second potting material 320 has a higher density than the first potting material 310, the second potting material 320 has at least partially displaced the first potting material 310 on the upper side 101 of the carrier 100. As a result, a first layer 410 having the second potting material 320 has formed over the upper side 101 of the carrier 100. A second layer 420 has formed over the first layer 410 and comprises the first potting material 310. Thus, an inversion of the arrangement of the first potting material 310 and the second potting material 320 has resulted. The first layer 410 and the second layer 420 are substantially flat layers having substantially planar tops.If the first potting material 310 and the second potting material 320 have a sufficiently large density difference, it may be possible to dispense with the centrifugation. In this case, the force of gravity acting on the first potting material 310 and the second potting material 320 may already be sufficient to drive the second potting material 320 in the direction of the upper side 101 of the carrier 100.In the example shown, the amount of the first potting material 310 arranged over the top side 101 of the carrier 100 and the amount of the second potting material 320 arranged over the first potting material 310 were dimensioned such that the first layer 410 formed from the second potting material 320 has a smaller thickness than the second layer 420 formed from the first potting material 310. The amount of the first potting material 310 and the second potting material 320 was also dimensioned such that the surface of the second layer 420 facing away from the top side 101 of the carrier 100 terminates substantially flush with the top side 201 of the optoelectronic semiconductor chip component 200. However, this is not absolutely necessary. The surface of the second layer 420 could also be arranged below the top side 201 of the optoelectronic semiconductor chip component 200. It is likewise possible for the first potting material 310 to cover the top side 201 of the optoelectronic semiconductor chip component 200 during the formation of the second layer 420.Since the first potting material 310 has already wetted the side faces 203 of the optoelectronic semiconductor chip component 200 before arranging the second potting material 320, the second potting material 320 could subsequently no longer wet the side faces 203 of the optoelectronic semiconductor chip component 200. As a result, the side surfaces 203 of the optoelectronic semiconductor chip component 200 are not covered by the second potting material 320, even after centrifugation.The first layer 410 comprising the second potting material 320 forms a thin reflective layer on the upper side 101 of the carrier 100. During operation of the optoelectronic semiconductor chip component 200, electromagnetic radiation emitted by the optoelectronic semiconductor chip component 200 in the direction of the top side 101 of the carrier 100 can be reflected at the first layer 410 and thereby be used. Since the side surfaces 203 of the optoelectronic semiconductor chip component 200 are not wetted by the reflective second potting material 320, emission of electromagnetic radiation at the side surfaces 203 of the optoelectronic semiconductor chip component 200 is not hindered.Centrifugation of the carrier 100 was performed prior to curing the first potting material 310 and the second potting material 320. Following the centrifuging and the forming of the first layer 410 comprising the second potting material 320 and the second layer 420 comprising the first potting material 310, further processing steps for curing the first potting material 310 and the second potting material 320 can be carried out. Curing can be effected, for example, by a thermal treatment and / or by irradiation with light.In another variant, it is possible to remove at least a part of the first potting material 310 and the second layer 420 formed from the first potting material 310 after centrifuging the carrier 100. In this case, for example, only the first layer 410 comprising the second potting material 320 can remain on the upper side 101 of the carrier 100. The removal of the first potting material 310 can be effected, for example, by evaporating the first potting material 310 or by washing off the first potting material 310. Evaporation of the first potting material 310 is possible, for example, if it comprises a solvent. Washing off the first potting material 310 is possible, for example, if it comprises a silicone oil.In the processing stage shown in FIG. 4, the arrangement shown in FIG. 4 forms an optoelectronic component 10. However, it is also possible to remove the carrier 100.Several variants and extensions of the production method described above with reference to FIGS. 1 to 4 are explained below. In this case, only the deviations from the method described above will be explained in the following. In addition, the above description also applies to the production methods illustrated below and the optoelectronic components obtainable by the production methods.FIG. 5 shows a schematic sectional side view of the carrier 100 with a plurality of optoelectronic semiconductor chip components 200 arranged above the top side 101 of the carrier 100. Between and next to the optoelectronic semiconductor chip components 200, the first potting material 310 has been arranged over the top side 101 of the carrier 100. The second potting material 320 has been arranged above the first potting material 310. Thus, the machining state shown in FIG. 5 corresponds to the machining state shown in FIG. 3.In contrast to the variant explained with reference to FIGS. 1 to 4, the optoelectronic semiconductor chip components 200 in the example shown in FIG. 5 each have, in addition to the optoelectronic semiconductor chip 210, a converter layer 230 partially embedding the optoelectronic semiconductor chip 210. In the example shown, the converter layer 230 covers the top side and the side surfaces of the optoelectronic semiconductor chips 210. The upper sides 201 and the side surfaces 203 of the optoelectronic semiconductor chip components 200 are thus formed by the converter layers 230 of the optoelectronic semiconductor chip components 200. The optoelectronic semiconductor chip components 200 thus represent examples of chip-scale packages. The converter layer 230 is provided in each optoelectronic semiconductor chip component 200 to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip 210 at least partially into electromagnetic radiation of a different wavelength.The carrier 100 is a temporary carrier 110 in the example shown in FIG. 5, which is removed at the end of the processing. The optoelectronic semiconductor chip components 200 are fastened to the upper side 101 of the carrier 100 by means of an adhesive film 120. The first potting material 310 has been disposed over the adhesive sheet 120.FIG. 6 shows a schematic illustration of the arrangement of FIG. 5 in a processing state temporally succeeding FIG. 5.The carrier 100 has been centrifuged in such a way that the second potting material 320 has moved in the direction 105 to the upper side 101 of the carrier 100. As a result, the first layer 410 comprising the second potting material 320 has again formed over the upper side 101 of the carrier 100. The second layer 420, which comprises the first potting material 310, has been formed over the first layer 410.In a processing step that follows the representation of FIG. 6 in time, the temporary carrier 100, 110 and the adhesive film 120 are detached. In addition, the body formed by the layers 410, 420 of the potting material 310, 320 is divided into a plurality of optoelectronic components 10 such that each optoelectronic component 10 comprises one of the optoelectronic semiconductor chip components 200. The dividing can take place before or after the detachment of the temporary carrier 110.With reference to FIGS. 7 to 10, a further variant of the production method is described below. FIG. 7 shows a schematic sectional side view of a process stage corresponding to the process stage shown in FIG. 3.In the variant shown in FIG. 7, the carrier 100 is formed by a housing body 130 with lead frame sections 140 embedded in the housing body 130. The package body 130 may also be referred to as a QFN package. The housing body 130 may include, for example, a plastic material. The case body 130 may be manufactured by, for example, a molding method (molding method). In this case, the lead frame sections 140 may have already been embedded in the housing body 130 during the formation of the housing body 130 by forming the lead frame sections 140.The housing body 130 has a cavity 160. A base region of the cavity 160 forms the upper side 101 of the carrier 100. At the base region of the cavity 160 forming the upper side 101 of the carrier 100, the lead frame sections 140 are partially exposed.In this example, the optoelectronic semiconductor chip component 200 comprises only one optoelectronic semiconductor chip 210 embodied as a volume-emitting sapphire chip. The optoelectronic semiconductor chip component 200 has been arranged on the top side 101 of the carrier 100 in the cavity 160 of the housing body 130. Subsequently, the first potting material 310 has been arranged over the top side 101 of the carrier 100. The first potting material 310 has at least partially wetted the side faces 203 of the optoelectronic semiconductor chip component 200. In addition, the first potting material 310 has at least partially wetted a housing wall 170 of the housing body 130 delimiting the cavity 160. Subsequently, the second potting material 320 has been arranged over the first potting material 310.FIG. 8 shows the arrangement of FIG. 7 in a processing state following in time.The carrier 100 has been centrifuged in such a way that the second potting material 320 has moved in the direction 105 to the upper side 101 of the carrier 100. As a result, the first layer 410 comprising the second potting material 320 has formed over the upper side 101 of the carrier 100. The second layer 420, which comprises the first potting material 310, has been formed over the first layer 410.An upper side of the second layer 420 facing away from the upper side 101 of the carrier 100 is not planar but is formed slightly concave in the example shown. By wetting the side surfaces 203 of the optoelectronic semiconductor chip component 200, the top side of the second layer 420 terminates approximately flush with the top side 201 of the optoelectronic semiconductor chip component 200. The cavity 160 of the housing body 130 is not completely filled by the optoelectronic semiconductor chip component 200 and the layers 410, 420 of the potting materials 310, 320.FIG. 9 shows a schematic sectional side view of the arrangement of FIG. 8 in a processing state temporally following the illustration of FIG. 8.A wavelength converting material 330 has been disposed over the second layer 420. The wavelength-converting material 330 can be arranged, for example, by a metering method (dispensing). The wavelength-converting material 330 is arranged above the second layer 420 and above the top side 201 of the optoelectronic semiconductor chip component 200 and forms a third layer 430. In the example shown, the amount of the wavelength-converting material 330 is dimensioned such that the void of the cavity 160 remaining after the filling of the first potting material 310 and the second potting material 320 is completely filled.The arranging of the wavelength-converting material 330 over the second layer 420 has taken place before the first potting material 310 of the second layer 420 has cured.The wavelength-converting material 330 comprises a matrix material and wavelength-converting particles 335 embedded in the matrix material. The matrix material can be a silicone, for example. It is expedient if the matrix material of the wavelength-converting material 330 is similar or the same as the first potting material 310. The wavelength-converting particles 335 of the wavelength-converting material 330 are configured to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip 210 of the optoelectronic semiconductor chip component 200 at least partially into electromagnetic radiation of a different wavelength.FIG. 10 shows the arrangement of FIG. 9 in a processing state temporally following the representation of FIG. 9.The wavelength-converting particles 335 contained in the wavelength-converting material 330 have sunk down as a result of sedimentation. A portion of the wavelength-converting particles 335 has sunk down to the top side 201 of the optoelectronic semiconductor chip component 200. A portion of the wavelength-converting particles 335 has sunk into the first potting material 310 of the second layer 420. Even a part of the wavelength-converting particles 335 may have sunk into the second potting material 320 of the first layer 410. In the third layer 430 arranged above the second layer 420, substantially only the matrix material of the wavelength-converting material 330 that may correspond to the first potting material 310 remains.FIG. 11 shows a schematic sectional side view of a processing stand corresponding to the illustration of FIG. 3 during the execution of a further variant of the production method described above.In this variant, the carrier 100 is again designed as a temporary carrier 110. An adhesive film 120 is again arranged on the upper side 101 of the temporary carrier 100, 110. A plurality of optoelectronic semiconductor chip components 200 are fastened to the upper side 101 of the carrier 100 by means of the adhesive film 120.In addition, a housing frame 150 is arranged on the upper side 101 of the carrier 100 and fixed by the adhesive film 120. The housing frame 150 may comprise, for example, a plastic material, for example an epoxy. The case frame 150 may be previously manufactured by, for example, a molding method (molding method).The housing frame 150 is formed as a grid with a regular arrangement of openings which form cavities 160. In the example shown, an optoelectronic semiconductor chip component 200 is arranged in each cavity 160 of the housing frame 150. The arrangement of the optoelectronic semiconductor chip components 200 on the top side 101 of the carrier 100 may be effected before or after the arrangement of the package frame 150 on the top side 101 of the carrier 100.In the example shown, the optoelectronic semiconductor chip components 200 only each have an optoelectronic semiconductor chip 210, which can be configured as a sapphire flip chip. The optoelectronic semiconductor chip components 200 could, however, also be configured differently.After arranging the package frame 150 and the optoelectronic semiconductor chip components 200, the first potting material 310 has been arranged over the top side 101 of the carrier 100. Thereafter, the second potting material 320 was arranged over the first potting material 310. The first potting material 310 has at least partially wetted the side surfaces 203 of the optoelectronic semiconductor chip components 200 and the housing walls 170 of the housing frame 150 delimiting the cavities 160, with the result that the second potting material 320 could no longer wet these surfaces.FIG. 12 shows a schematic sectional side view of the arrangement shown in FIG. 11 in a processing state temporally following the illustration of FIG. 11. The carrier 100 has been centrifuged in such a way that the second potting material 320, which has a higher density than the first potting material 310, has moved in the direction 105 to the upper side 101 of the carrier 100. As a result, the first layer 410 arranged above the top side 101 of the carrier 100 and the second layer 420 arranged above the first layer 410 have again been formed. The first layer 410 comprises the second potting material 320. The second layer 420 comprises the first potting material 310.FIG. 13 shows a schematic sectional side view of the arrangement shown in FIG. 12 in a processing position temporally following the representation of FIG. 12.Wavelength-converting material 330 has been arranged above second layer 420 and above upper sides 201 of optoelectronic semiconductor chip components 200. The wavelength-converting material 330 forms the third layer 430 and substantially completely fills the previously remaining empty spaces of the cavities 160 of the housing frame 150.In contrast to the variant of the production method described with reference to FIGS. 7 to 10, the wavelength-converting material 330 has been arranged only after the second layer 420 has cured. This prevents the wavelength-converting particles 335 included in the wavelength-converting material 330 from settling into the second layer 420.In a processing step that follows the representation of FIG. 13 in time, the temporary carrier 100, 110 and the adhesive film 120 are detached. In addition, the body formed by the layers 410, 420, 430 and the leadframe 150 is divided into a plurality of optoelectronic components 10 such that each optoelectronic component 10 comprises one of the optoelectronic semiconductor chip components 200. The dividing can take place before or after the detachment of the temporary carrier 110.FIG. 14 shows a schematic sectional side view of a processing stand corresponding to the illustration of FIG. 3 during the execution of a further variant of the production method.In the variant shown in FIG. 14, the carrier 100 is also designed as a temporary carrier 110. On the upper side 101 of the carrier 100, an adhesive film 120 is again arranged.A plurality of optoelectronic semiconductor chip components 200 have been arranged above the top side 101 of the carrier 100. In this exemplary variant of the production method, each optoelectronic semiconductor chip component 200 comprises an optoelectronic semiconductor chip 210 which is formed, for example, as a surface-emitting flip chip. A converter layer 230 is arranged on the radiation emission surface of the optoelectronic semiconductor chip 210, which converter layer is provided to convert at least a portion of the electromagnetic radiation emitted by the optoelectronic semiconductor chip 210 into electromagnetic radiation of a different wavelength. A cover 240 is disposed over the converter layer 230. The cover 240 can be designed, for example, as a glass plate. A surface of the cover 240 facing away from the converter layer 230 forms the top side 201 of the optoelectronic semiconductor chip component 200. The electrical contact pads 220 of the optoelectronic semiconductor chip 210 are embedded in each optoelectronic semiconductor chip component 200 in a molded body 250 which carries the light-emitting layer of the optoelectronic semiconductor chip 210. An underside of the molded body 250 facing away from the light-emitting layer of the optoelectronic semiconductor chip 210 forms the underside 202 of the optoelectronic semiconductor chip component 200. The electrical contact pads 220 are exposed on the underside 202 of the optoelectronic semiconductor chip component 200.After arranging the optoelectronic semiconductor chip components 200 over the top side 101 of the temporary carrier 100, 110, the first potting material 310 has been arranged over the top side 101 of the carrier 100. In this case, the first potting material 310 has at least partially wetted the side faces 203 of the optoelectronic semiconductor chip components 200. Subsequently, the second potting material 320 has been arranged over the first potting material 310.FIG. 15 shows a schematic sectional side view of the arrangement shown in FIG. 14 in a processing state temporally following the illustration of FIG. 14.The carrier 100 has been centrifuged in such a way that the second potting material 320 has moved in the direction 105 to the upper side 101 of the carrier 100. As a result, the first layer 410 and the second layer 420 arranged above the first layer 410 have again formed above the top side 101 of the carrier 100. The first layer 410 comprises the second potting material 320. The second layer 420 comprises the first potting material 310. The interface between the planar first layer 410 and the planar second layer 420 is situated approximately at the level of the converter layers 230 of the optoelectronic semiconductor chip components 200. The second layer 420 terminates approximately flush with the upper sides 201 of the optoelectronic semiconductor chip components 200.The body formed from the first layer 410 and the second layer 420 could now be detached from the temporary carrier 100, 110 and the adhesive film 120 and divided in order to obtain a plurality of optoelectronic components 10 each comprising an optoelectronic semiconductor chip component 200. However, the processing step described below can also be carried out beforehand.FIG. 16 shows a schematic sectional side view of the arrangement shown in FIG. 15 in a processing state temporally following the illustration of FIG. 15.A lens layer 440 has been arranged over the second layer 420. The lens layer 440 comprises a lens material 340. The lens material 340 is transparent to electromagnetic radiation emitted by the optoelectronic semiconductor chip components 200. The lens material 340 may include, for example, a silicone or an epoxy. The lens layer 440 may have been applied, for example, by means of a molding method (molding method).In the example shown, the lens layer 440 forms a convex optical lens 445 over each optoelectronic semiconductor chip component 200. These optical lenses 445 are configured to bundle electromagnetic radiation emitted by the optoelectronic semiconductor chip components 200. Another configuration of the optical lenses 445 is possible.In the processing steps following in FIG. 16, the temporary carrier 100, 110 and the adhesive film 120 are detached. In addition, the body formed by the first layer 410, the second layer 420 and the lens layer 440 is divided in such a way that each part forms an optoelectronic component 10 having an optoelectronic semiconductor chip component 200 and an optical lens 445. The dividing can take place before or after the detachment of the temporary carrier 100, 110.

Claims

Method for producing an optoelectronic component (10), comprising the following steps: - providing a carrier (100) having an optoelectronic semiconductor chip component (200) arranged over a top side (101) of the carrier (100); - arranging a first potting material (310) over the top side (101) of the carrier (100), wherein the first potting material (310) is arranged over the top side (101) of the carrier (100) in such a way that the side faces (203) of the optoelectronic semiconductor chip component (200) are wetted by the first potting material (310); - arranging a second potting material (320) over the first potting material (310), wherein the second potting material (320) has a higher density than the first potting material (310); applying a force to the first potting material (310) and the second potting material (320) in such a way that the second potting material (320) migrates in the direction of the top side (101) of the carrier (100), wherein a first layer (410) comprising the second potting material (320) forms over the top side (101) of the carrier (100), and a second layer (420) comprising the first potting material (310) forms over the first layer (410), wherein the side surfaces (203) of the optoelectronic semiconductor chip component (200) are not covered by the second potting material (320) after applying the force.The method of claim 1, wherein the applying of the force is performed by centrifuging the carrier (100).The method according to any one of the preceding claims, wherein the arranging of the second potting material (320) takes place before the first potting material (310) is cured.The method according to any of the preceding claims, wherein the method comprises the further step of: - arranging a wavelength converting material (330) over the second layer (420).The method of claim 4, wherein the disposing of the wavelength converting material (330) is performed before the second layer (420) is cured.The method of claim 4, wherein the disposing of the wavelength converting material (330) is performed after the second layer (420) is cured.The method of any one of claims 4 to 6, wherein the wavelength converting material (330) comprises a silicone and wavelength converting particles (335) embedded in the silicone.The method of any preceding claim, wherein the first potting material (310) comprises a silicone.Method according to one of the preceding claims, wherein after the application of the force the following further step is carried out: - removing at least a part of the first potting material (310).The method of claim 9, wherein the first potting material (310) comprises a solvent, wherein the solvent is removed by evaporation.The method of any preceding claim, wherein the second potting material (320) comprises a silicone.The method of any preceding claim, wherein the second potting material (320) comprises embedded particles (325).The method of claim 12, wherein the second potting material (320) comprises between 30 weight percent and 50 weight percent embedded TiO 2- particles (325) having an average diameter between 100 nm and 300 nm.The method of any preceding claim, wherein the first potting material (310) has a density between 1 g / cm 3 and 1.3 g / cm 3 wherein the second potting material (320) has a density between 1.4 g / cm 3 and 2.2 g / cm 3.Method according to one of the preceding claims, wherein the optoelectronic semiconductor chip component (200) comprises an optoelectronic semiconductor chip (210).Method according to any of the preceding claims, wherein after the application of the force the following further step is carried out: - removing the carrier (100).

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