DIE HOUSE AND METHOD FOR MAKING A DIE HOUSE

Abstract

[00156] A die housing is provided. The die housing (230) comprises a laminated support (106) comprising at least one recess (116), a die (102) with a front and a back and a front metallization (104F), wherein the die (102) is arranged in the at least one recess (116) with its front facing a bottom of the at least one recess (116), a first encapsulation material (108) that partially encapsulates the die (102), covering at least the back, a second encapsulation material (112) that covers the front metallization (104F), and an adhesion promoter material (222) between the front metallization (104F) and the second encapsulation material (112) and in direct physical contact with the second encapsulation material (112) and the front metallization (104F).

Description

Technical field

[0001] Various embodiments generally relate to a die housing and a method for manufacturing a die housing. background

[0002] In die packages, especially laminated die packages, for example double-sided chip embedding (CE) products, the adhesion between a metallization of a semiconductor die / chip and an encapsulation material (for example, a PCB laminate material) may be weaker than desired.

[0003] Attempts to solve the problem include, for example, adding an additional polyimide layer to the metallization. However, this necessitates drilling through the polyimide passivation and removing any residue with a desmear process (a process for removing smearing) before a subsequent plating process, which can be complicated or even impossible. Furthermore, the polyimide may only be applied to the die's front face and therefore may not be able to provide a solution for a die package containing two or more dies mounted with different orientations—that is, one die with its front facing a support and the other with its back facing the support.

[0004] Another attempt involved so-called copper roughening, which means roughening a copper surface. This was possible because the dies were first diffusion-bonded onto a copper (Cu) substrate, and the substrate with the chip could be subjected to, for example, a wet chemical roughening process before the lamination process without damaging the substrate. However, other chip embedding processes may be more complicated. For example, roughening a die's front face (or more generally, the side facing down during bonding) may only be possible after an initial lamination process, but it can be risky because the laminate material may only be partially cured after the initial curing and consequently may be damaged during the roughening process.Furthermore, it may be impossible to perform the roughening on the back of the die (or more generally, the side that faces downwards during bonding).

[0005] For a current CE chip embedding process flow, there is no actual solution for increasing adhesion between the two die surfaces, i.e., a front and a back.

[0006] US patent 2017 / 0154856 A1 discloses a die package embedded in a cavity of a laminated substrate. DE patent 10 2016 107 031 A1 discloses a chip cavity structure with a laminate. SUMMARY

[0007] A die package is provided. The die package can include: a laminated substrate including at least one recess, a first die with a front and a back and a front metallization on the front and a back metallization on the back, wherein the first die is arranged in the at least one recess, a first encapsulation material that partially encapsulates the first die, covering at least the front metallization or the back metallization, and an adhesion promoter material between the metallization covered by the first encapsulation material and the first encapsulation material, and in direct physical contact with the first encapsulation material and the metallization covered by the first encapsulation material. Brief description of the drawings

[0008] In the drawings, identical reference numerals generally refer to the same parts in the different views. The drawings are not necessarily to scale; instead, the emphasis is generally placed on illustrating the principles of the invention. The following description details various embodiments of the invention with reference to the following drawings, in which the following applies: Fig. Figure 1 illustrates a method for forming a die housing; Fig. Figure 2 illustrates a method for forming a die housing according to various embodiments; Fig. Figure 3 illustrates a method for forming a die housing according to various embodiments; Fig. Figure 4 shows aspects of a die housing according to different embodiments; Fig. 5A and Fig. Figure 5B shows die housings according to different embodiments; Fig. Figure 6 shows a process flow of a method for manufacturing a die housing; and Fig. Figure 7 shows a process flow of a method for manufacturing a die housing. Description

[0009] The following detailed description refers to the accompanying drawings, which show specific details and embodiments in which the invention can be implemented.

[0010] The word "exemplary" is used here to mean "serving as an example, instance, or illustration." Any embodiment or design described here as "exemplary" is not necessarily to be considered preferred or advantageous over other embodiments or designs.

[0011] The word "over," used in connection with a deposited material formed "over" a side or surface, can be used here to mean that the deposited material can form "directly on," for example, in direct contact with, the side or surface in question. The word "over," used in connection with a deposited material formed "over" a side or surface, can also be used here to mean that the deposited material can form "indirectly on" the side or surface in question, with one or more additional layers arranged between the side or surface and the deposited material.

[0012] Various aspects of the disclosure are provided for devices and various aspects of the disclosure are provided for methods. It is understood that the basic properties of the devices also apply to the methods and vice versa. For the sake of brevity, a duplicate description of such properties may therefore be omitted.

[0013] In current CE-compliant products, a major challenge can be adhesion between a laminate material and copper metallization on the back and front of the die. It is well known that adhesion between relatively smooth copper and a PCB laminate material is relatively weak.

[0014] Due to a process flow used in double-sided via chip embedding products, a Cu roughening process used in the PCB industry to ensure good adhesion between a chip metallization and a PCB laminate material cannot be used for both sides of the embedded die.

[0015] Fig.Figure 1 shows a schematic drawing illustrating a current second-generation CE process. A prefabricated core layer 106 with openings 116 for embedded dies 102 is fabricated, and a UV deposition tape 118 (or similar) is laminated onto one underside of the core layer 106. The dies 102 are placed within the cavity 116 and bonded to the tape, such that a back copper 104B of one of the dies 102, e.g., an HS MOSFET, a front metallization 104F of another of the dies 102, e.g., an LS MOSFET, and a front metallization 104F of a third of the dies, e.g., a driver die 102, face the tape 118 (top panel). After the placement of the dies 102, a prepreg 108 and a copper foil 110 are laminated onto a top surface of the core layer 106 (second field) and the tape 118 is removed (third field).After this process, the back metallization 104B of the LS-MOSFET 102 and the front metallization 104F of the LS-MOSFET 102 are covered by the prepreg 108 and the copper layers 110 and are therefore inaccessible for roughening. In the current process flow and available PCB processes, this is the first possible stage to perform roughening of the back 104B of the HS-MOSFET 102, the front 104F of the LS-MOSFET, and the front 104F of the driver. However, because the prepreg 108 is not fully cured at this stage, there is a high risk of cracking, delamination, and other problems during handling and wet chemical processing.

[0016] Various embodiments describe techniques for improving adhesion in a double-sided chip embedding product (CE).

[0017] Various embodiments provide a cost-effective solution to improve chip-case interfaces, i.e., adhesion at the interfaces, which can be used in these chip embedding packages.

[0018] In various embodiments, the process for improving adhesion between the die and the laminate material is split into two processes, allowing both sides of the die (i.e., the front and back) to be treated with a single process that enhances adhesion. The adhesion-promoting processes can be performed either at the wafer level or during a PCB manufacturing process.

[0019] In various embodiments, processes not used in normal chip embedding processes or in the PCB industry can be employed to improve adhesion between a die metallization and a package material in chip embedding packages. This can primarily involve a combination of known existing adhesion promoters or protective layers with the CE marking. 2 -process flow. Specifically, the process for improving adhesion between the die front and back with the laminate is carried out in two steps. These new processes, which are not currently used in CE packages, can be applied either between front-end processes or between embedding processes, which are described in more detail below.

[0020] In various embodiments, a process to improve adhesion in the wafer plane phase can be applied, either to the die front or the die back, or after die placement when the dies are placed within the core layer and bonded to the tape (die back), or after soft lamination when the dies are attached to the Cu core with a semi-prepreg material (die front).

[0021] Improved adhesion can be achieved in various embodiments by modifying the die metallization surface through chemical activation or by protecting it with a temporary or thin permanent surface protective layer. Possible processes for improving adhesion include chemical activation of the chip surface through chemical reaction, preventing copper (Cu) reoxidation and stabilizing a thin, well-adhering copper oxide (CuO) layer, removing the oxide layer and protecting the Cu surface, surface pretreatment using, for example, plasma to activate the surface by reducing the surface energy, and / or mechanical interaction (prior art, also known as Cu roughening or more generally, roughening), which creates a surface area between an encapsulation material (e.g.,This can increase the adhesion between the resin and the copper, and can also lead to interlocking of the resin with copper. An adhesion promoter material, which can be applied, for example, as a surface coating using atomic layer deposition or an A2 process, can be organic or inorganic. It can, for example, contain or consist of silane.

[0022] Fig. Figure 2 illustrates a method for forming a die housing according to various embodiments.

[0023] The method can involve placing a first die 102, having a front and a back surface and a front surface metallization 104F on the front and a back surface metallization 104F on the back, into at least one recess 116 of a laminated substrate 106 on a removable substrate 118. This is shown in the upper field of Fig. 2 shown.

[0024] The first die 102 can, for example, be a semiconductor die that can form a (power) semiconductor device, such as a (power) transistor or the like. A front face of the die 102 can include a control contact, and both the front and back faces can contain controlled contacts.

[0025] The in Fig. The embodiment shown in Figure 2 can include three dies 102, two of which include both a front-side metallization 104F and a back-side metallization 104F. The die 102 on the left can be a low-side MOSFET, the die 102 in the middle can be a high-side MOSFET, and the die 102 on the right can be a driver die for the two MOSFETs.

[0026] More generally, the method may optionally further include arranging a second die 102 with a front and a back and a front metallization 104F on the front and a back metallization 104B on the back in the at least one recess 116, which may be the same recess 116 in which the first die 102 is arranged, or a separate recess 116.

[0027] In various embodiments, the second die 102 can be arranged with its rear side facing the underside of the recess 116, while the first die 102 is arranged in the at least one recess 116 with its front side facing the underside of the at least one recess 116. In other words, the first die 102 and the second die 102 can be arranged with different orientations, one being reversed relative to the other. In various embodiments, the first die 102 and the second die 102 can be arranged with the same orientation; in other words, both front sides face the removable support 118, or both rear sides face the removable support 118.

[0028] The front face metallization 104F and / or the back face metallization 104B (also referred to as the metallizations 104) may contain or consist of copper. Another reference system for the metallizations 104 takes into account how the die 102 is positioned within the recess 116: the metallization 104 facing (i.e., downwards) the removable support 118 may be designated metallization 104D, and the metallization 104 facing away from (i.e., upwards) the removable support 118 may be designated metallization 104U.

[0029] The recess 116 can extend completely through the laminated substrate 106. The laminated substrate 106 can contain or consist of a substrate material for a printed circuit board (PCB), for example FR4, or it can contain or consist of a copper laminate or any other known suitable laminated substrate material.

[0030] The process can also be used to surface-treat the metallization facing away from the removable support 118 (in Fig. 2. This includes the backside metallization 104B of the leftmost die 102 and the frontside metallization 104F of the middle die 102, both of which now form metallizations 104U. The surface treatment, as in Fig. 2 shown in the second field, may involve the formation of an adhesion promoter material 222 on the metallization 104U, which faces away from the removable support 118.

[0031] The adhesion promoter material 222 can, in various embodiments, contain or consist of at least one inorganic material, for example ZnCr or aluminum oxide, which is applied, for example, using atomic layer deposition. In various embodiments, the adhesion promoter material 222 can contain or consist of at least one organic material, for example an epoxide, a silane, benzotriazole, imidazole, or benzimidazole.

[0032] The adhesion promoter material 222 can be selectively applied to the metallization 104U or it can be applied to structures other than the metallization 104U, for example, the semiconductor material of the die 102 and / or the laminated support 106. Adhesion between the semiconductor material 108 and / or between the laminated support 106 and the encapsulation material 108 can also be enhanced.

[0033] The adhesion promoter material 222 can be applied, for example, by spraying or dipping. If the adhesion promoter material 222 is applied only to the metallization 104U and not to the other materials, a mask may be used.

[0034] In various embodiments, the adhesion promoter material 222 can be used in the case that two or more dies 102 are present (as in Fig. 2) to which two or more metallizations of 104U are applied simultaneously or at least during the same process.

[0035] The method can further include partial encapsulation of the first die 102 such that the first encapsulation material 108 covers at least the metallization 104U which faces away from the removable support 118.

[0036] The first encapsulation material 108 can, for example, include or consist of a material typically used for PCB lamination, such as a prepreg laminate material. In various embodiments, the initial lamination process can result in a partially cured state and may require a final curing process to achieve its ultimate stability. In other embodiments, the first encapsulation material 108 can be fully cured directly after lamination.

[0037] In various embodiments, a metal layer 110, e.g. a copper layer, can be arranged over the first encapsulation material 108 during the same process as the first encapsulation material 108.

[0038] The method may further include removing the removable support 118 in order to expose at least part of the metallization facing the removable support 118, as shown in the upper field of the second page. Fig. Figure 2 shows the front face metallization 102F of the first die 102 (of the low-side MOSFET), the back face metallization 104B of the middle die 102 (of the high-side MOSFET) and the front face metallization 102F of the third die 102 (of the driver die) exposed.

[0039] Removal can be achieved, for example, by illuminating the removable carrier 118 with ultraviolet light if a UV-removable adhesive was used for its application. Other suitable known techniques can be used for removing the removable carrier 118, or a tape with sufficiently low adhesion can be used as the removable carrier 118.

[0040] The exposed part of the metallization 104D can, in various embodiments, represent a full surface of the metallization 104D, as for example in Fig. 2 is shown, or only include a fraction of the metallization 104D.

[0041] In various embodiments, the metallization 104D may be free of the adhesion promoter material 222 and may not be roughened. In various embodiments, the metallization 104D may be roughened, for example in connection with Fig. 3 is described.

[0042] If the exposed metallization 104D neither contains the adhesion promoter material nor is roughened, the process can further surface-treat the exposed part of the metallization 104D by forming additional adhesion promoter material 222 on the exposed part of the metallization 104D (as in Fig.2 shown in the middle field of page two) and / or by roughening a surface of the exposed part of the metallization 104D.

[0043] The method may further involve placing a second encapsulation material 112 over the surface-treated metallization 104D. A type of encapsulation material, a method for placing it, etc., may be similar to what is described in connection with the first encapsulation material 108.

[0044] In various embodiments (which are not shown as a single process, but Fig. 5A, middle section and Fig. Figure 5B, lower section, shows die housings 230, which may be a result of the process. Instead of applying the encapsulation material 108, the exposed part of the metallization 104D can be roughened, for example, by etching. In the figures, a roughened surface is indicated by a zigzag line and labeled 224.

[0045] As in connection with Fig. As further described in section 3, the metallization 104U facing away from the removable carrier 118 can be roughened (e.g. instead of being provided with the adhesion promoter material 222).

[0046] The roughening process can, for example, include or consist of etching.

[0047] The roughened metallization surface 224 can be the surface of the metallization facing away from the removable substrate, after the roughening has a surface roughness between approximately 150 nm and approximately 2 µm, where the surface roughness is measured, for example, in terms of a maximum surface roughness value. The minimum targeted surface roughness can be in the range of approximately 150 to 200 nm (Rz), and an optimal roughness for achieving high adhesion can be in the range of approximately 0.5 to 2 µm (Rz).

[0048] The roughened surface 224 can have (microscopic) openings and protrusions, thereby providing structures in which the encapsulation material 108, 112 can be partially positioned during the encapsulation process, thus interlocking the encapsulation material 108, 112 and the roughened metallization surface 224. This means that physical / mechanical adhesion can be increased. In various embodiments, a protective layer, for example an oxidation protection layer, can be arranged over the roughened surface 224.

[0049] Both the front face metallization 104F of the first die 102 and the back face metallization 104B of the second die 102 can have a surface that is in direct physical contact with the second encapsulation material 112 and can be roughened and / or can have a further adhesion promoter material 222 that is arranged between the surface and the second encapsulation material 112 and is in direct physical contact with the second encapsulation material 112.

[0050] In various embodiments, the adhesion of the adhesion promoter material 222 to the metallization 104U and / or 104D can be further increased by subjecting the metallization 104U and / or 104D to plasma treatment in order to reduce the surface energy of a surface of the metallization 104U, 104D.

[0051] In various (not shown) embodiments, the exposed metallization 104D can be treated by sputtering a metal layer onto the exposed part of the metallization 104D if the exposed metallization 104D neither contains the adhesion promoter material 222 nor is roughened.

[0052] In various embodiments, some of which are in Fig. As illustrated in Figure 3, the surface treatment of the metallization 104U facing away from the removable support 118 can be carried out while the die 102 is part of a wafer 102W. In other words, the metallization 104U, which will later be arranged facing away from the removable support 118, can be part of a surface of a wafer 102W with the metallization 104BW or 104FW, which can be surface-treated, for example, roughened or provided with the adhesion promoter material 222 (in Figure 3). Fig.3 it is roughened, whereby the roughened metal surfaces 224U are formed either as the front of the wafer 102W with the roughened metallization 224F or as the back of the wafer 102W with the roughened metallization 224B).

[0053] The in Fig. The 3 methods shown for manufacturing the die package 230 can include providing the wafer 102W including the multiple dies 102, each having the front and back sides and the front side metallization 104F on the front and the back side metallization 104B on the back (top field on the first side). Fig.3) The wafer 102W on the left is shown with its front side (and corresponding front side metallization 104FW) facing upwards, while the wafer 102W on the right is shown with its back side (and corresponding back side metallization 104BW) facing upwards. The two wafers 102W may differ in various embodiments, for example, for different purposes within the die package 230, such as for a high-side MOSFET or a low-side MOSFET. In other embodiments, the two wafers may be identical but have different surface treatments on their sides, such as roughening or coating with the adhesion promoter material 222.

[0054] The process can roughen the surface of the front face metallization 104F of dies 102 (part 1 of Fig. 3, middle left) or the reverse metallization 104B of the dies 102 (part 1 of Fig. 3, middle right) include.

[0055] The process can further include separating the wafer 102W into the multiple dies 102 by known processes, for example by sawing or laser cutting. In the lower area of ​​the first part from Fig. 3 only shows the result.

[0056] In various embodiments, the method can further include placing at least one of the dies 102 in the at least one recess 116 of the laminated carrier 106 on the removable carrier 118 without the roughened surface 224 facing away from the removable carrier 118. This is in the upper region of the second part made of Fig. 3 shown.

[0057] In various embodiments, the method can further involve partially encapsulating the first die 102, such that the first encapsulation material 108 covers at least the metallization 104U facing away from the removable support 118, and removing the removable support 118 to expose at least a part of the metallization 104B facing the removable support 118 ( Fig. 3, Part 2, second field).

[0058] In various embodiments, the method can further include surface treatment of the metallization 104B facing away from the removable carrier 118 by roughening the surface. One result is shown in Fig. 3, Part 2, third field shown.

[0059] Alternatively, the adhesion promoter material 222 can be formed on the metallization 104D facing the removable support 118 when it is partially exposed.

[0060] The options are shown in the following table. The table summarizes which of the processes for increasing adhesion between the metallization 104 and the encapsulation material 108, 112 can be used in combination for a given die 102. This is indicated by entries in the same row. For example, as indicated in the first row, at the wafer level, both the front-side metallization 104F and the back-side metallization 104B can be roughened, for example, one after the other, e.g., by roughening the front-side metallization 104F, relaminating the wafer onto a new substrate with the roughened front side, removing the temporary substrate from the back side, and roughening the back-side metallization 104B. The same principle may not be applicable if the adhesion promoter 222 is used, as indicated in the second row: The adhesion promoter 222, which is applied to, for example,When the front-side metallization is applied, it can exhibit such high adhesion that it may be impossible to remove it from the temporary support that would be used to roughen the 102W wafer from the other side. It is understood that the die front and die back are interchangeable in many cases. The front The back Wafer level CU roughening after front-side copper plating Copper roughening after backside copper plating Bonding agent after mounting on a slicing belt before or after slicing Bonding agent after mounting on a slicing belt, before or after slicing Protecting the copper with an organic surface protection layer (e.g., ENTEC, OSP) Front surface metallization Protecting the copper with an organic surface protection layer (e.g., ENTEC, OSP) after backside metallization Protect the copper with a protective layer Protect the copper with a protective layer After die placement (the die is placed inside the cavity where the PCB core is placed and the tape is bonded) Adhesion promoter is placed inside the cavity in the PCB core after the dies have been mounted and bonded to the tape. Adhesion promoter is applied after mounting the die inside the cavity in the PCB core and bonding to the tape. Surface pretreatment with plasma (activation of the surface by reducing the surface energy) After the first lamination (these are fixed to the copper core with semi-cured prepreg or other polymer material) CU roughening after front-side copper plating Copper roughening after backside copper plating Protecting the copper with an organic surface protection layer (e.g., ENTEC, OSP) Front surface metallization Protecting the copper with an organic surface protection layer (e.g., ENTEC, OSP) Backside metallization Adhesion promoter is placed inside the cavity in the PCB core after the dies have been mounted and bonded to the tape. Adhesion promoter is applied after mounting the die inside the cavity in the PCB core and bonding to the tape. Surface pretreatment with plasma (activation of the surface by reducing the surface energy) Surface pretreatment with plasma (activation of the surface by reducing the surface energy)

[0061] As indicated in the table, at the wafer level, the die metallization 104 (e.g., copper surface) can either be roughened, for example, using a special micro-etching process, and protected with a temporary surface treatment that protects the metallization 104 (e.g., the copper surface) from re-oxidation or limits oxide layer growth. After roughening, the metallization 224, e.g., the (roughened) copper surface, can be protected with an organic surface protection treatment or similar protection to prevent re-oxidation, which causes a reduction in adhesion strength. Adhesion promoters or activation may not be used in this process because this process would cause problems between the die and the severing ribbon (increased adhesion).The typical process for roughening (0.5 to 2 µm Rz) can, for example, be carried out for the back of the die 104B after backside metallization, when the die 102 is still on a glass substrate 118.

[0062] As indicated in the table, adhesion mediation can also be performed at a panel level after die placement or after a process of incompletely cured lamination, also known as soft lamination.

[0063] If the process is performed at the panel level, an adhesion promoter process can be used to improve the adhesion between the copper and the encapsulation material. The process can (e.g., must) be carried out in two steps. The first process can be performed after the dies 102 have been placed within the recesses (core openings) 116 and bonded to the removable support 118 (e.g., the tape). In this stage, the adhesion promoter 222 (e.g., silane) can be coated (e.g., sprayed) onto the top side of the panel. Here, a chemical bond of the adhesion promoter 222 on one side with the metallizations 104 and on the other side with the encapsulation material 108, 112 (e.g., a resin of the laminate, a resin sheet, a cast resin sheet, prepreg, or another polymer material in sheet, liquid, or granular form) can be the mechanism that leads to increased adhesion.Further improvement of adhesion can be achieved by plasma treatment, which prepares the surface in such a way as to obtain a reproducible reactive surface for the chemical bonding of the adhesion promoter 222. The adhesion promoter 222 can be applied in an additional process. Alternatively or additionally, the adhesion promoter 222 can be included in the laminate.

[0064] The second adhesion-promoting process at the panel level may be necessary for the underside of the panel. The underside of the panel (the side facing band 118, i.e., metallization 104B) can be treated after pre-lamination (adhesion promoter, roughening, activation). At this stage, a copper roughening process or the same processes described above can be used.

[0065] The process can also be carried out in such a way that part of the processes take place at the wafer level (i.e., the die back is treated) and a second process can be carried out when the dies are bonded and pre-laminated within the carrier 106 (e.g., the die front).

[0066] Fig. 4, Fig. 5A and Fig. Figure 5B shows die packages 230 according to various embodiments. The die packages 230 can be used for some of the combinations listed in the table and / or some of the embodiments shown in the context of Fig. 2 and / or Fig. 3 are mentioned, but not shown there, to serve as illustrations.

[0067] In Fig.Figure 4 shows that the die housing 230, shown above, has the adhesion promoter 222, 222B, 222U applied between the metallization 104U, which is the backside metallization 104B of the die 102, and the first encapsulation material 108. The adhesion promoter 222 also covers the rest of the die 102, for example, the semiconductor material 102, which may be exposed on the side surfaces of the die 102 and (side and top surfaces of) the laminated support 106. The adhesion promoter 222 can be applied, for example, by spraying or dipping during a process following die placement. The metallization 104D exposed on the underside of the housing 230 underwent the roughening treatment to form the roughened surface 224, 224F of the metallization 104F, 104D. The second encapsulation material 112 can be arranged over the roughened surface 224, 224F.

[0068] The one in the middle made of Fig.The embodiment of the die housing 230 shown in Figure 4 is similar to the embodiment shown above, except that the metallization 104D, which is exposed on the underside of the housing 230, is covered by an adhesion promoter 222, 222F, 222D. Furthermore, the laminated support 106 and the first encapsulation material 108 are covered by the adhesion promoter 222, 222F, 222D, which may have been applied by spraying or dipping. The second encapsulation material 112 may be arranged over the adhesion promoter 222, 222F, 222D.

[0069] The in Fig.The embodiment of the die housing 230 shown below comprises a die 102 with a roughened, upward-facing underside metallization 104, 104B, 104U. The roughening may, for example, have been performed at the wafer level. Furthermore, the laminated support 106, which may contain copper at least on its surface, may also be roughened, for example, in a separate process before being mounted onto the (removed) removable support 118. A downward-facing front-side metallization 104F, 104D of the die 102 may have been roughened during a post-softlam process, forming the roughened metallization 224, 224F. The downward-facing surface of the laminated support 106 may have been roughened together with its other surfaces, or it may have been roughened during the post-softlam process.

[0070] In Fig.Figure 5A shows three embodiments of die housings 230 with the adhesion promoter 222 applied only to the upward-facing metallization 104U. The embodiments on the left have the die 102 in opposite orientations, and the embodiment on the right includes two dies 102, one of which is reversed relative to the other. The adhesion promoter 222 is applied selectively, for example, using a mask or a very fine nozzle, and covers only the metallizations 104U. The lower metallizations 104B are free of the adhesion promoter 222 and can be subjected, for example, to a sputtering process to form a (not shown) metal layer or, for example, to thicken the metallizations 104D.

[0071] The middle section from Fig.Figure 5A shows embodiments that can be the die housings 230 after further processing of the die housings 230 shown in the upper section. The further processing can include roughening the downward-facing metallizations 104D, thereby forming the roughened metallization surfaces 224. After roughening, the second encapsulation material 112 was formed over the roughened metallization 224.

[0072] The lower section from Fig. Figure 5A shows embodiments that can be the die housings 230 after further processing of the die housings 230 shown in the upper section. The further processing can include forming the adhesion promoter 222 over the downward-facing metallizations 104D. The second encapsulation material 112 was formed over the adhesion promoter 222.

[0073] In the section above... Fig.In the embodiment shown in Figure 5B, the upward-facing metallization 104U is roughened. The roughened metallization 224 can be formed during processing at the wafer level. The lower metallizations 104B are free of the adhesion promoter 222 and can, for example, be subjected to a sputtering process to form a (not shown) metal layer or, for example, to thicken the metallizations 104D.

[0074] The middle section from Fig. Figure 5B shows embodiments that can be the die housings 230 after further processing of the die housings 230 shown in the preceding section. The further processing can include roughening the downward-facing metallizations 104D, thereby forming the roughened metallization surfaces 224. After roughening, the second encapsulation material 112 was formed over the roughened metallization 224.

[0075] The lower section from Fig.Figure 5A shows embodiments that can be the die housings 230 after further processing of the die housings 230 shown in the upper section. The further processing can include forming the adhesion promoter 222 over the downward-facing metallizations 104D. The second encapsulation material 112 was formed over the adhesion promoter 222.

[0076] Fig.Figure 6 shows a process flow 600 of a method for manufacturing a die package. The method may include: placing a first die with a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated support on a removable support (at 610); surface treatment of the metallization facing away from the removable support by forming an adhesion promoter material on the metallization facing away from the removable support and / or by roughening the surface of the metallization facing away from the removable support (at 620); partial encapsulation of the first die such that a first encapsulation material covers at least the metallization facing away from the removable support (at 630); and removal of the removable support to expose at least a part of the metallization facing the removable support (at 640).

[0077] Fig.Figure 7 shows a process flow 700 of a method for manufacturing a die package. The method may include: providing a wafer comprising multiple dies, each die having a front and a back and a front metallization on the front and a back metallization on the back (at 710); roughening a surface of the front metallization of the dies or the back metallization of the dies (at 720); singulating the wafer into multiple dies (at 730); placing at least one of the dies into at least one recess of a laminated support on a removable support, the roughened surface facing the removable support (at 740).Surface treatment of the metallization facing away from the removable support by forming an adhesion promoter material on the metallization facing away from the removable support and / or by roughening the surface of the metallization facing away from the removable support (at 750), partial encapsulation of the first die such that the first encapsulation material covers at least the metallization facing away from the removable support (at 760), and removal of the removable support in order to expose at least a part of the metallization facing the removable support (at 770).

[0078] Several examples are described below:

[0079] Example 1 is a die package. The die package can include: a laminated substrate including at least one recess, a first die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the first die is arranged in the at least one recess, a first encapsulation material that partially encapsulates the first die, covering at least the front metallization or the back metallization, and an adhesion promoter material between the metallization covered by the first encapsulation material and the first encapsulation material, and in direct physical contact with the first encapsulation material and the metallization covered by the first encapsulation material.

[0080] In Example 2, the item from Example 1 can optionally include the fact that the other metallization, which is not covered by the encapsulation material, is free of the adhesion promoter material.

[0081] In Example 3, the item from Example 1 may optionally further include: a second encapsulation material covering the other metallization, wherein the other metallization covered by the second encapsulation material has a surface that is in direct physical contact with the second encapsulation material, wherein the surface of the other metallization is roughened.

[0082] In Example 4, the article from Example 1 may optionally further include: a second encapsulation material covering the other metallization, and a further adhesion promoter material between the other metallization covered by the second encapsulation material and the second encapsulation material, and in direct physical contact with the second encapsulation material and the metallization covered by the first encapsulation material.

[0083] In Example 5, the article from Example 1 may optionally further include: a second die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the first die is arranged in the at least one recess with its front facing an underside of the at least one recess, wherein the second die is arranged in the at least one recess with its back facing the underside of the at least one recess, and wherein the adhesion promoter is provided on the back metallization of the first die and on the front metallization of the second die.

[0084] In Example 6, the item from Example 5 may optionally further include: a second encapsulation material covering the front-side metallization of the first die and the back-side metallization of the second die, wherein both the front-side metallization of the first die and the back-side metallization of the second die have a surface that is in direct physical contact with the second encapsulation material, and wherein the front-side metallization of the first die and the back-side metallization of the second die are roughened.

[0085] In Example 7, the article from Example 5 may optionally further include: a second encapsulation material covering the front-side metallization of the first die and the back-side metallization of the second die, and another adhesion promoter material between the front-side metallization of the first die and the second encapsulation material and in direct physical contact with the second encapsulation material and the front-side metallization, and between the back-side metallization of the second die and the second encapsulation material and in direct physical contact with the second encapsulation material and the back-side metallization.

[0086] Example 8 is a die package. The die package can comprise: a laminated substrate including at least one depression, a first die having a front and a back and a front metallization on the front and a back metallization on the back, a second die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the first die is arranged in the at least one depression with its front facing a bottom of the at least one depression, wherein the second die is arranged in the at least one depression with its back facing the bottom of the at least one depression, and a first encapsulation material that partially encapsulates the first die, covering at least the front metallization or the back metallization.wherein the backside metallization of the first die has a surface that is in direct physical contact with the first encapsulation material, wherein the surface of the metallization is roughened, and wherein the frontside metallization of the second die has a surface that is in direct physical contact with the first encapsulation material, wherein the surface of the metallization is roughened.

[0087] In Example 9, the article from Example 8 may optionally further include: a second encapsulation material covering the front-side metallization of the first die and the back-side metallization of the second die, and another adhesion promoter material between the front-side metallization of the first die and the second encapsulation material and in direct physical contact with the second encapsulation material and the front-side metallization, and between the back-side metallization of the second die and the second encapsulation material and in direct physical contact with the second encapsulation material and the back-side metallization.

[0088] In Example 10, the article from Example 8 may optionally further include: a second encapsulation material covering the front-side metallization of the first die and the back-side metallization of the second die, wherein both the front-side metallization of the first die and the back-side metallization of the second die have a surface that is in direct physical contact with the second encapsulation material, and wherein the front-side metallization of the first die and the back-side metallization of the second die are roughened.

[0089] Example 11 is a die package. The die package can include: a laminated substrate including at least one recess, a first die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the first die is arranged in the at least one recess, a first encapsulation material partially encapsulating the first die, covering at least the front metallization or the back metallization, a second encapsulation material covering the other metallization, and an adhesion promoter material between the metallization covered by the second encapsulation material and the second encapsulation material, and in direct physical contact with the second encapsulation material and the metallization covered by the second encapsulation material, wherein the metallization covered by the first encapsulation materiala surface that is in direct physical contact with the first encapsulation material, wherein the surface of the metallization is roughened; and,

[0090] Example 12 is a die package. The die package can include: a laminated substrate including at least one recess; a first die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the first die is arranged in the at least one recess; a first encapsulation material that partially encapsulates the first die and covers at least the front metallization or the back metallization, wherein the metallization covered by the first encapsulation material has a surface that is in direct physical contact with the first encapsulation material, wherein the surface of the metallization is roughened; and a second encapsulation material that covers the other metallization, wherein the other metallization covered by the second encapsulation material has a surfacewhich is in direct physical contact with the second encapsulation material, the surface of which is roughened.

[0091] In Example 13, the item from any of Examples 1 to 12 may optionally include the front face metallization and / or the back face metallization containing and / or comprising copper.

[0092] In Example 14, the item from any of Examples 1 to 7 may optionally include the fact that the adhesion promoter contains or consists of an organic material.

[0093] In Example 15, the item from Example 14 may optionally include the adhesion promoter comprising or consisting of at least one material from a group of organic materials, wherein the group includes: an epoxy, a silane, benzotriazole, imidazole, and benzimidazole.

[0094] In Example 16, the item from one of Examples 1 to 7 may optionally include the fact that the adhesion promoter contains or consists of an inorganic material.

[0095] In Example 17, the item from Example 16 may optionally include the adhesion promoter containing or consisting of at least one material from a group of inorganic materials, the group including ZnCr and Al2O3.

[0096] In Example 18, the object from any of Examples 1 to 17 may further optionally include: a first metal layer over the first encapsulation material, and a first electrically conductive structure connecting the first metal layer to the metallization covered by the first encapsulation material.

[0097] In Example 18, the item from one of Examples 3, 4, 6, 7, 9, 10, 11 or 12 may further optionally include: a second metal layer over the second encapsulation material and a second electrically conductive structure connecting the second metal layer to the metallization covered by the second encapsulation material.

[0098] In Example 20, the item from one of Examples 1 to 19 may optionally include the fact that the laminated substrate is a printed circuit board.

[0099] In Example 21, the item from one of Examples 1 to 20 may optionally include the first one being a power electronics device.

[0100] In Example 22, the item from one of Examples 1 to 21 may optionally include the first die being a diode.

[0101] In Example 23, the item from any of Examples 1 to 22 may optionally include the first die being a transistor, wherein the front-side metallization includes a control terminal and a first controlled terminal of the transistor, and the back-side metallization includes a second controlled terminal of the transistor.

[0102] In Example 24, the item from one of Examples 5 to 10 may optionally include the second die forming a driver circuit for the first die.

[0103] In Example 25, the object from one of Examples 5 to 10 may optionally include the first die and the second die being arranged in the same depression.

[0104] In Example 26, the object from one of Examples 1 to 25 may optionally also include a third die.

[0105] In Example 27, the object from one of Examples 5 to 10 may optionally include: a third die, wherein the at least one depression includes the depression in which the first die is arranged, and at least one further depression, wherein the first die and the third die are arranged in the depression and wherein the second die is arranged in the further depression.

[0106] In Example 28, the item from Example 27 can optionally include the first die and the second die being transistors, and the third die containing a control circuit.

[0107] In Example 29, the item from one of Examples 1 to 28 may optionally further include the adhesion promoter material being in direct physical contact with a semiconductor surface and / or a dielectric surface of the die.

[0108] In Example 24, the item from one of Examples 4, 7 or 9 may optionally include the additional adhesion promoter material being in direct physical contact with a semiconductor surface and / or a dielectric surface of the die.

[0109] In Example 31, the item from any of Examples 1 to 30 may optionally include the fact that the laminated substrate contains copper.

[0110] Example 32 is a method for manufacturing a die package. The method may include: placing a first die, having a front and a back, and a front metallization on the front and a back metallization on the back, into at least one recess of a laminated support on a removable support; surface-treating the metallization facing away from the removable support by forming an adhesion promoter material on the metallization facing away from the removable support and / or by roughening the surface of the metallization facing away from the removable support; partially encapsulating the first die such that a first encapsulation material covers at least the metallization facing away from the removable support; and removing the removable support to expose at least a portion of the metallization facing the removable support.

[0111] In Example 33, the item from Example 32 may optionally include: surface treatment of the exposed part of the metallization by forming further adhesion promoter material on the exposed part of the metallization and / or by roughening a surface of the exposed part of the metallization, and arranging a second encapsulation material over the surface-treated metallization.

[0112] In Example 34, the article from Example 32 may optionally further include: arranging a second die with a front and a back and a front metallization on the front and a back metallization on the back in the at least one recess, wherein its back is facing an underside of the at least one recess, wherein the first die is arranged in the at least one recess with its front facing the underside of the at least one recess, wherein the adhesion promoter is arranged on the back metallization of the first die and on the front metallization of the second die and / or the back metallization of the first die and the front metallization of the second die are roughened.

[0113] In Example 35, the article from Example 34 may optionally further include: arranging a second encapsulation material covering the front-side metallization of the first die and the back-side metallization of the second die, wherein both the front-side metallization of the first die and the back-side metallization of the second die have a surface that is in direct physical contact with the second encapsulation material and is roughened, and / or have a further adhesion promoter material arranged between the surface and the second encapsulation material and in direct physical contact with the second encapsulation material.

[0114] In Example 36, the item from one of Examples 32 to 35 may optionally include the surface treatment of the metallization facing away from the removable support, while the die is part of a wafer.

[0115] In Example 37, the item from one of Examples 32 to 36 may optionally include that the surface treatment of the metallization facing away from the removable support includes roughening, and that the roughening includes etching.

[0116] In Example 38, the item from one of Examples 32 to 37 may optionally include that the surface treatment of the metallization facing away from the removable support includes roughening, and that the surface of the metallization facing away from the removable support has a surface roughness between about 150 nm and about 2 µm after roughening.

[0117] In Example 39, the article from one of Examples 32 to 38 may optionally include that the surface treatment of the metallization facing away from the removable support includes roughening, the process further including the application of an oxidation protection layer to the roughened metallization.

[0118] In Example 40, the article from any of Examples 32 to 36 may optionally include the surface treatment of the metallization facing away from the removable support involving the formation of an adhesion promoter material on the metallization, and the formation of the adhesion promoter material on the metallization involving spraying the adhesion promoter material onto the metallization or immersing the metallization in the adhesion promoter material.

[0119] In Example 41, the article from one of Examples 32 to 36 or 40 may optionally include the surface treatment of the metallization facing away from the removable support involving the formation of an adhesion promoter material on the metallization, wherein the process further includes plasma treatment of the metallization prior to the formation of the adhesion promoter material on the metallization in order to reduce a surface energy of a surface of the metallization.

[0120] In Example 42, the item from any of Examples 33 to 41 may optionally include that the surface treatment of the exposed part of the metallization includes roughening, and that the roughening includes etching.

[0121] In Example 43, the item from one of Examples 33 to 42 may optionally include that the surface treatment of the exposed part of the metallization includes roughening, and that the roughened exposed part of the metallization has a surface roughness between about 150 nm and about 2 µm after roughening.

[0122] In Example 44, the article from one of Examples 33 to 43 may optionally include surface treatment of the exposed part of the metallization comprising roughening, the process further comprising the application of an oxidation protection layer to the roughened metallization.

[0123] In Example 45, the item from any of Examples 32 to 36 may optionally include the surface treatment of the exposed part of the metallization involving the formation of an adhesion promoter material on the metallization, and the formation of the adhesion promoter material on the metallization involving spraying the adhesion promoter material onto the metallization or immersing the metallization in the adhesion promoter material.

[0124] In Example 46, the article from one of Examples 32 to 36 or 40 may optionally include the surface treatment of the exposed part of the metallization involving the formation of an adhesion promoter material on the metallization, wherein the process further includes plasma treatment of the exposed part of the metallization prior to the formation of the adhesion promoter material on the metallization in order to reduce a surface energy of a surface of the metallization.

[0125] In Example 47, the item from Example 32 may optionally include the following: sputtering of a metal layer onto the exposed part of the metallization.

[0126] Example 48 is a method for manufacturing a die package. The method may include: providing a wafer comprising several dies, each die having a front and a back and a front metallization on the front and a back metallization on the back; roughening a surface of the front metallization of the dies or the back metallization of the dies; singulating the wafer into several dies; placing at least one of the dies into at least one well of a laminated support on a removable support, the roughened surface facing the removable support; surface-treating the metallization facing away from the removable support by forming an adhesion promoter material on the metallization facing away from the removable support and / or by roughening the surface of the metallization facing away from the removable support; and partially encapsulating the first die in this manner.that the first encapsulation material covers at least the metallization facing away from the removable support, and removal of the removable support in order to expose at least a part of the metallization facing the removable support.

[0127] Example 49 is a die housing comprising a laminated support having at least one recess, a die having a front and a back and a front metallization, wherein the die is arranged in the at least one recess with its front facing a bottom of the at least one recess, a first encapsulation material partially encapsulating the die, covering at least the back, a second encapsulation material covering the front metallization, and an adhesion promoter material between the front metallization and the second encapsulation material and in direct physical contact with the second encapsulation material and the front metallization.

[0128] In Example 50, the article from Example 49 may optionally further include the adhesion promoter material comprising or consisting of at least one material from a group of organic materials, wherein the group comprises: an epoxide, a silane, benzotriazole, imidazole and benzimidazole.

[0129] In Example 51, the item from Example 49 or 50 may optionally include the adhesion promoter material being in direct physical contact with a semiconductor surface and / or a dielectric surface of the die.

[0130] Example 52 is a die housing comprising a laminated support comprising at least one recess, a die having a front and a back and a front metallization, wherein the die is arranged in the at least one recess with its front facing a bottom of the at least one recess, a first encapsulation material partially encapsulating the die, with at least the back being covered, and a second encapsulation material covering the front metallization, wherein the front metallization of the die is roughened.

[0131] In Example 53, the item from one of Examples 49 to 52 may optionally also include the fact that the die is a driver die.

[0132] Example 54 is a die housing comprising a laminated support comprising at least one recess, a die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the front metallization and the back metallization are roughened, wherein the die is arranged in the at least one recess with its front or with its back facing a bottom of the at least one recess, and a first encapsulation material that partially encapsulates the die, wherein at least the metallization facing away from the bottom of the at least one recess is covered, and wherein the metallization of the die facing away from the bottom of the at least one recess has a surface that is in direct physical contact with the first encapsulation material.

[0133] In Example 55, the item from one of Examples 49 to 54 may further optionally include that the die is a transistor, and that the front-side metallization comprises a control terminal and a first controlled terminal of the transistor, and the back-side metallization comprises a second controlled terminal of the transistor.

[0134] In Example 56, the article from Example 54 or 55 may optionally also have a second encapsulation material that covers the metallization facing the underside of the at least one recess and is in direct physical contact with the metallization facing the underside of the at least one recess.

[0135] Example 57 is a die package comprising a laminated support comprising at least one recess, a die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the die is arranged in the at least one recess, a first encapsulation material partially encapsulating the die, covering at least the front metallization or the back metallization, and an adhesion promoter material between the metallization covered by the first encapsulation material and the first encapsulation material and in direct physical contact with the first encapsulation material and the metallization covered by the first encapsulation material, wherein the adhesion promoter material is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die.

[0136] In Example 58, the article from Example 57 may further optionally comprise a second encapsulation material covering the other metallization from the front-side metallization and the back-side metallization not partially encapsulated by the first encapsulation material, and a further adhesion promoter material between the other metallization covered by the second encapsulation material and the second encapsulation material, and in direct physical contact with the second encapsulation material and the metallization covered by the first encapsulation material, wherein the further adhesion promoter material is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die.

[0137] Example 59 is a die housing comprising a laminated support comprising at least one recess, a die having a front and a back and a front metallization on the front and a back metallization on the back, wherein the die is arranged in the at least one recess, a first encapsulation material partially encapsulating the die, covering at least the front metallization or the back metallization, a second encapsulation material covering the other metallization, and a further adhesion promoter material between the metallization covered by the second encapsulation material and the second encapsulation material, and in direct physical contact with the second encapsulation material and the metallization covered by the second encapsulation material, wherein the metallization covered by the first encapsulation material has a surfacewhich is in direct physical contact with the first encapsulation material, wherein the surface of the metallization is roughened, and wherein the further adhesion promoter material is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die.

[0138] In Example 60, the item from one of Examples 54 to 59 may further optionally include that the die is a transistor, and that the front-side metallization comprises a control terminal and a first controlled terminal of the transistor, and the back-side metallization comprises a second controlled terminal of the transistor.

[0139] Example 61 is a method for manufacturing a die housing, comprising placing a die having a front and a back and a front metallization on the front into at least one recess of a laminated support on a removable support, partially encapsulating the die such that a first encapsulation material covers at least the back, removing the removable support to expose at least a portion of the metallization facing the removable support, surface-treating the exposed portion of the metallization by forming further adhesion promoter material on the exposed portion of the metallization and / or by roughening a surface of the exposed portion of the metallization, and arranging a second encapsulation material over the surface-treated metallization, and arranging a second encapsulation material covering the front metallization of the die.wherein the front face metallization of the die has a surface that is in direct physical contact with the second encapsulation material and is roughened and / or has a further adhesion promoter material that is arranged between the surface and the second encapsulation material and is in direct physical contact with the second encapsulation material.

[0140] In Example 62, the item from Example 61 may optionally include that the surface treatment includes roughening, and that the roughening includes etching.

[0141] In Example 63, the object from Example 61 or 62 may optionally also include the fact that, after roughening, the surface has a surface roughness between about 150 nm and about 2 µm.

[0142] In Example 64, the object from Example 62 or 63 may optionally have an oxidation protection layer applied to the roughened metallization.

[0143] In Example 65, the item from Example 61 may optionally further include the surface treatment comprising the formation of the adhesion promoter material on the metallization, and the formation of the adhesion promoter material on the metallization comprising spraying the adhesion promoter material onto the metallization or immersing the metallization in the adhesion promoter material.

[0144] In Example 66, the subject matter of Example 61 or 65 may further optionally include the surface treatment comprising the formation of the adhesion promoter material on the metallization, and the process further comprising plasma treatment of the metallization prior to the formation of the adhesion promoter material on the metallization in order to reduce a surface energy of a surface of the metallization.

[0145] Example 67 is a method for manufacturing a die housing, wherein the method comprises placing a die having a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated support on a removable support, wherein the front metallization and the back metallization are roughened, and partially encapsulating the die such that a first encapsulation material covers at least the metallization facing away from the underside of the at least one recess, which has a surface that is in direct physical contact with the first encapsulation material.

[0146] In Example 68, the article from Example 67 may optionally further include an arrangement of a second encapsulation material covering the metallization of the die facing the underside of the at least one recess, wherein the metallization of the die facing the underside of the at least one recess has a surface that is in direct physical contact with the second encapsulation material.

[0147] In Example 69, the item from Example 67 or 68 may optionally also have a roughening of the front face metallization and / or the back face metallization.

[0148] In Example 70, the item from Example 69 may optionally include roughening and etching.

[0149] Example 71 is a method for manufacturing a die package, wherein the method comprises placing a die having a front and a back and a front metallization on the front in at least one recess of a laminated support on a removable support, arranging an adhesion promoter material on the metallization facing away from the removable support and on a semiconductor surface and / or a dielectric surface of the die, and partially encapsulating the die such that a first encapsulation material covers at least the metallization facing away from the removable support and the semiconductor surface and / or a dielectric surface of the die that is covered with the adhesion promoter material.

[0150] Example 72 is a method for manufacturing a die package, wherein the method comprises placing a die having a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated support on a removable support, arranging an adhesion promoter material on the metallization facing away from the removable support and on a semiconductor surface and / or a dielectric surface of the die, and partially encapsulating the die such that a first encapsulation material covers at least the metallization facing away from the removable support and the semiconductor surface and / or a dielectric surface of the die that are covered with the adhesion promoter material.

[0151] In Example 73, the article from Example 72 may optionally include the removal of the removable support, the placement of a further adhesion promoter material on the metallization exposed by the removable support and on a semiconductor surface and / or a dielectric surface of the die, and the partial encapsulation of the die such that a second encapsulation material covers at least the metallization exposed by the removable support and the semiconductor surface and / or a dielectric surface of the die that are covered with the further adhesion promoter material.

[0152] Example 74 is a method for manufacturing a die package, comprising placing a die having a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated support on a removable support, partially encapsulating the die such that a first encapsulation material covers at least the roughened metallization facing away from the removable support, removing the removable support, applying a further adhesion promoter material to the metallization exposed by the removable support and to a semiconductor surface and / or a dielectric surface of the die, and partially encapsulating the die such that a second encapsulation material covers at least the metallization exposed by the removable support and the semiconductor surface and / or a dielectric surface of the die.which are covered with the additional bonding agent material.

[0153] In Example 75, the object from Example 67, 68 or 74 may optionally also have a roughening of the metallization facing away from the removable support.

[0154] In Example 76, the item from Example 75 may optionally include roughening of the metallization facing away from the removable support, while the die is part of a wafer.

[0155] In Example 77, the item from Example 71 or 72 may optionally further include the arrangement of the adhesion promoter material while the die is part of a wafer.

Claims

[1] Die housing (230), comprising the following: a laminated carrier (106) comprising at least one recess (116); a die (102) with a front and a back and a front metallization (104F); wherein the die (102) is arranged in the at least one recess (116) with its front side facing a bottom side of the at least one recess (116); a first encapsulation material (108) that partially encapsulates the die (102), covering at least the back side; a second encapsulation material (112) covering the front face metallization (104F); and an adhesion promoter material (222) between the front face metallization (104F) and the second encapsulation material (112) and in direct physical contact with the second encapsulation material (112) and the front face metallization (104F). [2] The casing according to claim 1, wherein the adhesion promoter material comprises or consists of at least one material from a group of organic materials, the group comprising: an epoxy; a silane; Benzotriazole; Imidazole; and Benzimidazole. [3] Die housing (230) according to claim 1 or 2, wherein the adhesion promoter material is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die. [4] The die housing (230) comprising the following: a laminated carrier (106) comprising at least one recess (116); a die (102) with a front and a back and a front metallization (104F); wherein the die (102) is arranged in the at least one recess (116) with its front side facing a bottom side of the at least one recess (116); a first encapsulation material (108) that partially encapsulates the die (102), covering at least the back side; a second encapsulation material (112) covering the front face metallization (104F), wherein the front face metallization (104F) of the die (102) is roughened. [5] Die housing (230) according to any one of claims 1 to 4, wherein the die (102) is a driver die. [6] The die housing (230) comprising the following: a laminated carrier (106) comprising at least one recess (116); a die (102) with a front and a back and a front metallization (104F) on the front and a back metallization (104B) on the back; wherein the front face metallization (104F) and the back face metallization (104B) are roughened; wherein the die (102) in the at least one depression (116) with its front face or with its rear side facing an underside which is arranged towards at least one recess (116); a first encapsulation material (108) that partially encapsulates the die (102), covering at least the metallization (104F or 104B) facing away from the underside of the at least one recess (116); wherein the metallization (104F or 104B) of the die (102) facing away from the underside of the at least one recess (116) has a surface which is in direct physical contact with the first encapsulation material (108). [7] Die package according to any one of claims 1 to 6, wherein the die (102) is a transistor, and wherein the front face metallization (104F) comprises a control terminal and a first controlled terminal of the transistor and the back face metallization (104B) comprises a second controlled terminal of the transistor. [8] Die housing (230) according to claim 6 or 7, further comprising: a second encapsulation material that covers the metallization (104B or 104F) facing the underside of the at least one recess (116) and is in direct physical contact with the metallization (104B or 104F) facing the underside of the at least one recess (116). [9] The die housing (230) comprising the following: a laminated carrier (106) comprising at least one recess (116); a die (102) with a front and a back and a front metallization (104F) on the front and a back metallization (104B) on the back; wherein the die (102) is arranged in the at least one recess (116); a first encapsulation material (108) that partially encapsulates the die (102), covering at least the front face metallization (104F) or the back face metallization (104B); and an adhesion promoter material (222) between the metallization covered by the first encapsulation material (108) and the first encapsulation material (108) and in direct physical contact with the first encapsulation material (108) and the metallization covered by the first encapsulation material (108); wherein the adhesion promoter material (222) is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die (102). [10] Die housing (230) according to claim 9, further comprising: a second encapsulation material (112) covering the other metallization from the front metallization (104F) and the back metallization (104B), which is not partially encapsulated by the first encapsulation material (108); and a further adhesion promoter material (222) between the other metallization covered by the second encapsulation material (112) and the second encapsulation material (112) and in direct physical contact with the second encapsulation material (112) and the metallization covered by the first encapsulation material (108); wherein the further adhesion promoter material (222) is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die (102). [11] Die housing (230), comprising the following: a laminated carrier (106) comprising at least one recess (116); a die (102) with a front and a back and a front metallization (104F) on the front and a back metallization (104B) on the back; wherein the die is arranged in at least one recess (116); a first encapsulation material (108) that partially encapsulates the die (102), covering at least the front face metallization (104F) or the back face metallization (104B); a second encapsulation material (112) that covers the other metallization; and a further adhesion promoter material (222) between the metallization covered by the second encapsulation material (112) and the second encapsulation material (112) and in direct physical contact with the second encapsulation material (112) and the metallization covered by the second encapsulation material (112), wherein the metallization covered by the first encapsulation material (108) has a surface that is in direct physical contact with the first encapsulation material (108), wherein the surface of the metallization is roughened; and wherein the further adhesion promoter material (222) is additionally in direct physical contact with a semiconductor surface and / or a dielectric surface of the die (102). [12] Die housings according to any one of claims 6 to 11, where the first die is a transistor, and wherein the front face metallization includes a control terminal and a first controlled terminal of the transistor, and the back face metallization includes a second controlled terminal of the transistor. [13] Method for manufacturing a die housing, the method comprising the following steps: Placing a die with a front and a back and a front metallization on the front into at least one recess of a laminated substrate on a removable support; partial encapsulation of the die such that a first encapsulation material covers at least the back side; and Removing the removable support in order to expose at least part of the metallization facing the removable support; Surface treatment of the exposed part of the metallization by forming further adhesion promoter material on the exposed part of the metallization and / or by roughening a surface of the exposed part of the metallization, and placing a second encapsulation material over the surface-treated metallization; and Arranging a second encapsulation material covering the front face metallization of the die, wherein the front face metallization of the die has a surface that is in direct physical contact with the second encapsulation material and is roughened and / or has an additional adhesion promoter material that is positioned between the surface and the second encapsulation material and is in direct physical contact with the second encapsulation material. [14] Method according to claim 13, where surface treatment includes roughening, and where roughening includes etching. [15] Method according to claim 14, wherein the surface after roughening has a surface roughness between about 150 nm and about 2 µm. [16] Method according to one of claims 14 or 15, further comprising: Applying an oxidation protection layer to the roughened metallization. [17] Method according to claim 13, where surface treatment includes the formation of the adhesion promoter material on the metallization, and where the formation of the adhesion promoter material on the metallization includes spraying the adhesion promoter material onto the metallization or immersing the metallization in the adhesion promoter material. [18] Method according to claim 13 or 17, wherein the surface treatment comprises forming the adhesion promoter material on the metallization, wherein the method further comprises: Prior to forming the adhesion promoter material on the metallization, plasma treatment of the metallization is performed to reduce the surface energy of the metallization surface. [19] Method for manufacturing a die housing, the method comprising the following steps: Placing a die with a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated substrate on a removable substrate; where the front and back metallizations are roughened; partial encapsulation of the die such that a first encapsulation material covers at least the metallization facing away from the underside of the at least one recess; which has a surface that is in direct physical contact with the first encapsulation material. [20] Method according to claim 19, further comprising: Arranging a second encapsulation material covering the metallization of the die facing the underside of the at least one recess, wherein the metallization of the die facing the underside of the at least one recess has a surface, which is in direct physical contact with the second encapsulation material. [21] Method according to claim 19 or 20, further comprising: Roughening of the front surface metallization and / or the back surface metallization. [22] Method according to claim 21, wherein the roughening comprises etching. [23] Method for manufacturing a die housing, the method comprising the following steps: Placing a die with a front and a back and a front metallization on the front into at least one recess of a laminated substrate on a removable support; Arranging an adhesion promoter material on the metallization facing away from the removable support and on a semiconductor surface and / or a dielectric surface of the die; Partial encapsulation of the die such that a first encapsulation material covers at least the metallization facing away from the removable support and the semiconductor surface and / or a dielectric surface of the die that is covered with the adhesion promoter material. [24] Method for manufacturing a die housing, the method comprising the following steps: Placing a die with a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated substrate on a removable substrate; Arranging an adhesion promoter material on the metallization facing away from the removable support and on a semiconductor surface and / or a dielectric surface of the die; Partial encapsulation of the die such that a first encapsulation material covers at least the metallization facing away from the removable support and the semiconductor surface and / or a dielectric surface of the die that is covered with the adhesion promoter material. [25] Method according to claim 24, further comprising: Removing the removable carrier; Applying a further adhesion promoter material to the metallization exposed by the removable support and to a semiconductor surface and / or a dielectric surface of the die; Partial encapsulation of the die such that a second encapsulation material covers at least the metallization exposed by the removable support and the semiconductor surface and / or a dielectric surface of the die, which are covered with the further adhesion promoter material. [26] Method for manufacturing a die housing, the method comprising the following steps: Placing a die with a front and a back and a front metallization on the front and a back metallization on the back into at least one recess of a laminated substrate on a removable substrate; partial encapsulation of the die such that a first encapsulation material covers at least the roughened metallization facing away from the removable support; Removing the removable carrier; Applying a further adhesion promoter material to the metallization exposed by the removable support and to a semiconductor surface and / or a dielectric surface of the die; Partial encapsulation of the die such that a second encapsulation material covers at least the metallization exposed by the removable support and the semiconductor surface and / or a dielectric surface of the die, which are covered with the further adhesion promoter material. [27] Method according to claim 19, 20 or 26, further comprising: Roughening of the metallization facing away from the removable carrier. [28] Method according to claim 27, wherein the roughening of the metallization facing away from the removable support is carried out while the die is part of a wafer. [29] Method according to claim 23 or 24, wherein the arrangement of the adhesion promoter material is carried out while the die is part of a wafer.

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