Optoelectronic component and method for producing the same

Abstract

According to various embodiments, an optoelectronic component (100) can comprise: a first electrode (104) on a substrate (102) which has a first reflective surface (104a); a second electrode (112) arranged above the first electrode (104) having a second reflective surface (112a), wherein the second reflective surface (112a) and the first reflective surface (104a) are arranged such that they form an optical cavity;a photoactive element (130) which is arranged between the first reflecting surface (104a) and the second reflecting surface (112a), wherein the photoactive element (130) is configured such that when the optoelectronic device (100) is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the photoactive element (130) by absorption of the electromagnetic wave, the charge carriers of the first type generated in the photoactive element (130) are transported to the first electrode (104), and the charge carriers of the second type generated in the photoactive element (130) are transported to the second electrode (112).

Description

[0001] Several embodiments relate to an optoelectronic component and a method for manufacturing an optoelectronic component.

[0002] In general, the detection of radiation (e.g., electromagnetic radiation) using photodiodes is based on the generation of charge carriers due to the absorption of radiation in the photodiode. For example, conventional photodiodes with spectrally selective detection are currently based mainly on silicon (range 400 nm–1100 nm) or indium gallium arsenide (InGaAs, range 700 nm–1700 nm). Photodiodes based on organic materials (e.g., bulk detectors) conventionally use a so-called donor-acceptor heterojunction to achieve detection. The spectral range to be detected is determined by the absorption properties of the donor and acceptor materials. Other photodiodes based on organic materials also use a donor-acceptor heterojunction, but the absorption occurs via a so-called charge-transfer (CT) state.In these CT detectors, the absorbing material is a donor-acceptor mixture that provides the CT state.

[0003] Various embodiments relate to an optoelectronic component for detecting electromagnetic radiation with high sensitivity and fine spectral resolution.

[0004] Various embodiments relate to an optoelectronic component which can be configured in such a way that electromagnetic radiation (e.g. an electromagnetic wave, such as light) can be detected by means of the optoelectronic component.

[0005] For example, the optoelectronic component can be configured to generate an electrical signal (e.g., a voltage, a current, such as a photocurrent, etc.) when an electromagnetic wave to be detected strikes the optoelectronic component.

[0006] According to various embodiments, an optoelectronic device can comprise: a substrate; a first electrode arranged on the substrate and having a first reflective surface; a second electrode arranged above the first electrode and having a second reflective surface, wherein the second reflective surface and the first reflective surface are configured to form an optical cavity; a first layer comprising a first material arranged between the first reflective surface and the second reflective surface; a second layer comprising a second material arranged between the first layer and the second reflective surface, wherein the second material differs from the first material;comprising a third layer, a third material which is arranged between the first layer and the second layer, wherein the third material differs from the first material and from the second material;wherein the first material, the second material and the third material are arranged such that, when the optoelectronic device is irradiated by an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode.

[0007] According to various embodiments, a method for manufacturing an optoelectronic device may include: forming a first electrode on a substrate, which has a first reflective surface; forming a second electrode above the first electrode, wherein the second electrode has a second reflective surface, the second reflective surface and the first reflective surface being arranged to form an optical cavity; forming a first layer comprising a first material, which is arranged between the first reflective surface and the second reflective surface; forming a second layer comprising a second material, which is arranged between the first layer and the second reflective surface, wherein the second material differs from the first material;Forming a third layer comprising a third material which is arranged between the first layer and the second layer, wherein the third material differs from the first material and from the second material;wherein the first material, the second material and the third material are arranged such that, when the optoelectronic device is irradiated by an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode.

[0008] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0009] They show Fig. 1 an optoelectronic component in a schematic representation, according to various embodiments; Fig. 2. The energy levels of the first, second and third material in a schematic representation, according to different embodiments; Fig. 3A, Fig. 3B and Fig. 3C a layer arrangement in each a schematic representation, according to different embodiments; Fig. 4A, Fig. 4B, Fig. 4C and Fig. 4D an optoelectronic component and a longitudinal mode of an electromagnetic wave, each in a schematic representation, according to different embodiments; Fig. 5 an optoelectronic component in a schematic representation, according to various embodiments; Fig. 6. An optoelectronic component in a schematic representation, according to various embodiments; and Fig. 7 a flowchart of a device comprising an optoelectronic component, according to various embodiments.

[0010] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0011] For the sake of brevity, this description uses the term "at least one", which can mean: one, exactly one, several (e.g., exactly two, or more than two), many (e.g., exactly three or more than three), etc. The meaning of "several" does not necessarily mean that there are multiple identical elements, but rather elements that are essentially functionally the same.

[0012] The following describes at least some embodiments using the example of an optoelectronic component for detecting an electromagnetic wave (e.g., for detecting electromagnetic radiation). It is understood that the optoelectronic component can also be used in the same or a similar manner for other suitable applications. In general, the optoelectronic component can be configured to convert an incident electromagnetic wave into an electrical signal. For example, the optoelectronic component can be configured to generate an electrical signal (e.g., a photocurrent) in response to an incident electromagnetic wave.

[0013] In this description, the term "to detect" is used to describe a wavelength or electromagnetic wave of interest. For example, a stronger electrical signal can be generated by the optoelectronic component when it is irradiated with a detectable electromagnetic wave (e.g., an electromagnetic wave with a detectable wavelength) than when it is irradiated with a non-detectable electromagnetic wave (e.g., an electromagnetic wave with a non-detectable wavelength). Alternatively or additionally, no electrical signal can be generated by the optoelectronic component when it is irradiated with a non-detectable electromagnetic wave. For example, a detectable wavelength may be found in a spectral range (e.g.,The wavelength of interest may lie within a spectral range of approximately 150 nm to approximately 10 µm (e.g., approximately 400 nm to approximately 2500 nm), and an undetectable wavelength may lie outside this range. For example, both a detectable and an undetectable wavelength may lie within the same spectral range, but a detectable electromagnetic wave may be more strongly absorbed by an absorber material of the optoelectronic device.

[0014] Within the scope of this description, the term "layer" is used to describe both a closed structure and an arbitrarily interrupted structure, which may, for example, consist of a large number of individual parts.

[0015] Currently, no monolithic hybrid systems exist for detecting multiple spectral ranges, such as visible (VIS, e.g., from approximately 400 nm to approximately 700 nm) and near-infrared (NIR, e.g., from approximately 780 nm to approximately 2500 nm) light. Detection of radiation up to 1100 nm is almost exclusively performed using silicon (Si) photodiodes, while the detection of near-infrared radiation at room temperature is predominantly achieved with InGaAs photodiodes. These two approaches cannot be combined in a single miniaturized detector. While existing organic bulk or CT detectors can theoretically cover the VIS and NIR ranges, neither allows for separate optimization of the optical and electrical components, as electrical charge transport always occurs on the absorbing materials. In the case of the organic bulk detector, this is the acceptor and / or donor material.In the case of the CT detector, this is the donor-acceptor mixture that provides the CT state. In bulk and CT systems, radiation absorption occurs on at least one of the two materials or at the interface via the so-called CT state. Charge carrier separation takes place at the interface between donor and acceptor, and the charge carriers are then separately discharged to the acceptor and donor materials. The absorption, charge carrier separation, and transport of the photoactive system are typically determined by the properties of the donor and acceptor materials, so these materials should be optimized for all three subprocesses to achieve the desired high sensitivity. The optimal material proportions (e.g., mixture ratio or layer thicknesses) for good absorption, good charge carrier separation, and good transport are sometimes contradictory.For example, in an optical cavity, it would be possible to use only a small proportion of the absorbing material, resulting in low extinction and consequently a narrow absorption window. However, this means that only a small amount of this material is available for charge carrier transport and is therefore typically suboptimal. CT absorption, for instance, has very low absorption coefficients, which results in low achievable sensitivities and necessitates the use of thick absorber layers. Due to the thickness of these absorber layers, higher-order light is also absorbed in the optical cavity, which can lead to unwanted signals. While bulk detectors can utilize materials with higher absorption coefficients, these should be integrated in a way that ensures good transport properties.This can, in turn, lead to the absorption of higher-order light and the generation of unwanted signals. Furthermore, this often prevents the absorption from being adjusted to the ideal level for the optical cavity, for example, to achieve very narrow detection ranges. Therefore, bulk and CT detectors frequently incorporate additional filters that suppress the unwanted signals and further narrow the spectral range. These optical filters result in high component complexity, poor miniaturization, and consequently, limited applicability.

[0016] An optoelectronic device, as described herein in various embodiments, can be a monolithically integrated device configured to detect electromagnetic waves in the ultraviolet (UV) and / or visible and / or near-infrared and / or infrared (IR) spectral range. For example, the optoelectronic device can be configured to perform spectrally selective detection of electromagnetic waves at room temperature.

[0017] Fig. Figure 1 illustrates an optoelectronic component 100 in a schematic representation, according to various embodiments.

[0018] Detection of an electromagnetic wave using the optoelectronic component 100 This can be achieved, for example, by means of the absorption of the electromagnetic wave (e.g., light) in a third layer. 110(e.g. an absorber layer) of the optoelectronic component 100 these occur, which take place between a first layer 106 (e.g. an acceptor layer) and a second layer 108 (e.g., a donor layer) can be arranged. For example, the first layer can be 106 , the second layer 108 and the third layer 110 a photoactive element 130 of the optoelectronic component 100 form.

[0019] The first layer 106 It can have a first material (e.g., an acceptor material). The second layer 108 It may contain a second material (e.g., a donor material) that differs from the first material. The third layer 110 may include a third material (e.g., an absorber material) that differs from the first material and the second material.

[0020] The arrangement of the photoactive element130 showing the different layers 106 , 108 , 110 , and thus the different materials, enables the separation of the generation and transport of charge carriers, which can occur when the optoelectronic component 100 is irradiated by means of an electromagnetic wave.

[0021] For example, charge carriers of a first type (e.g. electrons) and charge carriers of a second type (e.g. holes) can be in the third layer. 110 generated by absorption of the electromagnetic wave in the third material when the optoelectronic component 100 is irradiated by means of an electromagnetic wave. For example, charge carrier pairs in the third layer can be 110 generated by absorption of the electromagnetic wave in the third material when the optoelectronic component 100is irradiated by means of an electromagnetic wave, whereby a charge carrier pair comprises one charge carrier of the first type and one charge carrier of the second type. The charge carriers of the first type can differ from the charge carriers of the second type.

[0022] For example, the third material (e.g., the atoms or molecules of the third material) can have such energy levels (e.g., energy levels in a valence band and energy levels in a conduction band) that an electron can transition from an energy level in the valence band to an energy level in the conduction band when suitable energy is transferred to it from an incident photon, leaving a hole in the valence band.

[0023] Those in the third layer 110 The generated charge carriers of the first type can be removed by the third layer 110 on the first shift 106 be transferred. Those in the third layer 110The generated charge carriers of the second type can be removed by the third layer 110 on the second shift 108 The first material (e.g., the atoms or molecules of the first material) and the second material (e.g., the atoms or molecules of the second material) can, for example, have energy levels that can be adapted to the energy levels of the third material, so that the transfer of the generated charge carriers of the respective type can take place.

[0024] The transferred charge carriers of the first type can be in the first layer 106 be transported. For example, the transferred load carriers of the first type can be transported in the first layer. 106 to a first electrode 104 (e.g., a cathode) of the optoelectronic component 100 to be transported. The first electrode 104 For example, the one in the first shift 106Collect the transported load carriers of the first type. The transferred load carriers of the second type can be collected in the second layer. 108 be transported. For example, the transferred load carriers of the second type can be transported in the second layer. 108 to a second electrode 112 (e.g., an anode) of the optoelectronic component 100 to be transported. The second electrode 112 For example, the one in the second layer 108 collect the transported load carriers of the second type.

[0025] For example, the first material, the second material, and the third material can be configured in such a way that a current (e.g., a photocurrent) can be generated when the optoelectronic component 100 is irradiated by means of an electromagnetic wave.

[0026] The separation of the different functionalities into the different layers 106 , 108, 110 (e.g., in the different materials) enables individual optimization of the relevant properties of the layers. The first material can be configured to transport charge carriers of the first type. The second material can be configured to transport charge carriers of the second type. The third material can be configured to generate charge carriers of both the first and second types by absorbing an electromagnetic wave. The first and second materials can thus be selected and optimized independently of their absorption properties, because in the first layer 106 and in the second shift 108Ideally, no absorption of the electromagnetic wave should occur. For example, the first and second materials can be configured to absorb a wavelength within a predefined spectral range (e.g., from approximately 150 nm to approximately 10 µm, or from approximately 400 nm to approximately 2500 nm) while exhibiting no electromagnetic wave, whereas the third material can be configured to absorb a wavelength within this spectral range while exhibiting an electromagnetic wave. Similarly, the third material can be selected and optimized independently of its charge carrier transport properties, since no charge carrier transport occurs in the third layer. 110 should take place.

[0027] The first electrode 104 and the second electrode 112 can form an optical cavity within which the first layer 106 , the second layer 108and the third layer 110 They can be arranged. The first electrode 104 It can, for example, be made of a metal (e.g., aluminum, copper, titanium, gold, silver, platinum, etc.) or consist of a metal. Alternatively or additionally, the first electrode can 104 They may also consist of another electrically conductive material, such as an electrically conductive oxide (e.g., indium tin oxide, ITO), an electrically conductive polymer (e.g., an electrically conductive highly reflective polymer, such as a polymer comprising a plurality of nanotubes, etc.), or be made of another electrically conductive material. The first electrode 104 For example, it may contain graphene or consist of graphene. The second electrode 112For example, it can be made of a metal (e.g., aluminum, copper, titanium, gold, silver, platinum, etc.) or consist of a metal. Alternatively or additionally, the second electrode can 112 They may also be made of another electrically conductive material, such as an electrically conductive oxide (e.g., ITO), an electrically conductive polymer (e.g., an electrically conductive highly reflective polymer, such as a polymer comprising a plurality of nanotubes, etc.), etc., or consist of another electrically conductive material. The second electrode 112 It may, for example, contain graphs or consist of graphs.

[0028] The first electrode 104 can be on a substrate 102 (e.g. a rigid substrate, a flexible substrate, etc.) of the optoelectronic component 100 be arranged, and can be a first reflective (e.g. mirrored) surface 104aexhibit. The first reflective surface 104a can, for example, depend on the substrate 102 be turned away. For example, the first electrode can 104 They have a first side and a second side opposite the first. The first side can be the substrate. 102 be facing towards the substrate, and the second side can be removed from the substrate. 102 be turned away. The first reflective surface 104a can be on the second side of the first electrode 104 be arranged.

[0029] The second electrode 112 can be above the first electrode 104 be arranged, and can, for example, be a second reflective surface 112a exhibit the second reflective surface. 112a For example, the first reflective surface 104a be facing it. For example, the second electrode can 112have a first side and a second side opposite the first side. The first side could, for example, correspond to the first electrode. 104 be facing each other, and the second side can, for example, be from the first electrode. 104 be turned away. The second reflective surface 112a can, for example, be done on the first side of the second electrode 112 be arranged.

[0030] The first reflective surface 104a and the second reflective surface 112a They can be arranged in such a way that they form an optical cavity. The second reflective surface 112a and the first reflective surface 104a They can, for example, be arranged opposite each other. The first reflective surface 104a and the second reflective surface 112a can, for example, be parallel (e.g., substantially parallel) to the substrate 102be arranged. The first reflective surface 104a and the second reflective surface 112a They can, for example, be arranged parallel to each other (e.g., essentially parallel).

[0031] For example, the first reflective surface 104a and / or the second reflective surface 112a have a reflection coefficient greater than 0.9 (e.g., greater than 0.95, greater than 0.99, etc.). The first reflective surface 104a and / or the second reflective surface 112a They can, for example, be made of a highly reflective material (e.g., a material with a reflection coefficient greater than 0.95, greater than 0.99, etc.). For example, the first reflective surface can be 104a and / or the second reflective surface 112a contain a metal (e.g., gold, silver, etc.) or are made of a metal.

[0032] In one design, the first reflective surface can be 104a and / or the second reflective surface 112a It must be a dielectric mirror or be configured as a dielectric mirror. The first reflecting surface 104a and / or the second reflective surface 112a They can, for example, consist of a multitude of layers of dielectric materials, whereby the layers can have different refractive indices and / or different thicknesses. In one embodiment, the first reflective surface can be 104a and / or the second reflective surface 112a a combination of a metal mirror and a dielectric mirror. The first reflective surface 104a and / or the second reflective surface 112aThey can, for example, consist of a multitude of layers, wherein the layers may be made of dielectric materials and / or metal, or may contain metal, and wherein the layers may have different refractive indices and / or different thicknesses.

[0033] The geometric distance between the first reflecting surface 104a and the second reflective surface 112a can range from approximately 20 nm to approximately 5000 nm. For example, the geometric distance between the first reflecting surface can be 104a and the second reflective surface 112aThe optical length of the optical cavity can be configured such that only electromagnetic waves of specific wavelengths (e.g., a wavelength to be detected) can propagate within the optical cavity. The optical cavity can thus function, for example, as an optical filter.

[0034] The combination of the first reflective surface 104a and the second reflective surface 112a formed optical cavity with the individual optimization of the properties (e.g. absorption properties, transport properties, etc.) of the layers 106 , 108 , 110 (e.g. the materials of the layers) 106 , 108 , 110 ) can determine the spectral selectivity of the optoelectronic component 100increase. The optoelectronic component 100 It can therefore, for example, be configured to detect electromagnetic waves with spectral selectivity and can enable high spectral resolution and bandwidth. For example, the optoelectronic component 100 Hyperspectral resolution across multiple detection ranges (e.g., across multiple spectral ranges) is ensured. For example, a wavelength to be detected can be selected, and the optoelectronic component 100 can be configured in such a way that it generates an electrical signal only when the optoelectronic component is activated. 100 by means of an electromagnetic wave exhibiting the selected wavelength. For example, the optoelectronic component 100 be set up in such a way that it generates an electrical signal even when the optoelectronic component 100by means of an electromagnetic wave having a wavelength close to the selected wavelength (e.g. in a spectral window around the wavelength to be detected) is irradiated (e.g. the wavelength and the selected wavelength may differ for less than 50 nm and / or less than 20 nm and / or less than 10 nm and / or less than 5 nm, etc.).

[0035] The first layer 106 , the second layer 108 and the third layer 110 can between the first reflective surface 104a and the second reflective surface 112a be arranged, clearly within the area defined by the reflective surfaces 104a , 112a formed optical cavity.

[0036] The first layer 106 can be between the first reflective surface 104a and the second reflective surface 112a (e.g. above the first electrode) 104) be arranged. The second layer 108 can be between the first layer 106 and the second reflective surface 112a (e.g. above the first layer) 106 ) be arranged. The third layer 110 can be between the first layer 106 and the second layer 108 be arranged.

[0037] The third layer 110 can, for example, directly on the first layer 106 be arranged in this way. The third layer can thus be arranged. 110 in physical contact (e.g., direct physical contact) with the first layer 106 be arranged. The second layer 108 can, for example, be applied directly to the third layer 110 be arranged in this way. The third layer can thus be arranged. 110 in physical contact (e.g., direct physical contact) with the second layer 108It is understood that in this configuration the third material can be in physical contact with the first material, and that the third material can be in physical contact with the second material.

[0038] In one configuration, the first layer can 106 in physical contact (e.g., direct physical contact) with the second layer 108 It is understood that in this configuration, the first material can be in physical contact with the second material. For example, the first layer can be 106 and the second layer 108 form an interface (e.g., a charge separation interface). Such an interface can, for example, be configured to separate charge carrier pairs (e.g., electron-hole). For example, a charge carrier of the first type can be transferred to the first layer. 106 be transferred and a charge carrier of the second type onto the second layer108 are transferred when a charge carrier pair is transferred to the interface between the first layer 106 and the second layer 108 is coming. For example, the first shift 106 and the second layer 108 form a hetero junction (e.g., a donor-acceptor hetero junction).

[0039] The third layer 110 can occur at the interface between the first layer 106 and the second layer 108 be arranged. The third layer 110 can the interface between the first layer 106 and the second layer 110 completely (e.g., from the third layer) 110 The covered part can represent 100% of the interface between the first layer 106 and the second layer 108 be) or at least partially (e.g., the third layer) 110The covered part can be 5%, 10%, 50%, 75%, etc. of the interface between the first layer 106 and the second layer 108 cover his / her).

[0040] In one configuration, for example, the first layer 106 , the second layer 108 and the third layer 110 at least partially mixed together. The first layer 106 and the third layer 110 They can, for example, be at least partially mixed together. The second layer 108 and the third layer 110They can, for example, be at least partially mixed together. It is understood that the first material, the second material, and the third material can be at least partially mixed together. Thus, the first material and the second material can be at least partially mixed together, and / or the first material and the third material can be at least partially mixed together, and / or the second material and the third material can be at least partially mixed together.

[0041] The detection of the electromagnetic wave can be achieved, for example, by applying a voltage (e.g., a bias voltage) to the optoelectronic component. 100 be supported. The applied voltage can, for example, be that of the optoelectronic component. 100 The generated electrical signal is amplified when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0042] For example, a first electrical potential can be applied to the first electrode. 104 to be applied (e.g. the first electrode) 104 (can be coupled to a first voltage source). Alternatively or additionally, a second electrical potential can be applied to the second electrode. 112 to be applied (e.g. the second electrode) 112 (can be coupled to a second voltage source). The first potential can differ from the second potential; for example, the second potential can be smaller or larger than the first potential. The difference between the potential applied to the first electrode 104 applied potential and the potential connected to the second electrode 112 The applied potential results in the applied voltage (e.g., the applied pre-voltage).

[0043] It goes without saying that various combinations of applied potentials are possible. For example, the first electrode can104 be coupled to ground, and a positive or negative potential can be applied to the second electrode. 112 can be applied. Alternatively, the second electrode can be 112 be coupled to ground, and a positive or negative potential can be applied to the first electrode. 104 can be applied. Alternatively, a positive or negative potential can be applied to the first electrode. 104 a positive or negative potential can be applied to the second electrode. 112 be created.

[0044] Fig. Figure 2 illustrates the energy levels of the first material, the second material and the third material in a schematic representation, according to different embodiments.

[0045] The first material, the second material, and the third material can be selected such that the energy levels of the materials allow the transfer of charge carriers from the third layer. 110on the first shift 106 and on to the second shift 108 in an efficient manner, or in other words, in an energy-efficient manner, as will be explained in more detail below. Fig. 2. Charge carriers of the first type are marked with a “-” and charge carriers of the second type are marked with a “+”.

[0046] The first material and the third material can be arranged such that charge separation of the charge carriers of the first type occurs at an interface between the first layer. 106 and the third layer 110 This occurs when the optoelectronic component 100 is irradiated by means of an electromagnetic wave. For example, a charge carrier of the first type can be removed from the third layer. 110 on the first shift 106 be transferred if someone in the third shift 110generated charge carrier pair to the interface between the first layer 106 and the third layer 110 The first and third materials can, for example, also be arranged in such a way that the transfer of charge carriers of the second type from the third layer is prevented. 110 on the first shift 106 is prevented if someone in the third shift 110 generated charge carrier pair to the interface between the first layer 106 and the third layer 110 This is coming. For example, the first material and the third material can be arranged in such a way that the material in the third layer... 110 generated charge carriers of the second type at an interface between the first layer 106 and the third layer 110 will be blocked (e.g., not transmitted) if the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0047] Similarly, the second and third materials can be arranged such that charge separation of the charge carriers of the second type occurs at an interface between the second layer. 108 and the third layer 110 This occurs when the optoelectronic component 100 is irradiated by means of an electromagnetic wave. For example, a charge carrier of the second type can be removed from the third layer. 110 on the second shift 108 be transferred if someone in the third shift 110 generated charge carrier pair to the interface between the second layer 108 and the third layer 110 The second and third materials can, for example, also be arranged in such a way that the transfer of charge carriers of the first type from the third layer is prevented. 110 on the second shift 108 is prevented if someone in the third shift 110generated charge carrier pair to the interface between the second layer 108 and the third layer 110 This is coming. For example, the second and third materials can be arranged in such a way that the material in the third layer... 110 generated charge carriers of the first type at an interface between the second layer 108 and the third layer 110 be blocked if the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0048] These processes can be achieved, for example, by appropriately adjusting the energy levels of the materials. For instance, the first and third materials can be selected such that the energy levels of the first and third materials facilitate the transfer of charge carriers of the first type from the third layer. 110 on the first shift 106enable and the transfer of the second type of charge carriers from the third layer 110 on the first shift 106 hinder. For example, it can be energetically advantageous for a charge carrier of the first type to escape from the third layer. 110 on the first shift 106 to be transferred, and can be energetically unfavorable for a charge carrier of the second type, from the third layer 110 on the first shift 106 to be transferred.

[0049] Similarly, the second and third materials can be selected such that the energy levels of the second material and the energy levels of the third material allow the transfer of charge carriers of the second type from the third layer. 110 on the second shift 108 enable and the transfer of the first type charge carriers from the third layer 110 on the second shift 108hinder. For example, it can be energetically advantageous for a charge carrier of the second type to escape from the third layer. 110 on the second shift 108 to be transferred, and can be energetically unfavorable for a charge carrier of the first type, from the third layer 110 on the second shift 108 to be transferred.

[0050] The adjustment of energy levels can also be achieved, for example, by means of additional materials (e.g., spacer materials) which can be used to modify the chemical structure of the first, second, and / or third material. For example, the first material can be modified (e.g., doped) with a first spacer material. The first material modified in this way can thus be configured, for example, to be energetically more favorable for a charge carrier of the first type to move from the third layer.110 on the first shift 106 to be transferred as if the first layer 106 the unmodified first material. The first material modified in this way can, for example, also be configured in such a way that it is energetically less favorable for a charge carrier of the second type from the third layer. 110 on the first shift 106 to be transferred as if the first layer 106 The unmodified first material is present. It is understood that the first material and / or the second material and / or the third material can be modified with any suitable spacer materials so that the energy levels of the materials can be adjusted such that the transfer of charge carriers of the first type from the third layer 110 on the first shift 106 and / or the transfer of charge carriers of the second type from the third layer 110on the second shift 108 This can be achieved. The first material and / or the second material and / or the third material can, for example, also be modified with any suitable spacer materials so that the energy levels of the materials can be adjusted in such a way that the transfer of charge carriers of the second type from the third layer 110 on the first shift 106 and / or the transfer of charge carriers of the first type from the third layer 110 on the second shift 108 can be prevented.

[0051] To achieve efficient charge separation between the third layer 110 and the first shift 106 To provide, the third material can occupy a maximally occupied molecular orbital. 220-1 (in English "highest occupied molecular orbital", HOMO) which has a higher energy than the highest occupied molecular orbital 216-1(HOMO) of the first material. The third material can also, for example, have a lowest unoccupied molecular orbital. 220-2 (in English "lowest unoccupied molecular orbital", LUMO), which has a higher energy than the lowest unoccupied molecular orbital 216-2 (LUMO) of the first material. Thus, it can be energetically favorable for a charge carrier of the first type to move from the third layer. 110 on the first shift 106 to be transferred.

[0052] To achieve efficient charge separation between the third layer 110 and the second layer 108 To provide, the third material can occupy a maximally occupied molecular orbital. 220-1 (HOMO), which has a lower energy than the highest occupied molecular orbital 218-1 (HOMO) of the second material. The third material can also, for example, have a lowest unoccupied molecular orbital. 220-2(LUMO), which has a lower energy than the lowest unoccupied molecular orbital 218-2 (LUMO) of the second material. Thus, it can be energetically favorable for a charge carrier of the second type to move from the third layer. 110 on the second shift 108 to be transferred. It is understood that different arrangements of the HOMO-LUMO molecular orbitals are also possible.

[0053] The design of the third layer 110 and the properties (e.g. the absorption properties) of the third material can be selected, for example, based on the wavelength or wavelengths which are measured by the optoelectronic component 100 to be detected. Optimal absorption can be achieved by selecting the third material and its thickness (e.g., layer thickness). 110be provided. The thickness of a layer can, for example, be defined as the size of the layer along the direction 103 be seen.

[0054] The third material can, for example, be configured to generate charge carriers of the first and second type by absorbing electromagnetic waves and exhibiting a wavelength (e.g., a wavelength to be detected) in a specific spectral range (e.g., in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range, etc.). For example, the third material can be configured to generate charge carriers of the first and second type by absorbing electromagnetic waves and exhibiting a wavelength in a spectral range from approximately 150 nm to approximately 10 µm, for example, from approximately 400 nm to approximately 2500 nm.

[0055] In one configuration, the first layer can 106 be transparent. For example, the first layer can be 106 be set up in such a way that the first shift 106 can transmit an electromagnetic wave (e.g., an electromagnetic wave to be detected) if the optoelectronic component 100 is irradiated by means of an electromagnetic wave. For example, the first layer can be 106 be transparent in a desired spectral range. For example, the first layer can 106 be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first layer can be 106 It should be transparent in a spectral range from approximately 150 nm to approximately 10 µm, for example, from approximately 400 nm to approximately 2500 nm. For example, the first layer can be 106The third material is configured to generate charge carriers of the first type and the second type by absorbing electromagnetic waves of a wavelength in a selected spectral range. In one embodiment, the first layer can be transparent to electromagnetic waves of a wavelength in a selected spectral range. 106 be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first layer can be 106 be translucent in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0056] In one design, the second layer can 108 be transparent. For example, the second material can be designed so that the second layer 108can transmit an electromagnetic wave (e.g., an electromagnetic wave to be detected) if the optoelectronic component 100 is irradiated by means of an electromagnetic wave. For example, the second layer can 108 be transparent in a desired spectral range. For example, the second layer can 108 be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the second layer can be 108 It should be transparent in a spectral range from approximately 150 nm to approximately 10 µm, for example, from approximately 400 nm to approximately 2500 nm. For example, the second layer can 108The third material is configured to generate charge carriers of the first type and the second type by absorbing electromagnetic waves of a wavelength in a selected spectral range. In one embodiment, the second layer can be transparent to electromagnetic waves of a wavelength in a selected spectral range. 108 be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the second layer can be 108 be translucent in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0057] For example, the third layer can 110 be set up in such a way that load carrier transport in the third shift 110generated charge carriers of the first type and the second type in the third layer 110 is prevented. For example, the third layer 110 It should be designed to be so thin that no load carrier transport takes place on it.

[0058] Due to the small layer thickness of the third layer 110 and the directly adjacent layers of the first and second materials; no load carrier transport should take place on the third material; however, optimal load carrier separation and transport can be ensured independently of the third material through the choice of the first and second materials. The layer thickness of the third layer 110 can the spectral selectivity of the optoelectronic component 100 influence the thicker the third layer. 110The larger the spectral window, the wider it can be around the desired wavelength of the wave to be detected (e.g., the light to be detected).

[0059] The amount of third material per unit area can be expressed as the effective layer thickness if its density is known. The effective layer thickness corresponds to the thickness of a homogeneous layer with the same mass per unit area as the amount of third material. The minimum absorption of the layer at the selected wavelength should be greater than 1 × 10⁻⁶. -6 (i.e., one thousandth of a percent of the incident electromagnetic wave is absorbed). For absorber materials with high extinction coefficients (also denoted as absorption index) of k=1, the corresponding effective layer thickness is 1×10 -5 nm. This means that smaller layer thicknesses lead to a minimum absorption of less than the minimum desired 1×10 -6This minimum required layer thickness scales inversely proportionally with the extinction coefficient of the third material used. For example, the effective layer thickness for materials with k=0.1 can be 1×10 -5 nm, for materials with k=0.01 1×10 -4 nm, etc.

[0060] For example, the third layer can 110 be thinner than 15 nm (e.g., thinner than 5 nm, thinner than 1 nm, etc.). For example, the third layer can be 110 a layer thickness of approximately 1×10 -5 nm to approximately 10 nm. The third layer 110 can be thinner than the first layer 106 be the first shift 106 It can have a layer thickness of approximately 10 nm to approximately 500 nm (e.g., from approximately 30 nm to approximately 400 nm, from approximately 50 nm to approximately 200 nm, etc.). The third layer 110 can be thinner than the second layer 108 be the second layer 108The layer thickness can range from approximately 10 nm to approximately 500 nm (e.g., from approximately 30 nm to approximately 400 nm, from approximately 50 nm to approximately 200 nm, etc.). The third material may also be present in quantities that are typically considered impurities of the first and second materials.

[0061] The third material can have a higher absorption coefficient than the first material. The third material can have a higher absorption coefficient than the second material. For example, the third material can have an absorption index of 1 or greater than 1. The minimum absorption of the third layer 110 For example, 1×10 -6 be or larger than 1×10 -6 For example, the minimum absorption of the third material can be 1×10 -6 be or larger than 1×10 -6 be.

[0062] The absorption index of the third material can, for example, depend on the wavelength of the electromagnetic wave. For instance, the third material can be configured such that it has a higher absorption index at the wavelength to be detected than at all other wavelengths (e.g., those not to be detected). Alternatively, the third material can be configured such that electromagnetic waves of a wavelength to be detected are absorbed more strongly than electromagnetic waves of a different wavelength. For example, the third material can have a first absorption index for a first (e.g., to be detected) wavelength and a second absorption index for a second (e.g., not to be detected) wavelength, with the first absorption index being higher than the second.

[0063] The following are various exemplary options for selecting the materials for the first, second and third layers. 106 , 108 , 110 The example shown is not applicable. It is understood that other suitable materials or combinations of materials can also be selected.

[0064] The first material can be an organic material (e.g., a polymer). For example, the first material can be a naphthalenetetracarboxylic acid diimide derivative. Alternatively, the first material can be an inorganic material (e.g., an inorganic semiconductor material). In one embodiment, the first material can be a compound (e.g., an organic compound, such as a polymeric compound, an inorganic compound, etc.). For example, the first material can be a compound of at least one organic material and at least one inorganic material. The first material can be doped (e.g., n-doped). The first material can be at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BPhen:Cs; BCP:Yb; Alq3; NTCDA; Me-NTCDI; HATNA-Cl6.

[0065] The second material can be an organic material (e.g., a polymer). For example, the second material can be an amine. For example, the second material can be a carboxylic acid derivative. Alternatively, the second material can be an inorganic material (e.g., an inorganic semiconductor material). In one embodiment, the second material can be a compound (e.g., an organic compound such as a polymer, an inorganic compound, etc.). For example, the second material can be a compound of at least one organic material and at least one inorganic material. The second material can be doped (e.g., p-doped). The second material can be at least one material from the following list of materials or a compound of two or more materials from the following list of materials.exhibit: BF-DPB; a-NPB; BPAPF; 1-TNATA; 2-TNATA; 4P-TPD; Di-NPD; m-MTDATA; MeO-TPD; PV-TPD; Spiro-MeO-TPD; Spiro-TAD; Spiro-TTB; TAPC.

[0066] The third material can be an organic material (e.g., a polymer). For example, the third material can be graphene. Alternatively, the third material can be an inorganic material (e.g., an inorganic semiconductor). In one embodiment, the third material can be a compound (e.g., an organic compound, such as a polymer, an inorganic compound, etc.). For example, the third material can be a compound of at least one organic material and at least one inorganic material.

[0067] The third material may be at least one material from the following list of materials or a compound of two or more materials from the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; C16SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0068] For example, the following combinations of materials can be used to form the layers. 106 , 108 , 110 (The combinations describe possible materials for the first layer) 106 / the third layer 110 / the second layer 108): HATNA-Cl6 / DCV2-5T / BF-DPB; HATNA-Cl6 / ZnPC / BF-DPB; HATNA-Cl6 / C60 / a-NPB; HATNA-Cl6 / C60 / BPAPF; NTCDA / DCV2-5T / BF-DPB; NTCDA / ZnPC / BF-DPB; NTCDA / C60 / a-NPB; NTCDA / C60 / BPAPF. These combinations of materials can enable the efficient (e.g., energetically favorable) generation and transport of charge carriers of the first type and charge carriers of the second type. It is understood that other possible combinations can be used in the same or a similar manner.

[0069] As in Fig. As shown in Figure 2, the combination of the first, second and third materials can be selected in such a way as to enable efficient charge separation.

[0070] Fig. 3A, Fig. 3B and Fig. Figures 3C illustrate a layer arrangement in a schematic representation, according to different embodiments.

[0071] The in Fig. 3A to Fig. 3C shown configurations of the third layer 110 These are examples only. It goes without saying that other, similar or identical, possible configurations of the third layer exist. 110 can be used.

[0072] The third layer 110 can be a closed layer or arranged as a closed layer, as for example in Fig. 3A is shown. The third layer 110 It can, for example, be arranged in such a way that it forms the interface between the first layer 106 and the second layer 108 covers evenly.

[0073] In one configuration, the third layer can 110 be a non-closed layer or arranged as a non-closed layer, as for example in Fig. 3B is shown. The third layer can be clearly illustrated. 110have at least one gap (e.g., a multitude of gaps). For example, the third layer can 110 consist of a large number of isolated parts (e.g., islands). In this configuration, the isolated parts can be homogeneously distributed or inhomogeneously distributed. For example, the third layer 110 exhibit a homogeneous distribution of islands or an inhomogeneous distribution of islands (of the same or different size and / or shape).

[0074] For example, the third layer can 110 consist of at least one two-dimensional structure (e.g., a monolayer, such as a graphene monolayer). For example, the third layer can 110 consist of a multitude of two-dimensional structures (e.g., a multitude of stacked monolayers).

[0075] Alternatively or additionally, the third layer can 110consist of at least one one-dimensional structure (e.g., a nanoparticle, such as a metal nanoparticle, a nanotube, a nanofiber, a nanorod, etc.). In one embodiment, the third layer can 110 consist of a multitude of one-dimensional structures (e.g., a multitude of nanoparticles, such as metal nanoparticles, a multitude of nanotubes, a multitude of nanofibers, a multitude of nanorods, etc.), as in, for example, Fig. 3C is shown. The one-dimensional structures of the multitude of one-dimensional structures can be ordered (e.g., a symmetric array of one-dimensional structures, a symmetric matrix of one-dimensional structures, etc.) or unordered in the third layer. 110 be arranged.

[0076] In one configuration, for example, the first layer 106 and the second layer 108at least partially mixed together and the third layer 110 can consist of a variety of one-dimensional structures which may be dispersed in the resulting mixed layer.

[0077] In one configuration, the third layer can 110 consist of at least one quantum dot structure (e.g., a colloidal quantum dot structure, such as a colloidal PbS quantum dot structure). The at least one quantum dot structure can, for example, contain a sulfide (e.g., PbS (lead(II) sulfide)). The third layer 110It can also consist, for example, of a multitude of quantum dot structures. For instance, colloidal quantum dot structures made of PbS (lead(II) sulfide) with a diameter of a few nanometers can be used for detection in the visible and near-infrared spectral ranges due to their adjustable absorption (achieved through the diameter). The quantum dot structures can be arranged in an ordered manner (e.g., a symmetric array of quantum dot structures, a symmetric matrix of quantum dot structures, etc.) or in a disordered manner in the third layer. 110 be arranged.

[0078] For example, a molar areal density can be used (e.g., as mol / cm²). 2 or as number of molecules / cm² 2 ) to determine a minimum amount of the third material. For example, the third layer can 110 at least 1x10 9 Molecules / cm² 2 of the third material or 2.4·10 -15 mol / cm 2of the third material. This minimum required amount scales inversely proportionally with the extinction coefficient of the third material used.

[0079] At least one additional element (e.g., a nanoparticle, etc.), which may contain a fourth material (e.g., a metal), can be incorporated into the third layer. 110 The elements may be arranged (e.g., dispersed). The at least one additional element may, for example, be configured to increase the absorption of the electromagnetic wave in the third material by optical near-field amplification. In one embodiment, several additional elements (e.g., a multitude of nanoparticles, etc.), which may comprise the fourth material, can be arranged in the third layer. 110 be or will be arranged.

[0080] Fig. 4A, Fig. 4B, Fig. 4C and Fig. 4D illustration of an optoelectronic component 100and a longitudinal mode of an electromagnetic wave, each in a schematic representation, according to various embodiments.

[0081] For the sake of clarity, only the third layer is shown. 110 in the Fig. 4A to Fig. 4D shown. It goes without saying that the other components of the optoelectronic device are also shown. 100 (e.g. the first shift) 106 , the second layer 108 , etc.) may be present. The in Fig. 4A to Fig. 4D shown placements of the third layer 110 These are examples only. It is understood that other possible placements of the third layer exist in the same or a similar way. 110 can be used.

[0082] The first reflective surface 104a and the second reflective surface 112acan be arranged in such a way that one or more longitudinal modes of the electromagnetic wave are located between the first reflecting surface 104a and the second reflective surface 112a are generated when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0083] Within the area of ​​the first reflective surface 104a and the second reflective surface 112aWithin the formed optical cavity, only standing waves can be present for which the optical length of the optical cavity is an integer multiple of half the wavelength of the waves. Waves with other wavelengths will be eliminated due to destructive interference. The optical length (e.g., optical path length) can be viewed as the geometric length of the path traversed by the electromagnetic wave, multiplied by the respective refractive indices of the media traversed. For example, the optical length of the path from the first reflecting surface can be... 104a and the second reflective surface 112a formed optical cavity as the thickness of the layers arranged within the cavity (e.g. the first layer) 106 , the second layer 108 and the third layer 110 ) can be seen, multiplied by the respective refractive indices of the layers. 106 , 108 ,110 .

[0084] The longitudinal modes correspond to the wavelengths (or frequencies) of an electromagnetic wave allowed within the cavity. It is understood that a multitude of longitudinal modes for an electromagnetic wave can exist within the optical cavity, and these longitudinal modes can be of different orders (e.g., first order, second order, third order, etc.) corresponding to different wavelengths of the electromagnetic wave (e.g., one fundamental wavelength, half the fundamental wavelength, one-third the fundamental wavelength, etc.).

[0085] The longitudinal modes of the electromagnetic wave can have nodes axially along the length of the optical cavity (e.g., along the direction 103The different longitudinal modes of the electromagnetic wave can, for example, exhibit maxima (e.g., a maximum of the optical field, a multitude of maxima of the optical field) and minima (e.g., a minimum of the optical field, a multitude of minima of the optical field), which are located in different positions within the optical cavity.

[0086] The third layer 110 can be arranged in such a way that it is located in a maximum of a longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of the electromagnetic wave, when the optoelectronic component 100is irradiated by means of an electromagnetic wave. In this configuration, an electromagnetic wave (e.g., an electromagnetic wave to be detected) having a wavelength assigned to this longitudinal mode can be more strongly absorbed in the third material (e.g., in the third layer). 110 ) are absorbed as electromagnetic waves exhibiting wavelengths that are not assigned to this longitudinal mode. Visually, the corresponding electrical signal can be amplified.

[0087] For example, the first layer 106 and the second layer 108 be arranged in such a way that a maximum of a longitudinal mode of the electromagnetic wave (e.g. a longitudinal mode of the first order, or a longitudinal mode of an order higher than the first order) is located between the first layer 106 and the second layer 108 is located when the optoelectronic component 100is irradiated by means of the electromagnetic wave.

[0088] Fig. 4A, Fig. 4C and Fig. 4D shows, for example, that the third layer 110 can be arranged in such a way that it is located in the maximum of the longitudinal mode of the first order and / or in a maximum of the longitudinal mode of the second order and / or in a maximum of the longitudinal mode of the third order.

[0089] The other wavelengths, which are assigned to other longitudinal modes (e.g., longitudinal modes of other orders), become weaker in the third material (e.g., in the third layer). 110 ) absorbs. For example, the third layer 110It should be arranged such that it is located at a minimum (e.g., at a node) of a longitudinal mode (e.g., a first-order longitudinal mode, or a longitudinal mode of a higher order than first order) of an electromagnetic wave. The corresponding electrical signals can be omitted for visual reference. For example, the third layer 110 They can be placed arbitrarily within the optical cavity, which means that signals can easily be masked by unwanted orderings.

[0090] Fig. Figure 4B shows, for example, that the third layer 110 can be arranged in such a way that it is located in the minimum of the second-order longitudinal mode.

[0091] For example, the third layer can 110be arranged such that it is located in a maximum of a first longitudinal mode (e.g., a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of the electromagnetic wave, and that it is located in a minimum of a second longitudinal mode (e.g., a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of the electromagnetic wave when the optoelectronic component 100 is irradiated by means of the electromagnetic wave, whereby the order of the first longitudinal mode differs from the order of the second longitudinal mode. Fig. 4A and Fig. 4B shows, for example, that the third layer 110 can be arranged in such a way that it is located at the maximum of the first-order longitudinal mode and at the minimum of the second-order longitudinal mode.

[0092] The placement of the third layer 110 It can therefore also have the effect of an optical filter, in which the electromagnetic waves exhibiting a wavelength to be detected are strongly absorbed in the third material (e.g., in the third layer). 110 ) can be absorbed, so that the signal from the optoelectronic component 100 The generated electrical signal can be amplified. For example, the electromagnetic waves, having a different (e.g., undetectable) wavelength, may be weaker in the third material (e.g., in the third layer). 110 ) are absorbed, so that the signal from the optoelectronic component 100 The generated electrical signal can be suppressed.

[0093] For example, an external quantum efficiency (EQE) of the optoelectronic device can be 100 different wavelengths can be selected by means of the placement of the third layer. 110and / or by selecting the properties of the third layer 110 (e.g., the selection of the layer thickness of the third layer) 110 , the selection of the third material, etc.).

[0094] Fig. Figure 5 illustrates an optoelectronic component 100 in a schematic representation, according to various embodiments.

[0095] The optoelectronic component 100 Furthermore, a first transport layer can 524 (e.g. an electron transport layer) which is located between the first reflective surface 104a (e.g. the first electrode) 104 ) and the first shift 106 can be arranged. The first transport layer 524 It can, for example, be set up in such a way that, when the optoelectronic component 100 is irradiated by means of the electromagnetic wave that is in the first layer 106transported load carriers of the first type from the first layer 106 on the first transport layer 524 can be transferred. For example, those in the first transport layer 524 transferred charge carriers of the first type in the first transport layer 524 to the first electrode 104 be transported.

[0096] The optoelectronic component 100 Furthermore, a second transport layer can be added. 526 (e.g., a hole transport layer) which is located between the second reflective surface 112a (e.g. the second electrode) 112 ) and the second layer 108 can be arranged. The second transport layer 526 It can, for example, be set up in such a way that, when the optoelectronic component 100 is irradiated by means of the electromagnetic wave that is in the second layer 108transported load carriers of the second type from the second layer 108 to the second transport layer 526 can be transferred. For example, those in the second transport layer 526 transferred charge carriers of the second type in the second transport layer 526 to the second electrode 112 be transported.

[0097] The first transport layer 524 and the second transport layer 526 can facilitate the transport of charge carriers to the electrodes 104 , 112 facilitate. For example, the first transport layer can 524 be set up in such a way that the load carriers of the first type move more quickly into the first transport layer 524 as in the first shift 106 can be transported. For example, the second transport layer 526be set up in such a way that the load carriers of the second type move more quickly into the second transport layer 526 as in the second shift 108 can be transported.

[0098] In one embodiment, the first transport layer can 524 For example, it could be doped (e.g., n-doped). For example, the second transport layer could be 526 be doped (e.g., p-doped). The doping of the first transport layer 524 and / or the second transport layer 526 This can, for example, facilitate the transport of charge carriers to the electrodes 104 , 112 further facilitate.

[0099] In one embodiment, for example, the first transport layer can 524 furthermore, be arranged in such a way that charge carriers of the second type are located at an interface between the first layer 106 and the first transport layer 524can be blocked. For example, the first transport layer can be blocked. 524 be arranged in such a way that the transfer of charge carriers of the second type from the first layer 106 on the first transport layer 524 can be prevented. For example, the second transport layer can 526 furthermore, be arranged in such a way that charge carriers of the first type are located at an interface between the second layer 108 and the second transport layer 526 can be blocked. For example, the second transport layer can be blocked. 526 be arranged in such a way that the transfer of charge carriers of the first type from the second layer 108 to the second transport layer 526 This can be prevented. The transport layers can therefore also act as block layers (e.g., hole block layer and / or electron block layer).

[0100] For example, the optoelectronic component100 an encapsulation 528 exhibiting features that extend beyond the second electrode 112 It can be arranged. The encapsulation 528 For example, the second electrode can 112 at least partially cover. In one embodiment, the encapsulation can 528 for example the optoelectronic component 100 at least partially encapsulate. For example, encapsulation can 528 be designed in such a way that the various components of the optoelectronic device 100 by means of encapsulation 528 can be at least partially covered.

[0101] The optoelectronic component 100 It can, for example, be set up in such a way that it generates an electrical signal when the optoelectronic component 100 by means of the electromagnetic wave through the substrate 102 and / or through encapsulation 528is irradiated. The optoelectronic component 100 can therefore be penetrated by its lower side (e.g., by the substrate). 102 ) and / or through its upper side (e.g., through encapsulation) 528 ) be irradiated.

[0102] The substrate 102 can be transparent. For example, the substrate can be 102 be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the substrate can be 102 be transparent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm). For example, the substrate can be 102 be set up in such a way that the optoelectronic component 100 incident electromagnetic wave through the substrate 102 can drive without being driven off the substrate 102to be scattered. For example, the substrate can be 102 be set up in such a way that the substrate 102 can transmit an electromagnetic wave if the optoelectronic component 100 by means of the electromagnetic wave through the substrate 102 is irradiated. For example, the substrate can be 102 be arranged in such a way that the electromagnetic wave in the third material (e.g. in the third layer) 110 ) is absorbed when the optoelectronic component 100 by means of the electromagnetic wave through the substrate 102 is irradiated. In one configuration, the substrate can 102 be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range.

[0103] For example, the substrate can 102be translucent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm).

[0104] The substrate 102 It may consist of a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the substrate may 102 a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.). Alternatively or additionally, the substrate can be 102 For example, it could be an electrically conductive material (e.g., a metal oxide, a metal such as aluminum, copper, gold, etc.). For example, the substrate could be 102 contain a semiconductor material (e.g. silicon).

[0105] The encapsulation 528 can be transparent. For example, the encapsulation can be 528be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the encapsulation can 528 be transparent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm). For example, the encapsulation can 528 be set up in such a way that the optoelectronic component 100 incident electromagnetic wave through the encapsulation 528 can drive without the encapsulation 528 to be scattered. For example, encapsulation can 528 be set up in such a way that the encapsulation 528 can transmit an electromagnetic wave if the optoelectronic component 100 by means of the electromagnetic wave through the encapsulation 528is irradiated. For example, encapsulation can 528 be arranged in such a way that the electromagnetic wave in the third material (e.g. in the third layer) 110 ) is absorbed when the optoelectronic component 100 by means of the electromagnetic wave through the encapsulation 528 is irradiated. In one embodiment, the encapsulation can be 528 be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the encapsulation can 528 be translucent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm).

[0106] The encapsulation 528 It may consist of a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the encapsulation may 528contain a polymer (e.g. polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.).

[0107] The substrate 102 It can serve as a filter (e.g., as an optical filter). For example, the substrate can 102 be arranged in such a way that electromagnetic waves are transmitted via the substrate 102 can be blocked if the optoelectronic component 100 through the substrate 102 is irradiated. For example, the substrate can be 102 be arranged in such a way that electromagnetic waves exhibiting a wavelength that cannot be detected by means of the substrate 102 can be blocked and / or exhibit only electromagnetic waves, a wavelength to be detected through the substrate 102 can drive. For example, the substrate 102They have a first transmission coefficient for a first wavelength (e.g., a wavelength to be detected) and a second transmission coefficient for a second wavelength (e.g., a wavelength not to be detected). For example, the first transmission coefficient can be higher than the second transmission coefficient.

[0108] Alternatively or additionally, filter layers can be incorporated into the optoelectronic component. 100 They can be arranged. For example, filter layers can be placed on the underside of the optoelectronic component. 100 can be arranged. In one embodiment, for example, a first filter layer can be placed over a first side of the substrate. 102 (e.g. the first side of the substrate) 102 can from the first electrode 104 (turned away) and / or a second filter layer over a second side of the substrate. 102 (e.g. between the substrate 102and the first electrode 104 ) be or will be arranged. The first filter layer and / or the second filter layer can, for example, be configured such that electromagnetic waves can be blocked by means of the first filter layer and / or by means of the second filter layer when the optoelectronic component 100 through the substrate 102 is irradiated. For example, the first filter layer and the second filter layer can be arranged such that electromagnetic waves having a wavelength that cannot be detected can be blocked by the first filter layer and / or by the second filter layer, and / or only electromagnetic waves having a wavelength that can be detected can pass through the first filter layer and / or the second filter layer.

[0109] The encapsulation 528 It can serve as a filter (e.g., as an optical filter). For example, encapsulation can528 be arranged in such a way that electromagnetic waves are contained by means of encapsulation 528 can be blocked if the optoelectronic component 100 through encapsulation 528 is irradiated. For example, encapsulation can 528 be arranged in such a way that electromagnetic waves exhibiting an undetectable wavelength are contained by means of encapsulation 528 can be blocked and / or only exhibit electromagnetic waves, a wavelength to be detected through encapsulation 528 They can drive. For example, the encapsulation 528 They have a first transmission coefficient for a first wavelength (e.g., a wavelength to be detected) and a second transmission coefficient for a second wavelength (e.g., a wavelength not to be detected). For example, the first transmission coefficient can be higher than the second transmission coefficient.

[0110] Alternatively or additionally, filter layers can be applied to the upper side of the optoelectronic component. 100 can be arranged. In one embodiment, for example, a third filter layer can be placed above a first side of the encapsulation. 528 (e.g. the first side of the encapsulation) 528 can from the second electrode 112 (turned away) and / or a fourth filter layer over a second side of the encapsulation 528 (e.g. between the encapsulation 528 and the second electrode 112 ) be or will be arranged. The third and / or fourth filter layer can, for example, be configured such that electromagnetic waves can be blocked by means of the third and / or fourth filter layer when the optoelectronic component 100 through encapsulation 528is irradiated. For example, the third and fourth filter layers can be arranged in such a way that electromagnetic waves having a wavelength that cannot be detected can be blocked by the third and / or the fourth filter layer and / or only electromagnetic waves having a wavelength that can be detected can pass through the third and / or the fourth filter layer.

[0111] The first electrode 104 and / or the second electrode 112 They can be transparent (e.g., at least semi-transparent) in the spectral range of the wavelength to be detected. For example, the first electrode can be 104 and / or the second electrode 112 be transparent (e.g., at least semi-transparent) in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first electrode can104 and / or the second electrode 112 be transparent (e.g., at least semi-transparent) in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm). For example, the first electrode could be 104 and / or the second electrode 112 be set up in such a way that the optoelectronic component 100 incident electromagnetic wave through the first electrode 104 and / or the second electrode 112 can drive without being connected to the first electrode 104 and / or the second electrode 112 to be scattered. For example, the first electrode can 104 and / or the second electrode 112 be set up in such a way that the first electrode 104 and / or the second electrode 112 can transmit an electromagnetic wave if the optoelectronic component 100is irradiated by means of an electromagnetic wave. In one embodiment, the first electrode can 104 and / or the second electrode 112 be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first electrode can be 104 and / or the second electrode 112 be translucent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm).

[0112] The optoelectronic component 100 can be coupled (e.g. electrically connected) to a device which may be configured to generate a signal (e.g. an analog signal, a digital signal, etc.) based on the signal from the optoelectronic component 100generated electrical signal (e.g. the generated electric current, the generated voltage, etc.) when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0113] For example, the first electrode can 104 and / or the second electrode 112 be coupled (e.g. electrically connected) to a device which may be configured to generate a signal based on the signal from the optoelectronic component 100 generated electrical signal (e.g. the generated electric current, the generated voltage, etc.) when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0114] This device can be, for example, an ammeter, a voltmeter, and / or any other suitable device for generating a signal in response to the signal from the optoelectronic component. 100generated electrical signal when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0115] Alternatively or additionally, the first electrode can be 104 and / or the second electrode 112 be coupled to a load (e.g. electrically connected), and / or to any other suitable electronic element to which the optoelectronic component is connected. 100 generated electric current and / or the output of the optoelectronic component 100 generated voltage can be applied.

[0116] Fig. Figure 6 illustrates an optoelectronic component 100 in a schematic representation, according to various embodiments.

[0117] The optoelectronic component 100 can an additional photoactive element 632 exhibiting which above and / or below the photoactive element 130can be arranged. In other words, the photoactive element can 130 and the additional photoactive element 632 be arranged one above the other. The additional photoactive element 632 may have the same or similar characteristics as the photoactive element 130 exhibit.

[0118] The additional photoactive element 632 For example, a first layer can 106-2 , a second layer 108-2 and a third layer 110-2 exhibit.

[0119] A third electrical potential can, for example, be applied to the first layer 106-2 of the additional photoactive element 632 be laid out or will be laid out (e.g. the first layer) 106-2 of the additional photoactive element 632(can be coupled to a third voltage source). The third potential can, for example, differ from the first potential and / or the second potential, and can, for example, be used to measure the potential of the optoelectronic component. 100 to amplify the generated electrical signal.

[0120] The thickness of the photoactive element 130 can vary depending on the thickness of the additional photoactive element 632 For example, the thickness of the third layer may differ. 110 of the photoactive element 130 of the thickness of the third layer 110-2 of the additional photoactive element 632 differentiate.

[0121] The third layer 110 of the photoactive element 130 may have a third material which differs from the material of the third layer 110-2 of the additional photoactive element 632 differs.

[0122] The third layer 110 of the photoactive element 130 It can therefore be arranged in such a way that charge carriers of the first type and of the second type, by means of absorption of a first electromagnetic wave, exhibit a first wavelength to be detected in the third material of the third layer. 110 are generated when the optoelectronic component 100 is irradiated by means of the first electromagnetic wave. The third layer 110-2 of the additional photoactive element 632 can be arranged such that charge carriers of the first type and the second type, by means of absorption of a second electromagnetic wave, exhibit a second wavelength to be detected in the third material of the third layer 110-2 are generated when the optoelectronic component 100is irradiated by means of the second electromagnetic wave. The first wavelength to be detected can differ from the second wavelength to be detected.

[0123] In one embodiment, the thickness of the photoactive element can be 130 and the thickness of the additional photoactive element 632 be the same. For example, the thickness of the third layer can be 110 of the photoactive element 130 and the thickness of the third layer 110-2 of the additional photoactive element 632 be the same. For example, the third layer could be 110 of the photoactive element 130 and the third layer 110-2 of the additional photoactive element 632 have the same third material. In this configuration, charge carriers can therefore be located in the third layer. 110 of the photoactive element 130 and in the third shift 110-2of the additional photoactive element 632 are generated as a reaction to the same electromagnetic wave, so that a stronger electrical signal can be generated for that electromagnetic wave.

[0124] The optoelectronic component 100 For example, an intermediate layer could 634 exhibiting which between the photoactive element 130 and the additional photoactive element 632 is arranged. For example, the intermediate layer 634 in physical contact (e.g., direct physical contact) with the second layer 108 of the photoactive element 130 and with the first shift 106-2 of the additional photoactive element 632 It is understood that other suitable arrangements can also be chosen.

[0125] The intermediate layer 634It can be a charge recombination layer (also known as a charge conversion layer) or be configured as a charge recombination layer. For example, the intermediate layer can 634 be arranged in such a way that charge carriers of the first type and charge carriers of the second type are in the intermediate layer 634 can recombine with each other.

[0126] The optoelectronic component 100 may also have a third electrode, which is located between the photoactive element 130 and the additional photoactive element 632 The third electrode can be arranged in various ways. For example, the third electrode can have a third reflecting surface and a fourth reflecting surface. For example, the third reflecting surface can be located opposite the first reflecting surface. 104abe facing the second reflective surface, and the fourth reflective surface can be facing the second reflective surface. 112a be facing each other. For example, the third reflective surface and the first reflective surface can be 104a be arranged in such a way that they form a first optical cavity. For example, the fourth reflecting surface and the second reflecting surface can 112a It should be arranged in such a way that it forms a second optical cavity. The photoactive element can be visualized as follows: 130 within the first optical cavity (e.g., between the first reflecting surface) 104a and the third reflective surface) and the additional photoactive element 632 can occur within the second optical cavity (e.g., between the second reflecting surface) 112a and the fourth reflecting surface). The third electrode can, for example, replace the intermediate layer. 634be arranged.

[0127] The optical length of the first optical cavity can differ from the optical length of the second optical cavity. For example, the geometric distance between the first reflecting surface can differ. 104a and the third reflecting surface from the geometric distance between the second reflecting surface 112a and the fourth reflective surface.

[0128] For example, the third layer can 110 of the photoactive element 130 be arranged in such a way that it is located in a maximum of a first longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of a first electromagnetic wave when the optoelectronic component 100is irradiated by means of the first electromagnetic wave. For example, the first longitudinal mode can be between the first reflecting surface. 104a and the third reflective surface. For example, the third layer can be 110-2 of the additional photoactive element 632 be arranged in such a way that it is located in a maximum of a second longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of a second electromagnetic wave when the optoelectronic component 100 is irradiated by means of the second electromagnetic wave. For example, the second longitudinal mode can be used between the second reflecting surface. 112a and the fourth reflective surface.

[0129] The optoelectronic component 100It can therefore be set up to detect a variety of wavelengths, and the properties of the optical cavities and the third layers 110 , 110-2 can be selected and optimized based on the wavelengths to be detected.

[0130] It goes without saying that the optoelectronic component 100 also more than two photoactive elements 130 , 632 can exhibit.

[0131] The optoelectronic component 100 can be configured as a photodiode.

[0132] An optoelectronic component structure can contain a variety of optoelectronic components. 100 exhibit. For example, the optoelectronic components can 100 the multitude of optoelectronic components 100 They can be arranged in a matrix configuration. The optoelectronic component structure can, for example, be configured as a photodiode.

[0133] Fig. Figure 7 illustrates a flowchart of a detection system. 700 , which is an optoelectronic component 100 can have different embodiments.

[0134] The detection system 700 It can be used, for example, to convert radiation (e.g., electromagnetic radiation, such as an electromagnetic wave) into a readable signal (e.g., an analog signal, a digital signal). The detection system 700 This could be, for example, a spectrophotometer (e.g., a microspectrometer) and / or a camera (e.g., a hyperspectral camera). For example, the detection system could be... 700 Enables qualitative and quantitative determination of, for example, ingredients of foods, materials and liquids.

[0135] The detection system 700 For example, at least one optical element may be used. 702(e.g., at least one lens, such as an objective lens, etc.) which can be set up to be connected to the detection system 700 incident electromagnetic wave on at least one sensor element 704 of the detection system 700 to direct. The at least one sensor element 704 It can, for example, be configured to generate an electrical signal in response to the electromagnetic wave. This requires at least one sensor element. 704 For example, an optoelectronic component 100 according to one of the embodiments. The optoelectronic component 100 For example, part of the at least one sensor element can 704 It is understood that a large number of optoelectronic components are also involved. 100 as sensor elements 704 of the detection system 700 can be used.

[0136] The at least one sensor element 704can, for example, be equipped with at least one processor 706 of the detection system 700 They must be communicatively coupled. They must contain at least one processor. 706 For example, it can be set up that the sensor element is at least one sensor element 704 The detection system processes the generated electrical signal and provides corresponding signal information. 700 can, for example, have any suitable processor type, e.g. at least one single-core processor, at least one dual-core processor, at least one SoC (System on a Chip), at least one microcontroller, etc.

[0137] Furthermore, the detection system can 700 at least one storage device 708 exhibit, e.g., volatile memory, non-volatile memory, etc. The at least one processor 706 For example, it can be used with at least one storage device. 708 be communicatively coupled. At least one storage device. 708For example, it can be set up that uses at least one processor 706 to store the provided signal information.

[0138] The detection system 700 can at least one display 710 which may be configured to display signal information in a corresponding graphical representation. For example, the display may include at least one 710 with at least one processor 706 and / or with at least one storage device 708 be communicatively coupled and configured by the processor 706 to display provided signal information and / or the information stored in at least one memory 708 to display stored signal information.

[0139] The various components of the detection system 700They can be coupled together, for example, by means of a bus and / or by means of any suitable connection for transmitting electrical signals.

[0140] A method for manufacturing an optoelectronic component 100 may exhibit the following: the formation of a first electrode 104 on a substrate 102 , which is a first reflective surface 104a may exhibit; the formation of a second electrode 112 above the first electrode 104 , where the second electrode 112 a second reflective surface 112a can exhibit, wherein the first reflective surface 104a and the second reflective surface 112a can be arranged in such a way that they form an optical cavity; and the formation of a photoactive element 130 between the first reflective surface 104a and the second reflective surface 112a, wherein the photoactive element 130 It can be made from several (e.g., three) materials.

[0141] Forming the first electrode 104 and / or the second electrode 112 This can be done using deposition techniques (e.g., metal deposition techniques).

[0142] In one embodiment, the formation of the first electrode can 104 the formation of a first reflective surface 104a the first electrode 104 exhibiting the formation of the first reflective surface. 104a For example, it may involve the deposition of a large number of layers of dielectric materials and / or the deposition of a large number of layers of dielectric materials and / or metal.

[0143] In one embodiment, the formation of the second electrode can 112 forming a second reflective surface 112a the second electrode 112exhibiting the formation of the second reflective surface. 112a For example, it may involve the deposition of a large number of layers of dielectric materials and / or the deposition of a large number of layers of dielectric materials and / or metal.

[0144] The formation of the photoactive element 130 may exhibit the following: the formation of a first layer 106 having a first material which is located between the first reflective surface 104a and the second reflective surface 112a can be arranged; the formation of a second layer 108 having a second material which is located between the first layer 106 and the second reflective surface 112a can be arranged in such a way that the second material differs from the first material; forming a third layer 110 comprising a third material, which is located between the first layer 106and the second layer 108 can be arranged in such a way that the third material differs from the first material and from the second material.

[0145] The first material, the second material, and the third material can be arranged such that, when the optoelectronic component 100 is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type in the third layer 110 can be generated by absorption of the electromagnetic wave in the third material, which is located in the third layer 110 first-type charge carriers generated by the third layer 110 on the first shift 106 can be transferred, which are in the third layer 110 generated charge carriers of the second type from the third layer 110 on the second shift 108The transferred charge carriers of the first type can be transferred in the first layer. 106 to the first electrode 104 can be transported, and the transferred load carriers of the second type in the second layer 108 to the second electrode 112 can be transported.

[0146] The first layer 106 and / or the second layer 108 and / or the third layer 110 They can be formed by means of a deposition process (e.g., physical vapor deposition such as vacuum sublimation, chemical vapor deposition, spray deposition, etc.). The first layer 106 and / or the second layer 108 They can also be separated, for example, in the liquid phase.

[0147] The first layer 106 and / or the second layer 108 and / or the third layer 110However, they can also be formed by means of a coating process (e.g. slot die coating, centrifugal coating, dip coating, doctor blade coating, etc.).

[0148] The process can also form a first transport layer. 524 exhibit the first transport layer 524 For example, one can choose between the first reflective surface 104a and the first shift 106 be formed.

[0149] The process can also form a second transport layer. 526 exhibit the second transport layer 526 For example, one can choose between the second reflective surface 112a and the second layer 108 be formed.

[0150] The process can also be used to form an encapsulation. 528 exhibit. The encapsulation 528 can be done, for example, via the second electrode 112 are formed. The encapsulation 528For example, the second electrode can 112 at least partially cover. In one embodiment, the encapsulation can 528 for example the optoelectronic component 100 at least partially encapsulate. For example, encapsulation can 528 be designed in such a way that the various components of the optoelectronic device 100 by means of encapsulation 528 can be at least partially covered.

[0151] The method can also be used to form an additional photoactive component. 632 exhibit, wherein the photoactive component 130 and the additional photoactive component 632 They can be arranged one above the other.

[0152] The following are various examples that relate to what has been described and presented above.

[0153] Example 1 is an optoelectronic device which may comprise: a substrate; a first electrode arranged on the substrate and comprising a first reflective surface; a second electrode arranged above the first electrode and comprising a second reflective surface, wherein the second reflective surface and the first reflective surface are configured to form an optical cavity; comprising a first layer of a first material arranged between the first reflective surface and the second reflective surface; comprising a second layer of a second material arranged between the first layer and the second reflective surface, wherein the second material differs from the first material;comprising a third layer, a third material which is arranged between the first layer and the second layer, wherein the third material differs from the first material and from the second material;wherein the first material, the second material and the third material are arranged such that, when the optoelectronic device is irradiated by an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode.

[0154] For example, the first layer, the second layer and the third layer can form a photoactive element of the optoelectronic device.

[0155] In Example 2, the optoelectronic component according to Example 1 can further have the first reflecting surface and the second reflecting surface arranged parallel to each other.

[0156] In Example 3, the optoelectronic component according to Example 1 or 2 may further have the first reflecting surface and the second reflecting surface arranged opposite each other.

[0157] In Example 4, the optoelectronic device according to one of Examples 1 to 3 may further have the first reflecting surface and the second reflecting surface arranged such that one or more longitudinal modes of the electromagnetic wave are generated between the first reflecting surface and the second reflecting surface when the optoelectronic device is irradiated by the electromagnetic wave.

[0158] In Example 5, the optoelectronic device according to one of Examples 1 to 4 may further have the third layer arranged such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic device is irradiated by the electromagnetic wave.

[0159] In Example 6, the optoelectronic device according to one of Examples 1 to 5 may further have the third layer arranged such that it is located in a minimum of a longitudinal mode of the electromagnetic wave when the optoelectronic device is irradiated by the electromagnetic wave.

[0160] In Example 7, the optoelectronic component according to Example 5 or 6 may further have the longitudinal mode being a first-order longitudinal mode.

[0161] In Example 8, the optoelectronic device according to Example 5 or 6 may further have the longitudinal mode being a longitudinal mode of an order higher than the first order.

[0162] In Example 9, the optoelectronic device according to one of Examples 1 to 4 can further have the third layer arranged such that it is located in a maximum of a first longitudinal mode of the electromagnetic wave, and that it is located in a minimum of a second longitudinal mode of the electromagnetic wave when the optoelectronic device is irradiated by the electromagnetic wave, wherein the order of the first longitudinal mode differs from the order of the second longitudinal mode.

[0163] In Example 10, the optoelectronic component according to Example 9 can further have the first longitudinal mode being a first-order longitudinal mode.

[0164] In Example 11, the optoelectronic device according to Example 9 can further have the first longitudinal mode being a longitudinal mode of an order higher than the first order.

[0165] In Example 12, the optoelectronic device according to one of Examples 1 to 4 can further have the third layer configured such that it is located in a maximum of a first longitudinal mode of a first electromagnetic wave (e.g., an electromagnetic wave to be detected) when the optoelectronic device is irradiated by the first electromagnetic wave, and that it is located in a minimum of a second longitudinal mode of a second electromagnetic wave (e.g., an electromagnetic wave not to be detected) when the optoelectronic device is irradiated by the second electromagnetic wave, wherein the wavelength of the first electromagnetic wave differs from the wavelength of the second electromagnetic wave.

[0166] In Example 13, the optoelectronic component according to Example 12 can further have the order of the first longitudinal mode differing from the order of the second longitudinal mode.

[0167] In Example 14, the optoelectronic device according to one of Examples 1 to 13 may further include the third material being configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves to produce a wavelength in the ultraviolet spectral range.

[0168] In Example 15, the optoelectronic device according to one of Examples 1 to 14 may further include the third material being configured to generate a wavelength in the visible spectral range by absorbing charge carriers of the first type and charge carriers of the second type.

[0169] In Example 16, the optoelectronic device according to one of Examples 1 to 15 may further include the third material being configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves to produce a wavelength in the near-infrared spectral range.

[0170] In Example 17, the optoelectronic device according to one of Examples 1 to 16 may further include the third material being configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves to produce a wavelength in the infrared spectral range.

[0171] In Example 18, the optoelectronic device according to one of Examples 1 to 17 may further have the third material configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves with a wavelength in a spectral range of approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0172] In Example 19, the optoelectronic device according to one of Examples 1 to 18 may further have the first layer arranged such that the first layer allows a detectable electromagnetic wave to pass through when the optoelectronic device is irradiated by the detectable electromagnetic wave.

[0173] In Example 20, the optoelectronic device according to one of Examples 1 to 19 may further have the second layer arranged such that the second layer allows a detectable electromagnetic wave to pass through when the optoelectronic device is irradiated by the detectable electromagnetic wave.

[0174] In Example 21, the optoelectronic component according to one of Examples 1 to 20 may further have the third layer in physical contact (e.g., in direct physical contact) with the first layer.

[0175] In Example 22, the optoelectronic component according to one of Examples 1 to 21 may further have the third layer in physical contact (e.g., in direct physical contact) with the second layer.

[0176] In Example 23, the optoelectronic device according to one of Examples 1 to 22 may further have the first layer and the second layer forming an interface (e.g. a charge separation interface) which is configured to separate charge carrier pairs (e.g. electron-hole).

[0177] In Example 24, the optoelectronic device according to Example 23 can further have the third layer arranged at the interface between the first layer and the second layer.

[0178] In Example 25, the optoelectronic device according to Example 23 or 24 may further have the third layer at least partially covering the interface between the first layer and the second layer.

[0179] For example, the portion covered by the third layer could be 5%, 10%, 50%, 75%, etc. of the interface between the first layer and the second layer.

[0180] In Example 26, the optoelectronic device according to one of Examples 23 to 25 may further have the third layer completely covering the interface between the first layer and the second layer.

[0181] In Example 27, the optoelectronic device according to one of Examples 1 to 26 may further have the first material and the third material arranged such that charge separation of the charge carriers of the first type takes place at an interface between the first layer and the third layer when the optoelectronic device is irradiated by means of the electromagnetic wave.

[0182] In Example 28, the optoelectronic device according to one of Examples 1 to 27 may further have the first material and the third material arranged such that the charge carriers of the second type generated in the third layer are blocked at an interface between the first layer and the third layer when the optoelectronic device is irradiated by the electromagnetic wave.

[0183] In Example 29, the optoelectronic device according to one of Examples 1 to 28 may further have the second material and the third material arranged such that charge separation of the charge carriers of the second type takes place at an interface between the second layer and the third layer when the optoelectronic device is irradiated by means of the electromagnetic wave.

[0184] In Example 30, the optoelectronic device according to one of Examples 1 to 29 may further have the second material and the third material arranged such that the charge carriers of the first type generated in the third layer are blocked at an interface between the second layer and the third layer when the optoelectronic device is irradiated by the electromagnetic wave.

[0185] In Example 31, the optoelectronic device according to one of Examples 1 to 30 may further include the third material having a highest occupied molecular orbital which has a higher energy than the highest occupied molecular orbital of the first material.

[0186] In Example 32, the optoelectronic device according to one of Examples 1 to 31 may further have that the second material has a highest occupied molecular orbital which has a higher energy than the highest occupied molecular orbital of the third material.

[0187] In Example 33, the optoelectronic device according to one of Examples 1 to 32 may further include the third material having a lowest unoccupied molecular orbital which has a higher energy than the lowest unoccupied molecular orbital of the first material.

[0188] In Example 34, the optoelectronic device according to one of Examples 1 to 33 may further include the second material having a lowest unoccupied molecular orbital which has a higher energy than the lowest unoccupied molecular orbital of the third material.

[0189] In example 35, the optoelectronic component can be 100according to one of Examples 1 to 34, furthermore exhibit that the geometric distance between the first reflecting surface and the second reflecting surface is from approximately 20 nm to approximately 5000 nm.

[0190] For example, the geometric distance between the first reflecting surface and the second reflecting surface can be less than 1000 nm, less than 500 nm, less than 200 nm, less than 100 nm, less than 50 nm, etc.

[0191] In Example 36, the optoelectronic device according to one of Examples 1 to 35 may further have the third layer arranged in such a way that charge carrier transport of the charge carriers of the first type and of the second type generated in the third layer is prevented in the third layer.

[0192] In Example 37, the optoelectronic device according to one of Examples 1 to 36 may further have the third layer being thinner than 15 nm, for example thinner than 5 nm, for example thinner than 1 nm.

[0193] In Example 38, the optoelectronic component according to one of Examples 1 to 37 may further have that the third layer has a layer thickness of approximately 1×10 -5 nm to approximately 10 nm.

[0194] In Example 39, the optoelectronic component according to one of Examples 1 to 38 may further have that the third layer is at least 1×10 9 Molecules of the third material per cm 2 exhibits.

[0195] In Example 40, the optoelectronic component according to one of Examples 1 to 39 may further have that the third layer is 2.45×10 -15 moles of the third material per cm 2 exhibits

[0196] In Example 41, the optoelectronic device according to one of Examples 1 to 40 may further have that the first layer has a layer thickness of approximately 10 nm to approximately 500 nm, for example from approximately 30 nm to approximately 400 nm, for example from approximately 50 nm to approximately 200 nm.

[0197] In Example 42, the optoelectronic device according to one of Examples 1 to 41 may further have that the second layer has a layer thickness of approximately 10 nm to approximately 500 nm, for example from approximately 30 nm to approximately 400 nm, for example from approximately 50 nm to approximately 200 nm.

[0198] In Example 43, the optoelectronic device according to one of Examples 1 to 42 may further have that the minimum absorption index of the third layer is 1×10 -6 is.

[0199] In Example 44, the optoelectronic device according to one of Examples 1 to 43 may further include the third material having an absorption index of 1 or greater than 1.

[0200] In Example 45, the optoelectronic device according to one of Examples 1 to 44 may further have that the third material has a first absorption index for a wavelength to be detected and a second absorption index for a wavelength not to be detected, wherein the first absorption index is higher than the second absorption index.

[0201] In Example 46, the optoelectronic component according to one of Examples 1 to 45 may further have a first electrical potential applied to the first electrode.

[0202] In Example 47, the optoelectronic component according to one of Examples 1 to 46 may further have a second electrical potential applied to the second electrode.

[0203] For example, the first potential can differ from the second potential. This can create an electrical voltage between the first and second electrodes.

[0204] In Example 48, the optoelectronic component according to one of Examples 1 to 47 may further have that the first reflecting surface has a reflection coefficient greater than 0.95, for example greater than 0.99.

[0205] In Example 49, the optoelectronic component according to one of Examples 1 to 48 may further have that the second reflecting surface has a reflection coefficient greater than 0.95, for example greater than 0.99.

[0206] In Example 50, the optoelectronic device according to one of Examples 1 to 49 may further have the third material having a higher absorption coefficient than the first material.

[0207] In Example 51, the optoelectronic device according to one of Examples 1 to 50 may further have that the third material has a higher absorption coefficient than the second material.

[0208] In Example 52, the optoelectronic component according to one of Examples 1 to 51 may further have the first material being or having an organic material (e.g. a polymer).

[0209] In Example 53, the optoelectronic component according to one of Examples 1 to 52 may further include the fact that the first material is or has a compound (e.g. an organic compound, such as a polymeric compound).

[0210] In Example 54, the optoelectronic component according to one of Examples 1 to 53 may further include the fact that the first material is or has a naphthalenetetracarboxylic acid diimide derivative.

[0211] In Example 55, the optoelectronic device according to any of Examples 1 to 54 may further include the first material being or comprising at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BPhen:Cs; BCP:Yb; Alq3; NTCDA; Me-NTCDI; HATNA-Cl6.

[0212] In Example 56, the optoelectronic component according to one of Examples 1 to 55 may further have the first material being or having an inorganic material.

[0213] In Example 57, the optoelectronic component according to one of Examples 1 to 56 may further include the fact that the first material is or comprises a compound of at least one organic material and at least one inorganic material.

[0214] In Example 58, the optoelectronic component according to one of Examples 1 to 57 may further include the fact that the second material is or has an organic material (e.g. a polymer).

[0215] In Example 59, the optoelectronic component according to one of Examples 1 to 58 may further include the fact that the second material is or has a compound (e.g. an organic compound, such as a polymeric compound).

[0216] In Example 60, the optoelectronic component according to one of Examples 1 to 59 may further have the second material being or having an amine.

[0217] In Example 61, the optoelectronic component according to one of Examples 1 to 60 may further have the second material being or having a carboxylic acid derivative.

[0218] In Example 62, the optoelectronic device according to any one of Examples 1 to 61 may further include that the second material is at least one material from the following list of materials or a combination of two or more materials from the following list of materials: BF-DPB; a-NPB; BPAPF; 1-TNATA; 2-TNATA; 4P-TPD; Di-NPD; m-MTDATA; MeO-TPD; PV-TPD; Spiro-MeO-TPD; Spiro-TAD; Spiro-TTB; TAPC.

[0219] In Example 63, the optoelectronic component according to one of Examples 1 to 62 may further have the second material being or having an inorganic material.

[0220] In Example 64, the optoelectronic component according to one of Examples 1 to 63 may further include the fact that the second material is or comprises a compound of at least one organic material and at least one inorganic material.

[0221] In Example 65, the optoelectronic component according to one of Examples 1 to 64 may further include the fact that the third material is or has an organic material (e.g. a polymer).

[0222] In Example 66, the optoelectronic component according to one of Examples 1 to 65 may further include the fact that the third material is or has a compound (e.g. an organic compound, such as a polymeric compound).

[0223] In Example 67, the optoelectronic component according to one of Examples 1 to 66 may further include the fact that the third material is or comprises a compound of at least one organic material and at least one inorganic material.

[0224] In Example 68, the optoelectronic device according to any one of Examples 1 to 67 may further include the third material being or comprising at least one of the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; C16SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0225] In Example 69, the optoelectronic device according to any one of Examples 1 to 68 may further include the third material being a compound of two or more materials from the following list: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; C16SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0226] In Example 70, the optoelectronic device according to any one of Examples 1 to 69 may further include the following combinations of materials that can be used to form the first layer, the second layer, and the third layer (the combinations describe possible materials for the first layer / the third layer / the second layer): HATNA-C16 / DCV2-5T / BF-DPB; HATNA-Cl6 / ZnPC / BF-DPB; HATNA-Cl6 / C60 / a-NPB; HATNA-Cl6 / C60 / BPAPF; NTCDA / DCV2-5T / BF-DPB; NTCDA / ZnPC / BF-DPB; NTCDA / C60 / a-NPB; NTCDA / C60 / BPAPF.

[0227] In Example 71, the optoelectronic component according to one of Examples 1 to 70 may further include the fact that the third material is or has an inorganic material (e.g. an inorganic semiconductor material).

[0228] In Example 72, the optoelectronic component according to one of Examples 1 to 71 may further have the third layer being a non-closed layer or arranged as a non-closed layer.

[0229] In Example 73, the optoelectronic component according to one of Examples 1 to 72 may further have the third layer consisting of a plurality of isolated parts (e.g. islands).

[0230] In Example 74, the optoelectronic device according to one of Examples 1 to 73 may further have the third layer consisting of a one-dimensional structure (e.g. a nanoparticle such as a metal nanoparticle, a nanotube, a nanofiber, a nanorod, etc.).

[0231] In Example 75, the optoelectronic device according to one of Examples 1 to 74 may further have the third layer consisting of a multitude of one-dimensional structures (e.g., a multitude of nanoparticles such as metal nanoparticles, a multitude of nanotubes, a multitude of nanofibers, a multitude of nanorods, etc.).

[0232] In Example 76, the optoelectronic device according to one of Examples 1 to 75 may further have the third layer formed from at least one quantum dot structure.

[0233] In Example 77, the optoelectronic device according to one of Examples 1 to 76 may further have the third layer consisting of a two-dimensional structure (e.g. a monolayer, such as a graphene monolayer).

[0234] In Example 78, the optoelectronic device according to one of Examples 1 to 77 may further have the third layer consisting of a plurality of two-dimensional structures (e.g., a plurality of monolayers, such as a plurality of graphene monolayers).

[0235] In Example 79, the optoelectronic device according to one of Examples 1 to 78 can further include at least one additional element (e.g., a nanoparticle) which may comprise a fourth material (e.g., a metal) arranged in the third layer. For example, several additional elements (e.g., a multitude of nanoparticles, etc.) which may comprise the fourth material can be arranged in the third layer.

[0236] In Example 80, the optoelectronic component according to one of Examples 1 to 79 may further have a substrate that is a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the substrate may be a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.).

[0237] In Example 81, the optoelectronic component according to one of Examples 1 to 79 may further have a substrate that is an electrically conductive material (e.g. a metal oxide, a metal such as aluminum, copper, gold, etc.).

[0238] In Example 82, the optoelectronic device according to one of Examples 1 to 79 may further have a substrate made of a semiconductor material (e.g. silicon).

[0239] In Example 83, the optoelectronic device according to one of Examples 1 to 82 may further have a substrate configured such that it allows the electromagnetic wave to pass through when the optoelectronic device is irradiated by the electromagnetic wave.

[0240] In Example 84, the optoelectronic device according to any one of Examples 1 to 83 can further have a substrate configured such that electromagnetic waves are blocked by the substrate when the optoelectronic device is irradiated by the substrate. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the substrate.

[0241] In Example 85, the optoelectronic device according to one of Examples 1 to 84 can further comprise a first filter layer arranged over a first side of the substrate and configured such that electromagnetic waves are blocked by the first filter layer when the optoelectronic device is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the first filter layer.

[0242] In Example 86, the optoelectronic device according to one of Examples 1 to 84 can further comprise a second filter layer arranged over a second side of the substrate and configured such that electromagnetic waves are blocked by the second filter layer when the optoelectronic device is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the second filter layer.

[0243] In Example 87, the optoelectronic component according to one of Examples 1 to 86 may further have an encapsulation which is arranged over the second electrode and at least partially encapsulates the optoelectronic component.

[0244] In Example 88, the optoelectronic device according to Example 87 can further have the encapsulation arranged in such a way that it allows the electromagnetic wave to pass through when the optoelectronic device is irradiated by the electromagnetic wave.

[0245] In Example 89, the optoelectronic device according to Example 87 or 88 can further have the encapsulation configured such that electromagnetic waves are blocked by the encapsulation when the optoelectronic device is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the encapsulation.

[0246] In Example 90, the optoelectronic device according to one of Examples 87 to 89 can further comprise a third filter layer arranged over a first side of the encapsulation and configured such that electromagnetic waves are blocked by the third filter layer when the optoelectronic device is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the third filter layer.

[0247] In Example 91, the optoelectronic device according to one of Examples 87 to 90 can further comprise a fourth filter layer arranged over a second side of the encapsulation and configured such that electromagnetic waves are blocked by the fourth filter layer when the optoelectronic device is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the fourth filter layer.

[0248] In Example 92, the optoelectronic device according to one of Examples 1 to 91 can further comprise a first transport layer which is arranged between the first reflecting surface and the first layer and is configured such that, when the optoelectronic device is irradiated by means of the electromagnetic wave, the charge carriers of the first type transported in the first layer are transferred from the first layer to the first transport layer, and the charge carriers of the first type transferred in the first transport layer are transported in the first transport layer to the first electrode.

[0249] In Example 93, the optoelectronic device according to one of Examples 1 to 92 can further comprise a second transport layer, which is arranged between the second reflecting surface and the second layer and is configured such that, when the optoelectronic device is irradiated by means of the electromagnetic wave, the charge carriers of the second type transported in the second layer are transferred from the second layer to the second transport layer, and the charge carriers of the second type transferred in the second transport layer are transported in the second transport layer to the second electrode.

[0250] In Example 94, the optoelectronic component according to one of Examples 1 to 93 may further include an additional photoactive element. For example, the additional photoactive element and the photoactive element may be arranged one above the other.

[0251] In Example 95, the optoelectronic device according to Example 94 can further have the thickness of the photoactive element differ from the thickness of the additional photoactive element.

[0252] In Example 96, the optoelectronic device according to Example 94 or 95 may further have the thickness of the third layer of the photoactive element differing from the thickness of a third layer of the additional photoactive element.

[0253] In Example 97, the optoelectronic device according to Example 94 can further have the thickness of the photoactive element and the thickness of the additional photoactive element being equal.

[0254] In Example 98, the optoelectronic device according to Example 94 or 97 may further have the thickness of the third layer of the photoactive element and the thickness of a third layer of the additional photoactive element being equal.

[0255] In Example 99, the optoelectronic device according to one of Examples 94 to 98 may further include an intermediate layer (e.g. a charge recombination layer) which is arranged between the photoactive element and the additional photoactive element and is configured such that charge carriers of the first type and charge carriers of the second type can recombine with each other in the intermediate layer.

[0256] In Example 100, the optoelectronic component according to Example 99 can further have a third electrical potential applied to the intermediate layer.

[0257] For example, the third potential may differ from the first potential and / or the second potential.

[0258] In Example 101, the optoelectronic device according to Example 99 or 100 may further have the intermediate layer in physical contact (e.g., in direct physical contact) with the second layer of the photoactive element and with the first layer of the additional photoactive element.

[0259] In Example 102, the optoelectronic device according to one of Examples 94 to 101 may further include a third electrode which is arranged between the photoactive element and the additional photoactive element and which has a third reflective surface and a fourth reflective surface.

[0260] In Example 103, the optoelectronic device according to Example 102 can further include the third reflecting surface and the first reflecting surface being arranged such that they form a first optical cavity.

[0261] In Example 104, the optoelectronic device according to Example 102 or 103 may further have the fourth reflecting surface and the second reflecting surface arranged such that they form a second optical cavity.

[0262] In Example 105, the optoelectronic device according to Example 104 can further have the optical length of the first optical cavity differ from the optical length of the second optical cavity.

[0263] In Example 106, the optoelectronic device according to one of Examples 102 to 105 may further have the photoactive element arranged between the first reflecting surface and the third reflecting surface.

[0264] In Example 107, the optoelectronic device according to one of Examples 102 to 106 may further have the additional photoactive element arranged between the second reflecting surface and the fourth reflecting surface.

[0265] In Example 108, the optoelectronic device according to one of Examples 94 to 107 may further have the third layer of the photoactive element arranged such that it is located in a maximum of a first longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of a first electromagnetic wave when the optoelectronic device is irradiated by the first electromagnetic wave.

[0266] In Example 109, the optoelectronic device according to one of Examples 94 to 108 may further have the third layer of the additional photoactive element arranged such that it is located in a maximum of a second longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of a second electromagnetic wave when the optoelectronic device is irradiated by the second electromagnetic wave.

[0267] In Example 110, the optoelectronic component can be configured as a photodiode according to one of Examples 1 to 109.

[0268] Example 111 is an optoelectronic component structure comprising a plurality of optoelectronic components according to any one of Examples 1 to 109.

[0269] Example 112 is a method for fabricating an optoelectronic device, wherein the method may: form a first electrode on a substrate having a first reflective surface; form a second electrode above the first electrode, wherein the second electrode has a second reflective surface, the second reflective surface and the first reflective surface being arranged to form an optical cavity; form a first layer having a first material arranged between the first reflective surface and the second reflective surface; form a second layer having a second material arranged between the first layer and the second reflective surface, wherein the second material is different from the first material;Forming a third layer comprising a third material which is arranged between the first layer and the second layer, wherein the third material differs from the first material and from the second material;wherein the first material, the second material and the third material are arranged such that, when the optoelectronic device is irradiated by an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode.

[0270] For example, the first layer, the second layer and the third layer can form a photoactive element of the optoelectronic device.

[0271] In Example 113, the method according to Example 112 can further feature that the first reflecting surface and the second reflecting surface are arranged parallel to each other.

[0272] In Example 114, the method according to Example 112 or 113 may further include the first reflecting surface and the second reflecting surface being arranged opposite each other.

[0273] In Example 115, the method according to one of Examples 112 to 114 may further include the first reflecting surface and the second reflecting surface being arranged such that one or more longitudinal modes of the electromagnetic wave are generated between the first reflecting surface and the second reflecting surface when the optoelectronic device is irradiated by the electromagnetic wave.

[0274] In Example 116, the method according to one of Examples 112 to 115 may further include the third layer being arranged such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic device is irradiated by the electromagnetic wave.

[0275] In Example 117, the method according to one of Examples 112 to 116 may further include the third layer being arranged such that it is located in a minimum of a longitudinal mode of the electromagnetic wave when the optoelectronic device is irradiated by the electromagnetic wave.

[0276] In Example 118, the method according to Example 116 or 117 may further exhibit that the longitudinal mode is a first-order longitudinal mode.

[0277] In Example 119, the method according to Example 116 or 117 may further feature that the longitudinal mode is a longitudinal mode of an order higher than the first order.

[0278] In Example 120, the method according to one of Examples 112 to 115 may further include the third layer being arranged such that it is located in a maximum of a first longitudinal mode of the electromagnetic wave and that it is located in a minimum of a second longitudinal mode of the electromagnetic wave when the optoelectronic device is irradiated by the electromagnetic wave, wherein the order of the first longitudinal mode differs from the order of the second longitudinal mode.

[0279] In Example 121, the method according to Example 120 can further exhibit that the first longitudinal mode is a first-order longitudinal mode.

[0280] In Example 122, the method according to Example 120 can further feature that the first longitudinal mode is a longitudinal mode of an order higher than the first order.

[0281] In Example 123, the method according to one of Examples 112 to 115 may further include the third layer being arranged such that it is located in a maximum of a first longitudinal mode of a first electromagnetic wave (e.g., an electromagnetic wave to be detected) when the optoelectronic device is irradiated by the first electromagnetic wave, and that it is located in a minimum of a second longitudinal mode of a second electromagnetic wave (e.g., an electromagnetic wave not to be detected) when the optoelectronic device is irradiated by the second electromagnetic wave, wherein the wavelength of the first electromagnetic wave differs from the wavelength of the second electromagnetic wave.

[0282] In Example 124, the procedure according to Example 123 can further exhibit that the order of the first longitudinal mode differs from the order of the second longitudinal mode.

[0283] In Example 125, the method according to one of Examples 112 to 124 may further include the third material being configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves to produce a wavelength in the ultraviolet spectral range.

[0284] In Example 126, the method according to one of Examples 112 to 125 may further include the third material being arranged to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves to produce a wavelength in the visible spectral range.

[0285] In Example 127, the method according to one of Examples 112 to 126 may further include the third material being configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves with a wavelength in the near-infrared spectral range.

[0286] In Example 128, the method according to one of Examples 112 to 127 may further include the third material being arranged to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves with a wavelength in the infrared spectral range.

[0287] In Example 129, the method according to one of Examples 112 to 128 may further include the third material being configured to generate charge carriers of the first type and charge carriers of the second type by absorption of electromagnetic waves having a wavelength in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0288] In Example 130, the method according to one of Examples 112 to 129 may further include the first layer being arranged such that the first layer allows a detectable electromagnetic wave to pass through when the optoelectronic device is irradiated by means of the detectable electromagnetic wave.

[0289] In Example 131, the method according to one of Examples 112 to 130 may further include the second layer being arranged such that the second layer allows a detectable electromagnetic wave to pass through when the optoelectronic device is irradiated by the detectable electromagnetic wave.

[0290] In Example 132, the method according to one of Examples 112 to 131 may further include the third layer being in physical contact (e.g., in direct physical contact) with the first layer.

[0291] In Example 133, the method according to one of Examples 112 to 132 may further include the third layer being in physical contact (e.g., in direct physical contact) with the second layer.

[0292] In Example 134, the method according to one of Examples 112 to 133 may further include the first layer and the second layer forming an interface (e.g. a charge separation interface) which is configured to separate charge carrier pairs (e.g. electron-hole).

[0293] In Example 135, the method according to Example 134 can further include the third layer being arranged at the interface between the first layer and the second layer.

[0294] In Example 136, the method according to Example 134 or 135 may further include the third layer covering at least part of the interface between the first layer and the second layer.

[0295] For example, the portion covered by the third layer could be 5%, 10%, 50%, 75%, etc. of the interface between the first layer and the second layer.

[0296] In Example 137, the method according to one of Examples 134 to 136 may further include the third layer completely covering the interface between the first layer and the second layer.

[0297] In Example 138, the method according to one of Examples 112 to 137 may further include the first material and the third material being arranged such that charge separation of the charge carriers of the first type takes place at an interface between the first layer and the third layer when the optoelectronic device is irradiated by means of the electromagnetic wave.

[0298] In Example 139, the method according to one of Examples 112 to 138 may further include the first material and the third material being arranged such that the charge carriers of the second type generated in the third layer are blocked at an interface between the first layer and the third layer when the optoelectronic device is irradiated by the electromagnetic wave.

[0299] In Example 140, the method according to one of Examples 112 to 139 may further include the second material and the third material being arranged such that charge separation of the charge carriers of the second type takes place at an interface between the second layer and the third layer when the optoelectronic device is irradiated by means of the electromagnetic wave.

[0300] In Example 141, the method according to one of Examples 112 to 140 may further include the second material and the third material being arranged such that the charge carriers of the first type generated in the third layer are blocked at an interface between the second layer and the third layer when the optoelectronic device is irradiated by the electromagnetic wave.

[0301] In Example 142, the method according to one of Examples 112 to 141 may further include the third material having a highest occupied molecular orbital which has a higher energy than the highest occupied molecular orbital of the first material.

[0302] In Example 143, the method according to any one of Examples 112 to 142 may further include the second material having a highest occupied molecular orbital which has a higher energy than the highest occupied molecular orbital of the third material.

[0303] In Example 144, the method according to one of Examples 112 to 143 may further include the third material having a lowest unoccupied molecular orbital which has a higher energy than the lowest unoccupied molecular orbital of the first material.

[0304] In Example 145, the method according to one of Examples 112 to 144 may further include the second material having a lowest unoccupied molecular orbital which has a higher energy than the lowest unoccupied molecular orbital of the third material.

[0305] In Example 146, the procedure can be described 100 According to one of Examples 112 to 145, the geometric distance between the first reflecting surface and the second reflecting surface is from approximately 20 nm to approximately 5000 nm.

[0306] For example, the geometric distance between the first reflecting surface and the second reflecting surface can be less than 1000 nm, less than 500 nm, less than 200 nm, less than 100 nm, less than 50 nm, etc.

[0307] In Example 147, the method according to one of Examples 112 to 146 may further include the third layer being arranged in such a way as to prevent the transport of the first-type and second-type load carriers produced in the third layer.

[0308] In Example 148, the method according to one of Examples 112 to 147 may further include the third layer being thinner than 15 nm, for example thinner than 5 nm, for example thinner than 1 nm.

[0309] In Example 149, the method according to one of Examples 112 to 148 may further include the third layer having a layer thickness of approximately 1×10 -5nm to approximately 10 nm.

[0310] In Example 150, the method according to one of Examples 112 to 149 may further include the third layer having a thickness of at least 1×10 9 Molecules of the third material per cm 2 exhibits.

[0311] In Example 151, the method according to one of Examples 112 to 150 may further include that the third layer is 2.45×10 -15 moles of the third material per cm 2 In Example 152, the method according to one of Examples 112 to 151 may further feature that the first layer has a layer thickness of approximately 10 nm to approximately 500 nm, for example from approximately 30 nm to approximately 400 nm, for example from approximately 50 nm to approximately 200 nm.

[0312] In Example 153, the method according to one of Examples 112 to 152 may further include the second layer having a layer thickness of approximately 10 nm to approximately 500 nm, for example from approximately 30 nm to approximately 400 nm, for example from approximately 50 nm to approximately 200 nm.

[0313] In Example 154, the method according to one of Examples 112 to 153 may further feature that the minimum absorption index of the third layer is 1×10 -6 is.

[0314] In Example 155, the method according to one of Examples 112 to 154 may further include the third material having an absorption index of 1 or greater than 1.

[0315] In Example 156, the method according to any one of Examples 112 to 155 may further include the third material having a first absorption index for a wavelength to be detected and a second absorption index for a wavelength not to be detected, wherein the first absorption index is higher than the second absorption index.

[0316] In Example 157, the method according to one of Examples 112 to 156 may further include the application of a first electrical potential to the first electrode.

[0317] In Example 158, the method according to one of Examples 112 to 157 may further include the application of a second electrical potential to the second electrode.

[0318] For example, the first potential can differ from the second potential. This can create an electrical voltage between the first and second electrodes.

[0319] In Example 159, the method according to one of Examples 112 to 158 may further include the first reflecting surface having a reflection coefficient greater than 0.95, for example greater than 0.99.

[0320] In Example 160, the method according to one of Examples 112 to 159 may further include the second reflecting surface having a reflection coefficient greater than 0.95, for example greater than 0.99.

[0321] In Example 161, the method according to one of Examples 112 to 160 may further include the third material having a higher absorption coefficient than the first material.

[0322] In Example 162, the method according to one of Examples 112 to 161 may further feature that the third material has a higher absorption coefficient than the second material.

[0323] In Example 163, the process according to one of Examples 112 to 162 may further include the fact that the first material is or comprises an organic material (e.g. a polymer).

[0324] In Example 164, the process according to one of Examples 112 to 163 may further include the fact that the first material is or has a compound (e.g. an organic compound, such as a polymeric compound).

[0325] In Example 165, the process according to one of Examples 112 to 164 may further include the first material being or having a naphthalenetetracarboxylic acid diimide derivative.

[0326] In Example 166, the process according to any of Examples 112 to 164 may further include the first material being or comprising at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BPhen:Cs; BCP:Yb; Alq3; NTCDA; Me-NTCDI; HATNA-Cl6.

[0327] In Example 167, the process according to one of Examples 112 to 166 may further include the fact that the first material is or is an inorganic material.

[0328] In Example 168, the process according to one of Examples 112 to 167 may further include the fact that the first material is or comprises a compound of at least one organic material and at least one inorganic material.

[0329] In Example 169, the process according to one of Examples 112 to 168 may further include the fact that the second material is or comprises an organic material (e.g. a polymer).

[0330] In Example 170, the process according to one of Examples 112 to 169 may further include the fact that the second material is or has a compound (e.g. an organic compound, such as a polymeric compound).

[0331] In Example 171, the process according to one of Examples 112 to 170 may further include the fact that the second material is or comprises an amine.

[0332] In Example 172, the process according to one of Examples 112 to 171 may further include the fact that the second material is or has a carboxylic acid derivative.

[0333] In Example 173, the process according to any of Examples 112 to 172 may further include the second material being or comprising at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BF-DPB; a-NPB; BPAPF; 1-TNATA; 2-TNATA; 4P-TPD; Di-NPD; m-MTDATA; MeO-TPD; PV-TPD; Spiro-MeO-TPD; Spiro-TAD; Spiro-TTB; TAPC.

[0334] In Example 174, the process according to one of Examples 112 to 173 may further include the fact that the second material is or is an inorganic material.

[0335] In Example 175, the process according to one of Examples 112 to 174 may further include the fact that the second material is or comprises a compound of at least one organic material and at least one inorganic material.

[0336] In Example 176, the process according to one of Examples 112 to 175 may further include the fact that the third material is or comprises an organic material (e.g. a polymer).

[0337] In Example 177, the process according to one of Examples 112 to 176 may further include the fact that the third material is or has a compound (e.g. an organic compound, such as a polymeric compound).

[0338] In Example 178, the process according to one of Examples 112 to 177 may further include the fact that the third material is or comprises a compound of at least one organic material and at least one inorganic material.

[0339] In Example 179, the process according to any one of Examples 112 to 178 may further include the third material being or comprising at least one of the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; C16SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0340] In Example 180, the process according to any one of Examples 112 to 179 may further include the third material being or comprising a compound of two or more materials from the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; C16SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0341] In Example 181, the process according to any of Examples 112 to 180 may further include the use of the following combinations of materials for forming the first layer, the second layer, and the third layer (the combinations describe possible materials for the first layer / the third layer / the second layer): HATNA-Cl6 / DCV2-5T / BF-DPB; HATNA-Cl6 / ZnPC / BF-DPB; HATNA-C16 / C60 / a-NPB; HATNA-Cl6 / C60 / BPAPF; NTCDA / DCV2-5T / BF-DPB; NTCDA / ZnPC / BF-DPB; NTCDA / C60 / a-NPB; NTCDA / C60 / BPAPF.

[0342] In Example 182, the method according to one of Examples 112 to 181 may further include the fact that the third material is or has an inorganic material (e.g. an inorganic semiconductor material).

[0343] In Example 183, the method according to one of Examples 112 to 182 may further include the third layer being a non-closed layer or arranged as a non-closed layer.

[0344] In Example 184, the method according to one of Examples 112 to 183 may further feature that the third layer consists of a multitude of isolated parts (e.g., islands).

[0345] In Example 185, the method according to one of Examples 112 to 184 may further include the third layer consisting of a one-dimensional structure (e.g. a nanoparticle such as a metal nanoparticle, a nanotube, a nanofiber, a nanorod, etc.).

[0346] In Example 186, the method according to one of Examples 112 to 185 may further feature that the third layer consists of a multitude of one-dimensional structures (e.g., a multitude of nanoparticles such as metal nanoparticles, a multitude of nanotubes, a multitude of nanofibers, a multitude of nanorods, etc.).

[0347] In Example 187, the method according to one of Examples 112 to 186 can further feature that the third layer is formed from at least one quantum dot structure.

[0348] In Example 188, the method according to one of Examples 112 to 187 may further feature that the third layer consists of a two-dimensional structure (e.g. a monolayer, such as a graphene monolayer).

[0349] In Example 189, the method according to one of Examples 112 to 188 can further feature that the third layer consists of a multitude of two-dimensional structures (e.g., a multitude of monolayers, such as a multitude of graphene monolayers).

[0350] In Example 190, the method according to one of Examples 112 to 189 may further include at least one additional element (e.g., a nanoparticle) which may comprise a fourth material (e.g., a metal) arranged in the third layer. For example, several additional elements (e.g., a multitude of nanoparticles, etc.) which may comprise the fourth material may be arranged in the third layer.

[0351] In Example 191, the method according to one of Examples 112 to 190 may further include the substrate being a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the substrate may be a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.).

[0352] In Example 192, the method according to one of Examples 112 to 191 may further include the substrate having an electrically conductive material (e.g. a metal oxide, a metal such as aluminium, copper, gold, etc.).

[0353] In Example 193, the method according to one of Examples 112 to 192 may further include the substrate having a semiconductor material (e.g. silicon).

[0354] In Example 194, the method according to one of Examples 112 to 193 may further include the substrate being arranged such that it allows the electromagnetic wave to pass through when the optoelectronic device is irradiated by means of the electromagnetic wave.

[0355] In Example 195, the method according to one of Examples 112 to 194 can further include the substrate being configured such that electromagnetic waves are blocked by the substrate when the optoelectronic device is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the substrate.

[0356] In Example 196, the method according to one of Examples 112 to 195 can further comprise the formation of a first filter layer arranged over a first side of the substrate and configured such that electromagnetic waves are blocked by the first filter layer when the optoelectronic device is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the first filter layer.

[0357] In Example 197, the method according to one of Examples 112 to 196 can further include forming a second filter layer arranged over a second side of the substrate and configured to block electromagnetic waves by means of the second filter layer when the optoelectronic device is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by means of the second filter layer.

[0358] In Example 198, the method according to one of Examples 112 to 197 may further include the formation of an encapsulation which is arranged over the second electrode and at least partially encapsulates the optoelectronic device.

[0359] In Example 199, the method according to Example 198 can further include the encapsulation being arranged such that it allows the electromagnetic wave to pass through when the optoelectronic device is irradiated by the electromagnetic wave.

[0360] In Example 200, the method according to Example 198 or 199 can further include the encapsulation being configured to block electromagnetic waves when the optoelectronic device is irradiated through the encapsulation. For example, electromagnetic waves with a wavelength that cannot be detected can be blocked by the encapsulation.

[0361] In Example 201, the method according to one of Examples 198 to 200 can further include the formation of a third filter layer, which is arranged over a first side of the encapsulation and is configured such that electromagnetic waves are blocked by the third filter layer when the optoelectronic device is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the third filter layer.

[0362] In Example 202, the method according to one of Examples 198 to 201 can further include the formation of a fourth filter layer, which is arranged over a second side of the encapsulation and is configured such that electromagnetic waves are blocked by the fourth filter layer when the optoelectronic device is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected can be blocked by the fourth filter layer.

[0363] In Example 203, the method according to one of Examples 112 to 202 may further include the formation of a first transport layer, which is arranged between the first reflecting surface and the first layer and is configured such that, when the optoelectronic device is irradiated by means of the electromagnetic wave, the charge carriers of the first type transported in the first layer are transferred from the first layer to the first transport layer, and the charge carriers of the first type transferred in the first transport layer are transported in the first transport layer to the first electrode.

[0364] In Example 204, the method according to one of Examples 112 to 203 may further include the formation of a second transport layer, which is arranged between the second reflecting surface and the second layer and is configured such that, when the optoelectronic device is irradiated by means of the electromagnetic wave, the charge carriers of the second type transported in the second layer are transferred from the second layer to the second transport layer, and the charge carriers of the second type transferred in the second transport layer are transported in the second transport layer to the second electrode.

[0365] In Example 205, the method according to one of Examples 112 to 204 may further include the formation of an additional photoactive element.

[0366] For example, the additional photoactive element and the photoactive element can be arranged one above the other.

[0367] In Example 206, the method according to Example 205 can further feature that the thickness of the photoactive element differs from the thickness of the additional photoactive element.

[0368] In Example 207, the method according to Example 205 or 206 may further feature that the thickness of the third layer of the photoactive element differs from the thickness of a third layer of the additional photoactive element.

[0369] In Example 208, the method according to Example 205 can further feature that the thickness of the photoactive element and the thickness of the additional photoactive element are equal.

[0370] In Example 209, the method according to Example 205 or 208 may further include the thickness of the third layer of the photoactive element and the thickness of a third layer of the additional photoactive element being equal.

[0371] In Example 210, the method according to one of Examples 205 to 209 may further include the formation of an intermediate layer (e.g. a charge recombination layer) which is arranged between the photoactive element and the additional photoactive element and is configured such that charge carriers of the first type and charge carriers of the second type can recombine with each other in the intermediate layer.

[0372] In Example 211, the method according to Example 210 can further include the application of a third electrical potential to the intermediate layer.

[0373] For example, the third potential may differ from the first potential and / or the second potential.

[0374] In Example 212, the method according to Example 210 or 211 may further include the intermediate layer being in physical contact (e.g., in direct physical contact) with the second layer of the photoactive element and with the first layer of the additional photoactive element.

[0375] In Example 213, the method according to one of Examples 205 to 212 may further include the formation of a third electrode which is arranged between the photoactive element and the additional photoactive element and which has a third reflective surface and a fourth reflective surface.

[0376] In Example 214, the method according to Example 213 can further include the third reflecting surface and the first reflecting surface being arranged such that they form a first optical cavity.

[0377] In Example 215, the method according to Example 213 or 214 may further include the fourth reflecting surface and the second reflecting surface being arranged such that they form a second optical cavity.

[0378] In Example 216, the method according to Example 215 can further feature that the optical length of the first optical cavity differs from the optical length of the second optical cavity.

[0379] In Example 217, the method according to one of Examples 213 to 216 may further include the photoactive element being arranged between the first reflecting surface and the third reflecting surface.

[0380] In Example 218, the method according to one of Examples 213 to 217 may further include the additional photoactive element being arranged between the second reflecting surface and the fourth reflecting surface.

[0381] In Example 219, the method according to one of Examples 205 to 218 may further include the third layer of the photoactive element being arranged such that it is located in a maximum of a first longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of a first electromagnetic wave when the optoelectronic device is irradiated by the first electromagnetic wave.

[0382] In Example 220, the method according to one of Examples 205 to 219 may further include the third layer of the additional photoactive element being arranged such that it is located in a maximum of a second longitudinal mode (e.g. a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of a second electromagnetic wave when the optoelectronic device is irradiated by the second electromagnetic wave.

[0383] Further advantageous embodiments of the methods result from the examples of the optoelectronic component and vice versa.

Claims

[1] comprising an optoelectronic component (100): a substrate (102); a first electrode (104) which is arranged on the substrate (102) and has a first reflective surface (104a); a second electrode (112) which is arranged above the first electrode (104) and has a second reflecting surface (112a), wherein the second reflecting surface (112a) and the first reflecting surface (104a) are arranged such that they form an optical cavity; comprising a first layer (106) comprising a first material which is arranged between the first reflective surface (104a) and the second reflective surface (112a); comprising a second layer (108) comprising a second material which is arranged between the first layer (106) and the second reflective surface (112a), wherein the second material differs from the first material; comprising a third layer (110) and a third material arranged between the first layer (106) and the second layer (108), wherein the third material differs from the first material and the second material; wherein the first material, the second material and the third material are arranged such that when the optoelectronic device (100) is irradiated by means of an electromagnetic wave, • Charge carriers of a first type and charge carriers of a second type are generated in the third layer (110) by absorption of the electromagnetic wave in the third material, • the charge carriers of the first type generated in the third layer (110) are transferred from the third layer (110) to the first layer (106), • the charge carriers of the second type generated in the third layer (110) are transferred from the third layer (110) to the second layer (108), • the transferred charge carriers of the first type in the first layer (106) are transported to the first electrode (104), and • the transferred charge carriers of the second type in the second layer (108) are transported to the second electrode (112). [2] Optoelectronic component (100) according to claim 1, wherein the third layer (110) is in physical contact with the first layer (106) and with the second layer (108). [3] Optoelectronic component (100) according to claim 1 or 2, wherein the third material has a highest occupied molecular orbital (220-1) which has a higher energy than the highest occupied molecular orbital (216-1) of the first material, wherein the second material has a highest occupied molecular orbital (218-1) which has a higher energy than the highest occupied molecular orbital (220-1) of the third material, wherein the third material has a lowest unoccupied molecular orbital (220-2) which has a higher energy than the lowest unoccupied molecular orbital (216-2) of the first material, and wherein the second material has a lowest unoccupied molecular orbital (218-2) which has a higher energy than the lowest unoccupied molecular orbital (220-2) of the third material. [4] Optoelectronic component (100) according to any one of claims 1 to 3, where the third layer (110) has a layer thickness of approximately 1×10 -5 nm to approximately 10 nm. [5] Optoelectronic component (100) according to one of claims 1 to 4, wherein the third layer (110) consists of a plurality of isolated parts. [6] Optoelectronic device (100) according to any one of claims 1 to 5, wherein the third material has a first absorption index for a wavelength to be detected and a second absorption index for a wavelength not to be detected, wherein the first absorption index is higher than the second absorption index. [7] Optoelectronic device (100) according to any one of claims 1 to 6, wherein the third layer (110) is arranged such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic device (100) is irradiated by the electromagnetic wave. [8] Optoelectronic device (100) according to any one of claims 1 to 7, wherein the third layer (110) is arranged such that it is located in a maximum of a first longitudinal mode of a first electromagnetic wave to be detected when the optoelectronic device (100) is irradiated by the first electromagnetic wave, and it is located in a minimum of a second longitudinal mode of a second non-detectable electromagnetic wave when the optoelectronic device (100) is irradiated by the second electromagnetic wave, wherein the wavelength of the first electromagnetic wave differs from the wavelength of the second electromagnetic wave. [9] Optoelectronic component (100) according to any one of claims 1 to 8, further comprising a first transport layer (524) which is arranged between the first reflective surface (104a) and the first layer (106) and is configured such that, when the optoelectronic device (100) is irradiated by means of the electromagnetic wave, the charge carriers of the first type transported in the first layer (106) are transferred from the first layer (106) to the first transport layer (524), and the charge carriers of the first type transferred in the first transport layer (524) are transported in the first transport layer (524) to the first electrode (104); and a second transport layer (526) which is arranged between the second reflecting surface (112a) and the second layer (108) and is configured such that when the optoelectronic device (100) is irradiated by means of the electromagnetic wave, the charge carriers of the second type transported in the second layer (108) are transferred from the second layer (108) to the second transport layer (526), ​​and the charge carriers of the second type transferred in the second transport layer (526) are transported in the second transport layer (526) to the second electrode (112). [10] Optoelectronic component (100) according to any one of claims 1 to 9, further comprising an encapsulation (528) which is arranged over the second electrode (112) and at least partially encapsulates the optoelectronic component (100). [11] Optoelectronic device (100) according to any one of claims 1 to 10, configured as a photodiode. [12] Optoelectronic component structure comprising a plurality of optoelectronic components (100) according to any one of claims 1 to 11. [13] Method for manufacturing an optoelectronic device (100) comprising the method: Forming a first electrode (104) on a substrate (102) which has a first reflective surface (104a); Forming a second electrode (112) above the first electrode (104), wherein the second electrode (112) has a second reflecting surface (112a), wherein the second reflecting surface (112a) and the first reflecting surface (104a) are arranged such that they form an optical cavity; Forming a first layer (106) comprising a first material which is arranged between the first reflecting surface (104a) and the second reflecting surface (112a); Forming a second layer (108) comprising a second material which is arranged between the first layer (106) and the second reflective surface (112a), wherein the second material differs from the first material; Forming a third layer (110) comprising a third material which is arranged between the first layer (106) and the second layer (108), wherein the third material differs from the first material and from the second material; wherein the first material, the second material and the third material are arranged such that when the optoelectronic device (100) is irradiated by means of an electromagnetic wave, • Charge carriers of a first type and charge carriers of a second type are generated in the third layer (110) by absorption of the electromagnetic wave in the third material, • the charge carriers of the first type generated in the third layer (110) are transferred from the third layer (110) to the first layer (106), • the charge carriers of the second type generated in the third layer (110) are transferred from the third layer (110) to the second layer (108), • the transferred charge carriers of the first type in the first layer (106) are transported to the first electrode (104), and • the transferred charge carriers of the second type in the second layer (108) are transported to the second electrode (112). [14] Method according to claim 13, further comprising forming a first transport layer (524) which is arranged between the first reflective surface (104a) and the first layer (106); and forming a second transport layer (526) which is arranged between the second reflective surface (112a) and the second layer (108). [15] Method according to claim 13 or 14, further comprising forming an encapsulation (528) which is arranged over the second electrode (112) and at least partially encapsulates the optoelectronic component (100).