Method, apparatus and system for high-bandwidth on-mold antennas

Abstract

A semiconductor device (735; 736) comprising: a semiconductor layer (910) having a first surface (912) and a second surface (914); a polymer layer (920) having a first surface (922) and a second surface (924), wherein the first surface (922) of the polymer layer (920) is proximate the second surface (914) of the semiconductor layer (910); a mold (930) having a first surface (932) and a second surface (934), wherein the first surface (932) of the mold (930) is proximate the second surface (924) of the polymer layer (920); a plurality of nodes (942, 944, 946) disposed near the first surface (912) of the semiconductor layer (910); an antenna (950; 2250) disposed on the second surface (934) of the mold (930); a first conductive element (962; 2162) providing an electrical connection between at least a first node (944) and the antenna (950; 2250); a high-frequency filter (980) arranged in the mold (930); and a second conductive element (966) providing an electrical connection between at least a second node (946) and the high frequency filter (980).

Description

Background of the inventionField of the invention

[0001] The present invention relates generally to the fabrication of complex semiconductor devices, and more particularly to various methods and systems for providing a radio frequency (RF) antenna for a semiconductor device. Description of the state of the art

[0002] The technological explosion in the manufacturing industry has led to many new and innovative ways of manufacturing products. Millimeter wave (mm-wave) applications include devices that operate at high frequencies in the electromagnetic spectrum, ranging from about 30 gigahertz (GHz) to about 300 GHz. Some applications, such as those in 5G communications and the Internet of Things (IoT), can operate at frequencies below 30 GHz, such as 28 GHz. Millimeter waves have a wavelength ranging from about 1 millimeter (mm) to about 10 mm, corresponding to a radio frequency of 30 GHz to about 300 GHz. This frequency band is sometimes referred to as the extremely high frequency (EHF) frequency range.

[0003] The implementation of 5G and IoT applications presents many challenges in designing circuits for these applications. EHF applications require discontinuous, low-loss transmission paths. They also benefit from antennas that are tightly integrated with other components. However, the tight integration of the antenna with the other components typically results in narrow bandwidth for antennas. Typical on-die antennas have an efficiency of around 30% and a gain of about 3 dBi.

[0004] From the document US 2010 / 0 073 255 A1 an overmolded semiconductor package is known which comprises at least one semiconductor chip arranged over a package substrate, a molding compound lying over the at least one semiconductor chip and the package substrate, a conductive layer located on an outer surface of the molding compound, and an antenna feed line arranged in the molding compound and having a portion exposed in an opening in the conductive layer to provide an antenna input on the outer surface of the molding compound.

[0005] The present invention may address and / or at least reduce one or more of the above-mentioned problems. Summary of embodiments of the invention

[0006] The following is a simplified summary of the invention to provide a basic understanding of some aspects of the invention. This summary does not constitute a complete overview of the invention. It is not intended to identify essential or critical elements of the invention or to delimit the scope of the invention. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description discussed later.

[0007] In one embodiment, the present invention relates to a semiconductor device according to independent claim 1, advantageous embodiments thereof being defined in dependent claims 2 to 5.

[0008] In a further embodiment, the present invention relates to a device according to independent claim 6, advantageous embodiments thereof being defined in dependent claims 7 to 12.

[0009] In a further embodiment, the present invention relates to a method according to independent claim 13, advantageous embodiments thereof being defined in dependent claims 14 to 18.

[0010] While not bound by theory, the semiconductor devices of the present invention may exhibit bandwidths of about 15-30% at an operating frequency of about 28 GHz. Short description of the drawings

[0011] The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements and in which: Fig. 1 illustrates a stylized block diagram representation of a communication system according to embodiments herein; Fig. 2 illustrates a stylized block diagram representation of the control unit 140 according to embodiments herein; Fig. 3 a stylized block diagram representation of the communication front-end unit of Fig. 1 according to embodiments herein; Fig. 4 a stylized block diagram of the transmitting unit of Fig. 3 according to the embodiments herein; Fig. 5 a stylized block diagram of the receiver unit of Fig. 3 according to embodiments herein; Fig. 6 a stylized block diagram representation of the signal processing unit of Fig. 1 according to embodiments herein; Fig. 7 a stylized block diagram representation of the antenna unit of Fig. 1 according to embodiments herein; Fig. 8 illustrates a stylized, wide-view top view of a first device comprising a plurality of semiconductor devices, each having an antenna, according to an embodiment herein; Fig. 9 a stylized cross-sectional view of a Fig. 8 in X-section according to embodiments herein; Fig. 10 a stylized cross-sectional view of the semiconductor device of Fig. 8-9 after a first manufacturing step in X-section according to a first embodiment; Fig. 11 a stylized cross-sectional view of the semiconductor device of Fig. 8-10 after a second manufacturing step in X-section according to the first embodiment; Fig. 12 a stylized cross-sectional view of the semiconductor device of Fig. 8-11 after a third manufacturing step in X-section according to the first embodiment; Fig. 13 a stylized cross-sectional view of the semiconductor device of Fig. 8-12 after a fourth manufacturing step in X-section according to the first embodiment; Fig. 14 a stylized cross-sectional view of the semiconductor device of Fig. 8-13 after a fifth manufacturing step in X-section according to the first embodiment; Fig. 15 a stylized cross-sectional view of the semiconductor device of Fig. 8-14 after a sixth manufacturing step in X-section according to the first embodiment; Fig. 16 a stylized cross-sectional view of the semiconductor device of Fig. 8-15 after a seventh manufacturing step in X-section according to the first embodiment; Fig. 17 a stylized cross-sectional view of the semiconductor device of Fig. 8-16 after an eighth manufacturing step in X-section according to the first embodiment; Fig. 18 a stylized cross-sectional view of the semiconductor device of Fig. 8-17 after a ninth manufacturing step in X-section according to the first embodiment; Fig. 19 a stylized cross-sectional view of the semiconductor device of Fig. 8-18 illustrates a tenth manufacturing step in X-section according to the first embodiment; Fig. 20 a stylized cross-sectional view of the semiconductor device of Fig. 8-19 after an eleventh manufacturing step in X-section according to the first embodiment; Fig. 21 illustrates a stylized, wide-angle plan view of a second device having a plurality of semiconductor devices, each including an antenna, according to a second embodiment herein; Fig. 22 a stylized cross-sectional view of a Fig. 21 in X-section according to embodiments herein; Fig. 23 a stylized cross-sectional view of the semiconductor device of Fig. 21-22 after a first manufacturing step in X-section according to a second embodiment; Fig. 24 a stylized cross-sectional view of the semiconductor device of Fig. 21-23 after a second manufacturing step in X-section according to the second embodiment; Fig. 25 a stylized cross-sectional view of the semiconductor device of Fig. 21-24 after a third manufacturing step in X-section according to a second embodiment; Fig. 26 a stylized cross-sectional view of the semiconductor device of Fig. 21-25 after a fourth manufacturing step in X-section according to the second embodiment; Fig. 27 a stylized cross-sectional view of the semiconductor device of Fig. 21-26 after a fifth manufacturing step in X-section according to a second embodiment; Fig. 28 a stylized cross-sectional view of the semiconductor device of Fig. 21-27 after a sixth manufacturing step in X-section according to the second embodiment; Fig. 29 illustrates a flowchart depicting a method of manufacturing a semiconductor device according to embodiments herein; and Fig. 30 illustrates a stylized representation of a system for manufacturing a semiconductor device according to embodiments herein.

[0012] Specific embodiments are illustrated by way of example in the drawings and described in detail herein. Detailed description

[0013] Various illustrative embodiments of the invention are described below. For the sake of clarity, this specification does not describe all features of a specific implementation. It should, of course, be noted that when developing such a specific embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as adhering to system-related and business constraints that vary from implementation to implementation. Furthermore, it should be noted that such development work can be complex and time-consuming, but nevertheless represents a routine undertaking for those skilled in the art in light of this invention.

[0014] The present subject matter will now be described with reference to the accompanying figures. Various structures, systems, and devices are shown schematically in the drawings for illustrative purposes only so as not to obscure the present invention with details well known to those skilled in the art. Nevertheless, the accompanying drawings are included to describe and explain illustrative examples of the present invention. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of such words and phrases by those skilled in the art. No special definition of a term or phrase, that is, a definition that differs from its ordinary and customary meaning as understood by those skilled in the art, is to be implied by the consistent use of the term or phrase herein.To the extent that a term or phrase is intended to have a special meaning, i.e. a meaning different from that understood by a person skilled in the art, such special definition will be expressly set out in the specification in a definitional manner that directly and unambiguously provides the specific definition for the term or phrase.

[0015] Embodiments herein may be provided for both a radio frequency (RF) and an integrated mmWave antenna in a package with improved bandwidth.

[0016] For clarity, the embodiments contained herein are presented in the context of a communication device, but those skilled in the art will understand that the concepts disclosed herein may be implemented in other types of devices, such as high-speed communication devices, network devices, etc. With reference to Fig. 1 is a stylized block diagram representation of a communication system according to embodiments herein.

[0017] A system 100 may include a mmWave device 110, a database 170, and an engine controller 180. The mmWave device 110 may be a radar device, a wireless communication device, a data network device, a video device, or the like. For purposes of illustration and convenience and ease of description, the mmWave device 110 will be described in the context of a communication application. Therefore, the mmWave device 110 may often be referred to as a communication device 110 hereinafter. However, those skilled in the art will appreciate the advantages of the present invention if the concepts described herein could be applied to a variety of types of mmWave applications, including vehicle applications using radar signals, wireless network applications, data network applications, video and audio applications, etc.

[0018] The communication device 110 is capable of sending a communication signal and / or receiving a communication signal.

[0019] The communication device 110 may include a communication front-end unit 120, an antenna unit 130, a control unit 140, and a signal processing unit 150. The communication front-end unit 120 may include a variety of components, circuits, and / or modules and is capable of transmitting, receiving, and / or processing communication signals. In one embodiment, the communication device 110 may be incorporated into a single integrated circuit (IC) chip. In some embodiments, the communication device 110 may be formed on a plurality of integrated circuits positioned on a single IC chip. In other embodiments, the communication device 110 may be formed on a single integrated circuit embedded in an IC chip. In some cases, the communication front-end unit 120 may simply be referred to as the communication unit 120.

[0020] The communication front-end unit 120 is capable of providing a communication signal. In one embodiment, the frequency range of the communication signals processed by the communication device 110 may be in the range of approximately 10 GHz to approximately 90 GHz. The communication front-end unit 120 is capable of generating a communication signal in a predetermined frequency range. The device 110 may process network communication for various types of communication applications, such as packet data network communication, wireless (e.g., cellular, IEEE 802.11b WiGig technology, etc.), data communication, etc. The concepts disclosed herein in the context of communication applications may also be used for other types of applications, such as radar, wireless communication, high-definition video, etc.

[0021] With further reference to Fig. 1, the antenna unit 130 may also include a transmitting antenna and / or a receiving antenna. Furthermore, each of the transmitting and receiving antennas may include subsections to form an array of antennas. The transmitting antennas are used to transmit a communication signal, while the receiving antennas are used to receive a communication signal. A more detailed description of the antenna unit 130 is provided in Fig. and the corresponding description below.

[0022] With further reference to Fig. 1, the communication device 110 may also include a signal processing unit 150. The signal processing unit 150 is capable of performing various analog and / or digital processing of the signals transmitted and / or received by the communication device 110. For example, a communication signal transmitted by the communication device may be amplified before transmission. Furthermore, the signal received by the communication device 110 may be sent through one or more analog filter stages. The reflected signals may then be converted into a digital signal by one or more analog-to-digital converters (DACs) in the signal processing unit 150. Digital signal processing (DSP) may be performed on the digitized signal. A more detailed description of the signal processing unit 150 is provided in Fig. 6 and the corresponding description below.

[0023] With further reference to Fig. 1, the communication device 100 may also include a control unit 140. The control unit 140 may perform various control operations of the communication device 110. These functions include generating a communication signal, transmitting the communication signal, receiving a communication signal, and / or processing the reflected signal.

[0024] With reference to Fig. 2, a description will now be given using a stylized block diagram of the control unit 140 according to embodiments herein. The control unit 140 may include a processor unit 230 that can control various functions of the communication device 110. The processor unit 230 may include a microprocessor, a microcontroller, a field programmable gate array (FPGA), an application-specific integrated circuit (ASIC), and / or the like.

[0025] The control unit 140 may also include a logic unit 220. The logic unit 220 may include circuitry capable of performing various logic functions, receiving data, and interfacing with input data (Data_In) and output data (Data_Out). The Data_In signal may represent data resulting from the processing and analysis of the reflected signal. The Data_Out signal may represent data generated to perform one or more tasks as a result of the transmission of the communication signal and the received signal. For example, the Data_Out signal may be used to perform an action based on the transmission and / or reception of communication signals.

[0026] The control unit 140 may also include a memory unit 210. The memory unit 210 may include a non-volatile memory 214 and a RAM 212. The non-volatile memory 214 may include FLASH memory and / or programmable read-only devices (PROM devices). The memory unit 210 is capable of storing operating parameters for controlling the operations of the communication device 110. Furthermore, the memory unit 210 may store the status data and the response data described above. The memory unit 210 may also store data that can be used to program FPGA devices in the communication device 110. Thus, the memory unit 210 may be divided into a program data memory, a status data memory, etc. This division may be logical or physical.

[0027] With reference to Fig. Figure 3 illustrates a stylized block diagram representation of the communication front-end unit 120 according to embodiments herein. The communication front-end unit 120 may include a signal generation unit 310, a transmitter unit 320, a signal processing unit 340, and a receiver unit 330. The signal generation unit 310 is capable of generating a communication signal at a predetermined frequency. For example, a signal in the range of approximately 70 GHz to approximately 85 GHz may be generated. The signal generation unit 310 may include a true difference frequency doubler (differential FD). The FD may be formed in a push-push configuration. The signal generation unit 310 is capable of providing a communication signal for transmission. A more detailed description of the signal generation unit 310 is provided below.

[0028] With further reference to Fig. 3, a signal is provided for processing and transmission from the signal generation unit 310 to the transmission unit 320. The transmission unit 320 may include a variety of filters, signal conditioning circuits, buffers, amplifiers, etc. for processing the signal from the signal generation unit 310. The transmission unit 320 provides a communication signal to be transmitted to the antenna unit 130.

[0029] Fig. 4 illustrates a stylized block diagram of the transmitting unit 320 according to embodiments herein. With simultaneous reference to the Fig. 3 and Fig. 4, the transmitting unit 320 may include a plurality of similar transmitters, i.e., a first transmitter 410a, a second transmitter 420b, up to an Nth transmitter 410n (collectively, "410"). In one embodiment, the 1st through Nth transmitters 410 may each process a single signal from the signal generating unit 310 and provide an output transmit signal to one or more antennas. In another embodiment, the signal generating unit 310 may provide a plurality of signals to the 1st through Nth transmitters 410. For example, the signal generating unit 310 may provide a signal transmit signal for each transmitter 410, or alternatively, provide a first transmit signal for a first set of transmitters 410 and a second transmit signal for a second set of transmitters 410.

[0030] With further reference to Fig. 3, a received signal is fed to the receiver unit 330. The receiver unit 330 is capable of receiving the processed received signal from the signal processing unit 130. The receiver unit 330 is capable of performing analog-to-digital (A / D) conversion, signal buffering, DSP, etc. In some embodiments, the signal processing unit 130 may perform A / D conversions and DSP; however, in other embodiments, these tasks may be performed by the receiver unit 330. The receiver unit 330 may be directed to the control unit 140.

[0031] Fig. 5 illustrates a stylized block diagram of the receiver unit 320 according to embodiments herein. With simultaneous reference to the Fig. 3 and Fig. 5, the receiver unit 320 may comprise a plurality of similar receivers, in particular a first receiver 510a, a second receiver 520b up to an Nth receiver 510n (collectively "510"). In one embodiment, the 1st to Nth receivers 510 may each process a single signal from the signal generation unit 310 and provide the signal to the control unit 140. In another embodiment, they may provide a plurality of signals to the 1st to Nth receivers 510. For example, the signal processing unit 130 may provide a signal reception signal for each receiver 510, or alternatively, provide a first receiver signal for a first set of receivers 510 and a second receiver signal for a second set of receivers 510.

[0032] With reference to Fig. Figure 6 illustrates a stylized block diagram representation of signal processing unit 150 according to embodiments herein. Signal processing unit 150 may include an analog filter unit 610, an A / D converter 620, a DSP unit 630, and a memory 640. Analog filter unit 610 is capable of performing both filtering and amplifying the analog signal downconverted from a mmWave signal received by signal processing unit 150. Noise filtering may be performed by analog filter unit 610 before amplifying the analog signal downconverted from a mmWave signal.

[0033] The A / D converter 620 is capable of converting the filtered and / or amplified analog signal into a digital signal. The A / D converter 620 may be capable of performing conversions with a fixed or varying degree of accuracy. For example, the A / D converter 620 may have a precision of 12 bits, 24 bits, 36 bits, 48 ​​bits, 64 bits, 96 bits, 128 bits, 256 bits, 512 bits, 1024 bits, or higher. The converted digital mmWave signal is fed to the DSP device 630.

[0034] The DSP unit 630 can perform a variety of DSP operations on the digital mm-Wave signal. For example, digital filtering of the digitized analog signal that has been down-converted from the mm-Wave frequency can be performed by the DSP unit 630. As an example, signal components outside a predetermined frequency range, e.g., 70 GHz to about 85 GHz, can be filtered to a lower amplitude. In other cases, mathematical functions, such as a fast Fourier transform (FFT), can be applied to the mm-Wave signal. The processed digital output of the DSP unit 630 can be sent to the control unit 140 for analysis. In other cases, the digital output can be buffered or stored in a memory 640. In some cases, the memory 610 can be a first-in, first-out (FIFO) memory.In other cases, the processed digital output of the DSP unit 630 may be stored in the memory unit 210 of the control unit 140.

[0035] With reference to Fig. Figure 7 is a stylized block diagram representation of the antenna unit of Fig. 1 according to embodiments herein. mm-wave signals to be transmitted (e.g., radar signals, network data signals, wireless communication signals, etc.) can be transmitted by the transmitting unit 320 ( Fig. 3) for the transmit antenna 710. In one embodiment, the transmit antenna 710 may comprise a plurality of transmit antenna sections 715. The transmit antenna sections 715 are arranged in a predetermined pattern, e.g., an array matrix, as shown in Fig. 7 is shown.

[0036] Millimeter wave signals to be received (e.g., radar signals, network data signals, wireless communication signals, etc.) can be detected by the receiving antenna 720. The receiving antenna 720 provides the received mm wave signals to the receiver unit 330 ( Fig. 3). In one embodiment, the receiving antenna 720 may comprise a plurality of receiving antenna sections 725. The receiving antenna sections 725 are also arranged in a predetermined pattern, e.g., an array matrix, as shown in Fig. 7 is shown.

[0037] Fig. 8 illustrates a stylized wide-view top view of a first device 730 having a plurality of semiconductor devices 735 according to an embodiment herein, each comprising an antenna 950. Each of the semiconductor devices 735 may correspond to a transmit antenna section 715 or a receive antenna section 725 shown in the block diagram of Fig. 7. The first device 730 may correspond to a transmitting antenna 710, a receiving antenna 720, or a combination thereof, shown in the block diagram of Fig. 7 is shown.

[0038] The Fig. The plan view shown in Figure 8 shows an antenna 950 and a shape 930, which are described in more detail below. The shape of the antenna 950 in the plan view is not critical and can be different from that shown in Fig. 8. The top view is wide-angled to illustrate the position of a radio frequency (RF) filter 980 disposed within the mold 930, as described in more detail below.

[0039] The plurality of semiconductor devices 735 can be configured to receive radio frequency (RF) signals, such as communication signals, at a specific frequency. By using a specific frequency, the RF signal to be received also has a specific wavelength λ. Thus, in one embodiment, the semiconductor devices 735 can be arranged in the first device 730 such that the antennas 950 of adjacent semiconductor devices 735 are separated by half the respective wavelength λ / 2. Although not bound by theory, this separation can improve the efficiency, sensitivity, and / or signal-to-noise ratio of the signal acquisition or propagation by the first device 730.

[0040] Fig. Figure 8 also shows an X-section line used to illustrate subsequent drawings of a semiconductor device 735 of the first device 730. The X-section line bisects the mold 930, the antenna 950, and the RF filter 980.

[0041] With reference to Fig. 9 shows a stylized cross-sectional view of a Fig. 8 in an X-section according to embodiments herein. The semiconductor device 735 includes a semiconductor layer 910 having a first surface 912 and a second surface 914. The semiconductor layer 910 may include any semiconducting material, such as silicon or silicon-germanium. If the semiconductor layer 910 includes silicon-germanium, the germanium content in mol% may be appropriately selected by one skilled in the art.

[0042] The semiconductor device 735 also includes a polymer layer 920 having a first surface 922 and a second surface 924. The first surface 922 of the polymer layer 920 is proximate the second surface 914 of the semiconductor layer 910. The polymer layer 920 may comprise any polymer material known in the art. In one embodiment, the polymer layer 920 comprises polyimide.

[0043] The semiconductor device 735 further includes the aforementioned mold 930. The mold 930 has a first surface 932 and a second surface 934. The first surface 932 of the mold 930 is proximate to the second surface 924 of the polymer layer 920. The mold 930 may comprise any molding material known in the art. In one embodiment, the mold 930 comprises Ajinomoto MI-11 (Ajinomoto Co., Inc., Tokyo, Japan).

[0044] The thickness of the mold 930 can be varied by one skilled in the art. In one embodiment, the mold 930 has a thickness of about 500 µm to about 1000 µm. In another embodiment, the mold 930 has a thickness of about 750 µm to about 800 µm, such as about 775 µm.

[0045] The semiconductor device 735 additionally includes a plurality of nodes 942, 944, 946 arranged near the first surface 912 of the semiconductor layer 910. Each node 942, 944, or 946 includes, among other things, an electrically conductive material, such as a metal, e.g., copper or aluminum, or a eutectic solder joint.

[0046] Although in Fig. 9 three nodes 942, 944, 946 are shown, the number of nodes can vary.

[0047] The semiconductor device 735 also includes the antenna 950, which is arranged on the second surface 934 of the mold 930. The antenna 950 comprises, among other things, an electrically conductive material, such as a metal, e.g., copper or aluminum.

[0048] The semiconductor device 735 includes a first conductive element 962 for establishing an electrical connection between at least a first node 944 and the antenna 950. An RF signal received by the antenna 950 may be provided to other components of a system including a semiconductor device 735 via the first node 944, or an RF signal generated by other components of a system, including the semiconductor device 735, and transmitted by the antenna 950 may be provided to the antenna 950 via the first node 944. Although the first conductive element 962 has a uniform width across its entire height for clarity, it may include wider and narrower sections, sections made of different materials, etc., as described below and as will be apparent to those skilled in the art.

[0049] The semiconductor device 735 also includes a ground element 970 disposed within the polymer layer 920 or on the second surface of the polymer layer. The ground element 970 may comprise any electrically conductive material, such as a metal such as copper or aluminum. A second conductive element 964 provides an electrical connection between at least a second node 942 and the ground element 970. While not bound by theory, the ground element 970 may reduce interference caused by RF signals received by the antenna 950 and provided to other components of a system including the semiconductor device 735, or transmitted by the antenna 950 and generated by other components of the system via the first node 944.

[0050] In embodiments such as in Fig. 9, the semiconductor device 735 may further include a radio frequency (RF) filter 980 disposed within the mold 930. Alternatively (not shown), the RF filter 980 may be disposed on the second surface 924 of the polymer layer 920. Integrating the RF filter 980 into a die-to-wafer (D2W) process may improve the performance of a device including the semiconductor device 735. As shown, the semiconductor device 735 may further include a third conductive element 966 providing an electrical connection between at least a third node 946 and the RF filter 980. Although Fig. 9 shows only one conductive element between a node and the RF filter 980 for convenience and brevity, i.e., the third conductive element 966 providing electrical connection between at least a third node 946 and the RF filter 980, in other embodiments the semiconductor device 735 may comprise two, three, four or a different number of nodes and a corresponding number of conductive elements from the nodes to the RF filter 980.

[0051] The semiconductor device 735 may also include various layers known to those skilled in the art for use in semiconductor devices. For example, the semiconductor device 735 may include a second polymer layer 925 disposed proximate the plurality of nodes 942, 944, and 946. The second polymer layer 925 may comprise a material suitable for use as a substrate for a printed circuit board. The second polymer layer 925 may, but need not, comprise the same material as the polymer layer 920.

[0052] As another example, semiconductor device 735 may include an oxide layer 990 disposed between semiconductor layer 910 and polymer layer 920. Oxide layer 990 may comprise silicon oxide and may be formed using any known technique. Alternatively or additionally, semiconductor device 735 may include a second oxide layer 995 disposed between second polymer layer 925 and semiconductor layer 910.

[0053] For the sake of a concise presentation, Fig. 9 one or more structures may be omitted which a person skilled in the art would routinely include in a semiconductor device.

[0054] Fig. 10 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a first manufacturing step according to a first embodiment. In the first manufacturing stage, the semiconductor layer 910 is formed, to which the second oxide layer 995 near the first surface 912 of the semiconductor layer 910, the second polymer layer 925 near the second oxide layer 995, and a sacrificial support layer 1026 near the second polymer layer 925 may be bonded using known techniques.

[0055] Fig. 11 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a second manufacturing step according to the first embodiment. In the second stage of manufacturing, trenches 1111 are etched from the second surface 914 to the second surface 912 of the semiconductor layer 910, thereby exposing the second oxide layer 995. The oxide layer 990 is then deposited near the second surface 914 of the semiconductor layer 910 and conformally coats the trenches 1111. Etching the trenches 1111 and depositing the oxide layer 990 may be performed using known techniques as a routine matter by one of ordinary skill in the art.

[0056] Fig. 12 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a third manufacturing step according to the first embodiment. A first polymer sublayer 921 is deposited over the oxide layer 990 and also the trenches 1111. It is desirable that the first polymer sublayer 921 be etched at the bottom of the trenches 1111 to open the die metal where a first conductive layer 961 (see Fig. ). The deposition of the first polymer sublayer 921 is a routine matter for those skilled in the art and need not be described in detail.

[0057] Fig. 13 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a fourth manufacturing step according to the first embodiment. In the fourth stage of manufacturing, a first conductive sublayer 961 is deposited on the first polymer sublayer 921. A diffusion barrier layer (not shown) may be disposed prior to plating the first conductive sublayer 961. Prior to plating the first conductive sublayer 961, a mask (not shown) may be deposited on portions of the first polymer sublayer 921 overlying the semiconductor layer 910, after which plating may be performed. Any commercially available sputtering technique may be used to deposit a thin seed layer for depositing the first conductive sublayer 961 on the first polymer sublayer 921. The mask may then be removed to Fig. 13 to obtain semiconductor device 735.

[0058] Fig. 14 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a fifth manufacturing step according to the first embodiment. In this manufacturing step, a second polymer sublayer 923 is applied to the first conductive sublayer 961. In positions where the plating of the first conductive sublayer 961 was prevented by masking, e.g., at position 1427, the second polymer sublayer 923 may contact the first polymer sublayer 921, thereby ensuring galvanic isolation of the portions of the first conductive sublayer 961 from one another. The ground element 970 may be defined by such galvanic isolation of portions of the first conductive sublayer 961.

[0059] The deposition of the second polymer sublayer 923 can be performed using known techniques. Furthermore, prior to the deposition of the second polymer sublayer 923, a mask (not shown) can be applied to portions of the first conductive sublayer 961, after which the deposition can be performed and the mask removed to expose the Fig. 14 to obtain semiconductor device 735.

[0060] Fig. 15 illustrates a stylized X-sectional view of the semiconductor device 735 after a sixth manufacturing step according to the first embodiment. In this manufacturing step, a second conductive sublayer 963 is deposited on the second polymer sublayer 923. In positions where the deposition of the second polymer sublayer 923 was prevented by masking, e.g., at position 1567, the second conductive sublayer 963 may contact the first conductive sublayer 961.

[0061] Fig. 16 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a seventh manufacturing step according to the first embodiment. In this manufacturing step, a via stripe 965 and the RF filter 980 may be formed, each in contact with the second conductive sublayer 963 and in electrical connection with portions of the first conductive sublayer 961. The formation of the via stripe 965 and the RF filter 980 may be performed using known techniques and need not be further described.

[0062] Fig. 17 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after an eighth manufacturing step according to the first embodiment. In this manufacturing step, the mold 930 is formed over the via stripe 965 and the RF filter 980. The techniques for forming the mold 930 are known to those skilled in the art and need not be described in detail.

[0063] Fig. 18 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after a ninth manufacturing step according to the first embodiment. In this manufacturing step, a via opening 1867 is formed in the mold 930. In one embodiment, the via opening 1867 may be formed by performing a laser opening technique on the mold 930. By forming the via opening 1867, the via stripe 965 is exposed to the subsequent processing steps.

[0064] Fig. 19 illustrates a stylized X-sectional view of the semiconductor device 735 after a tenth manufacturing step according to the first embodiment. In the tenth manufacturing step, the antenna 950 is formed by depositing a conductive material on the mold 930, including overfilling and filling the Fig. 18. A diffusion barrier layer may be desired for the deposition of the antenna 950. Any conventional sputtering process can be used to apply a thin seed layer for the antenna 950 to the mold 930. The antenna 950 is accordingly in electrical contact with the via stripe 965, at least a portion of the second conductive sublayer 963, and at least a portion of the first conductive sublayer 961. The via stripe 965, the at least a portion of the second conductive sublayer 963, and the at least a portion of the first conductive sublayer 961 together define the first conductive element 962.

[0065] Fig. 20 illustrates a stylized X-section cross-sectional view of the semiconductor device 735 after an eleventh manufacturing step according to the first embodiment. In this manufacturing step, the sacrificial layer 1026 is removed and a formation of front-side C4 or CuP bumps is performed to obtain a plurality of nodes 942, 944, and 946 arranged on the second polymer layer 925.

[0066] Although not bound by theory, a semiconductor device 735 may have a bandwidth of about 4.4 GHz and a gain of about 8 dBi for a 28 GHz signal.

[0067] Fig. 21 descriptively illustrates a stylized, wide-angle top view of a second device 731 including a plurality of semiconductor devices 736, each having an antenna 2250, according to a second embodiment herein. Fig. 21 has Fig. 8 many elements in common. These common elements are identified by the same reference numbers that first appear in Fig. 8, as described therein. In general, the second device 731 is essentially the device shown in Fig. 9. The second device 731 comprises a plurality of semiconductor devices 736 that correspond to the Fig. 9 are similar to semiconductor devices 735 shown.

[0068] In Fig. 21 shows a new antenna 2250, which is similar to the Fig. 9 is substantially similar to the antenna 950 shown.

[0069] Fig. 21 also shows a ring 2277. Clearly visible, the ring 2277 surrounds the antenna 2250, but is separated from the antenna 2250 by a portion of the mold 930. The inclusion of the ring 2277 can reduce signal discontinuity and / or signal loss in each semiconductor device 736.

[0070] Fig. 21 also shows an X-section line from which the cross-sectional views in the Fig. 22-28 are taken over.

[0071] Fig. 22 clearly shows a stylized cross-sectional view of a Fig. 21 in X-section according to the second embodiment. Many of the Fig. 22 are identical or substantially similar to those in Fig. 10 and are designated by the same reference numbers.

[0072] There are a number of differences between Fig. 22 and Fig. 10. First, a first conductive element 2162 is arranged in the polymer layer 920 below the antenna 2250. The first conductive element 2162 is a supply layer that establishes an electrical connection between the antenna 2250 and the first node 944 or, in another embodiment, the chip 910. The electrical connection provided by the first conductive element 2162 does not require a physical connection; rather, the slot in the ground element 2270 resonates the antenna by coupling electromagnetic fields.

[0073] In this embodiment, the ground element 2270 of the semiconductor device 736 is disposed on the second surface 924 of the polymer layer 920 and has a slot below the antenna 2250 and above the first conductive element 2162. The slot in the ground element 2270 allows the first conductive element 2162 to feed the antenna 2250.

[0074] Fig. Figure 22 also shows that the via cage 2275 extends from the ground element 2270 to the second surface 934 of the mold 930 and provides an electrical connection to the ring 2277. The via cage 2275 and the ring 2277 may collectively be referred to herein as a "ground shield."

[0075] Fig. Figure 23 illustrates a stylized cross-sectional view of the semiconductor device 736 after a first manufacturing step in X-section according to the second embodiment. The first manufacturing stage mentioned herein is not the first manufacturing stage of the device. Instead, the first stage of manufacturing of the second embodiment is performed at the location shown in Fig. 14. In the first stage of fabrication of the second embodiment, a second conductive sublayer 2363 is deposited on the second polymer sublayer 923 to form the ground element 2270 and a portion of the second conductive sublayer 2363 that will not be part of the ground path for the semiconductor device 736. The ground element 2270 is in contact with the first conductive sublayer 961. Another portion of the first conductive sublayer 961 forms the first conductive element 2162, as shown in Fig. 22 is shown.

[0076] Fig. 24 illustrates a stylized cross-sectional view of the semiconductor device 736 after a second X-section manufacturing step according to the second embodiment. In this manufacturing phase, the RF filter 980 is formed as described above.

[0077] Fig. 25 illustrates a stylized cross-sectional view of the semiconductor device 736 after a third manufacturing step in X-section according to a second embodiment. In this manufacturing step, the mold 930 is formed as described above.

[0078] Fig. 26 illustrates a stylized cross-sectional view of the semiconductor device 736 after a fourth manufacturing step in an X-section according to the second embodiment. In this manufacturing step, via openings 2667 are formed in the mold 930. In one embodiment, the via opening 2667 may be formed by performing a laser opening technique on the mold 930. The formation of the via openings 2667 exposes the ground element 2270 and the second ground element 2270 to the subsequent processing steps.

[0079] Fig. Figure 27 illustrates a stylized cross-sectional view of the semiconductor device 736 after a fifth manufacturing step in X-section according to a second embodiment. In this manufacturing step, the antenna 2250 is plated, as described above with respect to the antenna 950. Also at this time, the via cage 2275 is inserted into the Fig. 26, followed by plating the ring 2277. The ring 2277 may be formed of aluminum. The ring 2277 may improve the directivity of the semiconductor device 736.

[0080] Fig. 28 illustrates a stylized X-section cross-sectional view of the semiconductor device 736 after a sixth manufacturing step according to the second embodiment. In the sixth manufacturing step, the nodes 942, 944, and 946 are formed as described above.

[0081] Although not bound by theory, a semiconductor device 736 may have a bandwidth of about 8.1 GHz and a gain of about 7.5 dBi for a 28 GHz signal.

[0082] Fig. Figure 29 illustrates a flowchart illustrating a method 2900 for fabricating a semiconductor device according to embodiments herein. Specifically, the method 2900 includes forming (at 2910) a semiconductor layer having a first surface and a second surface. In one embodiment, the semiconductor layer (at 2910) may be formed from silicon germanium.

[0083] In some embodiments, method 2900 may further include forming (at 2915) an oxide layer adjacent to the second surface of the semiconductor layer.

[0084] The method 2900 also includes forming (at 2920) a polymer layer having a first surface and a second surface, wherein the first surface of the polymer layer is proximate to the second surface of the semiconductor layer. In embodiments where forming (at 2915) an oxide layer is performed, the oxide layer is disposed between the semiconductor layer and the polymer layer.

[0085] The method 2900 further includes forming (at 2930) a mold having a first surface and a second surface, wherein the first surface of the mold is proximate the second surface of the polymer layer. In one embodiment, the mold may be formed (at 2930) to have a thickness of 500 µm to 1000 µm. In another embodiment, the mold may be formed (at 2930) to have a thickness of 750 µm to 800 µm. In a particular embodiment, the mold may be formed (at 2930) to achieve a thickness of 775 µm.

[0086] Method 2900 additionally includes forming (at 2940) a plurality of nodes disposed proximate to the first surface of the semiconductor layer. Method 2900 further includes forming (at 2950) an antenna disposed on the second surface of the mold. Method 2900 additionally includes forming (at 2960) a first conductive element that provides an electrical connection between at least one first node and the antenna.

[0087] The method 2900 also includes forming (at 2970) a ground element disposed within the polymer layer or on the second surface of the polymer layer. The method 2900 further includes forming (at 2980) a second conductive element that provides an electrical connection between at least one second node and the ground element.

[0088] In one embodiment, the method 2900 may include, in forming (at 2970) the ground element of the semiconductor device, forming the ground element on the second surface of the polymer layer, wherein the method 2900 may additionally include forming (at 2972) a ground shield extending from the ground element to the second surface of the mold and surrounding the antenna.

[0089] In addition to forming (at 2972) the ground shield, the method 2900 further includes forming (at 2982) a radio frequency (RF) filter disposed within the mold and forming (at 2984) a third conductive element providing an electrical connection between at least a third node and the RF filter.

[0090] Alternatively or in addition to forming (at 2972) the ground shield and / or forming (at 2982) the RF filter, the method 2900 may additionally comprise forming (at 2985) a plurality of semiconductor devices and configuring (at 2987) a first subset of the plurality of semiconductor devices as a receiver antenna array and / or configuring a second subset of the plurality of semiconductor devices as a transmit antenna array. In this embodiment, the method may further comprise determining (at 2989) a first wavelength of an RF signal for the semiconductor device to receive and / or transmit and positioning (at 2991) the plurality of semiconductor devices such that a distance between the antennas of the proximal semiconductor devices is approximately half the first wavelength.

[0091] Fig. Figure 30 illustrates a stylized representation of a system for manufacturing a semiconductor device according to embodiments herein. The system 3000 provides for formation of an integrated circuit having the features described above with respect to one or more of the Fig. 8-28 and may be a product with the features described above in relation to one or more of the Fig. 1-28 form.

[0092] The System 3000 from Fig. 30 may include a semiconductor device processing system 3010 and an integrated circuit design unit 3040. The semiconductor device processing system 3010 may manufacture integrated circuit devices based on one or more designs provided by the integrated circuit design unit 3040.

[0093] The semiconductor device processing system 3010 may include various processing stations, such as deposition stations (e.g., ALD, PECVD, etc.), etching process stations, photolithography process stations, CMP process stations, etc. At least one of the processing steps performed by the processing system 3010 may be controlled by the processing controller 3020. The processing controller 3020 may be a workstation computer, a desktop computer, a laptop computer, a tablet computer, or another type of computing device, including one or more software products capable of controlling processes, receiving process feedback, receiving test result data, performing learning cycle adjustments, performing process adjustments, etc.

[0094] The semiconductor device processing system 3010 may fabricate integrated circuits on a medium, such as a silicon wafer. In particular, the semiconductor device processing system 3010 may fabricate integrated circuits including one or more semiconductor devices 735 and / or 736.

[0095] The fabrication of integrated circuits by device processing system 3010 may be based on the circuit designs provided by integrated circuit design unit 3040. Processing system 3010 may deliver processed integrated circuits / devices 3015 onto a transport mechanism 3050, such as a conveyor system. In some embodiments, the transport system may be a sophisticated cleanroom transport system capable of transporting semiconductor wafers. In one embodiment, semiconductor device processing system 3010 may include a plurality of processing steps to perform material deposition, including intrinsic stress, into gate cut regions.

[0096] In some embodiments, the elements labeled "3015" may represent individual wafers, and in other embodiments, the elements 3015 may represent a group of semiconductor wafers, e.g., a "lot" of semiconductor wafers. The integrated circuit or device 3015 may be a transistor, a capacitor, a resistor, a memory cell, a processor, and / or the like.

[0097] The integrated circuit design unit 3040 of the system 3000 is capable of providing a circuit design that can be used by the semiconductor processing system 3010 to manufacture the devices described herein.

[0098] The system 3000 may be capable of analyzing and manufacturing various products using different technologies. For example, the system 3000 may design and produce design and production data for manufacturing devices using CMOS technology, Flash technology, BiCMOS technology, and / or various other semiconductor technologies.

[0099] The methods described above may be governed by instructions stored on a non-transitory, computer-readable storage medium and executed, for example, by a processor in a computing device. Any of the operations described herein may correspond to instructions stored in non-transitory computer memory or computer-readable storage medium. In various embodiments, the non-transitory, computer-readable storage medium includes a magnetic or optical disk storage device, solid-state storage devices such as flash memory, or other non-transitory storage devices. The computer-readable instructions stored on the non-transitory, computer-readable storage medium may be in source code, assembly language code, object code, or another instruction format interpretable and / or executable by one or more processors.

Claims

[1] A semiconductor device (735; 736) comprising: a semiconductor layer (910) having a first surface (912) and a second surface (914); a polymer layer (920) having a first surface (922) and a second surface (924), wherein the first surface (922) of the polymer layer (920) is proximate the second surface (914) of the semiconductor layer (910); a mold (930) having a first surface (932) and a second surface (934), wherein the first surface (932) of the mold (930) is proximate the second surface (924) of the polymer layer (920); a plurality of nodes (942, 944, 946) disposed near the first surface (912) of the semiconductor layer (910); an antenna (950; 2250) disposed on the second surface (934) of the mold (930); a first conductive element (962; 2162) providing an electrical connection between at least a first node (944) and the antenna (950; 2250); a high-frequency filter (980) arranged in the mold (930); and a second conductive element (966) providing an electrical connection between at least a second node (946) and the high frequency filter (980). [2] The semiconductor device (735; 736) of claim 1, wherein the mold (930) has a thickness in the range of about 500 µm to about 1000 µm. [3] The semiconductor device (735; 736) according to claim 1, further comprising: a mass element (970; 2270) arranged in the polymer layer (920) or on the second surface (924) of the polymer layer (920); and a third conductive element (964; 968) providing an electrical connection between at least a third node (942) and the ground element (970; 2270). [4] The semiconductor device (736) of claim 3, wherein the ground element (2270) is disposed on the second surface (924) of the polymer layer (920), and the semiconductor device (736) comprises a ground shield (2275, 2277) extending from the ground element (2270) to the second surface (934) of the mold (930) and surrounding the antenna (2250). [5] The semiconductor device (735, 736) of claim 1, wherein the semiconductor layer (910) comprises silicon or silicon germanium. [6] Device (730; 731) comprising: a plurality of semiconductor devices (735; 736), each semiconductor device (735; 736) comprising: a semiconductor layer (910) having a first surface (912) and a second surface (914); a polymer layer (920) having a first surface (922) and a second surface (924), wherein the first surface (922) of the polymer layer (920) is proximate the second surface (914) of the semiconductor layer (910); and a mold (930) comprising a first surface (932) and a second surface (934), wherein the first surface (932) of the mold (930) is proximate the second surface (924) of the polymer layer (920); a plurality of nodes (942, 944, 946) disposed near the first surface (912) of the semiconductor layer (910). an antenna (950; 2250) disposed on the second surface (934) of the mold (930); and a first conductive element (962; 2162) providing an electrical connection between at least one first node (944) and the antenna (950; 2250), wherein a first subset of the semiconductor devices (735; 736) is configured as a receiver antenna array and a second subset of the semiconductor devices (735; 736) is configured as a transmit antenna array. [7] The device (730; 731) of claim 6, wherein the mold (930) of each semiconductor device (735; 736) has a thickness in the range of about 500 µm to about 1000 µm. [8] The device (730; 731) of claim 6, wherein each semiconductor device (735; 736) further comprises: a mass element (970; 2270) arranged in the polymer layer (920) or on the second surface (924) of the polymer layer (920); and a second conductive element (964; 968) providing an electrical connection between at least one second node (942) and the ground element (970; 2270). [9] The device (730; 731) of claim 6, wherein each semiconductor device (735; 736) further comprises: a high-frequency filter (980) arranged in the mold (930); and a third conductive element (966) providing an electrical connection between at least a third node (946) and the high frequency filter (980). [10] The device (731) of claim 8, wherein the ground element (2270) of each semiconductor device (736) is disposed on the second surface (924) of the polymer layer (920), and the semiconductor device (736) further comprises a ground shield (2275, 2277) extending from the ground element (2270) to the second surface (934) of the mold (930) and surrounding the antenna (2250). [11] The device (730; 731) of claim 6, wherein the semiconductor layer (910) of each semiconductor device (735; 736) comprises silicon or silicon germanium. [12] The device (730; 731) of claim 6, wherein the device (730; 731) is configured to transmit and / or receive a radio frequency signal having a first wavelength, and the semiconductor devices (735; 736) are positioned such that a distance between the antennas (950; 2250) of nearby semiconductor devices (735; 736) is approximately half of the first wavelength. [13] Method (2900) comprising: forming (2910) a semiconductor layer (910) having a first surface (912) and a second surface (914); forming (2920) a polymer layer (920) having a first surface (922) and a second surface (924), wherein the first surface (922) of the polymer layer (920) is proximate the second surface (914) of the semiconductor layer (910); forming (2930) a mold (930) having a first surface (932) and a second surface (934), wherein the first surface (932) of the mold (930) is proximate the second surface (924) of the polymer layer (920); forming (2940) a plurality of nodes (942, 944, 946) disposed near the first surface (912) of the semiconductor layer (910). forming (2950) an antenna (950; 2250) disposed on the second surface (934) of the mold (930); forming (2960) a first conductive element (962; 2162) that provides an electrical connection between at least a first node (944) and the antenna (950; 2250); forming (2982) a high-frequency filter (980) disposed in the mold (930); and forming (2984) a second conductive element (966) that provides an electrical connection between at least one second node (946) and the high frequency filter (980). [14] The method (2900) of claim 13, wherein forming (2930) the mold (930) comprises forming the mold (930) with a thickness in the range of 500 µm to 1000 µm. [15] The method (2900) of claim 13, further comprising: forming (2970) a mass element (970; 2270) arranged in the polymer layer (920) or on the second surface (924) of the polymer layer (920); and forming (2980) a third conductive element (964; 968) that provides an electrical connection between at least one third node (942) and the ground element (970; 2270). [16] The method (2900) of claim 15, wherein forming (2970) the mass element (2270) comprises forming the mass element (2270) on the second surface (924) of the polymer layer (920), and the method (2900) further comprises forming (2072) a ground shield (2275, 2277) extending from the mass element (2270) to the second surface (934) of the mold (930) and surrounding the antenna (2250). [17] The method (2900) of claim 13, wherein forming (2910) the semiconductor layer (910) comprises forming the semiconductor layer (910) from silicon germanium. [18] The method (2900) of claim 13, further comprising: forming (2985) a plurality of semiconductor devices (735; 736) each comprising the semiconductor layer (910), the polymer layer (920), the mold (930), the plurality of nodes (942, 944, 946), the antenna (950; 2250), and the first conductive element (962; 2162); and configuring (2987) a first subset of the plurality of semiconductor devices (935; 936) as a receiver antenna arrangement and / or configuring a second subset of the plurality of semiconductor devices (935; 936) as a transmit antenna arrangement.

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